JPH0281033U - - Google Patents
Info
- Publication number
- JPH0281033U JPH0281033U JP15998288U JP15998288U JPH0281033U JP H0281033 U JPH0281033 U JP H0281033U JP 15998288 U JP15998288 U JP 15998288U JP 15998288 U JP15998288 U JP 15998288U JP H0281033 U JPH0281033 U JP H0281033U
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- thin film
- inert gas
- gas
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 239000000376 reactant Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Description
第１図は本考案装置の一実施例の構成を示す縦
断面図、第２図ａ，ｂは本考案装置の他の実施例
の要部を示す説明図、第３図は従来の化学気相生
成装置の代表例を示す縦断面図、第４図は従来の
光化学気相生成装置の一例を示す縦断面図である
。
１……チヤンバ、２……ウエーハ、３……サセ
プタ、４……反応ガス注入口、５……排気口、６
……不活性ガス注入口、６ａ……滑らかな曲線を
なす突起、７……不活性ガス通路、８……不活性
ガス噴出口。
Figure 1 is a longitudinal sectional view showing the configuration of one embodiment of the device of the present invention, Figures 2a and b are explanatory diagrams showing the main parts of another embodiment of the device of the present invention, and Figure 3 is a conventional chemical FIG. 4 is a vertical cross-sectional view showing an example of a conventional photochemical vapor phase generating device. 1... Chamber, 2... Wafer, 3... Susceptor, 4... Reaction gas inlet, 5... Exhaust port, 6
...Inert gas inlet, 6a... Smoothly curved projection, 7... Inert gas passage, 8... Inert gas outlet.
Claims (1)
セプタ３を設け、チヤンバ１に、反応ガスをウエ
ーハ２の表面に沿つて流入する反応ガス注入口４
及び当該反応ガスを排気する排気口５を備えた薄
膜生成装置において、チヤンバ１に、当該チヤン
バ１の内壁に沿い反応ガスの流れ方向に不活性ガ
スのガスカーテンを作るべく不活性ガス噴出口８
を設けてなる薄膜生成装置。 (2) 不活性ガス噴出口８の向きをチヤンバ１の
内壁の接線に対し０°〜１５°の角度範囲内に設
定した実用新案登録請求の範囲第１項記載の薄膜
生成装置。 (3) 不活性ガス噴出口８はチヤンバ１の内壁に
滑らかな曲面をなす突起６ａを設け、この突起６
ａに反応ガスの流れ方向に縞状に多数設けてなる
実用新案登録請求の範囲第１項、第２項のいずれ
かに記載の薄膜生成装置。[Claims for Utility Model Registration] (1) A susceptor 3 on which a wafer 2 is placed is provided in the chamber 1, and a reactive gas inlet 4 is provided to flow a reactive gas into the chamber 1 along the surface of the wafer 2.
In a thin film production apparatus equipped with an exhaust port 5 for exhausting the reaction gas, an inert gas outlet 8 is provided in the chamber 1 to create a gas curtain of inert gas in the flow direction of the reaction gas along the inner wall of the chamber 1.
A thin film generation device comprising: (2) The thin film generating device according to claim 1, wherein the direction of the inert gas outlet 8 is set within an angular range of 0° to 15° with respect to the tangent to the inner wall of the chamber 1. (3) The inert gas outlet 8 is provided with a projection 6a having a smooth curved surface on the inner wall of the chamber 1.
A thin film generating apparatus according to any one of claims 1 and 2, which is provided in a plurality of stripes in the flow direction of the reactant gas in the utility model registration claim.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15998288U JPH0281033U (en) | 1988-12-09 | 1988-12-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15998288U JPH0281033U (en) | 1988-12-09 | 1988-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0281033U true JPH0281033U (en) | 1990-06-22 |
Family
ID=31441666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15998288U Pending JPH0281033U (en) | 1988-12-09 | 1988-12-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0281033U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118462A (en) * | 2008-11-12 | 2010-05-27 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60193323A (en) * | 1984-03-15 | 1985-10-01 | Nec Corp | Semiconductor vapor phase growing apparatus |
-
1988
- 1988-12-09 JP JP15998288U patent/JPH0281033U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60193323A (en) * | 1984-03-15 | 1985-10-01 | Nec Corp | Semiconductor vapor phase growing apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118462A (en) * | 2008-11-12 | 2010-05-27 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP4634495B2 (en) * | 2008-11-12 | 2011-02-16 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
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