JP4422525B2 - Semiconductor manufacturing equipment - Google Patents

Description

  The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor device while performing heat treatment on a semiconductor substrate, and in particular, a vertical type for manufacturing a semiconductor device and a high-quality silicon wafer by heat-treating a silicon wafer at a high temperature of 1200 ° C. or higher. The present invention relates to a semiconductor manufacturing apparatus.

  FIG. 5 is a schematic structural diagram of a vertical high-temperature heat treatment furnace applied to a conventional vertical semiconductor manufacturing apparatus. Quartz cannot be used in a vertical high-temperature heat treatment furnace under a high temperature environment of 1200 ° C. or higher, and therefore, high purity and high heat resistant silicon carbide is mainly used as a material for the reaction furnace. Accordingly, a silicon wafer (hereinafter simply referred to as a wafer) 9 to be processed is mounted on a boat 3 made of silicon carbide. The boat 3 is installed on a heat insulating cap 4 for the purpose of lowering the temperature of the furnace opening. The reaction chamber 14 is sealed with a reaction tube 2 made of silicon carbide, a manifold 6 made of quartz, and a cap 5 made of quartz. Further, the manifold 6 and the cap 5 are sealed with an O-ring 8 in order to maintain airtightness. A gas required for processing is introduced into the sealed reaction chamber 14 through the nozzle 7, and the gas is discharged from an exhaust port installed in the manifold 6. A heater 1 is provided outside the reaction tube 2, and the entire reaction furnace is heated by the heater 1 to adjust the wafer 9 to a desired temperature. The temperature in the reaction chamber 14 is monitored and controlled by the temperature sensor 10.

  The wafer 9 is placed in an arbitrary gas environment in a sealed reaction chamber and heated to an arbitrary temperature by the heater 1, thereby performing a necessary process. At this time, the temperature setting of the wafer 9 is very important. Therefore, a temperature sensor 10 is installed between the reaction tube 2 made of silicon carbide and the heater 1. A thermocouple temperature sensor is used as the temperature sensor 10, and several types are used for control, monitoring, and overheat protection. 6 is an external view of a temperature sensor using a thermocouple in the vertical high-temperature heat treatment furnace shown in FIG. As shown in FIG. 6, the temperature sensor 10 has a shape in which a platinum-based thermocouple 21 is passed through a ceramic insulating tube 22 made of alumina or the like and is further sealed with a ceramic protective tube 23 made of alumina or the like.

Also known is a heat treatment apparatus for controlling the temperature of the heater by inserting a radiation thermometer inside the reaction chamber and directly measuring the temperature in the furnace and feeding it back to a control circuit. By directly measuring the temperature in the furnace atmosphere in this way, the temperature in the reaction chamber can be controlled with high accuracy, so that the wafer can be optimally heat-treated. (For example, see Patent Document 1)
JP 2002-110556 A

  However, in the conventional vertical high-temperature heat treatment furnace shown in FIG. 5, the temperature sensor 10 measures the temperature of the space between the heater 1 and the reaction tube 2. Affects the detected temperature. In particular, when air is forced to flow through this space in order to forcibly reduce the temperature in the reaction chamber, the temperature detected by the temperature sensor 10 rapidly decreases compared to the actual temperature in the reaction chamber 14. For this reason, it becomes impossible to accurately monitor and control the temperature in the reaction chamber, and as a result, highly accurate temperature control cannot be performed. Therefore, the product yield of the wafer may be reduced.

  Further, when the platinum-based thermocouple 21 is used as the temperature sensor 10 in a high temperature environment, problems such as reduction in electromotive force or disconnection occur. In particular, when the electromotive force of the control temperature sensor is reduced, the accuracy of the control temperature in the reaction chamber 14 is reduced, and the wafer 9 is not optimally heat treated. As a result, the yield of semiconductor products manufactured by the semiconductor manufacturing apparatus decreases, and as a result, the reliability of the semiconductor manufacturing apparatus itself decreases.

  Furthermore, when directly measuring the furnace temperature with a radiation thermometer as disclosed in Patent Document 1 above, the radiation thermometer must be inserted into the reaction chamber, so that the airtightness near the insertion port is reduced. The seal structure becomes complicated to maintain. Therefore, the structure of the whole heat treatment apparatus may become complicated and the apparatus cost may increase.

  The present invention has been made in view of the above problems. In a semiconductor manufacturing apparatus that performs high-temperature heat treatment on a semiconductor substrate such as a wafer, air flows in the vicinity of a temperature sensor that monitors and controls the temperature in the furnace. However, an object of the present invention is to provide a semiconductor manufacturing apparatus including a heat treatment furnace having a built-in temperature sensor capable of accurately detecting the temperature in the furnace.

  In order to solve the above-described problems, a semiconductor manufacturing apparatus according to the present invention heat-treats a semiconductor substrate mounted in a reaction chamber covered with a reaction tube while heating the reaction tube made of silicon carbide by a heating unit. A semiconductor manufacturing apparatus comprising a radiation thermometer for detecting a reaction tube infrared ray radiated from a reaction tube while shielding a heater infrared ray radiated from a heating means and measuring a temperature in the reaction chamber.

  The specific configuration of the semiconductor manufacturing apparatus according to the present invention is as follows. That is, in the semiconductor manufacturing apparatus of the present invention, a heat treatment furnace introduces a reaction tube made of silicon carbide covering a reaction chamber on which a semiconductor substrate is mounted, a heating means such as a heater for heating the reaction tube, and a process gas introduced into the reaction chamber. Gas introduction means, discharge means for discharging the gas in the reaction chamber, a boat for holding a plurality of semiconductor substrates in parallel in the vertical direction, a board lifting / lowering means for inserting / withdrawing the boat into / from the reaction furnace, and lifting / lowering A cap for sealing the reaction chamber and a radiation thermometer for monitoring and controlling the temperature in the reaction chamber, and the radiation thermometer detects the temperature of the reaction tube by infrared radiation so as to control the temperature in the reaction chamber. It is configured. The radiation thermometer is equipped with a protective cover to prevent the reflected light or stray light from the heating means such as a heater from entering. Therefore, the radiation thermometer only detects infrared rays radiated from the reaction tube. Can be detected. As a result, the temperature in the reaction chamber can be measured with high accuracy, and a highly reliable semiconductor manufacturing apparatus can be constructed.

  As described in detail above, in the semiconductor manufacturing apparatus of the present invention, the temperature sensor that monitors and controls the temperature in the furnace is changed from a conventional thermocouple type temperature sensor to a radiation thermometer using infrared radiation. Thereby, even if air flows in the vicinity of the temperature sensor, the temperature in the furnace can be accurately detected, and thus it is possible to realize a heat treatment furnace capable of performing highly accurate temperature control. In particular, in high-temperature heat treatment using a vertical high-temperature heat treatment furnace, troubles such as a drop in electromotive force and disconnection that occur with conventional thermocouple temperature sensors are eliminated, and the airflow around the temperature sensor is less affected. More accurate temperature measurement and temperature control can be performed. Thereby, a highly reliable semiconductor manufacturing apparatus can be constructed.

  Embodiments of a semiconductor manufacturing apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic structural diagram of a vertical high-temperature heat treatment furnace applied to a vertical semiconductor manufacturing apparatus of the present invention. The vertical high temperature heat treatment furnace of the present invention shown in FIG. 1 differs from the conventional vertical high temperature heat treatment furnace shown in FIG. 5 in that a temperature sensor for monitoring and controlling the temperature of the reaction chamber 14 is provided by a conventional thermocouple. Only the temperature sensor 10 is changed to a radiation thermometer 13 using infrared radiation. Accordingly, the same constituent elements as those of the prior art are denoted by the same reference numerals, and redundant description of the constituent elements is omitted.

  That is, in the conventional vertical high-temperature heat treatment furnace shown in FIG. 5, the temperature sensor 10 of the thermocouple is installed to measure the temperature of the space between the heater 1 and the reaction tube 2. On the other hand, in the vertical high-temperature heat treatment furnace of the present invention shown in FIG. 1, a highly heat-resistant and transparent rod 11 such as ore sapphire is inserted into the heater 1 so that the surface temperature of the reaction tube 2 made of silicon carbide is infrared. Detection is performed by radiation, and the surface temperature of the reaction tube 2 is measured by a radiation thermometer 13 through an optical fiber 12. In the vertical high-temperature heat treatment furnace according to the present invention, silicon carbide is used as the material of the reaction tube 2 because it is difficult to measure the temperature with the radiation thermometer 13 in the reaction tube made of quartz as the processing temperature increases. .

  The radiation thermometer 13 used in the vertical high-temperature heat treatment furnace of the present invention shown in FIG. 1 is a drop in electromotive force or disconnection in a high-temperature environment, like a thermocouple temperature sensor 10 conventionally used. There is no risk of such problems. Further, the radiation thermometer 13 can measure the surface temperature of the reaction tube 2 by infrared radiation, so that the temperature near the wafer 9 can be accurately measured as compared with the conventional vertical high temperature heat treatment furnace. Therefore, it becomes possible to monitor and control the furnace temperature with higher accuracy. Furthermore, since the radiation thermometer 13 can measure the radiation temperature of the reaction tube 2 having a large heat capacity in a non-contact manner, the radiation thermometer 13 is not easily influenced by the airflow flowing between the reaction tube 2 and the heater 1, and stable temperature measurement. In addition, temperature control can be performed.

  However, even when the radiation thermometer 13 is used in the vertical high-temperature heat treatment furnace shown in FIG. 1, the rod 11 receives the radiation of the heater infrared from the heater 1 in addition to the radiation of the reaction tube infrared from the reaction tube 2. For this reason, the surface temperature of the reaction tube 2 may not be detected accurately. Therefore, in order to eliminate the influence of the heater infrared radiation from the heater 1 and the rod 11 accurately detects the temperature, the following measures are taken.

  FIG. 2 is a conceptual diagram showing a state in which the radiation thermometer 13 is affected by the radiation of the heater infrared rays from the heater in the vertical high-temperature heat treatment furnace shown in FIG. That is, FIG. 2 is an enlarged view of the vicinity of the rod 11 in the vertical high-temperature heat treatment furnace shown in FIG. As shown in FIG. 2, the radiant light (that is, heater infrared) emitted from the heater 1 directly enters the rod 11, or the radiant light (heater infrared) emitted from the heater 1 is reflected on the reaction tube 2 and the rod 11. There is a risk of intrusion. Originally, the rod 11 detects normal infrared rays (that is, reaction tube infrared rays) from the reaction tube 2 and measures temperature, but detects the radiation of heater infrared rays from the heater 1 as shown in FIG. Therefore, the furnace temperature cannot be accurately measured.

  FIG. 3 is a conceptual diagram showing a state in which the radiation thermometer 13 is not affected by the radiation of the heater infrared rays from the heater in the vertical high-temperature heat treatment furnace shown in FIG. As shown in FIG. 3, the infrared rays from the heater 1 are covered by covering the side surface of the rod 11 with an opaque and heat-resistant protective cover 18 such as alumina and widening the end of the protective cover 18. Intrusion of radiation can be prevented. For example, the heater infrared radiation from the heater 1 is reflected at the side of the protective cover 18 or at the brim portion at the tip of the protective cover 18, so that the heater infrared radiation enters the rod 11. It is not. On the other hand, radiation of regular infrared rays (reaction tube infrared rays) from the reaction tube is reliably detected by the rod 11. Thus, a radiation thermometer (not shown) can accurately detect the temperature of the reaction tube 2 without being affected by the radiation of the heater infrared rays from the heater 1.

  The operation performed by the vertical high-temperature heat treatment furnace shown in FIG. 1 when the influence of the heater infrared rays from the heater is eliminated as shown in FIG. 3 will be described with reference to FIG. The wafer 9 is mounted on the boat 3 and stored in the reaction chamber 14 in the reaction tube 2, and the reaction tube 2 is heated by the heater 1. Further, a gas is supplied from the gas introduction pipe 15 to heat-treat the wafer 9. At this time, the reaction tube infrared ray radiated from the reaction tube 2 is detected by the rod 11 and transmitted to the radiation thermometer 13 through the optical fiber 12. Thereby, the radiation thermometer 13 detects the temperature of the reaction tube 2, that is, the temperature in the reaction chamber 14 in a non-contact manner, and controls the temperature in the reaction chamber 14 by a controller (not shown). At this time, the radiation thermometer 13 includes a protective cover (not shown) so as not to receive the heater infrared radiation from the heater 1. Temperature control can be performed with high accuracy.

  In the present invention, a vertical semiconductor manufacturing apparatus for high-temperature heat treatment that measures the temperature of the reaction tube 2 made of silicon carbide with the radiation thermometer 13 can be realized in this way. At this time, in the vertical high-temperature heat treatment furnace shown in FIG. 1, a plurality of rods 11 are used to detect several kinds of temperatures such as temperature control, temperature monitoring, and overtemperature protection, and take them into the radiation thermometer 13. Can do. Further, a radiation thermometer using a plurality of rods 11 and a thermocouple temperature sensor may be used in combination, or all may be a radiation thermometer.

  Therefore, the vertical high temperature heat treatment furnace of the present invention as shown in FIG. 1 can be realized by the following optimum components. That is, the vertical high-temperature heat treatment furnace used in the semiconductor manufacturing apparatus of the present invention includes at least a processing chamber (reaction chamber 14) for processing a substrate such as a wafer 9 inside the reaction tube 2 made of silicon carbide, and the reaction tube 2. A heating means (heater 1) for heating the reaction chamber 14 by a heating element provided so as to surround the rod, and a rod 11 serving as a temperature detection unit are disposed between the reaction tube 2 and the heater 1, and the temperature of the reaction tube 2 is set. A radiation thermometer 13 that detects the radiation of the reaction tube infrared rays, and a protective cover 18 that has a flange-like opening at the tip of the rod 11 and a shape surrounding the rod 11 so as to block the radiation of the heater infrared rays. It is the composition provided with.

  However, the semiconductor manufacturing apparatus of the present invention can be assembled as several variations based on the following components. The first variation is that a processing chamber (reaction chamber 14) for processing a substrate, a heating means (heater 1) for heating by a heating element provided so as to surround the processing chamber (reaction chamber 14), a processing chamber ( A temperature detecting means (radiation thermometer 13) that is provided outside the reaction chamber 14) and detects the temperature, and a detection portion (rod 11) of the temperature detection means (radiation thermometer 13) has the largest shape on the tip side. This is a semiconductor manufacturing apparatus having a heat treatment furnace including a cover (protective cover 18) surrounding the (rod 11).

  The second variation is that a processing chamber (reaction chamber 14) for processing the substrate in the reaction tube 2, a heating means (heater 1) for heating by a heating element provided so as to surround the reaction tube 2, and the reaction tube 2. A detector (rod 11) is disposed between the heating means (heater 1) and the radiation thermometer 13 for detecting the temperature of the reaction tube 2 and the tip of the detector (rod 11) of the radiation thermometer 13 is connected to the flange. A semiconductor manufacturing apparatus having a heat treatment furnace having a shape and a cover (protective cover 18) surrounding the detection portion (rod 11).

  The third variation is that a processing chamber (reaction chamber 14) for processing the substrate in the reaction tube 2 of silicon carbide material, and heating means (heater 1) for heating by a heating element provided so as to surround the reaction tube 2; A detection unit (rod 11) is disposed between the reaction tube 2 and the heating means (heater 1), and a radiation thermometer 13 for detecting infrared rays from the reaction tube 2 and detection by the detection unit (rod 11). A cover (protective cover 18) configured to surround the detection portion (rod 11) in order to block infrared rays other than the reaction tube infrared rays radiated from the reaction tube 2 with the largest end side. A semiconductor manufacturing apparatus having a heat treatment furnace configured as described above.

  In the present invention, it is also possible to realize a semiconductor manufacturing method in which heat treatment is performed on the substrate by performing temperature control using the radiation thermometer 13. That is, in the processing chamber (reaction chamber 14) for processing the substrate, heating means (heater 1) for heating by a heating element provided so as to surround the processing chamber (reaction chamber 14), and in the processing chamber (reaction chamber 14). Gas supply means for supplying the processing gas (gas introduction pipe 15), exhaust means for exhausting the inside of the processing chamber (reaction chamber 14) (exhaust pipe 16), and detection provided outside the processing chamber (reaction chamber 14) Temperature detection means (radiation thermometer 13) for detecting the temperature by the portion ((rod 11)) and a cover surrounding the detection portion (rod 11) with the detection end side of the detection portion ((rod 11) as the largest shape) A semiconductor manufacturing method using a heat treatment furnace including a (protective cover 18), the step of storing a substrate in a processing chamber (reaction chamber 14), and a heating means (heater) in the processing chamber (reaction chamber 14). 1) Heating process and processing A step in which temperature detection means (rod 11 and radiation thermometer 13) provided outside the (reaction chamber 14) detect the temperature of the processing chamber (reaction chamber 14) by reaction tube infrared; and a processing chamber (reaction chamber 14) When the substrate is heat-treated by a process gas supply means (gas introduction pipe 15) and a process chamber (reaction chamber 14) exhausted by an exhaust means (exhaust pipe 16). The rod 11 which is a detection part of the thermometer 13 blocks the infrared radiation other than the reaction tube infrared from the reaction tube 2 by the protective cover 18, thereby detecting the temperature in the processing chamber (reaction chamber 14) with high accuracy. Thus, a semiconductor manufacturing method in which a substrate is heat treated.

  Next, a specific configuration of a diffusion furnace used as a heat treatment at, for example, 300 to 1200 ° C. will be described. FIG. 4 is a configuration diagram of a vertical oxidation diffusion treatment furnace applied to the present invention. This vertical oxidation diffusion treatment furnace is a diffusion treatment furnace having a soaking tube. In FIG. 4, the heat equalizing tube 206 is made of a heat resistant material such as SIC, and has a cylindrical shape with the upper end closed and the lower end opened. For example, a reaction vessel (hereinafter referred to as reaction tube 203) made of a heat resistant material such as quartz (SiO 2) has a cylindrical shape with an opening at the lower end, and is arranged concentrically in the soaking tube 206. A gas supply pipe 232 made of, for example, quartz and an exhaust pipe 231 are connected to the lower portion of the reaction tube 203, and an inlet 234 connected to the gas supply tube 232 extends from the lower portion of the reaction tube 203 to the side of the reaction tube 203. For example, it rises into a thin tube and reaches the inside of the reaction tube 203 at the ceiling.

  The exhaust pipe 231 is connected to the exhaust port 235 of the reaction tube 203. The gas flows from the gas supply pipe 232 through the ceiling portion of the reaction tube 203 and is exhausted from an exhaust pipe 231 connected to the lower portion of the reaction tube 203. Further, a gas for processing is supplied into the reaction tube 203 through the gas supply tube 232 to the inlet 234 of the reaction tube 203. The gas supply pipe 232 is connected to a mass flow controller (MFC) 241 controlled by the gas flow rate control unit 302 or a moisture generator (not shown). The MFC 241 is connected to the gas flow rate control unit 302 and controls the flow rate of the supplied gas or water vapor (H 2 O) to a predetermined amount.

  A gas exhaust pipe 231 connected to a pressure regulator (for example, APC 242) is connected to the exhaust port 235 of the reaction pipe 203, and the gas flowing through the reaction pipe 203 is exhausted. By controlling the pressure, the pressure is detected by pressure detection means (hereinafter referred to as pressure sensor 245) so as to obtain a predetermined pressure, and the pressure control unit 303 performs control.

  At the lower end opening of the reaction tube 203, a disk-shaped holding body (hereinafter referred to as a base 257) made of, for example, quartz is detachable so as to be hermetically sealed via an O-ring 220. The base 257 is a disk-shaped lid ( It is attached on the seal cap 219) below. The seal cap 219 is connected to a rotating means (hereinafter referred to as a rotating shaft 254). The rotating shaft 254 holds the holder (hereinafter referred to as a quartz cap 218), a substrate holding means (hereinafter referred to as a boat 217), and the boat 217. A substrate (hereinafter referred to as a wafer 200) being rotated is rotated. The seal cap 219 is connected to an elevating means (hereinafter referred to as a boat elevator 115) and elevates the boat 217. The drive control unit 304 performs control so that the rotation shaft 254 and the boat elevator 115 have a predetermined speed.

  A heating means (hereinafter referred to as a heater 207) is concentrically arranged on the outer periphery of the heat equalizing tube 206. The heater 207 detects the temperature by temperature detection means (radiation thermometer 263) so that the temperature in the reaction tube 203 becomes a predetermined processing temperature, and performs control by the temperature control unit 301. As the temperature detection means 263, the radiation thermometer and the protective cover described with reference to FIGS. Thereby, it becomes possible to detect only the infrared rays from the soaking tube. The material of the rod is not particularly limited as long as it is highly heat-resistant and transparent, but ore sapphire is preferably used, but when used at 1050 ° C. or lower, quartz glass may be used. The material of the protective cover may be any material that is highly heat-resistant and opaque, but preferably an alumina material. However, when used at 1050 ° C. or lower, opaque quartz glass may be used.

  Next, an example of the method of oxidation and diffusion treatment by the vertical oxidation diffusion treatment furnace shown in FIG. 4 will be described. First, the boat 217 is lowered by the boat elevator 115. Then, a plurality of wafers 200 are held on the boat 217. Subsequently, the temperature in the reaction tube 203 is set to a predetermined processing temperature while being heated by the heater 207. The inside of the reaction tube 203 is filled with an inert gas in advance by the MFC 241 connected to the gas supply pipe 232, the boat 217 is lifted by the boat elevator 115 and moved into the reaction tube 203, and the internal temperature of the reaction tube 203 is changed. Maintain a predetermined processing temperature. For example, control may be performed so that a correlation between the internal temperature of the reaction tube 203 and the radiation thermometer 263 is obtained in advance and the deviation is corrected.

  After the inside of the reaction tube 203 is maintained at a predetermined pressure, the boat 217 and the wafer 200 held on the boat 217 are rotated by the rotation shaft 254. At the same time, a processing gas is supplied from a gas supply pipe 232 or water vapor is supplied from a moisture generator. The supplied gas descends the reaction tube 203 and is uniformly supplied to the wafer 200. The inside of the reaction tube 203 during the oxidation / diffusion process is exhausted through the exhaust pipe 231, and the pressure is controlled by the APC 242 so as to become a predetermined pressure, and the oxidation / diffusion process is performed for a predetermined time.

  When the oxidation / diffusion process is completed in this manner, the gas in the reaction tube 203 is replaced with an inert gas and the pressure is set to normal pressure in order to proceed to the next oxidation / diffusion process of the wafer 200. Thereafter, the boat 217 is lowered by the boat elevator 115, and the boat 217 and the processed wafer 200 are taken out from the reaction tube 203. The processed wafer 200 on the boat 217 taken out from the reaction tube 203 is replaced with an unprocessed wafer 200 and is again raised into the reaction tube 203 in the same manner as described above, and oxidation / diffusion processing is performed.

1 is a schematic structural diagram of a vertical high-temperature heat treatment furnace applied to a vertical semiconductor manufacturing apparatus of the present invention. FIG. 2 is a conceptual diagram showing a state in which a radiation thermometer 13 is affected by infrared radiation from a heater in the vertical high-temperature heat treatment furnace shown in FIG. 1. FIG. 2 is a conceptual diagram showing a state in which the radiation thermometer 13 is not affected by infrared radiation from a heater in the vertical high-temperature heat treatment furnace shown in FIG. 1. It is a block diagram of the vertical oxidation diffusion treatment furnace applied to the present invention. It is a schematic structural diagram of a vertical high-temperature heat treatment furnace applied to a conventional vertical semiconductor manufacturing apparatus. FIG. 6 is an external view of a temperature sensor using a thermocouple in the vertical high-temperature heat treatment furnace shown in FIG. 5.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Heater 2 Reaction tube 3 Boat 4 Thermal insulation cap 5 Cap 6 Manifold 7 Nozzle 8 O ring 9 Wafer 10 Temperature sensor 11 Rod 12 Optical fiber 13 Radiation thermometer 14 Reaction chamber 15 Gas introduction pipe 16 Exhaust pipe 17 Cover 18 Protective cover 21 Platinum Thermocouple 22 Ceramic insulation tube 23 Ceramic protection tube

Claims (4)

A semiconductor manufacturing apparatus that heats a semiconductor substrate mounted in a reaction chamber covered with a reaction tube while heating a reaction tube made of a heat-resistant material other than quartz by a heating means ,
The radiant heater infrared rays radiated from the radiation thermometer and the heating means for measuring the temperature of the reaction chamber and detecting the reaction tube infrared rays radiated from the previous SL reaction tube shields from entering into the pyrometer A semiconductor manufacturing apparatus comprising a cover provided on a thermometer . The cover is configured so that the detection end side of the detection unit of the radiation thermometer has the largest shape and surrounds the detection unit in order to block infrared rays other than the reaction tube infrared ray radiated from the reaction tube. It has been that the semiconductor manufacturing apparatus according to claim 1. The semiconductor manufacturing apparatus according to claim 2, wherein the detection unit is disposed between the reaction tube and the heating unit, and the cover has a brim shape on the tip side. A step of accommodating the substrate in a reaction chamber which is covered with the reaction tube consists of heat-resistant material other than quartz, heated by the heating means the reaction chamber, the heater infrared radiated from the previous SL heating means, radiation temperature And a step of performing a heat treatment on the substrate while detecting the infrared radiation of the reaction tube radiated from the reaction tube while shielding the penetration into the meter by a cover provided in the radiation thermometer. .

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