JP2000294538A - Vacuum treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum treating apparatus for diffusing reaction gas across the whole surface of a substrate to be treated with uniform distribution by easily and quickly adjusting and controlling the feeding of reaction gas at the changing of the dimensions or processing condition of the substrate to be treated. SOLUTION: In this apparatus, plural gas inlet parts 37-39 wiring-connected via individual gas feeding systems with a gas feeding source 7 for a reaction gas G are arranged on another electrode 28, which is arranged inside the vacuum chamber 1 so as to be faced to one electrode 13 on which a substrate 14 to be treated is mounted, and which is used also for a gas feeding part for introducing the reaction gas G from a gas ejection hole 31 to the inside part of a vacuum chamber 1. In this case, the reaction gas G can be introduced inside the vacuum chamber 1 with a uniform distribution.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used for manufacturing a substrate such as a semiconductor device or a liquid crystal display device for performing a surface treatment such as dry etching, CVD or sputtering on the substrate to be processed. The present invention mainly relates to a vacuum processing apparatus using plasma.

[0002]

2. Description of the Related Art FIG. 7A is a schematic vertical sectional view showing the structure of a conventional general vacuum processing apparatus, and FIG. 7 illustrates a general plasma processing apparatus as the vacuum processing apparatus.
In FIG. 1, inside a vacuum chamber 1, internal air is exhausted through an exhaust port 2 by a vacuum pump (not shown), and is formed on a shower plate 5 constituting a bottom surface of an upper electrode 3 serving also as a gas supply unit. A reaction gas G such as an etching gas or a film forming gas is introduced from the large number of gas blowing holes 4. Reaction gas G to this vacuum chamber 1
Is supplied from a gas supply source 7 to a primary valve 8, a mass flow controller (flow rate adjusting unit) 9, and a secondary valve 1
The gas space 12 is supplied to a gas inlet 11 above the upper electrode 3 through a gas supply system 6 made up of an upper electrode 3 and a gas space 12 formed between the upper electrode 3 and the top surface of the vacuum chamber 1 through the gas inlet 11. Is supplied to the internal space of the vacuum chamber 1 from the gas outlets 4.

On the other hand, an electrode stage 13a which is an upper surface of a lower electrode 13 installed on a bottom surface inside the vacuum chamber 1
A substrate to be processed 14 such as a silicon substrate to be surface-treated is placed and set thereon. Then, in a gas atmosphere in which the reaction gas G is introduced into the evacuated inner space of the vacuum chamber 1, a high frequency power is supplied from a high frequency power supply (not shown) between the lower electrode 13 and the upper electrode 3. By being supplied, plasma is generated between the lower electrode 13 and the upper electrode 3, and a desired plasma process such as dry etching or CVD is performed on the surface of the substrate 14 to be processed.

[0004] The gas outlet 4 has a diameter of 0.2 mm or more.
It has a very small diameter of about 2 mm and a shower plate 5
Are formed in a uniform arrangement over the entire surface of the substrate. As a result, the reaction gas G in the gas space 12 is introduced while diffusing into the internal space of the vacuum chamber 1 through the large number of gas blowing holes 4 and is introduced into the substrate to be processed 14 set on the electrode stage 13a. On the other hand, it is made to be able to be distributed almost evenly over the entire surface.

FIG. 8A is a schematic vertical sectional view showing the structure of another conventional vacuum processing apparatus.
Components that are the same as or equivalent to those in FIG. In FIG. 7, as clearly shown in FIG. 7B, the rectangular substrate to be processed 14 is subjected to the surface treatment, and the lower electrode 13 and the upper electrode 3 are both planar surfaces corresponding to the substrate to be processed 14. In contrast to the rectangular shape as viewed, this vacuum processing apparatus has, as shown in FIG.
The circular substrate 17 is to be subjected to surface treatment.

Accordingly, the lower electrode 18 is formed on the substrate 1 to be processed.
7 has a circular electrode stage 18a and also serves as a gas supply unit. As shown in the perspective view of FIG. 8B, the upper electrode 19 has an annular pipe shape corresponding to the circular substrate 17 to be processed. Is a nozzle form in which a number of gas blowing holes 21 are arranged at regular intervals along the lower surface of the nozzle. The upper electrode 19 is disposed above the inner space of the vacuum chamber 1 so as to face the lower electrode 18, and is supported on the side wall of the vacuum chamber 1 via a gas introduction pipe 20 extending from a part thereof. Have been. As shown in FIG. 7A, the gas introduction pipe 20 is provided with a primary valve 8, a mass flow controller (flow rate adjusting unit) 9 from a gas supply source 7.
A reaction gas G is supplied through a gas supply system 6 including a secondary valve 10, and the reaction gas G passes through a number of gas outlets 21 of an upper electrode 19 from a gas introduction pipe 20 and is supplied to the internal space of the vacuum chamber 1. Will be introduced. The gas outlets 21 have a small diameter and are arranged in large numbers at minute intervals so that the reaction gas G can be evenly distributed over the entire surface of the substrate 17 set on the electrode stage 18a.

[0007]

However, in the vacuum processing apparatus of FIG. 7, the reaction gas G of the gas supply source 7 is supplied to the gas space 12 of the upper electrode 3 through the gas supply system 6 of one line.
Is supplied to the central portion of the vacuum chamber 1 through all of the gas outlets 4 even though all of the gas outlets 4 are formed with the same diameter and the same arrangement.
The amount of the reaction gas G introduced into the inside is largest at the central portion of the shower plate 5 closest to the gas introduction part 11, and is biased so as to gradually decrease toward the outside.

On the other hand, in the vacuum processing apparatus shown in FIG. 8, the reaction gas G is similarly supplied from the gas introduction pipe 20 to the upper electrode 19 in the form of an annular nozzle through the gas supply system 6 of one line. Although the holes 21 are also formed with the same diameter and uniform arrangement, the amount of the reaction gas G introduced into the vacuum chamber 1 through each of the gas blowing holes 21 depends on the upper electrode 19. At the portion closest to the gas introduction pipe 20 (right side in the figure), and gradually decreases in the direction away from the gas introduction pipe 20 (leftward in the figure).

When the amount of the reaction gas G introduced is unevenly distributed in the vacuum chamber 1 as described above, a thin film having a uniform film thickness cannot be formed by sputtering for forming a thin film corresponding to the components of the plasma. On the other hand, in dry etching in which a required semiconductor pattern is formed by selectively removing a semiconductor layer on a semiconductor wafer by a plasma gas according to a photoresist, a uniform etching depth cannot be obtained. For this reason, the processing quality of the substrates 14 and 17 after the surface treatment is reduced, and defective products are generated, which causes a reduction in the yield of semiconductor elements and liquid crystal display elements.

The occurrence of the above-mentioned problem will be specifically described. FIG. 7B is an explanatory diagram of the film thickness distribution of the thin film on the substrate to be processed 14 formed by the vacuum processing apparatus of FIG. 7A, and shows the magnitude of the film thickness by sparse and dense points. , The denser the point, the larger the film thickness. Accordingly, it can be seen that the film thickness is largest in the central region 22 of the substrate to be processed 14 with a large amount of gas flow from the corresponding gas outlet 4, and becomes smaller toward the outer side. Such a problem caused by the non-uniform distribution of the reaction gas G inside the vacuum chamber 1 becomes more remarkable as the size of the substrate to be subjected to the surface treatment increases. For example, in FIG.
Is 100 mm or more, and the dimension B of the outer peripheral region 23 is 300 mm or more.
3, the film thickness or etching depth is reduced to about half as compared with the central region 22.

On the other hand, FIG. 8C is an explanatory view of the film thickness distribution of the thin film on the substrate 17 to be processed formed by the vacuum processing apparatus of FIG. The size is indicated by the density of points, and the denser the point, the larger the film thickness. Therefore, the film thickness is
It can be seen that the portion on the side corresponding to the gas introduction pipe 20 is largest, and becomes smaller as it goes away from the gas introduction pipe 20. In this case, the occurrence of the problem becomes more remarkable as the diameter of the circular substrate 17 to be processed increases. For example, in FIG. 8C, in the surface treatment of a large substrate 17 having a diameter φ of 300 mm or more, the film thickness or the etching depth in the one side region 24 close to the gas introduction pipe 20 is reduced. Is reduced to about half as compared with.

In order to prevent a decrease in the yield of semiconductor elements and liquid crystal display elements caused by the non-uniform distribution of the reaction gas G as described above, a recent vacuum processing apparatus employs an upper electrode 3, As 19, the one formed by appropriately changing the diameter, arrangement, or number of the gas blowout holes 4, 21 so that the reaction gas G can be evenly dispersed over the entire surfaces of the substrates to be processed 14, 17 to be surface-treated. Prepare many types,
These upper electrodes 3 and 19 are appropriately selected and attached.

However, the distribution of the reaction gas G by appropriately replacing the upper electrodes 3 and 19 is adjusted every time the substrates 14 and 17 to be subjected to the surface treatment are changed to ones having different dimensions, and the supplied reaction gas G is supplied. The vacuum chamber 1 is opened and closed to change the upper electrode 3 and
It must be done while repeating the exchange. Therefore, there is a problem that a considerable adjustment time and complicated adjustment work are required until an evenly dispersed state of the reaction gas G adapted to the substrates to be processed 14 and 17 is obtained. Such a problem has become more prominent in recent years as the size of a semiconductor wafer as a semiconductor element to be surface-treated or a liquid crystal substrate of a liquid crystal display element has been promoted.

In view of the above, the present invention has been made in view of the above-mentioned conventional problems, and it is possible to easily and quickly adjust and control the supply of a reactive gas even when the size of a substrate to be processed and processing conditions are changed, so that the processing target is It is an object of the present invention to provide a vacuum processing apparatus capable of dispersing a reaction gas in a uniform distribution over the entire surface of a substrate.

[0015]

In order to achieve the above object, a vacuum processing apparatus according to one aspect of the present invention includes a vacuum chamber evacuated to a vacuum, and a substrate to be processed provided inside the vacuum chamber. One electrode to be attached, and the other electrode provided inside the vacuum chamber in a position opposed to the one electrode and serving also as a gas supply unit for introducing a reaction gas from a gas outlet into the vacuum chamber. A plurality of gas introduction units connected to the other electrode via a separate gas supply system and connected to a gas supply source of the reaction gas, thereby introducing the reaction gas into the vacuum chamber with an even distribution. It is characterized by being provided in a possible arrangement.

In this vacuum processing apparatus, the reaction gas is supplied to the gas introduction sections provided at a plurality of locations of the other electrode also serving as the gas supply section for the reaction gas via individual gas supply systems. It is possible to remarkably reduce the bias of the distribution of the reaction gas caused by blowing out a large amount of the reaction gas from the gas outlet close to the single gas inlet.

In the above invention, it is preferable that the gas supply system has a flow rate adjusting section which can be independently controlled.

Thus, the supply amount of the reactant gas to each gas introduction unit can be independently adjusted by controlling the flow control unit in the gas supply system individually connected to each gas introduction unit. it can. Therefore, the reaction gas can be dispersed so as to be accurately and uniformly distributed over the entire surface of the substrate to be processed, and when the dimensions of the substrate to be processed and processing conditions are changed, open and close the vacuum chamber. In addition, by adjusting and controlling the respective flow controllers outside the vacuum chamber, it is possible to easily and quickly perform the adjustment for dispersing the reaction gas accurately and uniformly over the entire surface of the substrate to be processed.

In the above invention, the other electrode is
A shower plate in which gas discharge holes of minute diameters are formed in a uniform arrangement has a gas space arranged on the side facing one of the electrodes, and the inside of this gas space is divided into a plurality of gas space portions by partition walls. And a gas introduction unit connected to a gas supply source via an individual gas supply system in each gas space is provided.

Thus, the amount of gas supplied to each of the plurality of gas spaces can be independently adjusted and controlled via the individual gas supply systems without being affected by the amount of gas supplied to other gas spaces. Accordingly, the control for dispersing the reaction gas so as to be evenly distributed over the entire surface of the substrate to be processed can be performed more accurately and easily.

On the other hand, in the above invention, the other electrode is
At least a central electrode portion and a peripheral electrode portion in which gas discharge holes having a small diameter are formed in a uniform arrangement and have an annular shape similar to each other are formed, and the peripheral electrode portion is fixed with respect to the central electrode portion. It is also possible to adopt a configuration in which a gas introduction unit is provided around the gap with a gap therebetween, and each of the electrode units is connected to a gas supply source via a separate gas supply system.

Thus, the respective gas supply amounts to the inside of the vacuum chamber via the plurality of electrode portions can be independently controlled without being affected by the gas supply amounts of the other electrode portions via the individual gas supply systems. Therefore, control for dispersing the reaction gas so as to be evenly distributed over the entire surface of the substrate to be processed can be performed more accurately and easily.

A vacuum processing apparatus according to another aspect of the present invention includes a vacuum chamber evacuated to a vacuum, one electrode provided inside the vacuum chamber, to which a substrate to be processed is attached, and the one electrode. The other electrode which is provided inside the vacuum chamber in a vertically opposed arrangement and serves also as a gas supply unit for introducing a reaction gas into the inside of the vacuum chamber from a gas outlet, and a side wall of the vacuum chamber. A plurality of auxiliary gas blowout holes are formed at equal intervals along the annular arrangement, and the reaction gas is introduced into the vacuum chamber, and the other electrode and the auxiliary gas blowout holes are provided.
It is characterized by being connected to a gas supply source via individual gas supply paths each having a flow rate adjusting section by piping.

In this vacuum processing apparatus, the gas supply amount to be supplied to the other electrode via the gas introduction unit and the gas supply amount via the auxiliary gas outlet are adjusted by the flow control unit of the individual gas supply system. By adjusting and controlling the reaction gas, the reaction gas can be distributed so as to be accurately and evenly distributed over the entire surface of the substrate to be processed, and when the size of the substrate to be processed and the processing conditions are changed, the vacuum chamber is changed. Adjustment and control of each flow rate control unit outside of the vacuum chamber without opening and closing, to easily and quickly perform adjustment for dispersing the reaction gas accurately and evenly over the entire surface of the substrate to be processed. Can be.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a vacuum processing apparatus according to a first embodiment of the present invention. FIG. 1 (a) is a schematic longitudinal sectional view showing the structure thereof, and FIG. 1 (b) is a bottom view of an upper electrode in the apparatus. In FIG.
7 that are the same as or equivalent to those in FIG. 7 are denoted by the same reference numerals and description thereof is omitted, and only configurations different from those in FIG. 7 will be described below.

In this vacuum processing apparatus, as in FIG. 7, a rectangular substrate to be processed 14 is to be subjected to surface processing.
The upper electrode 28 also serving as a gas supply unit has a rectangular frame 29 corresponding to the substrate 14 to be processed, and a shower in which a large number of gas blowing holes 31 are formed in a substantially uniform arrangement to close the lower opening of the frame 29. The plate 30 and an annular partition wall 32 that divides the inside of the space surrounded by the frame body 29 and the shower plate 30 into two regions inside and outside are integrally formed. A central region gas space portion 33 and a peripheral region gas space portion 34 separated by a partition wall 32 are formed inside the upper electrode 28 and the top surface of the vacuum chamber 1.

A single gas introducing portion 37 for supplying the reaction gas G is provided at the center of the central region gas space 33, and the reaction gas G is supplied to the peripheral region gas space 34. Two gas inlets 38, 39 for supply
Are provided at opposite side positions of the gas introduction section 37, respectively. A gas supply system 6 including a primary valve 8, a mass flow controller (flow rate adjusting unit) 9 and a secondary valve 10 similar to that shown in FIG. 7 is individually connected to each of the gas introduction units 37 to 39. The reaction gas G is supplied from the gas supply source 7.

Therefore, in this vacuum processing apparatus, the inside of the upper electrode 28 is divided into two central region gas spaces 3.
The reaction gas G is separately supplied to the peripheral region gas space 3 and the peripheral region gas space 34, and the opposite side positions of the gas introduction portion 37 of the central region gas space 33 are provided in the peripheral region gas space 34 having a large volume. Since the reaction gas G is supplied from the two gas introduction sections 38 and 39 opposed to each other, a large amount of the reaction gas G is blown out from the gas outlet 4 near the gas introduction section 11 as in the vacuum processing apparatus in FIG. The bias in the distribution of the reaction gas G is significantly reduced.

In addition to the above, three gas introduction sections 37 to 3
The supply amount of the reaction gas G to the gas supply system 9 can be individually and independently adjusted by controlling the respective flow rate adjustment units 9 in the gas supply system 6 individually connected to the pipes. Thereby, the reaction gas G can be dispersed so as to be accurately and uniformly distributed over the entire surface of the substrate 14 to be processed. In addition, when the size of the substrate 14 to be processed and the processing conditions are changed, the reaction gas G is controlled by adjusting and controlling the respective flow rate controllers 9 outside the vacuum chamber 1 without opening and closing the vacuum chamber 1. Can be easily and quickly adjusted to disperse the particles accurately and uniformly over the entire surface of the substrate 14 to be processed.

The measured values of the above effects are shown in the upper electrode 2
8B, the longitudinal dimension C of the rectangular shower plate 30 in plan view is 470 mm, the longitudinal dimension D of the central region gas space 33 is 150 mm, and the peripheral region gas space 34 is The width E in the longitudinal direction is 160 mm,
Using this vacuum processing apparatus, a glass substrate for a liquid crystal display element having an area of 370 mm × 470 mm was dry-etched. At this time, the ratio of the etching depth between the central portion and the peripheral portion of the processed glass substrate could be improved to 1 to 0.8 by adjusting and controlling each of the flow rate adjusting portions 9.

FIG. 2 shows an upper electrode 40 and a lower electrode 18 in a vacuum processing apparatus according to a second embodiment of the present invention.
In this embodiment, a circular substrate 17 is to be surface-treated. In the figure, for convenience of illustration, the upper electrode 40 is placed from below and the lower electrode
Are shown as viewed from above. Upper electrode 4
0 is a small-diameter central electrode portion 40A and a large-diameter peripheral electrode portion 40A.
B is arranged concentrically. Each of the two electrode portions 40A, 40B is in the form of a nozzle in which a number of gas outlets 41, 42 are arranged at regular intervals along the lower surface of an annular pipe.
Each of the electrode portions 1 and 42 has an extremely small diameter of about 0.1 mm to 2 mm, and the electrode portions 40A and 40A are arranged so that the reaction gas G can be evenly distributed over the entire surface of the substrate 17 set on the electrode stage 18a. A large number are arranged at minute intervals in 40B.

Each of the electrode portions 40A and 40B is provided with a gas introduction pipe 4 communicating with two locations facing each other in the radial direction.
3 and 44, which are arranged above the internal space of the vacuum chamber 1 so as to face the lower electrode 18 and supported on the side walls of the vacuum chamber 1 via the gas introduction pipes 43 and 44, respectively. Is done. A gas supply system 6 composed of a primary valve 8, a mass flow controller (flow rate control unit) 9 and a secondary valve 10 is connected to the four gas introduction pipes 43 and 44, respectively. The reaction gas G is supplied from the gas supply system 7 through the individual gas supply systems 6. The reaction gas G is supplied to each electrode section 40
A and 40B are introduced into the internal space of the vacuum chamber 1 through many gas blowing holes 41 and 42.

In the vacuum processing apparatus provided with the upper electrode 40, the reaction gas G is individually supplied to each of two portions of the upper electrode 40 which face the central electrode portion 40A and the peripheral electrode portion 40B in the respective radial directions. Therefore, the bias of the distribution of the reaction gas G caused by blowing out a large amount of the reaction gas G from the gas outlet 21 close to the gas introduction pipe 20 as in the vacuum processing apparatus of FIG. 8 is significantly reduced. In addition to this, the supply amount of the reaction gas G to the four gas introduction pipes 43 and 44 is independently controlled by the control of each flow rate control unit 9 in the gas supply system 6 which is individually connected to these. Can be adjusted.

Thus, the reaction gas G can be dispersed so as to be accurately and uniformly distributed over the entire surface of the disk-shaped substrate 17 to be processed. Moreover, when the diameter of the substrate 17 to be processed and the processing conditions are changed, the vacuum chamber 1
By adjusting and controlling each of the flow rate adjustment units 9 outside the vacuum chamber 1 without opening and closing, it is easy to adjust the reaction gas G to be accurately and uniformly distributed over the entire surface of the substrate 17 to be processed, and Can be done quickly.

The measured values of the above-mentioned effects are shown below.
0 indicates that the inner diameter of the central electrode portion 40A is 100 mm and the outer diameter of the peripheral electrode portion 40B is 300 mm, and the disk processing substrate 17 having a diameter of 300 mm is dry-etched using this vacuum processing apparatus. Surface treatment. At this time, the thickness or etching depth of each of the central portion and the peripheral portion of the processed substrate 17 could be substantially the same.

FIGS. 3A and 3B show an upper electrode 47 in a vacuum processing apparatus according to a third embodiment of the present invention. FIG. 3A is a perspective view seen from below, and FIG. 3B is a perspective view seen from above. It is.

In this embodiment, a circular substrate 17 to be processed is used.
Are subject to surface treatment. In the second embodiment,
The central electrode portion 40A and the peripheral electrode portion 4 each of which has a circular nozzle shape on the upper electrode 40 with respect to the circular substrate 17 to be processed.
However, in the present embodiment, the upper electrode 47 serving also as a gas supply unit is provided on the circular substrate 17 to be processed.
The frame 4 having a circular frame 48 corresponding to the substrate 17 to be processed and a large number of gas blowing holes 50 formed in a substantially uniform arrangement.
8, a shower plate 49 for closing the lower opening, and two annular partition walls 51 for dividing the space formed between the frame body 48 and the shower plate 49 into three concentric circular and annular regions. , 52 are integrally formed. Therefore, two annular partition walls 5 are provided inside the upper electrode 47 and the top surface of the vacuum chamber 1.
A central region gas space portion 54, an intermediate region gas space portion 57, and a peripheral region gas space portion 58 divided by 1 and 52 are formed.

A single gas inlet pipe 59 for supplying the reaction gas G is provided at the center of the central region gas space 54, and the intermediate region gas space 57 and the peripheral region gas space 58 are provided. , Two gas introduction pipes 60 and 61 for supplying the reaction gas G are respectively provided in an arrangement located on the same line passing through the gas introduction pipe 59. A gas supply system 6 composed of a primary valve 8, a mass flow controller (flow rate controller) 9 and a secondary valve 10 similar to that shown in FIG. 2 is individually connected to each of the gas introduction pipes 59 to 61, respectively. The reaction gas G is supplied from the gas supply source 7.

In the vacuum processing apparatus provided with the above-described upper electrode 47, the same effect as that of the second embodiment can be obtained when performing the surface treatment of the circular substrate 17 to be processed. In other words, this vacuum processing apparatus can individually and independently adjust the supply amount of the reaction gas G to the five gas introduction pipes 59 to 61 by controlling the flow rate control unit 9 in each gas supply system 6. Accordingly, the reaction gas G can be dispersed so as to be accurately and uniformly distributed over the entire surface of the circular substrate to be processed 17, and when the diameter of the substrate to be processed 17 and the processing conditions are changed, the vacuum chamber 1 By adjusting and controlling each of the flow rate adjustment units 9 outside the vacuum chamber 1 without opening and closing, it is easy to adjust the reaction gas G to be accurately and uniformly distributed over the entire surface of the substrate 17 to be processed, and Can be done quickly.

FIG. 4 shows an upper electrode 62 having a gas supply section in a vacuum processing apparatus according to a fourth embodiment of the present invention.
FIG. 2 is a perspective view of the embodiment viewed from below.
As in the first embodiment, a rectangular substrate to be processed 14 is subjected to surface treatment. This upper electrode 62
Are formed along the lower surface of the rectangular pipe corresponding to the substrate 14 to be surface-treated.
Nozzle-shaped peripheral electrode portion 6 formed with uniform arrangement 3
A central electrode portion 62B in the form of a nozzle in which a number of gas blowing holes 64 having a small diameter are formed in a uniform arrangement along the lower surface of a pipe communicating in a cross shape is provided inside 2A. I have. A gas introduction pipe 67 extends from the central portion of the central electrode portion 62B so as to communicate therewith.
2A, two opposite sides of the gas introduction pipe 67 are opposed to each other.
Gas introduction pipes 68 extend from the locations in communication with each other. These gas introduction pipes 67 and 68 are connected to a gas supply source 7 via an individual gas supply system 6 similarly to the above embodiments.
Is connected to the piping.

FIG. 5 shows an upper electrode 6 serving also as a gas supply unit in a vacuum processing apparatus according to a fifth embodiment of the present invention.
9 is a perspective view of the substrate 1 as viewed from below. This embodiment is similar to the fourth embodiment, and has a rectangular substrate 1 to be processed.
No. 4 was subjected to the surface treatment. This upper electrode 6
9 is a nozzle-shaped peripheral electrode portion 69A in which a large number of gas outlets 70 having a small diameter are formed in a uniform arrangement along the lower surface of a rectangular pipe corresponding to the substrate 14 to be surface-treated. Inside, there is provided a central electrode portion 69B in the form of a nozzle in which a number of gas blowing holes 71 having a small diameter are formed in a uniform arrangement along the lower surface of a small rectangular pipe similar in shape to the peripheral electrode portion 69A. It is a configuration that is arranged. A gas introduction pipe 72 is connected to and extends from the central electrode 69 </ b> B at two locations facing each other at the center.
9A is provided with the two gas introduction pipes 7 at the center thereof.
Gas introduction pipes 73 extend from two locations facing each other in a direction orthogonal to the arrangement direction of the two. These gas introduction pipes 7
The pipes 2 and 73 are connected to the gas supply source 7 via individual gas supply systems 6 as in the above embodiments.

In each of the vacuum processing apparatuses of the fourth and fifth embodiments, the same effects as those of the first embodiment can be obtained when performing the surface treatment of the rectangular substrate 14 to be processed. . That is, in these vacuum processing apparatuses, the supply amounts of the reaction gas G to the plurality of gas introduction pipes 67, 68, 72, and 73 are individually controlled independently by the control of the flow control unit 9 in each gas supply system 6. In this case, the reactive gas G can be distributed so as to be accurately and evenly distributed over the entire surface of the rectangular substrate 14, and the dimensions and processing conditions of the substrate 14 can be reduced. In the case of a change, the reaction gas G is adjusted and controlled outside the vacuum chamber 1 without opening and closing the vacuum chamber 1 so that the reaction gas G is supplied to the substrate 14 to be processed.
Can be easily and quickly adjusted to distribute accurately and evenly over the entire surface.

FIG. 6 is a schematic vertical sectional view showing the structure of a vacuum processing apparatus according to a sixth embodiment of the present invention. In this embodiment, a rectangular substrate to be processed 14 is subjected to surface processing. The case is illustrated. In the figure, the same or equivalent components as those in FIG. 1A are denoted by the same reference numerals, and the description thereof will be omitted. Only different configurations will be described below. The upper electrode 74 of this vacuum processing apparatus is
A frame 77 in which a rectangular lower frame smaller than this is integrally formed below the rectangular upper frame corresponding to No. 4, and a number of gas outlets 79 are formed in a substantially uniform arrangement. Is formed integrally with a shower plate 78 that closes the opening. In the center of a gas space 80 formed between the upper electrode 74 and the top surface of the vacuum chamber 1, a gas supply source 7, a primary valve 8, a mass flow controller (flow rate controller) 9, and a secondary valve The reaction gas G is supplied from the gas introduction unit 81 through the single gas supply system 6 including 10.

An annular gas outlet wall 82 is provided at a position on the peripheral side wall of the vacuum chamber 1 at an intermediate height between the upper electrode 74 and the lower electrode 13. Inside the gas blowing wall 82, a gas flow path 83 and a number of auxiliary gas blowing holes 84 communicating with the gas flow path 83 and opening into the vacuum chamber 1 are formed. The auxiliary gas outlets 84 have a small diameter and are arranged at equal intervals along the inner peripheral surface of the annular gas outlet wall 82.
A plurality (only one is shown) of gas introduction portions 87 are provided in communication with the gas flow passage 83, and each gas introduction portion 87 has a primary side valve 8 different from the gas introduction portion 81 and a mass flow controller. (Flow control unit) 9 and secondary valve 1
The reaction gas G is supplied through a gas supply system 6 composed of zero. In this vacuum processing apparatus, the reaction gas G introduced into the vacuum chamber 1 from the gas outlet 79 of the upper electrode 74
Is dispersed mainly in the central portion of the substrate 14 to be processed, and the reaction gas G in the peripheral portion of the substrate 14 to be introduced is supplied from the auxiliary gas blowing holes 84 of the gas blowing wall 82. The gas G is dispersed and supplemented.

Therefore, in this vacuum processing apparatus, the gas supply amount supplied to the upper electrode 74 via the gas introduction part 81 and the gas supply amount supplied to the gas flow passage 83 via the gas introduction part 87 are individually determined. Flow controller 9 of gas supply system 6
The reaction gas G is controlled by controlling the
4 can be distributed so as to be accurately and evenly distributed over the entire surface, and when the size of the substrate 14 to be processed and processing conditions are changed, the vacuum chamber 1 can be opened and closed without opening and closing the vacuum chamber 1. By adjusting and controlling each of the flow rate adjusters 9 outside the above, adjustment for dispersing the reaction gas G in an accurate and uniform distribution over the entire surface of the substrate to be processed 14 can be easily and quickly performed.
Further, the vacuum processing apparatus according to the present embodiment can be applied to the vacuum processing chamber 1 and the upper electrode 74 for the circular substrate 17 to be processed.
Needless to say, it can be applied simply by changing the shape of the circle to a circle.

[0046]

As described above, according to the vacuum processing apparatus of the present invention, the other electrode serving also as a gas supply unit for the reaction gas is
Conventionally, a plurality of gas inlets connected to the gas supply source of the reaction gas via individual gas supply systems are arranged in such a way that the reaction gas can be evenly distributed inside the vacuum chamber. The bias of the distribution of the reaction gas due to the blowing of a large amount of the reaction gas from a gas outlet close to a single gas introduction unit such as an apparatus can be remarkably reduced.

[Brief description of the drawings]

FIG. 1 shows a vacuum processing apparatus according to a first embodiment of the present invention, in which (a) is a schematic longitudinal sectional view showing its structure, and (b)
3 is a bottom view of the upper electrode in the device.

FIG. 2 is a perspective view showing an upper electrode and a lower electrode in a vacuum processing apparatus according to a second embodiment of the present invention.

3A and 3B show an upper electrode in a vacuum processing apparatus according to a third embodiment of the present invention, wherein FIG. 3A is a perspective view seen from below, and FIG. 3B is a perspective view seen from above.

FIG. 4 is a perspective view showing an upper electrode in a vacuum processing apparatus according to a fourth embodiment of the present invention, as viewed from below.

FIG. 5 is a perspective view showing an upper electrode in a vacuum processing apparatus according to a fifth embodiment of the present invention, as viewed from below.

FIG. 6 is a schematic longitudinal sectional view showing the structure of a vacuum processing apparatus according to a sixth embodiment of the present invention.

FIG. 7A is a schematic vertical sectional view showing the structure of a conventional vacuum processing apparatus, and FIG. 7B is an explanatory view of a film thickness distribution of a substrate to be processed formed by the processing apparatus.

8A is a schematic longitudinal sectional view showing the structure of another conventional vacuum processing apparatus, FIG. 8B is a perspective view of an upper electrode in the processing apparatus, and FIG. FIG. 3 is an explanatory diagram of a film thickness distribution of a processing substrate.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 6 Gas supply system 7 Gas supply source 9 Flow control part 13,18 Lower electrode (one electrode) 14,17 Substrate to be processed 28,40,47,62,69,74 Upper electrode (other electrode) 30 , 49,78 shower plate 31,41,42,50,63,64,70,71,7
9 Gas outlets 32, 51, 52 Partition walls 33, 54 Central region gas space (gas space) 34, 58 Peripheral region gas space (gas space) 37-39, 81, 87 Gas inlet 40A, 62B, 69B Central electrode section 40B, 62A, 69A Peripheral electrode section 43, 44, 59 to 61, 67, 68, 72, 73 Gas introduction pipe (gas introduction section) 57 Intermediate area gas space section (gas space section) 84 Auxiliary Gas outlet G reactive gas

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) H05H 1/46 H05H 1/46 MF term (Reference) 4K030 EA01 EA05 EA06 FA03 JA05 KA17 LA15 LA18 4K057 DM01 DM02 DM07 DM08 DM37 DN01 DN02 5F004 AA01 BA04 BB11 BB28 5F045 AA08 BB01 BB02 DP01 DP02 DP03 DQ10 EF04 EF05 EH12 EH13 EH14

Claims (5)

[Claims] A vacuum chamber evacuated to a vacuum, one electrode provided inside the vacuum chamber to which a substrate to be processed is attached, and a vacuum chamber disposed in a position opposed to the one electrode. And a second electrode which is provided inside and serves also as a gas supply unit for introducing a reaction gas from a gas outlet into the vacuum chamber, wherein the other electrode is provided with a reaction gas through a separate gas supply system. Multiple gas inlets connected to the gas supply by pipe are
A vacuum processing apparatus provided with an arrangement capable of introducing a reaction gas with an even distribution into the vacuum chamber. 2. The vacuum processing apparatus according to claim 1, wherein the gas supply system has a flow rate control unit that can be controlled independently of each other. 3. The other electrode has a gas space in which a shower plate in which gas discharge holes having a small diameter are formed in a uniform arrangement is arranged on a side facing one of the electrodes.
The inside of this gas space was divided into a plurality of gas space portions by a partition wall, and each gas space portion was provided with a gas introduction portion connected to a gas supply source via an individual gas supply system. The vacuum processing apparatus according to claim 1, wherein the vacuum processing apparatus has a configuration. 4. The other electrode has at least a central electrode portion and a peripheral electrode portion in which gas discharge holes having minute diameters are formed in a uniform arrangement and have a similar annular shape to each other. A part is arranged around the central electrode part with a certain gap therebetween, and each of the electrode parts is provided with a gas introduction part connected to a gas supply source via a separate gas supply system. The vacuum processing apparatus according to claim 1, wherein the vacuum processing apparatus has a configuration. 5. A vacuum chamber whose inside is evacuated to vacuum, one electrode provided inside the vacuum chamber to which a substrate to be processed is attached, and an electrode vertically opposed to said one electrode in an arrangement. The other electrode provided inside the vacuum chamber and also serving as a gas supply unit for introducing a reaction gas into the inside of the vacuum chamber from a gas blowing hole, and a large number of annularly arranged at equal intervals along the side wall of the vacuum chamber. And an auxiliary gas outlet for introducing a reaction gas into the vacuum chamber, wherein the other electrode and the auxiliary gas outlet are provided with individual gas supply paths each having a flow rate control unit. A vacuum processing apparatus, which is connected to a gas supply source via a pipe.