CN113506760A - Wafer temperature field reconstruction device with double-layer structure - Google Patents
Wafer temperature field reconstruction device with double-layer structure Download PDFInfo
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- CN113506760A CN113506760A CN202110675598.4A CN202110675598A CN113506760A CN 113506760 A CN113506760 A CN 113506760A CN 202110675598 A CN202110675598 A CN 202110675598A CN 113506760 A CN113506760 A CN 113506760A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
The invention provides a wafer temperature field reconstruction device with a double-layer structure, and relates to the technical field of semiconductor test equipment. The invention is mainly used for measuring the temperature distribution of wafers in various semiconductor process procedures, and comprises a front-end temperature measuring part, a back-end data receiving and transmitting part and a charging part. The front-end temperature measuring part is formed by attaching two processed wafers and a circuit in an assembling mode, and can adapt to various different semiconductor processes. The back-end data receiving, transmitting and charging device realizes good electric contact with the wafer by a simple mechanical structure. The invention has the advantages of simple structure, compatibility with the process, accurate measurement, low cost and higher commercial value.
Description
Technical Field
The invention relates to the technical field of semiconductor test equipment, and discloses a wafer temperature field reconstruction device with a double-layer structure.
Background
In the semiconductor chip manufacturing process, the temperature uniformity requirement of the wafer surface is high, and the temperature measurement and control are very important. For example, plasma etching, which is one of the key processes, generally requires precise measurement and strict control of the temperature of the wafer in order to improve the uniformity of the etching rate and temperature distribution, while avoiding wafer defects caused by the deposition of contaminants onto the wafer. In chemical vapor deposition, the temperature of the wafer will have a large impact on the deposition quality of the film. During rapid thermal processing, uniformity of wafer temperature is a major obstacle to expanding its application range.
The current wafer temperature detection technology mainly focuses on optical and contact temperature sensors. Patent CN203826348U describes a method for monitoring the temperature of a wafer by using an optical temperature sensor. The optical measurement method can only measure the temperature of a certain point of the wafer, and meanwhile, the complicated environment inside the actual processing chamber has a great influence on the precision of the optical measurement. Patent US6190040B1 describes an in-situ wire-type wafer temperature measuring device comprising a temperature sensor, connecting leads, lead fasteners, vacuum pass-through bands, interfaces, etc. Each sensor is connected by a corresponding lead and is pressed against the wafer at one end of the wafer by a metal fixture. The method has more problems, such as damage to the temperature field on the surface of the wafer; not usable in processing environments that utilize radiant heating; electromagnetic interference, etc. also need to be considered in the plasma process. Based on this, KLA corporation has proposed a real-time process management tool that can solve these problems more effectively by embedding temperature sensors and processing circuitry within the wafer interior, but this approach can only be used for one of backside or surface heating, which is more complex and costly.
Therefore, there is a need for an apparatus that is compatible with most processes, is suitable for use in both back and surface heating processes, and in complex environments such as plasma, vapor deposition, etc., and is simple to manufacture to reduce cost.
Disclosure of Invention
Based on the technical scheme, the invention aims to solve the problems that the detection tool is not compatible with various existing processes, the manufacturing process is complex, and the cost is high.
The invention provides a wafer temperature field reconstruction device with a double-layer structure, which comprises: temperature measuring device, data transceiver, data processing apparatus, temperature measuring device includes: a lower wafer, an intermediate circuit layer and an upper wafer; the intermediate circuit layer includes: the temperature sensor is arranged on the PCB, and the temperature sensor is arranged on the PCB; a groove for placing a thin film battery is etched in the center of the lower layer wafer, and a heat insulating material is arranged between the thin film battery and the lower layer wafer; a through hole for placing a circuit on the PCB is etched in the center of the upper layer wafer, and a heat insulating material is attached to the side wall of the through hole; grooves for placing temperature sensors are formed in the center positions of the lower layer wafer and the upper layer wafer; the data line of the temperature sensor is a lead wire deposited on the surface of the lower layer wafer and the upper layer wafer, the lead wires are connected with welding points on a PCB (printed Circuit Board), the PCB is positioned at the central position between the upper layer wafer and the lower layer wafer, the peripheries of the central positions of the upper layer wafer and the lower layer wafer are bonded through high temperature resistant glue, and the temperature sensor of the upper layer wafer and the temperature sensor of the lower layer wafer are fixed at the same time; the thin film battery is connected with the PCB, and the PCB is also packaged with an electrode which extends out of the central through hole of the upper wafer; a detachable silicon cover is additionally arranged and used for protecting the electrode in actual working conditions.
The data transceiver comprises a base and an upper cover plate, wherein a wafer groove for placing a wafer is arranged on the base, an electrode groove for connecting an electrode is arranged at the central position of the bottom of the groove, a contact electrode is arranged in the electrode groove, and the position of the contact electrode corresponds to the position of the electrode of the temperature measuring device; the upper cover plate is provided with a bulge matched with the groove of the base and used for pressing the wafer placed in the wafer groove; the data transceiver realizes the charge and discharge and data exchange of the temperature measuring device through the contact electrode.
And the data processing device receives data from the data transceiver and is used for reconstructing the wafer temperature field.
Furthermore, two circles of temperature sensor grooves are correspondingly arranged on the lower layer wafer and the upper layer wafer, each circle is 8, the interval between every two adjacent temperature sensor grooves is 45 degrees, and the inner circle temperature sensor groove, the outer circle temperature sensor groove adjacent to the inner circle temperature sensor groove and the center of the wafer circle are positioned on the same straight line.
Further, be provided with the data connection module in the electrode recess of base among the data transceiver, this data connection module includes: the insulating support is in a square bowl shape and is reversely buckled on the control circuit, a plurality of rod-shaped contact electrodes are arranged at the top of the insulating support in a penetrating mode, a spring barrier sheet is arranged in the middle of each contact electrode, and a contact sheet is arranged at the top of each contact electrode; the control circuit, the spring and the insulating support are all positioned in the shell, the contact electrode penetrates through the shell and the insulating support from the top, the contact piece is positioned outside the shell, and the spring barrier piece is positioned between the shell and the insulating support; when the electrode contacts the contact piece, the spring is compressed, so that the contact is more reliable; the contact electrode is positioned at the top end in the insulating bracket and is connected with the control circuit through a lead.
Furthermore, the depth of a groove of the temperature sensor formed on the lower layer wafer and the upper layer wafer is 0.2mm, and the thickness of the groove of the temperature sensor from the other side of the wafer is 0.4 mm; the width of the lead for connecting the temperature sensor and the PCB is not more than 0.7mm, and the thickness of the lead is 0.05 mm; the bottom of the groove for placing the thin film battery in the center of the lower layer wafer is 0.1mm away from the other side of the wafer.
After the technical scheme is adopted, the invention has the following positive effects:
(1) compared with the prior art, the method has high measurement precision and can be used in severe environments such as plasma etching, chemical vapor deposition and the like.
(2) The invention can be applied to semiconductor processing equipment with surface and back heating by arranging the two layers of temperature sensors.
(3) The invention connects two layers of wafers through simple bonding, and has simple manufacturing process and low cost.
(4) The invention provides a subsequent matching product, which can simply and effectively realize data transmission and subsequent data processing of the device.
Drawings
FIG. 1 is a view showing the entire configuration of the front end of the apparatus of the present invention.
FIG. 2 is a top view of the front end of the inventive apparatus with the silicon cap removed.
Fig. 3 is an anatomical view of the side of the front end device.
FIG. 4 is a flow chart of the main manufacturing process of the front-end device of the present invention.
Fig. 5 is a circuit configuration diagram of the middle of the front-end device.
Fig. 6 shows a back end data collection and charging device in cooperation with a front end device, both devices forming a complete system.
Fig. 7 shows a specific structure of a data collection and charging device base.
Further, reference numerals in the drawings are explained as follows:
1-upper wafer; 2-a conductor formed by deposition; 3-temperature sensor; 4-intermediate circuit layer; 5-lower layer wafer; 6-high temperature resistant glue; 7-heat insulation material; 8-deposited wire, equivalent to 2; 9-electronic components on the PCB; 10-thin film battery; 11-welding point; 12-electrodes; 13-contact electrode, equivalent to 12; 14-a spring; 15-a control circuit; 16-conducting wire; 17-insulating support; 18-upper cover plate; 19-base; 20-electrode; 21-silicon cap.
Detailed Description
The present invention mainly includes a device composed of front end temperature measurement, back end data transceiving and charging, and in order to better express the technical scheme of the present invention, the following description will specifically refer to the preferred embodiments and further explain the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic diagram illustrating an overall structure of a front end of a wafer temperature field reconstruction device with a double-layer structure according to an embodiment of the present invention, fig. 2 is a top view illustrating a front end of the wafer temperature field reconstruction device with a silicon cover removed, according to a preferred embodiment of the present invention, fig. 3 is a front end side view illustrating a wafer temperature field reconstruction device with a double-layer structure according to a preferred embodiment of the present invention, fig. 4 is a front end device manufacturing process according to a preferred embodiment of the present invention, and for better describing the connection, structure, shape, material and the like of each component in the front end device in detail, the main structure of the front end device of the present invention will be further described below with reference to fig. 1, fig. 2, fig. 3 and fig. 4.
Specifically, the front-end device structure of the present invention can be divided into three layers, which are an upper wafer 1, an intermediate circuit 4 and a lower wafer 5. The wafer may be a real wafer of any size used in the current stage of integrated circuit manufacturing, and preferably the wafer size is 6 inches or more, taking into account the stability of the overall device. Further, a plurality of temperature sensors are electrically connected to the silicon wafer, and in the illustration of the present invention, it is preferable to provide 16 temperature sensors, and those skilled in the art will understand that the number of temperature sensors can be changed according to the actual measurement requirement. The electrical connection is achieved by depositing metal wires on the wafer, each metal wire preferably having a width of no more than 0.7mm and a thickness of 0.05mm, and further being coated with a thermally insulating material.
The lower layer wafer is etched to form two types of shallow grooves, the first type of shallow groove is used for placing a temperature sensor, the temperature sensor is tightly attached to the bottom of the shallow groove through certain pressure and fixed through surrounding adhesive, and the distance between the bottom of the shallow groove and the bottom of the wafer is 0.4 mm. The second type of shallow trench is used for placing the thin film cell, the bottom of the shallow trench is coated with a heat insulating material, and the distance from the bottom of the shallow trench to the bottom of the wafer is 0.2 mm. The upper layer wafer is etched with a first type of shallow trench symmetrical to the lower layer wafer for placing a temperature sensor, and a position corresponding to the thin film battery is cut into a size of 2 x 2cm2And the size rectangle is used for placing the electronic components.
The substrate of the intermediate circuit is preferably a flexible PCB, the thickness of the substrate is preferably less than 0.2mm, and the material of the flexible PCB is Polyimide (PI). The thickness of the intermediate circuit can be optimized by selecting the flexible PCB, the thin film battery and the ultrathin packaged electronic component are further combined, and the total thickness of the intermediate circuit layer is not more than 1.5 mm.
The front-end device of the invention forms a final structure through assembly, and the specific process is as follows:
step 1: preparing two silicon wafers with basically the same size and property, etching corresponding shallow trenches on the two silicon wafers in an etching mode, and cutting off the corresponding silicon wafers in a cutting mode. Preferably, the bottom of the trench for sensor placement is 0.4mm from the bottom of the wafer, and the bottom of the trench for thin film cell placement is 0.2mm from the bottom of the wafer.
Step 2: the heat insulating material 7 is coated at the corresponding position, the material is preferably polytetrafluoroethylene resin, and further, the thickness of the heat insulating material is not more than 0.1 mm.
And step 3: a metallic conductive substance 2, preferably copper, is deposited on the insulating material.
And 4, step 4: the temperature sensors 3 are mounted in corresponding grooves and their electrical connection may be by soldering or by means of an electrically conductive adhesive, here preferably silver epoxy glue. Further, the temperature sensor may be a thermocouple or a thermal resistor, and further, the temperature sensor 3 is fixed by a glue.
And 5: welding required electronic components and thin film batteries on the circuit board, melting excessive welding materials on corresponding welding points on one side close to the thin film batteries, aligning the lower layer of wafer, and extruding and attaching. At this time, the lower layer wafer is positioned on the upper layer, namely, the front surface is attached. The solder material may be a solder used in general circuit soldering.
Step 6: and (5) coating a high-temperature-resistant adhesive material 6 on the lower layer wafer, and then adhering the upper layer wafer with the circuit board and the lower layer wafer through the step 5. Preferably, the high-temperature resistant adhesive material is epoxy resin.
And 7: removing the excess resin extruded from the middle of the two wafers, covering a detachable silicon cover with the same property as the upper wafer on the protruding circuit part, and completing the manufacture of the device.
The silicon cover can effectively protect electronic components and isolate relevant electromagnetic interference.
The middle circuit layer is composed of a PCB circuit substrate, a thin film battery and corresponding electronic components.
Fig. 5 shows a specific structure of the intermediate circuit layer in the wafer temperature field reconstruction front-end device with the double-layer structure according to the preferred embodiment of the invention. The electronic components mainly comprise a voltage amplifier, a digital-to-analog converter ADC, a central processing unit CPU, a RAM, a storage module FLASH and a communication module, wherein the digital-to-analog converter ADC, the central processing unit, the RAM and the communication module can adopt the existing microprocessor unit such as stm32f103 series. The communication module can adopt serial port communication to reduce the pin number, and preferably adopts a uart communication mode. The thin film battery adopts an all-solid-state thin film lithium battery, preferably Li/LiPON/LiCoO2The output power of the all-solid-state thin-film lithium battery can meet the energy requirements of all active devices on the board. And a heat insulating material and an air barrier are arranged between the intermediate circuit layer and the wafer, so that the heat transferred by the wafer can be effectively reduced, and the working temperature of the circuit is improved.
Fig. 6 is a schematic diagram of a wafer temperature field reconstruction backend device with a double-layer structure according to a preferred embodiment of the present invention. The rear end device is mainly used as a transfer station for the communication and charging between the front end device and an upper computer PC, and mainly comprises an upper cover plate 18 and a base 19. Fig. 7 is a detailed block diagram of the pedestal in the wafer temperature field reconstruction backend apparatus with a double-layer structure according to the preferred embodiment of the present invention. To better illustrate the specific structure of the backend device, further description is made with reference to fig. 6 and 7.
Furthermore, the upper cover plate is provided with a bulge with a diameter slightly larger than that of the wafer, the bottom plate is provided with a groove matched with the upper cover plate, and the groove is used for placing the wafer. The thickness difference between the bulge of the upper cover plate and the groove of the bottom plate is the same as that of the front-end device. The bottom plate groove is internally provided with a groove with the same size as the protruding circuit layer of the front end device, the bottom of the bottom plate groove is provided with a contact electrode which is the same as the communication electrode and the charging electrode, and the electrodes are supported by springs and are slightly higher than the groove at the bottommost. The bottom is provided with a data transceiving and charging circuit 15 matched with the front-end device.
Further, the "transfer station" may be used as a storage box for the front-end device, and further, the steps of the present invention for reconstructing the actual wafer temperature field are as follows:
the method comprises the following steps: and taking off the silicon cover on the front-end device, and establishing communication connection with the front-end device through the storage box.
Step two: the start, end and duration of the acquisition, the AD sampling rate, etc. are set by software written on the PC. The duration of the temperature acquisition of the wafer typically includes the entire process.
Step three: after the setting is finished, the front-end device is placed in the processing chamber through the mechanical arm, the semiconductor process flow is started, after the processing is finished and cooled, the silicon cover is removed, the front-end device is taken out through the mechanical arm and placed into the storage box, and the temperature information stored on the wafer is downloaded through serial port communication.
Step four: and analyzing the temperature information, and obtaining the temperature distribution of the whole wafer surface by adopting an inverse distance weight interpolation algorithm because the sensors are not distributed on the whole wafer surface.
Step five: after the temperature distribution of the whole device is obtained, the uniformity of the temperature in the wafer processing process and the deviation of the temperature in the whole process from the actual expected temperature can be analyzed. By adjusting the process conditions such as voltage, magnetic field and the like, the process conditions are optimized, and the mismatching probability of the wafer and the etching cavity is reduced.
Claims (4)
1. A wafer temperature field reconstruction device with a double-layer structure comprises: temperature measuring device, data transceiver, data processing apparatus, temperature measuring device includes: a lower wafer, an intermediate circuit layer and an upper wafer; the intermediate circuit layer includes: the temperature sensor is arranged on the PCB, and the temperature sensor is arranged on the PCB; a groove for placing a thin film battery is etched in the center of the lower layer wafer, and a heat insulating material is arranged between the thin film battery and the lower layer wafer; a through hole for placing a circuit on the PCB is etched in the center of the upper layer wafer, and a heat insulating material is attached to the side wall of the through hole; grooves for placing temperature sensors are formed in the center positions of the lower layer wafer and the upper layer wafer; the data line of the temperature sensor is a lead wire deposited on the surface of the lower layer wafer and the upper layer wafer, the lead wires are connected with welding points on a PCB (printed Circuit Board), the PCB is positioned at the central position between the upper layer wafer and the lower layer wafer, the peripheries of the central positions of the upper layer wafer and the lower layer wafer are bonded through high temperature resistant glue, and the temperature sensor of the upper layer wafer and the temperature sensor of the lower layer wafer are fixed at the same time; the thin film battery is connected with the PCB, and the PCB is also packaged with an electrode which extends out of the central through hole of the upper wafer; a detachable silicon cover is additionally arranged and used for protecting the electrode in actual working conditions.
The data transceiver comprises a base and an upper cover plate, wherein a wafer groove for placing a wafer is arranged on the base, an electrode groove for connecting an electrode is arranged at the central position of the bottom of the groove, a contact electrode is arranged in the electrode groove, and the position of the contact electrode corresponds to the position of the electrode of the temperature measuring device; the upper cover plate is provided with a bulge matched with the groove of the base and used for pressing the wafer placed in the wafer groove; the data transceiver realizes the charge and discharge and data exchange of the temperature measuring device through the contact electrode.
And the data processing device receives data from the data transceiver and is used for reconstructing the wafer temperature field.
2. The device for reconstructing the wafer temperature field with the double-layer structure as claimed in claim 1, wherein two circles of temperature sensor grooves are correspondingly formed on the lower wafer and the upper wafer, 8 temperature sensor grooves are formed in each circle, the interval between the adjacent temperature sensor grooves in each circle is 45 degrees, and the inner circle temperature sensor groove, the outer circle temperature sensor groove adjacent to the inner circle temperature sensor groove, and the center of the wafer are located on the same straight line.
3. The apparatus as claimed in claim 1, wherein a data connection module is disposed in the electrode groove of the base of the data transceiver, and the data connection module comprises: the insulating support is in a square bowl shape and is reversely buckled on the control circuit, a plurality of rod-shaped contact electrodes are arranged at the top of the insulating support in a penetrating mode, a spring barrier sheet is arranged in the middle of each contact electrode, and a contact sheet is arranged at the top of each contact electrode; the control circuit, the spring and the insulating support are all positioned in the shell, the contact electrode penetrates through the shell and the insulating support from the top, the contact piece is positioned outside the shell, and the spring barrier piece is positioned between the shell and the insulating support; when the electrode contacts the contact piece, the spring is compressed, so that the contact is more reliable; the contact electrode is positioned at the top end in the insulating bracket and is connected with the control circuit through a lead.
4. The device for reconstructing the wafer temperature field with the double-layer structure according to claim 1, wherein the grooves of the temperature sensors formed on the lower wafer and the upper wafer have a depth of 0.2mm, and the distance between the groove of the temperature sensor and the other side of the wafer is 0.4 mm; the width of the lead for connecting the temperature sensor and the PCB is not more than 0.7mm, and the thickness of the lead is 0.05 mm; the bottom of the groove for placing the thin film battery in the center of the lower layer wafer is 0.1mm away from the other side of the wafer.
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| CN202110675598.4A CN113506760B (en) | 2021-06-18 | 2021-06-18 | Wafer temperature field reconstruction device with double-layer structure |
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| CN202110675598.4A CN113506760B (en) | 2021-06-18 | 2021-06-18 | Wafer temperature field reconstruction device with double-layer structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173531A (en) * | 2004-12-20 | 2006-06-29 | Hitachi Kokusai Electric Inc | Substrate treating apparatus |
| WO2017200267A1 (en) * | 2016-05-16 | 2017-11-23 | 한국표준과학연구원 | Temperature measurement wafer sensor and method for manufacturing same |
| WO2018199601A1 (en) * | 2017-04-28 | 2018-11-01 | (주)에스엔텍 | Sensor-mounted wafer |
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- 2021-06-18 CN CN202110675598.4A patent/CN113506760B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173531A (en) * | 2004-12-20 | 2006-06-29 | Hitachi Kokusai Electric Inc | Substrate treating apparatus |
| WO2017200267A1 (en) * | 2016-05-16 | 2017-11-23 | 한국표준과학연구원 | Temperature measurement wafer sensor and method for manufacturing same |
| WO2018199601A1 (en) * | 2017-04-28 | 2018-11-01 | (주)에스엔텍 | Sensor-mounted wafer |
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Inventor after: Wang Chao Inventor after: Jiang Jing Inventor after: Niu Yi Inventor after: Jia Jingcai Inventor after: Chen Mengchao Inventor after: Zhong Yekui Inventor after: Yu Peifeng Inventor after: Zhang Zezhan Inventor before: Wang Chao Inventor before: Jia Jingcai Inventor before: Chen Mengchao Inventor before: Zhong Yekui Inventor before: Yu Peifeng Inventor before: Zhang Zezhan Inventor before: Niu Yi Inventor before: Jiang Jing |
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