JP2006173531A - Substrate treating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treating apparatus capable of properly performing a heat treatment wherein temperature control is performed by properly measuring the actual temperature of a wafer by a heater. <P>SOLUTION: A hot water type heat-treating apparatus which is equipped with a treatment chamber 14 wherein the wafer 1 is treated, a heater 32 which is laid outside the treatment chamber 14 to heat the treatment chamber 14, a thermocouple 35 measuring the temperature of the treatment chamber 14, and a controller 33 which brings the heater 32 under feedback control according to the temperature measured by the thermocouple 35 and is such that a heat contacts 36 of the thermocouple 35 is fixed to a temperature-measured member 40 which has the same heat characteristic with the wafer 1 or similar heat characteristics and is smaller in external size than the wafer 1 bonds the heat contact 36, arranged in a groove part 41 recessed in the temperature-measured member 40, with an adhesive. The coating range and coating quantity of the adhesive can be controlled, so while the surface area of the temperature-measured member is maintained, the heat capacity is reducible. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus, and more particularly to a heat treatment technique for performing processing in a state in which an object to be processed is accommodated in a processing chamber and heated by a heater, for example, in a method for manufacturing a semiconductor integrated circuit device (hereinafter referred to as IC). A semiconductor wafer (hereinafter referred to as a wafer) on which an integrated circuit including semiconductor elements is formed is formed by oxidation treatment, diffusion treatment, carrier activation after ion implantation, reflow for annealing and planarization, annealing, and thermal CVD reaction. The present invention relates to an effective substrate processing apparatus such as a heat treatment apparatus (furnace) used for processing and the like (hereinafter referred to as heat treatment).

A batch type vertical hot wall heat treatment apparatus (hereinafter referred to as a hot wall heat treatment apparatus) is widely used for heat treatment of wafers in IC manufacturing methods.
The hot wall type heat treatment apparatus is composed of an inner tube that forms a processing chamber into which a wafer is loaded and an outer tube that surrounds the inner tube, and a process tube that is installed in a vertical shape. And a plurality of wafers are loaded into the inner tube from the bottom furnace port (boat loading) in a state where the plurality of wafers are long aligned and held by the boat, and the processing chamber is heated by the heater. Thus, the wafer is configured to be heat-treated.
In such a hot wall type heat treatment apparatus, a profile thermocouple or a cascade thermocouple (hereinafter referred to as a thermocouple) is arranged between the process tube and the boat, and the temperature near the wafer is measured. Based on the feedback control of the heater, the heat treatment is appropriately controlled.

In this temperature control method using a thermocouple, since the temperature near the wafer is measured, there is a problem that the measured temperature of the thermocouple differs from the actual temperature of the wafer. Due to the poor responsiveness of thermocouple temperature measurement at the time of temperature rise and fall, complicated correction of the controller and delay in temperature follow-up become problems.
Therefore, as a method of eliminating the difference between the actual temperature of the wafer and the measured temperature of the thermocouple, the thermoelectric surface is applied to the main surface of the temperature-measured member whose thermal characteristics are the same as or similar to those of the wafer and whose outer dimensions are smaller than the wafer. There has been proposed a method for measuring the actual temperature of a wafer loaded in a boat by bonding a pair of temperature measuring portions (thermal contacts) with an adhesive and placing the temperature measuring member in the vicinity of the boat. Yes. For example, see Patent Document 1.
JP 2004-6737 A

However, in the temperature measuring method for bonding the thermocouple's thermal contact to the main surface of the temperature-measuring member, the main surface of the temperature-measuring member has a flat shape, and therefore has the following problems: Revealed by the inventor.
1) When bonding the thermocouple's hot contact to the member to be measured, the thermocouple's hot contact cannot be accurately positioned, resulting in individual differences in performance such as thermocouple response.
2) When bonding the thermocouple's hot junction to the temperature-measuring member, individual differences occur in the application range and amount of the adhesive material, resulting in individual differences in thermocouple responsiveness and other performance.
3) Since it is necessary to firmly bond the thermocouple's hot contact to the temperature-measuring member, applying a large amount of adhesive to the main surface of the temperature-measuring member increases the heat capacity of the thermocouple's hot contact, which The response of the pair is reduced.

  The object of the present invention is to solve these problems of the prior art, the heat capacity is small and the responsiveness is good, the individual differences in performance are small, and the current actual temperature of the workpiece is responsive. An object of the present invention is to provide a substrate processing apparatus capable of appropriately performing a heat treatment by measuring well.

Typical means for solving the above-described problems are as follows.
(1) It has a processing chamber for processing a substrate, a heating means for heating the processing chamber, and a temperature detector provided with a temperature-measuring member at a thermal contact for detecting a temperature for controlling the heating means. A substrate processing apparatus,
A substrate processing apparatus, wherein a groove is formed in the temperature measuring member, and the thermal contact is fixed to the groove.
(2) The thermal contact and the temperature-measuring member are surrounded by a quartz protective tube, and the thermal contact and the groove portion of the temperature-measuring member are installed so that at least a part thereof is in contact with each other, The substrate processing apparatus according to (1), wherein the groove is filled with an adhesive.

  According to the above (1), the heat capacity can be reduced while maintaining the surface area of the temperature-measuring member, so that the temperature measurement characteristics of the temperature detector can be improved, and individual differences (quality and reliability) Variation).

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  In the present embodiment, as shown in FIG. 1, the substrate processing apparatus according to the present invention is a hot wall type heat treatment apparatus (batch type vertical hot wall type heat treatment apparatus) for performing a heat treatment step in an IC manufacturing method. 10.

A hot wall heat treatment apparatus 10 shown in FIG. 1 includes a vertical process tube 11 that is vertically arranged so that its center line is vertical and is fixedly supported. The process tube 11 includes an inner tube 12 and an outer tube 13. The inner tube 12 is made of quartz glass or silicon carbide (SiC) and is integrally formed into a cylindrical shape, and the outer tube 13 is made of quartz glass. Are integrally formed in a cylindrical shape.
The inner tube 12 is formed in a cylindrical shape with both upper and lower ends opened, and the cylindrical hollow portion of the inner tube 12 forms a processing chamber 14 into which a plurality of wafers held in a long alignment state by a boat are carried. Yes. The lower end opening of the inner tube 12 constitutes a furnace port 15 for taking in and out the wafer. Therefore, the inner diameter of the inner tube 12 is set to be larger than the maximum outer diameter (for example, 300 mm) of the wafer to be handled.

The outer tube 13 is formed in a cylindrical shape whose inner diameter is larger than the outer diameter of the inner tube 12 and whose upper end is closed and whose lower end is opened, and the inner tube 12 is covered with a concentric circle so as to surround the outer side.
A lower end portion between the inner tube 12 and the outer tube 13 is hermetically sealed by a manifold 16 constructed in a multistage cylindrical shape. The manifold 16 is detachably attached to the inner tube 12 and the outer tube 13 in order to replace the inner tube 12 and the outer tube 13, for example. Since the manifold 16 is supported by the housing 2 of the hot wall heat treatment apparatus, the process tube 11 is vertically installed.

  An exhaust pipe 17 is connected to the upper portion of the side wall of the manifold 16, and the exhaust pipe 17 is connected to an exhaust device (not shown) so as to exhaust the inside of the process tube 11. The exhaust pipe 17 is in a state of communicating with a gap formed between the inner tube 12 and the outer tube 13, and the exhaust passage 18 has a cross-sectional shape having a constant width by the gap between the inner tube 12 and the outer tube 13. It is configured in a circular ring shape. Since the exhaust pipe 17 is connected to the manifold 16, the exhaust pipe 17 is formed in a cylindrical hollow body and is disposed at the lowermost end portion of the exhaust passage 18 extending vertically.

  A gas introduction pipe 19 is connected to the lower part of the side wall of the manifold 16 so as to communicate with the furnace port 15 of the inner tube 12. The gas introduction pipe 19 is connected to a raw material gas supply device, a carrier gas supply device, and a purge gas supply. Devices (both not shown) are connected. The gas introduced into the furnace port 15 by the gas introduction pipe 19 flows through the processing chamber 14 of the inner tube 12, passes through the exhaust path 18, and is exhausted to the outside by the exhaust pipe 17.

  A seal cap 20 that closes the lower end opening is brought into contact with the manifold 16 from the lower side in the vertical direction. The seal cap 20 is constructed in a disk shape substantially equal to the outer diameter of the manifold 16, and is configured to be vertically moved by a boat elevator (not shown) vertically installed outside the process tube 11. Yes. On the center line of the seal cap 20, the boat 21 is vertically supported and supported.

The boat 21 includes a pair of end plates 22 and 23 at the top and bottom, and three holding members 24 that are installed between the end plates 22 and 23 and arranged vertically. A plurality of holding grooves 25 are arranged at equal intervals in the longitudinal direction so as to be opened facing each other. The boat 21 inserts the peripheral portions of the wafers 1 between the holding grooves 25 of the three holding members 24 so as to hold the plurality of wafers 1 in a state of being aligned horizontally and centered with each other. It has become.
Between the boat 21 and the seal cap 20, a heat insulating cap portion 26 in which a heat insulating material (not shown) is sealed is disposed. The heat insulating cap portion 26 is configured to support the boat 21 in a state where it is lifted from the upper surface of the seal cap 20, thereby separating the lower end of the boat 21 from the furnace port 15 by an appropriate distance.

As shown in FIG. 1, the outside of the process tube 11 is entirely covered with a heat insulating tank 31, and a heater 32 as a heating means for heating the inside of the process tube 11 is provided inside the heat insulating tank 31. The outer tube 13 is concentrically provided so as to surround the periphery. The heat insulating tank 31 is made of a thin plate made of stainless steel or the like and is covered with a heat insulating material such as glass wool inside a cover formed in a cylindrical shape, and has a cylindrical shape having a diameter larger than the outer diameter of the process tube 11 and the same length. And is installed vertically by being supported by the case 2 of the hot wall heat treatment apparatus.
The heater 32 is formed of a linear electric resistor such as a nichrome wire, and is wound spirally around the inner peripheral surface of the heat insulating tank 31. The heater 32 is divided into a first heater part 32a, a second heater part 32b, a third heater part 32c, a fourth heater part 32d, and a fifth heater part 32e in order from the upper side, and these heater parts 32a to 32e are divided into five parts. The temperature controller 33 is configured to perform sequence control in cooperation with each other and independently.

As shown in FIG. 1, a protective tube 34 is vertically penetrated and fixed at one place on the outer peripheral portion of the seal cap 20 so as not to interfere with the boat 21. When the boat 21 is carried into the processing chamber 14, the protective tube 34 is positioned between the inner peripheral surface of the inner tube 12 and the outer peripheral surface of the boat 21.
Thermocouples 35a, 35b, 35c, 35d and 35e as five temperature detectors are collected and enclosed in the protective tube 34. The five thermocouples 35a, 35b, 35c, 35d, and 35e are connected to the temperature controller 33, and the thermocouples 35a to 35e transmit temperature measurement results to the temperature controller 33, respectively.
The temperature controller 33 feedback-controls each heater part 32a-32e based on the measured temperature from each thermocouple 35a-35e. That is, the temperature controller 33 obtains an error between the target temperature of each of the heater units 32a to 32e and the measured temperature of each of the thermocouples 35a to 35e, and if there is an error, executes a feedback control for eliminating the error. ing.

The heights of the thermal contacts 36a to 36e, which are temperature measuring points of the five thermocouples 35a to 35e, are set so as to correspond to the heights of the five heater portions 32a to 32e, respectively. Five temperature measuring members 40a to 40e are fixed to the five thermal contact points 36a to 36e, respectively. The five temperature-measured members 40a to 40e are examples of semiconductors or non-conductors (insulators), and silicon, which is a material having the same or similar thermal characteristics as the wafer, is used, and the vertical and horizontal thicknesses are 3 mm × 6 mm × 0. .35 mm.
By the way, the thinner the temperature-measuring member, the larger the heat receiving area and the smaller the heat capacity, so it is desirable to set the temperature-measuring member as thin as possible.
However, if the thickness of the measured temperature member is set too thin, there is a risk that the measured temperature member may be damaged when bonding the hot contact point described later or when inserting the measured temperature member into the protective tube. The thickness of the member to be measured cannot be set too thin.
Therefore, in the present embodiment, in order to ensure mechanical strength that can avoid fear of breakage while securing a small heat capacity with a large heat receiving area, the thickness t (FIG. 3) is set to 0.35 mm, which is sufficiently thinner than the wafer thickness (for example, 0.725 mm).

Here, the relationship between the thermocouple and the temperature-measuring member and the fixed structure will be described mainly using FIGS. 2 and 3 with the thermocouple 35a corresponding to the uppermost heater section 32a as a representative.
As shown in FIG. 1, the receiver 37a of the thermocouple 35a is disposed outside the protective tube 34, and the receiver 37a has an electrical wiring for transmitting the temperature measurement result of the thermocouple 35a to the temperature controller 33. 38a is connected.
As shown in FIGS. 1 and 2, a temperature-measured member 40a fixed to the thermal contact 36a of the thermocouple 35a is disposed at a position facing the heater portion 32a inside the protective tube 34. .
In the present embodiment, platinum wires and platinum / rhodium wires are used as the thermocouple wires of the thermocouple 35a. As shown in FIG. 2, the pair of thermocouple wires of the thermocouple 35a are prevented from being short-circuited by a plurality of insulators 39 (only three are shown in FIG. 2). Laid in a state. Incidentally, the insulator 39 is made of an insulating material having heat resistance such as alumina.
By the way, when heat treatment is performed at a low temperature (about 300 ° C. or less), a silicon wafer has a low emissivity, and radiant heat is hardly absorbed. On the other hand, alumina has a higher emissivity than silicon and easily absorbs radiant heat. Therefore, in the case of a low-temperature process (about 300 ° C. or lower), it is preferable that the insulator 39 is made of a material mainly composed of silicon in order to match the thermal characteristics of the wafer. Thereby, the temperature measured by the thermocouple can be measured so as to be closer to the temperature characteristic of the wafer even under the influence of heat from the insulator 39.

As shown in FIG. 2, the boat 21 side that is opposite to the surface of the temperature-measuring member 40 a that is disposed at a position facing the heater portion 32 a in the protective tube 34 and that faces the heater portion 32 a. A groove 41a having a depth d (see FIG. 3) of 0.15 mm is buried in the center of the surface.
As shown in FIG. 3A, the groove portion 41a is formed in a substantially keyhole shape in which the upper half is circular and the lower half is rectangular. As shown in FIG. 3B, in the circular hole portion of the groove portion 41a, the thermal contact 36a of the thermocouple 35a is disposed so as to be partially in contact with the member to be measured 40a, and in the rectangular hole portion, Is wired at the upper end of a pair of thermocouple wires. The groove 41a is filled with an adhesive mainly composed of a heat-resistant ceramic such as alumina to form an adhesive layer 42a. The heat contact 36a of the thermocouple 35a and the pair of thermocouple wires The upper end is bonded to the bottom surface of the groove 41a by an adhesive layer 42a and fixed to the temperature-measured member 40a.
By the way, when heat treatment is performed at a low temperature (about 300 ° C. or less), a silicon wafer has a low emissivity, and radiant heat is hardly absorbed. On the other hand, alumina has a higher emissivity than silicon and easily absorbs radiant heat. Therefore, in the case of a low-temperature process (about 300 ° C. or lower), it is preferable to use an adhesive as a main component of silicon in order to match the thermal characteristics of the wafer. Thereby, the temperature measured by the thermocouple can be measured so as to be closer to the temperature characteristic of the wafer even under the influence of heat from the adhesive layer 42a. Furthermore, if the temperature is high (about 350 ° C. or higher), the adhesive composed mainly of silicon weakens and peels off, but if the temperature is low, the adhesive composed mainly of silicon can be used. It can be held without changing the adhesive force.

  Next, a heat treatment process of the IC manufacturing method when the hot wall heat treatment apparatus according to the above configuration is used will be described.

  As shown in FIG. 1, a boat 21 in which a plurality of wafers 1 are aligned and held is placed on a seal cap 20 in a state in which the direction in which the group of wafers 1 is arranged is vertical, and is lifted by a boat elevator. Then, it is carried into the processing chamber 14 from the furnace port 15 of the inner tube 12 (boat loading) and remains in the processing chamber 14 while being supported by the seal cap 20.

The inside of the process tube 11 is exhausted by the exhaust pipe 17, and the inside of the process tube 11 is heated to the target temperature (for example, 100 to 1200 ° C.) of sequence control of the temperature controller 33 by the heater portions 32 a to 32 e of the heater 32. Is done.
At this time, the error between the actual temperature rise inside the process tube 11 due to the heating of the heater portions 32a to 32e of the heater 32 and the target temperature of the sequence control of each heater portion 32a to 32e is the thermocouple 35a to 35e. Each is corrected by feedback control based on the temperature measurement result.

Here, in the present embodiment, the temperature characteristics of the measured members 40 a to 40 e are the same as or similar to those of the wafer 1, so that the temperature of the measured members 40 a to 40 e changes with the temperature of the wafer 1. Follow with good responsiveness.
On the other hand, since the thermal contacts 36a to 36e of the thermocouples 35a to 35e are fixed to the temperature-measured members 40a to 40e, the thermocouples 35a to 35e are good for temperature changes of the temperature-measured members 40a to 40e. Follow with responsiveness.
Therefore, the thermocouples 35a to 35e follow the temperature change of each of the temperature measuring members 40a to 40e with good responsiveness, thereby measuring the temperature change of the wafer 1 with good responsiveness. . That is, the temperature controller 33 that feedback-controls the heater units 32a to 32e based on the temperature measurement results of the thermocouples 35a to 35e makes the heater units 32a to 32e good based on the current actual temperature of the wafer 1. Feedback control is performed with responsiveness.

  When the entire processing chamber 14 is stabilized at the preset processing temperature by the above temperature control, the processing gas is introduced into the processing chamber 14 from the gas introduction pipe 19. The processing gas introduced into the processing chamber 14 moves up the processing chamber 14, then flows into the exhaust path 18 from the upper end opening of the inner tube 12, and is exhausted from the exhaust pipe 17 through the exhaust path 18. As the processing gas flows through the processing chamber 14, the surface of the wafer 1 is heat-treated by contacting the group of wafers 1.

When the heat treatment is performed on the group of wafers 1 and a heat treatment time set in advance elapses, the heating action of the heater portions 32a to 32e of the heater 32 is stopped by the sequence control of the temperature controller 33, and the temperature inside the process tube 11 is increased. Is lowered to a preset standby temperature (for example, a temperature lower by 50 ° C. to 300 ° C. than the processing temperature).
Even in this case, the error between the actual temperature drop inside the process tube 11 by the heater portions 32a to 32e and the target temperature of the sequence control of each heater portion 32a to 32e is the temperature measurement of each thermocouple 35a to 35e. Each is corrected by feedback control based on the result. Also here, since each thermocouple 35a-35e measures the temperature change of the wafer 1 with good responsiveness, the temperature controller 33 makes each heater part 32a-32e good based on the current actual temperature of the wafer 1. Feedback control with responsiveness.

  When a preset standby temperature is reached or when a preset temperature drop time elapses, the seal cap 20 is lowered to open the furnace port 15 and the wafer group 1 is held in the boat 21. In this state, it is unloaded from the furnace port 15 to the outside of the process tube 11 (boat unloading).

  By repeating the above operation, the heat treatment by the hot wall heat treatment apparatus is batch-processed on the wafer 1.

  According to the embodiment, the following effects can be obtained.

1) The thermocouple can measure the temperature of the wafer with good responsiveness to the temperature change of the wafer by fixing the thermal contact of the thermocouple to the temperature-measured member whose thermal characteristics are equal to or similar to that of the wafer. Therefore, the temperature controller that feedback-controls the heater based on the temperature measurement result of the thermocouple can feedback-control the heater with good responsiveness based on the current actual temperature of the wafer. The apparatus can properly perform the heat treatment.

2) The thermocouple can be accurately positioned by placing the thermocouple's hot contact in the groove part that is submerged in the fixed surface of the temperature-measuring member, filling the groove part with adhesive, and bonding it. It is possible to prevent individual differences from occurring in the responsiveness.

3) It is possible to make the application range and the application amount of the adhesive constant by arranging the thermocouple's hot contact in the groove part sunk in the fixed surface of the measured temperature member and filling the groove part with adhesive. Therefore, it is possible to prevent individual differences in performance from occurring in the response of the thermocouple.
For example, when the adhesive becomes thicker than the temperature-measured member from the groove due to surface tension or the like, the thickness of the protruding portion when the adhesive is applied can be easily set to be 1 mm or less. It is possible to prevent individual differences in thermocouple response performance from occurring.

4) By placing the thermocouple's hot contact in the groove part sunk in the fixed surface of the temperature measurement member and filling the groove part with adhesive, it is possible to bond the hot contact so that it is filled with adhesive. Therefore, the thermocouple can be firmly bonded to the member to be measured even with a small amount of adhesive, and the amount of the adhesive used can be made appropriate and waste can be reduced.
And by reducing the usage-amount of an adhesive material, since the heat capacity in the to-be-measured member and the part of a hot junction can be reduced, the responsiveness of a thermocouple can be made quick.

5) By forming the groove in the temperature-measuring member, the heat capacity can be reduced while maintaining the surface area of the temperature-measuring member, so that the responsiveness of the thermocouple can be increased.

  FIG. 4 is a front sectional view showing a single wafer hot wall heat treatment apparatus according to a second embodiment of the present invention, and FIG. 5 is a plan sectional view.

  In the present embodiment, the substrate processing apparatus according to the present invention is configured as a single wafer type hot wall heat treatment apparatus for performing a heat treatment step in an IC manufacturing method.

As shown in FIGS. 4 and 5, the single wafer type hot wall heat treatment apparatus 50 includes a process tube 51 that includes a processing chamber 52 that can accommodate the wafer 1 and is rectangular in plan view. 51 is formed in a rectangular parallelepiped shape using quartz glass or silicon carbide, and is horizontally supported by a housing (not shown).
A pair of side walls facing each other among the four side walls of the process tube 51 are opened, and a furnace port flange 53 and a furnace end flange 54 are fixed to both openings. The furnace port flange 53 is provided with a furnace port 55 for carrying the wafer 1 in and out of the processing chamber 52, and the furnace port 55 is opened and closed by a gate valve 56.
A gas inlet pipe 57 for introducing processing gas is connected to the furnace port flange 53 so as to communicate with the furnace port 55, and an exhaust pipe 58 for exhausting the processing chamber 52 is connected to the furnace end flange 54. ing. The furnace end flange 54 is closed by a cap 54a. That is, the processing gas supplied from the gas introduction pipe 57 flows through the processing chamber 52 and is exhausted by the exhaust pipe 58.
A wafer table 59 is mounted on the bottom surface of the processing chamber 52, and the wafer table 59 is configured to hold the wafers 1 one by one horizontally.

  A heater 60 is laid outside the process tube 51 so as to heat the processing chamber 52 uniformly or with a predetermined temperature distribution. The heater 60 is subjected to sequence control and feedback control by a temperature controller 61.

  As shown in FIG. 5, three protective tubes 62a, 62b, and 62c are arranged adjacent to each other on the horizontal plane on the cap 54a of the furnace end flange 54 and are respectively inserted and fixed in the horizontal direction. The insertion-side tip portions of the three protective tubes 62a, 62b, and 62c are positioned at three locations on the periphery of the wafer 1 just below the wafer 1 held on the wafer mounting table 59, respectively. Two thermocouples 63a and 63b are respectively sealed in the protective tubes 62a and 62b at both ends, and three thermocouples 63c, 63d and 63e are collectively sealed in the central protective tube 62c. Yes.

The five thermocouples 63a, 63b, 63c, 63d, and 63e are connected to the temperature controller 61, and the thermocouples 63a, 63b, 63c, 63d, and 63e transmit temperature measurement results to the temperature controller 61, respectively. It has become.
The temperature controller 61 performs feedback control of the heater 60 based on the measured temperatures from the thermocouples 63a, 63b, 63c, 63d, and 63e. That is, the temperature controller 61 obtains an error between the target temperature of the heater 60 and the measured temperature of each thermocouple 63a, 63b, 63c, 63d, 63e, and executes feedback control for eliminating the error if there is an error. It has become.

As shown in FIG. 5, five temperature-measured members 65a, 65b, 65c, 65d, and 65e are provided on the three protective tubes 62a, 62b, and 62c, starting from the center of the wafer 1 and the center thereof. They are arranged so as to face the four intersections in the peripheral part of the cross-shaped wafer 1. Five thermocouples 63a, 63b, 63c, 63d, 63e have thermal contact points 64a, 64b, 64c, 64d, 64e fixed to the five measured members 65a, 65b, 65c, 65d, 65e, respectively.
Since the relationship between the thermocouple and the member to be measured and the fixing structure are the same as those in the above embodiment, detailed description thereof will be omitted.

  Next, the heat treatment process of the IC manufacturing method according to an embodiment of the present invention when the single wafer type hot wall heat treatment apparatus according to the above configuration is used will be described.

  The wafer 1 to be processed is handled by a wafer transfer device (not shown) and is carried into the processing chamber 52 from the furnace port 55. As shown in FIGS. Placed on top.

After the furnace port 55 is closed by the gate valve 56, the processing chamber 52 is exhausted by the exhaust pipe 58 and heated by the heater 60 to a target temperature (for example, 600 to 1200 ° C.) for sequence control of the temperature controller 61. .
At this time, the error between the actual temperature rise in the processing chamber 52 due to the heating of the heater 60 and the target temperature for the sequence control of the heater 60 is based on the temperature measurement results of the thermocouples 63a, 63b, 63c, 63d, 63e. Each is corrected by feedback control.

Also in the present embodiment, since the thermal characteristics of the temperature measuring members 65a to 65e are equal to or approximate to those of the wafer 1, the temperatures of the temperature measuring members 65a to 65e are good for the temperature change of the wafer 1. Follow with a good response.
On the other hand, since the thermal contacts 63a to 64e of the thermocouples 63a to 63e are fixed to the temperature measuring members 65a to 65e, the thermocouples 63a to 63e are excellent in temperature changes of the temperature measuring members 65a to 65e. Measure with high responsiveness.
Accordingly, the thermocouples 63a to 63e follow the temperature changes of the temperature measuring members 65a to 65e with good responsiveness, thereby measuring the temperature changes of the wafer 1 with good responsiveness. . That is, the temperature controller 61 that feedback-controls the heater 60 based on the temperature measurement results of the thermocouples 63 a to 63 e performs feedback control of the heater 60 with good responsiveness based on the current actual temperature of the wafer 1. Become.

  Similarly to the above-described embodiment, the surface on the opposite side to the fixed surface of each of the thermal contacts 64a to 64e is attached facing the heater 60 inside each of the protective tubes 62a, 62b, 62c. Thus, each of the temperature-measured members 65a to 65e can receive the radiant heat of the heater 60 at a right angle, and can follow the temperature change of the wafer 1 with good responsiveness.

  When the entire processing chamber 52 is stabilized at the preset processing temperature by the above temperature control, the processing gas is introduced into the processing chamber 52 from the gas introduction pipe 57. The processing gas introduced into the processing chamber 52 is exhausted from the exhaust pipe 58 after flowing down the processing chamber 52. As the processing gas flows through the processing chamber 52, the surface of the wafer 1 is subjected to heat treatment by contacting the group of wafers 1.

  When the heat treatment is performed on the group of wafers and a preset heat treatment time elapses, the heating action of the heater 60 is stopped by the sequence control of the temperature controller 61, and the temperature of the processing chamber 52 is set to a preset standby temperature (for example, The temperature is lowered to 150 to 300 ° C. lower than the processing temperature.

  When a preset standby temperature is reached or a preset temperature drop time elapses, the furnace port 55 is opened by the gate valve 56, and the wafer 1 is picked up from the wafer table 59 by the wafer transfer device and processed in the processing chamber. 52 to the outside.

  By repeating the above operation, the heat treatment by the single-wafer hot wall heat treatment apparatus 50 is performed on the wafer 1 by single wafer processing. The effect in the present embodiment is the same as that in the previous embodiment.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

For example, the thermocouple is not limited to be disposed near the wafer in the processing chamber, but may be disposed between the inner tube and the outer tube or between the process tube and the heater.
Incidentally, the inner tube can be omitted.

  The thermocouple may be inserted into the heater through the heater.

  The protective tube for laying the thermocouple is not limited to being formed in a linear shape, but may be formed in an L shape or the like.

  The fixing means for the thermocouple thermal contact and the temperature-measuring member is not limited to the adhesion method, and a welding method may be used.

  The heat treatment is not limited to oxidation treatment, diffusion treatment, and diffusion, but is not limited to carrier activation after ion implantation and reflow and annealing treatment for planarization, and may be heat treatment such as film formation treatment.

  The workpiece is not limited to a wafer, but may be a photomask, a printed wiring board, a liquid crystal panel, an optical disk, a magnetic disk, or the like.

  The present invention is not limited to a batch type vertical hot wall type heat treatment apparatus and a single wafer type hot wall type heat treatment apparatus, but also includes general heat treatment apparatuses such as a batch type horizontal hot wall type heat treatment apparatus and vertical and horizontal hot wall type reduced pressure CVD apparatuses, and substrates. The present invention can be applied to all processing apparatuses.

It is front sectional drawing which shows the batch type vertical hot wall type heat processing apparatus which is one embodiment of this invention. It is detail drawing of the a section of FIG. The temperature-measuring member is shown, (a) is a perspective view before bonding a thermocouple, (b) is a perspective view after bonding a thermocouple. It is front sectional drawing which shows the single wafer type hot wall type heat processing apparatus which is 2nd embodiment of this invention. FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 2 ... Housing, 10 ... Hot wall type heat treatment apparatus (batch type vertical hot wall type heat treatment apparatus), 11 ... Process tube, 12 ... Inner tube, 13 ... Outer tube, 14 ... Processing chamber, DESCRIPTION OF SYMBOLS 15 ... Furnace port, 16 ... Manifold, 17 ... Exhaust pipe, 18 ... Exhaust path, 19 ... Gas introduction pipe, 20 ... Seal cap, 21 ... Boat, 22, 23 ... End plate, 24 ... Holding member, 25 ... Holding groove , 26 ... heat insulation cap part, 31 ... heat insulation tank, 32 ... heater, 32a to 32e ... heater part, 33 ... temperature controller, 34 ... protective tube, 35a to 35e ... thermocouple (temperature detector), 36a to 36e ... heat Contact point (temperature measuring unit), 37a ... receiver, 38a ... electrical wiring, 39 ... insulator, 40a-40e ... temperature measuring member, 41a ... groove, 42a ... adhesive layer, 50 ... single wafer hot water Shape heat treatment apparatus (heat treatment apparatus, semiconductor manufacturing), 51 ... process tube, 52 ... treatment chamber, 53 ... furnace port flange, 54 ... furnace end flange, 54a ... cap, 55 ... furnace port, 56 ... gate valve, 57 ... gas introduction Pipe 58, Exhaust pipe 59, Wafer table 60 Heater 61 Temperature controller 62a 62b 62c Protection pipe 63a-63e Thermocouple 64a-64e Thermal contact 65a-65e Covered Temperature measuring member.

Claims (1)

A substrate processing apparatus comprising: a processing chamber for processing a substrate; a heating unit for heating the processing chamber; and a temperature detector provided with a temperature measuring member at a thermal contact for detecting a temperature for controlling the heating unit. Because
A substrate processing apparatus, wherein a groove is formed in the temperature measuring member, and the thermal contact is fixed to the groove.

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