JPS61106024U - - Google Patents

Info

Publication number
JPS61106024U
JPS61106024U JP19146484U JP19146484U JPS61106024U JP S61106024 U JPS61106024 U JP S61106024U JP 19146484 U JP19146484 U JP 19146484U JP 19146484 U JP19146484 U JP 19146484U JP S61106024 U JPS61106024 U JP S61106024U
Authority
JP
Japan
Prior art keywords
vacuum chamber
leak gas
manufacturing apparatus
semiconductor manufacturing
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19146484U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19146484U priority Critical patent/JPS61106024U/ja
Publication of JPS61106024U publication Critical patent/JPS61106024U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案による半導体製造装置の一実施
例を示す構成図、第２図は、従来の半導体製造装
置の構成図である。 １…副真空室、５…ゲートバルブ、６…真空室
、７…真空装置、８…リークガス供給管、９…質
量流量制御装置、１０…リークガス源。 FIG. 1 is a block diagram showing an embodiment of a semiconductor manufacturing apparatus according to the present invention, and FIG. 2 is a block diagram of a conventional semiconductor manufacturing apparatus. DESCRIPTION OF SYMBOLS 1... Sub-vacuum chamber, 5... Gate valve, 6... Vacuum chamber, 7... Vacuum device, 8... Leak gas supply pipe, 9... Mass flow control device, 10... Leak gas source.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 真空室に真空間ゲートを介して具設された大気
開放が必要な副真空室とリークガス源とを連結す
るリークガス供給管に質量流量制御装置を設けた
ことを特徴とする半導体製造装置。 A semiconductor manufacturing apparatus characterized in that a mass flow rate control device is provided in a leak gas supply pipe that connects a leak gas source to a sub-vacuum chamber that is provided in the vacuum chamber via a vacuum space gate and that needs to be opened to the atmosphere.
JP19146484U 1984-12-19 1984-12-19 Pending JPS61106024U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19146484U JPS61106024U (en) 1984-12-19 1984-12-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19146484U JPS61106024U (en) 1984-12-19 1984-12-19

Publications (1)

Publication Number Publication Date
JPS61106024U true JPS61106024U (en) 1986-07-05

Family

ID=30748903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19146484U Pending JPS61106024U (en) 1984-12-19 1984-12-19

Country Status (1)

Country Link
JP (1) JPS61106024U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111936A (en) * 1986-10-28 1988-05-17 Ulvac Corp Vacuum treating equipment
JPS63111937A (en) * 1986-10-28 1988-05-17 Ulvac Corp Vacuum treating equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4417881Y1 (en) * 1965-12-08 1969-08-02
JPS58156593A (en) * 1982-03-10 1983-09-17 Nippon Telegr & Teleph Corp <Ntt> Apparatus for vapor-phase epitaxial growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4417881Y1 (en) * 1965-12-08 1969-08-02
JPS58156593A (en) * 1982-03-10 1983-09-17 Nippon Telegr & Teleph Corp <Ntt> Apparatus for vapor-phase epitaxial growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111936A (en) * 1986-10-28 1988-05-17 Ulvac Corp Vacuum treating equipment
JPS63111937A (en) * 1986-10-28 1988-05-17 Ulvac Corp Vacuum treating equipment

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