JPS5958938U - Low pressure processing equipment - Google Patents
Low pressure processing equipmentInfo
- Publication number
- JPS5958938U JPS5958938U JP15406482U JP15406482U JPS5958938U JP S5958938 U JPS5958938 U JP S5958938U JP 15406482 U JP15406482 U JP 15406482U JP 15406482 U JP15406482 U JP 15406482U JP S5958938 U JPS5958938 U JP S5958938U
- Authority
- JP
- Japan
- Prior art keywords
- main exhaust
- exhaust port
- chamber
- flow rate
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来装置の概略構成図、第2図は本考案による
低圧処理装置の概略構成図である。
1・・・処理室、2・・・予備室、3a、 3b・・
・ゲートバルブ、4a、 4b・・・ポンプ、5・・
・半導体基板支持台、6・・・リーク弁、7a、 ’7
b・・・半導体基板、8・・・主排気口、9・・・主排
気管、10・・・副排気口、11・・・副排気管、12
・・・主排気口開閉バルブ、13・・・流量制御装置、
14・・・ガス導入口、15・・・導入管。FIG. 1 is a schematic diagram of a conventional apparatus, and FIG. 2 is a schematic diagram of a low-pressure processing apparatus according to the present invention. 1...Processing room, 2...Preliminary room, 3a, 3b...
・Gate valve, 4a, 4b...Pump, 5...
・Semiconductor substrate support stand, 6... Leak valve, 7a, '7
b...Semiconductor substrate, 8...Main exhaust port, 9...Main exhaust pipe, 10...Subexhaust port, 11...Subexhaust pipe, 12
...Main exhaust port opening/closing valve, 13...Flow rate control device,
14...Gas inlet port, 15...Introduction pipe.
Claims (1)
するために該処理室に隣接して予備室を設けた低圧処理
装置において、該予備室に該予備室内を排気するための
主排気口に加えて、該主排気口より小径の副排気口を設
け、ポンプと該主排気口とを連通ずる主排気管から副排
気管を分岐させて該副排気口と連通し、該主排気管には
該分岐点と該主排気口の間に主排気口開閉バルブを設け
る一方、該予備室へのガス導入口に連通ずる導入管には
導入ガる流量を零から一定流量まで連続的かつ自動的に
増加させる流量制御装置を設けたことを特徴とする低圧
処理装置。In a low-pressure processing device that has a pre-chamber adjacent to a processing chamber for taking objects to be processed into and out of a processing chamber that is constantly maintained under low pressure, a main exhaust port for exhausting the inside of the pre-chamber into the pre-chamber. In addition, a sub-exhaust port with a smaller diameter than the main exhaust port is provided, and the sub-exhaust pipe is branched from the main exhaust pipe that communicates with the pump and the main exhaust port to communicate with the sub-exhaust port, and the main exhaust pipe is connected to the main exhaust pipe. A main exhaust port opening/closing valve is provided between the branch point and the main exhaust port, while the inlet pipe communicating with the gas inlet to the preliminary chamber has a continuous flow rate from zero to a constant flow rate. A low-pressure processing device characterized by being equipped with a flow rate control device that automatically increases the flow rate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15406482U JPS5958938U (en) | 1982-10-13 | 1982-10-13 | Low pressure processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15406482U JPS5958938U (en) | 1982-10-13 | 1982-10-13 | Low pressure processing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5958938U true JPS5958938U (en) | 1984-04-17 |
Family
ID=30340669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15406482U Pending JPS5958938U (en) | 1982-10-13 | 1982-10-13 | Low pressure processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5958938U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302719A (en) * | 1988-05-30 | 1989-12-06 | Sumitomo Electric Ind Ltd | Crystal vapor growth device |
-
1982
- 1982-10-13 JP JP15406482U patent/JPS5958938U/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302719A (en) * | 1988-05-30 | 1989-12-06 | Sumitomo Electric Ind Ltd | Crystal vapor growth device |
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