JPH01244613A - Boat used for manufacture of semiconductor device - Google Patents
Boat used for manufacture of semiconductor deviceInfo
- Publication number
- JPH01244613A JPH01244613A JP7260988A JP7260988A JPH01244613A JP H01244613 A JPH01244613 A JP H01244613A JP 7260988 A JP7260988 A JP 7260988A JP 7260988 A JP7260988 A JP 7260988A JP H01244613 A JPH01244613 A JP H01244613A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- gas
- conical cover
- supplied
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 abstract description 19
- 238000011282 treatment Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体装置製造に用いるボートに関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a boat used for manufacturing semiconductor devices.
第２図Ｉｉ、従来の半導体処理用のボートを示しており
、（１１は拡散炉、ＣＶＤ炉等のチューブ、（２１は処
理ウェハ、（４１はボートである。FIG. 2Ii shows a conventional boat for semiconductor processing, (11 is a tube of a diffusion furnace, CVD furnace, etc., (21 is a processing wafer, and (41 is a boat).
次に、従来技術について説明する。チューブ山内に処理
ウェハを入れて、チューブＩＩＩ内に処理用ガスを流す
と、ガスの供給口に最も近いあ理ウェハにガスの流れが
衝突し、それ以外のウェハに供給される処理用ガスの酸
と大きな差があった。そこで、従来のボート＋６１でに
処理用ガスの供給側に例えば、石英の板（６１などを取
υ付け、供給側の処理ウェハにガスの流れが直接衝突し
ないようにして、ウェハごとに供給されるガスの歌が不
均一になることを防いでいる。Next, conventional technology will be explained. When a processing wafer is placed in the tube stack and processing gas is flowed into tube III, the gas flow collides with the gap wafer closest to the gas supply port, causing the processing gas supplied to other wafers to There was a big difference with acid. Therefore, for example, a quartz plate (61, etc.) is attached to the processing gas supply side of the conventional boat +61 to prevent the gas flow from directly colliding with the processing wafers on the supply side. This prevents the gas song from becoming uneven.
従来のボートに以上のように構成されているので、第８
図のように、石英板により、チューブＩｌｌ内の処理用
ガスの流れが石英板のすぐ後のウェハに流れ、ウェハご
とのガスの供給竜が異なり１例えば、ＣＶＤ処理を行っ
た場合、ウェハ上に形成された膜の厚さが、供給側から
岨れるに従い、薄くなるという問題があった。Since the conventional boat is configured as described above, the 8th
As shown in the figure, due to the quartz plate, the flow of processing gas in the tube Ill flows to the wafer immediately after the quartz plate, and the gas supply mechanism for each wafer is different1.For example, when performing CVD processing, There has been a problem in that the thickness of the film formed on the film becomes thinner from the supply side.
この発明は上記のような問題点を解消するためになされ
たもので、処理ウェハごとの処理用ガス供給耽の不−均
化を防止できるボートを得ることを目的としている。The present invention has been made to solve the above-mentioned problems, and aims to provide a boat that can prevent uneven supply of processing gas for each processing wafer.
この発明に係るボートは、円錐形のカバーを備えること
により、カバーを通過した処理用ガスの流れを一定にす
ることにより、ウェハごとに供給される処理用ガスの亀
の不均一化を防ぐものである。The boat according to the present invention is equipped with a conical cover to ensure a constant flow of processing gas passing through the cover, thereby preventing unevenness in the processing gas supplied to each wafer. It is.
この発明におけるボートは１円錐形のカバーを用いるこ
とにより、ボート上のすべての処理ウェハに均等にガス
を供給できる。By using a single conical cover, the boat according to the present invention can supply gas evenly to all processing wafers on the boat.
以下、この発明の一実施例を図について説明する。第１
図において、…は拡散炉、ＣＶＤ炉等のチューブ、１２
；は処理ウェハ、１３１本発明の円繊形のカバー１４１
を備えたボートである。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, ... is a tube of a diffusion furnace, CVD furnace, etc., 12
; is a processed wafer, 131 a circular-shaped cover 141 of the present invention;
It is a boat equipped with
この発明では、ボート（３１はチューブ…の中心軸と一
致する中心軸の円錐形のカバーを有している。このボー
） １ｕｌｌ ｉ処理用ガスの供給される側に円錐形の
カバー（４１の頂点が向かうようにチューブ＋ＩＩ内に
挿入する。拡散、ＣＶＤ処理等倉行っている間、処理用
のガスは第１図のように円錐形のカバーにより、処理ウ
ェハ（２）のまわりを、流れを乱すことなく、一定の流
酸で流れる。In this invention, the boat (31 has a conical cover whose central axis coincides with the central axis of the tube). Insert the wafer into Tube + II with the apex facing upward.During diffusion, CVD processing, etc., the processing gas flows around the processing wafer (2) through a conical cover as shown in Figure 1. Flows with constant flowing acid without disturbing the flow.
従って、ウェハごとのガス供給量の不均一化を防ぐ仁と
ができる。Therefore, it is possible to prevent non-uniformity in the amount of gas supplied to each wafer.
なお、上記実施例では、円錐形カバーとボートが一体化
したものを示したが、これらｒＯ離可能にしてもよい。In the above embodiment, the conical cover and the boat are integrated, but they may be separated.
以上のように、この発明によれば、半導体処理用ボート
に円錐形カバー倉有したので、処理用ガスのウェハごと
の供給量の不均一化を防止できる効果がある。As described above, according to the present invention, since the semiconductor processing boat is provided with a conical cover, it is possible to prevent uneven supply of processing gas from one wafer to another.
第１図はこの発明の一実施例による半導体処理用ボート
の概略図、第２図は従来のボートの概略図である。■は
拡散炉、ＣＶＤ炉等のチューブ、＋２１１ｄ処理ウエハ
、１３１本発明によるボート、１４１は円錐形カバー１
，６１従米のボート、 ＋６１石英板である。
なお１図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a schematic diagram of a semiconductor processing boat according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of a conventional boat. ■ is a tube of a diffusion furnace, CVD furnace, etc., +211d processed wafer, 131 is a boat according to the present invention, 141 is a conical cover 1
, 61 yen boat, +61 quartz plate. In addition, in FIG. 1, the same reference numerals indicate the same or equivalent parts.
Claims (1)
ーブの中心軸が一致し、頂点が処理用ガスの供給側に向
いた円錐形のカバーを備えた半導体装置製造に用いるポ
ート。A port used in the manufacture of semiconductor devices, such as a diffusion furnace or CVD furnace, which is equipped with a conical cover whose central axes coincide with each other and whose apex faces the processing gas supply side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7260988A JPH01244613A (en) | 1988-03-25 | 1988-03-25 | Boat used for manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7260988A JPH01244613A (en) | 1988-03-25 | 1988-03-25 | Boat used for manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01244613A true JPH01244613A (en) | 1989-09-29 |
Family
ID=13494305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7260988A Pending JPH01244613A (en) | 1988-03-25 | 1988-03-25 | Boat used for manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01244613A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07130670A (en) * | 1993-11-05 | 1995-05-19 | Nec Corp | Heat treatment boat for semiconductor wafer |
-
1988
- 1988-03-25 JP JP7260988A patent/JPH01244613A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07130670A (en) * | 1993-11-05 | 1995-05-19 | Nec Corp | Heat treatment boat for semiconductor wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107523805B (en) | Gas mixer and substrate board treatment | |
| JP2668258B2 (en) | Gas inlet for various reaction gases in the reaction vessel | |
| JP2004529834A (en) | Method for depositing a crystalline structure layer, gas inhalation element and apparatus for performing the method | |
| JPH0855842A (en) | Semiconductor wafer processing chamber with suscepter with which rear surface is coated | |
| JP2785614B2 (en) | Cylinder type epitaxial layer growth equipment | |
| JPH01244613A (en) | Boat used for manufacture of semiconductor device | |
| TWI276175B (en) | Plasma etcher | |
| TWI700388B (en) | Integration of dual remote plasmas sources for flowable cvd | |
| JPH0487323A (en) | Cvd apparatus | |
| JP3359474B2 (en) | Horizontal heat treatment equipment | |
| JPH03203227A (en) | Light-irradiation type gaseous phase treatment device | |
| JPH0316120A (en) | Chemical vapor growth device and gas head thereof | |
| JP2992576B2 (en) | Vertical heat treatment equipment | |
| JPH02312256A (en) | Wafer holding device | |
| JP3269883B2 (en) | Semiconductor manufacturing equipment | |
| JPH0917736A (en) | Method and apparatus for manufacturing semiconductor | |
| JP4000779B2 (en) | Epitaxial growth equipment | |
| JPH0517872A (en) | Thin film forming device | |
| JPH01256117A (en) | Vapor phase reaction equipment | |
| JPH01198016A (en) | Horizontal plasma cvd apparatus | |
| JPS60200531A (en) | Processor | |
| JPS5928332A (en) | Preparation of semiconductor device | |
| JPH04177721A (en) | Vapor growth device | |
| JPS596529A (en) | Wafer treatment device | |
| JPH03194924A (en) | Vertical processing equipment |