KR102192092B1 - Cooling unit, heat insulating structure, substrate processing apparatus, and method of manufacturing semiconductor device - Google Patents

Abstract

The present invention provides a configuration for improving the responsiveness of heating and cooling control between zones. An intake pipe installed for each zone to supply a gas to cool the reaction tube, a control valve installed in the intake pipe to adjust the flow rate of the gas, a buffer unit temporarily storing the gas supplied from the intake pipe; The opening is provided to eject the gas stored in the buffer unit toward the reaction tube. By setting the flow rate of the gas introduced into the intake pipe according to the vertical length ratio of the zone, the control valve is opened and closed. A configuration is provided in which the flow rate and the flow rate of the gas ejected from the reaction tube are adjusted.

Description

Cooling unit, heat insulation structure, substrate processing device, and manufacturing method of semiconductor device {COOLING UNIT, HEAT INSULATING STRUCTURE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE}

The present invention relates to a cooling unit, a heat insulating structure, a substrate processing device, and a method of manufacturing a semiconductor device.

As an example of a substrate processing apparatus, there is a semiconductor manufacturing apparatus, and as an example of a semiconductor manufacturing apparatus, a vertical apparatus is known. In a vertical device, a boat as a substrate holding unit that holds a plurality of substrates (hereinafter, also referred to as wafers) in multiple stages is carried into a processing chamber in a reaction tube while holding the substrates, and the temperature in a plurality of zones While controlling, processing of the substrate at a predetermined temperature is performed. Until now, in the conventional temperature control of a heater, the heater is turned off during temperature fall, but in recent years, a cooling gas is supplied from a cooling mechanism to actively improve the temperature fall characteristic after substrate treatment.

Patent Document 1 discloses a technique of changing the flow of a cooling gas at the time of film formation, at the time of temperature fall, and at the time of temperature recovery, respectively, by opening and closing the on/off valve. In addition, Patent Document 2 describes a technique of setting the temperature-fall rate of each part of the heater by changing the number and arrangement of the ejection holes. However, with the control of the cooling gas flow rate in the above-described cooling unit configuration, since the reaction tube cannot be uniformly cooled during rapid cooling, the change in the temperature decrease rate for each zone is different, resulting in a difference in the temperature history between the zones. There was a problem.

Japanese Patent Publication No. 2014-209569 International Publication No. 2008/099449

An object of the present invention is to provide a configuration for improving the responsiveness of heating control between zones and cooling control.

According to one embodiment of the present invention, an intake pipe provided for each zone to supply a gas for cooling a reaction tube, a control valve provided in the intake pipe to adjust the flow rate of the gas, and a gas supplied from the intake pipe The flow rate of the gas introduced into the intake pipe is set according to the vertical length ratio of the zone by a configuration having a buffer unit that temporarily stores and an opening installed to eject the gas stored in the buffer unit toward the reaction tube. By doing so, there is provided a configuration in which the flow rate and the flow rate of the gas ejected from the opening toward the reaction tube are adjusted by opening and closing the control valve.

According to the configuration according to the present invention, it is possible to improve the responsiveness of heating and cooling control between zones.

1 is a partially cut-away front view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a front cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
3 is a diagram showing a flowchart showing an example of a temperature-related process during a film forming process according to an embodiment of the present invention.
FIG. 4 is a diagram showing a temperature change in a furnace in the flowchart shown in FIG. 3.
5 is a diagram showing a main configuration part of a substrate processing apparatus according to an embodiment of the present invention.
6 is an enlarged view of a part of the main component shown in FIG. 5.
7 is an exploded view of a heat insulating structure in the substrate processing apparatus according to the embodiment of the present invention.
8 is a diagram showing a flow rate of a cooling unit in the substrate processing apparatus according to the embodiment of the present invention.
9 is a diagram showing a flow rate between zones of a cooling unit in the substrate processing apparatus according to the embodiment of the present invention.
Fig. 10 is a diagram showing a division of a cooling zone and a range of influence of heating in the substrate processing apparatus according to the embodiment of the present invention.
11 is a diagram showing a distribution of a crack length in a substrate processing apparatus according to an embodiment of the present invention.
12 is a diagram showing a hardware configuration of a control computer in the substrate processing apparatus according to the embodiment of the present invention.

Hereinafter, an embodiment of the present invention will be described based on the drawings.

In this embodiment, as shown in Figs. 1 and 2, the substrate processing apparatus 10 according to the present invention is configured as a processing apparatus 10 that performs a film forming step in a method for manufacturing a semiconductor device. .

The substrate processing apparatus 10 shown in FIG. 1 includes a process tube 11 as a supported vertical reaction tube, and the process tube 11 includes an outer tube 12 and an inner tube ( 13). The outer tube 12 is made of quartz (SiO ₂ ), and is integrally molded in a cylindrical shape with an upper end closed and an open lower end. The inner tube 13 is formed in a cylindrical shape with both upper and lower ends open. The hollow portion of the inner tube 13 forms a processing chamber 14 into which a later-described boat is carried, and the lower end opening of the inner tube 13 constitutes a furnace opening 15 for loading and unloading the boat. As described later, the boat 31 is configured to hold a plurality of wafers in a long aligned state. Accordingly, the inner diameter of the inner tube 13 is set to be larger than the maximum outer diameter (for example, a diameter of 300 mm) of the wafer 1 to be handled.

The lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by a manifold 16 constructed in a substantially cylindrical shape. In order to replace the outer tube 12 and the inner tube 13, the manifold 16 is provided to the outer tube 12 and the inner tube 13 so as to be detachable. The manifold 16 is supported by the housing 2 of the CVD apparatus, so that the process tube 11 is installed vertically. Hereinafter, only the outer tube 12 may be shown as the process tube 11 in FIG.

Due to the gap between the outer tube 12 and the inner tube 13, the exhaust passage 17 is formed in a circular ring shape having a constant width in cross-sectional shape. As shown in FIG. 1, one end of an exhaust pipe 18 is connected to an upper portion of the side wall of the manifold 16, and the exhaust pipe 18 is in a state in which it communicates with the lowermost end of the exhaust passage 17. An exhaust device 19 controlled by the pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected in the middle of the exhaust pipe 18. The pressure controller 21 is configured to control the exhaust device 19 in feedback based on the measurement result from the pressure sensor 20.

Below the manifold 16, a gas introduction pipe 22 is arranged to communicate with the furnace opening 15 of the inner tube 13, and a gas supply device for supplying a source gas or an inert gas to the gas introduction pipe 22 (23) is connected. The gas supply device 23 is configured to be controlled by a gas flow controller 24. The gas introduced into the furnace opening 15 from the gas introduction pipe 22 passes through the processing chamber 14 of the inner tube 13 and is exhausted by the exhaust pipe 18 through the exhaust path 17.

The manifold 16 has a seal cap 25 that closes the lower end opening in contact with the lower side in the vertical direction. The seal cap 25 is constructed in a disk shape substantially equal to the outer diameter of the manifold 16, and is configured to be raised and lowered in a vertical direction by a boat elevator 26 installed in the waiting room 3 of the housing 2 . The boat elevator 26 is configured by a motor-driven feed screw shaft device and bellows, and the motor 27 of the boat elevator 26 is configured to be controlled by a drive controller 28. A rotation shaft 30 is disposed on the center line of the seal cap 25 and is rotatably supported, and the rotation shaft 30 is configured to be rotationally driven by a rotation mechanism 29 as a motor controlled by the drive controller 28. have. A boat 31 is vertically supported at the upper end of the rotation shaft 30.

The boat 31 includes a pair of upper and lower end plates 32 and 33, and three holding members 34 erected vertically between them, and the three holding members 34 hold a plurality of Support grooves 35 are etched at equal intervals in the longitudinal direction. In the three holding members 34, the holding grooves 35, 35, 35 engraved on the same end are opened to face each other. In the boat 31, the wafer 1 is inserted between the holding grooves 35 at the same end of the three holding members 34, so that the plurality of wafers 1 are horizontally and centered on each other. It is intended to be aligned and held. A heat insulating cap portion 36 is disposed between the boat 31 and the rotation shaft 30. The rotation shaft 30 is configured to support the boat 31 in a state lifted from the upper surface of the seal cap 25 so that the lower end of the boat 31 is separated by a suitable distance from the position of the furnace mouth 15. The thermal insulation cap portion 36 is designed to insulate the vicinity of the furnace opening 15.

On the outside of the process tube 11, a heater unit 40 as a heating device is arranged concentrically, and is provided in a state supported by the housing 2. The heating device 40 is provided with a case 41. The case 41 is made of stainless steel (SUS) and is closed at the top and is formed in a cylindrical shape, preferably in a cylindrical shape, of the lower opening. The inner diameter and the total length of the case 41 are set larger than the outer diameter and the total length of the outer tube 12. In addition, in this embodiment, the upper end side of the heating device 40 spans the lower side, and as a plurality of heating zones (heat control zones), seven control zones U1, U2, CU, C, CL, L1, L2 ).

In the case 41, a heat insulating structure 42 which is an embodiment of the present invention is provided. The heat insulating structure 42 according to the present embodiment is formed in a cylindrical shape, preferably in a cylindrical shape, and the side wall portions 43 of the cylindrical body are formed in a multilayer structure. That is, the heat insulating structure 42 includes a sidewall outer layer 45 disposed on the outside of the sidewall portions 43, and a sidewall inner layer 44 disposed on the inside of the sidewall portions, and the sidewall outer layer 45 and the sidewall inner layer ( 44), a partition portion 105 that isolates the side wall portion 43 into a plurality of zones (areas) in the vertical direction, and the partition portion 105 is provided between the adjacent partition portion 105 An annular buffer 106 is provided as a buffer unit to be used.

Further, the buffer unit 106 is configured to be divided into a plurality of divisions 106a as slits according to its length. That is, a partition 106a for dividing the buffer 106 into a plurality according to the length of the zone is provided. In this specification, the partition portion 105 is also referred to as a first partition portion 105 and the partition portion 106a is also referred to as a second partition portion 106a. In addition, it may be referred to as an isolation portion separating the partition portion 105 into a plurality of cooling zones. The above-described control zones (CU, C, CL, L1, L2) and the buffer unit 106 are provided to face each other, so that the height of each control zone and the height of the buffer unit 106 are substantially the same. On the other hand, the heights of the control zones U1 and U2 thereon and the heights of the buffer unit 106 facing these control zones are configured to be different. Specifically, since the height of the buffer unit 106 facing the control zones U1 and U2 is configured to be lower than that of each zone, cooling air 90 can be efficiently supplied to each control zone. Thereby, the cooling air 90 supplied to the control zones U1 and U2 and the cooling air 90 supplied to the other control zones can be made equal, and the control zone CU, Temperature control equivalent to C, CL, L1, L2) can be performed.

In particular, since the height of the buffer unit 106 facing the control zone U1 for heating the inner space 75 on the side of the exhaust duct 82 is configured to be lower than half the height of each zone, the control zone ( The cooling air 90 can be efficiently supplied to U1). Thereby, even in the control zone U1 closest to the exhaust side, temperature control equivalent to that of other control zones can be performed.

In addition, the partition 105 disposed at the top is a position higher than the substrate processing area of the boat 31 and lower than the height of the process tube 11 (a position approximately equal to the height of the inner tube 13), Secondly, since the partition portion 105 disposed on the upper portion is at approximately the same height as the wafer 1 loaded on the upper end of the boat 31, the exhaust side of the process tube 11 (wafer 1) is The cooling air 90 can be efficiently brought into contact with the portion not loaded), and cooling can be performed in the same manner as the process tube 11 corresponding to the substrate processing area of the boat 31. As a result, the entire process tube 11 can be cooled evenly.

In addition, a check damper 104 as a reverse diffusion prevention part is provided in each zone. Then, the cooling air 90 is supplied to the buffer unit 106 through the gas introduction path 107 by opening and closing the reverse diffusion preventing member 104a. In addition, the cooling air 90 supplied to the buffer unit 106 flows through the gas supply flow path 108 provided in the sidewall inner layer 44 not shown in FIG. 2, and is supplied including the gas supply flow path 108. It is configured to supply the cooling air 90 to the inner space 75 from the opening hole 110 serving as an opening part of the path.

Further, when the cooling air 90 is not supplied from a gas source (not shown), the reverse diffusion preventing member 104a serves as a cover, so that the atmosphere of the internal space 75 does not flow backward. The pressure at which the reverse diffusion preventing member 104a is opened may be changed according to the zone. In addition, a heat insulating cloth 111 as a blanket is provided between the outer peripheral surface of the side wall outer layer 45 and the inner peripheral surface of the case 41 so as to absorb the thermal expansion of metal.

Then, the cooling air 90 supplied to the buffer unit 106 flows through the gas supply flow passage 108 provided in the side wall inner layer 44 not shown in FIG. 2, and the cooling air 90 from the opening hole 110 It is configured to supply to the inner space (75).

As shown in FIGS. 1 and 2, a ceiling wall portion 80 as a ceiling portion is covered so as to close the inner space 75 on the upper end of the side wall portion 43 of the heat insulating structure 42. In the ceiling wall portion 80, an exhaust port 81 as a part of an exhaust path for exhausting the atmosphere of the inner space 75 is formed in an annular shape, and the lower end, which is an upstream end of the exhaust port 81, communicates with the inner space 75. Are doing. The downstream end of the exhaust port 81 is connected to the exhaust duct 82.

Next, the operation of the substrate processing apparatus 10 will be described.

As shown in Fig. 1, when a predetermined number of wafers 1 is loaded in the boat 31, the boat 31 holding the wafer 1 group has a seal cap 25 and a boat elevator 26 ), it is carried in (boat loading) into the processing chamber 14 of the inner tube 13. The seal cap 25 that has reached its upper limit is in a state where the inside of the process tube 11 is sealed by pressure contact with the manifold 16. The boat 31 remains in the processing chamber 14 as it is supported by the seal cap 25.

Subsequently, the inside of the process tube 11 is exhausted by the exhaust pipe 18. Further, the inside of the process tube 11 is heated to the target temperature by the side wall heating element 56 by sequence control by the temperature controller 64. The error between the actual rising temperature inside the process tube 11 and the target temperature of the sequence control of the temperature controller 64 is corrected by feedback control based on the measurement result of the thermocouple 65. Also, the boat 31 is rotated by the motor 29.

When the internal pressure and temperature of the process tube 11 and the rotation of the boat 31 are in a constant and stable state as a whole, the source gas is supplied to the processing chamber 14 of the process tube 11 by the gas supply device 23. 22). The raw material gas introduced by the gas introduction pipe 22 passes through the processing chamber 14 of the inner tube 13 and is exhausted by the exhaust pipe 18 through the exhaust path 17. When flowing through the processing chamber 14, a predetermined film is formed on the wafer 1 by a thermal CVD reaction caused by contact of the raw material gas with the wafer 1 heated to a predetermined processing temperature.

When a predetermined processing time elapses, after the introduction of the processing gas is stopped, a purge gas such as nitrogen gas is introduced into the process tube 11 from the gas introduction pipe 22. At the same time, cooling air 90 as a cooling gas is supplied from the intake pipe 101 to the gas introduction path 107 through the reverse diffusion preventing member 104a. The supplied cooling air 90 is temporarily stored in the buffer unit 106 and is ejected from the plurality of opening holes 110 into the inner space 75 through the gas supply passage 108. The cooling air 90 ejected from the opening hole 110 into the inner space 75 is exhausted by the exhaust port 81 and the exhaust duct 82.

Since the entire heater unit 40 is forcibly cooled by the flow of the cooling air 90, the heat insulating structure 42 is rapidly cooled together with the process tube 11. Further, since the inner space 75 is isolated from the processing chamber 14, the cooling air 90 can be used as the cooling gas. However, in order to further enhance the cooling effect or to prevent corrosion of the sidewall heating element 56 under high temperature due to impurities in the air, an inert gas such as nitrogen gas may be used as the cooling gas.

When the temperature of the processing chamber 14 decreases to a predetermined temperature, the boat 31 supported by the seal cap 25 is lowered by the boat elevator 26 to be carried out from the processing chamber 14 (boat unloading).

Thereafter, the above operation is repeated, whereby a film forming process is performed on the wafer 1 by the substrate processing apparatus 10.

As shown in Fig. 12, the control computer 200 as a control unit includes a computer main body 203 including a CPU (Central Precessing Unit) 201, a memory 202, etc., and a communication IF (Interface) as a communication unit. 204, a storage device 205 as a storage unit, and a display/input device 206 as an operation unit. That is, the control computer 200 includes a component part as a general computer.

The CPU 201 constitutes the backbone of the operation unit, executes the control program stored in the storage unit 205, and according to the instruction from the operation unit 206, the recipe recorded in the storage unit 205 (for example, For example, process recipe). In addition, it goes without saying that the process recipe includes temperature control from Step S1 to Step S6 described later shown in FIG. 3.

Further, as the recording medium 207 for storing an operation program of the CPU 201 or the like, a ROM (Read Only Memory), an Electrically Erasable Programmable Read Only Memory (EEPROM), a flash memory, a hard disk, or the like is used. Here, RAM (Random Access Memory) functions as a work area or the like of the CPU.

The communication IF 204 is electrically connected to the pressure controller 21, the gas flow controller 24, the drive controller 28, and the temperature controller 64 (collectively referred to as a sub-controller) to operate each component. You can send and receive data about. Further, it is also electrically connected to the valve control unit 300 to be described later, so that data for controlling the multi-cooling unit can be exchanged.

In the embodiment of the present invention, the control computer 200 has been described as an example, but the present invention is not limited thereto, and can be realized using an ordinary computer system. For example, the above-described processing can also be executed by installing the program in a general-purpose computer from a recording medium 207 such as a CDROM or USB that stores a program for executing the above-described processing. Further, a communication IF 204 each including a communication line, a communication network, and a communication system may be used. In this case, for example, the program may be posted on a bulletin board of a communication network, and superimposed on a carrier wave through the network. Then, the above-described processing can be executed by starting the program provided in this way and executing it in the same manner as other application programs under the control of the OS (Operating System).

Next, an example of the film forming process performed in the substrate processing apparatus 10 will be described with reference to FIGS. 3 and 4. Reference numerals S1 to S6 shown in FIG. 4 indicate that steps S1 to S6 in FIG. 3 are performed.

Step S1 is a process of stabilizing the temperature in the furnace to a relatively low temperature T0. In step S1, the substrate 1 has not yet been inserted into the furnace.

Step S2 is a process of inserting the substrate 1 held by the boat 31 into the furnace. Since the temperature of the substrate 1 is lower than the temperature T0 in the furnace at this point, as a result of inserting the substrate 1 into the furnace, the temperature in the furnace is temporarily lowered than T0, but the temperature control device 74 described later, etc. As a result, the temperature in the furnace is stabilized to the temperature T0 again after some time. For example, when the temperature T0 is room temperature, this step may be omitted and is not an essential step.

Step S3 is a process of increasing the temperature in the furnace by the heater unit 40 from the temperature T0 to the target temperature T1 for performing the film forming process on the substrate 1.

Step S4 is a process of stabilizing the temperature in the furnace at the target temperature T1 in order to perform the film forming process on the substrate 1.

Step S5 is a process of gradually lowering the temperature in the furnace from the temperature T1 to the relatively low temperature T0 again by the cooling unit 280 and the heater unit 40 to be described later after the film forming process is finished. Further, it is also possible to rapidly cool from the processing temperature T1 to the temperature T0 by the cooling unit 280 while turning off the heater unit 40.

Step S6 is a process in which the substrate 1 on which the film forming process has been performed is taken out of the furnace together with the boat 31.

When the unprocessed substrate 1 to be subjected to the film forming process remains, the processed substrate 1 on the boat 31 is replaced with the unprocessed substrate 1, and a series of steps S1 to S6 are processed. Is repeated.

All of the processes of steps S1 to S6 are made to proceed to the next step after obtaining a stable state in which the furnace temperature is within a predetermined micro temperature range with respect to the target temperature, and the state continues for a predetermined time. Or, in recent years, for the purpose of increasing the number of film forming processes on the substrate 1 at a certain time, in steps S1, S2, S5, S6, etc., a stable state is not obtained and the next step is also performed.

Fig. 5 is an illustration of a cooling unit (cooling device) 100 as a multi-cooling unit in the present embodiment. In addition, the outer tube 12 and the inner tube 13 are omitted, and the process tube 11 is shown as one configuration, and the configuration related to the heating device 40 is omitted.

As shown in FIG. 5, the cooling device 100 includes a heat insulating structure 42 including a plurality of cooling zones in the vertical direction, and cooling as a cooling gas for cooling the inside of the process tube 11 for each cooling zone. An intake pipe 101 that supplies air 90, a control valve 102 as a conductance valve that is installed in the intake pipe 101 to adjust the flow rate of gas, and a heat insulating structure provided in the intake pipe 101 A check damper 104 is provided to prevent reverse diffusion of the atmosphere from the (42) side. Further, the ceiling wall portion 80 including the exhaust port 81 and the exhaust duct 82 for exhausting the atmosphere from the space 75 may be configured as the cooling device 100.

The cooling device 100 includes an intake pipe 101 for supplying cooling air 90 for cooling the process tube 11 for each of a plurality of cooling zones, a control valve 102 provided in the intake pipe 101, and A side wall of the buffer unit 106 which is in communication with the intake pipe 101 provided for each cooling zone and temporarily stores the gas supplied from the intake pipe 101 and the cooling air 90 stored in the buffer unit 106 At least a plurality of opening holes 110 for ejecting gas toward the process tube 11 through the gas supply flow path 108 provided in the inner layer 44 are provided, and each opening hole 110 in each cooling zone It is configured to equally maintain the flow rate and flow rate of the cooling air 90 ejected from.

In addition, the cross-sectional area (or tube diameter) between the cooling zones of the intake pipe 101 is determined according to the ratio of the length of each cooling zone in the height direction. Thereby, it aims at uniformity of the injection air volume between each cooling zone. In addition, the cross-sectional area of the intake pipe 101 is configured to be larger than the sum of the cross-sectional areas of the opening holes 110. Similarly, the cross-sectional area of the flow path of the buffer unit 106 is configured to be larger than the sum of the cross-sectional areas of the opening holes 110. In Fig. 5, since the lengths in the height direction between the cooling zones are substantially the same, the intake pipe 101, the control valve 102, and the check damper 104 of the same size as each of the cooling zones are provided.

In addition, since the opening holes 110 are formed at equal intervals in the circumferential direction and the vertical direction in each cooling zone, the cooling device 100 allows the cooling air 90 stored in the buffer unit 106 to be spaced. It can be evenly ejected to 75 through the gas supply flow path 108. In addition, by adjusting the flow rate of the cooling air 90 introduced into the intake pipe 101 according to the length ratio in the height direction between the respective cooling zones, and opening and closing the control valve 102, the process tube ( The flow rate and flow rate of the gas ejected toward 11) can be the same.

Therefore, the process tube 11 facing each cooling zone from approximately the same height as the uppermost end of the area with the product substrate to be loaded on the boat 31 to the lowermost end of the area with the product substrate is evenly supplied to the cooling air 90 Cooled by That is, the cooling device 100 can evenly cool the inside of the cooling zone and between the cooling zones.

In addition, the check damper 104 is a buffer installed in each cooling zone so that the atmosphere of the space 75 is exhausted from the exhaust port 81 on the upper side, so that the cooling air 90 is efficiently stored in the buffer unit 106. It is configured to communicate with the center of the part 106. Further, the check damper 104 may be configured to communicate with the lower side of the buffer unit 106.

Further, the intake pipe 101 is configured to be provided with a tightening portion 103 as an orifice for suppressing the flow rate of the cooling air 90 ejected from the opening hole 110. However, this tightening part 103 is provided for each cooling zone as needed.

For example, when the length in the height direction of each zone is different and the flow rate of the cooling air 90 introduced into each cooling zone is different, the cooling air 90 introduced into each cooling zone is the same, but a predetermined cooling zone In order to suppress the cooling capacity of, a throttle 103 is provided, and it is configured to be provided when adjusting the flow rate and flow rate of the cooling air 90.

In addition, the valve control unit 300 can adjust the opening degree of the control valve 102 based on the data from the temperature controller 64 or the thermocouple 65 based on the set value from the control unit 200. Consists of. As a result, the cooling capacity of each cooling zone can be adjusted according to the opening degree of the control valve 102, and thus, fluctuations in the exhaust capacity of customer facilities during rapid cooling, or variations in parts alone, and the installation state of the device Equipment differences between devices can be reduced.

The heat insulating structure 42 used in the heating device 40 having a control zone (U1, U2, CU, C, CL, L1, L2 in this embodiment) as a plurality of heating regions is formed in a cylindrical shape. (43), the side wall portion 43 is formed in a multi-layered structure, the side wall portion 43 from the vertical direction to a plurality of cooling zones (U1, U2, CU, C, CL, L1, L2) The buffer unit 106 as an annular buffer composed of a partition 105 to be isolated and a cylindrical space between the sidewall inner layer 44 and the sidewall outer layer 45, and a space between adjacent partitions 105 in the vertical direction. ), a gas introduction path 107 which is provided on the outer sidewall layer 45 disposed outside of the plurality of layers of the sidewall portion 43 for each zone, and communicates with the buffer portion 106, and the sidewall portion 43 for each cooling zone. ), a gas supply passage 108 installed in the sidewall inner layer 44 disposed on the inner side of the plurality of layers and communicating with the buffer unit 106, a space 75 installed inside the sidewall inner layer 44, A configuration including opening holes 110 formed at equal intervals in the circumferential direction and the vertical direction of the side wall inner layer 44 so as to eject the cooling air 90 from the gas supply passage 108 into the space 75 for each cooling zone. to be.

6 is an enlarged view of the connection state of the heat insulating structure 42 and the check damper 104 shown in FIG. 5. Here, the CL zone shown in FIG. 5 is enlarged. In addition, the gas supply passage 108 and the opening hole 110 provided in the side wall inner layer 44 are omitted.

A partition portion 105 is provided between the side wall outer layer 45 and the side wall inner layer 44, and a buffer portion 106 is provided in the space between the partition portions 105. Further, the buffer unit 106 is configured to be divided into an upper region and a lower region by the partition unit 106a. Since this partitioning portion 106a is provided, it is possible to suppress the occurrence of convection occurring in the buffer portion 106. This was caused by convection in the heat insulating structure 42, that is, the buffer part 106 due to the temperature difference between the side wall heating element 56 and the water cooling jacket (not shown). In particular, when the rapid cooling function was not used, the temperature difference was about 1°C above and below the cooling zone. In addition, the partition portion 106b as the third partition portion shown in FIG. 6 divides the intake portion 113 as an inlet port that communicates the gas introduction passage 107 and the buffer portion 106 into two. Details of the partitioning portion 106b and the intake portion 113 will be described later.

A check damper 104 is provided through the gas introduction path 107. Since the material of the check damper 104 and the back diffusion preventing member 104a is SUS, it is connected to the heat insulating material used for the heater unit 40, and is thus configured in consideration of heat resistance. Further, a heat insulating cloth 111 for absorbing thermal expansion is provided between the case 41 and the sidewall outer layer 45.

As shown in Fig. 6, with the reverse diffusion preventing member 104a open, the cooling air 90 is once stored in the buffer unit 106, and through a gas supply flow path 108 (not shown), a space ( 75). On the other hand, when the cooling air 90 is not used, the reverse diffusion preventing member 104a is closed to prevent convection between the intake pipe 101 and the heat insulating structure 42 (not shown).

Further, the opening hole 110 is formed so as to avoid a position facing the gas introduction path 107, so that the cooling air 90 supplied from the gas introduction path 107 passes through the buffer unit 106 The cooling air 90 supplied from the gas introduction path 107 not directly introduced into the space 75 from the 110 is configured to be temporarily stored in the buffer unit 106.

Thereby, the cooling air 90 introduced into the gas introduction path 107 is temporarily stored in the buffer part 106, and the gas supply pressure applied to each opening hole 110 is made equal. Accordingly, the cooling air 90 having the same flow rate and the same flow rate is blown out of each opening hole 110 formed in the buffer unit 106.

In addition, the cross-sectional area of the passage of the two intake portions 113 and the cross-sectional area of the passage of the buffer portion 106 in each zone are made larger than the sum of the cross-sectional areas of the passage of the opening hole 110. Thereby, since the cooling air 90 introduced by opening the reverse diffusion preventing member 104a is supplied through the intake part 113, it is easy to be stored in the buffer part 106, and the cooling air 90 through the opening hole 110 ) Is configured to be supplied at the same flow rate and the same flow rate.

7 is an exploded view of the sidewall inner layer 44. As shown in Fig. 7, the partition portion 105 is separated into a plurality of cooling zones U1, U2, CU, C, CL, L1, L2, and the opening hole 110 is vertically ( It is arranged in an appropriate position in the height direction) and the horizontal direction (circumferential direction). The opening holes 110 are arranged in a plurality of stages in the vertical direction for each zone, and a plurality of opening holes 110 are arranged in the horizontal direction. Specifically, while the number of rows of the opening holes 110 formed in the buffer unit 106 is determined according to the length of each zone in the vertical direction, the opening holes 110 are formed approximately equally in the circumferential direction in each row. Has been. In addition, in each zone, a plurality of areas (A, B, C, ... W, X) are formed in the circumferential direction, and are arranged in a zigzag in the height direction within any one zone and within each area. In addition, the opening holes 110 are arranged substantially equally at equal intervals in the vertical direction and the horizontal direction in the entire zone.

In the circumferential direction of each of the cooling zones U1, U2, CU, C, CL, L1, and L2, 12 opening holes 110 are respectively arranged. In the U1 zone, U2 zone, and L2 zone, two rows of opening holes 110 are formed in the height direction, respectively, and the CU zone, C zone, CL zone, and L1 zone have four opening holes 110 in the height direction, respectively. Is formed. Therefore, in the U1 zone, U2 zone, and L2 zone, 24 opening holes 110 are formed, respectively, and in the CU zone, C zone, CL zone, and L1 zone, 48 opening holes 110 are formed, respectively. Accordingly, the flow rate ratio introduced into the intake pipe 101 supplied to each of the U1 zones (U2 and L2 zones) and the C zones and the remaining zones is respectively U1 zone (U2, L2 zone): C zone (CU , CL, L1 zone) = 1:2 = 24 opening holes 110: 48 opening holes 110).

In addition, the opening hole 110 is formed so as to avoid a position where the intake part 113 provided at the boundary between the gas introduction path 107 and the buffer part 106 is provided. In other words, the opening hole 110 can be formed as long as it is at a position not facing the intake portion 113. Moreover, it is arrange|positioned so that the cooling air 90 ejected from the opening hole 110 may be ejected avoiding the side wall heat generating element 56. The thermocouple 65 not only avoids direct contact with the cooling air 90 ejected from the opening hole 110, but is covered with the windshield block 112 so as not to be affected by the cooling air 90. In addition, although the size of the opening hole 110 is different in FIG. 7, it is a schematic drawing, and the opening cross-sectional area of each opening hole 110 is formed in substantially the same size.

Control zones shown on the left side of FIG. 7 (U1, U2, CU, C, CL, L1, L2 in this embodiment) and cooling zones U1, U2, CU, C, CL, shown on the right side of FIG. L1 and L2) are the same number, and each of the CU zone, C zone, CL zone, L1 zone, and L2 zone has the same flow path cross-sectional area. In other words, each of the CU zone, C zone, CL zone, L1 zone, and L2 zone coincides with the area enclosed between the upper and lower partitions 105. However, the cross-sectional area of the flow path of the U1 zone and U2 zone is constituted by a larger control zone. Thereby, the upper region (U1 zone and U2 zone) of the plurality of cooling zones is configured to have a shorter vertical length than the upper control zone (U1 zone and U2 zone) of the plurality of control zones. In other words, the cooling zone (U1 zone and U2 zone) coincident with the area enclosed between the upper and lower partitions 105 is deviated from the control zone (U1 zone and U2 zone) to the lower side. Details of the arrangement positions of the upper regions of the control zone (U1 zone and U2 zone) and the upper regions of the cooling zone (U1 zone and U2 zone) will be described later. In addition, the U1 zone and U2 zone of the cooling zone have the same flow path cross-sectional area as the L2 zone.

As shown in Fig. 7, the flow path cross-sectional area of the U1 zone, the U2 zone, and the L2 zone is small, and the cross-sectional area of the flow path of other cooling zones (eg, C zone) is formed. In the C zone, a partition portion 106a is provided that divides the buffer portion 106 into an upper region and a lower region. The regions divided into upper and lower sides are configured to have the same flow path cross-sectional area as, for example, U1 zones (U2 zones and L2 zones). In addition, similarly to the C zone, the zones of the CU zone, CL zone, and L1 zone having a large flow path cross-sectional area are similarly divided into upper and lower regions by the partitioning portion 106a. As described above, since the regions provided in all of the cooling zones have substantially the same flow path cross-sectional area by the partition 106a, the cooling air 90 proportional to the length in the height direction of the cooling zone is supplied to the intake pipe 101. By doing so, the cooling air 90 that has passed through the gas introduction path 107 can be spread evenly from the intake portion 113 into the buffer portions 106.

In addition, as shown in FIG. 7, the intake part 113 which is the introduction port of the cooling air 90 to the heat insulating structure 42 has a rectangular shape. This intake part 113 is divided into two areas by the partition part 106b, and the heights of the two areas divided by the partition part 106b are each 114 mm. In addition, this height is substantially the same as the height of the buffer portion 106 in the U1 zone, U2 zone, and L2 zone. Therefore, by supplying the cooling air 90 to the intake pipe 101 to the U1 zone, the U2 zone, and the L2 zone, the buffer portion from the intake pipe 101 by the partition portion 106b provided in the buffer portion 106 Since the direction of the gas supplied to 106 is uniformly determined, the cooling air 90 introduced from the intake unit 113 can be spread evenly in each buffer unit 106.

In order to divide into two intake parts 113, a partition 106b is provided in each cooling zone. In particular, in the U1 zone, U2 zone, and L2 zone, the cooling air 90 is formed by the partition 106b. The flow direction is determined in the circumferential direction. Thereby, the gas passing through the gas introduction path 107 can be efficiently and evenly spread in the circumferential direction in the buffer unit 106 by the partition unit 106b provided in the buffer unit 106. Further, in order to increase this effect, the intake pipe 101 may be connected with the intake portion 113 inclined.

In this way, since the opening holes 110 are arranged according to each cooling zone and the partition 106a and/or the partition 106b are provided in the buffer unit 106, it is proportional to the length in the height direction of the cooling zone. By supplying one cooling air 90 to the intake pipe 101, the cooling air 90 having the same flow rate and the same flow rate from the opening hole 110 in each cooling zone can be supplied toward the process tube 11. Further, it is possible to adjust so as to supply the same flow rate and flow rate of the cooling air 90 from the opening hole 110 in each cooling zone. Thereby, the process tube 11 installed at the position opposite to each cooling zone can be efficiently cooled, for example, during rapid cooling (e.g., the above-described heating step S5), temperature deviation within and between zones Can be made smaller.

Therefore, when the cooling air 90 of the determined flow rate is introduced into the intake pipe 101 of each cooling zone, the cooling air 90 introduced by opening the reverse diffusion preventing member 104a is passed through the intake part 113. It is stored in the buffer unit 106. In particular, according to the present embodiment, the partitions 106a and 106b are appropriately installed in the buffer unit 106 according to the cooling zone, so that the cooling air 90 is efficiently spread evenly in the buffer unit 106, thereby It is configured so that the supply pressure applied to the hole 110 becomes the same. Therefore, the cooling air 90 having the same flow rate and flow rate can be supplied from the opening hole 110 through the gas supply passage 108 in the entire zone and between all zones, so that the process tube 11 can be evenly cooled. . In addition, the flow rate of the cooling air 90 is preferably a flow rate in the adjustable range of the control valve 102. Thereby, the flow rate of the cooling air 90 introduced into each zone can be precisely controlled.

Therefore, in the present embodiment, the cooling air 90 having the same flow rate and flow rate can be supplied in the entire zone and between all zones from the opening hole 110 through the gas supply passage 108, so that the process tube 11 is equalized. Can be cooled down. In addition, the flow rate of the cooling air 90 is preferably a flow rate in the adjustable range of the control valve 102. Thereby, the flow rate of the cooling air 90 introduced into each zone can be precisely controlled.

In addition, the opening hole 110 is formed to avoid a position facing the gas introduction path 107, and the cooling air 90 ejected from the opening hole 110 is arranged to avoid the side wall heating element 56. Of course.

In addition, in this embodiment, the division part 105 is arrange|positioned so that the number of control zones and the number of cooling zones may match. Accordingly, continuous control of heating and cooling is possible by making the number of control zones and the number of cooling zones the same, and in particular, the arrangement position of the cooling zones U1 and U2 relative to the control zones U1 and U2 By studying, it is possible to shorten the temperature recovery time at the time of rising/falling temperature. However, it is not limited to this form, and it is not denied that the number of control zones and the number of zones are arbitrarily set.

In this embodiment, since the heights of the cooling zones U1 and U2 facing the control zones U1 and U2 are configured to be lower than the heights of each zone, the cooling air 90 can be efficiently supplied to each control zone. I can. Thereby, the cooling air 90 supplied to the control zones U1 and U2 and the cooling air 90 supplied to the other control zones can be made equal, and the control zone CU, Temperature control equivalent to C, CL, L1, L2) can be performed.

In this way, in this embodiment, by shifting the cooling zones U1 and U2 opposite to the control zones U1 and U2, where it is difficult to efficiently supply the cooling air 90 close to the exhaust side, the control zone U1, The same temperature control characteristics as the inner space 75 (not shown) facing U2) and the inner space 75 (not shown) facing other control zones can be maintained, improving the responsiveness of heating and cooling control between zones. can do.

(Example)

Next, an example in which the cooling unit 100 in this embodiment is verified will be described using each of FIGS. 8 to 12.

FIG. 8 shows a table comparing the injection wind speed (flow velocity) of the cooling air 90 when ejected from each opening hole 110 in the C zone shown in FIG. 7. The temperature is a result of measuring the flow velocity of the opening hole 110 when the cooling air 90 of 2.0 m ³ /min is supplied to the intake pipe 101 in the C zone at room temperature. As described above, according to the present embodiment, the speed of injection from each of the opening holes 110 can be made substantially the same. Here, as shown in Fig. 7, a is the uppermost area of the C zone, b is the second area from the top of the C zone, c is the third area from the top of the C zone, and d is 4 from the top of the C zone. Each of the second (lowest) areas is indicated.

9 is a result of measuring the air volume of the gas introduction path 107 of the cooling unit in the present embodiment. The air volume in each zone is the air volume proportional to the zone height. At this time, the air volume (average air volume) per one of the opening holes 110 is 0.04 to 0.05 m ³ /min, and the speed sprayed from each opening hole 110 in the entire zone can be made substantially the same.

10 shows the result of confirming the heating effect (temperature interference matrix data). Specifically, the set temperature (600°C in the embodiment) is increased by about 5°C for each zone, and the result of confirming the temperature influence range at that time is superimposed. For example, if the waveform is in the U1 zone, for example, in the drawing It is marked as U1+5. As shown in FIG. 10, the heating influence range of the U1 zone and the U2 zone is shifted to the lower side than the respective heating zone division positions. In this embodiment, cooling zones U1 and U2 are arranged in accordance with the deviation of the heating influence range of the U1 zone and U2 zone, so that the process tube 11 is cooled to the heating zone of the U1 zone and U2 zone. Air 90 can be supplied.

In addition, since the exhaust system of the cooling device 100 is provided above, in particular, in the U1 zone and U2 zone, the range of influence of the cooling by the cooling device 100 tends to deviate upward from the heating zone division position. The cooling zones U1 and U2 are disposed at a position shifted downward from the heating zones U1 and U2. For example, in the plurality of cooling zones shown in FIG. 7 described above, the cooling zone is divided in consideration of the deviation of the heating influence range and the cooling influence range, whereby the cooling effect by the cooling air 90 Is improving.

In addition, as shown in Fig. 2, the cooling zone of the cooling device 100 is provided with only the opening hole 110 at a position opposite to the area (substrate processing area of the boat 31) with various substrates including the product substrate. Rather, it is configured to form the opening hole 110 at a position opposite to the upper side of the process tube 11 (the upper side of the substrate processing area of the boat 31). Thereby, the flow rate and flow rate of the cooling air 90 supplied to the entire process tube 11 can be made equal, and as a result, the temperature variation within and between zones can be made small.

11 is a comparison of the temperature distribution of each zone when the cooling unit 100 is stabilized at 600° C. when not in use. Thereby, according to the cooling unit 100 in this embodiment, temperature uniformity between wafers can be improved.

As described above, according to this embodiment, the following effects are exhibited.

(a) According to the present embodiment, an intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe to adjust the flow rate of the gas, and a gas supplied from the intake pipe A buffer unit that temporarily stores the gas and an opening installed to eject the gas stored in the buffer unit toward the reaction tube, and the flow rate of the gas introduced into the intake pipe is set according to the length ratio in the vertical direction of the zone. By doing so, since the control valve is opened and closed to adjust the flow rate and flow rate of the gas ejected from the opening toward the reaction tube, the reaction tube can be cooled evenly.

(b) According to the present embodiment, since the intake pipe is provided with a reverse diffusion preventing portion that prevents reverse diffusion of the atmosphere from the furnace, the reverse diffusion is prevented when the cooling gas is not used, so that the heating device 40 Heat influence can be suppressed.

(c) According to this embodiment, since the cross-sectional area of the flow path of the intake pipe provided for each cooling zone and the cross-sectional area of the flow path of the buffer portion are larger than the sum of the cross-sectional areas of the opening holes formed for each cooling zone, the intake pipes provided in each cooling zone By adjusting the flow rate of the cooling gas supplied to the cooling zone, the flow rate and flow rate of the cooling gas ejected from each opening hole can be made equal in the cooling zone. Further, by making the gas supply pressure substantially the same in each of the opening holes, it is possible to equalize not only within the cooling zone but also between the cooling zones, so that the reaction tube can be cooled evenly.

(d) According to the present embodiment, if the intake pipe is provided with a throttle for reducing the flow rate, the flow rate supplied from the intake pipe can be reduced when the diameter of the intake pipe is too large and it is necessary to suppress the flow rate.

(e) According to the heat insulating structure according to the present embodiment, the side wall portion is formed in a cylindrical shape, the side wall portion is formed in a multi-layered structure, the partition portion separating the side wall portion into a plurality of regions in the vertical direction, and the side wall portion The buffer unit is installed between the partitions adjacent to each other, the gas introduction path that is installed on the outer layer of the plurality of layers of the side wall and communicates with the buffer unit, and the side wall inner layer of the plurality of layers of the side wall And a gas supply passage communicating with the buffer unit, and an opening provided to eject cooling gas from the gas supply passage into a space inside the inner layer of the side wall, so that the flow rate of the cooling gas supplied to the intake pipe installed in each region is By adjusting, the flow rate and flow rate of the cooling gas ejected from each opening provided in the circumferential direction and in the height direction in each region can be made equal.

(f) According to the present embodiment, the height of the cooling zones U1 and U2 is shifted to the lower side of the heating zones U1 and U2, so that not only the reaction tube facing the substrate processing region of the boat 31 but also the boat 31 ), the cooling gas can be evenly supplied to the reaction tube in the upper area of the substrate processing area, so that the cooling gas can be uniformly contacted not only within the cooling zone but also between the cooling zones, and the entire reaction tube can be evenly cooled. Thereby, the temperature controllability of the heating zones U1 and U2 can be improved.

(g) According to the present embodiment, the flow rate and flow rate of the cooling gas supplied to the entire process tube 11 are equalized by shifting the heights of the cooling zones U1 and U2 to the lower side of the heating zones U1 and U2. In this way, since the entire reaction tube can be cooled evenly, the responsiveness of heating and cooling control between the control zones can be improved.

(h) Further, according to the present embodiment, since the supply pressure applied to each opening hole in each cooling zone is made the same, while the cooling gas is supplied from the opening hole at the same flow rate and the same flow rate, temperature control of each control zone Since it is configured to maintain the characteristics, it is possible to improve the responsiveness of heating and cooling control between zones, and as a result, the temperature recovery time of the substrate and the uniformity of the in-plane temperature of the substrate are improved, resulting in an improvement in rapid heating capability. do. In addition, since the temperature deviation during rapid cooling can be made substantially equal in each zone, temperature uniformity between substrates is improved.

In addition, the present invention can be applied not only to a semiconductor manufacturing apparatus but also to an apparatus for processing a glass substrate such as an LCD apparatus.

Further, the present invention relates to a semiconductor manufacturing technology, in particular, a heat treatment technology in which a substrate to be processed is accommodated in a processing chamber and processed in a state heated by a heating device. For example, a semiconductor integrated circuit device (semiconductor device) is incorporated. It can be applied to an effective substrate processing apparatus used for oxidation treatment, diffusion treatment, reflow for carrier activation or planarization after ion doping, film formation treatment by annealing and thermal CVD reaction on the semiconductor wafer to be used.

1: substrate (wafer) 10: substrate processing apparatus
11: reaction tube (process tube) 14: processing room (room space)
40: heating device (heater unit) 100: cooling unit (cooling device)

Claims (20)

A heat insulating structure having a side wall portion formed in a cylindrical shape outside of a reaction tube heated by a heating device having a plurality of control zones, and wherein the side wall portion is formed in a plurality of layers,
A first partition portion isolating the sidewall portion into a plurality of regions so as to match the number of control zones, a buffer portion disposed between the first partition portion adjacent to each other in the sidewall portion, and a reaction in the buffer portion It has openings arranged at equal intervals in the circumferential direction of the tube,
In the upper region facing the upper control zone, the heat insulating structure is configured by shifting the upper first partition portion downward so that the height of the region becomes lower than the height of the control zone. The method of claim 1,
The heat insulation structure further comprising a gas introduction path provided in an outer layer disposed on the outside of the plurality of layers of the side wall portion for each of the areas. The method of claim 1,
In addition, it has a gas supply flow path communicating with the buffer unit,
The gas supply flow path is provided in an inner layer disposed inside of the plurality of layers of the side wall portion for each of the regions. The method of claim 1,
In addition, it has a gas supply flow path communicating with the buffer unit,
The openings are provided to eject cooling gas from the gas supply passage to the reaction tube for each of the regions. The method of claim 1,
A cross-sectional area of the flow path of the buffer unit provided for each of the regions is larger than the sum of the cross-sectional areas of the openings provided for each of the regions. The method of claim 1,
The openings are all arranged at equal intervals in the circumferential direction of the reaction tube on the side of the buffer unit. The method of claim 1,
The openings are all arranged at equal intervals in the vertical direction of the reaction tube on the side of the buffer unit. The method of claim 1,
The buffer unit is provided with a second partition unit for each area,
The second partition portion is configured to determine a direction of gas supplied to the buffer portion. The method of claim 1,
The buffer unit further has a third partition unit for suppressing convection occurring in the region isolated by the first partition unit. The method of claim 2,
The opening is installed so as to avoid a position opposite to an inlet communicating the gas introduction path and the buffer unit. It is installed to cover the periphery of a heating device having a plurality of control zones,
A first partition portion divided into a plurality of zones to match the number of control zones; a buffer portion installed for each zone and disposed between the first partition portions adjacent to each other; and a circumference of the reaction tube within the buffer portion In the upper region facing the control zone on the upper side, having openings provided at equal intervals in the direction, the first partition on the upper side is lowered so that the height of the region is lower than the height of the control zone. A cooling unit constructed by shifting it. The method of claim 11,
In addition, it is installed for each zone and has an intake pipe for supplying a gas for cooling the reaction tube,
The cooling unit, wherein the intake pipe is configured to be provided with a reverse diffusion preventing portion that prevents reverse diffusion of the atmosphere from within the furnace. The method of claim 11,
The openings are all installed at equal intervals in the circumferential direction of the reaction tube in the buffer unit. The method of claim 11,
The openings are all provided at equal intervals in the upper and lower directions of the reaction tube in the buffer unit. The method of claim 12,
The buffer unit is provided with a second partition unit for each of the zones,
The second partition portion is configured to determine a direction of gas supplied to the buffer portion from the intake pipe. It is installed to cover the periphery of a heating device having a plurality of control zones,
A first partition portion divided into a plurality of zones to match the number of control zones; a buffer portion installed for each zone and disposed between the first partition portions adjacent to each other; and a circumference of the reaction tube within the buffer portion In the upper region facing the control zone on the upper side, having openings provided at equal intervals in the direction, the first partition on the upper side is lowered so that the height of the region is lower than the height of the control zone. A substrate processing apparatus provided with a cooling unit configured to be shifted. delete delete The method of claim 16,
The buffer unit is provided with a second partition unit installed for each zone,
The second partition unit is configured to determine a direction of a gas flowing in the buffer unit. A step of carrying a plurality of substrates into a reaction tube and processing the substrates at a predetermined temperature by a heating device having a plurality of control zones;
A first partition portion divided into a plurality of zones to match the number of the control zones, a buffer portion provided for each zone and disposed between the first partition portions adjacent to each other in the upper and lower sides, and the reaction tube in the buffer portion In the upper region facing the control zone on the upper side, having openings provided at equal intervals in the circumferential direction, the first partition on the upper side is lower side so that the height of the region is lower than the height of the control zone. A step of cooling the reaction tube by a cooling unit configured to be shifted by
Step of removing the processed substrate from the reaction tube
Having a method of manufacturing a semiconductor device.

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