JPH06104198A - Lamp annealing system - Google Patents

Abstract

PURPOSE:To provide a sample processed without a variation in electric characteristics in an anneal lamp system, by preventing a variation in thermal treatment at a wafer face, in which a reactive gas at a room temperature causes a heated wafer to be cooled in a chamber. CONSTITUTION:Before a heat-treatment reactive gas is supplied to a chamber 5, the reactive gas is passed through a gas heating chamber 9 at a temperature controlled by a heater 8, a temperature controller 11, and a thermocouple 10 so that the reactive gas is heated up to or near to a given temperature. Then, even when the reactive gas reaches the wafer 4 heated in the chamber 5, the reactive gas doesn't cause the wafer 4 to be cooled. Consequently, a uniform distribution in temperature at the wafer 4 and a uniform amount of heat treatment can be realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lamp annealing apparatus, and more particularly to a lamp annealing apparatus used for processing a reactive gas on a wafer.

[0002]

2. Description of the Related Art As shown in FIG. 2, a conventional lamp annealing apparatus heats a chamber 5 for processing a wafer 4, a wafer supporting jig 3 for supporting the wafer 4 in the chamber 5, and a wafer 4. The reaction gas supply device 1 includes the heating lamp 2, the chamber, and the pipe connection jig 6.

The wafer 4 is heated to a predetermined temperature by the heating lamp 2 in a short time of 5 to 20 seconds while being supported in the chamber 5 by the wafer supporting jig 3.
The reaction gas is supplied from the reaction gas supply device 1 to the chamber 5 and reaches the heated wafer 4 to react therewith. In this case, the temperature of the reaction gas supplied is 20 to
At room temperature at 25 ° C.

[0004]

In this conventional lamp annealing apparatus, the heating of the wafer is as short as 5 to 20 seconds, the heating method is the lamp heating method, and the chamber volume is 10 The reaction gas supplied to the chamber in the room temperature state of 20 to 25 ° C. is not heated and contacts the wafer in the room temperature state by the time it reaches the wafer because it is as small as ˜20 l. Therefore, the wafer is partially cooled, and the temperature distribution in the wafer surface is 40-80%.
There is a problem that variations in temperature occur and the amount of heat treatment on the wafer surface becomes non-uniform, which adversely affects variations in the electrical characteristics of the product.

An object of the present invention is to provide a lamp anneal device which can obtain uniform electrical characteristics of a product with a uniform amount of heat treatment in the wafer surface.

[0006]

According to the present invention, a chamber for heating a wafer, a wafer supporting jig for supporting the wafer in the chamber, a heating lamp for heating the chamber, and a reaction for the chamber. In a lamp annealing device having a reaction gas supply device for supplying a gas and a pipe connecting jig for connecting the reaction gas supply device and the chamber, the reaction gas is heated between the reaction gas supply device and the chamber. A reaction gas heating mechanism is provided.
The reaction gas heating mechanism includes a gas heating chamber, a heating protection device arranged on the outer periphery of the gas heating chamber, a shielding jig, a heater insulated and shielded by the shielding jig and the heating protection device, and And a temperature control device that controls the temperature of the gas heating chamber.

[0007]

Embodiments of the present invention will now be described with reference to the drawings.

FIG. 1 is a schematic sectional view of a reaction gas supply unit according to an embodiment of the present invention.

As shown in FIG. 1, the reaction gas used for wafer processing transferred from the reaction gas supply device 1 through the pipe is transferred to the gas heating chamber 9 at a temperature near room temperature of 20 to 25 ° C. or lower. To be done. The gas heating chamber 9 is adiabatically shielded by the heating chamber protection device 7 and the shielding jig 13 and heated by the heater 8, but the heater thermocouple 1
The temperature of the heater 8 is detected by 0 and is maintained at the temperature set by the temperature control device 11. The reaction gas transferred to the gas heating chamber 9 is heated to a predetermined temperature or the vicinity thereof while passing through the inside of the gas heating chamber 9 whose heating temperature is controlled, and transferred to the chamber 5.

In the chamber 5, the wafer 4 supported by the wafer supporting jig 3 is heated by the heating lamp 2. Since the transferred reaction gas has the same temperature as that of the heated wafer 4, the wafer 4 can maintain the temperature distribution in the plane of the wafer 4 without being partially cooled.

[0011]

As described above, according to the present invention, the reaction gas used in the wafer processing of the lamp annealing apparatus is heated by the reaction gas heating mechanism before being transferred to the chamber, so that the heating is performed by the heating lamp in the chamber. Since the formed wafer is not partially cooled by the reaction gas, the in-plane temperature distribution of the wafer can be maintained uniform.

Therefore, there is an effect that the amount of heat treatment on the wafer surface becomes uniform and the variation in the electrical characteristics of the product can be eliminated.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a reaction gas supply unit according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of an example of a reactive gas supply unit of a conventional lamp annealing device.

[Explanation of symbols]

 1 Reactive Gas Supply Device 2 Heating Lamp 3 Wafer Support Jig 4 Wafer 5 Chamber 6 Piping Connection Jig 7 Heating Chamber Protective Device 8 Heater 9 Gas Heating Chamber 10 Heater Thermocouple 11 Temperature Control Device 12 Heater Power Supply Device 13 Shield jig

Claims (2)

[Claims] 1. A chamber for heat-treating a wafer, a wafer supporting jig for supporting the wafer in the chamber, a heating lamp for heating the chamber, and a reaction gas supply device for supplying a reaction gas to the chamber. And a lamp annealing device having a pipe connecting jig for connecting the reaction gas supply device and the chamber, and a reaction gas heating mechanism for heating the reaction gas between the reaction gas supply device and the chamber. A lamp annealing device characterized by the above. 2. The reaction gas heating mechanism, a gas heating chamber, a heating protection device arranged on the outer periphery of the gas heating chamber,
2. A shield jig, a heater insulated and shielded by the shield jig and the heating protection device, and a temperature control device for controlling the temperature of the gas heating chamber. The described lamp annealing device.