JP2006114638A - Heat treatment apparatus, heat treatment method, and method of calculating heat-up rate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which can keep the heat-up rate constant under the same process conditions until the temperature of a workpiece reaches a target process temperature. <P>SOLUTION: The single wafer heat treatment apparatus which performs a heat treatment on the workpiece 5 comprises a treatment container 4 which can store the workpiece, supporting portion 10 for supporting the workpiece in contact with the rear surface thereof, gas supply means 14 for introducing a prescribed gas into the treatment container, exhaust means 16 for emitting the atmosphere out of the treatment container, heating means 30 which is installed outside the treatment container to heat the workpiece, power supply source 33 for supplying electric power to the heating means, temperature detecting means 40 installed in the supporting portion, and power controlling means 34 which finds out the cool-down rate of the supporting portion immediately after it is made to support the workpiece based on the detection value from the temperature detecting means and controls the power output from the power supply source so that the cool-down rate may be kept at a prescribed reference value. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a single wafer heat treatment apparatus, a heat treatment method, and a temperature increase rate calculation method for performing a predetermined heat treatment on an object to be processed such as a semiconductor wafer.

In general, in the manufacturing process of a semiconductor integrated circuit, various film formations such as W, WSi, Ti, TiN, TiSi, SiO _2, etc. are used to form wiring patterns, hole holes, and interlayer insulating films on the surface of a semiconductor wafer. The film-forming heat treatment is repeated. In addition to the film formation heat treatment, various heat treatments such as etching treatment, oxidation diffusion treatment, and ashing treatment are also performed.
In this case, in order to improve the yield and the like, it is necessary to perform various heat treatments uniformly over the wafer surface. For this purpose, the process pressure, the flow rate of the process gas, the process temperature, etc. are accurately controlled. It must be managed and controlled, especially temperature management. As this type of heat treatment apparatus, for example, a single-wafer type heat treatment apparatus is known in which a semiconductor wafer is rapidly heated and heated using a powerful heating lamp or powerful resistance heating means to perform a predetermined heat treatment ( Patent Documents 1 and 2). Specifically, for example, in a heat treatment apparatus using a strong resistance heating means, a semiconductor wafer is carried into a processing container that has been heated and maintained in advance at a predetermined temperature, for example, the process temperature, and this is raised from room temperature to the process temperature. At the same time, necessary gas is introduced into the processing vessel while maintaining a predetermined process pressure, and heat treatment is performed.

By the way, when a semiconductor wafer is heat-treated under the same process conditions, it is necessary to always keep the same heat-treated state constant, that is, maintain high reproducibility. Therefore, as described above, it is particularly important to maintain the semiconductor wafer temperature at the target process temperature, that is, the target temperature with high accuracy under the same process conditions. The temperature rise time until reaching the value is also an important factor. The reason for this is that if the temperature rise time fluctuates, the thermal history differs among multiple semiconductor wafers that should have been subjected to the same heat treatment, causing variations in the electrical characteristics of the manufactured semiconductor integrated circuit. Because it will end up.
In order to determine the temperature rise time, generally, a thermocouple is attached to the wafer and this is installed in a heat treatment apparatus, and the same heat treatment time as that in actual heat treatment is performed and the temperature rise time at that time is measured. ing. In this case, when the film type to be deposited on the wafer is different, that is, when the emissivity of the wafer is different, the temperature rising time is also different, so the wafer is prepared for the different emissivity, and the above-mentioned is performed for each wafer. The temperature rising time was measured.

JP-A-3-293723 JP-A-6-323916

However, even though the same heat treatment program (recipe) is used during the actual heat treatment, the temperature rise time until the room temperature semiconductor wafer reaches the target temperature may vary due to aging of the heat treatment apparatus or the like. There was an inconvenience that occurred.
Further, in general, in the heat treatment apparatus having the same structure, the operation is controlled by the same recipe, but there is a disadvantage that the temperature rise varies due to individual differences between the heat treatment apparatuses.
Furthermore, as described above, it is very costly and time consuming to measure the temperature rise time by providing a thermocouple for each film type, etc., that is, each time the wafer emissivity is different. In addition, since the heat treatment apparatus itself needs to be opened, there is a problem that it is not preferable in terms of particle countermeasures.
The present invention has been devised to pay attention to the above problems and to effectively solve them.
A first object of the present invention is to provide a heat treatment apparatus and a heat treatment method capable of maintaining a constant temperature rise time until the temperature of an object to be processed reaches a target process temperature under the same process conditions. Is to provide.
The second object of the present invention is to provide a temperature rising rate that can quickly and easily determine the temperature rising rate up to the process temperature of the objects to be processed having different emissivities without using a large number of objects to be processed having different emissivities. It is in providing the calculation method of.

  As a result of earnest research on the heat transfer at the time of temperature rise of the semiconductor wafer, the inventors of the present invention have made a slight increase immediately after supporting the semiconductor wafer at room temperature on the support portion in the processing vessel maintained at the process temperature. Since heat transfer occurs from the mounting table side to the wafer side through the support portion for a long time, the temperature of the support portion decreases, but the temperature decrease rate of the support portion at this time has a one-to-one relationship with the temperature increase rate of the wafer. Therefore, the present invention has been achieved by obtaining the knowledge that the heating rate of the wafer can be controlled by controlling the heating means based on the cooling rate.

  The invention according to claim 1 is a single wafer type heat treatment apparatus for performing heat treatment on an object to be processed, wherein the object to be processed is in contact with a processing container capable of accommodating the object to be processed and a back surface of the object to be processed. A gas supply means for introducing a predetermined gas into the processing container, an exhaust means for exhausting the atmosphere in the processing container, and an object to be processed provided outside the processing container. A heating means for heating, a power supply source for supplying power to the heating means, a temperature detection means provided in the support part, and the object to be processed on the support part based on a detection value from the temperature detection means Power control means for obtaining a temperature drop rate of the support portion immediately after supporting the power supply and controlling output power of the power supply source so that the temperature drop rate maintains a predetermined reference value. It is the heat processing apparatus to do.

  Thus, based on the detection value of the temperature detection means provided in the support part that supports the object to be processed, the temperature decrease rate of the support part immediately after the support part supports the object to be processed maintains a predetermined reference value. Since the power supply to the heating means is controlled as described above, the temperature rise time until the temperature of the object to be processed reaches the target temperature can be kept constant under the same process conditions. it can. As a result, it becomes possible to maintain high reproducibility of the heat treatment on the object to be processed.

In this case, as defined in claim 2, the support portion is set to a predetermined process temperature immediately before supporting the object to be processed.
For example, as defined in claim 3, the support portion is a support protrusion made of a heat-resistant material standing from a bottom portion in the processing container.
Further, for example, as defined in claim 4, the temperature detecting means comprises a thermocouple provided in the support protrusion.
For example, as defined in claim 5, the predetermined reference value is set for each different aspect of the object to be processed.

Further, for example, as defined in claim 6, there is provided an aspect input means for inputting the aspect of the object to be processed.
For example, as defined in claim 7, the different aspects of the object to be processed are states in which the reflectance of the object to be processed is different.
Further, for example, as defined in claim 8, the different aspects of the object to be processed are a state in which a film type on the surface of the object to be processed is different or a state in which implanted ions are different.
According to the ninth aspect of the present invention, the back surface of the object to be processed is brought into contact with the support portion in the processing container to support the object to be processed, and the object to be processed is heated by the heating means to be predetermined on the object to be processed. In the heat treatment method in which the heat treatment is performed, the temperature drop rate of the support portion immediately after the object to be processed is supported on the support portion that has been set to a predetermined temperature in advance maintains a predetermined reference value. Thus, a heat treatment method is characterized in that the power supplied to the heating means is controlled.

In this case, for example, as defined in claim 10, the predetermined reference value is set for each different aspect of the object to be processed.
According to an eleventh aspect of the present invention, the back surface of the object to be processed is brought into contact with a support portion in the processing container to support the object to be processed, and the object to be processed is heated by heating means to be predetermined on the object to be processed. In the method for calculating the temperature rise rate in the heat treatment in which the heat treatment is performed, the step of obtaining the temperature lowering rate of the support portion immediately after the object to be processed is supported on the support portion that has been made a predetermined temperature in advance, and And a step of determining the temperature increase rate based on a temperature decrease rate and a previously determined temperature decrease-temperature increase correlation.
According to this, it is possible to quickly and easily determine the rate of temperature rise up to the process temperature of the objects to be processed having different emissivities without using a large number of objects to be processed having different emissivities.

According to the heat treatment apparatus, heat treatment method, and temperature increase rate calculation method of the present invention, the following excellent effects can be achieved.
According to the invention which concerns on Claims 1-10, based on the detected value of the temperature detection means provided in the support part which supports a to-be-processed object, the temperature fall rate of the support part immediately after making a support part support a to-be-processed object Since the power supply to the heating means is controlled so as to maintain a predetermined reference value, the temperature rise until the temperature of the object to be processed reaches the process temperature that is the target temperature under the same process conditions. Time can be kept constant. As a result, the reproducibility of the heat treatment for the object to be processed can be maintained high.
According to the invention which concerns on Claim 11, the temperature increase rate to the process temperature of the to-be-processed object from which emissivity differs can be calculated | required rapidly and easily, without using many to-be-processed objects from which emissivity differs.

Hereinafter, an embodiment of a heat treatment apparatus, a heat treatment method, and a temperature increase rate calculation method according to the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view showing an example of a single wafer heat treatment apparatus according to the present invention, and FIG. 2 is a plan view showing heating means of the apparatus shown in FIG.
First, as shown in FIG.1 and FIG.2, this heat processing apparatus 2 has the processing container 4 made into the rectangular shape made from quartz, for example. An opening 6 for introducing, for example, a semiconductor wafer 5 as an object to be processed is formed on one side of the processing container 4, and a flange portion 8 is formed around the opening 6. A plurality of support projections 12 made of quartz, for example, are provided on the bottom of the processing container 4 as support parts 10 for supporting the wafer 5 introduced into the container. The support protrusion 12 contacts and supports the periphery of the back surface of the wafer 5.

In addition, a transfer pick (not shown) that enters the processing container 4 is prevented from interfering with the support protrusion 12, and this pick is inserted between the support protrusions 12 for transfer. The wafer 5 is transferred by moving the pick up and down.
In addition, a gas supply port 14 is provided at one end of the processing container 4 as a gas supply means for introducing a predetermined gas into the processing container 4. On the cooling plate 20 side, which will be described later, an exhaust port 16 is provided as an exhaust means for exhausting the atmosphere in the processing container 4. The atmosphere is exhausted from the exhaust port 16 by, for example, factory exhaust. Thus, by providing the gas supply port 14 and the exhaust port 16 on the opposite sides of the processing container 4, the gas flow in the processing container 4 can be made into a laminar flow state.
Further, a cooling plate 20 is provided on the end surface of the opening 6 of the processing container 4 with a seal member 18 such as an O-ring interposed therebetween so as to be in contact with the flange portion 8. And in this cooling plate 20, the cooling water channel 22 which flows a cooling water is provided, and the said sealing member 18 is cooled. The cooling plate 20 is fastened and fixed by, for example, an aluminum casing 24 surrounding the outside of the processing container 4 with bolts 26 or the like. At this time, the flange portion 8 of the processing container 4 is also fixed at the end of the casing 24. It has come to be able to do.

  A gate valve 28 that is opened and closed in an airtight manner when the wafer W is loaded and unloaded is provided at a portion facing the opening 6. A heating means 30 for heating the wafer 5 is provided immediately outside the processing container 4 so as to surround the heat diffusion plate 29 made of, for example, SiC. Specifically, the heating means 30 is formed by a resistance heater 32 made of Kanthal wire provided over the entire upper surface side and lower surface side of the processing container 4. Each resistance heater 32 is connected to a power supply source 33 that supplies power. The resistance heater 32 may be provided on the side surface on the outer side of the processing container 4. The resistance heater 32 is divided into a plurality of heating zones, that is, three heating zones 32A, 32B, and 32C in this case, and is turned on for each of the heating zones 32A to 32C by a power control means 34 such as a microcomputer. Power to be controlled. Further, the power control means 34 can control the temperature lowering rate of the support portion 10 as will be described later. Here, the three heating zones include a front heating zone 32A, a central heating zone 32B, and a rear heating zone 32C. Thermocouples 36A, 36B, and 36C are provided for each of the heating zones 32A to 32C, and the detected temperature can be input to the power control means 34.

The support portion 10 is provided with a temperature detection means 40 that is a feature of the present invention, and the detected value can be input to the power control means 34. Specifically, the temperature detection means 40 is formed by, for example, a thermocouple 40A, and is provided close to the back side of the wafer W. The thermocouple 40A may be embedded in the support protrusion 12 made of, for example, quartz, or may be accommodated in the support protrusion 12 in a hollow state. The support unit 10 immediately after the wafer 5 is supported by the support unit 10 or a temperature in the vicinity of the support unit 10 can be accurately detected.
In the power control means 34 for inputting the detection value from the temperature detection means 40, the temperature lowering rate of the support section 10 immediately after the room temperature wafer 5 is supported on the support section 10 heated to a predetermined temperature. The output power of the power supply source 33 can be controlled so that the temperature drop rate maintains a predetermined reference value.
In addition, the power control unit 34 includes a mode input unit 42 for inputting information on the mode of the semiconductor wafer 5, for example, what kind of film is deposited on the wafer surface and what thickness, if necessary. It is connected. Further, a heat insulating material 44 is interposed between the heating means 30 and the casing 24 surrounding the outside.

Next, the method of the present invention performed using the heat treatment apparatus configured as described above will be described.
First, a general heat treatment flow of the semiconductor wafer 5 as the object to be processed will be described. A heat treatment program to be executed, that is, a recipe or the like is input in advance to a control unit including a computer that controls the operation of the entire apparatus. Here, for example, the power control unit 34 serves as the control unit.
The power control means 34 drives the power supply source 33 in advance to supply power to the heating means 30, and the resistance heater 32 raises and maintains the processing container 4 to a predetermined temperature, for example, a heat treatment process temperature in advance. I am letting. This temperature control is individually feedback-controlled based on detection values from thermocouples 36A to 36C arranged in the heating zones 32A to 32C.

Then, in the state where the processing container 4 is maintained at a predetermined temperature as described above, the gate valve 28 is opened to carry, for example, the room temperature semiconductor wafer 5 brought to a constant temperature into the processing container 4, and this is supported by the support section. It is placed on and supported by 10 support protrusions 12. The room temperature in the clean room in which this heat treatment apparatus is installed is always maintained at a constant temperature, for example, about 24 ° C.
As described above, the wafer W placed on the support protrusion 12 is rapidly heated from room temperature to the process temperature by radiation from the processing container 4 side or through the support protrusion 12 by heat conduction or the like. Then, while supplying a predetermined gas required from the gas supply port 14 into the processing container 4, the inside of the processing container 4 is maintained at a predetermined process pressure, and heat treatment is performed for a predetermined time.

  In the heat treatment process as described above, it is important to maintain the temperature of the wafer 5 at a predetermined process temperature during the heat treatment. However, in order to manage the thermal history and the like, or to improve the reproducibility of the heat treatment. It is equally important to manage the temperature rise time, that is, the temperature rise rate until the wafer temperature reaches from the room temperature to the process temperature. In this case, in the conventional apparatus, the temperature increase time, that is, the temperature increase rate may fluctuate due to aging of the apparatus or the like. In the present invention, the wafer 5 is not supported by the support protrusion 12 during the temperature increase. The temperature drop rate of the support protrusion 12 is monitored by the provided thermocouple 40A, and the power control means 34 finely controls the supplied power so that the temperature drop rate maintains a predetermined reference value. . That is, when the wafer 5 at room temperature is placed on the support protrusion 12, the temperature of the wafer 5 immediately rises rapidly, but heat transfer from the support protrusion 12 and the surrounding processing container 4 maintained at the process temperature. The heat is temporarily deprived by heat radiation and the temperature drops for a short time, and then the temperature rises. The temperature decrease rate of the support protrusion 12 when the temperature drops has a one-to-one correlation with the temperature increase rate at this time of the wafer 5 itself. Therefore, by controlling the temperature decrease rate, the temperature increase rate is also indirectly increased. It can be controlled to a desired value. In other words, if the supplied power is controlled so that the temperature decrease rate becomes a predetermined value (reference value), the temperature increase rate of the wafer 5 itself at that time can be kept constant.

  The reference value for the temperature drop rate may be the reference value when the heat treatment is first performed, for example, and the temperature drop rate at any time may be set by the operator as the reference value. Further, the temperature lowering rate depends on the mode of the wafer 5, that is, when the reflectance is different, the temperature lowering rate is also different. Therefore, the mode is input by the mode input means 42 as necessary. In this case, the different mode means that the film type on the wafer surface at the time of loading is different (including the case where no film is formed) or the ion implanted on the wafer surface is different, that is, the emissivity is different. It is assumed that all are included.

Here, the relationship between the temperature lowering rate when the wafer is carried in and the temperature rising rate of the wafer itself will be described in detail.
FIG. 3 is a graph showing the relationship between the support portion monitor TC temperature of the semiconductor wafer and the wafer TC temperature, and FIG. 4 is a graph showing the temperature rise rate of the wafer TC and the temperature drop rate of the support portion monitor TC with respect to the semiconductor wafer mode (emissivity). It is a graph which shows a relationship. Here, “TC” indicates a thermocouple.
First, as shown in FIG. 3, an unprocessed wafer having no thin film formed on its surface, that is, a bare wafer is used here. In the temperature measurement, the wafer TC temperature is directly measured by attaching the surface of the wafer itself or a thermocouple “TC”. This measured value is shown by curve A and represented by the left vertical axis. The measured value of the thermocouple 40A provided on the support 10 is indicated by a curve B and is represented by the right vertical axis. The set temperature of the wafer is 950 ° C., and the room temperature is 22 ° C. Further, it is considered that the set temperature is reached when the wafer temperature reaches 95% (= 902.5 ° C.) of the set temperature.

As is clear from this figure, as shown by the curve A, when a wafer at room temperature is loaded into the processing container 4 and placed thereon, the wafer temperature rises rapidly and takes about 28 sec to reach the target temperature ( 902.5 ° C).
On the other hand, as shown by the curve B, the temperature of the support portion monitor TC temporarily decreases when the wafer is loaded and placed, and gradually increases after the temperature reaches the bottom P1. Yes. The temperature rising rate at this time is “(902.5−22) /28=31.4° C./sec”. The reason why the temperature of the support portion 10 temporarily decreases in this way is that the room temperature wafer 5 takes heat from the support portion 10 and the processing container 4 side as described above. The temperature lowering rate at this time is “−2.67 ° C./sec” because a temperature drop of 56 ° C. occurs in approximately 21 seconds.
Thus, when the process temperature is set to 950 ° C. using a bare wafer, it can be understood that the temperature lowering rate is “−2.67 ° C./sec”.

Based on the above-mentioned phenomenon, in addition to the bare wafer, a similar experiment was conducted on a wafer having a SiN film formed on the wafer surface and a wafer having a polysilicon (Poly) film formed on the wafer surface. Also, the set temperature was variously changed within the range of 800 to 1100 ° C. FIG. 4 shows the temperature increase rate of the wafer TC and the temperature decrease rate of the support section monitor TC (thermocouple 40A) obtained at this time. Note that a point A1 in FIG. 4 indicates the temperature increase rate of the curve A in FIG. 3, and a point B1 indicates the temperature decrease rate of the curve B in FIG.
As is apparent from the graph shown in FIG. 4, when the wafer mode is different, such as a bare wafer, SiN wafer, or poly wafer, that is, when the emissivity is different, the temperature increase rate is also different and the set temperature is different accordingly. And the corresponding heating rate is different. The heating rate of each wafer changes approximately linearly for each mode.

On the other hand, each temperature decrease rate also corresponds to the above temperature increase rate. In this case as well, the temperature decrease rate of each wafer changes approximately linearly for each mode.
As described above, it can be confirmed that the temperature drop rate of the support unit monitor TC is uniquely determined every time the film type on the wafer is different, in other words, every time the emissivity is different and every time the set temperature is different. It was. Therefore, if the amount of electric power supplied to the heating means 30 is controlled so as to maintain the specific temperature drop rate for a short time immediately after the room temperature wafer 5 is supported by the support portion 10, the predetermined mode of the present invention can be achieved. The temperature rising rate of the wafer 5 can be controlled to be always constant, the arrival time to the set temperature can be kept constant, and the reproducibility of the heat treatment for the wafer can be kept high. In this case, the set temperature for the wafer 5 and the mode of the wafer may be incorporated in the recipe in advance, or the mode of the wafer may be input by the mode input means 42 as described above.

For the reference value of the temperature drop rate for each wafer mode, for example, each temperature drop rate when the first processing is performed for each wafer mode may be used as the reference value.
In addition, when performing heat treatment using the same recipe (program) for another heat treatment apparatus having the same structure as the above heat treatment apparatus, the temperature drop rate is managed as described above, regardless of individual differences between the apparatuses. High reproducibility of heat treatment can be maintained.
Further, when the relationship between the temperature drop rate of the support unit monitor TC and the temperature rise rate of the wafer TC is graphed for each point shown in FIG. 4, the relationship is as shown in FIG. That is, when the temperature drop rate (X) of the support portion monitor TC is taken on the horizontal axis and the temperature rise rate (Y) of the wafer TC is taken on the vertical axis, and the relationship between the two is seen, a linear equation as shown in FIG. The temperature drop-temperature rise correlation can be expressed as Y = -13.575X-6.1054 ". The correlation coefficient R ² at this time is “0.9793”, which indicates that a very high correlation exists. That is, there is a linear temperature decrease-temperature increase relationship represented by the above equation, regardless of the set temperature of the wafer, between the temperature decrease rate of the support section monitor TC and the temperature increase rate of the wafer TC.

Accordingly, in FIG. 5, the temperature drop rate and the temperature rise rate are obtained by measuring the “24” point as a whole, but the temperature drop rate and the temperature rise rate for the “2” point that is at some distance apart at least. The temperature drop-temperature rise correlation represented by the above linear equation can be obtained simply by measuring the above. In order to increase the accuracy of the temperature drop-temperature rise correlation, the number of measurement points may be increased.
Further, if the temperature drop-temperature rise correlation shown in FIG. 5 is obtained, when it is desired to obtain the temperature rise rate for a wafer having a certain emissivity (wafer mode), a predetermined heat treatment is performed on the wafer having the emissivity, The temperature drop rate of the support unit monitor TC (thermocouple 40A) may be obtained, and the temperature rise rate of the wafer at that time can be easily obtained from this temperature drop rate and the graph shown in FIG.
Therefore, in the conventional method, when obtaining the heating rate of wafers having different film types, that is, wafers having different emissivities, a thermocouple is connected to the wafer surface for each wafer having different film types. Although the temperature increase rate is obtained, according to the present invention, such a measurement cost is required and a complicated time-consuming operation is not required. The rate can be determined quickly and easily.

Therefore, when this program (recipe) is transplanted to another heat treatment apparatus of the same type or a different kind of heat treatment apparatus, such as a lamp heating type heat treatment apparatus, the transplant operation of this program can be easily performed.
In addition, the numerical value shown in the said Example or the example of a film | membrane type is only an example, and of course is not limited to these.
The object to be processed is not limited to a semiconductor wafer, and the present invention can of course be applied to an LCD substrate, a glass substrate, and the like.

It is a section lineblock diagram showing an example of the single wafer type heat treatment device concerning the present invention. It is a top view which shows the heating means of the apparatus shown in FIG. It is a graph which shows the relationship between the support part monitor TC temperature of a semiconductor wafer, and wafer TC temperature. It is a graph which shows the relationship between the temperature increase rate of the wafer TC with respect to the aspect (emissivity) of a semiconductor wafer, and the temperature decrease rate of the support part monitor TC. FIG. 5 is a graph showing the relationship between the temperature drop rate of the support section monitor TC and the temperature rise rate of the wafer TC for each point shown in FIG. 4.

Explanation of symbols

2 Heat treatment apparatus 4 Processing container 5 Object to be processed (semiconductor wafer)
DESCRIPTION OF SYMBOLS 10 Support part 12 Support protrusion 14 Gas supply port (gas supply means)
16 Exhaust port (exhaust means)
DESCRIPTION OF SYMBOLS 30 Heating means 32 Resistance heater 33 Electric power supply source 34 Electric power control means 40 Temperature detection means 40A Thermocouple 42 Aspect input means

Claims (11)

In a single-wafer type heat treatment apparatus that performs heat treatment on a workpiece,
A processing container capable of accommodating the object to be processed;
A support portion that contacts the back surface of the object to be processed and supports the object to be processed;
Gas supply means for introducing a predetermined gas into the processing container;
Exhaust means for exhausting the atmosphere in the processing vessel;
A heating means provided on the outside of the processing container for heating the object to be processed;
A power supply source for supplying power to the heating means;
Temperature detecting means provided in the support part;
Based on the detection value from the temperature detection means, the temperature decrease rate of the support part immediately after the object to be processed is supported by the support part, and the power supply is performed so that the temperature decrease rate maintains a predetermined reference value. Power control means for controlling the output power of the source;
A heat treatment apparatus comprising:   The heat treatment apparatus according to claim 1, wherein the support portion is set to a predetermined process temperature immediately before supporting the object to be processed.   The heat treatment apparatus according to claim 1, wherein the support portion is a support protrusion made of a heat-resistant material standing from a bottom portion in the processing container.   The heat treatment apparatus according to claim 3, wherein the temperature detection unit includes a thermocouple provided in the support protrusion.   The heat treatment apparatus according to claim 1, wherein the predetermined reference value is set for each different aspect of the object to be processed.   6. The heat treatment apparatus according to claim 5, further comprising a mode input means for inputting a mode of the object to be processed.   The heat treatment apparatus according to claim 5 or 6, wherein a different aspect of the object to be processed is a state in which the reflectance of the object to be processed is different.   7. The heat treatment apparatus according to claim 5, wherein a different aspect of the object to be processed is a state in which a film type on the surface of the object to be processed is different, or a state in which implanted ions are different. A heat treatment in which a back surface of the object to be processed is brought into contact with a support part in the processing container to support the object to be processed, and the object to be processed is heated by a heating means to perform a predetermined heat treatment. In the method
The power supplied to the heating means is controlled so that the temperature drop rate of the support section immediately after the object to be processed is supported by the support section that has been set to a predetermined temperature maintains a predetermined reference value. A heat treatment method characterized by comprising:   The heat treatment method according to claim 9, wherein the predetermined reference value is set for each different aspect of the object to be processed. A heat treatment in which a back surface of the object to be processed is brought into contact with a support part in the processing container to support the object to be processed, and the object to be processed is heated by a heating means to perform a predetermined heat treatment. In the method for calculating the heating rate in
Obtaining a temperature drop rate of the support part immediately after the object to be processed is supported on the support part that has been previously set to a predetermined temperature;
And a step of determining the temperature increase rate based on the temperature decrease rate and a previously determined temperature decrease-temperature increase correlation.

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