JPS5821173Y2 - Furnace tube - Google Patents

Furnace tube

Info

Publication number
JPS5821173Y2
JPS5821173Y2 JP12385976U JP12385976U JPS5821173Y2 JP S5821173 Y2 JPS5821173 Y2 JP S5821173Y2 JP 12385976 U JP12385976 U JP 12385976U JP 12385976 U JP12385976 U JP 12385976U JP S5821173 Y2 JPS5821173 Y2 JP S5821173Y2
Authority
JP
Japan
Prior art keywords
gas
reactor
furnace
reaction
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12385976U
Other languages
Japanese (ja)
Other versions
JPS5341061U (en
Inventor
一文 小川
Original Assignee
松下電器産業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 松下電器産業株式会社 filed Critical 松下電器産業株式会社
Priority to JP12385976U priority Critical patent/JPS5821173Y2/en
Publication of JPS5341061U publication Critical patent/JPS5341061U/ja
Application granted granted Critical
Publication of JPS5821173Y2 publication Critical patent/JPS5821173Y2/en
Expired legal-status Critical Current

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  • Heat Treatments In General, Especially Conveying And Cooling (AREA)

Description

【考案の詳細な説明】 本考案は反応ガス等の導かれる炉心管に関し、半導体装
置等の製造に適した炉心管の構造を提案するものである
[Detailed Description of the Invention] The present invention relates to a reactor core tube through which reactive gases and the like are guided, and proposes a structure of the reactor core tube suitable for manufacturing semiconductor devices and the like.

まず、第1図に従来の半導体素子製作用拡散炉の要部構
造を示す。
First, FIG. 1 shows the main structure of a conventional diffusion furnace for manufacturing semiconductor devices.

1はガス導入管、2は反応炉、3は発熱コイル、4は半
導体ウェハである。
1 is a gas introduction pipe, 2 is a reaction furnace, 3 is a heating coil, and 4 is a semiconductor wafer.

さて第1図の拡散炉にてガス導入管1より反応炉2内に
ガスを導入し発熱コイル3で熱すれば炉内に複数個のウ
ェハ4などの反応させたい物体を置いた場合、各物体に
対してどうしてもガスが均一に拡散してゆかない。
Now, in the diffusion furnace shown in Fig. 1, gas is introduced into the reaction furnace 2 through the gas introduction pipe 1 and heated by the heating coil 3. Gas cannot be uniformly diffused into an object.

また、反応速度の速いガスであれば、反応物体に触れる
に従ってガス濃度は薄くなり、入口と出口では、反応が
不均一となる。
Furthermore, if the gas has a high reaction rate, the gas concentration will decrease as it comes into contact with the reactant, and the reaction will be non-uniform at the inlet and outlet.

またガス入口部分にファンをつけてガス拡散を行なうも
のでも、ガスが回転しながら入って行くだけで、入口と
出口の反応ガス濃度の均一化にはあまり寄与しはいばか
りでなく、ファンの機械的動作によりホコリ等を生じさ
せる原因になる。
In addition, even if a fan is attached to the gas inlet to diffuse gas, the gas only rotates as it enters, which does not contribute much to equalizing the concentration of the reactant gas at the inlet and outlet, and the fan's mechanical This may cause dust, etc. to be generated due to manual operation.

更に炉壁に多数の導入口を付けても均一な拡散には不充
分で製作上困難で実用に供しない。
Furthermore, even if a large number of inlets are provided on the furnace wall, it is insufficient for uniform diffusion, making it difficult to manufacture and not practical.

そこで、本考案は以上の問題に鑑み、一本の導入管を用
いて、炉内どの部分もガス濃度が均一で、しかも反応む
らの少ない、反応ガス用の炉心管を提供するもので、以
下本考案の一実施例にかかる半導体素子製作用の拡散炉
の要部を示すものである。
Therefore, in view of the above problems, the present invention provides a reactor core tube for reactant gas that uses a single inlet tube, has a uniform gas concentration throughout the furnace, and has less uneven reaction. 1 shows the main parts of a diffusion furnace for manufacturing semiconductor devices according to an embodiment of the present invention.

第2,3図に示すごとく、発熱コイル13により熱せら
れる反応炉12に接続されたガス導入管11にはライフ
ル部15及び導入管11より径が小さい出口部16が設
けられている。
As shown in FIGS. 2 and 3, the gas introduction tube 11 connected to the reactor 12 heated by the heating coil 13 is provided with a rifle section 15 and an outlet section 16 having a smaller diameter than the introduction tube 11.

第3図は第2図のAB線断面図である。FIG. 3 is a sectional view taken along line AB in FIG. 2.

まず反応炉12にウェハ14を図の様に並べて置き、コ
イル13により反応炉12を熱しながらガスをガス導入
管11により供給する。
First, wafers 14 are placed in a reactor 12 as shown in the figure, and gas is supplied through a gas introduction pipe 11 while the reactor 12 is heated by a coil 13.

この場合ガス導入管11を通ったガスはライフル部15
によりうず巻状に回転され、反応炉12の管壁より中心
に向って回転しながら反応炉12の出口に向って進行し
反応ガスの濃度を均一にすることができる。
In this case, the gas passing through the gas introduction pipe 11 is transferred to the rifle section 15.
The reactor 12 is rotated in a spiral shape, rotates from the tube wall of the reactor 12 toward the center, and advances toward the outlet of the reactor 12, thereby making it possible to make the concentration of the reactant gas uniform.

またさらにガス導入管11の出口部16を図のように少
し細くすることにより反応炉12のガス入口で急に拡散
するのでガス反応炉12人口附近の管壁にまで充分床が
り、反応炉12内の管壁に近い部分のガス流速が速くな
り、中心部はもとのままの流速となる。
Further, by making the outlet part 16 of the gas introduction pipe 11 a little thinner as shown in the figure, the gas suddenly diffuses at the inlet of the reactor 12, so that the gas is sufficiently spread to the pipe wall near the gas reactor 12 population, and the reactor 12 The gas flow velocity becomes faster in the inner part near the pipe wall, and the flow velocity remains the same in the center.

以上のようにウェハ14があっても、反応炉12の入口
と出口付辺の反応ガス濃度の差異が少なくなリウエハ1
4上の反応が均一に進むことになる。
As described above, even if there is a wafer 14, the rewafer 1 has a small difference in reaction gas concentration between the inlet and the outlet of the reactor 12.
The reaction above will proceed uniformly.

なお、本考案は拡散炉に限らず、あらゆるガス反応装置
に適用できることはいうまでもない。
It goes without saying that the present invention is applicable not only to diffusion furnaces but also to any gas reaction apparatus.

以上のように本考案によれば炉内に障害物を置いたり炉
自体に手を加えることなく、導入管そのものを工夫する
ことによりガスをくまなく拡散しながら炉内に吹き込み
、炉内の物体をより均一に反応させることができる。
As described above, according to the present invention, without placing obstacles in the furnace or modifying the furnace itself, by devising the introduction pipe itself, gas can be blown into the furnace while being diffused throughout, and objects inside the furnace can be blown into the furnace. can be reacted more uniformly.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の半導体素子製作用の拡散炉の要部構造図
、第2図は本考案の一実施例にかかる同拡散炉の要部構
造図、第3図は第2図のA断面図である。 B線 11・・・・・・ガス導入管、12・・・・・・反応炉
、15・・・・・・ライフル部、16・・・・・・出口
部。
Fig. 1 is a structural diagram of the main parts of a conventional diffusion furnace for manufacturing semiconductor devices, Fig. 2 is a structural diagram of main parts of the same diffusion furnace according to an embodiment of the present invention, and Fig. 3 is a section A of Fig. 2. It is a diagram. B line 11... Gas introduction pipe, 12... Reactor, 15... Rifle part, 16... Outlet part.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ガスを導入する導入管と、反応物を反応させる反応炉と
を備え、前記導入管の内壁に螺旋状の溝を設けてなる炉
心管。
A furnace core tube comprising an introduction tube for introducing gas and a reactor for reacting reactants, the introduction tube having a spiral groove on its inner wall.
JP12385976U 1976-09-14 1976-09-14 Furnace tube Expired JPS5821173Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12385976U JPS5821173Y2 (en) 1976-09-14 1976-09-14 Furnace tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12385976U JPS5821173Y2 (en) 1976-09-14 1976-09-14 Furnace tube

Publications (2)

Publication Number Publication Date
JPS5341061U JPS5341061U (en) 1978-04-10
JPS5821173Y2 true JPS5821173Y2 (en) 1983-05-04

Family

ID=28733272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12385976U Expired JPS5821173Y2 (en) 1976-09-14 1976-09-14 Furnace tube

Country Status (1)

Country Link
JP (1) JPS5821173Y2 (en)

Also Published As

Publication number Publication date
JPS5341061U (en) 1978-04-10

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