JPS6198868U - - Google Patents
Info
- Publication number
- JPS6198868U JPS6198868U JP18360284U JP18360284U JPS6198868U JP S6198868 U JPS6198868 U JP S6198868U JP 18360284 U JP18360284 U JP 18360284U JP 18360284 U JP18360284 U JP 18360284U JP S6198868 U JPS6198868 U JP S6198868U
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- semiconductor manufacturing
- vacuum
- evacuate
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は、本考案による半導体製造装置の構成
の概略図である。
１……真空容器、２……可変コンダクタンスバ
ルブ、３……真空ポンプ、４……操作盤、５……
制御装置、６，７……信号線。
FIG. 1 is a schematic diagram of the configuration of a semiconductor manufacturing apparatus according to the present invention. 1... Vacuum container, 2... Variable conductance valve, 3... Vacuum pump, 4... Operation panel, 5...
Control device, 6, 7...signal line.
Claims (1)
容器と、真空容器に導入するガスの流量制御をす
る装置と、排気装置を有する半導体製造装置にお
いて、前記真空容器内を大気から真空に排気する
に際し、可変コンダクタンスバルブを自動的に全
閉にし徐々に開放するように構成したことを特徴
とする半導体製造装置。 In semiconductor manufacturing equipment that includes a vacuum chamber for generating plasma and processing wafers, a device for controlling the flow rate of gas introduced into the vacuum chamber, and an exhaust device, a variable conductance is used to evacuate the inside of the vacuum chamber from the atmosphere to a vacuum. A semiconductor manufacturing device characterized in that a valve is configured to automatically fully close and gradually open.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18360284U JPS6198868U (en) | 1984-12-05 | 1984-12-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18360284U JPS6198868U (en) | 1984-12-05 | 1984-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6198868U true JPS6198868U (en) | 1986-06-24 |
Family
ID=30741098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18360284U Pending JPS6198868U (en) | 1984-12-05 | 1984-12-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6198868U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57174465A (en) * | 1981-04-20 | 1982-10-27 | Kokusai Electric Co Ltd | High frequency ion etching device |
-
1984
- 1984-12-05 JP JP18360284U patent/JPS6198868U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57174465A (en) * | 1981-04-20 | 1982-10-27 | Kokusai Electric Co Ltd | High frequency ion etching device |
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