JPS60250637A - Thermal oxide heating furnace of semiconductor substrate - Google Patents

Abstract

PURPOSE:To uniformly thermally oxidize a circular Si wafer by providing a heater for performing shape radiation heating matched to spherical radiation or wafer shape. CONSTITUTION:O2 is fed from a nozzle 12 of a bell-jar 11, heated by a heater 13 out of the jar, a jig 14 is elevationally moved to oxidize an Si wafer 15 on the jig. At this time, when the shape of a radiation heater is matched to sphere or the shape of the wafer, even the wafer of large diameter can be uniformly and efficiently oxidized and heat-treated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to the structure of a thermal oxidation/heat treatment furnace for beef conductors.

[Prior art]

Conventionally, a thermal oxidation/heat treatment furnace for semiconductor wafers has had a structure as shown in FIG. That is, a nozzle 2 for introducing oxidizing gas or annealing gas is attached to the quartz tube 1, a Kanthal heater 3 is provided around the quartz tube 1, and a quartz jig 4 and a quartz jig 4 are installed in the quartz tube 1. , a large number of Si wafers 5 placed on the quartz jig 4 are placed, and the Si
It was customary to subject the wafers to a thermal acid rinsing or annealing process.

However, according to the above-mentioned conventional technology, uniform oxidation has become impossible due to an increase in the number of S1 wafers to be processed and an increase in the diameter.

〔the purpose〕

The present invention eliminates the drawbacks of the prior art and provides a thermal oxidation process that enables uniform thermal oxidation and heat treatment of circular Si wafers.
The purpose is to provide a structure for a heat treatment furnace.

〔overview〕

The basic structure of the present invention to achieve the above object is related to thermal oxidation of semiconductor substrates and heating furnaces, and in which the surface of the semiconductor wafer is subjected to spherical radiation or shaped objects in the furnace for thermal oxidation or annealing of semiconductor wafers. It is characterized by comprising a heating body that heats by radiation heating.

〔Example〕

Hereinafter, the present invention will be explained in detail with reference to Examples.

FIG. 2 is a structural diagram of a Si wafer thermal oxidation furnace showing an embodiment of the present invention. That is, an oxidizing gas introduction nozzle 12 is attached to the quartz Pelger 11, a Kanthal heater 13 is provided outside the quartz Pelger 11, and a quartz jig 1 that moves up and down is installed inside the quartz Pelger 11.
4 and the Si wafer 15 placed thereon are placed, and the surface of the Si wafer 15 is oxidized.

〔effect〕

As mentioned above, even large-diameter wafers can be uniformly and efficiently oxidized by heating the Si wafer using spherical radiation or shape radiation that matches the shape of the wafer so that the surface of the Si wafer can be heated uniformly. This has the effect of As shown in FIG. 2, the temperature profile of heating and cooling can also be controlled by a combination of sphere heating and quartz tube heating.

[Brief explanation of drawings]

FIG. 1 is a structural diagram of a Si wafer oxidation furnace according to the prior art, and FIG. 2 is a structural diagram of a Si wafer oxidation furnace showing an embodiment of the present invention. 1... Quartz tube 11... Quartz Pelger 2.12... Gas nozzle 3.13... Kanthal heater 4.14... Quartz jig 5, 1 5... 81 Ue-No. 1 and above
Applicant: Suwa Seikosha Co., Ltd.

Claims (1)

[Claims] 1. A thermal oxidation/heating furnace for semiconductor substrates, the furnace for thermally oxidizing or annealing semiconductor wafers, comprising a heating element for heating the surface of the semiconductor wafer by spherical radiation or shaped radiation heating.