JPS61141123A - Equipment for manufacturing semiconductor - Google Patents

Abstract

PURPOSE:To enable stabilization of the electrical characteristics of the integrated circuits, improvement in yield, and the mass-processing of semiconductor substrates by providing a gas heating means for causing the temperature of an introduced gas to approach that of a uniform temperature region, between an inlet for the gas introduced from the outside and the semiconductor substrates inserted into a constant temperature region. CONSTITUTION:The gas introduced from a gas inlet 1 of the periphery of a heat diffusion reactor reaches a gas interfering plate 6 before reaching the uniform temperature region in which the semiconductor substrates 5 planted on a semiconductor holder 4 are inserted. Since the straight way is blocked, it takes a long time to reach the semiconductor substrates and the gas is warmed during that. The gas interfering plate is weld to a reactor core tube 2 and is united into one body and a heater 3 produces the uniform temperature region. It is also possible to provided an auxiliary gas interfering plate 7 in the forward position of said gas interfering plate in order to further improve the thermal efficiency.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention is applicable to thermal oxidation, thermal diffusion, annealing, etc. in which a gas is introduced from the outside and a uniform temperature range must be maintained in the half-body fabrication process. This relates to a heat treatment furnace.

[Prior art]

Conventionally, various heat treatments such as thermal oxidation, thermal diffusion, and annealing have been performed by introducing gas from the gas inlet l of a thermal diffusion furnace and inserting a semiconductor substrate holder 4 into a uniform temperature area, as shown in FIG. Ta.

[Problem that the invention seeks to solve]

However, in the conventional heat diffusion furnace, in order to obtain a uniform temperature region, the semiconductor substrate 5 is not inserted, and the same gas (5 to 20 liters/min) as used during heat treatment of the semiconductor substrate is supplied to the furnace core tube 2 and the gas inlet 1. Since the temperature was measured while flowing from the gas inlet to ensure a uniform temperature area, when the semiconductor substrate 5 was inserted afterwards, the semiconductor substrate closest to the gas inlet was blocked by gas that had not reached the temperature of the uniform temperature area. There is a problem in that the temperature in the subsequent stage, which is supposed to be a uniform temperature region, is no longer constant, and uniform heat treatment for each semiconductor substrate is inhibited.

Therefore, in order to solve these conventional problems, the present invention secures a uniform temperature area without inserting a semiconductor substrate, and the temperature in the uniform temperature area does not change even if the semiconductor substrate is subsequently heat-treated. The semiconductor substrate is intended for use in a thermal diffusion furnace in which uniform heat treatment is performed.

[Means to solve the problem]

In order to solve the above problems, the thermal diffusion furnace of the present invention maintains the temperature of the introduced gas to a uniform temperature range between the inlet for the externally introduced gas and the semiconductor substrate inserted in the constant temperature range. It is characterized by having gas heating means for bringing it closer.

〔Example〕

Embodiments of the present invention will be described below based on the drawings. FIG. 1 is a sectional view of a first embodiment of the invention. As shown in FIG. 1, the gas introduced from the gas inlet 1 from the outer periphery of the thermal diffusion furnace passes through the gas interference plate before reaching the uniform temperature region of the semiconductor substrate 5t placed on the semiconductor holder 4. 6
Because the straight path is blocked, it takes time for the gas to reach the semiconductor substrate, during which time the gas is warmed. The gas interference plate is welded and integrated with the furnace core tube 2. 3 is a heater for creating a uniform temperature area.

FIG. 8 is a sectional view of a second embodiment of the invention.

FIG. 8 shows an improved version of the first embodiment, in which an auxiliary gas interference plate 7 is provided before the gas interference plate in order to increase thermal efficiency.

FIG. 4 is a sectional view of an eighth embodiment of the present invention.

In the eighth embodiment, the piping from the gas inlet is extended to the inside of the furnace core tube, and in order to efficiently raise the temperature of the introduced gas, it is made into a spiral shape to gain length, and the gas inlet is directed toward the semiconductor substrate. This makes it more efficient.

FIG. 6 is a sectional view of a fourth embodiment of the invention.

In the fourth embodiment, the gas interference part is not integrated with the furnace core tube, but is made independent. Therefore, it has the advantage of being easy to repair and clean.

, FIG. 6 is a sectional view of a fifth embodiment of the present invention.

In the sixth embodiment, the semiconductor holder 4 can also hold a gas interference plate, or it can be directly welded to the semiconductor holder 4.

FIG. 97 is a sectional view of a sixth embodiment of the present invention.

In the sixth embodiment, a heater is arranged separately from the semiconductor substrate heat treatment heater 8 near the gas introduction port, and the introduced gas is heated. In the above embodiments, the temperature in the uniform temperature region during temperature measurement does not change even after the semiconductor substrate is inserted.

It works more effectively as the temperature of the introduced gas approaches the temperature of the uniform temperature range as much as possible.

〔Effect of the invention〕

As explained above, the present invention can be used for thermal diffusion in semiconductor manufacturing equipment by using a simple structure that includes a means for warming introduced gas between a uniform temperature region and an external gas inlet. This has the effect of maintaining a uniform temperature range. For this reason, temperature uniformity during heat treatment of semiconductor substrates was maintained, stabilizing the electrical characteristics of integrated circuits, improving yields, and making it possible to process large quantities of semiconductor substrates, which led to reductions in the cost of integrated circuits. .

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a thermal diffusion furnace of a semiconductor manufacturing apparatus according to the present invention, FIG. 2 is a sectional view of a thermal diffusion furnace of a conventional semiconductor manufacturing apparatus, FIG. 8, FIG. 4, FIG. 6 and 7 are cross-sectional views showing an embodiment of the means for warming the introduced gas according to the present invention. l... Gas inlet 2... Furnace core tube 8... Thermal diffusion furnace heater 4... Semiconductor substrate holder 6... Semiconductor substrate 6... Gas interference plate 7... Auxiliary gas interference Plate 8...Heater or higher

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus for heat-treating a semiconductor substrate in a uniform temperature region by introducing gas from the outside, the semiconductor manufacturing device comprising means for warming the introduced gas before the uniform temperature region.