JP2002208591A - Heat treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control a treatment temperature by measuring temperatures in a plurality of points inside a wafer face. SOLUTION: In a batch-system vertical hot wall-type heat treatment apparatus 10, radiation thermometers 50 which penetrate the sidewall of a process tube 11 are inserted between each upper wafer 1 and each lower wafer 1 which are held by a boat 21 in a treatment chamber 14, and central parts and peripheral parts on the rear surfaces of the wafers 1 are faced sequentially. The radiation thermometers 50 are connected to a temperature controller 33. The temperature controller 33 is constituted in such a way that a heater 32 is feedback-controlled by measuring the temperatures from the radiation thermometers 50. Consequently, the present actual temperature in the central parts and that in the peripheral parts of the wafers are measured respectively, and the heater is feedback-controlled. The temperature difference between the central parts and the peripheral parts of the wafers can be eliminated during a heat treatment or in a temperature rise and a temperature drop, and the uniformity of a treatment state distribution inside the wafer face can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a heat treatment apparatus (furnace).
ace), for example, a semiconductor integrated circuit device (hereinafter I
Called C. ) Is a heat treatment apparatus used not only for oxidation treatment, diffusion treatment and diffusion but also for heat treatment such as reflow and annealing for carrier activation and flattening after ion implantation for a semiconductor wafer (hereinafter, referred to as a wafer) in which the semiconductor wafer is manufactured. About effective technology to use.

[0002]

2. Description of the Related Art A batch type vertical hot wall heat treatment apparatus (hereinafter, referred to as a hot wall heat treatment apparatus) is widely used for heat treatment such as oxidation treatment and diffusion treatment in an IC manufacturing method. The hot wall type heat treatment apparatus includes a vertically installed process tube including an inner tube that forms a processing chamber into which a wafer is loaded, and an outer tube that surrounds the inner tube. A plurality of wafers are loaded into the inner tube from the furnace port at the lower end in a state in which the wafers are long aligned and held by the boat, and the wafer is heated by heating the processing chamber by the heater. Is configured to be subjected to a heat treatment.

In such a hot wall type heat treatment apparatus, a cascade thermocouple is arranged between an inner tube and an outer tube to measure the temperature in the processing chamber, and the heater is feedback-controlled based on the measurement result. Thus, the heat treatment is appropriately controlled. The basis of this control method is that in a hot wall heat treatment apparatus in which a wafer laid outside the process tube is heated by a heater laid outside the process tube, the entire atmosphere in the process chamber has a uniform temperature. The actual temperature of the wafer can be measured even with a cascade thermocouple arranged between the outer tube and the heater, and the heater is feedback-controlled based on the measurement result of the thermocouple to properly control the heat treatment on the wafer. It is possible to do.

[0004]

However, in such a hot wall type heat treatment apparatus, when the diameter of the wafer is increased (for example, in the case of a wafer having a diameter of 300 mm), the following problem occurs. A point occurs. That is, in a hot wall type heat treatment apparatus that heats from the side of the wafer, the difference in temperature between the central portion and the peripheral portion of the wafer is remarkable because the difference in distance from the heater becomes significant in the case of a large-diameter wafer. Therefore, the actual temperature at the center of the wafer is not measured by the temperature measurement by the cascade thermocouple disposed between the inner tube and the outer tube. That is, if the heater is feedback-controlled based on the result of the temperature measurement by the cascade thermocouple, the heat treatment for the wafer is not properly controlled.

[0005] In the hot wall type heat treatment apparatus, it is required to reduce the time of temperature rise and fall. However, in the hot wall type heat treatment apparatus, the rise in temperature and the decrease in temperature at the peripheral portion of the wafer are centered. Since the temperature is higher than that of the portion, if the temperature is raised and lowered in a short time, the temperature difference between the central portion and the peripheral portion of the wafer is widened. The temperature difference between the central portion and the peripheral portion of the wafer becomes more remarkable as the diameter of the wafer increases. Therefore, in a hot wall type heat treatment apparatus that performs feedback control of a heater based on a temperature measurement result by a thermocouple disposed between an inner tube and an outer tube, a temperature difference between a central portion and a peripheral portion of a wafer is absorbed. Therefore, it is necessary to set a margin, so that there is a limit in shortening the time for raising and lowering the temperature.

[0006] It is an object of the present invention to solve these problems of the prior art and to properly perform heat treatment by appropriately measuring the current actual temperature at a plurality of points in the radial direction of the substrate. An object of the present invention is to provide a heat treatment apparatus.

[0007]

In a heat treatment apparatus according to the present invention, a thermometer is inserted into a processing chamber through a side wall of a process tube, and is moved into and out of the processing chamber as the thermometer advances and retreats. The temperature of the substrate corresponding to a plurality of points in the radial direction of the substrate is measured.

According to the above-described means, since the present actual temperature at a plurality of points in the radial direction of the substrate in the processing chamber of the process tube is measured by the thermometer, it is laid outside the process tube to heat the processing chamber. The feedback control of the heater to be performed can be performed in accordance with the current actual temperature at a plurality of points in the radial direction of the substrate in the processing chamber. As a result, the heat treatment for the substrate can be appropriately controlled.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

In the present embodiment, as shown in FIG. 1, a heat treatment apparatus according to the present invention is a hot wall heat treatment apparatus (batch type vertical hot wall heat treatment apparatus) for performing a heat treatment step in an IC manufacturing method. And 10).

The hot wall type heat treatment apparatus 10 shown in FIG. 1 includes a vertical process tube 11 which is arranged vertically so that the center line is vertical and fixedly supported. The process tube 11 includes an inner tube 12 and an outer tube 13. The inner tube 12 is integrally formed into a cylindrical shape using quartz glass or silicon carbide (SiC).
Numeral 3 is integrally formed into a cylindrical shape using quartz glass. The inner tube 12 is formed in a cylindrical shape having upper and lower ends opened. The hollow portion of the inner tube 12 substantially serves as a processing chamber 14 into which a plurality of wafers held in a long and aligned state by a boat are loaded. Has formed. The lower end opening of the inner tube 12 substantially forms a furnace port 15 for taking in and out the wafer. Therefore, the inner diameter of the inner tube 12 is set to be larger than the maximum outer diameter (for example, three hundred mm) of the wafer to be handled.

The outer tube 13 is formed in a cylindrical shape whose inner diameter is larger than the outer diameter of the inner tube 12 and whose upper end is closed and whose lower end is opened. The outer tube 13 is concentrically covered with the inner tube 12 so as to surround the outer tube. . The lower end between the inner tube 12 and the outer tube 13 is hermetically sealed by a manifold 16 constructed in a multi-stage cylindrical shape, and the manifold 16 is used to replace the inner tube 12 and the outer tube 13. 12 and the outer tube 13 are respectively detachably attached. By supporting the manifold 16 on the machine frame 30 of the hot wall heat treatment apparatus, the process tube 11 is in a vertically installed state.

As shown in FIG. 2, an exhaust pipe 17 is connected to an upper portion of the side wall of the manifold 16, and the exhaust pipe 17 is connected to an exhaust device (not shown) to be connected to the processing chamber 1.
4 can be exhausted. The exhaust pipe 17 communicates with a gap formed between the inner tube 12 and the outer tube 13.
The exhaust path 18 is formed by the gap between the outer tube 13 and
The cross-sectional shape is configured as a circular ring having a constant width. Since the exhaust pipe 17 is connected to the manifold 16, the exhaust pipe 17 has a cylindrical hollow body and is arranged at the lowermost end of a vertically extending exhaust path 18.

A gas introduction pipe 19 is connected to a lower portion of the side wall of the manifold 16 so as to communicate with the furnace port 15 of the inner tube 12. The gas introduction pipe 19 is connected to a raw material gas supply device and a carrier gas supply device. (Neither is shown). The gas introduced into the furnace port 15 by the gas introduction pipe 19 flows through the processing chamber 14 of the inner tube 12, passes through the exhaust path 18, and is exhausted by the exhaust pipe 17.

A cap 20 for closing the lower end opening is brought into contact with the manifold 16 from below in the vertical direction. The cap 20 is constructed in a disk shape substantially equal to the outer diameter of the manifold 16, and
The elevator is configured to be vertically moved up and down by an elevator (not shown) installed vertically outside the car. A boat 21 is vertically supported on the center line of the cap 20 and supported.

The boat 21 has a pair of upper and lower end plates 22, 23.
And three holding members 24 which are provided between the end plates 22 and 23 and which are vertically arranged. A number of holding grooves 25 are formed in the three holding members 24 in the longitudinal direction. They are arranged at intervals and are engraved so as to face each other and open. The boat 21 is configured such that the wafers 1 are inserted between the holding grooves 25 of the three holding members 24 so that the plurality of wafers 1 are horizontally aligned and aligned with their centers aligned. . Between the boat 21 and the cap 20, there is disposed a heat insulating cap 26 in which a heat insulating material 27 is sealed. The heat insulating cap 26 supports the boat 21 in a state of being lifted from the upper surface of the cap 20. The lower end of the boat 21 is separated from the position of the furnace port 15 by an appropriate distance.

As shown in FIG. 1, the outside of the process tube 11 is entirely covered with a heat insulating cover 31. Inside the heat insulating cover 31, a heater 32 for heating the inside of the process tube 11 is provided. Tube 1
It is installed concentrically so as to surround the periphery of the three. The heat insulating cover 31 and the heater 32 are vertically installed by being supported by the machine frame 30 of the hot wall heat treatment apparatus. The heater 32 includes a first heater section 32a, a second heater section 32b, and a third heater section 32 in this order from the top.
c, a fourth heater section 32d and a fifth heater section 32e. The heater section 32a to 32e are configured to be sequenced independently and independently by a temperature controller 33.

As shown in FIG. 1, the heat insulating cover 3
A cooling air passage 41 through which the cooling air 40 flows is formed between the first tube 1 and the process tube 11 so as to entirely surround the process tube 11. Cooling air 40 is provided at the lower end of the heat insulating cover 31 through a cooling air passage 41.
The cooling air 40 supplied to the air supply pipe 42 is diffused all around the cooling air passage 41. An exhaust port 43 for discharging the cooling air 40 from the cooling air passage 41 is opened at the center of the ceiling wall of the heat insulating cover 31.
4 are connected. A first damper 45 is provided in the exhaust path 44,
Water-cooled radiator 46, second damper 47 and blower 48
Is interposed.

As shown in FIG.
Five radiation thermometers 50 are provided on the outside of the heat insulating cap 26.
a to 50e are arranged in a line in the vertical direction and are installed horizontally. The detectors of the five radiation thermometers 50a to 50e have a heat insulating cover 31, a heater 32, an outer tube 13, and an inner tube having a structure described later. 12 are inserted into the processing chamber 14 so as to be able to advance and retreat. Five radiation thermometers 50a to 50e are heaters 3
The two heater units 32a to 32e are arranged corresponding to the two heater units 32a to 32e, respectively, and their detectors are inserted between the vertically adjacent wafers 1 and 1 held by the boat 21, respectively.

The five radiation thermometers 50a to 50e transmit measurement results to the temperature controller 33, respectively.
The heater sections 32a to 32e of the heater 32 are feedback-controlled based on the measured temperatures from 0a to 50e. That is, an error between the target temperature of each of the heater sections 32a to 32e and the measured temperature of each of the radiation thermometers 50a to 50e is obtained, and if there is an error, feedback control for eliminating the error is executed. .

Here, five radiation thermometers 50a to 50e are used.
Are the same, and the specific structure will be described as the radiation thermometer 50 with reference to FIGS.

As shown in FIGS. 2 and 3, the radiation thermometer 50 is a holder 51 formed in a cylindrical shape with a flange.
The holder 51 is inserted and fixed to the heat insulating cover 31 in the radial direction. A guide pipe 52 made of quartz glass or silicon carbide or the like and formed into a cylindrical pipe shape is fitted on the center line of the holder 51, and the inner front end surface of the guide pipe 52 is fitted on the outer peripheral surface of the inner tube 12. Butted. An intermediate portion of the guide tube 52 is held by a sub holder 53 fixed to the outer peripheral surface of the outer tube 13. A linear actuator 54 is horizontally disposed behind the holder 51 outside the heat insulating cover 31 and is mounted on the machine frame 30. The linear actuator 54 reciprocates the main body 55 of the radiation thermometer 50 in the radial direction of the process tube 11. It is configured to be moved.

The main body 55 of the radiation thermometer 50 has a guide cylinder 5
A rear end portion of a waveguide rod 56 slidably fitted into the hollow portion of the guide cylinder 52 is supported.
To slide. The waveguide rod 56 is formed in a round bar shape using sapphire or quartz glass, and has a total reflection surface at the tip inserted through the guide cylinder 52 of the waveguide rod 56 and inserted into the processing chamber 14. 57 are formed. That is, as shown in FIG. 3, the total reflection surface 57 is formed by cutting the waveguide rod 56 so as to become thinner toward the front. In the present embodiment, the total reflection surface 57 is formed. Is the waveguide rod 56
Is set at an inclination angle の of 30 degrees with respect to the center line.
The total reflection surface 57 is arranged upward, is optically opposed to the lower surface of the upper wafer 1, and has a center line of the boat 21 whose incident-side optical axis is vertical, and It is arranged so as to coincide as much as possible with the center line of the waveguide bar 56 whose axis is horizontal. That is, the total reflection surface 57 of the waveguide rod 56 constitutes a detector for detecting the radiation 61 on the wafer 1.

The outer end of the waveguide rod 56 is optically opposed to a temperature measuring element (not shown) such as a thermocouple or a resistance element inside the main body 55, and an output based on the thermoelectromotive force of the temperature measuring element. Is the temperature controller 3 as the measured temperature of the radiation thermometer 50.
3 is transmitted. Note that in FIG.
Is a seal ring.

Next, the operation of the hot wall type heat treatment apparatus according to the above configuration will be described mainly with respect to temperature control.

As shown in FIG. 1, a boat 21 in which a plurality of wafers 1 are aligned and held is placed on a cap 20 so that the direction in which the wafers 1 are lined up is vertical, and is raised by an elevator. And is carried into the processing chamber 14 from the furnace port 15 of the inner tube 12 and the cap 2
It is placed in the processing chamber 14 while being supported by zero.
At this time, as shown in FIG. 3C, the distal ends of the waveguide rods 56 of the five radiation thermometers 50a to 50e are connected to the boat 2
The total reflection surface 57 of the waveguide rod 56 is drawn out of the boat 21 by being pulled out from between the adjacent wafers 1 and 1 above and below the wafer 1.

When the boat 21 is located at a predetermined position,
As shown in FIG. 3A, five radiation thermometers 5
The waveguide rods 0a to 50e, which are detectors, are advanced by the linear actuator 54 and inserted between the wafers 1 and 1 adjacent above and below the boat 21, respectively.
6 is disposed at a position facing the central portion of the lower surface of the wafer 1.

The inside of the process tube 11 is an exhaust pipe 17.
And the inside of the process tube 11 is heated to the target temperature (for example, 600 to 1200 ° C.) of the sequence control of the temperature controller 33 by the heater units 32 a to 32 e of the heater 32. At this time, the actual temperature rise inside the process tube 11 due to the heating of the heaters 32a to 32e and the respective heaters 32a to 32e
The error of the sequence control e from the target temperature is corrected by feedback control based on the measurement results of the radiation thermometers 50a to 50e.

When the diameter of the wafer 1 held by the boat 21 is 300 mm, the central portion of the wafer 1 may be measured by a cascade thermocouple installed between the inner tube and the outer tube. Since the actual temperature is not measured, only the feedback control of the heater 32 based on the temperature measurement result by the cascade thermocouple cannot control the heat treatment on the wafer 1 properly.

Therefore, in the present embodiment, the current actual temperature at the center of the wafer 1 is measured by five radiation thermometers 50a to 50e, and based on the measurement results, the five heater sections 32a to 32e are measured. By performing feedback control of 30e, the heat treatment on the wafer 1 is appropriately controlled.

That is, as shown in FIG. 3A, since the total reflection surface 57 of the waveguide rod 56 of the radiation thermometer 50 is opposed to the center of the wafer 1, it is heated to a high temperature. Radiation (heat ray) 61 from the center of the wafer 1 is incident on the waveguide rod 56 of the radiation thermometer 50 from the vertical direction, and is incident on the total reflection surface 57. Radiation 61 that is incident on the total reflection surface 57 of the waveguide rod 56 from the vertical direction is reflected in the horizontal direction by the total reflection surface 57 and is converted in direction. The radiation 61 whose direction has been changed in the horizontal direction propagates by repeating total reflection at the interface of the waveguide rod 56 and irradiates the temperature measuring element arranged on the main body 55. The radiation thermometer 50 emits radiation 61 to the temperature measuring element.
Is transmitted to the temperature controller 33.
As shown in FIG. 3A, stray light such as radiation 62 from the lower wafer 1 is totally reflected outward on the total reflection surface 57 and does not enter the waveguide rod 56.

If there is a difference between the measured temperature of the central portion of the wafer 1 transmitted from the radiation thermometer 50 and the target temperature for the sequence control, the temperature controller 33 performs measurement from the radiation thermometer 50. An error between the temperature and the target temperature of the sequence control of the heater 32 is obtained, and feedback control for eliminating the error is executed.

Incidentally, in the case of the wafer 1 having a diameter of 300 mm, a temperature difference and a temperature rise speed difference occur between the central portion and the peripheral portion of the wafer 1 with respect to the heater 32 due to the difference in perspective. If the heat treatment is performed with these differences remaining, the distribution of the heat treatment state of the wafer 1 (for example, the oxide film thickness distribution and the impurity diffusion distribution) becomes non-uniform between the central part and the peripheral part. Would. Therefore, in order to absorb the temperature difference and the temperature rise speed difference in the case of the wafer 1 having a diameter of 300 mm, in the conventional example, the sequence control for suppressing the temperature rise speed inside the process tube 11 by heating the heater 32 to be low. Is running.

However, in the present embodiment, the feedback control is performed by measuring the current actual temperature in the peripheral portion of the wafer 1 by the radiation thermometer 50, so that the central portion and the peripheral portion of the wafer 1 can be controlled. Since the temperature difference can be eliminated, the rate of temperature rise inside the process tube 11 due to the heating of the heater 32 can be set faster than in the conventional example. That is, when it is desired to measure the current actual temperature at the peripheral portion of the wafer by the radiation thermometer 50 and execute the feedback control, FIG.
As shown in (b), the waveguide rod 56 as a detector of the radiation thermometer 50 may be retracted by the linear actuator 54 and the total reflection surface 57 may be arranged on the periphery of the wafer 1.

When the temperature inside the process tube 11 becomes a stable state as a whole by the above temperature control, as shown in FIG.
The waveguide rod 56 as a detector of the linear actuator 5
By being retracted by a predetermined distance by 4, the tip of the waveguide rod 56 is arranged outside the boat 21. When the waveguide rod 56 is retracted outside the boat 21 in this manner, even when the source gas is supplied to the processing chamber 14 of the process tube 11 and the source gas flows between the wafers 1 and 1, The flow of the source gas can be prevented from being disturbed by the existence of the waveguide rod 56.

When the heat treatment under the above-described temperature control is performed and a preset heat treatment time has elapsed, the heating of the heater 32 is stopped by the sequence control of the temperature controller 33, and the cooling air 40 is supplied to the cooling air passage 41.
Will be distributed. That is, the cooling air 40 is supplied from the air supply pipe 42 and is exhausted from the exhaust port 43 by the exhaust force of the exhaust path 44. The cooling air 40 forcibly cools the inside of the process tube 11 by contacting the outer tube 13 of the process tube 11 and removing heat while flowing through the cooling air passage 41. Due to the forced cooling by the cooling air 40, the temperature inside the process tube 11 falls more rapidly than in the case of natural cooling.

Since the forced cooling by the cooling air 40 is also cooling from the outside of the process tube 11, the temperature difference between the central portion and the peripheral portion of the wafer 1 having a diameter of 300 mm due to the perspective difference is obtained. Or a difference in temperature drop rate. If forced cooling is continued with these differences remaining, the temperature distribution in the wafer surface becomes non-uniform, and the wafer 1 will be warped. Therefore, in order to absorb the temperature difference and the temperature drop rate difference in the case of the wafer 1 having a diameter of 300 mm, the temperature drop rate by the forced cooling is set low in the conventional example.

However, in the present embodiment, during forced cooling, the waveguide rod 56 of the radiation thermometer 50 is moved to the position shown in FIG.
And (b), the temperature difference between the central portion and the peripheral portion of the wafer 1 can be eliminated by feedback control based on the temperature measurement result of the radiation thermometer 50. In addition, the rate of temperature decrease inside the process tube 11 due to forced cooling can be set faster than in the conventional example. That is, the radiation thermometer 5
When the difference between the measured temperature at the center of the wafer 1 and the measured temperature at the periphery of the wafer 1 transmitted from 0 is within a predetermined range, the temperature controller 33 controls the cooling air of the cooling air 40. The flow speed in the passage 41 is increased, and if the flow speed is out of the predetermined range, the increase in the flow speed is stopped. The range of the predetermined temperature difference is a range in which warpage of the wafer 1 can be prevented.

As described above, when the temperature inside the process tube 11 has been lowered and a predetermined descent time has elapsed, the cap 20 is lowered to open the furnace port 15 and to be held by the boat 21. In this state, the group of wafers 1 is carried out of the process tube 11 from the furnace port 15. At this time, as shown in FIG. 3C, the tip of the waveguide rod 56 of the radiation thermometer 50 is disposed outside the boat 21. Thus, it is possible to prevent the waveguide rod 56 from becoming an obstacle for carrying out the boat 21.

According to the above embodiment, the following effects can be obtained.

1) A radiation thermometer is inserted into the processing chamber through the side wall of the process tube, and the temperature of the wafer held by the boat is measured during the processing, so that the in-situ (In-situ) is measured.
-Situ), the temperature of the wafer can be directly measured, so the heater for heating the process tube can be feedback controlled in real time based on the measurement result of the radiation thermometer, and the performance and reliability of the hot wall type heat treatment equipment can be improved. Can be enhanced.

2) By inserting the tip of the waveguide rod of the radiation thermometer inserted into the processing chamber between the vertically adjacent wafers held by the boat and positioning them at the center and the periphery of the wafer, respectively. Since the temperature of the center of the wafer can be directly measured by a radiation thermometer and the heater can be feedback-controlled based on the measurement result, the temperature between the center and the periphery of the wafer during heat treatment, temperature rise and temperature fall, etc. The difference can be eliminated.

3) According to the above 1) and 2), the uniformity of the temperature distribution in the wafer surface can be greatly improved, so that the uniformity of the in-plane distribution of the processing state on the wafer after the heat treatment is greatly improved. In addition to this, it is possible to prevent the warpage of the wafer and to improve the quality and reliability of the IC.

4) By eliminating the temperature difference between the central portion and the peripheral portion of the wafer at the time of temperature rise and temperature decrease, the temperature rise / fall speed of the sequence control can be set faster and the target temperature of the sequence control can be increased. Since the arrival time and the stabilization time of the hot wall heat treatment apparatus can be greatly reduced, the temperature raising and lowering performance of the hot wall heat treatment apparatus can be greatly improved.

5) The waveguide rod of the radiation thermometer is slidably supported by being fitted into a guide tube penetrating the heat insulating cover, the outer tube and the inner tube, so that the side between the wafers horizontally supported by the boat is provided. Since the radiation thermometer can be inserted from the side, the temperatures of the central portion and the peripheral portion of the wafer can be respectively measured by the same radiation thermometer.

6) By forming an inclined surface at the tip of the waveguide rod of the radiation thermometer to form a total reflection surface, the detector end of the waveguide rod inserted between the wafers is optically attached to the lower surface of the wafer. Therefore, the radiation on the lower surface of the wafer can be properly incident on the waveguide rod, and thus the actual actual temperature of the wafer can be accurately measured by the radiation thermometer.

7) Radiation at the center of the wafer is guided by positioning the optical axis of the total reflection surface formed of the inclined surface formed at the tip of the waveguide rod of the radiation thermometer at the center of the lower surface of the wafer. Since the light can be properly incident on the rod, the current actual temperature at the center of the wafer can be accurately measured by the radiation thermometer.

8) By retreating the waveguide rod of the radiation thermometer in the radial direction during the heat treatment of the wafer, it is possible to prevent the heat treatment conditions such as the flow of the source gas between the temperature measurement target wafers during the heat treatment from changing. Can be prevented.

9) Further, the radiation thermometer is retracted in the radial direction when the boat is carried into and out of the processing chamber, thereby preventing the radiation thermometer from obstructing the loading and unloading of the boat. be able to.

It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various changes can be made without departing from the gist of the present invention.

For example, the heater may be feedback-controlled by using a radiation thermometer for measuring the current actual temperature at the central portion and the peripheral portion of the wafer in combination with a cascade thermocouple.

The radiation thermometer is not limited to the radiation thermometer of the above embodiment, but may be a radiation thermometer using an optical fiber or another optical system.

The heat treatment is not limited to oxidation treatment, diffusion treatment and diffusion, but is not limited to reflow and annealing treatment for carrier activation and flattening after ion implantation, but may be heat treatment such as film formation treatment.

The substrate to be processed is not limited to a wafer, but may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

The present invention is not limited to the batch type vertical hot wall type heat treatment apparatus, but also the batch type horizontal hot wall type heat treatment apparatus and the vertical and horizontal hot wall type reduced pressure CVD.
The present invention can be applied to any heat treatment apparatus such as an apparatus.

[0056]

According to the present invention, the heat treatment can be properly executed by appropriately measuring the current actual temperature.

[Brief description of the drawings]

FIG. 1 is a front sectional view showing a hot wall heat treatment apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged sectional view showing a main part thereof.

FIG. 3 is a plan view showing the operation of the radiation thermometer;
(A) shows the temperature measurement at the center of the wafer, (b) shows the temperature measurement at the periphery of the wafer, and (c) shows the evacuation.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 10 ... Hot wall type heat treatment apparatus (batch type vertical hot wall type heat treatment apparatus), 11
... process tube, 12 ... inner tube, 13 ... outer tube, 14 ... processing chamber, 15 ... furnace port, 16 ... manifold, 17 ... exhaust pipe, 18 ... exhaust path, 19 ... gas introduction pipe, 20 ... cap, 21 ... Boats, 22 and 23 end plates, 24 holding members, 25 holding grooves, 26 heat insulating caps, 27 heat insulating materials, 30 machine frames, 31 heat insulating covers,
32: heater, 32a to 32e: heater section, 33: temperature controller, 40: cooling air, 41: cooling air passage,
42 air supply pipe, 43 exhaust port, 44 exhaust path, 45 first damper, 46 water cooling radiator, 47 second damper,
48 blower, 50 radiation thermometer, 50a to 50e radiation thermometer, 51 holder, 52 guide tube, 53 sub holder, 54 linear actuator, 55 body, 5
6: waveguide rod, 57: total reflection surface, 58: seal ring, 6
1 ... radiation (heat ray), 62 ... radiation (stray light).

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) G01J 5/10 G01J 5/10 C H01L 21/22 501 H01L 21/22 501N 511 511Q 21/324 21/324 TF term (reference) 2G066 AA06 AC01 AC11 BA42 BB01 BC11 CA01 4K056 AA09 BA01 BB06 CA18 FA12 4K061 AA01 BA11 CA08 DA05 FA07 GA06 5F045 AA06 DP19 EB02 GB01 GB15

Claims (1)

[Claims] 1. A thermometer penetrates a side wall of a process tube and is inserted into a processing chamber. When the thermometer advances and retreats, a temperature corresponding to a plurality of points in a radial direction of the substrate carried into the processing chamber. A heat treatment apparatus characterized in that it is configured to measure the temperature.