JP2014042042A - Semiconductor manufacturing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which reduces a substrate temperature difference occurring in a circumferential direction and continues to perform substrate processing even when a malfunction occurs in a temperature sensor, and to provide a substrate processing method.SOLUTION: A semiconductor manufacturing apparatus 1010 includes: a reaction tube 1014 which processes a wafer 1400; a heater 1052 which heats the reaction tube; an exhaust pipe 1082; a pressure sensor 1092 which detects a pressure value in the exhaust pipe 1082 when a cooling gas is flowed in the exhaust pipe 1082; and a control part 1200 which controls the heater 1052 and a cooling gas exhaust device 1084 to process the wafer 1400. The control part 1200 preliminarily obtains an average value of multiple second temperature detection parts 1064 for detecting a state of a wafer 1400 peripheral part and a measurement value of a first thermocouple 1062 for detecting a state of a substrate center part and controls the heater 1052 and the cooling gas exhaust device 1084 on the basis of the obtained measurement values.

Description

The present invention relates to a substrate processing method and a semiconductor manufacturing apparatus for processing a substrate such as a semiconductor wafer, and in particular, in a thermocouple for measuring a temperature in the vicinity of a substrate provided in a heat treatment apparatus, a plurality of thermocouples are arranged in the circumferential direction of the substrate. The present invention relates to a substrate processing apparatus and a semiconductor manufacturing apparatus that improve temperature difference in the circumferential direction of the substrate by controlling based on values detected by a plurality of thermocouples.
Furthermore, by applying a correction value to a plurality of thermocouples, even if a defect occurs in one of the plurality of thermocouples, the thermocouple can detect from the correction value of the thermocouple in which the defect has occurred. The present invention relates to a substrate processing apparatus and a semiconductor manufacturing apparatus for predicting a temperature that will be continued and continuing control.

For example, Patent Literature 1 discloses that the deviation between the temperature at the edge of the substrate and the temperature at the center that occurs when the heating temperature of the substrate is changed within a predetermined time, and the temperature at the edge of the substrate and the temperature at the center. Disclosed is a substrate processing apparatus that uses a steady-state deviation to obtain a change temperature amount N for realizing a desired average temperature deviation M, controls a heating temperature for the substrate, and makes the film thickness formed on the substrate uniform. To do.
However, even if the desired average temperature deviation M is realized, there is a limit to the uniformity of the film thickness formed on the substrate.

  Further, in the semiconductor manufacturing apparatus, in order to detect the temperature in the furnace, a plurality of temperature sensors (temperature detection unit, thermocouple) are made of, for example, quartz, and installed in a furnace having a long cylindrical shape, for example. A technique is known in which the temperature in the furnace is detected and, based on the detected temperature, a temperature control device is used to control, for example, the inside of the furnace to a set temperature instructed by a host controller.

Also, in the semiconductor manufacturing apparatus, for example, the distance between the heater element wire and the furnace due to the heater installation error, the mounting error of the so-called inner tube and outer tube of the semiconductor manufacturing apparatus, the so-called boat column temperature A temperature difference may occur in the circumferential direction of the substrate in the furnace due to a change in characteristics or the like, and a technique having a mechanism for rotating the boat to reduce such a temperature difference is known.
However, in such a semiconductor manufacturing apparatus, the temperature difference in the circumferential direction of the substrate may not be improved due to the fact that only a part of the temperature in the circumferential direction of the substrate can be detected.

  Further, in the conventional semiconductor manufacturing apparatus, if a defect occurs in one of the plurality of temperature sensors, it is difficult to control the temperature of the substrate, and the substrate film quality is likely to be poor. Since the apparatus operating rate deteriorates, there is a problem that the substrate processing cannot be performed continuously.

International Publication No. 2005/008755 Pamphlet

  The present invention provides a semiconductor manufacturing apparatus and a substrate processing method that can reduce a temperature difference in the circumferential direction of a substrate and that can continuously process a substrate even if a temperature sensor is defective. It is an object.

  The first feature of the present invention is that a processing chamber for processing a substrate, a heating device for heating the processing chamber, a cooling gas flow path provided between the processing chamber and the heating device, A pressure detector for detecting a pressure value in a cooling gas exhaust passage communicating with the cooling gas passage on the downstream side of the cooling gas passage when flowing a cooling gas in the cooling gas passage by a cooling device; A control unit that processes the substrate by controlling the heating device and the cooling device, and the control unit is configured to measure the measured value of the first temperature detection unit that detects the state of the center of the substrate, and the peripheral edge of the substrate. A semiconductor that acquires in advance an average value of measured values of a plurality of second temperature detection units located at the same height for detecting the state, and controls the heating device and the cooling device based on the acquired measured value In production equipment.

  The second feature of the present invention is that a processing chamber for processing a substrate, a heating device for heating the processing chamber, and a cooling gas flow path provided between the processing chamber and the heating device. A pressure detector that measures a pressure value in the cooling gas flow path, a temperature detector that detects the temperature of the substrate, and a controller that controls the heating device and the cooling device to process the substrate. The control unit has a plurality of detection points in the substrate circumferential direction of the measurement value of the first temperature detection point for detecting the temperature of the substrate center and the second temperature detection unit for detecting the temperature of the substrate periphery. And an average value of the measured values are obtained in advance, and the semiconductor manufacturing apparatus controls the heating device and the cooling device based on the obtained measured values.

  The third feature of the present invention is that a cooling device is provided in a cooling gas flow path provided between the processing chamber and the heating device while the processing chamber for processing the substrate is heated by the heating device. When the cooling gas is caused to flow, the process of processing the substrate by controlling the heating device and the cooling device by the control unit based on the pressure value in the cooling gas flow path, and the state of the substrate peripheral portion measured in advance The average value of the measurement values of the plurality of second detection units located at the same height to be detected and the measurement value of the first detection unit that detects the state of the center of the substrate are acquired in advance, and the second detection The deviation between the average value of the part and the measurement value of the first detection part is obtained, and the deviation stored in advance before the substrate processing step is compared with the deviation obtained when the substrate processing step is performed. If the two deviations are different, based on the obtained deviation Serial calculating a pressure correction value in the cooling gas flow passage, in a substrate processing method and a step of correcting the pressure value by the pressure correction value.

  The fourth feature of the present invention is that the measurement value of the first temperature detection point for detecting the temperature at the center of the substrate and the substrate circle of the second temperature detection unit for detecting the temperature at the peripheral edge of the substrate. In the cooling gas flow path provided between the processing chamber for processing the substrate and the heating device based on the acquired measured values in advance, the average value of the measured values of the plurality of detection points in the circumferential direction is acquired in advance. Calculating a pressure correction value of the pressure value, correcting the pressure value by the pressure correction value, and flowing a cooling gas into the cooling gas flow path by the cooling device while heating the processing chamber by the heating device. And a step of processing the substrate by controlling the heating device and the cooling device by a controller based on the corrected pressure value.

  The fifth feature of the present invention is that a processing chamber for processing a substrate, a heating device for heating the processing chamber, and a cooling gas flow path provided between the processing chamber and the heating device. And a pressure detector for detecting a pressure value in a cooling gas exhaust passage communicating with the cooling gas passage on the downstream side of the cooling gas passage when the cooling gas is caused to flow through the cooling gas passage through the cooling gas passage. A control unit that controls the heating device and the cooling device to process the substrate, and the control unit measures the measured value of the first temperature detection unit that detects the state of the center of the substrate, and the peripheral edge of the substrate The average value of the measurement values of the plurality of second temperature detection units located at the same height for detecting the state of the first is obtained in advance, and the measurement value of the first temperature detection unit and the second temperature detection unit The deviation from the average value of the substrate is obtained, and the deviation stored in advance before the substrate processing step is performed. And when the two deviations are different, a pressure correction value in the cooling gas flow path is calculated based on the obtained deviation, and the pressure correction value The semiconductor manufacturing apparatus corrects the pressure value.

  Preferably, the second temperature detection unit is a plurality of temperature detection units arranged in the vicinity of the peripheral edge of the substrate, and the first detection unit is arranged between the substrate holders that support the substrate, or It is a temperature detection part arrange | positioned above the said substrate holder, or below the said substrate holder.

  Preferably, the deviation between the measured value and the set value of the plurality of second temperature detectors is obtained and stored in advance, and at least one of the second temperature detectors is in an abnormal state. In the case where the error is detected, the average value is calculated based on the deviation obtained in advance by the second temperature detection unit in the abnormal state, and temperature control is performed based on the average value.

  According to a sixth aspect of the present invention, there is provided a control system that controls film uniformity of a substrate, wherein the control system heats the processing chamber for processing the substrate with a heating device, and When the cooling gas flows through the cooling gas channel provided between the heating device and the heating device, the control unit controls the heating device and the cooling device based on the pressure value in the cooling gas channel. The substrate processing step, the measurement value of the first detection unit for detecting the state of the central part of the substrate, and a plurality of second detections positioned at the same height for detecting the state of the peripheral edge of the substrate measured in advance. The average value of the measurement values of the part is obtained in advance, and the deviation between the measurement value of the first detection part and the average value of the second detection part is obtained, and stored in advance before performing the substrate processing step. Deviation and deviation obtained when performing the substrate processing step If the two deviations are different from each other, a pressure correction value in the cooling gas flow path is calculated based on the obtained deviation, and the pressure correction value is corrected by the pressure correction value. In the substrate processing apparatus to be performed.

  Preferably, the control system previously obtains and stores a deviation between the measurement value and the set value of the plurality of second temperature detection units, and at least one of the second temperature detection units is abnormal. When the state is reached, the average value is calculated based on the deviation obtained in advance by the second temperature detection unit in the abnormal state, and temperature control is performed based on the average value.

  According to a seventh aspect of the present invention, there is provided a plurality of thermocouples for detecting a temperature in the vicinity of the wafer, the plurality of thermocouples being installed in a circumferential direction with respect to the wafer, The heat treatment apparatus improves the temperature difference.

  Preferably, the method further includes a mounting unit that is programmed on a computer and that is mounted on a computer.

  An eighth feature of the present invention is that the temperature in the vicinity of the wafer is detected, a plurality of thermocouples installed in the vicinity of the wafer, correction values of the plurality of thermocouples are acquired, and the plurality of thermocouples are acquired. When a failure occurs in any of the thermocouples in the pair, based on the correction value obtained from the plurality of thermocouples, predict the output of the thermocouple in which the failure in the plurality of thermocouples occurs, And a control unit (control device) that performs control based on the prediction.

  Preferably, the control unit (control device) includes a mounting unit that programs a direction for predicting an output of a thermocouple in which a failure occurs in the plurality of thermocouples and is mounted on a computer.

  According to the present invention, there are provided a semiconductor manufacturing apparatus and a substrate processing method capable of reducing the temperature difference in the circumferential direction of the substrate and continuously processing the substrate even if a defect occurs in the temperature sensor. can do.

It is a figure which shows typically the structure of the substrate processing apparatus which concerns on the 1st form to which this invention is applied. It is a figure which shows typically the structure of the reaction tube which the substrate processing apparatus which concerns on the 1st form to which this invention is applied has. It is a figure which shows an example of a detailed structure of the center part thermocouple which the substrate processing apparatus which concerns on the 1st form to which this invention is applied has. It is a figure which shows an example of a detailed structure of the ceiling part thermocouple which the substrate processing apparatus which concerns on the 1st form to which this invention is applied has. It is a figure which shows an example of a detailed structure of the lower thermocouple which the substrate processing apparatus which concerns on the 1st form to which this invention is applied has. It is a figure which shows typically the structure of the semiconductor manufacturing apparatus which concerns on the 1st form to which this invention is applied. It is explanatory drawing explaining the structure and method which correct | amend set temperature using the wafer center part temperature correction value with the semiconductor manufacturing apparatus which concerns on the 1st form to which this invention is applied. It is a graph which shows the data of the center part temperature deviation and ceiling part temperature deviation which were acquired with the semiconductor manufacturing apparatus which concerns on the 1st form to which this invention is applied. It is a 1st figure explaining calculation of the pressure correction amount of the semiconductor manufacturing apparatus which concerns on the 1st form to which this invention is applied. It is a 2nd figure explaining calculation of the pressure correction amount of the semiconductor manufacturing apparatus which concerns on the 1st form to which this invention is applied. It is a perspective view which shows the principal part of the semiconductor manufacturing apparatus which concerns on the 1st Embodiment of this invention. It is a schematic diagram which shows typically arrangement | positioning in the plane of the thermocouple which the semiconductor manufacturing apparatus which concerns on the 1st Embodiment of this invention has. It is explanatory drawing explaining the control method of the semiconductor manufacturing apparatus which concerns on the 1st Embodiment of this invention, and the structure for performing control. It is explanatory drawing explaining the control method of the semiconductor manufacturing apparatus which concerns on the 2nd Embodiment of this invention, and the structure for performing control. It is a figure which shows the whole structure of the semiconductor processing apparatus which concerns on the 2nd form to which this invention is applied. FIG. 16 is a diagram illustrating a processing chamber in a state where the boat and the wafer illustrated in FIG. 15 are accommodated. It is a figure which shows the structure of the 1st control program which performs the control with respect to the periphery of the process chamber shown in FIG. 15, FIG. 16, and a process chamber. It is a figure which shows the structure of the control part shown in FIG. It is a figure which illustrates the shape of the wafer used as the process target in the semiconductor processing apparatus which concerns on the 2nd form to which this invention is applied. It is a figure which shows the structure of the semiconductor processing apparatus which concerns on the 3rd form to which this invention is applied. It is a figure which shows the structure of the semiconductor processing apparatus which concerns on the 4th form to which this invention is applied. It is a figure explaining an example of the calculation of the pressure setting value of the semiconductor processing apparatus which concerns on the 4th Embodiment of this invention. It is a figure which shows the relationship between present preset temperature and estimated temperature. It is a figure which shows the relationship between present preset temperature and estimated temperature. It is a figure which shows the relationship between the present setting temperature and the internal temperature sensor estimated temperature by each embodiment. It is a figure which shows the relationship between the present setting temperature and the average value of the internal temperature sensor by each embodiment. It is a figure which shows the relationship between time, preset temperature, and a correction value.

Next, embodiments of the present invention will be described with reference to the drawings.
1 to 7 show a semiconductor manufacturing apparatus 1010 according to a first embodiment to which the present invention is applied.

  As shown in FIG. 1, the semiconductor manufacturing apparatus 1010 has a soaking tube 1012. The soaking tube 1012 is made of a heat-resistant material such as SiC, for example, and has a cylindrical shape with a closed upper end and an opening at the lower end. I am doing. A reaction tube 1014 used as a reaction vessel is provided inside the soaking tube 1012. The reaction tube 1014 is made of a heat-resistant material such as quartz (SiO 2) and has a cylindrical shape having an opening at the lower end, and is disposed concentrically in the soaking tube 1012.

A gas supply pipe 1016 made of, for example, quartz and an exhaust pipe 1018 are connected to the lower part of the reaction tube 1014. The supply pipe 1016 is provided with an introduction member 1020 in which an introduction port for introducing gas is formed. The supply pipe 1016 and the introduction member 1020 are provided along the side of the reaction tube 1014 from the bottom of the reaction tube 1014. For example, it rises into a thin tube and reaches the inside of the reaction tube 1014 at the ceiling of the reaction tube 1014.
Further, the exhaust pipe 1018 is connected to an exhaust port 1022 formed in the reaction tube 1014.

  The supply pipe 1016 allows gas to flow from the ceiling of the reaction pipe 1014 to the inside of the reaction pipe 1014, and the exhaust pipe 1018 connected to the lower part of the reaction pipe 1014 is used for exhausting from the lower part of the reaction pipe 1014. A processing gas used in the reaction tube 1014 is supplied to the reaction tube 1014 via an introduction member 1020 and a supply tube 1016. The gas supply pipe 1016 is connected to an MFC (mass flow controller) 1024 used as a flow rate control means for controlling the gas flow rate, or a moisture generator (not shown). The MFC 1024 is connected to a gas flow rate control unit 1202 (gas flow rate control device) included in the control unit 1200 (control device), and the flow rate of gas or water vapor (H 2 O) supplied by the gas flow rate control unit 1202 is, for example, The amount is controlled to a predetermined amount.

  The control unit 1200 includes a temperature control unit 1204 (temperature control device), a pressure control unit 1206 (pressure control device), and a drive control unit 1208 (drive control device) in addition to the gas flow rate control unit 1202 described above. Yes. The control unit 1200 is connected to the host controller 1300 and is controlled by the host controller 1300.

  An APC 1030 used as a pressure regulator and a pressure sensor 1032 used as pressure detection means are attached to the exhaust pipe 1018. The APC 1030 controls the amount of gas flowing out from the reaction tube 1014 based on the pressure detected by the pressure sensor 1032, and controls the inside of the reaction tube 1014 to have a constant pressure, for example.

  A base 1034 made of, for example, quartz and having a disk shape and used as a holding body is attached via an O-ring 1036 to the opening formed at the lower end of the reaction tube 1014. The base 1034 can be attached to and detached from the reaction tube 1014, and in a state where the base 1034 is attached to the reaction tube 1014, the reaction tube 1014 is hermetically sealed. The base 1034 is attached to, for example, a surface facing upward in the gravitational direction of a seal cap 1038 having a substantially disk shape.

  A rotation shaft 1040 used as a rotation means is connected to the seal cap 1038. The rotation shaft 1040 rotates in response to drive transmission from a drive source (not shown), and rotates a quartz cap 1042 used as a holding body, a boat 1044 used as a substrate holding member, and a wafer 1400 held by the boat 1044 and corresponding to a substrate. Let The speed at which the rotating shaft 1040 rotates is controlled by the control unit 1200 described above.

  The semiconductor manufacturing apparatus 1010 has a boat elevator 1050 used for moving the boat 1044 in the vertical direction, and is controlled by the control unit 1200 described above.

  On the outer periphery of the reaction tube 1014, heaters 1052 used as heating means are arranged concentrically. The heater 1052 is a temperature detection unit in the first thermocouple 1062, the second thermocouple 1064, and the third thermocouple 1066 so that the temperature in the reaction tube 1014 is set to the processing temperature set by the host controller 1300. Based on the temperature detected by 1060 (temperature detection device), the temperature control unit 1204 controls the temperature.

The first thermocouple 1062 is used to detect the temperature of the heater 1052, and the second thermocouple 1064 is used to detect the temperature between the soaking tube 1012 and the reaction tube 1014.
Here, the second thermocouple 1064 may be installed between the reaction tube 1014 and the boat 1044 so that the temperature in the reaction tube 1014 can be detected.
The third thermocouple 1066 is installed between the reaction tube 1014 and the boat 1044, is installed closer to the boat 1044 than the second thermocouple 1064, and detects the temperature at a position closer to the boat 1044. The third thermocouple 1066 is used for measuring the temperature uniformity in the reaction tube 1014 during the temperature stabilization period.

FIG. 2 schematically shows the configuration around the reaction tube 1014.
As described above, the semiconductor manufacturing apparatus 1010 includes the temperature detection unit 1060, and the temperature detection unit 1060 includes the first thermocouple 1062, the second thermocouple 1064, and the third thermocouple 1066. In addition to these, as shown in FIG. 2, the temperature detection unit 1060 includes a center thermocouple 1068 that detects the temperature at the substantially central position of the wafer 1400 and a ceiling portion that detects the temperature near the ceiling of the boat 1044. And a thermocouple 1070. Further, the semiconductor manufacturing apparatus 1010 may be provided with a lower thermocouple 1072 (see FIG. 5) described later.

FIG. 3 shows an example of a detailed configuration of the center thermocouple 1068.
As shown in FIG. 3, the center thermocouple 1068 is formed in, for example, a plurality of L-shapes in order to measure the temperature near the center of the wafer 1400 having the same height as the third thermocouple 1066. Output a temperature measurement. In addition, the center thermocouple 1068 measures the temperature near the center of the wafer 1400 at a plurality of locations before the semiconductor manufacturing apparatus 1010 starts processing the wafer 1400, and the semiconductor manufacturing apparatus 1010 processes the wafer 1400. In some cases it will be removed.
Since the center thermocouple 1068 is configured to be removable from the reaction tube 1014, the center thermocouple 1068 is removed when the boat 1044 is rotated or when the wafer 1400 is transferred to the boat 1044. Thus, the central thermocouple 1068 can be prevented from coming into contact with other members. The center thermocouple 1068 is hermetically sealed with a seal cap 1038 with a joint interposed therebetween.

FIG. 4 shows an example of a detailed configuration of the ceiling thermocouple 1070.
As shown in FIG. 4, the ceiling thermocouple 1070 has a so-called L-shape, is installed on the top of the boat 1044, and is used to measure the temperature near the ceiling of the boat 1044. Outputs the temperature measurement value. Unlike the center thermocouple 1068, the ceiling thermocouple 1070 is installed above the top plate of the boat 1044. For this reason, the boat 1044 can be loaded or unloaded, and the boat 1044 can be rotated. Therefore, even when the semiconductor manufacturing apparatus 1010 processes the wafer 1400, the temperature in the vicinity of the ceiling of the boat 1044 can be kept as it is. Can be measured. The ceiling thermocouple 1070 is hermetically sealed with a joint interposed between the seal cap 1038 and the center thermocouple 1068.

FIG. 5 shows an example of a detailed configuration of the lower thermocouple 1072.
As shown in FIG. 5, the lower thermocouple 1072 has a so-called L-shape, is installed between heat insulating plates at the lower part of the boat 1044, and is used to measure the temperature near the lower part of the boat 1044. Outputs the measured value. The lower thermocouple 1072 is provided at the position between the heat insulating plates adjacent to each other in the vertical direction among the heat insulating plates provided in a plurality below the boat 1044. You may install in the position below the heat insulating board located in the uppermost position of a board, or the lowermost among several heat insulating boards.

  Since the lower thermocouple 1072 is loaded or unloaded in the same manner as the boat 1044, the semiconductor manufacturing apparatus 1010 can measure the temperature near the lower portion of the boat 1044 while being installed even when the wafer 1400 is processed. The lower thermocouple 1072 is hermetically sealed with a joint on the seal cap 1038.

In the semiconductor manufacturing apparatus 1010 configured as described above, an example of an operation when the wafer 1400 is oxidized and diffused in the reaction tube 1014 will be described (see FIG. 1).
First, the boat 1044 is lowered by the boat elevator 1050. Next, a plurality of wafers 1400 are held on the boat 1044. Next, the heater 1052 is heated to bring the temperature in the reaction tube 1014 to a predetermined processing temperature.

  Then, the inside of the reaction tube 1014 is filled with an inert gas in advance by the MFC 1024 connected to the gas supply pipe 1016, and the boat 1044 is lifted and moved into the reaction tube 1014 by the boat elevator 1050. Is maintained at a predetermined processing temperature. After keeping the inside of the reaction tube 1014 at a predetermined pressure, the boat 1044 and the wafer 1400 held by the boat 1044 are rotated by the rotation shaft 1040. At the same time, a processing gas is supplied from a gas supply pipe 1016 or water vapor is supplied from a moisture generator (not shown). The supplied gas descends the reaction tube 1014 and is evenly supplied to the wafer 1400.

In the reaction tube 1014 during the oxidation / diffusion process, the pressure is controlled by the APC 1030 so as to be a predetermined pressure through the exhaust pipe 1018, and the oxidation / diffusion process of the wafer 1400 is performed for a predetermined time. When this oxidation / diffusion process is completed, the gas in the reaction tube 1014 is replaced with an inert gas in order to move to the oxidation / diffusion process of the wafer 1400 to be processed next among the wafers 1400 that are continuously processed. At the same time, the pressure is changed to normal pressure, and then the boat 1044 is lowered by the boat elevator 1050 to take out the boat 1044 and the processed wafer 1400 from the reaction tube 1014.
The processed wafer 1400 on the boat 1044 taken out from the reaction tube 1014 is replaced with an unprocessed wafer 1400, and is again raised into the reaction tube 1014, and the wafer 1400 is subjected to oxidation / diffusion processing.

  FIG. 6 schematically shows the configuration of the semiconductor manufacturing apparatus 1010 according to the first embodiment to which the present invention is applied, in addition to the configuration shown in FIGS. 1 to 5. With these configurations, it is possible to suppress variations in the thickness of the thin film formed on the wafer 1400 to be processed and to make the thickness of the formed thin film uniform.

  As illustrated in FIG. 6, the semiconductor manufacturing apparatus 1010 includes an exhaust pipe 1082 and includes an exhaust unit 1080 (exhaust apparatus) that exhausts cooling gas. The exhaust pipe 1082 is used as a cooling gas exhaust path, the proximal end side is connected to, for example, the upper part of the reaction tube 1014, and the distal end side is connected to an exhaust facility such as a factory where the semiconductor manufacturing apparatus 1010 is installed. The cooling gas is exhausted through

  The exhaust unit 1080 includes a cooling gas exhaust device 1084 made of, for example, a blower, and a radiator 1086. The cooling gas exhaust device 1084 is attached to the distal end side of the exhaust pipe 1082, and the radiator 1086 is attached at a position between the base end portion of the exhaust pipe 1082 and the cooling gas exhaust device 1084. An inverter 1078 is connected to the cooling gas exhaust device 1084, and the inverter 1078 controls the flow rate of the gas exhausted by the cooling gas exhaust device 1084, for example, by controlling the rotational speed of the blower.

  Shutters 1090 and 1090 are provided on the upstream side and the downstream side of the radiator 1086 in the exhaust pipe 1082 in the flow direction of the cooling gas, respectively. The shutters 1090 and 1090 are opened and closed under the control of a shutter control unit (shutter control device) (not shown).

  A pressure sensor 1092 used as a detection unit (detection device) for detecting the pressure in the exhaust pipe 1082 is provided at a position of the exhaust pipe 1082 between the radiator 1086 and the cooling gas exhaust device 1084. Here, as a position where the pressure sensor 1092 is provided, it is desirable that the pressure sensor 1092 be provided as close as possible to the radiator 1086 in the exhaust pipe 1082 connecting the cooling gas exhaust device 1084 and the radiator 1086.

  As described above, the control unit 1200 (control device) includes the gas flow rate control unit 1202 (gas flow rate control device), the temperature control unit 1204 (temperature control device), the pressure control unit 1206 (pressure control device), and the drive control unit. 1208 (drive control device) (see FIG. 1), and in addition, as shown in FIG. 6, it has a cooling gas flow rate control unit 1220 (cooling gas control device).

The cooling gas flow rate controller 1220 includes a subtractor 1222, a PID calculator 1224, a frequency converter 1226, and a frequency indicator 1228.
The target pressure value S is input from the host controller 1300 to the subtractor 1222. The subtractor 1222 receives the pressure value A measured by the pressure sensor 1092 in addition to the pressure target value S, and the subtractor 1222 outputs a deviation D obtained by subtracting the pressure value A from the pressure target value S. Is done.

The deviation D is input to the PID calculator 1224. The PID calculator 1224 performs PID calculation based on the input deviation D and calculates the operation amount X. The calculated manipulated variable X is input to the frequency converter 1226, converted to the frequency W by the frequency converter 1226, and output. The output frequency W is input to the inverter 1078, and the frequency of the cooling gas exhaust device 1084 is changed.
The pressure value A from the pressure sensor 1092 is input to the subtractor 1222 constantly or at predetermined time intervals so that the deviation D between the pressure target value S and the pressure value A becomes 0 based on the pressure value A. The control of the frequency of the cooling gas exhaust device 1084 is continued.

  Instead of calculating the frequency W by the PID calculator 1224, the frequency setting value T is input from the host controller 1300 to the frequency indicator 1228, and the frequency W is input from the frequency indicator 1228 to the inverter 1078, thereby cooling. The frequency of the gas exhaust device 1084 may be changed.

  As described above, in the semiconductor manufacturing apparatus 1010, the cooling gas exhaust apparatus 1084 is used to perform cooling by flowing air used as a cooling medium between the inside of the heater 1052 and the reaction tube 1014. The wire constituting the heater 1052 and the reaction tube 1014 are cooled to control the temperature. For this reason, the temperature controllability of the wafer 1400 held in the reaction tube 1014 is good.

  That is, heat transfer includes heat transfer due to radiation and heat transfer due to transmission. In the semiconductor manufacturing apparatus 1010, only heat transfer due to radiation is transmitted to the wafer 1400 and contributes to the temperature rise of the wafer 1400, while heat transfer due to transfer is performed. Most of the air is cooled by the air flowing between the inside of the heater 1052 and the reaction tube 1014 and is dissipated. For this reason, the heater 1052 output is increased in order to compensate for the amount of heat released by air cooling in the vicinity of the wire of the heater 1052. As the heater 1052 output increases, the wire temperature of the heater 1052 becomes higher and the radiant heat increases. Here, heat transfer by radiation has a much higher propagation speed than heat transfer by transfer. For this reason, the semiconductor manufacturing apparatus 1010 in which the wafer in the reaction tube 1014 is heated by radiant heat has good temperature controllability.

  Further, the temperature of the reaction tube 1014 also decreases by cooling with air. When the temperature of the reaction tube 1014 decreases, heat transfer from the edge portion of the wafer 1400 to the reaction tube 1014 is performed. As a result, the temperature distribution of the wafer 1400 is lower at the edge portion than at the central portion, and the temperature at the edge portion is higher than the temperature at the central portion. It is possible to obtain a so-called convex temperature distribution that is lower than the above temperature.

  When the temperature distribution of the wafer 1400 is uniform, the film thickness of the thin film formed on the wafer 1400 becomes a concave shape in which the film thickness of the edge portion is larger than the film thickness of the central portion. On the other hand, if the temperature distribution of the wafer 1400 is made convex by controlling the temperature as described above, the uniformity of the film thickness of the wafer 1400 can be improved.

  In the semiconductor manufacturing apparatus 1010, as described above, the front end side of the exhaust pipe 1082 is connected to an exhaust facility such as a factory in which the semiconductor manufacturing apparatus 1010 is installed, and the cooling gas is supplied from the reaction pipe 1014 through the exhaust pipe 1082. Therefore, the effect of cooling by the cooling gas exhaust device 1084 may vary greatly depending on the exhaust pressure of an exhaust facility such as a factory. If the cooling effect of the cooling gas exhaust device 1084 fluctuates, the temperature distribution on the surface of the wafer 1400 is also affected. Therefore, the frequency of the cooling gas exhaust device 1084 is set so that the exhaust pressure from the exhaust pipe 1082 is constant. Is controlling.

Further, in the semiconductor manufacturing apparatus 1010, for example, when maintenance such as exchanging a thermocouple such as the first thermocouple 1062 is performed, an error occurs in a position where the first thermocouple 1062 is attached, and the maintenance is not performed. There is a possibility that a difference occurs in the film thickness of the thin film formed between the wafer 1400 processed in the first step and the wafer 1400 processed after the maintenance. Further, when there are a plurality of semiconductor manufacturing apparatuses 1010 having the same specification, there is a possibility that a difference occurs in the film thickness of the thin film formed by each semiconductor manufacturing apparatus 1010.
Therefore, in the semiconductor manufacturing apparatus 1010, for example, before and after maintenance, or in order to improve the uniformity of a thin film formed between a plurality of semiconductor manufacturing apparatuses 1010 having the same specification, further measures are taken.

  That is, in the semiconductor manufacturing apparatus 1010, the value from the center thermocouple 1068 when the wafer 1400 is controlled to have a predetermined temperature based on the output from the second thermocouple 1064. The temperature of the center of the wafer 1400 and the temperature of the ceiling of the boat 1044, which is a value from the ceiling thermocouple 1070, are acquired. For example, after maintenance is performed, the pressure setting is obtained from the acquired data. A correction value for the value is calculated. This will be specifically described below.

FIG. 7 is an explanatory diagram for explaining a configuration / method for correcting the set temperature using the center temperature correction value of the wafer 1400. The control unit 1200 described above has a wafer center temperature correction calculation unit 1240 (wafer center temperature correction calculation device).
Here, a case where the second thermocouple 1064 is 600 will be described as an example. The wafer center temperature correction calculation unit 1240 outputs the output value (wafer center temperature) of the center thermocouple 1068 and the output value (ceiling temperature) of the ceiling thermocouple 1070 when controlled by the second thermocouple 1064. And the deviation from the output value (internal temperature) of the second thermocouple 1064 is stored.

At this time,
Stored as internal temperature−wafer center temperature = wafer center temperature deviation or internal temperature−ceiling temperature = ceiling temperature deviation. Further, the pressure set value at that time (differential pressure with respect to the atmospheric pressure) is also stored at the same time. The set temperature is constant, the pressure set value is changed, and the above data is acquired under a plurality of conditions.

For example, in the case where the set temperature is 600, the internal temperature is 600, and the wafer center temperature is 607, when the internal temperature is regarded as the temperature of the edge of the wafer 1400, the set temperature is 600, but the wafer center The temperature is shifted to 607.
Therefore, by outputting wafer center temperature deviation = 600−607-7 to the host controller 1300 and correcting the set value, the center of the wafer 1400 can be changed to 600 using the host controller 1300. It becomes.
FIG. 8 shows an example of a plurality of acquired data.

Next, calculation of the pressure correction value will be described.
For example, the current boat ceiling temperature deviation is t1, the current pressure set value is p1, the boat ceiling temperature correction value corresponding to p1 is b1, the positive pressure measurement value in the acquired data is pp, and the positive pressure measurement value Assuming that the boat ceiling temperature correction value is tp, the negative pressure measurement value in the acquired data is pm, and the negative boat ceiling temperature correction value is tm, the pressure correction amount px is larger or smaller than t1 and b1. Accordingly, it is obtained by the following expressions (11) and (12).

That is,
If t1 <b1,
px = (b1-t1) * {(p1-pm) / (b1-tm)} (Expression 11)
If t1> b1,
px = (b1-t1) * {(pp-p1) / (tp-b1)} (Expression 12)
Is required.
Hereinafter, the case of t1 <b1 and the case of t1> b1 will be described with specific examples.

FIG. 9 is an explanatory diagram for explaining the calculation of the pressure correction amount px in the case of t1 <b1.
First, as b1-t1, a temperature deviation between the boat ceiling temperature deviation b1 acquired in advance and the current boat ceiling temperature deviation t1 is obtained.
Next, as (p1−pm) / (b1−tm), “current pressure set value p1 and corresponding boat ceiling temperature deviation b1” and “negative pressure value pm and corresponding values are obtained from the previously acquired data. The pressure correction amount for adding +1 to the boat ceiling temperature deviation is determined from the relationship with the “boat ceiling temperature deviation tm”.

In the example shown in FIG. 9, the boat ceiling temperature correction value corresponding to 300 Pa is −4, and “−6” of No. 4 in FIG.
Further, from the data acquired in advance, the pressure set value p1 is 300 pa and the boat ceiling temperature deviation b1 is −4.
Further, when the pressure set value pm is 500 pa and the boat ceiling temperature deviation tm is changed +2 from −6 to −4, a pressure correction amount of 300 Pa (p1) −500 Pa (pm) = − 200 Pa is required. .

The case where the current pressure measurement value is 300 Pa and the current boat ceiling temperature deviation obtained from the measurement result is −5 is taken as an example.
In this case, first, the boat ceiling temperature correction value corresponding to the currently used pressure setting value is used as a search key, and the closest boat ceiling correction values from the search key to the plus side and the minus side are shown in FIG. Selection is made from a plurality of acquired data shown, and calculation is performed from the selected data.
From the above
+1 minute pressure correction amount = −200 Pa / + 2 = −100 Pa /
Is required.
In other words, since we want to correct (b1-t1) by +1,
+1 * (− 100 Pa /) = − 100 Pa
Is calculated.

  FIG. 10 is an explanatory diagram for explaining the calculation of the pressure correction amount px when t1> b1.

First, the temperature deviation between the boat ceiling temperature deviation b1 acquired in advance and the current boat ceiling temperature deviation t1 is obtained.
Next, as (pp−p1) / (tp−b1), “current pressure set value p1 and boat ceiling temperature deviation b1 corresponding to the current pressure set value p1” and “plus side in the acquired data are From the relationship between the pressure value pp and the boat ceiling temperature deviation tp corresponding thereto, a pressure correction amount for decrementing the boat ceiling temperature deviation by −1 is obtained.

Here, taking the case where the current pressure measurement value is 300 Pa and the current boat ceiling temperature deviation obtained from the measurement result is −3, for example, according to the previously acquired data shown in FIG. 8, the pressure set value pp is 300 Pa. Therefore, the boat ceiling temperature deviation b1 becomes −4. Further, the pressure set value p1 is 200 Pa, and the boat ceiling temperature deviation tp is −2.
For this reason, in order to change -2 temperature from -2 which is boat ceiling part temperature deviation tp to -4 which is b1 from the data acquired beforehand,
300 Pa (p1) −200 Pa (pp) = + 100 Pa
The pressure correction amount is required.

That is, the boat ceiling temperature correction value corresponding to 300 Pa is −4, and “−2” of No. 2 in FIG.
From the above
+1 minute pressure correction amount = −100 Pa / 2 = −50 Pa / is obtained.
In this example, since we want to correct (b1-t1) =-1 minute,
A pressure correction amount of −1 * (− 50 Pa /) = + 50 Pa is calculated.

  The pressure correction amount px when either one of the boat ceiling temperature deviation t1 and the boat ceiling temperature correction value b1 is larger than the other has been described above, but t1 and b1 are the same value. There is no need for correction.

In addition, in the calculation of the pressure correction value described above, the detected positive or negative pressure value, the corresponding boat ceiling temperature deviation, the current pressure set value p1 and the corresponding boat ceiling temperature. The reason why the pressure correction amount for increasing the boat ceiling temperature deviation by 1 is obtained from the relationship of the deviation b1 is that the pressure correction amount may vary depending on the boat ceiling temperature.
For example, the pressure correction amount for changing the boat ceiling temperature correction value by +2 from −6 to −4 and the pressure correction amount for changing +2 from −4 to −2 are the radiant heat from the strand of the heater 1052. , The heat transfer from the edge portion of the wafer 1400 to the reaction tube 1014, and the relationship between the heat transfer between the center portion of the wafer 1400 and the edge portion of the wafer 1400 do not necessarily coincide with each other.

  Therefore, in the semiconductor manufacturing apparatus 1010 according to this embodiment, in order to calculate the pressure correction amount from the deviation change state of the closer boat ceiling temperature correction value, from the boat ceiling temperature deviation corresponding to the current pressure setting value, If the current boat ceiling temperature deviation is low, calculate the pressure correction amount using the minus side boat ceiling temperature deviation and the pressure setting value, and use the boat ceiling temperature deviation corresponding to the current pressure setting value to When the boat ceiling temperature deviation is high, the pressure correction amount is calculated using the plus side boat ceiling temperature deviation and the pressure set value.

In the semiconductor manufacturing apparatus 1010 according to the first embodiment to which the present invention is applied configured as described above, although devised to suppress variations in the film thickness formed on the wafer 1400, it is still a wafer. There is a problem that the thin film formed in 1400 may vary.
Further, in the semiconductor manufacturing apparatus 1010 according to the first embodiment to which the present invention is applied configured as described above, the temperature of only a part of the wafer 1400 in the circumferential direction is detected. There was a problem that the temperature difference in the circumferential direction could not be improved.
Moreover, in the semiconductor manufacturing apparatus 1010 according to the first embodiment to which the present invention is applied configured as described above, the temperature of the wafer 1400 is controlled when a defect occurs in one of the plurality of temperature sensors. In some cases, the processing of the wafer 1400 may not be performed continuously.
In view of this, the semiconductor manufacturing apparatus 1010 according to the first and second embodiments of the present invention, which will be described later, further solves the above-mentioned problems by further original devices. Hereinafter, first and second embodiments according to embodiments of the present invention will be described.

FIG. 11 shows a main part of the semiconductor manufacturing apparatus 1010 according to the first embodiment of the present invention.
In the semiconductor manufacturing apparatus 1010 according to the first embodiment of the present invention, similarly to the first embodiment to which the present invention is applied, the heater 1052 is disposed concentrically on the outer side of the reaction tube 1014. 1 thermocouple 1062, second thermocouple 1064, and third thermocouple 1066 (see FIG. 1).

In the first embodiment to which the present invention described above is applied, only one second thermocouple 1064 is provided in the circumferential direction of the wafer 1400. On the other hand, in the first embodiment, a plurality of second thermocouples 1064 are provided.
That is, as shown in FIG. 11, the semiconductor manufacturing apparatus 1010 according to the first embodiment includes a main second thermocouple 1064a (hereinafter referred to as an internal main thermocouple 1064a) and a sub second thermocouple 1064b. (Hereinafter referred to as internal sub-thermocouple 1064b), two second thermocouples (hereinafter referred to as internal side thermocouples 1064b) provided at positions between internal main thermocouple 1064a and internal sub-thermocouple 1064b in the circumferential direction of wafer 1400. Thermocouple 1064c and internal side thermocouple 1064d). The second thermocouple 1064 and the ceiling thermocouple may be integrally formed.

  Here, the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d are installed between the reaction tube 1014 and the boat 1044 (see FIG. 1), for example, It is also used to detect the temperature within 1014. Further, the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d have a plurality of temperature detections in the vertical direction, for example, four as shown by black circles in FIG. Each has a point, and each detects a temperature at a plurality of temperature detection points.

  The internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d each preferably have the same number of temperature detection points. In the first embodiment, , Each has four temperature detection points. Further, it is desirable that the plurality of temperature detection points respectively provided in the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d are at the same position (the same height) in the direction of gravity. By being at the same height in the direction of gravity, the accuracy of temperature control to be described later can be increased. That is, the temperature control of the heater is performed by calculating the average value of the temperature detection points of the thermocouples 1064 at the same height.

  The third thermocouple 1066 is installed between the reaction tube 1014 and the boat 1044, and is closer to the boat 1044 than the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d. It is installed at a position and used to detect the temperature at a position closer to the boat 1044.

  FIG. 12 schematically shows a position where the second thermocouple 1064 is arranged in the plane. As shown in FIG. 12, the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d are arranged in a plane parallel to the surface of the wafer 1400 in the circumferential direction of the wafer 1400. It is arranged at equal intervals. That is, the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d are arranged on the same circumference, and the angle formed between the second thermocouple adjacent to each other and the center of the circle However, they are all about 90 degrees. Thus, by arranging the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d at equal intervals in the circumferential direction of the wafer 1400, the average at the peripheral portion of the wafer 1400 is obtained. Temperature can be measured.

  FIG. 13 illustrates a control method and a configuration for performing control in the semiconductor manufacturing apparatus 1010. In the first embodiment to which the present invention described above is applied, the semiconductor manufacturing apparatus 1010 has one second thermocouple 1064, and control is performed using this one thermocouple. On the other hand, in the semiconductor manufacturing apparatus 1010 according to the first embodiment, a value obtained by averaging the temperatures of the plurality of second thermocouples 1064 is used for control.

Specifically, as shown in FIG. 13, the output from the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d is an average temperature calculation that the control unit 1200 has. The average temperature calculation unit 1230 calculates the average value, and the average value is output to the PID calculation unit 1242 in the temperature control unit 1204. The output of the PID calculation unit is, for example, the heater 1052. It is used for control such as control.
That is, for example, temperature is averaged at the same height temperature detection points detected by a plurality of second thermocouples 1064 such as four, and PID control is performed so that a deviation of a preset temperature set value becomes zero. Thus, for example, the temperature of the circumferential portion of the wafer 1400 is controlled.

  As described above, when the boat 1044 rotates by averaging the temperatures at the same temperature detection points detected by the plurality of second thermocouples 1064 arranged in the circumferential direction on the wafer 1400 and controlling the temperature. Therefore, it is possible to predict the temperature in the vicinity of the edge portion (outer peripheral portion) of the wafer 1400, and to control the edge portion of the wafer 1400 with a more appropriate value.

However, in the semiconductor manufacturing apparatus 1010 according to the first embodiment described above, since the average value from the temperature detection point of the same height of the plurality of second thermocouples 1064 is used for control, If one or more of the temperature detection points at the same height of the second thermocouple 1064 fails, the output from the temperature detection points at the same height of the remaining normal second thermocouple 1064 is averaged and controlled. Will be continued. In this case, since a temperature difference occurs in the wafer circumferential direction of the wafer 1400, the edge portion of the wafer 1400 may not be controlled to an appropriate temperature.
Therefore, in the second embodiment of the present invention to be described later, it is possible to continue control even if a failure occurs in any of the second thermocouples 1064 by applying a unique device.

  Note that, in the semiconductor manufacturing apparatus 1010 according to the first embodiment of the present invention, the configurations other than those specifically described above are the same as those of the first embodiment to which the present invention is applied, and thus the description thereof is omitted. To do.

Subsequently, a semiconductor manufacturing apparatus 1010 according to the second embodiment of the present invention will be described.
FIG. 14 illustrates a control method and a configuration for performing control in the semiconductor manufacturing apparatus 1010 according to the second embodiment of the present invention. Note that in the semiconductor manufacturing apparatus 1010 according to the second embodiment, description of the same parts as those of the semiconductor manufacturing apparatus 1010 according to the first embodiment described above will be omitted.

The semiconductor manufacturing apparatus 1010 according to the second embodiment calculates correction values for the set values of the plurality of temperature detection points of the plurality of second thermocouples 1064 in advance, and the plurality of second thermocouples 1064 have a plurality of correction values. A function for predicting and recovering temperatures detected by a plurality of detection points of the second thermocouple 1064 in which a failure has occurred using a calculated correction value when a failure occurs in any of the temperature detection points have.
That is, in the semiconductor manufacturing apparatus 1010 according to the second embodiment, the average value of the outputs of the plurality of temperature detection points of the plurality of second thermocouples 1064 when controlling at a certain set temperature, Deviations (correction values) between the average value and the outputs of the plurality of temperature detection points of each second thermocouple 1064 are acquired in advance.
Then, the plurality of temperature detection points of the second thermocouple 1064 in which the defect has occurred are determined to be defective from the correction values with the set temperature at the plurality of temperature detection points of the second thermocouple 1064 in which the defect has occurred. If the temperature that would otherwise be detected is predicted and the predicted value is used, the edge of the wafer 1400 can continue to be controlled to an appropriate temperature, and the film thickness of the thin film to be formed, The reproducibility of film quality is improved.

A more specific description will be given with reference to FIG.
Here, the temperature calculated by averaging the temperatures detected by a plurality of temperature detection points of the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d is controlled by 600. Take the case as an example.

  As shown in FIG. 14, the outputs from the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d are input to the arithmetic storage unit 1250 of the control unit 1200, respectively. The set temperature is input from the host controller 1300 to the arithmetic storage unit 1250. Further, the average value calculated by the storage calculation unit 1250 is output to the PID calculation unit 1242, and the output from the PID calculation unit 1242 is used for control such as control of the heater 1052, for example.

In this example, the control is performed with the temperature calculated by averaging the temperatures as 600, and therefore, a value of 600 is input as the set temperature from the host controller 1300 to the calculation storage unit 1250. In the following description, the output value from the internal main thermocouple 1064a is “main output value”, the output value from the internal sub thermocouple 1064b is “sub output value”, and the output value from the internal side thermocouple 1064c is “ The side output value is 1 ”and the internal side thermocouple 1064d is“ side output value 2 ”. In addition, the height of the temperature detection part of each thermocouple 1064 is made substantially the same.
In the following description, it is assumed that the main output value is 600.0, the sub output value is 599.5, the side output value 1 is 602.0, and the side output value 2 is 598.5.

In the arithmetic storage unit 1250, based on the values input from the internal main thermocouple 1064a, internal sub thermocouple 1064b, internal side thermocouple 1064c, internal side thermocouple 1064d and the value input from the host controller 1300 The deviation (correction value) between the value and the output value from each second thermocouple 1064 is calculated.
That is, the correction value of the internal main thermocouple 1064a (hereinafter referred to as “main correction value”), the correction value of the internal sub thermocouple 1064b (hereinafter referred to as “sub correction value”), and the correction value of the internal side thermocouple 1064c. (Hereinafter referred to as “side correction value 1”) and the correction value of the internal side thermocouple 1064d (hereinafter referred to as “side correction value 2”) are calculated as follows.

Main correction value = Main output value-Average value Sub correction value = Sub output value-Average value Side correction value 1 = Side output value 1-Average value Side correction value 2 = Side output value 2-Average value More specifically,
Main correction value = 600.0−600 = 0.00
Sub correction value = 599.5-600.0 = −0.50
Side correction value 1 = 602.0−600 = 2.00
Side correction value 2 = 598.5-600 = −1.50
Is calculated.
And it is memorize | stored in the calculation memory | storage part 1250 calculated as mentioned above.

Next, a case where a defect occurs in any of the internal main thermocouple 1064a, the internal sub thermocouple 1064b, the internal side thermocouple 1064c, and the internal side thermocouple 1064d will be described. Here, a case where a defect occurs in the internal side thermocouple 1064d is taken as an example.
If a defect occurs in the internal side thermocouple 1064d, the ambient temperature cannot be detected by the internal side thermocouple 1064d, and the average value from the four second thermocouples 1064 cannot be calculated. In the semiconductor manufacturing apparatus 1010 according to one embodiment, control based on the average value cannot be performed.
Therefore, in the semiconductor manufacturing apparatus 1010 according to the second embodiment, the side correction value 2 stored in advance in the arithmetic storage unit 1250 is used to output the internal side thermocouple 1064d unless there is a defect. An average output value of the temperature detection units at the same height of the four second thermocouples 1064 is calculated in anticipation of an output value that will be used.

That is,
Expected value of side output value 2 = set value + side correction value 2
The expected value of side output value 2 calculated by
Expected value of side output value 2 = 600.0 + (− 1.50) = 598.5
Is used to calculate the average value of the temperature detectors at the same height of the four second thermocouples 1064.
Here, the average value of the temperature detection units at the same height of the four second thermocouples 1064 when a defect occurs in the internal side thermocouple 1064d is:
Average value = (main output value + sub output value + side output value 1 + side output value 2 expected value) / 4
Is calculated as

  In the above description, a case where a defect has occurred in one of the temperature detectors of the same height of the four second thermocouples 1064 has been described as an example, but the same of the four second thermocouples 1064 is the same. Even when a defect occurs in two or more of the height temperature detection units, the average value is calculated in the same manner as described above. For example, if a defect occurs in the internal sub thermocouple 1064b in addition to the internal side thermocouple 1064d, the sub output value is also set to the same temperature of the four second thermocouples 1064 using the predicted value. The average value of the detector is calculated.

That is,
Expected sub output value = setting value + sub correction value as sub correction value,
(Main output value + Sub output value expected value + Side output value 1 + Side output value 2 expected value) / 4
The average value is calculated by.

  Next, a semiconductor manufacturing apparatus 1 according to a second embodiment to which the present invention is applied will be described.

[Semiconductor processing apparatus 1]
FIG. 15 is a diagram showing an overall configuration of the semiconductor processing apparatus 1 according to the second embodiment to which the present invention is applied.
FIG. 16 is a diagram illustrating the processing chamber 3 in a state where the boat 14 and the wafer 12 shown in FIG. 15 are accommodated.
FIG. 17 is a diagram showing the configuration of the first control program 40 that controls the peripheral components of the processing chamber 3 shown in FIGS. 15 and 16 and the processing chamber 3.

The semiconductor processing apparatus 1 is a so-called low pressure CVD apparatus that is used as a semiconductor manufacturing apparatus and processes a substrate such as a semiconductor.
As shown in FIG. 15, the semiconductor processing apparatus 1 includes a cassette transfer unit 100, a cassette stocker 102 provided on the back side of the cassette transfer unit 100, a buffer cassette stocker 104 provided above the cassette stocker 102, and a cassette stocker 102. The wafer mover 106 provided on the back side of the wafer, the boat elevator 108 provided on the back side of the wafer mover 106 and carrying the boat 14 on which the wafer 12 is set, and the processing chamber provided above the wafer mover 106 3 and a control unit 2 (control device).

[Processing chamber 3]
As shown in FIG. 16, the processing chamber 3 shown in FIG. 15 includes a hollow heater 32 used as a heating means, an outer tube (outer tube) 360, an inner tube (inner tube) 362, a gas introduction nozzle 340, a furnace mouth cover. 344, an exhaust pipe 346, a rotating shaft 348, for example, a manifold 350 made of stainless steel, an O-ring 351, a cooling gas passage 352, an exhaust passage 354, an exhaust portion 355 (exhaust device), and other components such as a processing gas flow rate control device ( The side part is covered with the heat insulating material 300-1, and the upper part is covered with the heat insulating material 300-2.
A plurality of heat insulating plates 140 are provided at the lower part of the boat 14.

The outer tube 360 is made of, for example, quartz that transmits light, and is formed in a cylindrical shape having an opening in the lower portion.
The inner tube 362 is made of, for example, quartz that transmits light, is formed in a cylindrical shape, and is disposed on the inner side of the outer tube 360 on a concentric circle thereof.
Therefore, a cylindrical space is formed between the outer tube 360 and the inner tube 362.

The heater 32 is a thermocouple or the like disposed between four temperature adjustment portions (U, CU, CL, L) 320-1 to 320-4 and an outer tube 360 that can set and adjust the temperature for each. External temperature sensors 322-1 to 322-4 and internal temperature sensors (in-furnace TC) 324 such as thermocouples arranged in the outer tube 360 corresponding to the temperature adjustment portions 320-1 to 320-4. -1 to 324-4.
The internal temperature sensors 324-1 to 324-4 may be provided inside the inner tube 362, may be provided between the inner tube 362 and the outer tube 360, or the temperature adjustment portions 320-1 to 320-1. Each may be bent every 320-4, and may be provided so as to detect the temperature of the wafer center between the wafers 12 and 12.

  Each of the temperature adjustment portions 320-1 to 320-4 of the heater 32 emits, for example, light for optically heating the wafer 12 from the periphery of the outer tube 360 and passes through the outer tube 360 to be absorbed by the wafer 12. Thus, the wafer 12 is heated (heated).

The cooling gas flow path 352 is formed between the heat insulating material 300-1 and the outer tube 360 so as to allow fluid such as cooling gas to pass therethrough, and the air inlet 353 provided at the lower end of the heat insulating material 300-1. The cooling gas supplied from is passed upward of the outer tube 360.
The cooling gas is, for example, air or nitrogen (N2).

In addition, the cooling gas channel 352 is configured such that the cooling gas blows out from between the temperature adjustment portions 320-1 to 320-4 toward the outer tube 360.
The cooling gas cools the outer tube 360, and the cooled outer tube 360 cools the wafer 12 set on the boat 14 from the circumferential direction (outer peripheral side).
That is, the outer tube 360 and the wafer 12 set on the boat 14 are cooled from the circumferential direction (outer peripheral side) by the cooling gas passing through the cooling gas flow path 352.

  An exhaust passage 354 used as a cooling gas exhaust passage is provided above the cooling gas passage 352. The exhaust passage 354 guides the cooling gas supplied from the intake port 353 and passing upward through the cooling gas passage 352 to the outside of the heat insulating material 300-2.

The exhaust passage 354 is provided with an exhaust section 355 (exhaust device) for exhausting the cooling gas.
The exhaust unit 355 is used as a cooling device, and includes a cooling gas exhaust device 356 made of a blower or the like and a radiator 357, and exhausts the cooling gas guided to the outside of the heat insulating material 300-2 through the exhaust passage 354 from the exhaust port 358. To do.
The radiator 357 cools the cooling gas heated by cooling the outer tube 360 and the wafer 12 in the processing chamber 3 with cooling water or the like.

  A shutter 359 is provided in the vicinity of the intake port 353 and the radiator 357, and the opening and closing of the cooling gas passage 352 and the exhaust passage 354 are controlled by a shutter control unit (shutter control device) (not shown).

  As shown in FIG. 17, the processing chamber 3 includes a temperature control device 370, a temperature measurement device 372, a processing gas flow rate control device (mass flow controller; MFC) 374, a boat elevator control device (elevator controller; EC) 376, A pressure sensor (PS) 378, a pressure regulator (APC; Auto Pressure Control (valve)) 380, a process gas exhaust device (EP) 382, and an inverter 384 are added.

The temperature control device 370 drives each of the temperature adjustment portions 320-1 to 320-4 according to control from the control unit 2 (control device).
The temperature measuring device 372 detects the temperature of each of the temperature sensors 322-1 to 322-4, 324-1 to 324-4, and outputs the temperature measurement value to the control unit 2.

The boat elevator control device (EC) 376 drives the boat elevator 108 according to the control from the control unit 2.
As the pressure adjusting device (hereinafter, APC) 380, for example, an APC, an N2 ballast controller, or the like is used.
Moreover, as EP382, a vacuum pump etc. are used, for example.
The inverter 384 controls the rotation speed of the cooling gas exhaust device 356 as a blower.

[Control unit 2]
FIG. 18 is a diagram showing a configuration of the control unit 2 shown in FIG.
As shown in FIG. 18, the control unit 2 includes a CPU 200, a memory 204, a display device, a display / input unit 22 (input device) including a touch panel and a keyboard / mouse, and a recording unit 24 (recording) such as an HD / CD. Device).
That is, the control unit 2 includes a configuration part as a general computer capable of controlling the semiconductor processing apparatus 1.
The control unit 2 executes a control program for reduced-pressure CVD processing (for example, the control program 40 shown in FIG. 17) using these components, controls each component of the semiconductor processing apparatus 1, and applies the wafer 12 to the wafer 12. On the other hand, a low-pressure CVD process described below is executed.

[First control program 40]
Refer to FIG. 17 again.
As shown in FIG. 17, the control program 40 includes a process control unit 400 (process control device), a temperature control unit 410 (temperature control device), a processing gas flow rate control unit 412 (processing gas flow rate control device), and a drive control unit 414. (Drive control device), pressure control unit 416 (pressure control device), process gas exhaust device control unit 418 (process gas control device), temperature measurement unit 420 (temperature measurement device), cooling gas flow rate control unit 422 (cooling gas control) Device) and a temperature set value storage unit 424 (temperature set value storage device).
The control program 40 is supplied to the control unit 2 via, for example, the recording medium 240 (FIG. 18), loaded into the memory 204, and executed.

The temperature setting value storage unit 424 stores the temperature setting value of the processing recipe for the wafer 12 and outputs it to the process control unit 400.
The process control unit 400 is configured according to a user operation on the display / input unit 22 (FIG. 18) of the control unit 2 or a processing procedure (processing recipe) recorded in the recording unit 24. As described later, a low pressure CVD process is performed on the wafer 12.

The temperature measurement unit 420 receives the temperature measurement values of the temperature sensors 322 and 324 via the temperature measurement device 372 and outputs the temperature measurement values to the process control unit 400.
The temperature control unit 410 receives the temperature set value and the temperature measurement values of the temperature sensors 322 and 324 from the process control unit 400, feedback-controls the power supplied to the temperature adjustment unit 320, and heats the inside of the outer tube 360. The wafer 12 is brought to a desired temperature.

The processing gas flow rate control unit 412 controls the MFC 374 and adjusts the flow rate of the processing gas or inert gas supplied into the outer tube 360.
The drive control unit 414 controls the boat elevator 108 to raise and lower the boat 14 and the wafer 12 held by the boat 14.
Further, the drive control unit 414 controls the boat elevator 108 to rotate the boat 14 and the wafer 12 held by the boat 14 via the rotation shaft 348.

The pressure control unit 416 receives the measured value of the processing gas in the outer tube 360 by PS378, controls the APC 380, and sets the processing gas in the outer tube 360 to a desired pressure.
The processing gas exhaust device control unit 418 controls the EP 382 to exhaust the processing gas or the inert gas inside the outer tube 360.

  The cooling gas flow rate control unit 422 controls the flow rate of the cooling gas exhausted by the cooling gas exhaust device 356 via the inverter 384.

In the following description, when any one of a plurality of constituent parts such as the temperature adjustment parts 320-1 to 320-4 is indicated without being specified, the temperature adjustment part 320 may be simply abbreviated.
In the following description, the number of component parts such as the temperature adjustment parts 320-1 to 320-4 may be indicated, but the number of component parts is exemplified for the purpose of clarification and clarification of the description. However, it is not intended to limit the technical scope of the present invention.

An O-ring 351 is disposed between the lower end of the outer tube 360 and the upper opening of the manifold 350, and between the furnace port lid 344 and the lower opening of the manifold 350, and between the outer tube 360 and the manifold 350. Is hermetically sealed.
An inert gas or a processing gas is introduced into the outer tube 360 via a gas introduction nozzle 340 located below the outer tube 360.

An exhaust pipe 346 (FIG. 16) connected to PS 378, APC 380, and EP 382 is attached to the upper portion of the manifold 350.
The processing gas flowing between the outer tube 360 and the inner tube 362 is discharged to the outside through the exhaust pipe 346, the APC 380, and the EP 382.

The APC 380 adjusts according to an instruction from the pressure control unit 416 so that the inside of the outer tube 360 becomes a preset desired pressure according to the control based on the pressure measurement value in the outer tube 360 by the PS 378.
That is, the APC 380 adjusts according to the instruction of the pressure control unit 416 so that the inside of the outer tube 360 becomes normal pressure when the inert gas is to be introduced so that the inside of the outer tube 360 becomes normal pressure, When the inside of the tube 360 is set to a low pressure and a processing gas is to be introduced so as to process the wafer 12, the inside of the outer tube 360 is adjusted according to an instruction from the pressure control unit 416 so as to have a desired low pressure.

A boat 14 holding a large number of semiconductor substrates (wafers) 12 is connected to a lower rotating shaft 348 of the boat 14.
Furthermore, the rotating shaft 348 is connected to the boat elevator 108 (FIG. 15), and the boat elevator 108 raises and lowers the boat 14 at a predetermined speed according to control via the EC 376.
Further, the boat elevator 108 rotates the wafer 12 and the boat 14 at a predetermined speed via the rotation shaft 348.

A wafer 12 used as an object to be processed and used as a substrate is conveyed in a state of being loaded in a wafer cassette 490 (FIG. 15), and is loaded on the cassette transfer unit 100.
The cassette transfer unit 100 transfers the wafer 12 to the cassette stocker 102 or the buffer cassette stocker 104.
The wafer mover 106 takes out the wafers 12 from the cassette stocker 102 and loads them in multiple stages in a horizontal state on the boat 14.

The boat elevator 108 raises the boat 14 loaded with the wafers 12 and guides the boat 14 into the processing chamber 3.
Further, the boat elevator 108 lowers the boat 14 loaded with the processed wafers 12 and removes it from the processing chamber 3.

[Temperature and film thickness of wafer 12]
FIG. 19 is a diagram illustrating the shape of the wafer 12 to be processed in the semiconductor processing apparatus 1 (FIG. 15).
The surface of the wafer 12 (hereinafter, the surface of the wafer 12 is also simply referred to as the wafer 12) has a shape as shown in FIG.
In addition, the wafer 12 is heated from the periphery of the outer tube 360 by the light emitted from the temperature adjustment portions 320-1 to 320-4 and transmitted through the outer tube 360.

Therefore, when the edge of the wafer 12 absorbs a lot of light and no cooling gas flows through the cooling gas flow path 352, the temperature of the edge of the surface of the wafer 12 becomes higher than the temperature of the center. .
In other words, the temperature adjustment portions 320-1 to 320-4 indicate that the temperature is higher as it is closer to the outer periphery of the wafer 12, and the temperature is lower as it is closer to the center portion. Temperature deviation will occur in the wafer 12.

Further, since a processing gas such as a reaction gas is also supplied from the outer peripheral side of the wafer 12, depending on the type of film formed on the wafer 12, the reaction speed may be different between the end portion and the central portion of the wafer 12. .
For example, a processing gas such as a reaction gas is consumed at the end of the wafer 12 and then reaches the center of the wafer 12, so that the concentration of the processing gas is higher at the center of the wafer 12 than at the end of the wafer 12. It will be lower.
Therefore, even if there is no temperature deviation between the end portion and the center portion of the wafer 12, the thickness of the film formed on the wafer 12 due to the supply of the reaction gas from the outer peripheral side of the wafer 12. However, the end portion and the center portion may be non-uniform.

  On the other hand, when the cooling gas passes through the cooling gas flow path 352, as described above, the outer tube 360 and the wafer 12 set in the boat 14 are cooled from the circumferential direction (outer peripheral side). That is, the processing chamber 3 heats the temperature of the central portion of the wafer 12 to a predetermined set temperature (processing temperature) by the temperature adjustment portion 320, and allows the cooling gas to pass through the cooling gas flow path 352 as necessary. By cooling the outer peripheral side, different temperatures can be set for the central portion and the end portion of the wafer 12, respectively.

  In this way, in order to form a uniform film on the wafer 12, heating control (control including heating and cooling, etc.) for adjusting the film thickness in accordance with the reaction rate for forming the film on the wafer 12 and the like. ) Is made. In the heating control, the control unit 2 uses the measured value of the internal temperature sensor 324 to control the temperature adjustment portion 320 of the heater 32, or the control unit 2 uses the cooling gas flow rate control unit 422 and the inverter 384 to control the cooling gas. This is done by at least one of controlling the exhaust device 356.

[Outline of low-pressure CVD process by semiconductor processing apparatus 1]
The semiconductor processing apparatus 1 controls the semiconductor wafers 12 arranged at predetermined intervals in the processing chamber 3 under the control of a control program 40 (FIG. 17) executed on the control unit 2 (FIGS. 15 and 18). Then, a Si3N4 film, a SiO2 film, a polysilicon (Poly-Si) film, and the like are formed by CVD.

The film formation using the processing chamber 3 will be further described.
First, the boat elevator 108 lowers the boat 14.
A desired number of wafers 12 to be processed are set in the lowered boat 14, and the boat 14 holds the set wafers 12.

Next, each of the four temperature adjustment portions 320-1 to 320-4 of the heater 32 heats the inside of the outer tube 360 according to the setting so that the central portion of the wafer 12 becomes a predetermined constant temperature. Heat.
On the other hand, the cooling gas flows through the cooling gas channel 352 according to the setting, and the outer tube 360 and the wafer 12 set in the boat 14 are cooled from the circumferential direction (outer peripheral side).

Next, through the gas introduction nozzle 340 (FIG. 16), the MFC 374 adjusts the flow rate of the introduced gas to introduce and fill the outer tube 360 with an inert gas.
The boat elevator 108 raises the boat 14 and moves it into the outer tube 360 filled with an inert gas having a desired processing temperature.

Next, the inert gas in the outer tube 360 is exhausted by the EP 382, the inside of the outer tube 360 is evacuated, and the boat 14 and the wafer 12 held by the boat 14 are rotated via the rotating shaft 348.
In this state, when the processing gas is introduced into the outer tube 360 via the gas introduction nozzle 340, the introduced processing gas rises in the outer tube 360 and is uniformly supplied to the wafer 12.

EP 382 exhausts the processing gas from the outer tube 360 during the low-pressure CVD process through the exhaust pipe 346, and the APC 380 sets the processing gas in the outer tube 360 to a desired pressure.
As described above, the low pressure CVD process is performed on the wafer 12 for a predetermined time.

When the low-pressure CVD process is completed, the processing gas inside the outer tube 360 is replaced with an inert gas and the pressure is further increased to the next process for the wafer 12.
Further, the cooling gas is caused to flow through the cooling gas flow path 352, and the inside of the outer tube 360 is cooled to a predetermined temperature.
In this state, the boat 14 and the processed wafer 12 held by the boat 14 are lowered by the boat elevator 108 and taken out from the outer tube 360.
Next, the boat elevator 108 raises the boat 14 on which the wafer 12 to be subjected to the low pressure CVD process is held, and sets the boat 14 in the outer tube 360.
The following reduced-pressure CVD process is performed on the wafer 12 set in this way.

The film thickness can be controlled if the cooling gas flows between before the wafer 12 is processed and until the end of the processing. However, when the boat 14 in which the wafer 12 is set is moved into the outer tube 360, Also, when the boat 14 is taken out from the outer tube 360, it is preferably flowed.
Thereby, it is possible to prevent the temperature from fluctuating due to heat in the processing chamber 3 due to the heat capacity of the processing chamber 3, and to improve the throughput.

In the film forming process described above, the heater 32 controls the end (periphery) temperature and the center of the wafer 12 by the cooling gas while controlling the center temperature of the wafer 12 to be a constant temperature according to the set temperature. By controlling the temperature so as to provide a temperature difference with respect to the temperature, the in-plane film thickness uniformity of the wafer 12 and further the film thickness uniformity between the surfaces can be improved without changing the film quality. For example, when a CVD film such as a Si3N4 film is formed, if the film formation process is performed while changing the processing temperature, the refractive index of the film may vary depending on the processing temperature, or the processing temperature may be lowered from a high temperature to a low temperature. However, when the film formation process is performed, the film changes from a film having a low etching rate to a film having a high etching rate in accordance with the processing temperature.
Further, in the generation of the Si3N4 film, if the film forming process is performed while the processing temperature is lowered from the high temperature to the low temperature, the film changes from a film having a high stress value to a film having a low stress value according to the processing temperature.

  Therefore, in the semiconductor processing apparatus 1, the control unit 2 controls the temperature of the outer tube 360 by controlling the temperature of the temperature adjustment portion 320 and the flow rate of the cooling gas passing through the cooling gas flow path 352, so that the wafer 12, etc. By controlling the in-plane temperature of the substrate, it is possible to control the uniformity of the thickness of the film formed on the substrate while preventing the film quality from changing.

[Exhaust pressure and film thickness]
As described above, when a film is formed on the wafer 12 by the semiconductor processing apparatus 1, the control unit 2 controls the temperature adjustment portion 320 of the heater 32 using the measured value of the internal temperature sensor 324, Heating control is performed by at least one of the control unit 2 controlling the cooling gas exhaust device 356 via the cooling gas flow rate control unit 422 and the inverter 384. When the cooling gas flows through the cooling gas channel 352, the cooling gas passes through the cooling gas channel 352 and the exhaust channel 354 and is exhausted from the exhaust port 358 by the exhaust unit 355. The exhaust port 358 is connected to an exhaust facility such as a factory (not shown). When the exhaust facility sucks the cooling gas from the exhaust passage 354 with the facility exhaust pressure, the exhaust passage 354 exhausts the exhaust gas.

The facility exhaust pressure is affected by the conductance due to the distance of the piping from the exhaust facility to the exhaust port 358, the shape of the piping, the route of the piping, etc., or the number of devices connected to the exhaust facility such as a factory. Therefore, there is a difference for each exhaust facility, and even the same exhaust facility may fluctuate.
When the facility pressure changes, the amount of gas flowing through the cooling gas flow path 352 changes even if the same amount of cooling gas is supplied.
For example, if the facility exhaust pressure changes from 200 Pa to 150 Pa, the flow rate of the cooling gas flowing through the cooling gas flow path 352 decreases due to the effect of the facility exhaust pressure fluctuation.
On the other hand, if the facility exhaust pressure changes from 150 Pa to 200 Pa, the flow rate of the cooling gas flowing through the cooling gas flow path 352 increases due to the effect of the facility exhaust pressure fluctuation.

Thus, when the flow rate of the cooling gas flowing through the cooling gas flow path 352 changes due to the change in the facility pressure, the cooling capacity caused by flowing the cooling gas is affected. For example, the central portion of the wafer 12 has a predetermined set temperature in advance. Even if the temperature control and the cooling gas flow rate control are performed based on the measurement value by the internal temperature sensor 324 so that the end portion of the wafer 12 becomes lower than the processing temperature, the outer tube 360 and the boat 14 are set. The cooling performance from the circumferential direction with respect to the wafer 12 is changed.
When the cooling performance in the circumferential direction changes, for example, the edge of the wafer 12 becomes higher than the processing temperature, and there may be a problem that the reproducibility of the film thickness in the wafer 12 surface cannot be obtained. It was.

  As described above, in the semiconductor processing apparatus 1 according to the second embodiment to which the present invention is applied, although the reproducibility of the film thickness of the wafer 12 is good when the facility exhaust pressure is kept constant, If the atmospheric pressure is not constant, the film thickness of the wafer 12 may not be reproducible and the film thickness may not be uniform.

Therefore, in the semiconductor processing apparatus 1 according to the third embodiment to which the present invention described below is applied, the film thickness of the wafer 12 can be made uniform even if the facility exhaust pressure varies or changes. Has its own ingenuity.

FIG. 20 is a diagram showing a configuration of the semiconductor processing apparatus 1 according to the third embodiment to which the present invention is applied.
The semiconductor processing apparatus 1 according to the third embodiment to which the present invention is applied has a configuration provided in the semiconductor processing apparatus 1 according to the second embodiment to which the present invention shown in FIGS. Even if the equipment exhaust pressure varies or changes, it has a unique configuration for making the film thickness of the wafer 12 uniform.

  As shown in FIG. 20, in the semiconductor processing apparatus 1, a pressure sensor 31 that detects the pressure in the pipe is provided in a pipe connecting the cooling gas exhaust device 356 of the pipe of the exhaust unit 355 and the radiator 357. . As a position where the pressure sensor 31 is provided, it is desirable that the pressure sensor 31 is provided as close as possible to the radiator 357 in the pipe connecting the cooling gas exhaust device 356 and the radiator 357. By installing the pressure sensor 31 at a position close to the radiator 357, the pressure from the radiator 357 to the pressure sensor 31 is affected by the length of the pipe, the route of the pipe, the shape of the pipe, etc. This is because loss can be prevented from occurring.

The control program 40 is a process control unit 400 (process control device), a temperature control unit 410 (temperature control device), and a process gas flow rate control unit 412 (process gas), as in the semiconductor processing apparatus 1 that is the premise of the present invention described above. Flow control device), drive control unit 414 (drive control device), pressure control unit 416 (pressure control device), process gas exhaust device control unit 418 (process gas exhaust control device), temperature measurement unit 420 (temperature control device), A cooling gas flow rate control unit 422 (cooling gas control device) and a temperature set value storage unit 424 (temperature control device) are included.
FIG. 20 shows a process control unit 400 and a cooling gas flow rate control unit 422. The temperature control unit 410, the process gas flow rate control unit 412, the drive control unit 414, the pressure control unit 416, the process gas exhaust device control unit 418, the temperature The measurement unit 420 and the temperature set value storage unit 424 are not shown.
The control program is supplied to the control unit 2 via, for example, the recording medium 240 (FIG. 20), loaded into the memory 204, and executed, as in the semiconductor processing apparatus 1 which is the premise of the present invention described above.

The cooling gas flow rate control unit 422 includes a subtractor 4220, a PID calculator 4222, a frequency converter 4224, and a frequency indicator 4226.
The pressure target value S is input from the process control unit 400 to the subtractor 4220.
Here, the pressure target value S is obtained in advance so that the center of the wafer 12 has a predetermined set temperature (processing temperature) and the end of the wafer 12 is lower than the processing temperature. The temperature correction value of the internal temperature sensor 324 stored in the storage unit 424 and the pressure value corresponding to this temperature correction value can be used.
In addition to the pressure target value S, the pressure value A measured by the pressure sensor 31 is input to the subtractor 4220, and the deviation D obtained by subtracting the pressure value A from the pressure target value S is output by the subtractor 4220. .

The deviation D is input to the PID calculator 4222. The PID calculator 4222 performs a PID calculation based on the input deviation D and calculates an operation amount X. The calculated manipulated variable X is input to the frequency converter 4224, converted into the frequency W by the frequency converter 4224, and output.
The output frequency W is input to the inverter 384, and the frequency of the cooling gas exhaust device 356 is changed.

The pressure value A from the pressure sensor 31 is input to the subtractor 4220 constantly or at predetermined time intervals so that the deviation D between the pressure target value S and the pressure value A becomes 0 based on the pressure value A. Then, the control of the frequency of the cooling gas exhaust device 356 is continued.
As described above, the frequency of the cooling gas exhaust device 356 is controlled via the inverter 384 so that the deviation D between the pressure value A measured by the pressure sensor 31 and the predetermined pressure target value S is eliminated. That is, feedback control is performed on the frequency that is controlled so that the deviation D is eliminated, and the cooling gas flow rate control unit 422 controls the flow rate of the cooling gas based on the value after the feedback.

  Instead of calculating the frequency W by the PID calculator 4222, the frequency setting value T is input from the process control unit 400 to the frequency indicator 4226, and the frequency W is input from the frequency indicator 4226 to the inverter 384. The frequency of the cooling gas exhaust device 356 may be changed.

  By the above control, even if the equipment exhaust pressure connected to the exhaust port 358 varies or changes, the film formed on the wafer 12 due to the change in the flow rate of the cooling medium flowing through the cooling gas passage 352. It is possible to prevent the thickness from becoming uneven.

FIG. 21 is a diagram showing a configuration of a semiconductor manufacturing apparatus 1 according to the fourth embodiment to which the present invention is applied.
In the semiconductor processing apparatus 1 according to the third embodiment to which the present invention is applied, the control unit 2 controls the cooling gas exhaust device 356 based on the pressure value detected by the pressure sensor 31 used as a pressure detector. It was. On the other hand, in the semiconductor manufacturing apparatus 1 according to the fourth embodiment to which the present invention is applied, the control unit 2 operates as the cooling gas exhaust device 356 and the heating device based on the pressure value detected by the pressure sensor 31. The heater 32 used is controlled.

A control program 40 (control device) used in the fourth embodiment to which the present invention is applied includes a process control unit 400 (process control device), a temperature control unit 410 (temperature control device), and a processing gas flow rate control unit 412 (processing). Gas flow control device), drive control unit 414 (drive control device), pressure control unit 416 (pressure control device), process gas exhaust device control unit 418 (process gas exhaust device control device), temperature measurement unit 420 (temperature measurement device) ), A cooling gas flow rate control unit 422 (cooling gas flow rate control device), and a temperature set value storage unit 424 (temperature setting storage device).
FIG. 21 shows a process control unit 400, a temperature control unit 410, a cooling gas flow rate control unit 422, and a temperature set value storage unit 424. The process gas flow rate control unit 412, the drive control unit 414, the pressure control unit 416, and the processing The gas exhaust device control unit 418 and the temperature measurement unit 420 are not shown. The control program is supplied to the control unit 2 via, for example, the recording medium 240 (see FIG. 18), and loaded into the memory 204, as in the semiconductor processing apparatus 1 according to the third embodiment to which the present invention is applied. Executed.

  The temperature control unit 410 includes a pressure set value adjustment unit 4102 (pressure setting adjustment device). The pressure set value adjustment unit 4102 calculates and sets a desired temperature distribution of the wafer 12 using a correlation table between the film thickness and the temperature distribution registered in the temperature set value storage unit 424 in advance.

  The pressure set value adjustment unit 4102 compares the temperature measured by the temperature measuring device 372 with the temperature distribution registered in the temperature set value storage unit 424 to make the temperature distribution of the wafer 12 a set distribution. The pressure set value at the position upstream of the cooling gas exhaust device 356 is calculated. Then, the pressure setting value is instructed to the cooling gas flow rate control unit 422 via the process control unit 400. Here, instead of instructing the cooling gas flow rate control unit 422 from the pressure set value adjustment unit 4102 via the process control unit 400, the pressure set value adjustment unit 4102 directly enters the cooling gas flow rate control unit 422. A pressure set value may be indicated.

Control of the cooling gas exhaust device 356 according to an instruction from the pressure set value adjustment unit 4102 is performed until the temperature distribution reaches a set value. For example, the PID calculation is used in the same manner as in the first embodiment, and the PID constant is set. The setting realizes quick and stable temperature control while suppressing excessive temperature fluctuations.
Further, the temperature control unit 410 including the pressure set value adjustment unit 4102 controls the pressure at the upstream position of the cooling gas exhaust device 356 by instructing the cooling gas exhaust device 356 to set the pressure setting value, and the temperature measuring device 372. The heater 32 is controlled via the temperature control device 370 based on the temperature measured by the pressure control value 430 and the temperature distribution set by the pressure set value adjustment unit 4102.

FIG. 22 illustrates an example of calculation of the pressure set value by the pressure set value adjustment unit 4102.
Prior to the calculation, pressure setting values corresponding to each temperature distribution of the wafer 12 are registered in advance in the temperature setting value storage unit 424, for example, and correlation table data between the pressure setting values and the temperature distribution values is acquired and input. Keep it. The input may be acquired simultaneously when acquiring correlation table data between the film thickness and the temperature distribution.

  In the calculation, the pressure setting value in the cooling gas exhaust device 356 is instructed, and if the temperature distribution value of the wafer 12 is deviated from the registered temperature distribution value at that time, the pressure setting value and the temperature distribution registration. Based on the correlation table data with the value, a correction amount is calculated for the pressure setting value, and the result is instructed to the cooling gas flow rate control unit 422.

  Specifically, as shown in FIG. 22, with respect to the temperature distribution registration value in the relationship of T1 <T2 <T3, the pressure registration value P1 when the temperature distribution registration value is T1, and the temperature distribution registration value is T2. Assuming that the pressure setting value P3 when the pressure registration value P2 at the time and the temperature distribution registration value is T3 are registered, the pressure setting value currently instructed is Ps, and the temperature distribution of the wafer 12 at that time is t0. The correction amount Pc for the value is obtained by the following (Formula 2) when t0 is in the range represented by the following (Formula 1).

T1 <t0 <T2 (Formula 1)

Pc = {(P2-P1) / (T2-T1)} r (t0-T1) (Expression 2)

  Further, when the correction amount Pc is in the range indicated by (Equation 3) shown below, (Equation 4) shown below, and when t0 is in the range shown by (Equation 5) shown below, In the following (formula 6), when t0 is in the range represented by the following (formula 7), it is obtained by the following (formula 8).

t0 <T1 (Formula 3)

Pc = {(P2-P1) / (T2-T1)} r (T1-t0) (Formula 4)

T3 <t0 (Formula 5)

Pc = {(P3-P2) / (T3-T2)} r (t0-T3) (Expression 6)

T2 <t0 <T3 (Expression 7)

Pc = {(P3-P2) / (T3-T2)} r (t0-T2) (Equation 8)

  As described above, in the semiconductor processing apparatus 1 according to the fourth embodiment to which the present invention is applied, not only the cooling gas exhaust device 356 but also the heater 32 is controlled based on the pressure value detected by the pressure sensor 31. ing. The same parts as those of the semiconductor processing apparatus 1 according to the third embodiment to which the present invention is applied are denoted by the same reference numerals in FIG.

  In the second embodiment, the third embodiment, and the fourth embodiment to which the present invention described above is applied, the second thermocouple is the same as the first embodiment to which the present invention is applied. Just as 1064 is provided in the circumferential direction of the wafer 1400, only one internal temperature sensor 324 is provided in the circumferential direction of the wafer 12. For this reason, as in the first embodiment to which the present invention is applied, the internal temperature sensor 324 detects the temperature of only a part of the wafer 12 in the circumferential direction. There was a problem that the temperature difference could not be improved. Therefore, in the third to fifth embodiments of the present invention, the present invention is applied to the second mode, the third mode, and the fourth mode.

  That is, in the third embodiment of the present invention, in the second embodiment to which the present invention is applied, the internal temperature is the same as that of the second thermocouple 1064 of the first embodiment of the present invention. A plurality of sensors 324 such as four are provided in the circumferential direction of the wafer 12, and an average value of the outputs of temperature detection points at the same height in the plurality of internal temperature sensors 324 is calculated. The value is used for control.

  In the fourth embodiment of the present invention, in the third embodiment to which the present invention is applied, the internal temperature is the same as that of the second thermocouple 1064 of the first embodiment of the present invention. A plurality of sensors 324 such as four are provided in the circumferential direction of the wafer 12, and an average value of the outputs of temperature detection points at the same height in the plurality of internal temperature sensors 324 is calculated. The value is used for control.

  Further, in the fifth embodiment of the present invention, in the fourth embodiment to which the present invention is applied, the internal temperature is the same as that of the second thermocouple 1064 of the first embodiment of the present invention. A plurality of sensors 324 such as four are provided in the circumferential direction of the wafer 12, and an average value of the outputs of temperature detection points at the same height in the plurality of internal temperature sensors 324 is calculated. The value is used for control.

  Furthermore, in the third to fifth embodiments of the present invention, when a defect occurs in one of the plurality of internal temperature sensors 324, the average value of the plurality of internal temperature sensors 324 is calculated from the remaining normal internal temperature sensors 324. Control is performed using the average value of the output, and good control may not be performed. Therefore, in the third to fifth embodiments of the present invention, as in the second embodiment described above, the average value of the outputs of the plurality of internal temperature sensors 324, the average value, and the internal temperature sensor 324 The deviation (correction value) from the output is acquired in advance. Then, in the internal temperature sensor 324 in which the defect has been acquired in advance, the internal temperature sensor 324 in which the defect has occurred is predicted from the correction value with the set temperature, and the temperature that will be detected if there is no defect is predicted. The control is performed by using the predicted value.

Furthermore, in the sixth embodiment of the present invention, as in the second embodiment described above, the average value of the outputs of the plurality of internal temperature sensors 324-1 to 324-4 and the output of each internal temperature sensor 324-1 to 324-4. The deviation (correction value) is acquired. If a failure occurs in one of the plurality of internal temperature sensors 324, the internal temperature sensor 324 that has failed from the current set value and the correction value acquired in advance can detect if there is no failure. By predicting the expected temperature and using the predicted temperature to calculate and control the average value of the internal temperature sensor 324 in which no defect has occurred, the internal temperature sensor 324 is not defective. It can be expected to ensure reproducibility. Here, the current set value is a set value that changes momentarily according to the set ramp rate as shown in FIG. Since the current set value changes according to the ramp rate, this method can be expected to be effective in the temperature transition period.

The sixth embodiment will be described using a specific example. For example, as a plurality of internal temperature sensors 324, it is assumed that there are four internal temperature sensors, 324-1, 324-2, 324-3, 324-4, and each internal temperature sensor when the furnace set temperature is 600 ° C. The output value is as follows. Set temperature: 600 ° C., output value of internal temperature sensor 324-1 is 601 ° C., output value of internal temperature sensor 324-2 is 598 ° C., output value of internal temperature sensor 324-3 is 599 ° C., internal temperature sensor The output value of 324-4 was 602 ° C. At this time, correction values of the internal temperature sensors 324-1 to 324-4 are as follows. Correction value of internal temperature sensor 324-1 = Output value of internal temperature sensor 324-1−Average value = 601 ° C.−600 ° C. = + 1.0 ° C. Here, the average value is an average value of the internal temperature sensors 324-1 to 324-4, but since the temperature is controlled so that this average value becomes the set value, the average value is 600 ° C., which is the same as the set value. Become. Similarly, the correction value of the internal temperature sensor 324-2 =
Output value of internal temperature sensor 324-2−average value = 598 ° C.
−600 ° C. = − 2.0 ° C. Correction value of internal temperature sensor 324-3 = Output value of internal temperature sensor 324-3−Average value = 599 ° C.−600 ° C. = − 1.0 ° C. The correction value of the internal temperature sensor 324-4 = the output value of the internal temperature sensor 324-4−the average value = 602−600 = + 2.0 ° C.

Here, if an abnormality occurs in the internal temperature sensor 324-1, a temperature transition period (before temperature stabilization), where the set value starts from 400 ° C. to 600 ° C. at a rate of temperature increase of 10 ° C./min. The expected value of the internal temperature sensor 324-1 after Xmin is as follows. Since the temperature is being increased from 400 ° C. to 600 ° C. at a rate of temperature increase of 10 ° C./min, the current set value after Xmin is the current set value = 400 ° C. + Xmin × 10 ° C./min where (0 <= X < = 20).

The expected value of the internal temperature sensor 324-1 is obtained by the following equation. Expected value of internal temperature sensor 324-1 = current set value + correction value of internal temperature sensor 324-1 = 400 ° C. + Xmin × 10 ° C./min+1.0° C.
However, (0 <= X <= 20). The expected value of the internal temperature sensor 324-1 changes every moment like the present set value according to the temperature rising rate as shown in FIG. For example, the average value of the internal temperature sensor for 5 minutes after the start of temperature increase is as follows: the output value of the internal temperature sensor 324-2 = 448.5 ° C., the output value of the internal temperature sensor 324-3 = 449.5 ° C., and the internal temperature sensor 324−. 4 output value = 452.0 ° C., predicted value of internal temperature sensor 324-1 = current set value + correction value of internal temperature sensor 324-1 = 400 ° C. + 5 min × 10 ° C./min+1.0° C. = 451 Internal temperature sensor average value (after 5 minutes of temperature increase start) = (expected value of internal temperature sensor 324-1 + output value of internal temperature sensor 324-2 + output value of internal temperature sensor 324-3 + The output value of internal temperature sensor 324-4) / 4 = (451.0 ° C. + 448.5 ° C. + 449.5 ° C. + 452.0 ° C.) / 4 = 450.25 ° C.

Here, when the internal temperature sensor 324-1 is normal, it is assumed that a value close to the internal temperature sensor 324-4 is output from the relationship between the internal sensor correction values, and it is assumed that the internal temperature sensor 324-1 = 324-4. The average value of the internal temperature sensor 324 is internal temperature sensor average value = (452.0 ° C. + 448.5 ° C. + 449.5 ° C. + 452.0 ° C.) / 4 = 450.5 ° C.

On the other hand, according to the third to fifth embodiments of the present invention, the predicted value of the internal temperature sensor 324-1 is represented by the following equation. Expected value of internal temperature sensor 324-1 = set value + correction value of internal temperature sensor 324-1 = 600 ° C. + 1.0 ° C. = 601.0 ° C. In this case, the average value of internal temperature sensor 324 is the internal value Average value of temperature sensor 324 = (expected value of internal temperature sensor 324-1 + internal temperature sensor 324-2 + internal temperature sensor 324-3 + internal temperature sensor 324-4) / 4 = (601.0 ° C. + 448.5 ° C. + 449) 0.5 ° C. + 452.0 ° C.) / 4 = 487.75 ° C.

Here, the average value of the internal temperature sensor 324 according to the third to fifth embodiments of the present invention is the same value as the temperature stable period even though the predicted value of the internal temperature sensor 324-1 is in the temperature transition period. Therefore, in the temperature transition period, as shown in FIG. 26, it is calculated higher than when the internal temperature sensor 324-1 is normal.
The average value of the internal temperature sensor 324 using the predicted value of the internal temperature sensor 324-1 according to the sixth embodiment of the present invention is not significantly different from the normal value of the internal temperature sensor 324-1 and ensures reproducibility. is made of. From this, the problem in the temperature transition period can be solved by the sixth embodiment of the present invention.

In the seventh embodiment of the present invention, the difference (correction value) between the average values of one temperature sensor 324 and the other temperature sensors 324 in the outputs of a plurality of internal temperature sensors 324 as shown in FIG. Get it. If a defect occurs in one of the plurality of internal temperature sensors 324, it is detected if there is no defect in the internal temperature sensor in which the defect has occurred from the average value of the temperature sensor 324 in which no defect has occurred and the correction value acquired in advance. In order to predict the internal temperature sensor 324 by calculating the average value with the internal temperature sensor 324 in which no defect has occurred and performing control using the predicted temperature, In addition, it can be expected to be effective for temperature changes due to changes in conditions such as pressure and gas flow rate.

For example, if the internal temperature sensor 324 has 324-1, 324-2, 324-3, 324-4 and a plurality of internal temperature sensors, the output value of each internal temperature sensor when the furnace set temperature is 600 ° C. It is as follows.

Set temperature: 600 ° C., output value of internal temperature sensor 324-1: 601 ° C., output value of internal temperature sensor 324-2: 598 ° C., output value of internal temperature sensor 324-3: 599 ° C., internal temperature sensor 324- Output value of 4: 602 ° C. At this time, the correction value of each internal temperature sensor is as follows.

Correction value of internal temperature sensor 324-1 = output value of internal temperature sensor 324-1− (internal temperature sensor 324-2 output value + output value of internal temperature sensor 324-3 + output value of internal temperature sensor 324-4) / 3 = 601 ° C.−599.7 ° C. = + 1.3 ° C.

Similarly, the correction value of the internal temperature sensor 324-2 = the output value of the internal temperature sensor 324-2− (the output value of the internal temperature sensor 324-1 + the output value of the internal temperature sensor 324-3 + the output value of the internal temperature sensor 324-4. Output value) / 3 = 598 ° C.-600.7 ° C. = − 2.7 ° C.

Similarly, correction value of internal temperature sensor 324-3 = output value of internal temperature sensor 324-3− (output value of internal temperature sensor 324-1 + output value of internal temperature sensor 324-2 + internal temperature sensor 324-4 Output value) / 3 = 599 ° C.−600.3 ° C. = − 1.3 ° C.

Similarly, correction value of internal temperature sensor 324-4 = output value of internal temperature sensor 324-4− (output value of internal temperature sensor 324-1 + output value of internal temperature sensor 324-2 + internal temperature sensor 324-3 Output value) / 3 = 602 ° C.−599.3 ° C. = + 2.7 ° C.

If an abnormality occurs in the internal temperature sensor 324-1, the predicted value of the internal temperature sensor 324-1 is obtained by the following equation. Expected value of internal temperature sensor 324-1 = (output value of internal temperature sensor 324-2 + output value of internal temperature sensor 324-3 + output value of internal sensor 324-4) / 3 + correction of internal temperature sensor 324-1 value

Here, for example, the internal temperature sensor output value for 5 min after the start of temperature rise is the internal temperature sensor 324-1: abnormality occurred, internal temperature sensor 324-2 output value = 448.5 ° C., internal temperature sensor 324-2 output value = 459.5 ° C. and internal temperature sensor 324-4 output value = 452.0 ° C., the internal temperature sensor 324-1 predicted value is the internal temperature sensor 324-1 predicted value = (448.5 ° C. + 449.5 ° C. + 452.0 ° C.) / 3 + 1.3 ° C. = 451.3 ° C., and the internal temperature sensor average value using the internal temperature sensor 324-1 predicted value is the internal temperature sensor 324 average value = (internal temperature sensor 324-1). Expected value + internal temperature sensor 324-2 + internal temperature sensor 324-3 + internal temperature sensor 324-4) / 4 = (451.3 ° C. + 448.5 ° C. + 449.5 ° C. + 452.0 ° C.) / 4 = 45 .32 degrees and can be calculated.

On the other hand, according to the third to fifth embodiments of the present invention, the predicted value of the internal temperature sensor 324-1 is represented by the following equation. Internal temperature sensor 324-1 expected value = set value + internal temperature sensor 324-1 correction value = 600 ° C. + 1.0 ° C. = 601.0 ° C. In this case, the average value of the internal temperature sensor 324 is the internal temperature sensor 324 average value = (internal temperature sensor 324-1 expected value + internal temperature sensor 324-2 + internal temperature sensor 324-3 + internal temperature sensor 324-4) / 4. = (601.0 ° C. + 448.5 ° C. + 449.5 ° C. + 452.0 ° C.) / 4 = 487.75 ° C.

Here, the average value of the internal temperature sensor 324 according to the third to fifth embodiments of the present invention is set to the same value as the temperature stable period even though the predicted value of the internal temperature sensor 324-1 is in the temperature transition period. For this reason, in the temperature transition period, as shown in FIG. 26, it is calculated higher than when the internal temperature sensor 324-1 is normal. The average value of the internal temperature sensor 324 using the predicted value of the internal temperature sensor 324-1 according to the seventh embodiment of the present invention is not significantly different from that when the internal temperature sensor 324-1 is normal, and reproducibility can be secured. Yes. From this, the problem in the temperature transition period can be solved according to the present embodiment.

Also, for example, the internal temperature sensor output value for 5 min after the start of temperature rise when the temperature distribution changes greatly compared to when the correction value of each internal temperature sensor is acquired due to changes in gas flow rate, pressure value, etc. To do. Internal temperature sensor 324-1: Abnormality, internal temperature sensor 324-2 output value = 420.5 ° C, internal temperature sensor 324-3 output value = 439.5 ° C, internal temperature sensor 324-4 output value = 410.0 Assuming ° C., the internal temperature sensor 324-1 predicted value according to the present embodiment is the internal temperature sensor 324-1 predicted value = (internal temperature sensor 324-2 + internal temperature sensor 324-3 + internal temperature sensor 324-4) / 3 + internal temperature. Sensor 324-1 correction value = (420.5 ° C. + 439.5 ° C. + 410.0 ° C.) / 3 + 1.3 ° C. = 424.6 ° C.

In this case, the internal temperature sensor 324 average value is: internal temperature sensor 324 average value = (internal temperature sensor 324-1 expected value + internal temperature sensor 324-2 output value + internal temperature sensor 324-3 output value + internal temperature sensor 324 −4 output value) / 4 = (424.6 ° C. + 420.5 ° C. + 439.5 ° C. + 410.0 ° C.) / 3 = 423.65 ° C.

On the other hand, according to the third to fifth embodiments of the present invention, the predicted value of the internal temperature sensor 324-1 is represented by the following equation. Internal temperature sensor 324-1 expected value = current set value + internal temperature sensor 324-1 correction value = 400 ° C. + 5 min × 10 ° C./min+1.0° C. = 451.0 ° C. In this case, the internal temperature sensor 324 average value is: internal temperature sensor 324 average value = (internal temperature sensor 324-1 expected value + internal temperature sensor 324-2 output value + internal temperature sensor 324-3 output value + internal temperature sensor output) Value 324-4) / 4 = (451.0 ° C. + 420.5 ° C. + 439.5 ° C. + 410.0 ° C.) / 4 = 430.25 ° C.

When the internal temperature sensor 324-1 is normal, it is assumed that a value close to the internal temperature sensor 324-4 is output from the relationship between the internal sensor correction values, and assuming that the internal temperature sensor 324-1 = 324-4, the internal temperature The average value of the sensors 324 is the average value of the internal temperature sensor (assuming normal) = (410.0 ° C. + 420.5 ° C. + 439.5 ° C. + 410.0 ° C.) / 4 = 420.0 ° C.

Here, the average value of the internal temperature sensor 324 according to the sixth embodiment of the present invention is calculated from the situation in which the internal temperature sensor 324-1 expected value has acquired the internal temperature sensor correction value, and the internal temperature situation changes due to disturbance. If this happens, there will be a difference from normal.

According to the seventh embodiment of the present invention, when the correction value is acquired, the current value is similarly calculated, but the current average value of the internal temperature sensor in which no abnormality has occurred is used when the predicted value is calculated. By this, it is possible to solve the problem at the time of the situation change due to disturbance.

In the above, it is preferable that the internal temperature sensor 324 is installed not at the dummy wafer area but at the height of the product wafer area to detect the temperature near the edge of the product wafer. Here, the product wafer is a wafer on which a semiconductor element such as an IC is actually manufactured, and the dummy wafer is arranged at both ends of the boat so as to sandwich the product wafer so that the heat of the product wafer area does not escape, It also prevents fine particles and contaminants flying from the top and bottom of the reactor from adhering to the product wafer.

In addition, for example, it is preferable that the seventh embodiment is used during the temperature transition period and the third to fifth embodiments are used during the temperature stable period. The switching timing between the seventh embodiment and the third to fifth embodiments may be when the temperature rise is completed (400-600 ° C., 20 minutes when the temperature rise rate is 10 ° C./min). The measurement is performed after the temperature deviation between the set value and the average value of the internal temperature sensor is within a predetermined temperature range by looking at the average value of the sensor.

Thus, by performing the correction method of the seventh embodiment in the temperature transition period, it becomes possible to cope with the reproducibility of the temperature transition period and disturbance. Further, by performing the correction methods of the third to fifth embodiments when the temperature is stable, it is possible to ensure normal reproducibility without being affected by disturbances when the temperature is stable.

In the seventh embodiment, for example, a reference sensor 324-1 is set as the internal temperature sensor, and the deviation from the average value of the other sensors 324-2, 324-3, 324-4 is set to a predetermined value. By doing so, the temperature deviation in the circumferential direction of the wafer can be controlled within a certain range.

Conventionally, the temperature difference in the circumferential direction of the wafer has been improved by controlling the average value of the temperature sensors 324-1 to 4-4 to a set value. However, by applying the seventh embodiment, the reference temperature sensor 324- Control 1 to the set value. If the temperature difference from the average value of the other temperature sensors 324-2 to 4 is not within a predetermined range while monitoring, the exhaust pressure can be adjusted, and the temperature difference in the circumferential direction of the wafer is controlled within a certain range. Can do.

  As described above, the present invention can be applied to a semiconductor manufacturing apparatus and a substrate processing method.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor processing apparatus 12 ... Wafer 14 ... Boat 100 ... Cassette transfer unit 102 ... Cassette stocker 104 ... Buffer cassette stocker 106 ... Wafer mover 108 ... Boat elevator 490 ... Wafer cassette 2 ... Control unit (control device)
22 ... Display / input unit (display / input device)
200 ... CPU wafer 24 ... recording unit (recording apparatus)
240... Recording medium 40... Control program 400... Process control unit (process control device)
410 ... temperature control unit (temperature control device)
4102 ... Pressure set value adjustment unit (pressure set value adjustment device)
412 ... Process gas flow rate control unit (process gas flow rate control device)
414 ... Drive control unit (drive control device)
416 ... Pressure control unit (pressure control device)
418 ... Process gas exhaust device controller (Process gas exhaust device controller)
420 ... temperature measuring unit (temperature measuring device)
422 ... Cooling gas flow rate control unit (cooling gas flow rate control device)
4220 ... Subtractor 4222 ... PID calculator 4224 ... Frequency converter 4226 ... Frequency indicator 424 ... Temperature set value storage unit (temperature set value storage device)
3 ... processing chamber 300 ... heat insulating material (140 ... heat insulating plate)
31 ... Pressure sensor 32 ... Heater 320 ... Temperature adjustment part 322, 324 ... Temperature sensor 340 ... Gas introduction nozzle 344 ... Furnace cover 346 ... Exhaust pipe 348 ... Rotation Shaft 350 ... Manifold 351 ... O-ring 352 ... Cooling gas passage 353 ... Intake port 354 ... Exhaust passage 355 ... Exhaust section 356 ... Cooling gas exhaust device 357 ... Radiator 358 ... Exhaust hole 359 ... Shutter 360 ... Outer tube 362 ... Inner tube 370 ... Temperature controller 372 ... Temperature measuring device 374 ... MFC
376 ... EC
378 ... PS
380 ... APC
382 ... EP
384 ... Inverter 1010 ... Semiconductor manufacturing apparatus 1012 ... Soaking tube 1014 ... Reaction tube 1016 ... Supply tube 1018 ... Exhaust tube 1020 ... Introducing member 1022 ... Exhaust port 1024 ..MFC
1030 ... APC
1032 ... Pressure sensor 1034 ... Base 1036 ... Ring 1038 ... Seal cap 1040 ... Rotating shaft 1042 ... Quartz cap 1044 ... Boat 1050 ... Boat elevator 1052 ... Heater 1060 ... Temperature detector (temperature detector)
1062 ... First thermocouple 1064 ... Second thermocouple 1064a ... Internal main thermocouple 1064b ... Internal sub thermocouple 1064c ... Internal side thermocouple 1064d ... Internal side thermocouple 1066 ... Third thermocouple 1068 ... Center thermocouple 1070 ... Ceiling thermocouple 1072 ... Lower thermocouple 1078 ... Inverter 1080 ... Exhaust part 1082 ... Exhaust pipe 1084 ... Cooling gas exhaust device 1086 ... Radiator 1090 ... Shutter 1092 ... Pressure sensor 1200 ... Control unit (control device)
1202 ... Gas flow control unit (gas flow control device)
1204 ... Temperature control unit (temperature control device)
1206: Pressure control unit (pressure control device)
1208: Drive control unit (drive control device)
1220 ... Cooling gas flow rate control unit (cooling gas flow rate control device)
1222 ... Subtractor 1224 ... PID calculator 1226 ... Frequency converter 1228 ... Frequency indicator 1230 ... Average temperature calculator 1242 ... PID calculator 1240 ... Wafer center temperature Correction calculation unit (wafer center temperature correction calculation device)
1250... Arithmetic storage unit 1300... Upper controller 1400... Wafer

Claims (5)

A processing chamber for processing the substrate;
A heating device for heating the processing chamber;
A cooling device for flowing a cooling gas into a cooling gas channel provided between the processing chamber and the heating device;
A pressure detector for measuring a pressure value in the cooling gas flow path;
A plurality of temperature detectors for detecting the temperature of the substrate;
A first value calculated from a first measurement value of one temperature detection unit among a plurality of temperature detection units for detecting the temperature in the processing chamber and a second measurement value detected by a plurality of other temperature detection units. The third measurement detected by the temperature detection unit excluding the temperature detection unit in which the abnormality has occurred when an abnormality has occurred in the temperature detection unit that has calculated the deviation from the average value and detected the first measurement value Based on the second average value calculated from the value and the calculated deviation, the temperature detection predicted value of the temperature detection unit where the abnormality has occurred is calculated, and based on the second average value and the temperature detection predicted value A controller that processes at least one of the heating device and the cooling device to process the substrate;
A semiconductor manufacturing apparatus comprising: The control unit calculates a third average value from an average value of the temperature detection unit excluding the temperature detection unit in which the abnormality has occurred and the predicted value, and based on the third average value, the heating device and the The semiconductor manufacturing apparatus according to claim 1, wherein the substrate is processed by controlling at least one of the cooling devices. The semiconductor manufacturing apparatus according to claim 1, wherein the deviation is calculated for each of the plurality of temperature detection units. The plurality of temperature detection units each include the same number of temperature detection points for detecting the temperature of the substrate,
The semiconductor manufacturing apparatus according to claim 1, wherein the temperature detection point is provided at the same height with respect to the direction of gravity. Excluding a first measurement value of one temperature detection unit among a plurality of temperature detection units for detecting the temperature of the substrate and a temperature detection unit detecting the first measurement value among the plurality of temperature detection units. Obtaining in advance a first average value calculated from the second measurement value of each temperature detection unit, and calculating a deviation between the first measurement value and the first average value;
The second average value calculated from the third measurement value detected by the temperature detection unit excluding the temperature detection unit in which the abnormality has occurred when an abnormality has occurred in the temperature detection unit that has detected the first measurement value And calculating a temperature detection expected value of the temperature detection unit where the abnormality has occurred from the calculated deviation,
Processing the substrate by controlling at least one of the heating device and the cooling device based on the second average value and the temperature detection expected value;
A substrate processing method.