JPS61156729A - Reactor and control method thereof - Google Patents
Reactor and control method thereofInfo
- Publication number
- JPS61156729A JPS61156729A JP28035184A JP28035184A JPS61156729A JP S61156729 A JPS61156729 A JP S61156729A JP 28035184 A JP28035184 A JP 28035184A JP 28035184 A JP28035184 A JP 28035184A JP S61156729 A JPS61156729 A JP S61156729A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- pipe
- exhaust
- local exhaust
- pressure loss
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 5
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 239000003595 mist Substances 0.000 abstract description 4
- 239000007795 chemical reaction product Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 238000005086 pumping Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は、半導体製造装置に関するもので、特に酸化及
び不純物拡散に使用される反応装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a semiconductor manufacturing apparatus, and particularly to a reaction apparatus used for oxidation and impurity diffusion.
従来の酸化及び不純物拡散のための反応装置は、第２図
に示１゛様に構成されている。すなわち、被処理体３を
収納する反応炉１と、この反応炉を加熱する加熱部材２
と、反応炉１に連結されリン等の不純物６を含むガス及
び不活性ガスを反応炉１に導入する導入管８と、その導
入管８へ流す流量を所定値に制御づ−る装置７ど反応炉
１の一端を局所排気部材４に連結する接続管５とを備え
ている。A conventional reactor for oxidation and impurity diffusion is constructed as shown in FIG. That is, a reaction furnace 1 that houses the object to be processed 3 and a heating member 2 that heats this reaction furnace.
and an inlet pipe 8 connected to the reactor 1 for introducing a gas containing impurities 6 such as phosphorus and an inert gas into the reactor 1, and a device 7 for controlling the flow rate flowing into the inlet pipe 8 to a predetermined value. A connecting pipe 5 connecting one end of the reactor 1 to a local exhaust member 4 is provided.
しかるに、従来の反応装置では、局所排気装置の排気ガ
ス速度が変動したとき、それに伴って反応炉内部の内圧
が変化し、このため、酸化膜厚、及びリン等の不純物濃
度にばらつきが生じ、歩留りが低いという問題があった
。又、リン等の不純物拡散の場合は、不純物源として使
用したリンの反応物が反応炉の炉口付近に付着し、その
ため被処理体の処理が完了し、反応炉中央から炉ロヘ引
き出す際、反応炉の炉口付近に付着したリンの反応物か
ら霧（ミスト）が発生し被処理体の表面に付着する等の
問題があった。However, in conventional reactors, when the exhaust gas velocity of the local exhaust device fluctuates, the internal pressure inside the reactor changes accordingly, resulting in variations in the oxide film thickness and the concentration of impurities such as phosphorus. There was a problem of low yield. In addition, in the case of diffusion of impurities such as phosphorus, the phosphorus reactant used as an impurity source adheres to the vicinity of the reactor mouth, so that when the processing of the object to be processed is completed and it is drawn out from the center of the reactor to the furnace bottom, There were problems such as mist generated from the phosphorus reactant adhering to the vicinity of the reactor mouth and adhering to the surface of the object to be treated.
本発明は、被処理体の処理枚数を増加したり、径を大き
くしたりしても、被処理体間及び被処理体内の部位間に
おける酸化膜厚及び拡散された不純物ｍ度のばらつきが
小さく、また被処理体の表面への不純物の反応物質の付
着を防ぎ、歩留りを高くすることを目的どする。According to the present invention, even if the number of objects to be processed is increased or the diameter of the objects to be processed is increased, variations in oxide film thickness and diffused impurity degree between objects to be processed and between parts within the object to be processed are small. The purpose is also to prevent the adhesion of impurity reactants to the surface of the object to be processed and to increase the yield.
（発明の概要）
本発明は、酸化あるいは不純物拡散を行なうどきは、反
応炉から局所排気までの圧力損失が大となるようにし、
これにより反応炉内の圧力の変動を小さくし、一方被処
理体を出し入れするときは反応炉から局所排気部までの
圧力損失が小となるようにし、これにより反応炉に付着
した不純物の反応物から発生する霧の強１ＩＩＪ排気を
行なうことを特徴とするものである。(Summary of the invention) The present invention provides a method for increasing the pressure loss from the reactor to the local exhaust when performing oxidation or impurity diffusion.
This reduces pressure fluctuations within the reactor, and also reduces the pressure loss from the reactor to the local exhaust section when objects to be processed are taken in and out. The feature is that the fog generated from the air is strongly exhausted.
（発明の実施例） 以下、本発明の一実施例を第１図を参照して説明する。(Example of the invention) An embodiment of the present invention will be described below with reference to FIG.
この実施例の反応装置は、被処理体３を収納する反応炉
１と、この反応炉を加熱する加熱部材２と、反応炉１に
連結される拡散物質例えばリン等の不純物６を含むガス
及び不活性ガスを該反応炉１に導入する導入管８と、そ
の導入管８へ流す流量を所定値に制御する装置７と、反
応炉１の一端を局所排気部４を接続する接続管５とを備
えた点で、第２図の従来の装置と同様であるが、その接
続管５と局所排気部４とが、２本の連結管９ａおよび９
ｂで連結されており、それぞれの連結管９ａ、９ｂに１
７−弁１０ａ、１０ｂが設けられている点で異なる。連
結管９ａは連結管９ｂよりも大径であり、両者の開口面
積の比は例えば４・＝１程度である。The reactor of this embodiment includes a reactor 1 that accommodates an object to be processed 3, a heating member 2 that heats the reactor, and a diffusion substance connected to the reactor 1, such as a gas containing impurities 6 such as phosphorus. An inlet pipe 8 for introducing inert gas into the reactor 1, a device 7 for controlling the flow rate to the inert gas to a predetermined value, and a connecting pipe 5 for connecting one end of the reactor 1 to the local exhaust section 4. The connecting pipe 5 and the local exhaust section 4 are connected to two connecting pipes 9a and 9.
1 to each connecting pipe 9a and 9b.
7 - differs in that valves 10a, 10b are provided. The connecting pipe 9a has a larger diameter than the connecting pipe 9b, and the ratio of their opening areas is, for example, about 4.=1.
上記の反応装置は、次のようにして使用される。The above reactor is used as follows.
即ち、酸化や不純物拡散を行なうときは、エアー弁１０
ａが閉じられ、エアー弁１０ｂが開かれる。That is, when performing oxidation or impurity diffusion, the air valve 10
a is closed and air valve 10b is opened.
この結果、反応炉１内のガスは、小径の管９ｂを介して
排気されることとなる。このため、反応炉１から局所排
気部４までの圧力損失が太き（なり、従って局所排気部
４の排気速度が変動しても、反応炉１内の圧力の変動を
小さく抑えることができる。この結果被処理体の酸化膜
厚や不純物濃度分を安定にすることができる。As a result, the gas in the reactor 1 is exhausted through the small diameter pipe 9b. Therefore, the pressure loss from the reactor 1 to the local exhaust section 4 is large (therefore, even if the pumping speed of the local exhaust section 4 fluctuates, fluctuations in the pressure inside the reactor 1 can be suppressed to a small level. As a result, the oxide film thickness and impurity concentration of the object to be processed can be stabilized.
一方、反応炉１に被処理体３を出し入れするときは、エ
アー弁１０ａ、１０ｂがともに開かれる。On the other hand, when loading and unloading the object 3 into the reactor 1, both the air valves 10a and 10b are opened.
このため、反応炉１から局所排気部４までの圧力損失が
小さくなって、反応炉１（その炉口付近も含め）内のガ
スが強制排気される。従って、炉［１付近に付着したリ
ンの反応物１２から発生する霧も強制排気される。この
結果、被処理体３の表面への霧状のリン反応物１２の付
着が防止できる。Therefore, the pressure loss from the reactor 1 to the local exhaust section 4 is reduced, and the gas in the reactor 1 (including the vicinity of the reactor mouth) is forcibly exhausted. Therefore, the mist generated from the phosphorus reactant 12 adhering to the vicinity of the furnace [1] is also forcibly exhausted. As a result, adhesion of the mist-like phosphorus reactant 12 to the surface of the object 3 to be processed can be prevented.
尚上記の実施例では、強制排気に際し、弁１０ａ、１０
ｂをともに開くこととしているが、弁１０ａのみを開く
こととしてもよい。In the above embodiment, the valves 10a and 10 are closed during forced exhaust.
Although both valves b are opened, only valve 10a may be opened.
以上のように本発明の装置によれば、反応炉と局所排気
部とが開口面積の大きい管と開口面積の小さい管とで連
結されている。従って、酸化や拡散に際しては、開口面
積の小さい管により反応炉と局所排気部とを連結するこ
とにより、圧力損失を大きくし、これにより、局所排気
部の排気速度の変動の彰胃を小さくし、被処理体の酸化
膜厚や不純物開度分布を安定化させることができる。ま
た、リン等の不純物拡散に際しては、開口面積の大きい
管により反応炉と局所排気部とを連結することにより圧
力損失を小さくし、これにより反応炉口付近に発生する
リン等の不純物の反応物の霧を強制排気でき、被処理体
表面への付着を防止することができる。As described above, according to the apparatus of the present invention, the reactor and the local exhaust section are connected by a tube with a large opening area and a tube with a small opening area. Therefore, during oxidation and diffusion, by connecting the reactor and the local exhaust section with a pipe with a small opening area, the pressure loss is increased, thereby reducing the change in the pumping speed of the local exhaust section. , it is possible to stabilize the oxide film thickness and impurity aperture distribution of the object to be processed. In addition, when diffusing impurities such as phosphorus, the pressure loss is reduced by connecting the reactor and the local exhaust section using a pipe with a large opening area. It is possible to forcefully exhaust the mist and prevent it from adhering to the surface of the object to be treated.
第１図は本発明に係る反応装置の一実施例を示す断面図
、第２図は従来の反応装置の一例を示す断面図である。
１・・・反応炉、２・・・加熱部材、３・・・被処理体
、４・・・局所排気部、５・・・接続管、６・・・不純
物源、７・・・ガス流量制御器、８・・・ガス導入管、
９ａ。
９ｂ・・・排気連結管、１０ａ、１０ｂ・・・エアー弁
、１２・・・リン反応物。
出願人代理人 猪 股 清
第１図
第２図FIG. 1 is a sectional view showing an embodiment of a reaction apparatus according to the present invention, and FIG. 2 is a sectional view showing an example of a conventional reaction apparatus. DESCRIPTION OF SYMBOLS 1... Reactor, 2... Heating member, 3... Treated object, 4... Local exhaust part, 5... Connecting pipe, 6... Impurity source, 7... Gas flow rate Controller, 8... gas introduction pipe,
9a. 9b... Exhaust connecting pipe, 10a, 10b... Air valve, 12... Phosphorus reactant. Applicant's agent Kiyoshi Inomata Figure 1 Figure 2
Claims (1)
る加熱部材と、前記反応炉に連結され拡散物質を含むガ
ス及び不活性ガスを前記反応炉に導入する導入管と、前
記反応炉と局所排気部材とを連結する第１および第２の
排気連結管とを備え、少なくとも前記第１の排気連結管
には開閉用の弁が設けられていることを特徴とする酸化
および不純物拡散のための反応装置。 ２、上記第１の排気連結管は前記第２の排気連結管より
開口面積が大きいことを特徴とする特許請求の範囲第１
項記載の装置。 ３、被処理体を収納する反応炉と、この反応炉を加熱す
る加熱部材と、前記反応炉に連結され拡散物質を含むガ
ス及び不活性ガスを前記反応炉に導入する導入管と、前
記反応炉と局所排気部材とを連結する排気連結手段を備
えた反応装置の制御方法において、酸化あるいは不純物
拡散を行なうときは、前記排気連結手段における圧力損
失が大となるようにし、これにより前記反応炉内の圧力
の変動を小さくし、一方被処理体を出し入れするときは
前記排気連結手段における圧力損失が小となるようにし
、これにより反応炉に付着した不純物の反応物から発生
する霧の強制排気を行なうことを特徴とする反応装置の
制御方法。[Scope of Claims] 1. A reactor that houses the object to be processed, a heating member that heats the reactor, and is connected to the reactor and introduces a gas containing a diffusion substance and an inert gas into the reactor. It comprises an introduction pipe and first and second exhaust connecting pipes that connect the reactor and a local exhaust member, and at least the first exhaust connecting pipe is provided with an opening/closing valve. Reactor for oxidation and impurity diffusion. 2. Claim 1, wherein the first exhaust connecting pipe has a larger opening area than the second exhaust connecting pipe.
Apparatus described in section. 3. A reactor that houses the object to be treated, a heating member that heats the reactor, an introduction pipe that is connected to the reactor and introduces a gas containing a diffusion substance and an inert gas into the reactor, and the reactor. In a method for controlling a reaction apparatus equipped with an exhaust connection means for connecting a furnace and a local exhaust member, when performing oxidation or impurity diffusion, the pressure loss in the exhaust connection means is increased, so that the reactor On the other hand, when the objects to be processed are taken in and taken out, the pressure loss in the exhaust connection means is made small, so that the fog generated from the impurity reactants adhering to the reactor can be forcibly exhausted. A method for controlling a reaction apparatus, characterized by performing the following steps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28035184A JPS61156729A (en) | 1984-12-27 | 1984-12-27 | Reactor and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28035184A JPS61156729A (en) | 1984-12-27 | 1984-12-27 | Reactor and control method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61156729A true JPS61156729A (en) | 1986-07-16 |
Family
ID=17623789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28035184A Pending JPS61156729A (en) | 1984-12-27 | 1984-12-27 | Reactor and control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61156729A (en) |
-
1984
- 1984-12-27 JP JP28035184A patent/JPS61156729A/en active Pending
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