JPH03203227A - Light-irradiation type gaseous phase treatment device - Google Patents
Light-irradiation type gaseous phase treatment deviceInfo
- Publication number
- JPH03203227A JPH03203227A JP34463589A JP34463589A JPH03203227A JP H03203227 A JPH03203227 A JP H03203227A JP 34463589 A JP34463589 A JP 34463589A JP 34463589 A JP34463589 A JP 34463589A JP H03203227 A JPH03203227 A JP H03203227A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing chamber
- processing
- substrate
- exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007792 gaseous phase Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 abstract description 5
- 239000012808 vapor phase Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体ウェハや液晶表示器用ガラス基板など
の基板に、紫外線などの所要の光を照射しながら、所要
ガスの気相雰囲気で表面処理するのに用いられる光照射
型気相処理装置に関する。[Detailed Description of the Invention] <Industrial Application Field> The present invention is directed to surface treatment of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display in a vapor phase atmosphere of a required gas while irradiating the required light such as ultraviolet rays. The present invention relates to a light irradiation type vapor phase processing apparatus used for processing.
〈従来の技術〉
従来、この種の光照射型気相処理装置として、基板上に
塗布されたフォトレジスト膜をシリル化処理したり、あ
るいはフォトレジスト膜を灰化（アッシング）処理した
り、光ＣＶＤによる成膜処理をしたりする装置が知られ
ている。<Prior art> Conventionally, this type of light irradiation type vapor phase processing equipment has been used to silylate a photoresist film coated on a substrate, or to ash the photoresist film, or to ash the photoresist film. 2. Description of the Related Art Apparatuses that perform film formation processing by CVD are known.
第７図は、従来の光照射型気相処理装置の概略構成を示
した断面図である。FIG. 7 is a sectional view showing a schematic configuration of a conventional light irradiation type vapor phase processing apparatus.
この光照射型気相処理装置は、表面処理の対象物である
基板Ｗが載置される昇降可能な基板！３！置装ｌと、チ
ャンバ本体２とを備えている。基板載置台１の上昇状態
（第７図示の状態）において、基板載置台１とチャンバ
本体２との間で処理室３が形成される。基板載置台１に
は、基板Ｗを力ｎ熱するためのヒータ４が取り付けられ
ている。一方、チャンバ本体２は、基板Ｗの表面や処理
室３に導入された処理ガスを励起するための紫外線光Ｒ
５、紫外線を処理室３に向けて反射する反射板６、処理
室３と紫外線光源５とを隔てるために石英などの紫外線
透過性材料で形成された紫外線透過板７などを備えてい
る。This light irradiation type vapor phase processing apparatus is a substrate that can be raised and lowered on which a substrate W, which is the object of surface treatment, is placed! 3! It includes a device l and a chamber body 2. When the substrate mounting table 1 is in the raised state (the state shown in FIG. 7), a processing chamber 3 is formed between the substrate mounting table 1 and the chamber body 2. A heater 4 for heating the substrate W by a force n is attached to the substrate mounting table 1. On the other hand, the chamber body 2 uses ultraviolet light R to excite the surface of the substrate W and the processing gas introduced into the processing chamber 3.
5. A reflecting plate 6 for reflecting ultraviolet rays toward the processing chamber 3, and an ultraviolet transmitting plate 7 made of an ultraviolet transmissive material such as quartz to separate the processing chamber 3 and the ultraviolet light source 5 are provided.
このように基板Ｗの上方に光源５を配置した装置では、
仮に、処理ガスを供給するためのノズルなどの部材を基
板Ｗと光源５との間に設置すると、紫外線の照射効率が
低下するという不都合を生じるため、基板Ｗへの処理ガ
スの供給は、基板Ｗの真上からではなく、基板Ｗのやや
側方からなされる。つまり、処理ガスはチャンバ本体２
の側壁に設けられたガス導入孔８から処理室３内へ導入
される。紫外線照射下で、この処理ガスと基板Ｗの表面
との間で所要の反応処理が行われる。余剰の処理ガスや
反応処理によって発生したガスを含む排ガスは、同しく
チャンバ本体２の側壁に設けられたガス排気孔９を介し
て、処理室３外へ排出される。In the device in which the light source 5 is arranged above the substrate W in this way,
If a member such as a nozzle for supplying the processing gas is installed between the substrate W and the light source 5, there will be an inconvenience that the efficiency of ultraviolet irradiation will decrease. This is done not from directly above the substrate W but from slightly to the side of the substrate W. In other words, the processing gas is
The gas is introduced into the processing chamber 3 through a gas introduction hole 8 provided in the side wall of the chamber. Necessary reaction processing is performed between this processing gas and the surface of the substrate W under ultraviolet irradiation. Exhaust gas including excess processing gas and gas generated by the reaction process is discharged to the outside of the processing chamber 3 via a gas exhaust hole 9 also provided in the side wall of the chamber body 2 .
〈発明が解決しようとする課題〉
しかしながら、このような構成を有する従来例の場合に
は、次のような問題点がある。<Problems to be Solved by the Invention> However, the conventional example having such a configuration has the following problems.
すなわら、従来の光照射型気相処理装置は、チャンバ本
体２の側壁に設けられるガス導入孔８およびガス排気孔
９がそれぞれ１つであるため、処理室３内に導入された
処理ガスの多くはガス導入孔８からガス排気孔９に至る
最短コースを通って流れる。そのため、基板Ｗの表面全
体に処理ガスが均一に供給されなくなり、反応ムラが生
しやすいという問題点がある。In other words, the conventional light irradiation type vapor phase processing apparatus has one gas introduction hole 8 and one gas exhaust hole 9 provided in the side wall of the chamber body 2, so that the processing gas introduced into the processing chamber 3 is Most of the gas flows through the shortest course from the gas introduction hole 8 to the gas exhaust hole 9. Therefore, there is a problem that the processing gas is not uniformly supplied to the entire surface of the substrate W, and reaction unevenness tends to occur.
本発明は、このような事情に鑑みてなされたものであっ
て、処理室内の処理ガスの流れを均一にして、基板の表
面処理をムラな（行・うことができる光照射型気相処理
装置を提供することを目的としている。The present invention has been made in view of these circumstances, and is a light irradiation type vapor phase treatment that makes it possible to uniformly flow the processing gas in the processing chamber and perform uneven surface treatment of the substrate. The purpose is to provide equipment.
〈課題を解決するための手段〉
本発明は、このような目的を達成するために、次のよう
な構成をとる。<Means for Solving the Problems> In order to achieve the above object, the present invention has the following configuration.
すなわち、本発明は、処理室内に設けられた基板載置台
と、前記基板載置台上の基板を加熱する基板加熱手段と
、前記基板に光を照射する光源と、前記光源と処理室と
を隔てる光透過板と、前記処理室内へ処理ガスを導入す
るガス導入手段ど、前記処理室内から排ガスを排出する
排気手段と、を備えた光照射型気相処理装置において、
前記ガス導入手段は、処理室の周囲に環状のガス流入路
を配設し、このガス流入路に均等に配置したガス導入孔
を介して処理室の上方から処理室内へ処理ガスを導入す
るように構成され、前記排気手段は、処理室の周囲に環
状のガス流出路を配設し、このガス流出路に均等に配置
した排気孔を介して処理室の下方から排ガスを排出する
ように構成されたものである。That is, the present invention provides a substrate mounting table provided in a processing chamber, a substrate heating means that heats the substrate on the substrate mounting table, a light source that irradiates the substrate with light, and a device that separates the light source from the processing chamber. A light irradiation type gas phase processing apparatus comprising a light transmitting plate, a gas introducing means for introducing a processing gas into the processing chamber, and an exhaust means for discharging exhaust gas from the processing chamber,
The gas introduction means has an annular gas inflow path arranged around the processing chamber, and introduces the processing gas into the processing chamber from above the processing chamber through gas introduction holes evenly arranged in the gas inflow path. The exhaust means is configured such that an annular gas outflow path is arranged around the processing chamber, and exhaust gas is discharged from below the processing chamber through exhaust holes evenly arranged in the gas outflow path. It is what was done.
〈作用〉 本発明の作用は次のとおりである。<Effect> The effects of the present invention are as follows.
処理ガスは、処理室の周囲に設けられた環状のガス流入
路を流通し、このガス流入路に均等に配置されたガス導
入孔を介して処理室の上方から処理室内へ導入される。The processing gas flows through an annular gas inflow path provided around the processing chamber, and is introduced into the processing chamber from above the processing chamber through gas introduction holes evenly arranged in the gas inflow path.
一方、排ガスは、処理室の周囲にある環状のガス流出路
に均等に配置された排気孔を介して、処理室の下方から
ガス流出路に取り込まれて、処理室外へ排出される。こ
のように、ガス導入孔および排気孔が処理室の周囲に均
等に設けられているので、処理室内の処理ガスの流れが
均一になる。On the other hand, the exhaust gas is taken into the gas outlet path from below the processing chamber through exhaust holes arranged evenly in an annular gas outlet path around the processing chamber, and is discharged to the outside of the processing chamber. In this way, the gas introduction holes and the exhaust holes are provided evenly around the processing chamber, so that the flow of the processing gas within the processing chamber becomes uniform.
〈実施例〉
以下、本発明の実施例を図面に基づいて詳細に説明する
。<Example> Hereinafter, an example of the present invention will be described in detail based on the drawings.
第１図は、本発明の一実施例に係る光照射型気相処理装
置の概略構成を示した断面図である。FIG. 1 is a sectional view showing a schematic configuration of a light irradiation type vapor phase processing apparatus according to an embodiment of the present invention.
この光照射型気相処理装置は、昇降可能で一ヒ述した従
来装置と同様な基板載置台１１と、上昇状態の基板載置
台１１との間で処理室１３を形成するチャンバ本体１２
を備えている。基板載置台１１には、その上面に載置さ
れた基板Ｗを加熱するための手段としてのヒータ１４が
取り付けられている。ただし、基板加熱手段は、このよ
うなヒータ１４に限らず、例えば処理室１３の上方に赤
外線光源を取りつけることによって構成してもよい。This light irradiation type vapor phase processing apparatus includes a substrate mounting table 11 that can be raised and lowered and is similar to the conventional apparatus described above, and a chamber body 12 that forms a processing chamber 13 between the substrate mounting table 11 in an elevated state.
It is equipped with A heater 14 is attached to the substrate mounting table 11 as a means for heating the substrate W placed on the upper surface thereof. However, the substrate heating means is not limited to such a heater 14, and may be configured by, for example, installing an infrared light source above the processing chamber 13.
チャンバ本体１２は、上述した従来装置と同様な紫外線
光′ａ１５、反射板１６、処理室１３と紫外線光源１５
とを隔てる紫外線透過板１７などを備えるとともに、次
のような特徴的な構成をもった処理ガス導入手段と排気
手段とを備えている。The chamber body 12 includes an ultraviolet light 'a 15, a reflection plate 16, a processing chamber 13, and an ultraviolet light source 15 similar to the conventional apparatus described above.
It is provided with an ultraviolet transmitting plate 17 and the like that separates the processing gas from the processing gas, and processing gas introduction means and exhaust means having the following characteristic configurations.
本実施例の処理ガス導入手段は次のように構成されてい
る。The processing gas introducing means of this embodiment is constructed as follows.
すなわち、図示しないガス供給源から供給された処理ガ
スを処理室１３の周囲に沿って環状に流通させるための
ガス流入路１８がチャンバ本体１２の側壁内に形成され
ている。ガス流入路１８の上に、これと同心状で、例え
ばステンレス鋼などで形成されたガス導入リング１９が
ある。このガス導入リング１９に、ガス流入路１８と処
理室１３との間を連通ずる複数個のガス導入孔２０が形
成されている。That is, a gas inflow path 18 is formed in the side wall of the chamber body 12 for allowing a processing gas supplied from a gas supply source (not shown) to flow in an annular manner along the periphery of the processing chamber 13 . Above and concentrically with the gas inlet channel 18 is a gas inlet ring 19 made of, for example, stainless steel. A plurality of gas introduction holes 20 are formed in this gas introduction ring 19 to communicate between the gas inflow path 18 and the processing chamber 13 .
第１図および第２図に示すように、ガス導入孔２０はガ
ス流入路１Ｂに沿って等間隔に配置されており、処理ガ
スを処理室１３の上方に向けて噴出するように、その孔
軸は処理室１３の中心に向かって斜め−Ｌ方向に傾斜し
ている。その結果、ガス流入路１８を流れる処理ガスは
、各ガス導入孔２０を介して処理室１３の中心部上方に
向けて均等に噴出される。As shown in FIGS. 1 and 2, the gas introduction holes 20 are arranged at regular intervals along the gas inflow path 1B, and are arranged so that the processing gas is ejected upward from the processing chamber 13. The axis is inclined in the -L direction toward the center of the processing chamber 13. As a result, the processing gas flowing through the gas inflow path 18 is evenly ejected upward to the center of the processing chamber 13 via each gas introduction hole 20 .
処理室１３は、チャンバ本体１２に取り付けられた拡散
板２１によって、上下に分割されている。例えば石英ガ
ラス板などで構成された拡散板２１には、多数個の小孔
２２が均等に開ＬＪられている。この拡散板２１は、処
理室１３の上方に均等に噴出された処理ガスを、さらに
均等化して基板Ｗの表面に供給するために設けられたも
のである。ただし、本発明は、このような拡散板２１が
必ずしも設し：Ｉられている必要はない。The processing chamber 13 is divided into upper and lower parts by a diffusion plate 21 attached to the chamber body 12. A large number of small holes 22 are evenly opened in a diffusion plate 21 made of, for example, a quartz glass plate. This diffusion plate 21 is provided to further equalize the processing gas ejected evenly above the processing chamber 13 and supply it to the surface of the substrate W. However, the present invention does not necessarily require such a diffusion plate 21 to be provided.
ガス導入孔２０から噴出された処理ガスは、処理室１３
の上方の紫外線透過板１７の下面にあたって下降し、拡
散板２１の小孔２２を介して基板Ｗの表面に達する。紫
外線光源１５からの紫外線照射下で、前記処理ガスと基
板Ｗの表面との間で所要の反応処理が行われる。The processing gas ejected from the gas introduction hole 20 flows into the processing chamber 13.
The light hits the lower surface of the upper ultraviolet transmitting plate 17 and descends, reaching the surface of the substrate W through the small holes 22 of the diffusion plate 21. Under the irradiation of ultraviolet light from the ultraviolet light source 15, a necessary reaction process is performed between the processing gas and the surface of the substrate W.
次に、上述した反応処理によって生した排ガスを処理室
１３の外へ排出するための排気手段について説明する。Next, a description will be given of an exhaust means for discharging the exhaust gas generated by the above-mentioned reaction process to the outside of the processing chamber 13.
チャンバ本体１２の側壁内でガス流入路１８の下方に位
置するところに、環状のガス流出路２３が設けられてい
る。このガス流出路２３に、ガス流出路２３と処理室１
３との間を連通ずる複数個の排気孔２４が形成されてい
る。An annular gas outlet passage 23 is provided within the side wall of the chamber body 12 below the gas inlet passage 18 . This gas outflow path 23 is connected to the gas outflow path 23 and the processing chamber 1.
A plurality of exhaust holes 24 are formed to communicate with each other.
第１図および第５図に示すように、各排気孔２４は、基
板Ｗが載置される基板載置台１１の上面よりも下方、す
なわち処理室１３の下方に位置し、ガス流出路２３に沿
って等間隔に配置されている。As shown in FIGS. 1 and 5, each exhaust hole 24 is located below the upper surface of the substrate mounting table 11 on which the substrate W is placed, that is, below the processing chamber 13, and is connected to the gas outlet path 23. They are placed at equal intervals along the line.
このように、複数個の排気孔２４を処理室Ｉ３の下方に
均等に設けることにより、上述した反応処理で生じた排
ガスは、処理室１３の周囲に向けて均等に流れて、各排
気孔２４を介してガス流出路２３内に排出される。ガス
流出路２３は、図示しない排気ポンプに接続されたり、
あるいは大気開放されることによって、排ガスを処理室
１３外へ排出する。In this way, by providing a plurality of exhaust holes 24 evenly below the processing chamber I3, the exhaust gas generated in the above-mentioned reaction process flows evenly toward the periphery of the processing chamber 13, and The gas is discharged into the gas outlet passage 23 through the gas outlet passage 23. The gas outlet path 23 is connected to an exhaust pump (not shown),
Alternatively, the exhaust gas is discharged to the outside of the processing chamber 13 by being opened to the atmosphere.
なお、本発明は次のように変形実施することも可能であ
る。Note that the present invention can also be modified as follows.
（１）上述の実施例では、ガス導入孔２０を処理室１３
の中心に向けて形成したが、第３図の部分平面図に示す
ように、ガス流入路１８に沿ったガス導入リング２５に
、処理室１３の半径方向に対して傾斜した方向へ向かう
ガス導入孔２６を形成してもよい。(1) In the above embodiment, the gas introduction hole 20 is connected to the processing chamber 13.
However, as shown in the partial plan view of FIG. Holes 26 may also be formed.
このようなガス導入孔２６から処理ガスが噴出されると
、この処理ガスは処理室１３内で渦巻状の流れとなって
拡散し、処理室１３内の処理ガスの流れを一層均一化す
ることができる。When the processing gas is ejected from such a gas introduction hole 26, this processing gas becomes a spiral flow and diffuses within the processing chamber 13, thereby making the flow of the processing gas within the processing chamber 13 more uniform. I can do it.
（２）本発明におけるガス導入孔は、必ずしも処理室へ
開口する小孔である必要はなく、例えば第４図に示すよ
うに、筒状のガス導入リング２７の内周面にガス導入ス
リット２８を形成し、このスリット２８を介して処理ガ
スを導入するものであってもよい。(2) The gas introduction hole in the present invention does not necessarily have to be a small hole opening into the processing chamber; for example, as shown in FIG. The processing gas may be introduced through the slit 28.
（３）第２図ないし第４図に示したような例において、
ガス流入路１８に処理ガスを供給するための処理ガス流
入口１８ａから遠ざかるに従ってガス導入孔２０．２６
（、あるいは、スリン１〜２８）からの処理ガス噴出
量が若干少なくなることも考えられる。(3) In the examples shown in Figures 2 to 4,
Gas inlet holes 20.26 increase as the distance from the processing gas inlet 18a for supplying processing gas to the gas inflow path 18 increases.
It is also conceivable that the amount of processing gas ejected from Surins 1 to 28 (or Surins 1 to 28) may be slightly reduced.
このような場合、処理ガス流入口１８ａから離れるに従
って、ガス導入孔２０．２６の径（あるいは、スリット
２８の幅）を大きくすることによって、各ガス導入孔２
０．２６ （あるいはスリット２８）間の処理ガス噴出
量の若干の不均一性を修正するようにしてもよい。In such a case, the diameter of each gas introduction hole 20.26 (or the width of the slit 28) may be increased as the distance from the processing gas inlet 18a increases.
0.26 (or between the slits 28) may be corrected.
あるいは、第２図および第３図に示した例では、処理ガ
ス流入口１８ａから離れるに従って、ガス導入孔２０．
２６の数を増やすことによって、上記と同様の効果を得
ることもできる。Alternatively, in the example shown in FIGS. 2 and 3, the gas introduction hole 20.
By increasing the number of 26, the same effect as above can be obtained.
（４）上述の実施例では、排気孔２４を処理室１３に開
口する小孔で形成したが、これは第６図に示すように排
気用スッリト２９で構成してもよい。(4) In the above-described embodiment, the exhaust hole 24 is formed by a small hole opening into the processing chamber 13, but it may be formed by an exhaust slit 29 as shown in FIG.
（５）また、上述したガス導入孔の場合と同様に、ガス
流出路２３のガス流出口２３ａから離れるに従って、排
気孔２４の径（あるいは、スリット２９の幅）を大きく
したり、排気孔２４を多く設けることによって、各排気
孔２４（あるいはスリット２９）間の排気量の若干の不
均一性を修正するようにしてもよ〈発明の効果〉
以上の説明から明らかなように、本発明によれば、処理
室の周囲に環状のガス流入路を設け、このガス流入路に
均等に配置されたガス導入孔を介して処理室の上方から
処理室内へ処理ガスを導入し、また、処理室の周囲に環
状のガス流出路を設け、このガス流出路に均等に配置さ
れた排気孔を介して処理室の下方から排気ガスを排出し
ているので、処理室内の処理ガスの流れが均一化して、
処理ガスが基板表面に均等に接触する結果、ムラのない
表面処理を行うことができる。(5) Similarly to the case of the gas introduction hole described above, the diameter of the exhaust hole 24 (or the width of the slit 29) may be increased as the distance from the gas outlet 23a of the gas outlet path 23 increases, or the diameter of the exhaust hole 24 (or the width of the slit 29) may be By providing a large number of slits, it is possible to correct some non-uniformity in the exhaust volume between the respective exhaust holes 24 (or slits 29). <Effects of the Invention> As is clear from the above description, the present invention has advantages. According to the method, an annular gas inflow path is provided around the processing chamber, and processing gas is introduced into the processing chamber from above the processing chamber through gas introduction holes evenly arranged in the gas inflow path. An annular gas outflow path is provided around the gas outflow path, and exhaust gas is discharged from below the processing chamber through exhaust holes evenly placed in this gas outflow path, so the flow of processing gas within the processing chamber is uniform. hand,
As a result of the processing gas coming into even contact with the substrate surface, even surface processing can be performed.
第１図ないし第６図は本発明の実施例に係り、第１図は
光照射型気相処理装置の概略構成を示した断面図、第２
図はガス導入手段の構成例を示す斜視図、第３図はガス
導入手段の変形例を示す部分平面図、第４図はガス導入
手段の他の変形例を示す斜視図、第５図は排気手段の構
成例を示す一部破断斜視図、第６図は排気手段の変形例
を示す一部破断斜視図である。
第７図は従来装置の概略構成を示した断面図である。
１１・・・基板載置台 １４・・・ヒータ１５・・
・紫外線光源 １７・・・紫外線透過板１８・・・
ガス流入路 ２０．２６・・・ガス導入孔２３・・
・ガス流出路 ２４・・・排気孔２８・・・ガス導
入用スリット
２９・・・ガス排気用スリット1 to 6 relate to embodiments of the present invention, in which FIG. 1 is a cross-sectional view showing a schematic configuration of a light irradiation type vapor phase processing apparatus, and FIG.
3 is a partial plan view showing a modified example of the gas introducing means, FIG. 4 is a perspective view showing another modified example of the gas introducing means, and FIG. 5 is a perspective view showing an example of the configuration of the gas introducing means. FIG. 6 is a partially cutaway perspective view showing a configuration example of the exhaust means, and FIG. 6 is a partially cutaway perspective view showing a modification of the exhaust means. FIG. 7 is a sectional view showing a schematic configuration of a conventional device. 11... Board mounting table 14... Heater 15...
・Ultraviolet light source 17...Ultraviolet transmission plate 18...
Gas inflow path 20.26...Gas introduction hole 23...
・Gas outflow path 24...Exhaust hole 28...Gas introduction slit 29...Gas exhaust slit
Claims (1)
置台上の基板を加熱する基板加熱手段と、 前記基板に光を照射する光源と、 前記光源と処理室とを隔てる光透過板と、 前記処理室内へ処理ガスを導入するガス導入手段と、 前記処理室内から排ガスを排出する排気手段と、を備え
た光照射型気相処理装置において、 前記ガス導入手段は、処理室の周囲に環状のガス流入路
を配設し、このガス流入路に均等に配置したガス導入孔
を介して処理室の上方から処理室内へ処理ガスを導入す
るように構成され、 前記排気手段は、処理室の周囲に環状のガス流出路を配
設し、このガス流出路に均等に配置した排気孔を介して
処理室の下方から排ガスを排出するように構成されてい
ることを特徴とする光照射型気相処理装置。(1) A substrate mounting table provided in a processing chamber, a substrate heating means that heats the substrate on the substrate mounting table, a light source that irradiates the substrate with light, and a light transmitting plate that separates the light source from the processing chamber. A light irradiation type gas phase processing apparatus comprising: a gas introducing means for introducing a processing gas into the processing chamber; and an exhaust means for discharging exhaust gas from the processing chamber; An annular gas inflow path is disposed in the gas inflow path, and the processing gas is introduced into the processing chamber from above the processing chamber through gas introduction holes evenly arranged in the gas inflow path, and the exhaust means is configured to introduce the processing gas into the processing chamber from above the processing chamber. Light irradiation characterized in that an annular gas outflow path is arranged around the chamber, and the exhaust gas is discharged from below the processing chamber through exhaust holes evenly arranged in the gas outflow path. type gas phase treatment equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34463589A JPH0636409B2 (en) | 1989-12-28 | 1989-12-28 | Light irradiation type vapor phase treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34463589A JPH0636409B2 (en) | 1989-12-28 | 1989-12-28 | Light irradiation type vapor phase treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03203227A true JPH03203227A (en) | 1991-09-04 |
| JPH0636409B2 JPH0636409B2 (en) | 1994-05-11 |
Family
ID=18370789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34463589A Expired - Fee Related JPH0636409B2 (en) | 1989-12-28 | 1989-12-28 | Light irradiation type vapor phase treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0636409B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07312329A (en) * | 1994-05-18 | 1995-11-28 | Dainippon Screen Mfg Co Ltd | Apparatus and method for strengthening adhesion |
| JP2002151489A (en) * | 2000-08-11 | 2002-05-24 | Tokyo Electron Ltd | Substrate processing apparatus and processing method |
| JP2008503036A (en) * | 2004-06-18 | 2008-01-31 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Medium injector |
| JP2009224775A (en) * | 2008-02-20 | 2009-10-01 | Tokyo Electron Ltd | Gas supply equipment, film-forming apparatus, and film formation method |
| CN102405515A (en) * | 2009-04-20 | 2012-04-04 | 应用材料公司 | Quartz window having gas feed and processing equipment incorporating same |
| WO2014132927A1 (en) * | 2013-03-01 | 2014-09-04 | 東京エレクトロン株式会社 | Hydrophobization treatment device, hydrophobization treatment method, and hydrophobization-treatment recording medium |
| JP2016149526A (en) * | 2015-02-12 | 2016-08-18 | エーエスエム アイピー ホールディング ビー．ブイ． | Semiconductor manufacturing apparatus |
-
1989
- 1989-12-28 JP JP34463589A patent/JPH0636409B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07312329A (en) * | 1994-05-18 | 1995-11-28 | Dainippon Screen Mfg Co Ltd | Apparatus and method for strengthening adhesion |
| JP2002151489A (en) * | 2000-08-11 | 2002-05-24 | Tokyo Electron Ltd | Substrate processing apparatus and processing method |
| JP2008503036A (en) * | 2004-06-18 | 2008-01-31 | ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Medium injector |
| JP2009224775A (en) * | 2008-02-20 | 2009-10-01 | Tokyo Electron Ltd | Gas supply equipment, film-forming apparatus, and film formation method |
| CN102405515A (en) * | 2009-04-20 | 2012-04-04 | 应用材料公司 | Quartz window having gas feed and processing equipment incorporating same |
| WO2014132927A1 (en) * | 2013-03-01 | 2014-09-04 | 東京エレクトロン株式会社 | Hydrophobization treatment device, hydrophobization treatment method, and hydrophobization-treatment recording medium |
| JP2014170806A (en) * | 2013-03-01 | 2014-09-18 | Tokyo Electron Ltd | Hydrophobic treatment apparatus, hydrophobic treatment method and hydrophobic treatment recording medium |
| JP2016149526A (en) * | 2015-02-12 | 2016-08-18 | エーエスエム アイピー ホールディング ビー．ブイ． | Semiconductor manufacturing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0636409B2 (en) | 1994-05-11 |
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