JP2551182B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2551182B2 JP2551182B2 JP2015861A JP1586190A JP2551182B2 JP 2551182 B2 JP2551182 B2 JP 2551182B2 JP 2015861 A JP2015861 A JP 2015861A JP 1586190 A JP1586190 A JP 1586190A JP 2551182 B2 JP2551182 B2 JP 2551182B2
- Authority
- JP
- Japan
- Prior art keywords
- plate
- substrate
- heater
- heating element
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、反応室の面状発熱体上の基板上で導入され
たガスの化学反応を行わせ、基板上に薄膜を形成するCV
D,スパッタ等の半導体製造装置，とくに面状発熱体に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention is a CV for forming a thin film on a substrate by causing a chemical reaction of a gas introduced on the substrate on a planar heating element of a reaction chamber.
D, Sputtering, etc. Semiconductor manufacturing equipment, especially planar heating element.
一般に、半導体製造装置は、第５図に示すように、反
応室（１）に面状発熱体（２）を設け、この発熱体
（２）上に基板（３）を載置し、基板（３）を発熱体
（２）により高温に加熱し、膜にしようとする材料のガ
ス（４）を反応室（１）に導入し、基板（３）上で分
解，還元，酸化，置換などの化学反応を行わせ、基板
（３）上に所望の薄膜を形成する。Generally, in a semiconductor manufacturing apparatus, as shown in FIG. 5, a planar heating element (2) is provided in a reaction chamber (1), a substrate (3) is placed on the heating element (2), and a substrate ( 3) is heated to a high temperature by the heating element (2), the gas (4) of the material to be formed into a film is introduced into the reaction chamber (1), and decomposition, reduction, oxidation, substitution, etc. on the substrate (3) are performed. A chemical reaction is performed to form a desired thin film on the substrate (3).
なお、同図において、（５）はヒータ、（６）は電極
である。In the figure, (5) is a heater and (6) is an electrode.
そして、従来の前記面状発熱体（２）は、第６図ない
し第８図に示すように、焼結型の赤外線の透過が良くな
いセラミックスからなる円板状の熱板（７）の上面に、
渦巻状の溝（８）を形成し、その溝（８）に断面円形の
ヒータ（９）を埋設し、熱板（７）の上下面を熱板
（７）と同材質の押え板（10），（11）によりはさんで
構成し、上側の押え板（10）の上面にSUS,M0等からなる
金属プレートを設け、そのプレート上に基板を載置して
いる。The conventional sheet heating element (2) is, as shown in FIGS. 6 to 8, an upper surface of a disc-shaped heating plate (7) made of a ceramic that does not allow good transmission of infrared rays of a sintering type. To
A spiral groove (8) is formed, a heater (9) having a circular cross section is embedded in the groove (8), and the upper and lower surfaces of the hot plate (7) are provided with a holding plate (10) made of the same material as the hot plate (7). ) And (11), a metal plate made of SUS, M 0, etc. is provided on the upper surface of the upper holding plate (10), and the substrate is placed on the plate.
なお、溝（８）の断面は一辺が約1mmの正方形で半径
方向の溝（８）の間隔は約1mm弱であり、ヒータ（９）
の直径は1mm弱である。In addition, the cross section of the groove (8) is a square with one side of about 1 mm, and the interval between the grooves (8) in the radial direction is less than about 1 mm.
Has a diameter of less than 1 mm.
従来の前記発熱体（２）の場合、溝（８）及びヒータ
（９）が渦巻状であるため、通電時ヒータ（９）が熱膨
張により伸張して拡大し、熱板（７）の上面部及び上側
の押え板（10）を破損する。In the case of the conventional heating element (2), since the groove (8) and the heater (9) have a spiral shape, the heater (9) expands due to thermal expansion during energization, and the upper surface of the hot plate (7). And the upper holding plate (10) are damaged.
さらに、ヒータ（９）からの熱は、上側の押え板（1
0）及び金属プレートが赤外線を透過しないため、伝導
により基板（３）に到達し、基板（３）を急速加熱する
ことができない。Further, the heat from the heater (9) is transferred to the upper holding plate (1
Since 0) and the metal plate do not transmit infrared rays, they reach the substrate (3) by conduction and cannot rapidly heat the substrate (3).
なお、上側の押え板などを石英により形成し、急速加
熱を可能にしたものもある。There is also one in which the upper holding plate or the like is made of quartz to enable rapid heating.
本発明は、前記の点に留意し、熱板及び押え板の破損
を防止した半導体製造装置を提供することを目的とす
る。The present invention has been made in consideration of the above points, and an object of the present invention is to provide a semiconductor manufacturing apparatus in which damage to a hot plate and a pressing plate is prevented.
前記課題を解決するために、本発明の半導体製造装置
は、反応室の面状発熱体上に基板を設け、前記基板上で
導入されたガスの化学反応を行わせ、前記基板上に薄膜
を形成するCVD,スパッタ等の半導体製造装置において、 前記面状発熱体を、上面を複数個の扇形の区画に等分
割した円板状の熱板と、前記各区画毎に中心部側から周
縁部側へと，周縁部側から中心部側へと，同心円状に折
返して形成された溝と、前記溝に埋設された横方向に長
寸の断面矩形状のヒータと、前記熱板上に重合され赤外
線の透過の良好な石英からなる円板状の押え板とにより
構成したものである。In order to solve the above problems, the semiconductor manufacturing apparatus of the present invention provides a substrate on a planar heating element of a reaction chamber, causes a chemical reaction of a gas introduced on the substrate, and forms a thin film on the substrate. In a semiconductor manufacturing apparatus such as CVD or sputtering for forming, the planar heating element is a disk-shaped heating plate whose upper surface is equally divided into a plurality of fan-shaped compartments, and a peripheral portion from the center side for each of the compartments. Side, from the peripheral side to the central side, are formed by concentrically folding back, a heater having a rectangular cross section elongated in the lateral direction embedded in the groove, and superposed on the hot plate. And a disc-shaped holding plate made of quartz that transmits infrared rays well.
前記のように構成された本発明の半導体製造装置は、
円板状の熱板の上面を複数個の扇形の区画に等分割し、
各区画毎に同心円状に折返した溝を形成し、その溝に横
方向に長寸の断面矩形状のヒータを埋設し、熱板に赤外
線の透過の良好な石英からなる円板状の押え板を重合し
たため、熱膨張によるヒータの円周方向の伸張が折返し
により相殺されて極めて小さく、熱板の上面部を破損し
なく、また、ヒータの断面が横方向に長くて扁平であ
り、上側の押え板を破損することもなく、均一に加熱で
きる。The semiconductor manufacturing apparatus of the present invention configured as described above,
The upper surface of the disc-shaped heat plate is equally divided into a plurality of fan-shaped sections,
A concentric circular groove is formed in each section, a heater with a rectangular cross section that is long in the lateral direction is embedded in the groove, and a disk-shaped holding plate made of quartz that transmits infrared rays well on the hot plate. Since the expansion of the heater in the circumferential direction due to thermal expansion is offset by folding back, it is extremely small, the upper surface of the hot plate is not damaged, and the cross section of the heater is long and flat in the lateral direction. The pressing plate can be heated uniformly without damage.
とくに、円板状の熱板の上面が、複数個の扇形の区画
に等分割され、熱板の上面が３個以上に分割されている
ため、ヒータの円周方向の長さが２分割よりも短く、ヒ
ータの外側と内側との長さの差がごく僅かであり、ヒー
タの熱膨張による熱板の上面部の破損が皆無である。In particular, the upper surface of the disk-shaped heating plate is evenly divided into a plurality of fan-shaped sections, and the upper surface of the heating plate is divided into three or more sections. The length difference between the outer side and the inner side of the heater is very small, and the upper surface of the hot plate is not damaged by the thermal expansion of the heater.
さらに、上側の押え板が赤外線の透過の良好な石英か
らなるため、伝導でなく輻射によりサセプタを加熱で
き、急速加熱が可能であり、消費電力も大幅に削減でき
る。Furthermore, since the upper holding plate is made of quartz, which transmits infrared rays well, the susceptor can be heated by radiation rather than conduction, and rapid heating is possible, and power consumption can be greatly reduced.
１実施例について、第１図ないし第４図を参照して説
明する。One embodiment will be described with reference to FIGS. 1 to 4.
それらの図面において、（12）は面状発熱体（２）の
円板状の熱板であり、赤外線の透過の良好な溶解型の透
明な石英からなる。（13）は熱板（12）の上面を複数個
の扇形に等分割して形成された区画であり、図示は４分
割を示す。In these drawings, (12) is a disk-shaped heating plate of the sheet heating element (2), which is made of a transparent transparent fused quartz that transmits infrared rays well. (13) is a section formed by equally dividing the upper surface of the heating plate (12) into a plurality of fan shapes, and the drawing shows four divisions.
（14）は各区画（13）毎に同心円状に折返して形成さ
れた，横方向に長寸の断面矩形状の溝であり、中心部側
から周縁部側へと，周縁部側から中心部側へと順次に形
成され、各区画（13）毎の溝（14）は中心部側又は周縁
部側で隣接の区画（13）の溝（14）に連通している。Reference numeral (14) is a groove having a rectangular cross-section that is long in the lateral direction and is formed by folding back concentric circles for each section (13). The groove is from the central portion side to the peripheral portion side, and the peripheral portion side is the central portion. The grooves (14) for each of the sections (13) communicate with the grooves (14) of the adjacent sections (13) on the center side or the peripheral edge side.
（15）は溝（14）に埋設されたヒータであり、横方向
に長寸の断面矩形状であり、板体から打抜きにより形成
され、幅が４〜5mm,厚みが約1mmである。Reference numeral (15) is a heater embedded in the groove (14), which has a rectangular cross section that is long in the lateral direction, is formed by punching from a plate body, and has a width of 4 to 5 mm and a thickness of about 1 mm.
（16）は熱板（12）の上面に重合された上側の押え板
であり、熱板（12）と同材質からなり、下面の一部が溝
（14）の上側に嵌合している。（17）は熱板（12）の下
面に重合された下側の押え板であり、熱板（12）と同材
質からなる。Reference numeral (16) is an upper holding plate that is superposed on the upper surface of the heating plate (12), is made of the same material as the heating plate (12), and has a part of the lower surface fitted over the groove (14). . Reference numeral (17) is a lower holding plate which is superposed on the lower surface of the heating plate (12) and is made of the same material as that of the heating plate (12).
（18）は面状発熱体（２）のハウジングであり、SUS3
04からなる。（19）は上側の押え板（16）上のサセプタ
であり、熱板（12）と同材質からなり、基板（３）が載
置される。(18) is a housing for the sheet heating element (2) and is made of SUS3
It consists of 04. Reference numeral (19) is a susceptor on the upper holding plate (16), which is made of the same material as the heating plate (12) and on which the substrate (3) is placed.
そして、前記のように、サセプタ（19）が赤外線の透
過の良好な石英からなる場合、ヒータ（15）からの熱が
上側の押え板（16）及びサセプタ（19）を透過し、輻射
熱として基板（３）に伝達されるため、基板（３）をよ
り急速に加熱することができる。Then, as described above, when the susceptor (19) is made of quartz, which transmits infrared rays well, the heat from the heater (15) passes through the upper holding plate (16) and the susceptor (19) and is radiated to the substrate. Since it is transmitted to (3), the substrate (3) can be heated more rapidly.
なお、サセプタ（19）にカーボンを用いる場合は、サ
セプタ（19）の上面での温度の均一性をより向上するこ
とができる。When carbon is used for the susceptor (19), the temperature uniformity on the upper surface of the susceptor (19) can be further improved.
また、反応室（１）の雰囲気にH2,ハロゲンガス等が
ある場合は、サセプタ（19）として金属又はコーティン
グを行ったカーボンを用いてもよい。Further, when the atmosphere in the reaction chamber (1) contains H 2 , halogen gas, etc., metal or coated carbon may be used as the susceptor (19).
本発明は、以上説明したように構成されているので、
以下に記載する効果を奏する。Since the present invention is configured as described above,
The following effects are achieved.
熱板（12）の上面が複数個の扇形の区画（13）に等分
割され、各区画（13）毎に同心円状に折返した，横方向
に長寸の断面矩形状の溝（14）が形成され、その溝（1
4）に板体から打抜きにより形成され，横方向に長寸の
断面矩形状のヒータ（15）が埋設され、熱板（12）に赤
外線の透過の良好な石英からなる押え板（16）が重合さ
れているため、ヒータ（15）の円周方向の伸張が折返し
により相殺されて極めて小さく、熱板（12）の上面部，
即ち半径方向の溝（14）間の突部を破損することが防止
され、かつ、ヒータ（15）が扁平であるため、上側の押
え板（16）を破損することもなく、均一に加熱すること
ができる。The upper surface of the heat plate (12) is equally divided into a plurality of fan-shaped compartments (13), and each compartment (13) is concentrically folded to form a groove (14) having a rectangular cross-section that is long in the lateral direction. Formed its groove (1
A heater (15) having a rectangular cross section, which is formed by punching from a plate body in the horizontal direction, is embedded in the horizontal direction, and a holding plate (16) made of quartz, which transmits infrared rays well, is embedded in the heating plate (12). Since the heaters (15) are superposed, the circumferential expansion of the heater (15) is canceled by the folding back, which is extremely small.
That is, the protrusions between the radial grooves (14) are prevented from being damaged, and the heater (15) is flat, so that the upper holding plate (16) is not damaged and is uniformly heated. be able to.
とくに、円板状の熱板（12）の上面が、複数個の扇形
の区画（13）に等分割され、熱板（12）の上面が３個以
上に分割されているため、ヒータ（15）の円周方向の長
さが２分割よりも短く、ヒータ（15）の外側と内側との
長さの差がごく僅かであり、ヒータ（15）の熱膨張によ
る熱板（12）の上面部の破損を皆無にすることができ
る。In particular, the upper surface of the disk-shaped heat plate (12) is equally divided into a plurality of fan-shaped compartments (13), and the upper surface of the heat plate (12) is divided into three or more parts. ) Has a length in the circumferential direction of less than two, and the difference in length between the outside and inside of the heater (15) is very small, and the upper surface of the hot plate (12) due to thermal expansion of the heater (15). You can eliminate any damage to the parts.
その上、上側の押え板（16）が赤外線の透過の良好な
石英からなるため、ヒータ（15）が輻射によりサセプタ
（19）を加熱でき、急速加熱を可能とすることができ、
消費電力を大幅に削減することができる。Moreover, since the upper holding plate (16) is made of quartz, which transmits infrared rays well, the heater (15) can heat the susceptor (19) by radiation, which enables rapid heating.
Power consumption can be significantly reduced.
第１図ないし第４図は本発明の半導体製造装置の１実施
例の要部を示し、第１図は面状発熱体の一部破断平面
図、第２図は第１図の破断正面図、第３図は第２図の一
部の拡大図、第４図は面状発熱体を組込んだ状態の一部
の切断正面図、第５図は反応室の概略正面図、第６図な
いし第８図は従来例を示し、第６図は面状発熱体の一部
破断平面図、第７図は第６図の破断正面図、第８図は第
７図の一部の拡大図である。 （１）……反応室、（２）……面状発熱体、（３）……
基板、（12）……熱板、（13）……区画、（14）……
溝、（15）……ヒータ、（16）……押え板。1 to 4 show the essential parts of one embodiment of a semiconductor manufacturing apparatus of the present invention. FIG. 1 is a partially cutaway plan view of a sheet heating element, and FIG. 2 is a cutaway front view of FIG. 3, FIG. 3 is a partially enlarged view of FIG. 2, FIG. 4 is a partially cutaway front view showing a state where a sheet heating element is incorporated, FIG. 5 is a schematic front view of a reaction chamber, and FIG. 8 to FIG. 8 show a conventional example, FIG. 6 is a partially cutaway plan view of a planar heating element, FIG. 7 is a cutaway front view of FIG. 6, and FIG. 8 is an enlarged view of a part of FIG. Is. (1) ... Reaction chamber, (2) ... Sheet heating element, (3) ...
Substrate, (12) …… hot plate, (13) …… compartment, (14) ……
Groove, (15) …… Heater, (16) …… Holder plate.
Claims (1)
基板上で導入されたガスの化学反応を行わせ、前記基板
上に薄膜を形成するCVD,スパッタ等の半導体製造装置に
おいて、 前記面状発熱体を、上面を複数個の扇形の区画に等分割
した円板状の熱板と、前記各区画毎に中心部側から周縁
部側へと，周縁部側から中心部側へと，同心円状に折返
して形成された，横方向に長寸の断面矩形状の溝と、板
体から打抜きにより形成され，前記溝に埋設された横方
向に長寸の断面矩形状のヒータと、前記熱板上に重合さ
れ赤外線の透過の良好な石英からなる円板状の押え板と
により構成した半導体製造装置。1. A semiconductor manufacturing apparatus, such as CVD or sputtering, in which a substrate is provided on a planar heating element in a reaction chamber, a chemical reaction of a gas introduced on the substrate is performed, and a thin film is formed on the substrate. , A disk-shaped heat plate obtained by equally dividing the planar heating element into a plurality of fan-shaped compartments, and a central portion to a peripheral portion side and a peripheral portion side to a central portion side for each of the compartments. A groove having a rectangular cross-section that is long in the lateral direction and formed by folding back concentrically, and a heater that has a rectangular cross-section that is long in the horizontal direction and is formed by punching from a plate body and is embedded in the groove. And a disk-shaped holding plate made of quartz which is superposed on the hot plate and has good infrared ray transmission.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015861A JP2551182B2 (en) | 1990-01-25 | 1990-01-25 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015861A JP2551182B2 (en) | 1990-01-25 | 1990-01-25 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03220718A JPH03220718A (en) | 1991-09-27 |
| JP2551182B2 true JP2551182B2 (en) | 1996-11-06 |
Family
ID=11900584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015861A Expired - Fee Related JP2551182B2 (en) | 1990-01-25 | 1990-01-25 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2551182B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000277237A (en) * | 1999-03-24 | 2000-10-06 | Komatsu Ltd | Base board temperature control plate and controlling device fitted with the same |
| WO2004090960A1 (en) | 2003-04-07 | 2004-10-21 | Tokyo Electron Limited | Loading table and heat treating apparatus having the loading table |
| US20060011139A1 (en) * | 2004-07-16 | 2006-01-19 | Applied Materials, Inc. | Heated substrate support for chemical vapor deposition |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278322A (en) * | 1987-05-11 | 1988-11-16 | Fujitsu Ltd | Vapor growth device |
-
1990
- 1990-01-25 JP JP2015861A patent/JP2551182B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03220718A (en) | 1991-09-27 |
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