JPS63160325A - Method and apparatus for giving and heat treatment to semiconductor wafer - Google Patents
Method and apparatus for giving and heat treatment to semiconductor waferInfo
- Publication number
- JPS63160325A JPS63160325A JP30655286A JP30655286A JPS63160325A JP S63160325 A JPS63160325 A JP S63160325A JP 30655286 A JP30655286 A JP 30655286A JP 30655286 A JP30655286 A JP 30655286A JP S63160325 A JPS63160325 A JP S63160325A
- Authority
- JP
- Japan
- Prior art keywords
- fork
- wafer
- temperature
- heat treatment
- furnace tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000010438 heat treatment Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 235000012431 wafers Nutrition 0.000 claims description 29
- 239000010453 quartz Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体ウェハの熱処理方法およびこれを実施
する九めの熱処理装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for heat treatment of semiconductor wafers and a ninth heat treatment apparatus for carrying out the method.
第３図は従来の半導体ウェハ熱処理装置の一例を示す概
略図であって、この装置によれば半導体ウェハｉｆｔ載
せたボート２が炭化ケイ素まｔは石英製のフォーク３上
に搭載され、このフォーク３をローダ４により移動して
加熱炉５の炉芯管６内に挿入し熱処理するようにしてい
る。FIG. 3 is a schematic diagram showing an example of a conventional semiconductor wafer heat treatment apparatus. According to this apparatus, a boat 2 carrying semiconductor wafers is mounted on a fork 3 made of silicon carbide or quartz. 3 is moved by a loader 4 and inserted into a furnace core tube 6 of a heating furnace 5 for heat treatment.
しかしながら上記のような半導体ウェハの熱処理方法で
は、半導体ウニへｌｔ−載せたボート２を搭載し九フォ
ーク３を設定温度に制御されている炉芯管６内に挿入す
ることは、炉芯管６内の温度が急激に低下して管内の温
度分布が不均一になり、この結果、半導体ウェハ１の均
一な熱処理が不可能となるという問題があった。However, in the heat treatment method for semiconductor wafers as described above, loading the boat 2 on the semiconductor urchin and inserting the nine forks 3 into the furnace core tube 6 whose temperature is controlled to a set temperature is not enough. There was a problem in that the temperature inside the tube decreased rapidly and the temperature distribution inside the tube became non-uniform, and as a result, uniform heat treatment of the semiconductor wafer 1 became impossible.
この発明は以上述べた炉芯管内の温度分布が不均一にな
るという問題点を除去し、炉芯管内温度分布の変動のな
い熱処理方法および装置を提供することを目的とする。It is an object of the present invention to eliminate the above-mentioned problem of non-uniform temperature distribution within the furnace core tube and to provide a heat treatment method and apparatus in which the temperature distribution within the furnace core tube does not fluctuate.
この発明における半導体ウェハの熱処理方法は、ウェハ
を載せたボートを搭載したフォークをヒータによフ加熱
した状態において炉芯管内に挿入するようにし九もので
ある＠
また、熱処理装置としては、炉芯管ｅ！する加熱炉と、
ウェハを載せたボートを炉芯管へ出入させるフォークと
、フォーク内に温度コントローラにより加熱するヒータ
を備えたものである。The heat treatment method for semiconductor wafers according to the present invention is such that a fork carrying a boat carrying wafers is heated by a heater and then inserted into the furnace core tube. Tube e! A heating furnace to
It is equipped with a fork that moves the boat loaded with wafers in and out of the furnace core tube, and a heater inside the fork that heats it using a temperature controller.
この発明は以上のような熱処理方法および装置としたこ
とで、ウェハを載せたデートを搭載したフォーク全ヒー
タにより加熱した状態で炉芯管内へ挿入することにより
、炉芯管内の温度分布の変動もなく半導体ウェハの均一
な熱処理を行なうことができる。The present invention has the heat treatment method and apparatus as described above, and by inserting the date into the furnace core tube in a state in which the fork carrying the wafer is heated by all the heaters, fluctuations in the temperature distribution inside the furnace core tube can be prevented. Uniform heat treatment of semiconductor wafers can be performed without any problems.
第１図はこの発明による半導体ウェハの熱処理装置を示
す斜視図であって、フェノ５１ｔ−載せ几セー）２ｔ−
搭載するフォーク３はヒータ７を内蔵し九２本の並設し
た管部材からなり、両フォーク３゜３はその外端に固定
金具８を介してフォーク３゜３を加熱炉５の炉芯管６に
出入する友めのローダ４が取付けである。まｔ、上記フ
ォーク３内のヒータ７は温度コントローラ９により加熱
される。FIG. 1 is a perspective view showing a semiconductor wafer heat treatment apparatus according to the present invention.
The mounted fork 3 has a built-in heater 7 and consists of 92 pipe members arranged in parallel, and both forks 3. A friend loader 4 that goes in and out of 6 is attached. Also, the heater 7 in the fork 3 is heated by a temperature controller 9.
なお、１０はフォーク３を炉芯管６内へ挿入した際、炉
芯管口を閉止するキャップである。Note that 10 is a cap that closes the furnace core tube opening when the fork 3 is inserted into the furnace core tube 6.
第２図は上記フォーク３の拡大断面図を示し、ヒータ７
は絶縁管１１を介して炭化ケイ素管１２で保護され、そ
の外部を石英管１３で被つ九構造となっている。FIG. 2 shows an enlarged sectional view of the fork 3, and shows the heater 7.
is protected by a silicon carbide tube 12 via an insulating tube 11, and the outside is covered with a quartz tube 13.
上記のように構成され念ウェハの熱処理装置を用い比熱
処理方法は、まず、ウェハ１を載せたデート２をフォー
ク３に搭載する。その後、７オーり３内に内蔵し几ヒー
タ７を温度コントローラ９により所望の温度まで昇温し
フォーク３′ｔ−予備加熱する。この状態においてフォ
ーク３をローダ４を動作して所定温度にコントレールさ
れている炉芯管６内にスライド移動し、ウェハ１が熱処
理される。すなわち、炉芯管６内へのフォーク３の挿入
時、上記フォーク３は所定温度に予備加熱されているの
で、炉芯管６内の温度低下が抑えられ、炉芯管内の温度
分布の電動もなくフェノ１の均一な熱処理が可能となる
。In the specific heat treatment method using the wafer heat treatment apparatus configured as described above, first, the date 2 on which the wafer 1 is mounted is mounted on the fork 3. Thereafter, the temperature controller 9 raises the temperature of the heater 7 housed in the 7-hole 3 to a desired temperature to preheat the fork 3't. In this state, the fork 3 is slid into the furnace core tube 6 whose temperature is controlled at a predetermined temperature by operating the loader 4, and the wafer 1 is heat-treated. That is, when the fork 3 is inserted into the furnace core tube 6, since the fork 3 is preheated to a predetermined temperature, the temperature drop inside the furnace core tube 6 is suppressed, and the temperature distribution inside the furnace core tube is also controlled. Uniform heat treatment of Pheno 1 becomes possible.
以上説明したようにこの発明によれば、ウェハを搭載し
たフォークを予備加熱した状態で炉芯管内に挿入しウェ
ハを熱処理するようにし九ので、炉芯管内の温度分布に
変動がなくウェハの均一な熱処理が行なえ、酸化膜厚分
布や不純物拡散深さの分布が改善されフェノ）の歩留ｐ
の向上が図れる。As explained above, according to the present invention, the fork carrying the wafer is inserted into the furnace core tube in a preheated state and the wafer is heat-treated.Therefore, there is no fluctuation in the temperature distribution inside the furnace core tube, and the wafer is uniformly heated. As a result, the oxide film thickness distribution and impurity diffusion depth distribution are improved, and the yield rate of
can be improved.
第１図はこの発明の一実施例によるウェハ熱処理装置の
斜視図、第２図はフォークの拡大断面図、＠３図は従来
のウェハ熱処理装置の概略図である。
１′・・・半導体ウェハ、２・・・ｙｆ−）、３・・・
フォーク、４・・・ローダ、５・・・加熱炉、６・・・
炉芯管、７・・・ヒータ、９・・・温度コントローラ、
１２・・・炭化ケイ素管、１３・・・石英管。FIG. 1 is a perspective view of a wafer heat processing apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view of a fork, and FIG. 3 is a schematic diagram of a conventional wafer heat processing apparatus. 1'...Semiconductor wafer, 2...yf-), 3...
Fork, 4...Loader, 5...Heating furnace, 6...
Furnace core tube, 7... Heater, 9... Temperature controller,
12...Silicon carbide tube, 13...Quartz tube.
Claims (3)
た状態で加熱炉内に挿入し、上記半導体ウエハを熱処理
する方法において、 上記フオークは内部に収納されたヒータにより予備加熱
した状態において加熱炉内に挿入するようにした、 ことを特徴とする半導体ウエハの熱処理方法。(1) In a method of heat-treating the semiconductor wafers by inserting a boat carrying semiconductor wafers into a heating furnace while mounted on a fork, the fork is preheated by a heater housed inside the heating furnace. A method for heat treatment of a semiconductor wafer, characterized in that the wafer is inserted into a semiconductor wafer.
と、 半導体ウエハを載せたボートを炉芯管に出入させるため
のフオークと、 フオーク内に内蔵され、該フオークを温度コントローラ
により所定温度に加熱させるヒータと、を備えたことを
特徴とする半導体ウエハの熱処理装置。(2) A heating furnace having a core tube for heat-treating semiconductor wafers, a fork for moving a boat loaded with semiconductor wafers into and out of the core tube, and a temperature controller built in the fork to keep the fork at a predetermined temperature. A heat treatment apparatus for semiconductor wafers, comprising: a heater for heating.
管内に収納したことを特徴とする特許請求の範囲第２項
記載の半導体ウエハの熱処理装置。(3) The semiconductor wafer heat treatment apparatus according to claim 2, wherein the fork is a silicon carbide tube with a built-in heater housed in a quartz tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30655286A JPS63160325A (en) | 1986-12-24 | 1986-12-24 | Method and apparatus for giving and heat treatment to semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30655286A JPS63160325A (en) | 1986-12-24 | 1986-12-24 | Method and apparatus for giving and heat treatment to semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63160325A true JPS63160325A (en) | 1988-07-04 |
Family
ID=17958415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30655286A Pending JPS63160325A (en) | 1986-12-24 | 1986-12-24 | Method and apparatus for giving and heat treatment to semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63160325A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023072840A (en) * | 2021-11-15 | 2023-05-25 | 株式会社Sumco | Horizontal heat treatment furnace, heat treatment method, and silicon wafer manufacturing method |
-
1986
- 1986-12-24 JP JP30655286A patent/JPS63160325A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023072840A (en) * | 2021-11-15 | 2023-05-25 | 株式会社Sumco | Horizontal heat treatment furnace, heat treatment method, and silicon wafer manufacturing method |
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