KR101002258B1 - Semiconductor manufacturing apparatus and substrate processing method - Google Patents

Abstract

This invention provides the semiconductor manufacturing apparatus and substrate processing method which can reduce the circumferential temperature difference of a board | substrate, and can continue processing a board | substrate even if a defect occurs in a temperature sensor.

When the semiconductor manufacturing apparatus 1010 flows cooling gas to the reaction tube 1014 which processes the wafer 1400, the heater 1052 which heats the reaction tube, the exhaust pipe 1082, and the exhaust pipe 1082, The pressure sensor 1092 which detects the pressure value in the exhaust pipe 1082, and the control unit 1200 which controls the heater 1052 and the cooling gas exhaust apparatus 1084, and processes the wafer 1400, The control unit 1200, On the basis of the measured values obtained by acquiring in advance the average values of the plurality of second temperature detectors 1064 for detecting the state of the periphery of the wafer 1400 and the measured values of the first thermocouple 1062 for detecting the state of the center of the substrate. The heater 1052 and the cooling gas exhaust device 1084 are controlled.

Indexer Cooling Gas Exhaust System, Cooling Gas Channels

Description

 Semiconductor manufacturing apparatus and substrate processing method {SEMICONDUCTOR MANUFACTURING APPARATUS AND SUBSTRATE PROCESSING METHOD}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a substrate processing method and a semiconductor manufacturing apparatus for processing a substrate such as a semiconductor wafer. In particular, in a thermocouple for measuring a temperature in the vicinity of a substrate included in a heat treatment apparatus, a plurality of thermocouples are provided in the circumferential direction of the substrate. The present invention relates to a substrate processing apparatus and a semiconductor manufacturing apparatus for improving the temperature difference in the circumferential direction of the substrate by controlling based on values detected by the plurality of thermocouples.

Further, by applying correction values to a plurality of thermocouples, even if a failure occurs in one of the plurality of thermocouples, the substrate processing apparatus for predicting the temperature that the thermocouple can detect from the correction value of the defective thermocouple and continuing the control, and A semiconductor manufacturing apparatus.

For example, Patent Document 1 discloses a deviation between the temperature of the substrate end portion and the temperature of the center portion, and the temperature of the substrate edge portion and the center portion generated when the heating temperature of the substrate is changed within a predetermined time. Disclosed is a substrate processing apparatus that obtains a change temperature amount N for realizing a desired average temperature deviation M using a normal deviation from temperature, controls the heating temperature for the substrate, and makes the film thickness formed on the substrate uniform. do.

However, even if the desired average temperature deviation M is realized, there is a limit to the uniformity of the film thickness formed on the substrate.

Moreover, in a semiconductor manufacturing apparatus, in order to detect the temperature in a furnace, several temperature sensors (temperature detection part, a thermocouple) are installed in the furnace which consists of quartz, for example, a long cylindrical shape, for example, The technique which detects the temperature inside and uses a temperature control apparatus based on the detected temperature, for example, is controlled so that a furnace may become the set temperature instructed from the host controller is known.

Further, in the semiconductor manufacturing apparatus, for example, the installation of a member made of quartz, such as a distance between the heater wire and the furnace due to a heater installation error, a so-called inner tube and an outer tube, which the semiconductor manufacturing apparatus has. The temperature difference may occur in the circumferential direction on the substrate in the furnace due to an error, a change in temperature characteristics due to a so-called boat prop, and the mechanism for rotating the boat to reduce such temperature difference. Known techniques are known.

However, in such a semiconductor manufacturing apparatus, since a temperature is detected only in a part of the circumferential direction of the substrate, there are cases where the temperature difference in the circumferential direction of the substrate cannot be improved.

In addition, in the conventional semiconductor manufacturing apparatus, when a failure occurs in any one of the plurality of temperature sensors, it is difficult to perform temperature control of the substrate, and there is a high possibility that the substrate film quality becomes defective, and the device operation rate deteriorates. Thus, there is a problem that the substrate processing may not be continued.

<Patent Document 1> International Publication No. 2005/008755 Pamphlet

An object of the present invention is to provide a semiconductor manufacturing apparatus and a substrate processing method which can reduce the circumferential temperature difference of a substrate and can continue processing the substrate even if a defect occurs in the temperature sensor.

A first feature of the present invention is a processing chamber for processing a substrate, a heating device for heating the processing chamber, a cooling gas flow path provided between the processing chamber and the heating device, and a cooling gas in the cooling gas flow path. A pressure detector for detecting a pressure value in a cooling gas exhaust passage communicating with the cooling gas flow path on the downstream side of the cooling gas flow path, and a control unit for controlling the heating device and the cooling device to process a substrate. The control unit acquires in advance the average value of the measured value of the first temperature detection unit for detecting the state of the center of the substrate and the measured value of the plurality of second temperature detection units located at the same height for detecting the state of the periphery of the substrate. And based on the acquired measurement value, it exists in the semiconductor manufacturing apparatus which controls the said heating apparatus and the said cooling apparatus.

Moreover, the 2nd characteristic of this invention is the pressure value in the processing chamber which processes a board | substrate, the heating apparatus which heats the said processing chamber, the cooling gas flow path provided between the said processing chamber and the said heating apparatus, and the said cooling gas flow path. And a pressure detector to measure the temperature, a temperature detector to detect the temperature of the substrate, and a controller to control the heating device and the cooling device to process the substrate, wherein the controller includes a first temperature detection point for detecting a temperature at the center of the substrate. The semiconductor manufacture which acquires the average value of the measured value and the measured value of the several detection point of the board | substrate circumferential direction of the 2nd temperature detection part which detects the temperature of a board | substrate peripheral part in advance, and controls the said heating apparatus and the said cooling apparatus based on the acquired measured value. Is in the device.

Moreover, the 3rd characteristic of this invention is the said cooling gas when a cooling gas flows by the cooling apparatus in the cooling gas flow path provided between the said processing chamber and the said heating apparatus, heating a process chamber which processes a board | substrate with a heating apparatus. The process of processing a board | substrate by controlling the said heating apparatus and the said cooling apparatus by a control part based on a pressure value in a flow path, and the measured value of the some 2nd detection part located in the same height which detects the state of the board | substrate edge part measured beforehand. The average value and the measured value of the first detection portion for detecting the state of the center of the substrate are acquired in advance, and the deviation between the average value of the second detection portion and the measured value of the first detection portion is obtained and stored in advance before performing the substrate processing step. The deviation and the deviation obtained when performing the substrate processing step are compared, and when the two deviations are different, It is a substrate processing method including the process of calculating a pressure correction value in the said cooling gas flow path based on a deviation, and correcting the said pressure value by this pressure correction value.

In addition, the fourth feature of the present invention is the average value of the measured values of the first temperature detection point for detecting the temperature of the center of the substrate and the measured values of the plurality of detection points in the circumferential direction of the substrate of the second temperature detection unit for detecting the temperature of the substrate peripheral portion. Obtaining a pressure correction value of a pressure value in a cooling gas flow path provided between the processing chamber for processing the substrate and the heating apparatus based on the obtained measured value, and correcting the pressure value by the pressure correction value; While the processing chamber is heated by the heating device, a cooling gas flows into the cooling gas flow path by the cooling device, and the control unit controls the heating device and the cooling device to process the substrate based on the pressure value after the correction. It exists in the substrate processing method to include.

Moreover, the 5th characteristic of this invention is a processing chamber which processes a board | substrate, the heating apparatus which heats the said processing chamber, the cooling gas flow path provided between the said processing chamber and the said heating apparatus, and the cooling device in the said cooling gas flow path. And a pressure detector which detects a pressure value in a cooling gas exhaust passage communicating with the cooling gas flow passage on the downstream side of the cooling gas flow path when the cooling gas flows, and a control unit that controls the heating device and the cooling device to process the substrate. The control unit may previously obtain an average value of the measured values of the first temperature detector detecting the state of the center portion of the substrate and the measured values of the plurality of second temperature detectors positioned at the same height to detect the state of the substrate peripheral portion. Obtaining a deviation between the measured value of the first temperature detector and the average value of the second temperature detector, and performing the substrate processing process The deviation previously stored is compared with the deviation obtained when the substrate processing step is performed. When the two deviations are different, the pressure correction value is calculated in the cooling gas flow path based on the obtained deviation, and the pressure correction value is calculated. The semiconductor manufacturing apparatus correct | amends the said pressure value by this.

Preferably, the second temperature detector is a plurality of temperature detectors disposed near the periphery of the substrate, and the first detector is disposed between the substrate holders supporting the substrate or above the substrate holder. Or a temperature detector disposed below the substrate holding tool.

Preferably, the deviation between the measured values and the set values of the plurality of second temperature detectors is obtained in advance and stored, and at least one of the second temperature detectors is in an abnormal state. The average value is calculated based on the deviation obtained in advance by the second temperature detection unit, and temperature control is performed by the average value.

Moreover, the 6th characteristic of this invention includes the control system which controls the film uniformity of a board | substrate, The said control system heats the processing chamber which processes a board | substrate with a heating apparatus, The said processing chamber and the said heating apparatus. Controlling the heating device and the cooling device by a controller to process a substrate based on a pressure value in the cooling gas flow path when the cooling gas flows into the cooling gas flow path provided between the substrate and the substrate; An average value of the measured values of the first detection unit for detecting the state of the central portion and the measured values of the plurality of second detection units located at the same height for detecting the state of the substrate edge measured in advance is obtained in advance, and the measured values and the first values of the first detection unit. 2 The deviation of the average value of the detection unit is obtained, and the deviation and the substrate processing step stored in advance before performing the substrate processing step are determined. Comparing the deviations obtained at the time of carrying out, and if the two deviations are different, performing a control including calculating a pressure correction value in the cooling gas flow path based on the obtained deviation, and correcting the pressure value by the pressure correction value. In a substrate processing apparatus.

Preferably, the control system obtains and stores a deviation between the measured values and the set values of the plurality of second temperature detectors in advance, and when the at least one detector of the second temperature detectors is in an abnormal state, the abnormal state is changed. The average value is calculated on the basis of the deviation previously obtained by the second temperature detector, and the temperature is controlled by this average value.

Further, a seventh aspect of the present invention includes a plurality of thermocouples for detecting a temperature in the vicinity of a wafer, wherein the plurality of thermocouples are provided in the circumferential direction with respect to the wafer, and are in a heat treatment apparatus for improving the temperature difference of the wafer circumference portion. .

Preferably, the method further includes a mounting portion that is programmed on a calculator by programming a method of uniformizing the wafer in-plane temperature distribution.

In addition, an eighth aspect of the present invention is to detect the temperature in the vicinity of the wafer, obtain a plurality of thermocouples provided in the vicinity of the wafer and correction values of the plurality of thermocouples, and a failure occurs in any one of the thermocouples. In this case, the heat treatment apparatus includes a control unit (control device) that predicts an output of a thermocouple in which a failure occurs among the plurality of thermocouples based on correction values obtained from the plurality of thermocouples, and performs control based on the prediction.

Further, preferably, the control unit (control device) has a mounting portion that is programmed on the calculator by programming a direction for predicting the output of the thermocouple in which a failure occurs among the plurality of thermocouples.

According to the present invention, it is possible to provide a semiconductor manufacturing apparatus and a substrate processing method which can reduce the circumferential temperature difference of the substrate and can continue the substrate processing even if a defect occurs in the temperature sensor.

EMBODIMENT OF THE INVENTION Next, embodiment of this invention is described according to drawing.

1-7, the semiconductor manufacturing apparatus 1010 which concerns on the 1st aspect to which this invention is applied is shown.

As shown in FIG. 1, the semiconductor manufacturing apparatus 1010 has a crack tube 1012, and the crack tube 1012 consists of heat resistant materials, such as SiC, for example, and an upper end is closed and an opening is opened in a lower end. It has a cylindrical shape to have. Inside the crack tube 1012, a reaction tube 1014 used as a reaction vessel is provided. The reaction tube 1014 is made of a heat resistant material such as, for example, quartz (SiO ₂ ), has a cylindrical shape having an opening at a lower end thereof, and is disposed concentrically in the crack tube 1012.

The supply pipe 1016 and the exhaust pipe 1018 of the gas which consist of quartz, for example are connected to the lower part of the reaction tube 1014. An introduction member 1020 having an inlet for introducing gas is provided in the supply pipe 1016, and the supply pipe 1016 and the introduction member 1020 are formed along the reaction tube 1014 side from the lower portion of the reaction tube 1014. For example, it protrudes in the shape of a capillary tube, and reaches inside the reaction tube 1014 at the ceiling of the reaction tube 1014.

In addition, the exhaust pipe 1018 is connected to an exhaust port 1022 formed in the reaction tube 1014.

The supply pipe 1016 flows gas into the inside of the reaction tube 1014 from the ceiling of the reaction tube 1014, and the exhaust pipe 1018 connected to the lower portion of the reaction tube 1014 receives exhaust gas from the lower portion of the reaction tube 1014. Used. The reaction tube 1014 is supplied with a processing gas used in the reaction tube 1014 via an introduction member 1020 and a supply tube 1016. The gas supply pipe 1016 is connected to a mass flow controller (MFC) 1024 used as a flow control means for controlling the flow rate of the gas, or a water generator not shown. The MFC 1024 is connected to a gas flow rate control unit 1202 (gas flow rate control device) included in the control unit 1200 (control device), and supplies the gas or water vapor H supplied by the gas flow rate control unit 1202. The flow rate of ₂ O) is controlled, for example, by a predetermined predetermined amount.

The control unit 1200, together with the gas flow control unit 1202 described above, controls the temperature control unit 1204 (temperature control unit), the pressure control unit 1206 (pressure control unit), and the drive control unit 1208 (drive control unit). Include. In addition, the controller 1200 is connected to the upper controller 1300 and controlled by the upper controller 1300.

The exhaust pipe 1018 is attached with an APC 1030 used as a pressure regulator and a pressure sensor 1032 used as a pressure detecting means. The APC 1030 controls the amount of gas flowing out of the reaction tube 1014 based on the pressure detected by the pressure sensor 1032, and controls the inside of the reaction tube 1014 to be a constant pressure, for example.

In addition, the base 1034 made of quartz, for example, has a disc shape, and is used as a retainer, is attached to the opening formed at the lower end of the reaction tube 1014 via the O-ring 1036. do. The base 1034 can be attached to or detached from the reaction tube 1014, and hermetically seals the reaction tube 1014 while being mounted on the reaction tube 1014. The base 1034 is attached to the gravity direction upward surface of the seal cap 1038 which consists of a substantially disk shape, for example.

The seal cap 1038 is connected with a rotating shaft 1040 which is used as a rotating means. The rotary shaft 1040 rotates in response to drive transmission from a driving source (not shown), and is held by the quartz cap 1042 used as the retaining body, the boat 1044 and the boat 1044 used as the substrate holding member, The wafer 1400 is rotated. The speed at which the rotating shaft 1040 rotates is controlled by the controller 1200 described above.

In addition, the semiconductor manufacturing apparatus 1010 has a boat elevator 1050 which is used to move the boat 1044 in the vertical direction, and is controlled by the controller 1200 as described above.

On the outer circumference of the reaction tube 1014, a heater 1052 used as a heating means is arranged in a concentric shape. The heater 1052 is a temperature detector (1) in the first thermocouple (1062), the second thermocouple (1064), the third thermocouple (1066) so that the temperature in the reaction tube (1014) to the processing temperature set in the upper controller (1300). 1060 is controlled by the temperature control unit 1204 based on the temperature detected by the temperature detecting device.

The first thermocouple 1062 is used to detect the temperature of the heater 1052, and the second thermocouple 1064 is used to detect the temperature between the crack tube 1012 and the reaction tube 1014. Here, the second thermocouple 1064 may be provided between the reaction tube 1014 and the boat 1044 and may detect the temperature in the reaction tube 1014.

The third thermocouple 1066 is installed between the reaction tube 1014 and the boat 1044, and is installed at a position closer to the boat 1044 than the second thermocouple 1064 to detect a temperature near the boat 1044. do. In addition, the third thermocouple 1066 is used for measuring the uniformity of the temperature in the reaction tube 1014 in the temperature stabilizer.

2, the structure around the reaction tube 1014 is shown typically.

As described above, the semiconductor manufacturing apparatus 1010 includes a temperature detector 1060, and the temperature detector 1060 includes a first thermocouple 1062, a second thermocouple 1064, and a third thermocouple 1066. . In addition, as shown in FIG. 2, the temperature detector 1060 detects a temperature at the vicinity of the ceiling of the boat 1044 and the central thermocouple 1068 that detects a temperature at a substantially central position of the wafer 1400. A ceiling thermocouple 1070 is included. In addition, the lower thermocouple 1072 (refer FIG. 5) mentioned later may be provided in the semiconductor manufacturing apparatus 1010.

3 shows an example of a detailed configuration of the central thermocouple 1068.

As shown in FIG. 3, the central thermocouple 1068 is formed in an L-shape, for example, in order to measure the temperature near the central portion of the wafer 1400 having the same height as the third thermocouple 1066. As a thermocouple, a temperature measurement is output. In addition, before the semiconductor manufacturing apparatus 1010 starts processing the wafer 1400, the central thermocouple 1068 measures the temperature near the central portion of the wafer 1400 at a plurality of locations, and the semiconductor manufacturing apparatus 1010. When the wafer 1400 is processed, the wafer 1400 can be removed.

Since the central thermocouple 1068 is configured to be detached from the reaction tube 1014, when the boat 1044 is rotated or when the wafer 1400 is transferred to the boat 1044. By removing the central thermocouple 1068, the central thermocouple 1068 can be prevented from contacting other members. In addition, the central thermocouple 1068 is hermetically sealed to the seal cap 1038 via a joint.

An example of the detailed structure of the ceiling thermocouple 1070 is shown by FIG.

As shown in FIG. 4, the ceiling thermocouple 1070 has a so-called L-shape, is installed on the top of the boat 1044 and used to measure the temperature near the ceiling of the boat 1044, and outputs a temperature measurement value. . The ceiling thermocouple 1070 is installed above the boat 1044 top plate, unlike the central thermocouple 1068. For this reason, since the boat 1044 can be loaded or unloaded and the boat 1044 can be rotated, even when the semiconductor manufacturing apparatus 1010 processes the wafer 1400, In the state, the temperature near the ceiling of the boat 1044 can be measured. On the other hand, the ceiling thermocouple 1070 is to be hermetically sealed via the joint to the seal cap 1038 similarly to the central thermocouple 1068.

An example of the detailed structure of the lower thermocouple 1072 is shown by FIG.

As shown in FIG. 5, the lower thermocouple 1072 has a so-called L-shape, is installed between the insulation plates below the boat 1044, and used to measure the temperature in the vicinity of the lower portion of the boat 1044 to measure temperature. Output The lower thermocouple 1072 is located at a position above the heat insulating plate located at the uppermost position of the plurality of heat insulating plates instead of being installed at a position between the heat insulating plates adjacent to each other in the vertical direction among the heat insulating plates provided under the boat 1044. You may install in the lower position of the heat insulation board located in the lowermost part of the heat insulation board of the.

Since the lower thermocouple 1072 is loaded or unloaded like the boat 1044, even when the semiconductor manufacturing apparatus 1010 processes the wafer 1400, the temperature of the lower portion of the boat 1044 can be measured as it is. have. On the other hand, the lower thermocouple 1072 is hermetically sealed to the seal cap 1038 via a joint.

In the semiconductor manufacturing apparatus 1010 comprised as mentioned above, an example of the operation | movement at the time of the oxidation and the diffusion process of the wafer 1400 in the reaction tube 1014 is demonstrated (refer FIG. 1).

First, the boat 1044 is lowered by the boat elevator 1050. Next, the plurality of wafers 1400 are held in the boat 1044. Subsequently, it heats by the heater 1052 and makes the temperature in the reaction tube 1014 into a predetermined | prescribed predetermined process temperature.

The inside of the reaction tube 1014 is filled with an inert gas in advance by the MFC 1024 connected to the gas supply pipe 1016, and the boat 1044 is raised by the boat elevator 1050 to raise the reaction tube ( 1014) to maintain the internal temperature of the reaction tube 1014 at a predetermined processing temperature. After maintaining the inside of the reaction tube 1014 at a predetermined pressure, the rotating shaft 1040 rotates the wafer 1400 held by the boat 1044 and the boat 1044. At the same time, gas for processing is supplied from the gas supply pipe 1016 or water vapor is supplied from a moisture generator (not shown). The supplied gas descends the reaction tube 1014 and is evenly supplied to the wafer 1400.

In the reaction tube 1014 during the oxidation / diffusion process, the exhaust gas is exhausted through the exhaust pipe 1018, and the pressure is controlled by the APC 1030 so as to reach a predetermined pressure, and the oxidation / diffusion of the wafer 1400 for a predetermined time. Processing takes place. When the oxidation / diffusion process is completed, the gas in the reaction tube 1014 is replaced with an inert gas to transfer to the oxidation and diffusion process of the wafer 1400 in which the next process is performed among the wafers 1400 in which the process is continuously performed. At the same time, the pressure is set to atmospheric pressure, and then the boat 1044 is lowered by the boat elevator 1050, and the boat 1044 and the processed wafer 1400 are taken out from the reaction tube 1014.

The processed wafer 1400 on the boat 1044 taken out from the reaction tube 1014 is exchanged with the unprocessed wafer 1400, and is again lifted into the reaction tube 1014 and oxidized in the wafer 1400. • The diffusion process is performed.

In addition to the structure shown to FIG. 1 thru | or FIG. 5, the structure which the semiconductor manufacturing apparatus 1010 which concerns on the 1st form to which this invention is applied is provided typically is shown in FIG. According to these structures, the nonuniformity of the film thickness of the thin film formed in the processed wafer 1400 can be suppressed, and the film thickness of the formed thin film can be made uniform.

As shown in FIG. 6, the semiconductor manufacturing apparatus 1010 is equipped with the exhaust pipe 1082, and has the exhaust part 1080 (exhaust apparatus) which exhausts cooling gas. The exhaust pipe 1082 is used as a cooling gas exhaust path, and the base end side is connected to, for example, an upper portion of the reaction tube 1014, and the front end side is used in an exhaust facility such as a factory in which the semiconductor manufacturing apparatus 1010 is installed. The exhaust gas is connected to the exhaust gas via the exhaust pipe 1082.

In addition, the exhaust unit 1080 includes a cooling gas exhaust device 1084 made of, for example, a blower, and a radiator 1086. The cooling gas exhaust device 1084 is mounted on the front end side of the exhaust pipe 1082, and the radiator 1086 is mounted at a position between the proximal end of the exhaust pipe 1082 and the cooling gas exhaust device 1084. An inverter 1078 is connected to the cooling gas exhaust device 1084. For example, the inverter 1078 controls the number of revolutions of the blower. To control the flow rate.

Shutters 1090 and 1090 are provided on the upstream side and the downstream side in the direction in which the cooling gas of the radiator 1086 of the exhaust pipe 1082 flows, respectively. The shutters 1090 and 1090 are controlled by a shutter control unit (shutter control device) (not shown) to open and close.

At a position between the radiator 1086 and the cooling gas exhaust device 1084 of the exhaust pipe 1082, a pressure sensor 1092 used as a detection unit (detection device) for detecting the pressure in the exhaust pipe 1082 is provided. Here, as a position where the pressure sensor 1092 is provided, it is preferable to install in the position as close as possible to the radiator 1086 also among the exhaust pipes 1082 which connect the cooling gas exhaust apparatus 1084 and the radiator 1086. .

As described above, the control unit 1200 (control unit) includes a gas flow control unit 1202 (gas flow control unit), a temperature control unit 1204 (temperature control unit), and a pressure control unit 1206 (pressure control unit). And a drive control unit 1208 (drive control unit) (see FIG. 1), and a cooling gas flow rate control unit 1220 (cooling gas control unit) as shown in FIG. 6.

The cooling gas flow rate control unit 1220 includes a subtractor 1222, a PID calculator 1224, a frequency converter 1226, and a frequency indicator 1228.

The pressure target value S is input to the subtractor 1222 from the host controller 1300. In addition, in addition to the pressure target value S, the pressure value A measured by the pressure sensor 1092 is input to the subtractor 1222, and the deviation D which subtracted the pressure value A from the pressure target value S is output by the subtractor 1222. .

The deviation D is input to the PID operator 1224. In the PID operator 1224, a PID operation is performed based on the input deviation D, and the manipulated variable X is calculated. The calculated manipulated variable X is input to the frequency converter 1226, converted into a frequency W by the frequency converter 1226, and output. The output frequency W is input to the inverter 1078 and the frequency of the cooling gas exhaust device 1084 is changed.

The pressure value A from the pressure sensor 1092 is input into the subtractor 1222 at regular time or at predetermined time intervals, and the cooling gas is exhausted so that the deviation D between the pressure target value S and the pressure value A becomes 0 based on the pressure value A. Control of the frequency of the device 1084 continues.

Instead of calculating the frequency W by the PID operator 1224, the frequency setpoint T is input from the host controller 1300 to the frequency indicator 1228, and the frequency W is input from the frequency indicator 1228 to the inverter 1078. The frequency of the cooling gas exhaust device 1084 may be changed.

As described above, in the semiconductor manufacturing apparatus 1010, cooling is performed by flowing air used as a cooling medium between the inside of the heater 1052 and the reaction tube 1014 using the cooling gas exhaust device 1084. By using the mechanism to perform, the element wire which comprises the heater 1052, and the reaction tube 1014 are cooled, and temperature control is performed. For this reason, the temperature controllability of the wafer 1400 held in the reaction tube 1014 is good.

That is, the heat transfer includes heat transfer by radiation and heat transfer by transfer. In the semiconductor manufacturing apparatus 1010, only heat transfer by radiation is transferred to the wafer 1400, and the temperature of the wafer 1400 is transferred. Influences an increase, and most of heat transfer by transmission is air-cooled and radiated by the air which flows between the inside of the heater 1052 and the reaction tube 1014. For this reason, the output of the heater 1052 is increased in order to compensate for the amount of heat emitted by cooling of the air in the vicinity of the element wire of the heater 1052. And with the increase of the heater 1052 output, the element wire temperature of the heater 1052 becomes higher and radiant heat increases. Therefore, the heat transfer by radiation is much faster than the heat transfer by transfer. For this reason, the semiconductor manufacturing apparatus 1010 which heats the wafer in the reaction tube 1014 by radiation heat has good temperature controllability.

In addition, the temperature of the reaction tube 1014 also decreases with cooling by air. Then, when the temperature of the reaction tube 1014 decreases, heat transfer from the edge portion of the wafer 1400 to the reaction tube 1014 occurs. As a result, the temperature distribution of the wafer 1400 is lower in the edge portion than in the center portion, and the so-called convex shape in which the temperature of the edge portion is lower than the temperature in the center portion is obtained from the so-called concave temperature distribution in which the temperature of the edge portion is higher than the temperature in the center portion. It becomes the temperature distribution of 凸 型.

The film thickness of the thin film formed on the wafer 1400, for example, when the temperature distribution of the wafer 1400 is uniform, the film thickness of the edge portion becomes a concave shape thicker than the film thickness of the center portion. On the other hand, by controlling the temperature as described above, if the temperature distribution of the wafer 1400 is iron, the uniformity of the thickness of the wafer 1400 can be improved.

In the semiconductor manufacturing apparatus 1010, as described above, the front end side of the exhaust pipe 1082 is connected to an exhaust facility such as a factory in which the semiconductor manufacturing apparatus 1010 is installed, and reacts via the exhaust pipe 1082. Since the cooling gas is exhausted from the pipe 1014, the effect of the cooling by the cooling gas exhaust device 1084 may vary greatly depending on the exhaust pressure of the exhaust facility such as a factory. When the cooling effect by the cooling gas exhaust device 1084 varies, the temperature distribution on the surface of the wafer 1400 also affects the cooling gas exhaust device so that the exhaust pressure from the exhaust pipe 1082 becomes constant. 1084).

In addition, in the semiconductor manufacturing apparatus 1010, when maintenance, such as exchanging thermocouples, such as the 1st thermocouple 1062, has an error in the position which attaches the 1st thermocouple 1062, for example. There is a possibility that a difference occurs in the film thickness of the thin film formed of the wafer 1400 processed before maintenance and the wafer 1400 processed after maintenance. In addition, when there are a plurality of semiconductor manufacturing apparatuses 1010 of the same specification, there is a fear that a difference in the film thickness of the thin film formed in each semiconductor manufacturing apparatus 1010 occurs.

Therefore, in the semiconductor manufacturing apparatus 1010, further research is carried out, for example, before and after maintenance, and in order to improve the uniformity of the thin film formed between the some semiconductor manufacturing apparatus 1010 of the same specification.

That is, in the semiconductor manufacturing apparatus 1010, on the basis of the output from the second thermocouple 1064, the value of the wafer 1400 which is a value from the central thermocouple 1068 when the wafer 1400 is controlled to be a predetermined temperature. The central temperature and the temperature of the ceiling of the boat 1044, which is a value from the ceiling thermocouple 1070, are acquired. For example, after performing maintenance, a correction value for the pressure set value is calculated from these acquired data. . Hereinafter, this will be described in detail.

FIG. 7 is an explanatory diagram for explaining a configuration and method of correcting a set temperature using a central temperature correction value of the wafer 1400. As described above, the controller 1200 includes a wafer center temperature correction calculator 1240 (a wafer center temperature correction calculator).

Here, the case where the second thermocouple 1064 is set to 600 will be described as an example. The wafer center temperature correction calculation unit 1240 acquires an output value (wafer center temperature) of the central thermocouple 1068 and an output value (ceiling temperature) of the ceiling thermocouple 1070 when the second thermocouple 1064 is controlled. And the deviation from the output value (internal temperature) of the second thermocouple 1064, respectively.

At this time,

Internal Temperature-Wafer Core Temperature = Wafer Core Temperature Deviation

or,

Internal temperature-ceiling temperature = ceiling temperature deviation

Remember it. The pressure set value (differential pressure with atmospheric pressure) at that time is also stored at the same time. The set temperature is constant, the pressure set value is changed, and the data is obtained under a plurality of conditions.

For example, in the case where the set temperature is 600, the internal temperature is 600, and the wafer center temperature is 607. For example, the internal temperature is the temperature of the edge portion of the wafer 1400. As 607, a deviation occurs.

so,

By outputting the wafer center temperature deviation 600-607 =-7 to the host controller 1300 and correcting the set value, the center of the wafer 1400 can be changed to 600 using the host controller 1300.

An example of the acquired plural data is shown in FIG.

Next, calculation of the pressure correction value is demonstrated.

For example, the boat ceiling temperature correction value corresponding to the current boat ceiling temperature deviation t1, the current pressure set value p1 and p1 b1, and the measured pressure value of the positive side pp in the acquired data, and the boat ceiling temperature of the positive side If the correction value is tp and the negative pressure measurement value in the acquired data is pm and the negative boat side temperature correction value is tm, the pressure correction amount px is expressed by the following equations (1) and (1) according to the magnitudes of t1 and b1. Can be found as 2.

In other words,

If t1 <b1,

px = (b1-t1) * ｛(p1-pm) / (b1-tm)｝

for t1> b1,

px = (b1-t1) * ｛(pp-p1) / (tp-b1)}

You can get it by

Hereinafter, each of the case of t1 <b1 and the case of t1> b1 will be described with specific examples.

9 is an explanatory diagram for explaining the calculation of the pressure correction amount px when t1 < b1.

First, as b1-t1, the temperature deviation of the boat ceiling temperature deviation b1 acquired previously and the current boat ceiling temperature deviation t1 is calculated | required.

Next, as (p1-pm) / (b1-tm), the "current pressure set value p1 and the boat ceiling temperature deviation b1 corresponding to it" and "the negative pressure value pm and the corresponding boat ceiling part" from the data acquired previously are shown. From the relationship with temperature deviation tm ", the pressure correction amount for making a boat ceiling temperature deviation +1 is calculated | required.

In the example shown in FIG. 9, the boat ceiling temperature correction value corresponding to 300 Pa is -4, and it is No. in FIG. -6 of 4 is extracted.

Moreover, from the data acquired previously, the pressure set value p1 is 300 pa, and the boat ceiling temperature deviation b1 becomes -4.

In addition, the pressure set value pm is 500 pa, and in order to change the boat ceiling temperature deviation tm from -6 to -4 +2,

300 Pa (p1)-500 Pa (pm) =-200 Pa

The amount of pressure correction is required.

For example, the current pressure measurement is 300 Pa and the current boat ceiling temperature deviation obtained from the measurement result is -5.

In this case, first, the boat ceiling temperature correction value corresponding to the pressure set value currently used is used as a search key, and the closest boat ceiling correction values are obtained from the obtained plurality of data shown in Fig. 8 on the plus side and the minus side, respectively, from the search key. Select and perform calculation from the selected data.

From the above,

Pressure correction amount for +1 minute = -200 Pa / + 2 = -100 Pa /

Is obtained.

That is, since we want to correct (b1-t1) by +1,

+1 * (-100Pa /) =-100Pa

The pressure correction amount of is calculated.

FIG. 10 is an explanatory diagram for explaining the calculation of the pressure correction amount px when t1> b1.

First, the temperature deviation of the boat ceiling temperature deviation b1 acquired previously and the current boat ceiling temperature deviation t1 is calculated | required.

Next, as (pp-p1) / (tp-b1), from the data acquired beforehand, "the current pressure set value p1 and the boat ceiling temperature deviation b1 corresponding to it" and "the pressure value pp of the positive side in the acquired data" And the pressure correction amount for setting the boat ceiling temperature deviation to -1 from the relationship with the boat ceiling temperature variation tp corresponding thereto.

Here, for example, when the current pressure measurement value is 300 Pa and the current boat ceiling temperature deviation obtained from the measurement result is -3, according to the previously acquired data shown in FIG. 8, the pressure set point pp is 300 Pa and the boat ceiling temperature piece b1 is shown. Becomes -4.

In addition, the pressure set value p1 is 200 Pa, and the boat ceiling temperature deviation tp is -2.

Therefore, in order to change the temperature by -2 from -2 which is the boat ceiling temperature deviation tp to -4 which is b1 from the data acquired beforehand,

300 Pa (pp) -200 Pa (p1) = + 100 Pa

The pressure correction amount of is required.

That is, the boat ceiling temperature correction value corresponding to 300 Pa is -4, and the positive side shows No. -2 of 2 is detected.

From the above,

The pressure correction amount of +1 minute = -100 Pa / 2 = -50 Pa / is calculated | required.

In this example, we want to correct by (b1-t1) = -1,

A pressure correction amount of −1 * (− 50 Pa /) = + 50 Pa is calculated.

In the above, the pressure correction amount px has been described when either one of the boat ceiling temperature deviation t1 and the boat ceiling temperature correction value b1 is larger than the other, but it is not necessary to correct the case where t1 and b1 are the same value.

In the calculation of the pressure correction value described above, the boat is determined from the relationship between the detected pressure value on the positive side or the negative side, the boat ceiling temperature deviation corresponding thereto, the current pressure set value p1, and the boat ceiling temperature deviation b1 corresponding thereto. The reason why the pressure correction amount for increasing the ceiling temperature deviation by 1 is that the pressure correction amount is thought to change depending on the boat ceiling temperature.

For example, the pressure correction amount for changing the boat ceiling temperature correction value by +2 from -6 to -4, and the pressure correction amount for changing +2 from -4 to -2 is the change in the radiant heat from the element wire of the heater 1052, the wafer. The relationship between the heat transfer from the edge portion 1400 to the reaction tube 1014 and the heat transfer from the center portion of the wafer 1400 to the edge portion of the wafer 1400 is not necessarily the same.

Therefore, in the semiconductor manufacturing apparatus 1010 which concerns on this embodiment, in order to calculate a pressure correction amount from the deviation change situation of the boat ceiling temperature correction value which is closer, the boat ceiling temperature which is more current than the boat ceiling temperature variation corresponding to the current pressure setting value. When the deviation is low, the pressure correction amount is calculated using the negative boat ceiling temperature deviation and the pressure set value, and when the current boat ceiling temperature deviation is higher than the boat ceiling temperature deviation corresponding to the current pressure set value, the positive side The pressure correction amount is calculated using the boat ceiling temperature deviation and the pressure setpoint.

In the semiconductor manufacturing apparatus 1010 which concerns on the 1st aspect to which this invention comprised as mentioned above is applied, research is made to suppress the unevenness of the film thickness formed in the wafer 1400, Nevertheless, There was a problem that nonuniformity occurred in the formed thin film.

Moreover, in the semiconductor manufacturing apparatus 1010 which concerns on the 1st aspect to which this invention comprised as mentioned above is applied, it causes a temperature to detect only a part of the circumferential direction of the wafer 1400, and the circumferential direction of the wafer 1400 There was a problem that there could be a case where the temperature difference could not be improved.

In addition, in the semiconductor manufacturing apparatus 1010 which concerns on the 1st aspect to which this invention comprised as mentioned above is applied, if a defect generate | occur | produces in any one of a plurality of temperature sensors, it is difficult to control the temperature of the wafer 1400, and a wafer There was a problem that the processing of 1400 could not continue.

Therefore, in the semiconductor manufacturing apparatus 1010 which concerns on the 1st and 2nd embodiment of this invention mentioned later, the above-mentioned problem is solved by further independent research. EMBODIMENT OF THE INVENTION Hereinafter, the 1st and 2nd embodiment which concerns on embodiment of this invention is described.

11, the principal part of the semiconductor manufacturing apparatus 1010 which concerns on 1st Embodiment of this invention is shown.

In the semiconductor manufacturing apparatus 1010 which concerns on 1st Embodiment of this invention, the heater 1052 is arrange | positioned concentrically in the outer side of the reaction tube 1014 similarly to the 1st aspect to which this invention demonstrated above is applied, One thermocouple 1062, a second thermocouple 1064, and a third thermocouple 1066 are provided (see FIG. 1).

In the first aspect to which the present invention described above is applied, only one second thermocouple 1064 is provided in the circumferential direction of the wafer 1400. In contrast, in the first embodiment, a plurality of second thermocouples 1064 are provided.

That is, as shown in FIG. 11, the semiconductor manufacturing apparatus 1010 which concerns on 1st Embodiment is the 2nd thermocouple 1064a which is main (henceforth an internal main thermocouple 1064a), and the 2nd thermocouple which is a sub ( 1064b) (hereinafter referred to as internal sub-thermocouple 1064b) and two second thermocouples provided at positions between the internal main thermocouple 1064a and the internal sub-thermocouple 1064b in the circumferential direction of the wafer 1400 [1064b]. Hereinafter referred to as an inner side thermocouple 1064c and an inner side thermocouple 1064d. In addition, the 2nd thermocouple 1064 and the ceiling thermocouple may be integrally formed.

Here, the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d are, for example, a reaction tube 1014 and a boat 1044 (see FIG. 1). ) Is also used to detect the temperature in the reaction tube 1014. In addition, the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d are, for example, four in the vertical direction, such as four circles. It has several temperature detection points, respectively, and detects temperature with respect to several temperature detection points, respectively.

The inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d each preferably have the same number of temperature detection points, and the first In an embodiment, each has four temperature detection points. The plurality of temperature detection points of the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d each have the same position (same height) in the direction of gravity. It is preferable to be present, and by being at the same height in the direction of gravity, the accuracy of temperature control described later can be increased. That is, the temperature average value of the temperature detection points of the thermocouples 1064 at the same height is calculated to perform temperature control of the heater.

The third thermocouple 1066 is provided between the reaction tube 1014 and the boat 1044 and includes an internal main thermocouple 1064a, an internal sub thermocouple 1064b, an internal side thermocouple 1064c, and an internal side thermocouple 1064d. ) Is installed at a position closer to the boat 1044, and is used to detect a temperature at a position closer to the boat 1044.

In FIG. 12, the position arrange | positioned in the plane of the 2nd thermocouple 1064 is shown typically. As shown in FIG. 12, the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d have a wafer parallel to the surface of the wafer 1400. It is arrange | positioned at equal intervals in the circumferential direction of the 1400. That is, the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d are disposed on the same circumference and are formed of the second thermocouple adjacent to each other and the center of the circle. The angles are all substantially 90 degrees. In this manner, the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d are disposed at equal intervals in the circumferential direction of the wafer 1400, thereby providing the wafer 1400. At the periphery of, the average temperature can be measured.

13 illustrates a control method and a configuration for controlling the semiconductor manufacturing apparatus 1010. In the first aspect to which the present invention described above is applied, the semiconductor manufacturing apparatus 1010 has one second thermocouple 1064 and performs control using this one thermocouple. On the other hand, in the semiconductor manufacturing apparatus 1010 which concerns on 1st Embodiment, the value which averaged the temperature of the some 2nd thermocouple 1064 is used for control.

Specifically, as shown in FIG. 13, the output from the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d has an average value of the control unit 1200. It is input to the temperature calculating part 1230, these average values are calculated by the average temperature calculating part 1230, the average value is output by the temperature control part 1204 to the PID calculating part 1242, and the output of a PID calculating part is For example, it is used for control of the heater 1052 control.

That is, for example, the temperature is averaged by the temperature detection points of the same height detected by the plurality of second thermocouples 1064 and the like, and PID control is performed so that the deviation of the preset temperature set value becomes zero. For example, temperature control of the circumference of the wafer 1400 is performed.

As described above, when the boat 1044 rotates by averaging the temperature by the temperature detection points of the same height detected by the plurality of second thermocouples 1064 disposed in the circumferential direction and controlling the temperature. The temperature near the edge portion (outer peripheral portion) of the wafer 1400 can be predicted, and the edge portion of the wafer 1400 can be controlled to a more appropriate value.

In the semiconductor manufacturing apparatus 1010 which concerns on 1st Embodiment demonstrated above, since the average value from the temperature detection point of the same height as the some 2nd thermocouple 1064 is used for control, the some 2nd thermocouple 1064 is used. If one or more failures occur at a temperature detection point of the same height, the control is continued by averaging the outputs from the temperature detection points of the same height of the remaining normal second thermocouple 1064. In this case, since a temperature difference occurs in the circumferential direction of the wafer 1400, there is a fear that the edge portion of the wafer 1400 cannot be controlled at an appropriate temperature.

Therefore, in the second embodiment of the present invention to be described later, by independent research, even if a failure occurs in any one of the second thermocouples 1064, control can be continued.

In addition, in the semiconductor manufacturing apparatus 1010 which concerns on the 1st Embodiment of this invention, since structures other than the structure especially demonstrated above are the same as the 1st form to which this invention demonstrated above is applied, description is abbreviate | omitted.

Next, the semiconductor manufacturing apparatus 1010 which concerns on 2nd Embodiment of this invention is demonstrated.

14 illustrates a control method and a configuration for performing control in the semiconductor manufacturing apparatus 1010 according to the second embodiment of the present invention. In the semiconductor manufacturing apparatus 1010 which concerns on 2nd Embodiment, description is abbreviate | omitted about the same part as the semiconductor manufacturing apparatus 1010 which concerns on 1st Embodiment mentioned above.

The semiconductor manufacturing apparatus 1010 which concerns on 2nd Embodiment calculates the correction value with the set value which is a some temperature detection point of the some 2nd thermocouple 1064, and detects the some temperature of the 2nd thermocouple 1064 previously. When a failure occurs in any one of the points, the calculated value is used to predict and recover a temperature detected by a plurality of detection points of the second thermocouple 1064 in which the failure occurs.

That is, in the semiconductor manufacturing apparatus 1010 which concerns on 2nd Embodiment, the average value of the some temperature detection point output of the some 2nd thermocouple 1064 when it controls at a predetermined fixed temperature, its average value, and each agent The deviation (correction value) with the output of the some temperature detection point of 2 thermocouples 1064 is respectively acquired.

Then, at a plurality of temperature detection points of the second thermocouple 1064 in which a failure has occurred, a plurality of temperature detection points of the second thermocouple 1064 in which the failure has occurred, based on a correction value with a set temperature, is detected. By predicting the temperature that has been used and using the predicted value, it is possible to continue to control the edge portion of the wafer 1400 at an appropriate temperature, and the reproducibility of the film thickness and film quality of the formed thin film is improved.

It will be described in more detail with reference to FIG.

Here, the temperature calculated by averaging the temperatures detected by a plurality of temperature detection points of the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d is controlled to 600. For example,

As shown in FIG. 14, the operation storage unit 1250 of the control unit 1200 outputs from the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d. Are respectively entered. The set temperature is input to the operation storage unit 1250 from the host controller 1300. The average value calculated by the storage calculating unit 1250 is output to the PID calculating unit 1242, and the output from the PID calculating unit 1242 is used for controlling the heater 1052 or the like, for example.

In this example, since control is performed by setting the temperature calculated by averaging the temperature to 600, the value 600 is input from the host controller 1300 to the operation storage unit 1250 as the set temperature. In addition, in the following description, the output value from the internal main thermocouple 1064a is a "main output value", the output value from the internal sub thermocouple 1064b is "sub output value", and the output value from the internal side thermocouple 1064c is " Side output value 1 "and internal side thermocouple 1064d are set to" side output value 2. " On the other hand, the height of the temperature detection part of each thermocouple 1064 is made substantially the same.

The main output value is 600.0, the sub output value is 599.5, the side output value 1 is 602.0, and the side output value 2 is 598.5.

In the operation storage unit 1250, values input from the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d, respectively, and the input from the upper controller 1300. Based on the value, the calculation of the deviation (correction value) between the set value and the output value from each second thermocouple 1064 is performed.

That is, the correction value of the internal main thermocouple 1064a (hereinafter referred to as a "main correction value"), the correction value of the internal sub thermocouple 1064b (hereinafter referred to as "sub correction value"), and the correction value of the internal side thermocouple 1064c (hereinafter referred to as "main correction value"). , "Side correction value 1" and the correction value of the internal side thermocouple 1064d (hereinafter, referred to as "side correction value 2") are calculated as follows.

Main correction value = main output value-average value

Sub correction value = Sub output value-average value

Side correction value 1 = side output value 1-average value

Side correction value 2 = side output value 2-average value

More specifically,

Main correction value = 600.0-600 = 0.00

Sub correction value = 599.5-600.0 = -0.50

Side correction value 1 = 602.0-600 = 2.00

Side correction value 2 = 598.5-600 = -1.50

Operation is performed.

The contents calculated as described above are stored in the operation storage unit 1250.

Next, the case where a failure occurs in any one of the inner main thermocouple 1064a, the inner sub thermocouple 1064b, the inner side thermocouple 1064c, and the inner side thermocouple 1064d will be described. Here, the case where the defect generate | occur | produced in the inner side thermocouple 1064d is taken as an example.

If a failure occurs in the inner side thermocouple 1064d, the ambient temperature by the inner side thermocouple 1064d cannot be detected, and the average value from the four second thermocouples 1064 cannot be calculated. In the semiconductor manufacturing apparatus 1010 which concerns on 1st Embodiment demonstrated, control based on an average value becomes impossible.

Therefore, in the semiconductor manufacturing apparatus 1010 according to the second embodiment, the output value that has been outputted if no defect occurs in the internal side thermocouple 1064d by using the side correction value 2 stored in the operation storage unit 1250 in advance. In anticipation, the average value of the temperature detection units of the same height of the four second thermocouples 1064 is calculated.

In other words,

Estimated value of side output value 2 = set value + side correction value 2

Expected value of side output value 2, more specifically,

Estimated value of the side output value 2 = 600.0 + (-1.50) = 598.5

The average value of the temperature detectors having the same height of the four second thermocouples 1064 is calculated using.

Here, when a failure occurs in the inner side thermocouple 1064d, the average value of the temperature detection units having the same height of the four second thermocouples 1064 is

Average value = (expected value of main output value + sub output value + side output value 1 + side output value 2) / 4

Is calculated as:

In the above description, the case where a failure occurs in one of the temperature detectors of the same height of the four second thermocouples 1064 has been described as an example, but two of the temperature detectors of the same height of the four second thermocouples 1064 are described. In the case where a defect has occurred as described above, the average value is calculated in the same manner as described above. For example, when a failure occurs in the internal sub-thermocouple 1064b in addition to the internal side thermocouple 1064d, the temperature detection unit having the same height of the four second thermocouples 1064 using the expected value also for the sub output value. Calculate the average of.

In other words,

Expected value of sub output value = set value + sub correction value

Expect sub output as

(Expected value of main output value + sub output value + expected value of side output value 1 + side output value 2) / 4

The average value is calculated.

Next, the semiconductor manufacturing apparatus 1 which concerns on the 2nd aspect to which this invention is applied is demonstrated.

<Semiconductor Processing Apparatus 1>

FIG. 15 is a diagram showing an overall configuration of a semiconductor processing apparatus 1 according to a second aspect to which the present invention is applied.

FIG. 16 is a diagram illustrating the processing chamber 3 in a state where the boat 14 and the wafer 12 shown in FIG. 15 are accommodated.

FIG. 17: is a figure which shows the structure of the 1st control program 40 which performs control with respect to the component part around the process chamber 3 shown in FIG. 15, FIG.

The semiconductor processing apparatus 1 is used as a semiconductor manufacturing apparatus, for example, is what is called a pressure reduction CVD apparatus which processes board | substrates, such as a semiconductor.

As shown in FIG. 15, the semiconductor processing apparatus 1 is located above the cassette stocker 102 and the cassette stocker 102 provided on the back side of the cassette handing unit 100 and the cassette handing unit 100. A buffer cassette stocker 104 provided, a wafer mover 106 provided on the back side of the cassette stocker 102, and a wafer mover 106 provided on the back side of the wafer mover 106 to convey the boat 14 on which the wafer 12 is set. It consists of the boat elevator 108, the process chamber 3 provided above the wafer mover 106, and the control part 2 (control apparatus).

<Processing Room (3)>

As shown in FIG. 16, the process chamber 3 shown in FIG. 15 is the hollow heater 32 used as a heating means, the exterior (outer tube, outer tube) 360, an inner tube, an inner tube. 362, gas introduction nozzle 340, furnace port cover 344, exhaust pipe 346, rotary shaft 348, for example, manifold 350 made of stainless steel, O-ring 351, cooling gas flow path ( 352, an exhaust path 354, an exhaust part 355 (exhaust device), and other components (to be described later with reference to FIG. 17), such as a processing gas flow rate control device, and a side portion of the heat insulating material ( 300-1), and the upper part is covered by the heat insulating material 300-2.

In addition, a plurality of heat insulating plates 140 are installed below the boat 14.

The outer tube 360 is made of, for example, quartz that transmits light, and is formed in a cylindrical shape having an opening at the bottom thereof.

The inner tube 362 is made of, for example, quartz that transmits light, is formed in a cylindrical shape, and is disposed on a concentric circle inside the outer tube 360.

Therefore, a cylindrical space is formed between the outer tube 360 and the inner tube 362.

The heater 32 is a thermocouple disposed between the four temperature adjusting portions (U, CU, CL, L) 320-1 to 320-4 and the outer tube 360, which can set and adjust temperature for each. Internal temperature sensors (TC in furnace) 324 such as thermocouples disposed in the outer tube 360 in correspondence with external temperature sensors 322-1 to 322-4 and temperature adjusting portions 320-1 to 320-4 such as the back. -1 to 324-4).

The internal temperature sensors 324-1 to 324-4 may be provided inside the inner tube 362, and may be provided between the inner tube 362 and the outer tube 360, and the temperature adjusting portion 320-3 is provided. It may be bent for each of 1 to 320-4, and may be provided between the wafer 12 and the wafer 12 so as to detect the temperature at the center of the wafer.

Each of the temperature adjusting portions 320-1 to 320-4 of the heater 32 radiates light for heating the wafer 12 from the periphery of the outer tube 360, for example. The wafer 12 is heated (heated) by light transmitted through the 360 and absorbed by the wafer 12.

The cooling gas flow path 352 is formed between the heat insulating material 300-1 and the outer tube 360 to allow a fluid such as a cooling gas to pass therethrough, and is supplied from the intake port 353 provided at the lower end of the heat insulating material 300-1. The cooling gas to be passed is passed upward of the outer tube 360.

The cooling gas is, for example, air or nitrogen (N ₂ ).

In addition, the cooling gas flow path 352 blows out cooling gas toward the outer tube 360 from between each of the temperature adjusting parts 320-1 to 320-4.

The cooling gas cools the outer tube 360, and the cooled outer tube 360 cools the wafer 12 set in the boat 14 from the circumferential direction (the outer peripheral side).

That is, the wafer 12 set in the outer tube 360 and the boat 14 is cooled from the circumferential direction (outer peripheral side) by the cooling gas passing through the cooling gas flow path 352.

Above the cooling gas flow path 352, an exhaust path 354 used as the cooling gas exhaust path is provided. The exhaust path 354 guides the cooling gas supplied from the inlet port 353 and passed through the cooling gas flow path 352 to the outside of the heat insulating material 300-2.

The exhaust path 354 is provided with an exhaust part 355 (exhaust device) for exhausting the cooling gas.

The exhaust unit 355 is used as a cooling device, has a cooling gas exhaust device 356 and a radiator 357 made of a blower or the like, and is cooled by the exhaust path 354 to be guided out of the heat insulating material 300-2. The gas is exhausted from the exhaust port 358.

The radiator 357 cools the cooling gas heated by cooling water or the like by cooling the outer tube 360, the wafer 12, and the like in the processing chamber 3.

On the other hand, in the vicinity of the inlet port 353 and the radiator 357, a shutter 359 is provided, respectively, and opening and closing of the cooling gas flow path 352 and the exhaust path 354 by a shutter control unit (shutter control device) (not shown). Is controlled.

As shown in FIG. 17, the processing chamber 3 includes a temperature control device 370, a temperature measuring device 372, a processing gas flow rate control device (mass flow controller; MFC) 374, and a boat elevator control device (elevator). Controller; EC) 376, pressure sensor PS 378, pressure regulator [APC; Auto Pressure Control (valve)] 380, process gas exhaust device (EP) 382 and inverter 384 are added.

The temperature control device 370 drives each of the temperature adjusting portions 320-1 to 320-4 according to the control from the control unit 2 (control device).

The temperature measuring device 372 detects the temperatures of the temperature sensors 322-1 to 322-4 and 324-1 to 324-4 and outputs them to the control unit 2 as temperature measurements.

The boat elevator control unit (EC) 376 drives the boat elevator 108 under control from the control unit 2.

As the pressure regulator (hereinafter, APC) 380, for example, APC, N ₂ Ballast controllers and the like are used.

As the EP 382, for example, a vacuum pump or the like is used.

The inverter 384 controls the rotation speed as a blower of the cooling gas exhaust device 356.

<Control part 2>

FIG. 18 is a diagram illustrating the configuration of the control unit 2 shown in FIG. 15.

As shown in FIG. 18, the control unit 2 includes a CPU 200, a memory 204, a display device, a display / input unit 22 (input device) including a touch panel and a keyboard, a mouse, and the like. Recording section 24 (recording apparatus).

That is, the control part 2 includes the component part as a general computer which can control the semiconductor processing apparatus 1.

The control part 2 executes the control program for pressure reduction CVD processing (for example, the control program 40 shown in FIG. 17) with these components, and controls each component part of the semiconductor processing apparatus 1, The reduced pressure CVD process described below is performed on the wafer 12.

<First control program 40>

Reference is again made to FIG. 17.

As shown in FIG. 17, the control program 40 includes a process control unit 400 (process control unit), a temperature control unit 410 (temperature control unit), a process gas flow control unit 412 (process gas flow rate control unit), Drive control unit 414 (drive control unit), pressure control unit 416 (pressure control unit), process gas exhaust unit control unit 418 (process gas control unit), temperature measuring unit 420 (temperature measuring unit), cooling It consists of the gas flow control part 422 (cooling gas control apparatus) and the temperature set value memory | storage part 424 (temperature set value memory | storage device).

The control program 40 is, for example, supplied to the control unit 2 via the recording medium 240 (FIG. 18), loaded into the memory 204, and executed.

The temperature setting value storage unit 424 stores the temperature setting value of the processing recipe for the wafer 12 and outputs it to the process control unit 400.

The process control section 400 controls the control program according to the user's operation on the display / input section 22 (FIG. 18) of the control section 2 or the procedure (process recipe) recorded in the recording section 24. Each component of 40 is controlled, and a pressure-sensitive CVD process is performed on the wafer 12 as described later.

The temperature measuring unit 420 receives the temperature measurement values of the temperature sensors 322 and 324 through the temperature measuring device 372 and outputs the measured values to the process control unit 400.

The temperature control unit 410 receives the temperature set value and the temperature measurement values of the temperature sensors 322 and 324 from the process control unit 400, and feedback-controls the power supplied to the temperature adjusting part 320, and the inside of the outer tube 360. The wafer 12 is heated to a desired temperature.

The processing gas flow rate control unit 412 controls the MFC 374 to adjust the flow rate of the processing gas or the inert gas supplied into the outer tube 360.

The drive control unit 414 controls the boat elevator 108 to lift and lower the boat 14 and the wafer 12 held therein.

In addition, the drive control unit 414 controls the boat elevator 108 and rotates the boat 14 and the wafer 12 held therethrough via the rotation shaft 348.

The pressure controller 416 receives the process gas pressure measurement in the outer tube 360 by the PS 378, performs control on the APC 380, and sets the process gas in the outer tube 360 to a desired pressure. .

The process gas exhaust device control unit 418 controls the EP 382 to exhaust the process gas or the inert gas inside the outer tube 360.

The cooling gas flow rate control unit 422 controls the cooling gas flow rate that the cooling gas exhaust device 356 exhausts via the inverter 384.

In addition, in the following description, when showing any one of several component parts, such as temperature adjustment parts 320-1 to 320-4, without specifying, only the temperature adjustment part 320 is described briefly. There is a case.

In addition, in the following description, although the number of component parts, such as temperature adjustment parts 320-1 to 320-4, may be shown, the number of component parts is illustrated for clarification and clarity of description, and this invention is provided. It is not intended to limit the technical scope of the present invention.

An O-ring 351 is disposed between the lower end of the outer tube 360 and the upper opening of the manifold 350 and between the furnace port cover 344 and the lower opening of the manifold 350. The space between the 360 and the manifold 350 is hermetically sealed.

An inert gas or process gas is introduced into the outer tube 360 via the gas introduction nozzle 340 positioned below the outer tube 360.

Above the manifold 350, an exhaust pipe 346 (FIG. 16) connected to the PS 378, the APC 380, and the EP 382 is attached.

The processing gas flowing between the outer tube 360 and the inner tube 362 is discharged to the outside via the exhaust pipe 346, the APC 380, and the EP 382.

As the APC 380 controls based on the pressure measurement in the outer tube 360 by the PS 378, it adjusts according to the instruction of the pressure control unit 416 so that the inside of the outer tube 360 is a preset desired pressure. do.

That is, when the inert gas is to be introduced to the atmospheric pressure inside the outer tube 360, the APC 380 adjusts the pressure in the outer tube 360 according to the instruction of the pressure control unit 416 so as to be the atmospheric pressure, or the outer When the process gas is to be introduced to process the wafer 12 with the inside of the tube 360 at a low pressure, the outer tube 360 is adjusted in accordance with the instruction of the pressure control unit 416 so as to achieve a desired low pressure.

The lower rotating shaft 348 of the boat 14 is connected to the boat 14 holding a plurality of semiconductor substrates (wafers) 12.

In addition, the rotating shaft 348 is connected to the boat elevator 108 (FIG. 15), and the boat elevator 108 raises and lowers the boat 14 at a predetermined speed according to control via the EC 376.

The boat elevator 108 also rotates the wafer 12 and the boat 14 at a predetermined speed via the rotation shaft 348.

The wafer 12 used as the object to be processed and used as the substrate is conveyed in the state loaded in the wafer cassette 490 (FIG. 15), and stored in the cassette delivery unit 100.

The cassette delivery unit 100 transfers the wafer 12 to the cassette stocker 102 or the buffer cassette stocker 104.

The wafer mover 106 takes the wafer 12 out of the cassette stocker 102 and loads it in multiple stages while being horizontal to the boat 14.

The boat elevator 108 raises the boat 14 loaded with the wafer 12 and guides it into the processing chamber 3.

In addition, the boat elevator 108 lowers the boat 14 loaded with the wafers 12 on which the processing is completed and takes them out of the process chamber 3.

<Temperature and Film Thickness of Wafer 12>

FIG. 19 is a diagram illustrating a shape of the wafer 12 to be processed in the semiconductor processing apparatus 1 (FIG. 15).

The surface of the wafer 12 (hereinafter, referred to simply as the wafer 12 as the surface of the wafer 12) has a shape as shown in FIG. 19 and is held horizontally with respect to the boat 14.

In addition, the wafer 12 is heated from the periphery of the outer tube 360 by the light which the temperature adjusting parts 320-1 to 320-4 radiated and transmitted through the outer tube 360.

Therefore, when the wafer 12 absorbs a lot of light and does not allow the cooling gas to flow in the cooling gas flow path 352, the temperature of the end of the surface of the wafer 12 reaches the temperature of the center portion. Higher than

In other words, by the temperature adjusting portions 320-1 to 320-4, the closer to the outer circumference of the wafer 12, the higher the temperature, and the closer to the center, the lower the temperature, the lower the center of the wafer 12. A bowl-shaped temperature deviation occurs over the wafer 12.

In addition, since process gases, such as a reaction gas, are also supplied from the outer peripheral side of the wafer 12, reaction speeds may differ in the edge part and center part of the wafer 12 according to the kind of film | membrane formed in the wafer 12. have.

For example, process gas, such as a reactive gas, is consumed at the end of the wafer 12 and reaches the center of the wafer 12 thereafter, and thus, at the center of the wafer 12, at the end of the wafer 12. In comparison with this, the concentration of the processing gas is lowered.

Therefore, even if a temperature deviation does not occur between the end portion and the center portion of the wafer 12, for example, the thickness of the film formed on the wafer 12 due to the supply of the reaction gas from the outer peripheral side of the wafer 12. May become non-uniform at the edge part and the center part.

On the other hand, when the cooling gas passes through the cooling gas flow path 352, the wafer 12 set in the outer tube 360 and the boat 14 is cooled from the circumferential direction (outer peripheral side) as described above. That is, the process chamber 3 heats the temperature of the center part of the wafer 12 to the predetermined | prescribed set temperature (process temperature) by the temperature adjustment part 320, and passes a cooling gas to the cooling gas flow path 352 as needed. By cooling the outer peripheral side of the wafer 12, different temperatures can be set for each of the center and the end of the wafer 12.

In this way, in order to form a uniform film on the wafer 12, heating control (control including heating and cooling, etc.) for adjusting the film thickness is made corresponding to the reaction rate for forming the film on the wafer 12 and the like. . As for heating control, the control part 2 controls the temperature adjustment part 320 of the heater 32 using the measured value of the internal temperature sensor 324, or the control part 2 controls the cooling gas flow rate control part 422, and It is at least one of controlling the cooling gas exhaust device 356 via the inverter 384.

<Summary of the reduced pressure CVD process by the semiconductor processing apparatus 1>

The semiconductor processing apparatus 1 is a semiconductor wafer 12 arranged at predetermined intervals in the processing chamber 3 by the control of the control program 40 (FIG. 17) executed on the control unit 2 (FIGS. 15 and 18). On the other hand, a Si ₃ N ₄ film, a SiO ₂ film, a polysilicon (Poly-Si) film and the like are formed by CVD.

Film formation using the processing chamber 3 will be further described.

First, the boat elevator 108 lowers the boat 14.

In the lowered boat 14, the wafer 12 to be processed is set to the desired number of sheets, and the boat 14 holds the set wafer 12. As shown in FIG.

Next, each of the four temperature adjusting portions 320-1 to 320-4 of the heater 32 heats the inside of the outer tube 360 in accordance with the setting, and the center of the wafer 12 is set to a predetermined value. Heat to temperature.

On the other hand, the cooling gas flows to the cooling gas flow path 352 according to a setting, and the wafer 12 set in the outer tube 360 and the boat 14 is cooled from the circumferential direction (outer peripheral side).

Next, the MFC 374 adjusts the flow rate of the gas to be introduced through the gas introduction nozzle 340 (FIG. 16), and introduces and fills the inert gas into the outer tube 360.

The boat elevator 108 raises the boat 14 and moves it in the outer tube 360 filled with an inert gas of a desired processing temperature.

Next, the inert gas in the outer tube 360 is exhausted by the EP 382 so that the inside of the outer tube 360 is in a vacuum state, and the boat 14 and the wafer 12 held therein are rotated by the shaft 348. It rotates through).

In this state, when the processing gas is introduced into the outer tube 360 via the gas introduction nozzle 340, the introduced processing gas rises in the outer tube 360 and is uniformly supplied to the wafer 12.

EP 382 exhausts the processing gas from the outer tube 360 during the reduced pressure CVD process via the exhaust pipe 346, and the APC 380 sets the processing gas in the outer tube 360 to a desired pressure.

As described above, the reduced pressure CVD process is performed on the wafer 12 for a predetermined time.

When the reduced pressure CVD process is completed, the processing gas inside the outer tube 360 is replaced by an inert gas, and further, the pressure is brought to normal pressure so as to proceed to the process for the next wafer 12.

Moreover, cooling gas flows into the cooling gas flow path 352, and the inside of the outer tube 360 is cooled to predetermined temperature.

In this state, the boat 14 and the processed wafer 12 held therein are lowered by the boat elevator 108 and taken out from the outer tube 360.

The boat elevator 108 raises the boat 14 hold | maintained by the wafer 12 used as the next pressure reduction CVD process object, and sets it in the outer tube 360. As shown in FIG.

The following reduced pressure CVD process is performed on the wafer 12 thus set.

On the other hand, the cooling gas can control the film thickness when flowing from before the processing of the wafer 12 to the end of the processing. When the boat 14 on which the wafer 12 is set is moved in the outer tube 360 and the outer tube 360 It is preferable to flow also when the boat 14 is taken out from inside).

As a result, the heat capacity of the processing chamber 3 prevents heat from remaining in the processing chamber 3 and fluctuates in temperature, and improves throughput.

In the film forming process described above, the heater 32 is controlled to maintain the central temperature of the wafer 12 at a predetermined temperature at a predetermined temperature, while the end (peripheral) temperature and the central temperature of the wafer 12 are controlled by the cooling gas. By controlling the temperature so as to have a temperature difference, the in-plane film thickness uniformity of the wafer 12 and, moreover, the film thickness uniformity between the surfaces can be improved without changing the film quality.

For example, Si ₃ N ₄ In the case of forming a CVD film such as a film, if the film is subjected to a film treatment while varying the processing temperature, the film's refractive index fluctuates corresponding to the process temperature, or when the film is processed with a lower processing temperature from a high temperature to a low temperature, the film has a high etching rate. This changes in response to the treatment temperature.

In addition, Si ₃ N ₄ In the formation of the film, when the film forming process is performed while lowering the processing temperature from a high temperature to a low temperature, the film changes from a film having a high stress value to a low film in response to the processing temperature.

Therefore, in the semiconductor processing apparatus 1, the control unit 2 controls the temperature of the outer tube 360 by controlling the temperature of the temperature adjusting portion 320 and the cooling gas flow rate passing through the cooling gas flow path 352. By controlling the in-plane temperature of the substrate such as the wafer 12, it is possible to control the uniformity of the film thickness formed on the substrate while preventing the film quality from changing.

<Exhaust Pressure and Film Thickness>

As described above, when the film is formed on the wafer 12 in the semiconductor processing apparatus 1, the control unit 2 uses the measurement value of the internal temperature sensor 324 to adjust the temperature adjusting portion of the heater 32 ( The heating control is performed by at least one of controlling the 320 or controlling the cooling gas exhaust device 356 via the cooling gas flow rate control unit 422 and the inverter 384. When the cooling gas flows through the cooling gas flow path 352, the cooling gas is exhausted from the exhaust port 358 by the exhaust part 355 via the cooling gas flow path 352 and the exhaust path 354. The exhaust port 358 is connected to an exhaust facility such as a factory (not shown). This exhaust facility draws cooling gas from the exhaust path 354 at the facility exhaust pressure, thereby exhausting the exhaust path 354.

Facility exhaust pressure is affected by the conductance caused by the piping distance from the exhaust facility to the exhaust port 358, the shape of the piping, the route of the piping, or the like, or the number of devices connected to the exhaust facility such as a factory. Therefore, there exists a difference for every exhaust facility, and the same exhaust facility may fluctuate.

When the facility pressure changes, even if the same amount of cooling gas is supplied, the amount of gas flowing through the cooling gas flow path 352 changes.

For example, if the facility exhaust pressure is changed from 200 Pa to 150 Pa, the flow rate of the cooling gas flowing through the cooling gas flow path 352 becomes small due to the influence of the fluctuation of the facility exhaust pressure.

On the other hand, if the facility exhaust pressure changes from 150 Pa to 200 Pa, the flow rate of the cooling gas which flows through the cooling gas flow path 352 will increase according to the influence which the facility exhaust pressure changed.

In this way, when the flow rate of the cooling gas flowing through the cooling gas flow path 352 changes due to the change in the facility pressure, the cooling capacity is influenced by flowing the cooling gas. For example, the center of the wafer 12 is previously predetermined. The outer tube 360 and the temperature control and cooling gas flow rate control based on the measurement by the internal temperature sensor 324 so that the set temperature (processing temperature) of the wafer 12 is lower than the processing temperature. The cooling performance from the circumferential direction with respect to the wafer 12 set in the boat 14 changes.

And when the cooling performance from the circumferential direction changes, for example, there exists a possibility that the edge part of the wafer 12 may become higher than processing temperature, and the problem that the reproducibility of the film thickness in the wafer 12 surface cannot be taken may arise. there was.

As described above, in the semiconductor processing apparatus 1 according to the second aspect to which the present invention is adapted, when the facility exhaust pressure is kept constant, the reproducibility of the film thickness of the wafer 12 is good, but the facility exhaust pressure is not constant. Otherwise, the reproducibility of the film thickness of the wafer 12 could not be taken and the film thickness could not be made uniform.

Therefore, in the semiconductor processing apparatus 1 according to the third aspect to which the present invention described below is applied, even if there is an unevenness or change in the exhaust pressure of the facility, an independent study is carried out so that the film thickness of the wafer 12 can be made uniform. have.

20 is a diagram illustrating a configuration of a semiconductor processing apparatus 1 according to a third aspect to which the present invention is applied.

The semiconductor processing apparatus 1 according to the third aspect to which the present invention is applied has, in addition to the configuration included in the semiconductor processing apparatus 1 according to the second aspect to which the present invention as shown in FIGS. 15 to 18 described above is adapted. Even if there is a nonuniformity or change in equipment exhaust pressure, the wafer 12 has a unique structure for making the film thickness of the wafer 12 uniform.

As shown in FIG. 20, the semiconductor processing apparatus 1 is a pressure sensor which detects the pressure in piping to the piping which connects between the cooling gas exhaust apparatus 356 of the piping of the exhaust part 355, and the radiator 357. FIG. 31 is provided. As a position where the pressure sensor 31 is provided, it is preferable to install in the position as close as possible to the radiator 357 also in the piping which connects the cooling gas exhaust apparatus 356 and the radiator 357. As shown in FIG. By installing the pressure sensor 31 near the radiator 357, the pressure sensor 31 is cooled by being influenced by the length of the pipe, the path of the pipe, the shape of the pipe, and the like while the pressure sensor 31 is reached from the radiator 357. This is because the pressure loss in the gas can be prevented.

The control program 40 has a process control unit 400 (process control unit), temperature control unit 410 (temperature control unit), processing gas flow rate control unit ( 412 (process gas flow control unit), drive control unit 414 (drive control unit), pressure control unit 416 (pressure control unit), process gas exhaust unit control unit 418 (process gas exhaust control unit), temperature measurement A unit 420 (temperature control device), a cooling gas flow rate control unit 422 (cooling gas control device), and a temperature set value storage unit 424 (temperature control device).

The process control part 400 and the cooling gas flow volume control part 422 are shown in FIG. 20, The temperature control part 410, the processing gas flow volume control part 412, the drive control part 414, the pressure control part 416, the processing gas exhaust apparatus The control part 418, the temperature measuring part 420, and the temperature setting value memory | storage part 424 abbreviate | omit illustration.

The control program is supplied to the control unit 2 via the recording medium 240 (FIG. 20), for example, and loaded in the memory 204, similarly to the semiconductor processing apparatus 1 as the premise of the present invention described above. Is executed.

The cooling gas flow rate control unit 422 includes a subtractor 4220, a PID operator 4422, a frequency converter 4224, and a frequency indicator 4226.

The pressure target value S is input to the subtractor 4220 from the process control unit 400.

Here, the pressure target value S is calculated in advance so that the center of the wafer 12 becomes a predetermined set temperature (process temperature), and the end of the wafer 12 becomes lower than the process temperature. For example, the temperature set value storage unit ( The temperature correction value of the internal temperature sensor 324 stored in 424 and the pressure value corresponding to this temperature correction value can be used.

In addition to the pressure target value S, the pressure value A measured by the pressure sensor 31 is input to the subtractor 4220, and the deviation D which subtracted the pressure value A from the pressure target value S is output by the subtractor 4220.

The deviation D is input to the PID operator 4202. In the PID operator 4202, a PID operation is performed based on the input deviation D, and the manipulated variable X is calculated. The calculated manipulated variable X is input to the frequency converter 4224, converted into frequency W by the frequency converter 4224, and output.

The output frequency W is input to the inverter 384 and the frequency of the cooling gas exhaust device 356 is changed.

The pressure value A from the pressure sensor 31 is input to the subtractor 4220 at regular time or at predetermined time intervals, and the deviation D between the pressure target value S and the pressure value A becomes 0 based on this pressure value A. The frequency control of the cooling gas exhaust device 356 is continued.

As described above, it is controlled via the frequency inverter 384 of the cooling gas exhaust device 356 so that the deviation D between the pressure value A measured by the pressure sensor 31 and the predetermined pressure target value S is eliminated. That is, the frequency controlled so that the deviation D disappears is feedback-controlled at the frequency when the deviation is 0, and the cooling gas flow rate control unit 422 controls the flow rate of the cooling gas based on the value after the feedback.

Instead of calculating the frequency W by the PID operator 4422, the frequency control unit 442 inputs the frequency set value T from the process control unit 400, and inputs the frequency W from the frequency indicator 4262 into the inverter 384. The frequency of the cooling gas exhaust device 356 may be changed.

By the above control, even if there is a nonuniformity or change in the equipment exhaust pressure connected to the exhaust port 358, the film formed on the wafer 12 causes the flow rate of the cooling medium flowing through the cooling gas flow path 352 to change. Uneven thickness can be prevented.

FIG. 21: is a figure which shows the structure of the semiconductor manufacturing apparatus 1 which concerns on the 4th form to which this invention is applied.

In the semiconductor processing apparatus 1 according to the third aspect to which the present invention described above is applied, the controller 2 controls the cooling gas exhaust device 356 based on the pressure value detected by the pressure sensor 31 used as the pressure detector. I was in control. On the other hand, in the semiconductor manufacturing apparatus 1 which concerns on the 4th aspect to which this invention is applied, the control part 2 has a cooling gas exhaust apparatus 356, and a heating apparatus based on the pressure value which the pressure sensor 31 detected. The heater 32 used as a control is controlled.

The control program 40 (control apparatus) used for the 4th aspect to which this invention is applied is the process control part 400 (process control apparatus), the temperature control part 410 (temperature control apparatus), and the process gas flow volume control part 412 (Process gas flow rate control device), drive control unit 414 (drive control unit), pressure control unit 416 (pressure control unit), process gas exhaust unit control unit 418 (process gas exhaust unit control unit), temperature measurement A unit 420 (temperature measuring device), a cooling gas flow rate control unit 422 (cooling gas flow rate control device), and a temperature setting value storage unit 424 (temperature setting storage device).

21 shows a process control unit 400, a temperature control unit 410, a cooling gas flow rate control unit 422, and a temperature set value storage unit 424, which include a processing gas flow rate control unit 412, a drive control unit 414, and a pressure control unit ( 416, the process gas exhaust device control unit 418 and the temperature measuring unit 420 are not shown. The control program is supplied to the control unit 2 via the recording medium 240 (see FIG. 18), for example, similarly to the semiconductor processing apparatus 1 according to the third aspect to which the present invention described above is applied. 204 is loaded and executed.

The temperature control unit 410 has a pressure set value adjusting unit 4102 (pressure setting adjusting device). The pressure set value adjusting unit 4102 calculates and sets the desired temperature distribution of the wafer 12 using a correlation table between the film thickness and the temperature distribution registered in the temperature set value storing unit 424 in advance.

The pressure set value adjusting unit 4102 compares the temperature measured by the temperature measuring device 372 with the temperature distribution registered in the temperature set value storing unit 424 to cool the temperature distribution of the wafer 12 to the set distribution. The pressure set value of the gas exhaust device 356 upstream position is calculated. And the pressure setting value is instruct | indicated to the cooling gas flow volume control part 422 through the process control part 400. FIG. Here, instead of directing the pressure value to the cooling gas flow rate control section 422 from the pressure set point adjustment section 4102 via the process control section 400, the pressure is directly applied to the cooling gas flow rate control section 422 from the pressure set point adjustment section 4102. The setting value may be indicated.

The control of the cooling gas exhaust device 356 by the instruction from the pressure set value adjusting unit 4102 is performed until the temperature distribution reaches the set value, and for example, PID operation is used as in the first embodiment described above. By setting the constant, rapid and stable temperature control is realized while suppressing excessive temperature fluctuations.

In addition, the temperature control unit 410 including the pressure set value adjusting unit 4102 controls the pressure at the upstream position of the cooling gas exhaust device 356 by instructing the cooling gas exhaust device 356 in the pressure setting value, and measures the temperature. The heater 32 is controlled via the temperature control device 370 based on the temperature measured by the device 372 and the temperature distribution set by the pressure setpoint adjustment unit 4102.

22, an example of calculation of the pressure set value by the pressure set value adjustment part 4102 is demonstrated.

Prior to the calculation, a pressure setpoint corresponding to each temperature distribution of the wafer 12 is registered in the temperature setpoint storage unit 424 in advance, and the correlation table data between the pressure setpoint and the temperature distribution is acquired and input. Do it. The input may be simultaneously obtained when acquiring correlation table data between the film thickness and the temperature distribution.

In the calculation, if a predetermined pressure set value is instructed to the cooling gas exhaust device 356, and there is a deviation between the temperature distribution registered value previously registered in the temperature distribution value of the wafer 12, the pressure set value and the temperature distribution registration Based on the correlation table data with the teeth, a correction amount is calculated for the pressure set value, and the result is instructed to the cooling gas flow rate control unit 422.

Specifically, as shown in FIG. 22, the pressure registration value P1 when the temperature distribution registration value is T1 and the pressure registration value when the temperature distribution registration value is T2 with respect to the temperature distribution registration value having a relationship of T1 <T2 <T3. Assuming that the pressure setpoint P3 when the value P2 and the temperature distribution registered value is T3 is registered, and the pressure setpoint currently indicated is Ps and the temperature distribution of the wafer 12 at that time is t0, the correction amount Pc with respect to the pressure correction value When t0 exists in the range shown by the following formula (3), it can be calculated | required by the following formula (4).

T1 <t0 <T2

Pc = {(P2-P1) / (T2-T1)} * (t0-T1)

The correction amount Pc is expressed by Equation 6 shown below when t0 is in the range shown by Equation 5 below, and by Equation 8 shown below when t0 is in the range shown by Equation 7 shown below. When t0 exists in the range shown by the following formula (9), it can be calculated | required by the following formula (10).

t0 <T1

Pc = {(P2-P1) / (T2-T1)} * (T1-t0)

T3 <t0

Pc = {(P3-P2) / (T3-T2)} * (t0-T3)

T2 <t0 <T3

Pc = {(P3-P2) / (T3-T2)} * (t0-T2)

As described above, in the semiconductor processing apparatus 1 according to the fourth aspect to which the present invention is applied, control of not only the cooling gas exhaust device 356 but also the heater 32 is based on the pressure value detected by the pressure sensor 31. Is done. In addition, about the same part as the semiconductor processing apparatus 1 which concerns on 3rd aspect to which this invention is applied, the same code | symbol is attached | subjected to FIG. 20, and description is abbreviate | omitted.

In the second, third and fourth aspects to which the present invention described above is applied, similarly to the first aspect to which the present invention described above is applied, the second thermocouple 1064 is disposed in the circumferential direction of the wafer 1400. As in the case where only one is provided, only one internal temperature sensor 324 is provided in the circumferential direction of the wafer 12. For this reason, similarly to the first aspect to which the present invention described above is applied, the internal temperature sensor 324 detects only a part of the circumferential direction of the wafer 12, causing the circumferential direction of the wafer 12 to be circulated. There was a problem that can not improve the temperature difference. Therefore, in 3rd-5th embodiment of this invention, this invention is applied about 2nd form, 3rd form, and 4th form.

That is, in the third embodiment of the present invention, in the second embodiment to which the present invention described above is applied, the internal temperature sensor 324 is similar to the second thermocouple 1064 of the first embodiment of the present invention described above. In the circumferential direction of the wafer 12, for example, a plurality of four or more are provided, and the average value of the outputs of the temperature detection points of the same height in the plurality of internal temperature sensors 324 is calculated, and this average value is controlled. Used for

In addition, in the fourth embodiment of the present invention, in the third embodiment to which the present invention described above is applied, the internal temperature sensor 324 is similar to the second thermocouple 1064 of the first embodiment of the present invention described above. In the circumferential direction of the wafer 12, a plurality of, for example, four or more are provided, and the average value of the temperature detection point outputs of the same height in the plurality of internal temperature sensors 324 is calculated, and this average value is controlled. Used.

In addition, in the fifth embodiment of the present invention, in the fourth embodiment to which the present invention described above is applied, the internal temperature sensor 324 is similar to the second thermocouple 1064 of the first embodiment of the present invention described above. In the circumferential direction of the wafer 12, a plurality of, for example, four or more are provided, and the average value of the temperature detection point outputs of the same height in the plurality of internal temperature sensors 324 is calculated, and this average value is controlled. Used.

In addition, in the third to fifth embodiments of the present invention, if a failure occurs in one of the plurality of internal temperature sensors 324, the average value of the plurality of internal temperature sensors 324 is the other normal internal temperature sensor 324. The control is performed by using the average value of the output of), and in some cases, good control may not be possible. Therefore, in the third to fifth embodiments of the present invention, similarly to the second embodiment described above, the average value of the outputs of the plurality of internal temperature sensors 324, the average value, and the outputs of the respective internal temperature sensors 324. Obtain the deviation (correction value) from. Then, in the internal temperature sensor 324 in which the defect acquired in advance occurs, the internal temperature sensor 324 in which the defect is detected from the correction value with the set temperature predicts the temperature which will be detected if the failure does not occur, and the predicted Control is achieved by using a value.

In addition, in 6th Embodiment of this invention, similarly to 2nd Embodiment mentioned above, the average value of the output of several internal temperature sensors 324-1-4 and each internal temperature sensor 324-1-4 output. Obtain the deviation (correction value) from. When a failure occurs in one of the plurality of internal temperature sensors 324-1 to 4, the internal temperature sensor 324 in which the failure occurs from the current set value and a previously obtained correction value indicates a temperature that should be detected if the failure does not occur. By using the predicted temperature and calculating the average value with the internal temperature sensor 324 where no defect has occurred, control is performed to ensure reproducibility in the case where the defect does not occur in the internal temperature sensor 324. It is expected. Here, the present setting value is a case of a setting value which changes every time according to the set ramp rate as shown in FIG. Since the current set value changes with the ramp rate, this method is expected to be effective in the temperature transient.

The sixth embodiment will be described using specific examples. For example, it is assumed that the plurality of internal temperature sensors 324 have four internal temperature sensors of 324-1, 324-2, 324-3, and 324-4, and each interior when the furnace set temperature is 600 ° C. The output value of the temperature sensor is as follows. Set temperature: 600 degreeC, the output value of the internal temperature sensor 324-1 is 601 degreeC, the output value of the internal temperature sensor 324-2 is 598 degreeC, and the output value of the internal temperature sensor 324-3 is 599 degreeC, internal The output value of the temperature sensor 324-4 was 602 degreeC. At this time, the correction values of the respective internal temperature sensors 324-1 to 4 are as follows. The correction value of the internal temperature sensor 324-1 = the output value-average value of the internal temperature sensor 324-1 = 601 ° C-600 ° C = + 1.0 ° C. Here, the average value is an average value of the internal temperature sensors 324-1 to 324-4, and since the temperature is controlled so that the average value is a set value, the average value is 600 ° C. which is the same as the set value. Similarly, the correction value of the internal temperature sensor 324-2 = output value-average value of the internal temperature sensor 324-2 = 598 占 폚-600 占 폚 = -2.0 占 폚. The correction value of the internal temperature sensor 324-3 = the output value-average value of the internal temperature sensor 324-3 = 599 ° C-600 ° C = -1.0 ° C. The correction value of the internal temperature sensor 324-4 is calculated as the output value-average value of the internal temperature sensor 324-4 = 602-600 = + 2.0 ° C.

Here, if an abnormality has occurred in the internal temperature sensor 324-1, the temperature is in the transition period (before temperature stabilization), where the set value is 400 ° C to 600 ° C, and then the internal temperature after Xmin after the temperature rise rate starts at 10 ° C / min. The estimated value of the temperature sensor 324-1 is as follows. Since it is heating up at 400 degreeC to 600 degreeC, and the temperature rising rate is 10 degreeC / min, the current set value after Xmin becomes a current set value = 400 degreeC + Xminx10 degreeC / min, and (0 <= X <= 20).

The estimated value of the internal temperature sensor 324-1 is obtained by the following equation. The estimated value of the internal temperature sensor 324-1 = the current set value + correction value of the internal temperature sensor 324-1 = 400 ° C. + Xmin × 10 ° C./min+1.0° C. (0 <= X <= 20). As shown in FIG. 25, the estimated value of the said internal temperature sensor 324-1 changes every time similarly to a current set value according to a temperature rising rate. For example, the average value of the internal temperature sensor of 5 min after the start of temperature rise is the output value of the internal temperature sensor 324-2 = 448.5 ° C, the output value of the internal temperature sensor 324-3 = 449.5 ° C, and the internal temperature sensor ( When the output value of 324-4 is 452.0 ° C, the expected value of the internal temperature sensor 324-1 = the current set value + the correction value of the internal temperature sensor 324-1 = 400 ° C + 5min x 10 ° C / min + 1.0 ° C. = 451.0 degreeC, and the internal temperature sensor average value (after 5min of temperature rising) = {(expected value + internal temperature sensor 324-2 of internal temperature sensor 324-1 + internal temperature sensor 324-3) Output value + output value of the internal temperature sensor 324-4} / 4 = (451.0 degreeC + 448.5 degreeC + 449.5 degreeC + 452.0 degreeC) /4=450.25 degreeC.

Here, when the internal temperature sensor 324-1 is normal, it is assumed that a value close to the internal temperature sensor 324-4 is output from the relationship of each internal sensor correction value, so that the internal temperature sensor 324-1 = 324-4 If it is assumed, the average value of the internal temperature sensor 324 becomes internal temperature sensor average value = (452.0 degreeC + 448.5 degreeC + 449.5 degreeC + 452.0 degreeC) /4=450.5 degreeC.

On the other hand, according to 3rd-5th embodiment of this invention, the estimated value of the internal temperature sensor 324-1 becomes following Formula. Expected value of the internal temperature sensor 324-1 = set value + correction value of the internal temperature sensor 324-1 = 600 ° C + 1.0 ° C = 601.0 ° C, and in this case, the average value of the internal temperature sensor 324 is the internal temperature. Average value of the sensor 324 = {expected value of the internal temperature sensor 324-1 + internal temperature sensor 324-2 + internal temperature sensor 324-3 + internal temperature sensor 324-4} / 4 = ( 601.0 degreeC + 448.5 degreeC + 449.5 degreeC + 452.0 degreeC) /4=487.75 degreeC.

Since the average value of the internal temperature sensors 324 according to the third to fifth embodiments of the present invention is the same as the temperature stabilizer even though the expected value of the internal temperature sensor 324-1 is a temperature transient period, In the temperature transient period, as shown in FIG. 26, it computes high compared with the normal time of the internal temperature sensor 324-1.

Even if the internal temperature sensor 324 average value which used the estimated value of the internal temperature sensor 324-1 which concerns on 6th Embodiment of this invention is compared with the normal time of the internal temperature sensor 324-1, reproducibility is not large. It can be secured. From this, a problem can be solved by the sixth embodiment of the present invention in the temperature transient period.

In the seventh embodiment of the present invention, in the output of the plurality of internal temperature sensors 324 as shown in FIG. 27, the difference between the average values of any one of the temperature sensor 324 and the other temperature sensor 324 ( The correction value) is obtained. When a failure occurs in one of the plurality of internal temperature sensors 324, a temperature that has been detected if a failure does not occur in the internal temperature sensor in which the failure occurs from the average value of the temperature sensor 324 in which the failure does not occur and the previously obtained correction value. In addition to the temperature transient, since the temperature is predicted and the internal temperature sensor 324 is predicted by performing the control by calculating the average value with the internal temperature sensor 324 where no defect has occurred using the predicted temperature. The effect is also expected to change due to temperature changes caused by changes in conditions such as gas flow rate and gas flow rate.

For example, it is assumed that the internal temperature sensor 324 has a plurality of internal temperature sensors at 324-1, 324-2, 324-3, and 324-4, and each internal temperature sensor when the furnace set temperature is 600 ° C. The output value of is as follows.

Set temperature: 600 degreeC, the output value of the internal temperature sensor 324-1: 601 degreeC, the output value of the internal temperature sensor 324-2: 598 degreeC, the output value of the internal temperature sensor 324-3: 599 degreeC , Output value of internal temperature sensor 324-4: 602 degreeC. At this time, the correction value of each internal temperature sensor is as follows.

Correction value of the internal temperature sensor 324-1 = Output value of the internal temperature sensor 324-1-{Output value of the internal temperature sensor 324-2 + Output value + internal temperature of the internal temperature sensor 324-3 Output value of the sensor 324-4} / 3 = 601 degree-599.7 degreeC = + 1.3 degreeC.

Similarly, the correction value of the internal temperature sensor 324-2 = output value of the internal temperature sensor 324-2-{output value of the internal temperature sensor 324-1 + output value of the internal temperature sensor 324-3 + The output value of the internal temperature sensor 324-4} / 3 = 598 degreeC-600.7 degreeC = -2.7 degreeC.

Similarly, the correction value of the internal temperature sensor 324-3 = the output value of the internal temperature sensor 324-3-the output value of the internal temperature sensor 324-1 + the output value of the internal temperature sensor 324-2 + The output value of the internal temperature sensor 324-4} / 3 = 599 degreeC-600.3 degreeC = -1.3 degreeC.

Similarly, the correction value of the internal temperature sensor 324-4 = the output value of the internal temperature sensor 324-4-the output value of the internal temperature sensor 324-1 + the output value of the internal temperature sensor 324-2 + The output value of the internal temperature sensor 324-3} / 3 = 602 degreeC-599.3 degreeC = +2.7 degreeC.

If an abnormality has occurred in the internal temperature sensor 324-1, an expected value of the internal temperature sensor 324-1 can be obtained by the following equation. Expected value of the internal temperature sensor 324-1 = {output value of the internal temperature sensor 324-2 + output value of the internal temperature sensor 324-3 + output value of the internal temperature sensor 324-4} / 3 + Correction value of internal temperature sensor 324-1

Here, for example, the internal temperature sensor output value may generate an internal temperature sensor 324-1: abnormality at 5 min after the start of temperature rise, and the internal temperature sensor 324-2 output value = 448.5 ° C, internal temperature. When the sensor 324-3 output value = 449.5 ° C and the internal temperature sensor 324-4 output value = 452.0 ° C, the internal temperature sensor 324-1 expected value is the internal temperature sensor 324-1 expected value = ( The internal temperature sensor average value using 448.5 degreeC + 449.5 degreeC + 452.0 degreeC) /3+1.3 degreeC = 451.3 degreeC, and the internal temperature sensor 324-1 estimated value is the internal temperature sensor 324 average value = {internal temperature sensor (324-1) Expected value + internal temperature sensor 324-2 + internal temperature sensor 324-3 + internal temperature sensor 324-4} / 4 = (451.3 degreeC + 448.5 degreeC + 449.5 degreeC + 452. 0 degreeC) /4=450.32 degreeC can be computed.

On the other hand, according to 3rd-5th embodiment of this invention, the estimated value of the internal temperature sensor 324-1 becomes following Formula. The estimated value of the internal temperature sensor 324-1 = set value + internal temperature sensor 324-1 correction value = 600 占 폚 + 1.0 占 폚 = 601.0 占 폚. In this case, the average value of the internal temperature sensor 324 is the internal temperature sensor 324 average value = {the internal temperature sensor 324-1 expected value + the internal temperature sensor 324-2 + the internal temperature sensor 324-3 + Internal temperature sensor 324-4} / 4 = (601.0 degreeC + 448.5 degreeC + 449.5 degreeC + 452.0 degreeC) /4=487.75 degreeC is calculated.

Here, the average value of the internal temperature sensors 324 according to the third to fifth embodiments of the present invention is the same as the temperature stabilizer even though the internal temperature sensor 324-1 expected value is a temperature transient period. In a transition period, as shown in FIG. 26, it computes high compared with the normal time of the internal temperature sensor 324-1. The internal temperature sensor 324 average value using the internal temperature sensor 324-1 estimated value according to the seventh embodiment of the present invention is secured without reproducibility even when compared with the normal time of the internal temperature sensor 324-1. Can be. From this, the problem in the temperature transient period can be solved according to this embodiment.

For example, each internal temperature sensor output value of 5 min after the start of temperature increase when the temperature distribution changes significantly compared with the time of obtaining the correction value of each internal temperature sensor due to a change in gas flow rate, pressure value, or the like is as follows. do. Internal temperature sensor 324-1: Abnormal occurrence, internal temperature sensor 324-2 output value = 420.5 ° C, internal temperature sensor 324-3 output value = 439.5 ° C, internal temperature sensor 324-4 ) When the output value is 410.0 ° C, the internal temperature sensor 324-1 expected value according to the present embodiment is the internal temperature sensor 324-1 expected value = (internal temperature sensor 324-2 + internal temperature sensor 324 -3) + internal temperature sensor 324-4} / 3 + internal temperature sensor 324-1 correction value = (420.5 degreeC + 439.5 degreeC + 410.0 degreeC) /3+1.3 degreeC = 424.6 degreeC

In this case, the internal temperature sensor 324 average value is the internal temperature sensor 324 average value = {internal temperature sensor 324-1 expected value + internal temperature sensor 324-2 output value + internal temperature sensor 324-3. Output value + internal temperature sensor 324-4 output value} / 4 = (424.6 degreeC + 420.5 degreeC + 439.5 degreeC + 410.0 degreeC) /4=423.65 degreeC can be computed.

On the other hand, according to 3rd-5th embodiment of this invention, the estimated value of the internal temperature sensor 324-1 becomes following Formula. Expected value of internal temperature sensor 324-1 = current set value + internal temperature sensor 324-1 correction value = 400 ° C. + 5 min × 10 ° C./min+1.0° C. = 451.0 ° C.

In this case, the internal temperature sensor 324 average value is the internal temperature sensor 324 average value = {internal temperature sensor 324-1 expected value + internal temperature sensor 324-2 output value + internal temperature sensor 324-3. Output value + internal temperature sensor 324-4 output value} / 4 = (451.0 degreeC + 420.5 degreeC + 439.5 degreeC + 410.0 degreeC) /4=430.25 degreeC can be computed.

In the case where the internal temperature sensor 324-1 is normal, a value close to the internal temperature sensor 324-4 is output from the relationship between the respective internal sensor correction values, so that the internal temperature sensor 324-1 = (324-4). Assuming that the average value of the internal temperature sensor 324 is an average value of the internal temperature sensor (for example, normal) = (410.0 ° C + 420.5 ° C + 439.5 ° C + 410.0 ° C) / 4 = 420.0 ° C.

Here, the average value of the internal temperature sensor 324 according to the sixth embodiment of the present invention is calculated from the situation in which the internal temperature sensor 324-1 expected value acquires the internal temperature sensor correction value, and the internal value is caused by disturbance. If the temperature situation changes, a difference occurs between normal times.

According to the seventh embodiment of the present invention, the correction value is calculated at the time at the time of acquiring, but the average value of the current abnormality-free internal temperature sensor is used at the time of calculating the expected value, The problem can be solved.

In the above, it is preferable that the internal temperature sensor 324 is not provided at the dummy wafer region but is installed at the height of the product wafer region to detect the temperature near the edge portion of the product wafer. Here, the product wafer is actually a wafer on which semiconductor elements such as an IC are fabricated, and the dummy wafer is arranged at both ends of the boat so as to insert the product wafer in the center so that the heat in the product wafer region does not escape, and from above and below the reaction furnace. Do not allow flying particulates or contaminants to adhere to the product wafer.

For example, it is preferable to control using 7th Embodiment for a temperature transient period, and using 3rd-5th Embodiment for a temperature stabilizer. The switching timing of the seventh embodiment and the third to fifth embodiments may be 20 min at the time of completion of the temperature increase (in the case of the temperature increase rate of 10 ° C / min at 400 to 600 ° C), but after completion of the temperature increase, the internal temperature sensor The average value of and is performed after the temperature deviation between the set value and the average value of the internal temperature sensor falls within a predetermined temperature range.

In this way, in the temperature transient period, the reproducibility of the temperature transient period and the response to disturbance can be made by performing the correction method of the seventh embodiment. Further, by performing the correction methods of the third to fifth embodiments at the time of temperature stability, it is possible to ensure the reproducibility at the time of normal temperature without being affected by disturbance.

In the seventh embodiment, for example, a sensor 324-1, which is a reference to the internal temperature sensor, is set, and the average deviation between the other sensors 324-2, 324-3, 324-4 is a predetermined value. As a result, the temperature variation in the circumferential direction of the wafer can be controlled in a constant range.

Conventionally, although the circumferential temperature difference of the wafer was improved by controlling the average value of the temperature sensors 324-1 to 4 at the set value, the reference temperature sensor 324-1 is controlled at the set value by applying the seventh embodiment. . If it does not enter a predetermined range while monitoring the temperature deviation with the average value of the other temperature sensors 324-2 to 4, the exhaust pressure can be adjusted, and the temperature difference in the circumferential direction of the wafer can be controlled to a certain range.

According to the present invention, it is possible to provide a semiconductor manufacturing apparatus and a substrate processing method which can reduce the circumferential temperature difference of the substrate and continue to perform the substrate treatment even if a defect occurs in the temperature sensor.

BRIEF DESCRIPTION OF THE DRAWINGS The figure which shows typically the structure of the substrate processing apparatus which concerns on the 1st aspect to which this invention is applied.

It is a figure which shows typically the structure of the reaction tube which the substrate processing apparatus which concerns on the 1st aspect to which this invention is applied has.

It is a figure which shows an example of the detailed structure of the central part thermocouple which the substrate processing apparatus which concerns on the 1st form to which this invention is applied has.

4 shows an example of a detailed configuration of a ceiling thermocouple of the substrate processing apparatus according to the first aspect to which the present invention is applied.

The figure which shows an example of the detailed structure of the lower thermocouple which the substrate processing apparatus which concerns on the 1st aspect to which this invention is applied has.

6 is a diagram schematically showing a configuration of a semiconductor manufacturing apparatus according to a first aspect to which the present invention is applied.

FIG. 7 is an explanatory diagram for explaining a configuration and method for correcting a set temperature using a temperature correction value at the center of a wafer, as a semiconductor manufacturing apparatus according to a first aspect to which the present invention is applied. FIG.

8 is a chart showing data of a central temperature deviation and a ceiling temperature deviation acquired with a semiconductor manufacturing apparatus according to a first aspect to which the present invention is applied.

9 is a first diagram for explaining calculation of the pressure correction amount of the semiconductor manufacturing apparatus according to the first aspect to which the present invention is applied.

10 is a second diagram for explaining calculation of the pressure correction amount of the semiconductor manufacturing apparatus according to the first aspect to which the present invention is applied.

The perspective view which shows the principal part of the semiconductor manufacturing apparatus which concerns on 1st Embodiment of this invention.

It is a schematic diagram which shows typically arrangement | positioning in the plane of the thermocouple which the semiconductor manufacturing apparatus which concerns on 1st Embodiment of this invention has.

FIG. 13 is an explanatory diagram for explaining a control method and a configuration for controlling the semiconductor manufacturing apparatus according to the first embodiment of the present invention. FIG.

14 is an explanatory diagram illustrating a control method and a configuration for controlling a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

Fig. 15 is a diagram showing an overall configuration of a semiconductor processing apparatus according to a second aspect to which the present invention is applied.

FIG. 16 is a diagram illustrating a processing chamber in a state where the boat and the wafer shown in FIG. 15 are accommodated. FIG.

FIG. 17 is a diagram illustrating a configuration of a first control program that performs control of components around the processing chamber and the processing chamber shown in FIGS. 15 and 16.

18 is a diagram illustrating a configuration of a control unit shown in FIG. 15.

19 is a diagram illustrating a shape of a wafer to be processed in the semiconductor processing apparatus according to the second aspect to which the present invention is applied.

20 is a diagram illustrating a configuration of a semiconductor processing apparatus according to a third aspect to which the present invention is applied.

21 is a diagram illustrating a configuration of a semiconductor processing apparatus according to a fourth aspect to which the present invention is applied.

It is a figure explaining an example of calculation of the pressure setting value of the semiconductor processing apparatus which concerns on 4th Embodiment of this invention.

23 is a diagram showing a relationship between a current set temperature and a predicted temperature.

24 is a diagram illustrating a relationship between a current set temperature and a predicted temperature.

The figure which shows the relationship between the present set temperature and the internal temperature sensor prediction temperature by each embodiment.

The figure which shows the relationship between the present set temperature, and the average value of the internal temperature sensor by each embodiment.

Fig. 27 is a diagram showing a relationship between time, a set temperature, and a correction value.

<Description of Major Codes in Drawings>

1: Semiconductor processing device # 12: Wafer

14: Boat 100: cassette delivery unit

102: cassette stocker 104: buffer cassette stocker

106: wafer mover 108: boat elevator

490: wafer cassette 2: control unit (control unit)

22: display, input unit (display, input device) 200: CPU wafer

24: recording unit (recording device) 240: recording medium

40: control program

400: process control unit (process control unit)

410: temperature control unit (temperature control unit)

4102: pressure set point adjustment unit (pressure set point adjuster)

412: process gas flow control unit (process gas flow control unit)

414: drive control unit (drive control unit)

416: pressure control unit (pressure control unit)

418: Process gas exhaust device control unit (Process gas exhaust device control device)

420: temperature measuring unit (temperature measuring device)

422: cooling gas flow rate control unit (cooling gas flow rate control device)

4220: Subtractor # 4222: PID calculator

4224: frequency converter 4226: frequency indicator

424: Temperature setpoint storage unit (temperature setpoint storage device)

3: Treatment chamber 300: Insulation material (140: insulation board)

31: pressure sensor 32: heater

320: temperature adjustment part 322, 324: temperature sensor

340: Gas introduction nozzle 344: Nozzle cover

346: exhaust pipe 348: rotary shaft

350: Manifold 351: O-ring

352: cooling gas flow path 353: intake

354: to exhaust 355: exhaust

356: cooling gas exhaust device 357: radiator

358: Exhaust ball 359: Shutter

360: outer tube 362: inner tube

370: temperature control device 372: temperature measuring device

374: MFC 376: EC

378: PS 380: APC

382: EP 384: Inverter

1010: semiconductor manufacturing apparatus 1012: crack tube

1014: reaction tube 1016: supply tube

1018: exhaust pipe 1020: introduction member

1022: Exhaust 1024: MFC

1030: APC 1032: Pressure sensor

1034: Base 1036: Ring

1038: seal cap 1040: rotary shaft

1042: quartz cap 1044: boat

1050: boat elevator 1052: heater

1060: temperature detector (temperature detector) 1062: first thermocouple

1064: second thermocouple 1064a: internal main thermocouple

1064b: Inner sub thermocouple 1064c: Inner side thermocouple

1064d: inner side thermocouple 1066: third thermocouple

1068: center thermocouple 1070: heaven thermocouple

1072: lower thermocouple 1078: inverter

1080: exhaust 1082: exhaust pipe

1084: cooling gas exhaust device 1086: radiator

1090: shutter 1092: pressure sensor

1200: control unit (control unit)

1202: gas flow control unit (gas flow control unit)

1204: temperature control unit (temperature control unit)

1206: pressure control unit (pressure control unit)

1208: drive control unit (drive control unit)

1220: cooling gas flow control unit (cooling gas flow control unit)

1222: Subtractor 1224: PID Operator

1226: frequency converter 1228: frequency indicator

1230: average temperature calculator 1242: PID calculator

1240: Wafer center temperature correction calculation unit (wafer center temperature correction calculation device)

1250: operation memory 1300: upper controller

1400: Wafer

Claims (6)

A processing chamber for processing a substrate, A heating device for heating the processing chamber, A cooling gas flow path provided between the processing chamber and the heating apparatus; A pressure detector for measuring a pressure value in the cooling gas flow path; A temperature detector for detecting a temperature of the substrate; Control unit for processing the substrate by controlling the heating device and the cooling device Including, The said control part is an average value of the measured value of the 1st temperature detection point which detects the temperature of a center part of a board | substrate, and the several detection point measurement value of the board | substrate circumferential direction of the 2nd temperature detection part which detects the temperature of a board | substrate peripheral part. Is obtained in advance and controls the heating device and the cooling device based on the obtained measured value. On the basis of the obtained measurement value, the average value of the measured value of the first temperature detection point for detecting the temperature of the center of the substrate and the plurality of detection point measurement values in the circumferential direction of the substrate of the second temperature detection part for detecting the temperature of the substrate peripheral portion are acquired in advance. Calculating a pressure correction value of the pressure value in the cooling gas flow path provided between the processing chamber for processing the gas and the heating device, and correcting the pressure value by the pressure correction value; A step of flowing a cooling gas into the cooling gas flow path by a cooling device while heating the processing chamber with the heating device, and controlling the heating device and the cooling device by a controller to process a substrate based on the pressure value after the correction. Substrate processing method comprising a. A processing chamber for processing a substrate, A heating device for heating the processing chamber, A cooling gas flow path provided between the processing chamber and the heating device, A pressure detector for measuring a pressure value in the cooling gas flow path; A plurality of temperature detectors for detecting a temperature in the processing chamber; Control unit for processing the substrate by controlling the heating device and the cooling device Including; The control unit includes an average value of a plurality of temperature detection unit measurement values for detecting a temperature in the processing chamber, Calculate a deviation between the average value of the plurality of temperature detection unit measurements and each of the temperature detection unit measurements; The semiconductor manufacturing apparatus which controls at least one of the said heating apparatus or the said cooling apparatus based on this computed deviation. Obtaining the average value of the measured values of the plurality of detection points in the circumferential direction of the substrate of the temperature detection unit for detecting the temperature of the substrate peripheral portion, and the respective detection point measurement values among the plurality of detection points, The pressure correction value of a pressure value is computed in the cooling gas flow path provided between the processing chamber which processes a board | substrate, and a heating apparatus based on the average value of the obtained several detection point measurement value, and the measurement value of each detection point among the said several detection points, and the said pressure correction value Correcting the pressure value by While heating the processing chamber with the heating device, a cooling gas flows into the cooling gas flow path by the cooling device, and based on the pressure value after the correction, at least one of the heating device or the cooling device is controlled by the controller to process the substrate. Process Substrate processing method comprising a. A processing chamber for processing a substrate, A heating device for heating the processing chamber, A cooling gas flow path provided between the processing chamber and the heating device, A pressure detector for measuring a pressure value in the cooling gas flow path; A plurality of temperature detectors for detecting a temperature in the processing chamber; Control unit for processing the substrate by controlling the heating device and the cooling device Including; The said control part calculates the deviation of the measured value of one temperature detection part of the some temperature detection part which detects the temperature in the said process chamber, and the average value of the other some temperature detection part, And at least one of the heating device and the cooling device is controlled based on the calculated deviation. The average value of the measured value of one detection point of the several detection points of the board | substrate circumferential direction of the temperature detection part which detects the temperature of a board | substrate peripheral part, and the measured value of each detection point except the said detected one detection point among a plurality of detection points beforehand Acquire, Calculating a pressure correction value of the pressure value in the cooling gas flow path provided between the processing chamber for processing the substrate and the heating apparatus based on the obtained measured value and the average value, and correcting the pressure value by the pressure correction value; While heating the processing chamber with the heating device, a cooling gas flows into the cooling gas flow path by the cooling device, and based on the pressure value after the correction, at least one of the heating device or the cooling device is controlled by the controller to process the substrate. Process Substrate processing method comprising a.

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