JP2599122B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2599122B2 JP2599122B2 JP60127304A JP12730485A JP2599122B2 JP 2599122 B2 JP2599122 B2 JP 2599122B2 JP 60127304 A JP60127304 A JP 60127304A JP 12730485 A JP12730485 A JP 12730485A JP 2599122 B2 JP2599122 B2 JP 2599122B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor device
- wafer
- organic contaminants
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体ウエハの表面上に薄膜を形成する様
にした半導体装置の製造方法に関するものである。Description: BACKGROUND OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device in which a thin film is formed on a surface of a semiconductor wafer.
本発明は、上記の様な半導体装置の製造方法におい
て、CVD装置による薄膜の形成に先立って、半導体ウエ
ハの表面に付着した有機系の汚染物を、CVD装置の加熱
機構による加熱によって酸素またはオゾンと反応させ灰
化させて除去することによって、膜厚の均一な薄膜を低
コストで形成することができる様にしたものである。According to the present invention, in the method of manufacturing a semiconductor device as described above, prior to the formation of the thin film by the CVD device, the organic contaminants attached to the surface of the semiconductor wafer are removed by oxygen or ozone by heating by the heating mechanism of the CVD device. And ashing to remove them, whereby a thin film having a uniform thickness can be formed at low cost.
半導体ウエハの表面上に薄膜を形成する方法には、幾
つかの種類がある。図面は、そのうちの１つであるCVD
法を行うためのバッチ式CVD装置の概略を示している。There are several types of methods for forming thin films on the surface of a semiconductor wafer. The drawing shows one of them, CVD
1 shows an outline of a batch type CVD apparatus for performing a method.
この様な装置を用いる一従来例では、まず数枚〜十数
枚のSiウエハを反応炉１内へ装填し、この反応炉１を閉
鎖状態にする。そして、反応炉１内の空気を追い出すと
共に反応炉１内を所定の温度にするために、ガス流制御
器２を操作して、不活性ガスであるN2を約40l/分の割合
で約10分間だけ反応炉１内を通過させる。In one conventional example using such an apparatus, first, several to a dozen or more Si wafers are loaded into the reactor 1, and the reactor 1 is closed. Then, in order to a predetermined temperature the reaction furnace 1 with expel air in the reactor 1, by operating the gas flow controller 2, about the N 2 is an inert gas at a rate of about 40 l / min Pass through the reactor 1 for 10 minutes.
そして例えば、リンを不純物として含有するSiO2であ
るPSGの薄膜をSiウエハの表面上に形成する場合は、反
応ガスとしてSiH4、PH3、O2が必要である。しかし、こ
れらの反応ガスを直ちに反応炉１内へ導くのではなく、
反応ガスの流量を安定させるために、バルブの操作等に
よって、反応ガスを約１分間だけ排気路３内を通過させ
る。For example, when a thin film of PSG, which is SiO 2 containing phosphorus as an impurity, is formed on the surface of a Si wafer, SiH 4 , PH 3 , and O 2 are required as reaction gases. However, instead of introducing these reaction gases into the reactor 1 immediately,
In order to stabilize the flow rate of the reaction gas, the reaction gas is passed through the exhaust path 3 for about one minute by operating a valve or the like.
その後、流量が安定した状態の反応ガスを反応炉１内
を通過させて、反応を開始させる。反応が終了すると、
今度は反応炉１内の反応ガスを追い出すために、N2を約
40l/分の割合で約５分間だけ反応炉１内を通過させる。
そして最後に、反応炉１を開放して、表面上に薄膜が形
成されたSiウエハを取り出す。Thereafter, the reaction gas having a stable flow rate is passed through the reaction furnace 1 to start the reaction. When the reaction is over,
Now in order to drive off reaction gas in the reaction furnace 1, the N 2 about
It is passed through the reactor 1 at a rate of 40 l / min for only about 5 minutes.
Finally, the reactor 1 is opened, and the Si wafer having the thin film formed on the surface is taken out.
ところで例えばSiO2膜は、CVD法では形成温度が約400
℃と比較的に低温であるということもあって、その膜厚
の均一性がSiウエハの表面の清浄度に大きく影響され、
特に有機物によって汚染されていると均一性が著しく損
われる。By the way, for example, the SiO 2 film has a formation temperature of about 400 in the CVD method.
Due to the relatively low temperature of ℃, the uniformity of the film thickness is greatly affected by the cleanliness of the surface of the Si wafer,
In particular, uniformity is significantly impaired when contaminated by organic matter.
そして、Siウエハの表面に何らかの有機物があるにも
拘らず、上述の一従来例では何ら適切な処理が行われて
いない。この結果、例えば不純物を含有しないSiO2膜の
様に有機物汚染に特に敏感な薄膜の場合は、15枚のSiウ
エハの膜厚間に約±20％の不均一さがある。In spite of the presence of some organic substances on the surface of the Si wafer, no appropriate processing is performed in the above-described conventional example. As a result, in the case of a thin film that is particularly sensitive to organic contamination, such as a SiO 2 film containing no impurities, there is a non-uniformity of about ± 20% between the film thicknesses of 15 Si wafers.
本発明による半導体装置の製造方法は、半導体ウエハ
の表面に付着した有機系の汚染物を、CVD装置の加熱機
構による加熱によって酸素またはオゾンと反応させるこ
とによって灰化させて除去する工程と、前記有機系の汚
染物が除去された前記半導体ウエハの前記表面上に、前
記CVD装置によって薄膜を形成する工程とを夫々具備し
ている。The method of manufacturing a semiconductor device according to the present invention, the step of removing the organic contaminants attached to the surface of the semiconductor wafer by incineration by reacting with oxygen or ozone by heating by the heating mechanism of the CVD apparatus, and Forming a thin film by the CVD apparatus on the surface of the semiconductor wafer from which organic contaminants have been removed.
本発明による半導体装置の製造方法では、有機系の汚
染物が除去された状態の半導体ウエハの表面上に薄膜が
形成される。In the method of manufacturing a semiconductor device according to the present invention, a thin film is formed on the surface of a semiconductor wafer from which organic contaminants have been removed.
しかも、CVD装置による薄膜の形成に先立つ有機系の
汚染物の除去を、CVD装置の加熱機構による加熱によっ
てこの有機系の汚染物を酸素またはオゾンと反応させる
ことによって灰化させて行っている。このため、薄膜を
形成するために半導体ウエハを装填してあるCVD装置の
加熱機構を加熱状態にすると共にこのCVD装置中へ酸素
またはオゾンを供給するだけでよく、有機系の汚染物を
除去するための専用の装置が不要である。Moreover, the removal of organic contaminants prior to the formation of a thin film by the CVD apparatus is performed by ashing the organic contaminants with oxygen or ozone by heating with a heating mechanism of the CVD apparatus. Therefore, the heating mechanism of the CVD apparatus loaded with a semiconductor wafer to form a thin film need only be heated and oxygen or ozone is supplied into the CVD apparatus to remove organic contaminants. No dedicated device is required.
以下、本発明の一実施例を図面を参照しながら説明す
る。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
本実施例は、Siウエハを反応炉１内へ装填し、不活性
ガスであるN2を約40l/分の割合で約10分間だけ反応炉１
内を通過させる工程において、N2と共にO2またはO3を供
給し、Siウエハの表面に付着した有機系の汚染物をCVD
装置の加熱機構による加熱によってこれらのO2またはO3
と反応させることによって灰化し、灰化物を排ガスと共
に反応炉１から排出することを除いて、既述の一従来例
と実質的に同様の工程を有していてよい。In the present embodiment, a Si wafer is loaded into the reactor 1 and N 2 which is an inert gas is supplied at a rate of about 40 l / min for about 10 minutes.
In the process of passing through the inside, O 2 or O 3 is supplied together with N 2 to remove organic contaminants adhering to the surface of the Si wafer
These O 2 or O 3 are heated by the heating mechanism of the device.
May be substantially the same as the above-described conventional example, except that the ash is discharged from the reaction furnace 1 together with the exhaust gas.
但し、O2またはO3を供給することによってSiウエハの
表面上にSiO2膜が形成されては不都合な場合等がある。
従って、ガス流制御器２の操作等によって、N2の供給と
は独立してO2またはO3の供給を開始または停止すること
ができる様にしてある。However, it may be inconvenient if the SiO 2 film is formed on the surface of the Si wafer by supplying O 2 or O 3 .
Therefore, the supply of O 2 or O 3 can be started or stopped independently of the supply of N 2 by operating the gas flow controller 2 or the like.
そして、本実施例の様な方法で５分間だけO2を供給す
ると、不純物を含有しないSiO2膜を15枚のSiウエハの表
面上に形成した場合、膜厚の不均一さが既述の約±20％
から約±10％へ改善された。Then, when O 2 is supplied for 5 minutes by the method as in the present embodiment, when the SiO 2 film containing no impurities is formed on the surface of 15 Si wafers, the non-uniformity of the film thickness is as described above. About ± 20%
To about ± 10%.
本発明による半導体装置の製造方法では、有機系の汚
染物が除去された状態の半導体ウエハの表面上に薄膜が
形成される。従って、薄膜の形成速度が均一であり、そ
の結果、膜厚の均一な薄膜が形成される。In the method of manufacturing a semiconductor device according to the present invention, a thin film is formed on the surface of a semiconductor wafer from which organic contaminants have been removed. Therefore, the formation rate of the thin film is uniform, and as a result, a thin film having a uniform thickness is formed.
しかも、有機系の汚染物を除去するための専用の装置
が不要であるので、膜厚の均一な薄膜を低コストで形成
することができる。Moreover, since a dedicated device for removing organic contaminants is not required, a thin film having a uniform thickness can be formed at low cost.
図面は本発明の一実施例を実施するための装置を示す概
略図である。The drawings are schematic diagrams showing an apparatus for carrying out an embodiment of the present invention.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 古川 悦子 東京都品川区北品川６丁目７番35号 ソ ニー株式会社内 (56)参考文献 特開 昭60−57937（ＪＰ，Ａ) 特開 昭51−43079（ＪＰ，Ａ) 特公 昭55−37093（ＪＰ，Ｂ２) ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Etsuko Furukawa 6-7-35 Kita Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (56) References JP-A-60-57937 (JP, A) JP-A Sho 51-43079 (JP, A) JP-B 55-37093 (JP, B2)
Claims (1)
染物を、CVD装置の加熱機構による加熱によって酸素ま
たはオゾンと反応させることによって灰化させて除去す
る工程と、 前記有機系の汚染物が除去された前記半導体ウエハの前
記表面上に、前記CVD装置によって薄膜を形成する工程
と を夫々具備する半導体装置の製造方法。A step of removing organic contaminants attached to the surface of a semiconductor wafer by incineration by reacting with oxygen or ozone by heating by a heating mechanism of a CVD apparatus; and Forming a thin film by the CVD apparatus on the surface of the semiconductor wafer from which the semiconductor device has been removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60127304A JP2599122B2 (en) | 1985-06-10 | 1985-06-10 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60127304A JP2599122B2 (en) | 1985-06-10 | 1985-06-10 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61284925A JPS61284925A (en) | 1986-12-15 |
| JP2599122B2 true JP2599122B2 (en) | 1997-04-09 |
Family
ID=14956637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60127304A Expired - Lifetime JP2599122B2 (en) | 1985-06-10 | 1985-06-10 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2599122B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1351283A4 (en) * | 2000-12-05 | 2006-01-25 | Tokyo Electron Ltd | Method and apparatus for treating article to be treated |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5547952B2 (en) * | 1971-12-29 | 1980-12-03 | ||
| JPS5143079A (en) * | 1974-10-11 | 1976-04-13 | Hitachi Ltd | TAISHOKUSEIJUSHIMAKUJOKYOHO |
| JPS6057937A (en) * | 1983-09-09 | 1985-04-03 | Ushio Inc | Ultraviolet washing method |
-
1985
- 1985-06-10 JP JP60127304A patent/JP2599122B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61284925A (en) | 1986-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |