JP3497317B2 - Semiconductor heat treatment method and apparatus used therefor - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor heat treatment method and an apparatus used therefor.

[0002]

2. Description of the Related Art When manufacturing a large scale integrated circuit (LSI) or a very large scale integrated circuit (VLSI), various heat treatment processes such as oxidation, annealing, diffusion and chemical vapor deposition (CVD) are required. As a heat treatment apparatus for performing these heat treatments, two types, a lamp heating type and a hot wall type, have been conventionally known. The above-mentioned lamp heating type apparatus is a single-wafer processing and is excellent in process controllability, but is inferior in productivity and temperature controllability. On the other hand, the hot wall type apparatus is attracting attention because it is a batch process, has excellent temperature controllability, and can process a large number of sheets.

However, in the above hot wall type device,
When performing rapid thermal processing at a high temperature (for example, 1000 ° C.), when a rapid temperature change is applied to the wafer, a slip line (a parallel line of unevenness is generated on the surface of the wafer due to thermal stress) occurs. It is necessary to preheat at about 700 ° C. In order to perform this two-step heating, a heat treatment apparatus as shown in FIG. 5, for example, has been proposed (JP-A-7-245298, etc.). In this apparatus, a wafer boat 2 holding a plurality of wafers 1 at a predetermined interval is used for a temperature region P in which a low temperature is set by a heater 3.
And the temperature region Q set to a high temperature by the heater 4 so that the low temperature heating and the high temperature heating can be efficiently repeated. In addition, 5 is a heat insulating exterior, 6 is a reaction tube, 7 is a reaction gas supply pipe, and 8 is an exhaust pipe. Further, 9 is a flange for sealing the bottom opening of the reaction tube 6, and 10 is a wafer boat elevating means.

[0004]

However, in the case where the two temperature regions P and Q are provided above and below as described above, if the two regions are too close to each other, it is not possible to properly maintain the temperature of each other. It is necessary to provide the buffer region R between the temperature regions P and Q. For this reason, it is difficult to make the temperature gradient steep when passing through the buffer region R, and there is a problem that the quality of the heat-treated product obtained tends to be insufficient. Moreover, in addition to such technical difficulty in temperature control, the height of the device becomes extremely high (for example, the device height is 3.5 m), and it is not easy to install it in a normal facility. is there. Further, when the wafer boat 2 is moved up and down, an airflow is generated in the reaction tube 6, and at that time, particles float in the reaction tube 6 and adhere to the surface of the wafer 1 to contaminate the wafer 1. Also,
Since the upper wafer 1 and the lower wafer 1 in the ascending / descending wafer boat 2 are exposed to high temperatures for a few seconds to a few tens of seconds, when the high-temperature processing time is short, the characteristics of the wafer 1 depend on the position of the wafer 1. There is also a problem that there is a difference in.

The present invention has been made in view of the above circumstances, and an object thereof is to provide an excellent semiconductor heat treatment method and an apparatus used therefor, in which the apparatus is relatively compact and wafer contamination by particles does not occur. To aim.

[0006]

In order to achieve the above object, a semiconductor heat treatment method according to claim 1 of the present invention is a method of heat treating a wafer using a batch type heat treatment apparatus, wherein the wafer is loaded. A first heating means for heating the wafer at a low temperature is provided around the reaction tube while maintaining a constant distance from the reaction tube, and the first heating means is provided between the reaction tube and the first heating means. A second heating means for heating the wafer at a high temperature is provided movably in the axial direction of the reaction tube, and when the wafer is heated at a low temperature, the second heating means does not overlap the reaction tube. By moving to a position outside the reaction tube and causing the low temperature heating from the first heating means to act on the reaction tube,
When the wafer is heated to a high temperature, the second heating means is moved to a position facing the reaction tube which overlaps the reaction tube so that the high temperature heating from the second heating means acts on the reaction tube. It is characterized by having done.

A semiconductor heat treatment method according to claim 2 of the present invention is a method of heat treating a wafer by using a batch heat treatment apparatus, wherein a reaction tube and a reaction tube are fixed around the reaction tube in which the wafer is loaded. A first heating means for heating the wafer at a low temperature in a state where the space between the reaction tube and the first heating means is provided, and a second heating means for heating the wafer at a high temperature between the reaction tube and the first heating means. Is movably provided in the axial direction of the reaction tube, and when the wafer is heated at a low temperature, the second heating means is moved to a position outside the first reaction tube which does not overlap the reaction tube. When the low temperature heating from the first heating means is applied to the reaction tube to heat the wafer at a high temperature, the second heating means is moved from the first reaction tube outside position to the reaction tube facing position. Pass it and move it to the position outside the second reaction tube on the opposite side. It is, at the time of the reaction tube facing position passing, is characterized in that so as to act on the reaction tube to high temperature heating from the second heating means.

Further, in the semiconductor heat treatment method according to claim 3 of the present invention, when the second heating means is passed through the reaction tube facing position when the wafer is heated to a high temperature, the above-mentioned facing position is applied at the facing position. It is characterized in that the second heating means is temporarily stopped.

According to a fourth aspect of the present invention, there is provided a batch type semiconductor heat treatment apparatus, which comprises a reaction tube into which a wafer is loaded,
A first heating means for low temperature heating of the wafer, which is provided around the reaction tube at a constant interval, and a second heating means for high temperature heating of the wafer, which is provided between the reaction tube and the first heating means. Second heating means moving the heating means and the second heating means along the reaction tube between a reaction tube facing position overlapping the reaction tube and a reaction tube outside position not overlapping the reaction tube. And a batch-type semiconductor heat treatment apparatus according to claim 5 of the present invention.
Between the reaction tube in which the wafer is loaded, the first heating means for low-temperature heating of the wafer which is provided around the reaction tube at a constant interval, and between the reaction tube and the first heating means. The second heating means provided for heating the wafer at high temperature and the second heating means are provided on the opposite side of the first reaction tube outside position not overlapping the reaction tube and the reaction tube facing surface position overlapping the reaction tube. Second heating means moving means for moving along the reaction tube between the second outside of the reaction tube and the second outside position of the reaction tube are provided.

That is, according to the present invention, conventionally, a plurality of temperature regions are provided in the apparatus and the wafer is moved to an appropriate temperature region, while the wafer is stopped at a fixed position.
By moving the second heating means provided between the wafer and the first heating means, a desired temperature change can be instantaneously applied. According to this method, since it suffices to provide a single heating area and a moving area for the second heating means, it is not necessary to set the apparatus long in the longitudinal direction, and compared with the apparatus of the type shown in FIG. A compact device can be assembled. Further, since the wafer is not moved, there is an advantage that the wafer is not contaminated by particles. Further, since high temperature heating and low temperature heating can be switched instantaneously, there is an advantage that throughput can be significantly increased.

Particularly, according to the method of claim 2 or the method of claim 3 of the present invention, the second heating means for high temperature heating is provided with the second heating means on the opposite side from the first outside position of the reaction tube. Since high temperature heating is performed while moving to a position outside the reaction tube, there is no difference in the time of high temperature heating depending on the position of the wafer. Therefore, a uniform heat history can be given to all the wafers, and the quality of the obtained wafers does not vary.

In the present invention, "high-temperature heating" and "low-temperature heating" are referred to as "high-temperature heating" when the two types of heating with different heating temperatures are sequentially performed on the wafer. The one with lower heating temperature is "low temperature heating"
Therefore, the two are relative concepts and do not distinguish between "high temperature" and "low temperature" in a specific temperature range.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described.

First, an example of the semiconductor heat treatment apparatus of the present invention is shown in FIG. In the figure, reference numeral 20 denotes a reaction tube, which is loaded with a wafer boat 2 for holding a plurality of wafers 1 at predetermined intervals, as in the conventional case, and a bottom opening is sealed by a flange 9. The wafer 1 is provided around the reaction tube 20.
The first heater 21 for heating the reaction tube 20 at a low temperature
Is provided in an annular shape with a constant space maintained, and on the outside thereof, a heat insulation outer casing 22 having a cylindrical shape having a ceiling 22 having an opening 22a is provided. The wafer boat 2 in the reaction tube 20 is stopped at the loading position shown in the figure from the start to the end of the process. Reference numeral 23 is an elevating means for elevating the wafer boat 2 together with the flange 9 when the wafer boat 2 is loaded / unloaded.
Can be moved from the illustrated position to the position indicated by the chain line. Further, 7 is a reaction gas supply pipe, and 8 is an exhaust pipe.

Between the reaction tube 20 and the first heater 21, a heat shield 24 having a cylindrical shape with a ceiling is provided so as to cover the reaction tube 20, and the inner peripheral surface thereof has the above-mentioned structure. Reaction tube 2
A second heater 25 for heating 0 to a high temperature is provided in a ring shape. And, on the upper surface of the heat shield 24,
A drive rod 26a hanging from a cylinder 26 provided above the heat insulating exterior 22 is connected to the heat shield 24.
However, it can be moved from the position shown in the figure to the position shown by the chain line through the opening 22a of the heat insulating exterior 22.
In addition, the opening 22a of the heat insulating exterior 22 and the heat shield 2
The gap with the outer peripheral surface of No. 4 is set to the minimum in consideration of the thermal efficiency of the first heater 21.

That is, the heat shield 24 completely covers the reaction tube 20 when it descends (the position shown in the drawing), and the second heater 25 for high temperature heating is arranged to face the reaction tube 20. This position is called "reaction tube facing position B". Thereby, the second heater 25 can heat the wafer 1 at a high temperature. Further, the heat shield 24 is exposed to the outside of the heat insulating sheath 22 when it rises (at the position of the chain line), and is in a state where it does not overlap the reaction tube 20 at all. This position is referred to as a "first reaction tube outside position A". As a result, the first heater 21 provided inside the heat insulating exterior 22 is arranged so as to directly face the reaction tube 20, and the first heater 21 performs low temperature heating.

The reaction tube 20 may be made of any conventionally used material, and quartz glass is usually used.

The first heater 21 and the second heater 25 are both composed of a heating source (not shown) consisting of a plurality of zones, each of which is individually temperature-controlled to heat the wafer 1. It is set to operate at the proper temperature. As the heating source, iron-chromium-aluminum alloy (trade name: Kanthal, manufactured by Kanthal), molybdenum disilicide (trade name: Kanthal Super, manufactured by Kanthal), and the like are preferable. The heat source is the heat insulating exterior 2
Along the inner wall of 2 and the inner wall of the heat shield 24, they are arranged in a spiral shape or a meandering shape (a continuous wire formed by folding a single linearly extending wire rod into a U shape at regular intervals). It is designed to surround 20 in a ring shape.

Further, the heat insulating material of the heat insulating sheath 22 may be any material conventionally used as a heat insulating material. For example, alumina ceramic, ceramic wool, quartz glass or the like is used.

On the other hand, the heat shield 24 containing the second heater 25 has an exterior 27 and an interior 28 as shown in FIG.
It has a double structure of and a gap 2 formed between them.
9 is formed in the cooling medium circulation path. Exterior 27
Both the interior 28 and the interior 28 are made of silicon carbide (SiC), and a gold coat 30 is provided on a portion of the outer surface of the exterior 27 facing the first heater 21 (see FIG. 1) in order to enhance a heat insulating effect. It has been subjected. The driving rod 26a connected to the upper surface of the heat shield 24 is hollow, and a cooling medium introducing pipe 31 for introducing a cooling medium gas into the gap 29 is inserted therein. There is. The cooling medium introduced from the cooling medium introduction pipe 31 is
9 and is discharged from the lower end surface of the heat shield 24. As the gas for the cooling medium, air, nitrogen, argon,
Helium or the like is used.

A procedure for activating the ion-implanted wafer 1 by rapid thermal processing using the above apparatus will be described. First, the heat shield 24 is moved to the first reaction tube outside position A indicated by a chain line in FIG. 1 and heated by the first heater 21, and the temperature inside the reaction tube 20 is 400 to
The output of the heater 21 is adjusted so as to be about 750 ° C.
In this state, the heat shield 24 is lowered and positioned at the reaction tube facing position B (the position shown by the solid line in FIG. 1) and heated by the second heater 25, and the temperature in the reaction tube 20 becomes 800. Heater 25 to be about 1100 ℃
Of the cooling medium and the flow rate of the cooling medium passing through the heat shield 24 are adjusted. And again, the heat shield 2
4 is moved upward and positioned at the position A outside the reaction tube.

Next, using the elevating means 23, the wafer boat 2 is lowered together with the flange 9 and lowered to the position shown by the chain line in FIG. 1, and a predetermined number of wafers 1 to be processed.
After loading, the elevating means 23 is raised to load the reaction tube 20 at a predetermined position. This state is, for example, 5
By holding the wafer 1 for about 40 minutes, the wafer 1 is preheated to about 400 to 750 ° C. by the first heater 21, and the stress on the surface of the wafer 1 is released. If necessary, the inside of the reaction tube 20 is evacuated or the required amount of inert gas is introduced during this period.

Next, a pushing operation is given to the cylinder 26 provided above the heat insulating exterior 22, and the rising heat shield 24 is instantly moved to the reaction tube facing position B, and the reaction tube 20 is heat shielded. The second heater 25 acts on the reaction tube 20 while being covered with the body 24. This state is, for example, 1
By holding the wafer 1 for about 5 to 180 seconds, the wafer 1 is heated to, for example, about 800 to 1100 ° C., and recovery of the crystal structure by activation is achieved. And again the heat shield 24
Is moved to the upper portion (initial position) and placed under preheating conditions, whereby the rapid thermal processing is completed. After that (when the inside of the reaction tube 20 is returned to atmospheric pressure when vacuuming is performed), the wafer boat 2 is taken out from the inside of the reaction tube 20 by the descending operation of the elevating means 23, and the processed wafer 1 is processed. Take out. Then, a new unprocessed wafer 1 is loaded on the wafer boat 2 and the series of steps described above are repeated,
Rapid thermal processing can be performed in a batch system with high throughput.

As described above, according to the above apparatus, the wafer 1
Since it is possible to switch between low temperature heating and high temperature heating while stopping at a fixed position, it is not necessary to provide two temperature regions and a buffer region between them, and a compact device can be assembled in the longitudinal direction. Further, since the wafer 1 is not moved, there is an advantage that the wafer 1 is not contaminated by particles. Further, since high temperature heating and low temperature heating can be switched instantaneously, there is an advantage that throughput can be significantly increased.

In the above example, the gas is used as the cooling medium introduced into the gap 29 of the heat shield 24, but a cooling liquid such as water may be used instead of the gas.
When the cooling liquid is used, for example, as shown in FIG. 3, the cooling liquid introducing pipe 3 is provided inside the drive rod 26a.
2 and the cooling liquid discharge pipe 33 are preferably provided. Then, it is preferable that these pipes 32 and 33 are connected to a cooling liquid circulation pipe 34 arranged in a spiral shape or a meandering shape in the gap 29, and the cooling liquid is circulated in these pipes to exert a heat insulating effect. Is. In addition, as a material of these pipes 32 to 34, stainless steel, copper and the like are suitable. When the cooling liquid circulation pipe 34 is provided, the cooling liquid circulation pipe 34 is not directly attached to the outer periphery of the interior 28, but is brazed to the metal plate 35 as shown in FIG. It is desirable to install it. That is, by mounting the metal plate 35 entirely on the interior 28, heat can be evenly taken from any part.

However, if the desired heating temperature can be sufficiently controlled only by controlling the temperature of the first heater 21 and the second heater 25, it is not necessary to introduce the cooling medium into the heat shield 24. In that case, it is not necessary to form the heat shield 24 in a double structure as shown in FIGS. 2 and 3, and it suffices that the heat shield 24 has a structure having a heat insulating effect, such as a gold coat on the outer peripheral surface. .

In the above example, the heat shield 24 containing the second heater 25 for high temperature heating (see FIG. 1) is movably provided inside the first heater 21, and the reaction is performed. The first reaction tube outside position A not overlapping the tube 20 and the reaction tube 2
0 is moved up and down with respect to the reaction tube facing position B that surrounds 0. However, as shown in FIG.
Is incorporated in the annular heat shield 24 ', and the heat shield 2
4'is suspended by the wire 40, and the first reaction tube outside position A
May be moved between the reaction tube facing position B and the second reaction tube outside position C opposite to the first reaction tube outside position A. In the figure, 41 is the heat insulating exterior 22.
The second heater 25 can be instantly moved to an appropriate height by winding up or unwinding the wire 40 with a plurality of winches provided on the upper surface of the. Reference numeral 42 is a heat reflection plate provided on the upper surface of the reaction tube 20, and usually ceramics such as alumina and silicon nitride, or refractory metals such as molybdenum and tantalum are used. Other parts are the same as those in FIG. 1, and the same parts are denoted by the same reference numerals. Then, the heat shield 2
4'is circular in shape, but the structure is the same as the heat shield 24 in the apparatus of FIG.

Similarly to the apparatus shown in FIG. 1, in the apparatus described above, by moving the second heater 25, the low temperature heating and the high temperature heating can be instantaneously switched while the wafer 1 in the reaction tube 20 is stopped. Therefore, the same effect as that of the device shown in FIG. 1 can be obtained. Moreover, in this device, the second heater 25 is movable between the first reaction tube outside position A, the reaction tube facing position B, and the second reaction tube outside position C, For example, by moving the second heater 25 as follows, it is possible to give a uniform thermal history to the wafers 1 arranged vertically.

That is, in the apparatus of FIG. 1, the second heater 25 is moved from the first position A outside the reaction tube to the position B facing the reaction tube for high temperature heating, and then returned to the position A outside the reaction tube. Therefore, the wafers 1 held below the wafer boat 2 are exposed to high temperatures for a shorter period of time, which may cause a difference in quality between the upper and lower wafers 1. On the other hand, in the device shown in FIG. 4, the second heater 2
After the low temperature heating is performed by the first heater 21 in a state in which No. 5 is positioned at the first reaction tube outside position A, the second heater 25 is passed through the reaction tube facing position B and the second heater 25 on the opposite side is passed. 2 to the position C outside the reaction tube, and then again passing through the position B facing the reaction tube to return to the original first position A outside the reaction tube.
By applying high temperature heating to the reaction tube 20 from the moving second heater 25, a uniform thermal history can be given to all the wafers 1 regardless of the upper and lower positions of the wafer 1. Therefore, there is no difference in the quality of the upper and lower wafers 1.

In the apparatus shown in FIG. 4, the wafer 1
The moving method of the heater 25 that makes the heat history uniform with respect to
The method is not limited to the above. For example, the second heater 25 may be temporarily stopped when the second heater 25 reaches the reaction tube facing position B while moving from the first reaction tube outside position A to the second reaction tube outside position C. You may After the temporary stop, the thermal history of the wafer 1 can be made uniform by moving it toward the second reaction tube outside position C again. Similarly, the second heater 25,
It is also possible to temporarily stop the process at the point of reaching the reaction tube facing position B while returning from the second reaction tube outside position C to the original first reaction tube outside position A. The temporary stop may be performed in only one of the reciprocating movements, or may be performed in both the reciprocating movements.

Further, in the present invention, the second heater 25
As means for raising and lowering the
In the apparatus of FIG. 4, the wire 40 by the winch 41 is used.
Although the winding mechanism is used, an appropriate mechanism such as a ball screw mechanism can be used in addition to these mechanisms.

Further, although the above example is a vertical type heat treatment apparatus, the apparatus of the present invention is not limited to the vertical type heat treatment apparatus, but can be applied to a horizontal type heat treatment apparatus.

Next, examples will be described.

[0034]

[Heat treatment conditions]

・ Number of processed wafers 1 (number of wafers held in wafer boat 2) ... 13 ・ Vacuum degree in reaction tube 20 ... 0.1 Torr ・ Preheating …… 700 ℃ × 10 minutes ・ High temperature heating …… 1000 ℃ × 120 seconds -Movement speed of the second heater 25 ... 0.5 m / min -Movement path of the second heater 25 ... First reaction tube position A (at this position for 10 minutes                                 Stop and heat at low temperature)                               Moved to the second position C outside the reaction tube.                                 (High temperature heating when passing through the counter tube facing position B)                               Moved to the first position A outside the reaction tube (                                 (High temperature heating when passing through the counter tube facing position B)

By the above rapid thermal treatment, 700 per day
It was possible to process one wafer 1, and the throughput could be increased by about 20 to 50% as compared with the apparatus shown in FIG.

[0036]

As described above, according to the first aspect of the present invention, the second heating means provided between the wafer and the first heating means is provided while the wafer is stopped at the fixed position. By moving it, it is possible to instantly give a desired temperature change. According to this method, since it is sufficient to provide a single temperature region and a moving region for the second heating means, it is not necessary to set the device long in the longitudinal direction, and a more compact device can be assembled as compared with the conventional one. be able to. Further, since the wafer is not moved, there is an advantage that the wafer is not contaminated by particles. Further, since high temperature heating and low temperature heating can be switched instantaneously, there is an advantage that throughput can be significantly increased. In particular, claim 2 of the present invention
According to the method of claim 3 or the method of claim 3, since the high temperature heating by the second heating means is performed while passing the reaction tube facing position from one side to the other side, the time of high temperature heating varies depending on the position of the wafer. Does not occur. Therefore, in addition to the effect of the invention according to the first aspect, a uniform heat history can be given to all the wafers, and a wafer of uniform quality can be obtained. According to the inventions according to claims 4 and 5 of the present invention, the special semiconductor heat treatment method can be effectively implemented.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing an embodiment of a heat treatment apparatus of the present invention.

FIG. 2 is a detailed explanatory view of a heat shield used in the above embodiment.

FIG. 3 is an explanatory view of a modified example of the heat shield.

FIG. 4 is a schematic configuration diagram showing another embodiment of the heat treatment apparatus of the present invention.

FIG. 5 is a schematic configuration diagram showing an example of a conventional heat treatment apparatus.

[Explanation of symbols]

1 wafer 2 wafer boat 20 reaction tubes 21 First heater 24 heat shield 25 Second heater 26 cylinders 26a drive rod A First position outside the reaction tube B Reaction tube facing position

Continuation of the front page (72) Inventor Atsushi Miyamoto 2-6-6 Chikko Shinmachi, Sakai City, Osaka Prefecture Daido Hokusan Co., Ltd. Sakai Plant (72) Hidehiko Oku 2-6-40 Tsukiko Shinmachi, Sakai City, Osaka Prefecture Stock Company Sakai Factory (56) Reference JP-A 1-319931 (JP, A) JP-A 63-283124 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21 / 205 H01L 21/22 H01L 21/31 H01L 21/324 C30B 35/00 C23C 14/00 C23C 16/00

Claims (5)

(57) [Claims] 1. A method of heat-treating a wafer using a batch type heat treatment apparatus, comprising heating the wafer at a low temperature around a reaction tube loaded with the wafer while keeping a constant distance from the reaction tube. A second heating means for heating the wafer at a high temperature is provided between the reaction tube and the first heating means so as to be movable in the axial direction of the reaction tube. When performing low temperature heating on the above wafer,
When the second heating means is moved to a position outside the reaction tube where it does not overlap the reaction tube and the low temperature heating from the first heating means is applied to the reaction tube to heat the wafer at a high temperature, A semiconductor heat treatment method, wherein the second heating means is moved to a position facing a reaction tube overlapping the reaction tube so that the high temperature heating from the second heating means acts on the reaction tube. 2. A method of heat-treating a wafer using a batch-type heat treatment apparatus, comprising heating the wafer at a low temperature around a reaction tube loaded with the wafer while keeping a constant distance from the reaction tube. A second heating means for heating the wafer at a high temperature is provided between the reaction tube and the first heating means so as to be movable in the axial direction of the reaction tube. When performing low temperature heating on the above wafer,
When the second heating means is moved to a position outside the first reaction tube where it does not overlap the reaction tube and the low temperature heating from the first heating means acts on the reaction tube to heat the wafer at a high temperature. The second heating means is moved from the first outside position of the reaction tube to the second outside position of the reaction tube passing through the reaction tube facing position, and when passing through the reaction tube facing position, A semiconductor heat treatment method, wherein high temperature heating from the second heating means is applied to the reaction tube. 3. When the wafer is heated at a high temperature, the second heating means is temporarily stopped at the facing position when passing the second heating means through the facing position of the reaction tube. Item 3. The semiconductor heat treatment method according to Item 2. 4. A reaction tube into which a wafer is loaded, first heating means for low-temperature heating of a wafer, which is provided around the reaction tube at a constant interval, the reaction tube and the first heating means. Second heating means for heating the wafer at high temperature provided between the heating means, and the second heating means are provided between a reaction tube facing position overlapping the reaction tube and a reaction tube outside position not overlapping the reaction tube. And a second heating means moving means for moving along the reaction tube, a batch type semiconductor heat treatment apparatus. 5. A reaction tube into which a wafer is loaded, a first heating means for low-temperature heating of a wafer, which is provided around the reaction tube at a constant interval, the reaction tube and the first heating means. The second heating means for heating the wafer at a high temperature provided between the heating means, the second heating means are provided at a first outside position of the reaction tube which does not overlap with the reaction tube and a facing position of the reaction tube which overlaps with the reaction tube. A batch-type semiconductor heat treatment apparatus comprising: a second heating means moving means for moving along the reaction tube between the second outside position of the reaction tube and the second outside position of the reaction tube.