KR0121711Y1 - Hot-wall type rapid thermal processing device - Google Patents

Abstract

Novel hot-walled RTP devices are disclosed. A reaction furnace having a solidified interior thereof, a first heater positioned at an upper end of an outer surface of the reactor for heating the high temperature part of the reactor, a lower end of the outer surface of the reactor and the lower temperature part for heating the low temperature part of the reactor; And a second heater positioned at a vertical lower end of the first heater, and a heat shield plate positioned between the first heater or the second heater and the reaction furnace and movable up and down. By preventing radiant heating from the top to the bottom, it is possible to reduce the length of the transition sheet and to eliminate thermal bundle differences between the wafer on top of the boat and the wafer on the bottom.

Description

Hot-Wall Rapid Thermal Processing Unit

1 is a schematic diagram of a conventional hot-wall type RTP apparatus.

2a to 2c is a schematic diagram of a hot-walled RTP device according to the present invention.

3 is a schematic diagram of a heat shield of the hot-wall type RTP apparatus according to the present invention.

* Explanation of symbols for main parts of the drawings

1: first heater 2: second heater

3: heater 4: upper crack field

5: bottom crack length 6: door plate

7: 2nd mobile unit 8: 1st mobile unit

9: Magnetic folder 10: Blower pump

11: dry pump 12: heat shield

13: exhaust pipe 14: heat shield

15: reactor

The present invention relates to a Rapid Therfmal Processing (hereinafter referred to as RTP) apparatus, and more particularly to a hot-wall type RTP apparatus capable of preventing radiant heating from top to bottom.

A major advantage of the RTP apparatus, which is widely used in the manufacturing process of semiconductor devices, is that a short heating time and processing at high temperature by lamp heating can reduce the thermal budget of the wafer. This is in contrast to the large temperature and long time-providing processes that are provided in a typical reactor, resulting in a larger thermal bundle on the wafer.

In general, the RTP device is mainly the lamp heating type using a tungsten halogen lamp or an arc lamp as the heat source. However, such lamp-heated RTP apparatus has the following problems.

First, because of the cold type, the temperature difference between the edge portion and the center portion of the wafer is large. That is, the temperature of the wafer edge portion is lowered and slip occurs.

Second, since the temperature control is performed based on the temperature measured by the pyrometer reading the emissivity of the back side of the heated wafer, the state of the back side of the wafer, such as an attack during the semiconductor manufacturing process, The temperature value read by the pyrometer varies depending on the deposited oxide film, nitride film, polysilicon film, or the like, or depending on the absorption rate of the gas used in the RTP process. As a result, accurate temperature control becomes difficult.

Thus, a hot-wall type RTP apparatus has been devised to solve the above problems of the lamp heated RTP apparatus. The hot-wall type RTP apparatus is largely divided into an RTP apparatus having one temperature zone and an RTP apparatus having two temperature zones of a high temperature part and a low temperature part. An RTP device with one temperature zone is disclosed in US Pat. No. 4,857,689, which is a single wafer type and cannot be preheated. The RTP apparatus having two temperature zones is filed by Korean Applicant Model No. 94-20402 (currently with the Korean Intellectual Property Office). Batch processing of the wafer is possible and preheating and post cooling are possible.

Figure 1 is a schematic diagram of a hot-walled RTP apparatus with two conventional temperature zones described above.

Referring to FIG. 1, a conventional RTP apparatus includes a capsule reactor 15 for heat treating a wafer, a first heater 1 positioned at an upper end of an outer surface of the reactor for heating a high temperature portion of the reactor, A second heater (2) located at the lower end of the outer surface of the reactor for heating the low temperature part of the reactor, a heat insulator (3) located between the first heater and the second heater, located at the top of the reactor An upper crack field 4, a lower crack field 5 located at the lower end of the reactor, a door plate 6 located at the bottom of the reactor and supplying gas to the reactor, and carrying wafers A first mover 8 for moving the boat from the lower crack field to the upper crack field, a second mover 7 for moving the boat to the lower crack field, a magnet folder 9 attached to the first mover, An exhaust pipe connected to the top of the reactor ( 13 and a blower pump 10 and a drying pump 11 located at the end of the exhaust pipe 13.

However, according to the conventional hot-wall RTP apparatus described above, the wafer placed on the top of the boat when moving from the lower end of the reactor (hereinafter referred to as the lower) to the upper end of the reactor (hereinafter referred to as the upper) for heat treatment Moves first to the top and last to the bottom (i.e., first-in, last-out), so the total thermal bundles received by the wafer on top of the boat and the wafer on the bottom are different. This difference in thermal bundles can result in poor uniformity of wafer to wafer during the RTP process. In addition, there is a problem that the length of the transition sheet is lengthened by the radiant heating from the top to the bottom to increase the height of the entire equipment.

Accordingly, an object of the present invention is to provide a hot-wall type RTP apparatus capable of preventing radiant heating from top to bottom.

The present invention to achieve the above object,

Reactors evacuated inside:

A first heater located at an upper end of an outer surface of the reactor to heat a high temperature part of the reactor;

A second heater positioned at a lower end of the outer surface of the reactor and a vertical bottom of the first heater to heat the low temperature part of the reactor; And

It is provided between the first heater or the second heater and the reaction furnace and provides a hot-wall type RTP device, characterized in that it comprises a heat shield that can move up and down.

The heat shield plate is preferably composed of silicon carbide (SiC) or a silicon carbide coated with a reflective high melting point metal, and preferably formed in a cylindrical or plate shape.

The heat shield may move between the upper end and the lower end of the reactor by a tungsten wire and an air cylinder connected to a guide surrounding the outer surface of the heat shield.

According to the present invention, it is possible to prevent radiant heating from the top to the bottom by providing a heat shield plate that can move up and down between the heater and the reactor.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

2A to 2C are schematic diagrams of a hot-walled RTP device according to the present invention. Reference numeral 1 is a first heater, 2 is a second heater, 3 is an insulator, 4 is an upper cracking field, 5 is a lower cracking field, 6 is a door flap, 7 is a second mover, 8 is a second Mover. 9 is magnetic folder, 10 is blower pump, 11 is dry pump, 12 is heat shield, 13 is exhaust pipe, 14 is heat shield, and 15 is reactor, that is quartz tube (quartz tube).

2A to 2C, the RTP apparatus according to the present invention includes a capsule-shaped reactor 15 for heat treating a wafer and an upper end portion of an outer surface of the reactor 15 for heating a high temperature portion of the reactor. A first heater 1 positioned therein, a second heater 2 located at the lower end of the outer surface of the reactor 15 and a vertical bottom of the first heater 1 to heat the low temperature part of the reactor, and the first A donut-shaped insulator 3 located between the heater 1 and the second heater 2, an upper crack field 4 located at an upper end portion of the reactor 15, and an inner portion of the reactor 15 Lower cracking field (5) located at the lower end, the bottom plate of the reactor 15, the door plate plate (6) for supplying gas to the reactor 15, the boat carrying the wafer to the lower cracking field A first mover 8 for moving the upper crack field 4 in 2, a second tooth for moving the boat to the lower crack field 5; A synchronizer 7, a magnet folder 9 attached to the first mover 8, an exhaust pipe 13 connected to the uppermost end of the reactor 15, and a blower located at an end of the exhaust pipe 13. The pump 10 and the drying pump 11, and between the heater and the reactor 15 is composed of a cylindrical heat shield plate 14 that can move between the upper and lower.

The first heater 1 is a heater capable of controlling 600 ° C to 1200 ° C, and the second heater 2 is a heater that can control 400 ° C to 800 ° C and is heated by a resistance heating method. The heat insulator 3 is provided to suppress radiant heat between the first heater 1 and the second heater 2.

The boat carrying the wafer is composed of a second mover 7 for moving from the wafer loading position to the low temperature part of the reactor and a first mover 8 for moving from the low temperature part to the high temperature part. The first mover 8 moves between the low temperature part and the high temperature part at a speed of up to 10 cm / sec, and is composed of a magnet folder 9 to prevent particle generation in the reactor.

The wafer that needs heat treatment is loaded in the boat and then moved in the reactor 15 by the action of the first and second movers 1 and 2. The interior of the reactor 15 is heated by the first and second heaters 1, 2 before the wafer is transported into the reactor 15. The upper part is heated to a high temperature by the first heater 1 and the lower part is heated to a low temperature by the second heater 2. After the wafer is transported into the reactor 15, a heat treatment process is performed while the gas required for wafer processing is injected through the door plate heat 6.

3 is a schematic diagram of a heat shield of a hot-walled RTP apparatus according to the present invention.

Referring to FIG. 3, the heat shield plate 16 according to the present invention is configured as silicon carbide coated with silicon carbide or a reflective high melting point metal, and is formed in a thin cylindrical shape so as to enter between a reactor and a heater. In this case, the heat shield plate may be formed in a plate shape. The heat shield plate 16 is moved from top to bottom and bottom by moving a tungsten wire 17 connected to the guide 15 surrounding the outer surface of the heat shield plate 16 by an air cylinder 18. Can move quickly to the top.

Hereinafter, a method of driving the heat shield plate when the heat treatment process is performed by using the RTP apparatus will be described in more detail with reference to FIGS. 2A to 2C.

First, when the wafer requiring heat treatment is loaded, the heat shield plate 14 is positioned between the first heater 1 and the upper furnace (hereinafter referred to as A position) as shown in FIG. 2A. Then, when the wafer is subjected to preheating, the heat shield plate 14 is positioned between the center of the reactor and the heat insulator 3 (hereinafter referred to as B position) as shown in FIG. 2B. Next, before the wafer-carrying boat moves from bottom to top for the heat treatment process, the heat exchanger plate 14 is moved back to the A position, and immediately afterwards, the boat is moved from bottom to top. Subsequently, when the boat moves from bottom to top, the heat shield plate 14 is positioned between the bottom and the second heater 2 (hereinafter referred to as C position) as shown in FIG. After completing the deduction, it will move back to the A position. The boat and heat shield 14 then move to the C position at the same speed. During post cooling, the heat shield plate 14 is moved from the C position to the A position and then cooled.

Therefore, according to the hot-wall type RTP apparatus according to the present invention as described above, by installing a heat shield plate that can move up and down between the heater and the reaction furnace to prevent radiant heating from the top to the bottom, the length of the transition sheet Can reduce the height of the whole machine. It is also possible to eliminate thermal bundle differences between the wafers placed on top of the boat and the wafers placed on the bottom.

The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical idea of the present invention.

Claims (4)

A reactor in which the inside is evacuated; A first heat exchanger positioned at an upper end of the reactor in order to heat the hot part of the reactor; A second heater positioned at a lower end of the outer surface of the reactor and a vertical bottom of the first heater to heat the low temperature part of the reactor; And a heat shield plate positioned between the first heater or the second heater and the reaction furnace and movable up and down. The hot-wall type rapid heat treatment apparatus according to claim 1, wherein the material constituting the heat shield plate is silicon carbide coated with silicon carbide (SiC) or a reflective high melting point metal. The hot-wall high speed heat treatment apparatus according to claim 1, wherein the heat shield plate is formed in a cylindrical shape or a plate shape. The hot-wall type heat treatment apparatus according to claim 1, wherein the heat shield plate is moved between the upper end and the lower end of the reactor by an air cylinder and a tungsten wire connected to a guide surrounding the outer surface of the heat shield plate.