JPS61142864U - - Google Patents
Info
- Publication number
- JPS61142864U JPS61142864U JP2297885U JP2297885U JPS61142864U JP S61142864 U JPS61142864 U JP S61142864U JP 2297885 U JP2297885 U JP 2297885U JP 2297885 U JP2297885 U JP 2297885U JP S61142864 U JPS61142864 U JP S61142864U
- Authority
- JP
- Japan
- Prior art keywords
- gas introduction
- reactor
- door
- thin film
- purge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010926 purge Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案装置の一実施例の要部の構成を
示す断面図、第２図はその部の拡大詳細図、第
３図はこの種の従来の減圧ＣＶＤ装置の一例の構
成を示す簡略断面図である。
１……反応炉（反応管）、２……扉、３……ガ
ス導入部、５……パージ用ガス吹出口（Ｎ２ガス
吹出口）、６……薄膜生成用ガス導入ポート、７
……パージ用ガス導入ポート（Ｎ２ガス導入ポー
ト）、１１……ウエーハ出入口、１４……排気部
、１７……ウエーハ、１８……リング状吹出部。
FIG. 1 is a cross-sectional view showing the configuration of a main part of an embodiment of the device of the present invention, FIG. 2 is an enlarged detailed view of that part, and FIG. 3 is a configuration of an example of a conventional low-pressure CVD device of this type. It is a simplified sectional view. 1...Reaction furnace (reaction tube), 2...Door, 3...Gas introduction part, 5...Purge gas outlet ( N2 gas outlet), 6...Gas introduction port for thin film generation, 7
. . . Purge gas introduction port (N 2 gas introduction port), 11 . . . wafer inlet/outlet, 14 .
Claims (1)
内側の反応炉の部分にガス導入部を備え、このガ
ス導入部の薄膜生成用ガス導入ポートより薄膜生
成用ガスを導入して反扉側より排気することによ
り反応炉内のウエーハに薄膜を生成する減圧ＣＶ
Ｄ装置において、前記ガス導入部に、パージ用ガ
ス導入ポートと、当該パージ用ガス導入ポートに
連通し反応炉のウエーハ出入口の中心部に向かつ
てパージ用ガスを吹き出すための多数個のパージ
用ガス吹出口を有するリング状吹出部とを設けて
なることを特徴とする減圧ＣＶＤ装置。 A door is provided at the wafer entrance/exit of the reactor, and a gas introduction part is provided in the part of the reactor inside this door, and the thin film production gas is introduced from the thin film production gas introduction port of this gas introduction part from the opposite side of the door. Reduced pressure CV that generates a thin film on the wafer inside the reactor by evacuation
In apparatus D, the gas introduction section includes a purge gas introduction port, and a large number of purge gases that communicate with the purge gas introduction port and blow out the purge gas toward the center of the wafer inlet/outlet of the reactor. 1. A reduced pressure CVD apparatus comprising a ring-shaped blow-off section having a blow-off port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2297885U JPS61142864U (en) | 1985-02-19 | 1985-02-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2297885U JPS61142864U (en) | 1985-02-19 | 1985-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61142864U true JPS61142864U (en) | 1986-09-03 |
Family
ID=30515784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2297885U Pending JPS61142864U (en) | 1985-02-19 | 1985-02-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61142864U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933912A (en) * | 1972-07-31 | 1974-03-28 |
-
1985
- 1985-02-19 JP JP2297885U patent/JPS61142864U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933912A (en) * | 1972-07-31 | 1974-03-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960015715A (en) | Apparatus and method for controlling edge deposition on semiconductor substrates | |
| JPS61142864U (en) | ||
| JPH01145124U (en) | ||
| JPH04154117A (en) | Low pressure cvd system | |
| JPS6186472U (en) | ||
| JPH0282770U (en) | ||
| JPH01107124U (en) | ||
| JPH0517877Y2 (en) | ||
| JP2938070B1 (en) | Atmospheric pressure CVD equipment | |
| JPH0281033U (en) | ||
| JPH0721570Y2 (en) | Vertical low pressure CVD film manufacturing equipment | |
| JPS5821173Y2 (en) | Furnace tube | |
| JPH01123336U (en) | ||
| JP2992576B2 (en) | Vertical heat treatment equipment | |
| JPH05112870A (en) | Vertical vacuum cvd device | |
| JPH0235436U (en) | ||
| JPS62124847U (en) | ||
| JPH04139820A (en) | Vertical low pressure cvd apparatus | |
| JPH033733U (en) | ||
| JPS61156729A (en) | Reactor and control method thereof | |
| JPS5811240U (en) | Plasma CVD equipment | |
| JPH0323924U (en) | ||
| JPH0441174Y2 (en) | ||
| JPH0750272A (en) | Method and equipment for manufacturing semiconductor | |
| JPS5937728U (en) | CVD equipment |