JPS62109314A - Manufacture of semiconductor - Google Patents

Abstract

PURPOSE:To improve a thermal radiation efficiency by providing projecting strips on the inner wall surface of a furnace core tube to increase the surface area of the inner wall surface. CONSTITUTION:Since projecting strips 4 are formed on the inner wall surface of a furnace core tube 2, the surface area of the inner wall increases. After heated by a heater 3 to a predetermined temperature, gas of a predetermined flow rate is fed from an inlet into the tube, reacted with a semiconductor sub strate, then fed out of the tube, and exhausted to a duct. The temperature in the tube 2 is held at a predetermined value by the strips 4 in the tube 2 at this time to improve thermal uniformity.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and particularly to a semiconductor manufacturing equipment with improved thermal controllability.

[Conventional technology]

The main part of the SiC core tube used in conventional oxidation and diffusion furnaces is cylindrical, and the inside is also smooth.

A t-diffusion furnace using such a conventional SiC reaction tube is the third
As shown in the figure, a gas inlet (1) is connected to the gas inlet (1) and is made of SiC (silicon carbide).
It consists of a furnace core tube (2) and a heater (3) that surrounds both ends and the center of the furnace core tube (2) and heats the furnace core tube (2) to a predetermined temperature. The reactant gas is passed through the furnace tube (2) while maintaining a constant flow 1, and the furnace temperature of the heater (3) is controlled to perform heat treatment on a semiconductor substrate (not shown). The gas after the reaction then exits the core g and is exhausted into a duct (not shown).

[Problems that the invention aims to solve] As described above, conventional semiconductor manufacturing equipment has a groove bottom, so when the temperature is raised or lowered, it does not reach a predetermined temperature inside the furnace.
It took a certain amount of time for ζ to become uniform, and there was also a problem in uniform distribution of heat during heat treatment.

This invention was made to solve the problems of the conventional ones as described above, and its purpose is to reach a predetermined temperature in a short time.

[Top means to solve the problem]

The semiconductor manufacturing apparatus according to the present invention has a protrusion on the inner wall surface of the furnace tube.

Effect] The surface area of the furnace tube according to the present invention is increased by the convex stripes on the inner wall surface, and the heat radiation efficiency is increased.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a three-dimensional diagram showing an embodiment of the present invention. In the figure, the same reference numerals as in FIG. 31 represent corresponding parts, and their explanation will be omitted. In the figure, (4) is a convex shape that is attached to the inner wall surface of the core tube and expands the surface area of the inner wall surface.

After reaching a predetermined temperature from the heater (3) I, a constant flow of gas enters the tube from the inlet and reacts with a semiconductor substrate (not shown), and after one hour the gas flows out of the tube and is exhausted to a duct (not shown). At this time, the temperature inside the furnace core tube (2) is maintained at a predetermined temperature with good controllability by the ridges (4) inside the furnace core tube (2), and the uniformity of heat is improved.

Fig. 2 shows another embodiment of the present invention, in which a convex strip (4) is attached in a linear manner to the inner wall surface of the core tube (2) to achieve the same effect as the above embodiment. Note that the protruding strip (4) may be provided in an annular shape on the inner wall surface.

In the above embodiment, the explanation was made regarding the uniformity of heat, but the effect of making the inflowing gas uniform is also achieved.

(Effects of the Invention) As described above, this invention has the effect of shortening the time it takes to reach a predetermined temperature within the core tube, since the protrusions are provided on the inner wall surface of the core tube.

[Brief explanation of drawings]

@Figure 1 is a three-dimensional diagram showing a semiconductor manufacturing device according to one embodiment of the present invention, FIG. 2 is a three-dimensional diagram showing a semiconductor manufacturing device according to another embodiment, and FIG. 8 is a three-dimensional diagram showing a conventional semiconductor manufacturing device. be. (2) is a reaction tube, (3) is a heater, and (4) is a convex strip. In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (4)

[Claims] (1) A semiconductor manufacturing device comprising a furnace core tube for heat-treating a semiconductor substrate and a heating means provided on the outer periphery of the furnace core tube, characterized in that a protrusion is provided in the inner wall surface of the furnace core tube. . (2) The semiconductor manufacturing apparatus according to claim 1, wherein the protruding strip is provided on the inner wall of the furnace core tube in the generatrix direction. (3) The semiconductor manufacturing apparatus according to claim 1, wherein the protruding strip is provided in an annular shape on the circumference of the inner wall of the furnace tube. (4) The semiconductor manufacturing apparatus according to claim 1, wherein the protruding stripes are provided in a linear shape on the inner wall of the furnace tube.