JPH06104198A - Lamp annealing system - Google Patents

Lamp annealing system

Info

Publication number
JPH06104198A
JPH06104198A JP24966792A JP24966792A JPH06104198A JP H06104198 A JPH06104198 A JP H06104198A JP 24966792 A JP24966792 A JP 24966792A JP 24966792 A JP24966792 A JP 24966792A JP H06104198 A JPH06104198 A JP H06104198A
Authority
JP
Japan
Prior art keywords
chamber
wafer
heating
reaction gas
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24966792A
Other languages
Japanese (ja)
Inventor
Katsutoshi Ishizaki
勝敏 石崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP24966792A priority Critical patent/JPH06104198A/en
Publication of JPH06104198A publication Critical patent/JPH06104198A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a sample processed without a variation in electric characteristics in an anneal lamp system, by preventing a variation in thermal treatment at a wafer face, in which a reactive gas at a room temperature causes a heated wafer to be cooled in a chamber. CONSTITUTION:Before a heat-treatment reactive gas is supplied to a chamber 5, the reactive gas is passed through a gas heating chamber 9 at a temperature controlled by a heater 8, a temperature controller 11, and a thermocouple 10 so that the reactive gas is heated up to or near to a given temperature. Then, even when the reactive gas reaches the wafer 4 heated in the chamber 5, the reactive gas doesn't cause the wafer 4 to be cooled. Consequently, a uniform distribution in temperature at the wafer 4 and a uniform amount of heat treatment can be realized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はランプアニール装置に関
し、特にウェーハの反応気体処理に使用するランプアニ
ール装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lamp annealing apparatus, and more particularly to a lamp annealing apparatus used for processing a reactive gas on a wafer.

【0002】[0002]

【従来の技術】従来のランプアニール装置は、図2に示
す様に、ウェーハ4を処理するためのチャンバ5とウェ
ーハ4をチャンバ5内で支持するウェーハ支持治具3と
ウェーハ4を加熱するための加熱用ランプ2とチャンバ
と配管接続治具6によって反応気体供給装置1を有して
いる。
2. Description of the Related Art As shown in FIG. 2, a conventional lamp annealing apparatus heats a chamber 5 for processing a wafer 4, a wafer supporting jig 3 for supporting the wafer 4 in the chamber 5, and a wafer 4. The reaction gas supply device 1 includes the heating lamp 2, the chamber, and the pipe connection jig 6.

【0003】ウェーハ4は、ウェーハ支持治具3によっ
てチャンバ5内に支持された状態で加熱用ランプ2によ
って所定の温度まで5〜20秒の短時間で加熱される。
反応気体は、反応気体供給装置1よりチャンバ5に供給
され、加熱されたウェーハ4に達し反応する構造になっ
ている。この場合、供給される反応気体の温度は20〜
25℃で室温状態である。
The wafer 4 is heated to a predetermined temperature by the heating lamp 2 in a short time of 5 to 20 seconds while being supported in the chamber 5 by the wafer supporting jig 3.
The reaction gas is supplied from the reaction gas supply device 1 to the chamber 5 and reaches the heated wafer 4 to react therewith. In this case, the temperature of the reaction gas supplied is 20 to
At room temperature at 25 ° C.

【0004】[0004]

【発明が解決しようとする課題】この従来のランプアニ
ール装置では、ウェーハの加熱が5〜20秒と短時間で
あること、また、加熱方式がランプ加熱方式であるこ
と、更に、チャンバ容積が10〜20lと小さいこと等
により、20〜25℃の室温状態でチャンバに供給され
た反応気体は、ウェーハに到達するまでに、加熱されず
室温状態でウェーハと接触する。そのため、ウェーハは
部分的に冷却されウェーハ面内の温度分布に40〜80
℃のばらつきが生じ、ウェーハ面内の熱処理量が不均一
となり製品の電気的特性にばらつき等の悪影響を与える
という問題点があった。
In this conventional lamp annealing apparatus, the heating of the wafer is as short as 5 to 20 seconds, the heating method is the lamp heating method, and the chamber volume is 10 The reaction gas supplied to the chamber in the room temperature state of 20 to 25 ° C. is not heated and contacts the wafer in the room temperature state by the time it reaches the wafer because it is as small as ˜20 l. Therefore, the wafer is partially cooled, and the temperature distribution in the wafer surface is 40-80%.
There is a problem that variations in temperature occur and the amount of heat treatment on the wafer surface becomes non-uniform, which adversely affects variations in the electrical characteristics of the product.

【0005】本発明の目的は、ウェーハ面内の熱処理量
が均一で、ばらつきのない製品の電気的特性が得られる
ランプアニール装置を提供することにある。
An object of the present invention is to provide a lamp anneal device which can obtain uniform electrical characteristics of a product with a uniform amount of heat treatment in the wafer surface.

【0006】[0006]

【課題を解決するための手段】本発明は、ウェーハを加
熱処理するチャンバと、該チャンバ内で前記ウェーハを
支持するウェーハ支持治具と、前記チャンバを加熱する
加熱用ランプと、前記チャンバに反応気体を供給する反
応気体供給装置と、該反応気体供給装置と前記チャンバ
を接続する配管接続治具とを有するランプアニール装置
において、前記反応ガス供給装置と前記チャンバとの間
に前記反応ガスを加熱する反応気体加熱機構を備える。
該反応気体加熱機構は、気体加熱室と、該気体加熱室の
外周に配置された加熱保護装置と、しゃへい治具と、該
しゃへい治具と前記加熱保護装置によって断熱しゃへい
されたヒータと、前記気体加熱室の温度を制御する温度
制御装置とを含んで構成されている。
According to the present invention, a chamber for heating a wafer, a wafer supporting jig for supporting the wafer in the chamber, a heating lamp for heating the chamber, and a reaction for the chamber. In a lamp annealing device having a reaction gas supply device for supplying a gas and a pipe connecting jig for connecting the reaction gas supply device and the chamber, the reaction gas is heated between the reaction gas supply device and the chamber. A reaction gas heating mechanism is provided.
The reaction gas heating mechanism includes a gas heating chamber, a heating protection device arranged on the outer periphery of the gas heating chamber, a shielding jig, a heater insulated and shielded by the shielding jig and the heating protection device, and And a temperature control device that controls the temperature of the gas heating chamber.

【0007】[0007]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。
Embodiments of the present invention will now be described with reference to the drawings.

【0008】図1は本発明の一実施例の反応気体供給部
の模式的断面図である。
FIG. 1 is a schematic sectional view of a reaction gas supply unit according to an embodiment of the present invention.

【0009】図1に示す様に、反応気体供給装置1より
配管を通して転送されるウェーハ処理時に使用する反応
気体は、20〜25℃の室温近傍又はそれ以下の温度状
態で気体加熱室9へ転送される。気体加熱室9は、加熱
室保護装置7としゃへい治具13により断熱しゃへいさ
れ、ヒータ8によって加熱されるが、ヒータ用熱電対1
0によりヒータ8の温度を検出し、温度制御装置11で
設定された温度に維持されている。気体加熱室9へ転送
された反応気体は、加熱温調された気体加熱室9内を通
過する間に所定の温度又はその温度近傍まで加熱されて
チャンバ5に転送される。
As shown in FIG. 1, the reaction gas used for wafer processing transferred from the reaction gas supply device 1 through the pipe is transferred to the gas heating chamber 9 at a temperature near room temperature of 20 to 25 ° C. or lower. To be done. The gas heating chamber 9 is adiabatically shielded by the heating chamber protection device 7 and the shielding jig 13 and heated by the heater 8, but the heater thermocouple 1
The temperature of the heater 8 is detected by 0 and is maintained at the temperature set by the temperature control device 11. The reaction gas transferred to the gas heating chamber 9 is heated to a predetermined temperature or the vicinity thereof while passing through the inside of the gas heating chamber 9 whose heating temperature is controlled, and transferred to the chamber 5.

【0010】チャンバ5では、ウェーハ支持治具3で支
持されたウェーハ4が加熱用ランプ2により加熱処理さ
れている。転送された反応気体は、加熱されたウェーハ
4と同等の温度であるので、ウェーハ4は部分的に冷却
されることなくウェーハ4面内の温度分布を維持するこ
とが出来る。
In the chamber 5, the wafer 4 supported by the wafer supporting jig 3 is heated by the heating lamp 2. Since the transferred reaction gas has the same temperature as that of the heated wafer 4, the wafer 4 can maintain the temperature distribution in the plane of the wafer 4 without being partially cooled.

【0011】[0011]

【発明の効果】以上説明した様に本発明は、ランプアニ
ール装置のウェーハ処理時に使用する反応気体をチャン
バに転送する前に反応気体加熱機構により加熱すること
により、チャンバ内で加熱用ランプにより加熱されたウ
ェーハが反応気体によって部分的に冷却されることがな
いので、ウェーハの面内温度分布を均一に維持出来る。
As described above, according to the present invention, the reaction gas used in the wafer processing of the lamp annealing apparatus is heated by the reaction gas heating mechanism before being transferred to the chamber, so that the heating is performed by the heating lamp in the chamber. Since the formed wafer is not partially cooled by the reaction gas, the in-plane temperature distribution of the wafer can be maintained uniform.

【0012】したがって、ウェーハ面内の熱処理量が均
一となり製品の電気的特性のばらつきをなくすことが出
来るという効果がある。
Therefore, there is an effect that the amount of heat treatment on the wafer surface becomes uniform and the variation in the electrical characteristics of the product can be eliminated.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の反応気体供給部の模式的断
面図である。
FIG. 1 is a schematic cross-sectional view of a reaction gas supply unit according to an embodiment of the present invention.

【図2】従来のランプアニール装置の反応気体供給部の
一例の模式的断面図である。
FIG. 2 is a schematic cross-sectional view of an example of a reactive gas supply unit of a conventional lamp annealing device.

【符号の説明】[Explanation of symbols]

1 反応気体供給装置 2 加熱用ランプ 3 ウェーハ支持治具 4 ウェーハ 5 チャンバ 6 配管接続治具 7 加熱室保護装置 8 ヒータ 9 気体加熱室 10 ヒータ用熱電対 11 温度制御装置 12 ヒータ用電力供給装置 13 しゃへい治具 1 Reactive Gas Supply Device 2 Heating Lamp 3 Wafer Support Jig 4 Wafer 5 Chamber 6 Piping Connection Jig 7 Heating Chamber Protective Device 8 Heater 9 Gas Heating Chamber 10 Heater Thermocouple 11 Temperature Control Device 12 Heater Power Supply Device 13 Shield jig

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ウェーハを加熱処理するチャンバと、該
チャンバ内で前記ウェーハを支持するウェーハ支持治具
と、前記チャンバを加熱する加熱用ランプと、前記チャ
ンバに反応気体を供給する反応気体供給装置と、該反応
気体供給装置と前記チャンバを接続する配管接続治具と
を有するランプアニール装置において、前記反応ガス供
給装置と前記チャンバとの間に前記反応ガスを加熱する
反応気体加熱機構を備えたことを特徴とするランプアニ
ール装置。
1. A chamber for heat-treating a wafer, a wafer supporting jig for supporting the wafer in the chamber, a heating lamp for heating the chamber, and a reaction gas supply device for supplying a reaction gas to the chamber. And a lamp annealing device having a pipe connecting jig for connecting the reaction gas supply device and the chamber, and a reaction gas heating mechanism for heating the reaction gas between the reaction gas supply device and the chamber. A lamp annealing device characterized by the above.
【請求項2】 前記反応気体加熱機構が、気体加熱室
と、該気体加熱室の外周に配置された加熱保護装置と、
しゃへい治具と、該しゃへい治具と前記加熱保護装置に
よって断熱しゃへいされたヒータと、前記気体加熱室の
温度を制御する温度制御装置とを含んで構成されている
ことを特徴とする請求項1記載のランプアニール装置。
2. The reaction gas heating mechanism, a gas heating chamber, a heating protection device arranged on the outer periphery of the gas heating chamber,
2. A shield jig, a heater insulated and shielded by the shield jig and the heating protection device, and a temperature control device for controlling the temperature of the gas heating chamber. The described lamp annealing device.
JP24966792A 1992-09-18 1992-09-18 Lamp annealing system Pending JPH06104198A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24966792A JPH06104198A (en) 1992-09-18 1992-09-18 Lamp annealing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24966792A JPH06104198A (en) 1992-09-18 1992-09-18 Lamp annealing system

Publications (1)

Publication Number Publication Date
JPH06104198A true JPH06104198A (en) 1994-04-15

Family

ID=17196424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24966792A Pending JPH06104198A (en) 1992-09-18 1992-09-18 Lamp annealing system

Country Status (1)

Country Link
JP (1) JPH06104198A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114741A (en) * 1990-09-05 1992-04-15 Nippon Shokubai Co Ltd Preparation of water-absorbing polymer composite
JPH04114739A (en) * 1990-09-05 1992-04-15 Nippon Shokubai Co Ltd Preparation of water-absorbing composite
JPH04114738A (en) * 1990-09-05 1992-04-15 Nippon Shokubai Co Ltd Preparation of water-absorbing composite
KR19990082844A (en) * 1998-04-02 1999-11-25 가네꼬 히사시 Lamp Annealing And Method For Annealing Semiconductor Wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202924A (en) * 1987-02-18 1988-08-22 Mitsubishi Electric Corp Rapid heating equipment for manufacturing semiconductor device
JPH0324720A (en) * 1989-06-22 1991-02-01 Toshiba Corp Wafer processing method and processing equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202924A (en) * 1987-02-18 1988-08-22 Mitsubishi Electric Corp Rapid heating equipment for manufacturing semiconductor device
JPH0324720A (en) * 1989-06-22 1991-02-01 Toshiba Corp Wafer processing method and processing equipment

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114741A (en) * 1990-09-05 1992-04-15 Nippon Shokubai Co Ltd Preparation of water-absorbing polymer composite
JPH04114739A (en) * 1990-09-05 1992-04-15 Nippon Shokubai Co Ltd Preparation of water-absorbing composite
JPH04114738A (en) * 1990-09-05 1992-04-15 Nippon Shokubai Co Ltd Preparation of water-absorbing composite
JPH0698306B2 (en) * 1990-09-05 1994-12-07 株式会社日本触媒 Manufacturing method of water-absorbent composite
JPH0698307B2 (en) * 1990-09-05 1994-12-07 株式会社日本触媒 Method for producing water-absorbent composite
JPH06104199B2 (en) * 1990-09-05 1994-12-21 株式会社日本触媒 Method for producing water-absorbent polymer composite
KR19990082844A (en) * 1998-04-02 1999-11-25 가네꼬 히사시 Lamp Annealing And Method For Annealing Semiconductor Wafer

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Effective date: 19980623