JPS6081819A - Infrared ray heat treatment device - Google Patents

Infrared ray heat treatment device

Info

Publication number
JPS6081819A
JPS6081819A JP18964983A JP18964983A JPS6081819A JP S6081819 A JPS6081819 A JP S6081819A JP 18964983 A JP18964983 A JP 18964983A JP 18964983 A JP18964983 A JP 18964983A JP S6081819 A JPS6081819 A JP S6081819A
Authority
JP
Japan
Prior art keywords
sample
heat treatment
heat
infrared ray
uniformly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18964983A
Other languages
Japanese (ja)
Inventor
Takashi Yahano
矢羽野 俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18964983A priority Critical patent/JPS6081819A/en
Publication of JPS6081819A publication Critical patent/JPS6081819A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To enable to heat the whole surface of a sample uniformly by a method wherein rod type infrared ray lamps are arranged leaving wide intervals at the part above the center part of the sample to be heat-treated, whereas they are arranged closely on the circumferential part, and the sample is rotated while the heat treatment is performed. CONSTITUTION:Rod type infrared ray lamps 2 are closely arranged on the circumferential part of a sample, whereas they are arranged leaving wider intervals between them on the part above the center part of the sample, and the sample is rotated in order to obtain the symmetry property in rotating direction when heated. As a result, the temperature distribution above the sample can be maintained almost uniformly when the heat treatment is performed using the rod type infrared ray lamps, the whole surface of the sample is uniformly heat-treated, the generation of sliplines is reduced, and the period of heat treatment is reduced, thereby enabling to improve the yield of production and the reliability of semiconductor devices.

Description

【発明の詳細な説明】 (1)発明の技術分野 本発明は赤外線熱処理装置、詳しくは棒状の赤外線ラン
プの配置を改良し、試料を回転させる構成とした熱処理
装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to an infrared heat treatment apparatus, and more particularly to a heat treatment apparatus in which the arrangement of rod-shaped infrared lamps is improved and a sample is rotated.

(2)技術の背景 ウェハに不純物をイオン注入して形成されるイオン注入
層の活性化、または燐・シリケート・ガラス(PSG 
)に含まれる不純物を拡散させるための熱処理には一般
に電気炉が用いられるが、熱処理時間を短縮する目的で
最近棒状の赤外線ラン(1) プを用いる赤外線アニールが行われるようになった。赤
外線アニールによるときは熱処理時間が1分程度ときわ
めて短く、不純物の再分布を抑える効果もあることから
多用される傾向にある。
(2) Background of the technology Activation of an ion-implanted layer formed by ion-implanting impurities into a wafer, or phosphorus-silicate-glass (PSG)
) Generally, an electric furnace is used for heat treatment to diffuse impurities contained in the materials, but recently infrared annealing using a rod-shaped infrared lamp (1) has started to be performed in order to shorten the heat treatment time. Infrared annealing tends to be used frequently because the heat treatment time is extremely short, about 1 minute, and it also has the effect of suppressing the redistribution of impurities.

上記の赤外線熱処理装置は第1図に断面図で示され、同
図において、■は試料(例えばウェハ)、2は赤外線ラ
ンプ、3は反射鏡を示し、赤外線ランプ2は紙面の垂直
方向に延びる棒状の例えば2KHのパワーのものである
。かかる装置において、試料表面は1000℃〜120
0℃に加熱され、前記した如くに熱処理は1分程度の短
時間内に終了する。
The above-mentioned infrared heat treatment apparatus is shown in cross-sectional view in Fig. 1, in which ■ indicates a sample (for example, a wafer), 2 indicates an infrared lamp, and 3 indicates a reflecting mirror, and the infrared lamp 2 extends in the direction perpendicular to the plane of the paper. It is a rod-shaped one with a power of 2KH, for example. In such an apparatus, the sample surface is heated to 1000°C to 120°C.
It is heated to 0° C., and as described above, the heat treatment is completed within a short time of about 1 minute.

(3)従来技術と問題点 上記した装置において、赤外線ランプは等間隔に配置さ
れ、単位時間当り試料の単位面積に与えられる熱量は均
一である。しかし、試料例えばウェハは周辺部では熱が
逃げるので中央部に比べて温度が低くなることが確認さ
れた。試料が例えば毎秒50℃〜100℃当りで昇温さ
れ1200°Cの定常状態に達するまでの間に、ウェハ
の中央部と周辺(2) 部とでは100℃程度の温度差があることが判明した。
(3) Prior Art and Problems In the above-described apparatus, the infrared lamps are arranged at equal intervals, and the amount of heat given to a unit area of the sample per unit time is uniform. However, it was confirmed that the temperature of a sample such as a wafer is lower than that of the center because heat escapes at the periphery. It was found that while the sample was heated at a rate of 50°C to 100°C per second until it reached a steady state of 1200°C, there was a temperature difference of about 100°C between the center and periphery (2) of the wafer. did.

その結果、試料の熱処理の均一性が得られない。そのこ
とは、従来の装置を用いる熱処理の結果、例えば結晶方
位(100)のウェハにおいてはその4隅に、また結晶
方位(lli )のウェハにおいてはその6隅に、スリ
ップライン(結晶欠陥)が発生すること、また、シート
抵抗もウェハの周辺部に向けて高くなる事実から確かめ
られたものである。かかる加熱の不均一性により、形成
される半導体素子の電気特性のバラツキが生し、場合に
よってはウェハが変形することも経験された。
As a result, uniformity in heat treatment of the sample cannot be obtained. This means that, as a result of heat treatment using conventional equipment, slip lines (crystal defects) are formed at the four corners of a wafer with crystal orientation (100), and at the six corners of a wafer with crystal orientation (lli), for example. This was confirmed from the fact that sheet resistance also increases toward the periphery of the wafer. It has been experienced that such non-uniform heating causes variations in the electrical characteristics of the semiconductor elements formed, and in some cases, the wafer is deformed.

(4)発明の目的 本発明は上記従来の問題に鑑み、試料の温度分布がほぼ
平坦な、すなわち試料が全面にわたって均一に熱せられ
る赤外線熱処理装置を提供することを目的とする。
(4) Purpose of the Invention In view of the above-mentioned conventional problems, an object of the present invention is to provide an infrared heat treatment apparatus in which the temperature distribution of the sample is substantially flat, that is, the sample is heated uniformly over the entire surface.

(5)発明の構成 そしてこの目的は本発明によれば、棒状赤外線ランプを
用いる熱処理装置にして、前記ランプ(3) は熱処理される試料の中央部上では相に周辺部上では密
に配置し、前記試料は熱処理中回転せしめられる構成と
したことを特徴とする熱処理装置を提供することによっ
て達成される。
(5) Structure and object of the invention According to the present invention, there is provided a heat treatment apparatus using rod-shaped infrared lamps, wherein the lamps (3) are arranged in a phase on the central part of the sample to be heat-treated and densely arranged on the peripheral part. However, this can be achieved by providing a heat treatment apparatus characterized in that the sample is rotated during the heat treatment.

(6)発明の実施例 以下本発明実施例を図面によって詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.

本願発明者は、試料の全面を均一に熱処理することにつ
いて、従来例においては、赤外線ランプ2は等間隔に配
置されていて試料の単位面積が単位時間当り受ける熱量
は同一であっても、試料の周辺部においては熱が逃げる
ため、試料の中心から周辺に向かって降下する温度分布
が得られることに着目し、第2図に示す如く赤外線ラン
プを、等間隔ではなく、試料の中心部では粗に、そして
周辺部分では密に配置することを考えた。なお第2図以
下において、既に図示した部分と同し部分は同一符号を
付して表示する。
The inventor of the present application has discovered that in order to uniformly heat treat the entire surface of a sample, in the conventional example, the infrared lamps 2 are arranged at equal intervals, and even though the unit area of the sample receives the same amount of heat per unit time, the sample Since heat escapes at the periphery of the sample, we focused on the fact that a temperature distribution that decreases from the center of the sample toward the periphery was obtained.As shown in Figure 2, infrared lamps were placed not at equal intervals but at the center of the sample. I thought about arranging them roughly and densely in the peripheral areas. Note that in FIG. 2 and subsequent figures, the same parts as those already illustrated are designated by the same reference numerals.

ただ上記の如くに赤外線ランプ2を配置しても、それは
紙面の垂直方向に延びる棒状ランプであるから、加熱に
ついて試料の回転方向には対称(4) 性がない。加熱の回転方向の対称性を得るために、本願
発明者は試料を回転させることを考えた。
However, even if the infrared lamp 2 is arranged as described above, since it is a bar-shaped lamp extending perpendicular to the plane of the paper, there is no symmetry (4) in the direction of rotation of the sample regarding heating. In order to obtain symmetry in the rotational direction of heating, the inventor of the present invention considered rotating the sample.

本発明の実施例は第3図に断面図で示され、同図におい
て、4は熱処理チェンバ、4aは試料の出入り用のふた
、4bはチェンバに例えば窒素(N2 )ガスを矢印方
向に導入するガス供給口、5は試料1を載置する回転可
能な公知のステージ、6は赤外線ランプを収納するラン
プハウス、7は試料の温度をモニターする熱電対、8は
サイリスタを示し、熱電対8の検知した温度はサイリス
クからランプハウス6にフィードされ、立ち上り温度が
急で短時間に安定した定常状態に達し、熱処理中この定
常状態を保ち、熱処理が終ると急速に降温するよう設定
されている。試料と赤外線ランプとの間の間隔は5cm
〜10cm程度に、また赤外線ランプそれぞれのパワー
は従来例同様2に−に設定した。
An embodiment of the present invention is shown in a sectional view in FIG. 3, in which 4 is a heat treatment chamber, 4a is a lid for entering and exiting a sample, and 4b is for introducing nitrogen (N2) gas into the chamber in the direction of the arrow. 5 is a known rotatable stage on which the sample 1 is placed; 6 is a lamp house that houses an infrared lamp; 7 is a thermocouple that monitors the temperature of the sample; 8 is a thyristor; The detected temperature is fed from Cyrisk to the lamp house 6, which is set so that the rising temperature is rapid and reaches a stable steady state in a short period of time, this steady state is maintained during the heat treatment, and the temperature rapidly decreases after the heat treatment is completed. The distance between the sample and the infrared lamp is 5 cm.
~10 cm, and the power of each infrared lamp was set to 2 or - as in the conventional example.

上記の装置によりウェハを熱処理したところ、スリップ
ラインの発生が著しく減少したことが確認され、ウェハ
全面において温度分布はかなり平(5) 坦であることが推定された。
When a wafer was heat-treated using the above-mentioned apparatus, it was confirmed that the occurrence of slip lines was significantly reduced, and it was estimated that the temperature distribution was quite flat over the entire surface of the wafer (5).

なお、必要があれば赤外線ランプは図示の試料に対して
反対側にも設置してもよく、また供給ガスは酸素(02
)ガスにしてもよい。
If necessary, the infrared lamp may be installed on the opposite side of the sample shown in the figure, and the supply gas may be oxygen (02
) You can use gas.

(7)発明の効果 以」二詳細に説明した如く、本発明によれば、棒状の赤
外線ランプを用いる熱処理において、試料上の温度分布
がほぼ平坦に保たれるので、試料は全面にわたって均一
に熱処理され、従来例におけるスリップラインの発生が
著しく減じ、半導体装置の製造歩留りと製品の信頼性が
、熱処理時間を短縮化しつつ向上せしめられる効果があ
る。
(7) Effects of the Invention As explained in detail in 2, according to the present invention, the temperature distribution on the sample is kept almost flat during heat treatment using a rod-shaped infrared lamp, so the sample is uniformly distributed over the entire surface. As a result of the heat treatment, the occurrence of slip lines in the conventional example is significantly reduced, and the manufacturing yield of semiconductor devices and product reliability are improved while shortening the heat treatment time.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の赤外線ランプ熱処理装置の概略を示すた
めの断面図、第2図は本発明の原理に従う赤外線ランプ
熱処理装置の概略断面図、第3図は本発明の実施例の断
面図である。 1−試料、2−棒状赤外線ランプ、 3−反射鏡、4−・・処理チェンバ、4 a −ふた、
4b−・ガス供給口、5−ステージ、(6) 6−ランプハウス、7−熱電対、 8−サイリスク (7) 第1図 第2図 第3図 92
FIG. 1 is a sectional view schematically showing a conventional infrared lamp heat treatment apparatus, FIG. 2 is a schematic sectional view of an infrared lamp heat treatment apparatus according to the principles of the present invention, and FIG. 3 is a sectional view of an embodiment of the present invention. be. 1-sample, 2-rod-shaped infrared lamp, 3-reflector, 4-processing chamber, 4a-lid,
4b-・Gas supply port, 5-stage, (6) 6-lamp house, 7-thermocouple, 8-silisk (7) Fig. 1 Fig. 2 Fig. 3 92

Claims (1)

【特許請求の範囲】[Claims] 棒状赤外線ランプを用いる熱処理装置にして、前記ラン
プは熱処理される試料の中央部上では粗に周辺部上では
密に配置し、前記試料は熱処理中回転せしめられる構成
としたことを特徴とする熱処理装置。
A heat treatment apparatus using rod-shaped infrared lamps, wherein the lamps are arranged sparsely on the central part of the sample to be heat treated and densely on the peripheral part, and the sample is rotated during the heat treatment. Device.
JP18964983A 1983-10-11 1983-10-11 Infrared ray heat treatment device Pending JPS6081819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18964983A JPS6081819A (en) 1983-10-11 1983-10-11 Infrared ray heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18964983A JPS6081819A (en) 1983-10-11 1983-10-11 Infrared ray heat treatment device

Publications (1)

Publication Number Publication Date
JPS6081819A true JPS6081819A (en) 1985-05-09

Family

ID=16244846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18964983A Pending JPS6081819A (en) 1983-10-11 1983-10-11 Infrared ray heat treatment device

Country Status (1)

Country Link
JP (1) JPS6081819A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270532A (en) * 2001-03-14 2002-09-20 Tokyo Electron Ltd Heating device and thermal treatment apparatus
JP2007157780A (en) * 2005-11-30 2007-06-21 Ushio Inc Photoirradiation heating apparatus
JP2009200330A (en) * 2008-02-22 2009-09-03 Denso Corp Semiconductor manufacturing device
JP2017010800A (en) * 2015-06-23 2017-01-12 光洋サーモシステム株式会社 Lamp heating apparatus
JP2020076567A (en) * 2019-10-07 2020-05-21 光洋サーモシステム株式会社 Lamp heating apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270532A (en) * 2001-03-14 2002-09-20 Tokyo Electron Ltd Heating device and thermal treatment apparatus
JP2007157780A (en) * 2005-11-30 2007-06-21 Ushio Inc Photoirradiation heating apparatus
JP2009200330A (en) * 2008-02-22 2009-09-03 Denso Corp Semiconductor manufacturing device
JP2017010800A (en) * 2015-06-23 2017-01-12 光洋サーモシステム株式会社 Lamp heating apparatus
JP2020076567A (en) * 2019-10-07 2020-05-21 光洋サーモシステム株式会社 Lamp heating apparatus

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