JPH0750272A - Method and equipment for manufacturing semiconductor - Google Patents

Abstract

PURPOSE:To realize the uniform working process of a semiconductor substrate, by uniformly mixing a plurality of kinds of reaction gas and introducing the mixed gas into a reaction chamber. CONSTITUTION:Just before a gas introducing inlet 2A of a reaction chamber 1, gas tubes 3A, 3B,... which send a plurality of kinds of reactant gas are connected with a gas introducing tube 2, directly or via a mixing chamber.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention introduces a plurality of types of reaction gases into a reaction chamber and diffuses them into a semiconductor substrate in the reaction chamber, CV
The present invention relates to a semiconductor manufacturing device for producing a D film.

[0002]

2. Description of the Related Art FIG. 3 shows a semiconductor manufacturing apparatus according to the present invention.
FIG. 1 is an explanatory simplified cross-sectional view showing the structure of an example, showing an example of a vertical low pressure CVD apparatus. In FIG. 3, reference numeral 1 denotes a reaction chamber, which is composed of outer and inner reaction tubes 6 and 7. Reference numeral 2 is a gas introduction tube for introducing a reaction gas, 5 is a heating coil arranged on the outer peripheral portion of the outer reaction tube 6, 8 is a boat carried into the reaction chamber 1, and 9 is a wafer mounted on the boat 8. 10 is a cap and 11 is an exhaust pipe. In the conventional apparatus, a boat 8 on which a large number of wafers 9 are placed is carried into the reaction chamber 1, a reaction gas is introduced into the reaction chamber 1 through a gas introduction pipe 2, and the outer and inner reaction pipes 6 and 7 are connected. After that, by exhausting from the exhaust pipe 11, the heating coil 5
The CVD film is formed on a large number of wafers 9 heated by.

[0003]

In the above-mentioned conventional example, when a plurality of types of reaction gases are introduced into the reaction chamber 1 to form a film, for example, two gas introduction pipes 2 as shown in FIG.
Since two kinds of reaction gases are separately introduced into the reaction chamber 1 at the same time by a and 2b and mixed, the gas mixing cannot be performed sufficiently uniformly, and the processing such as the uniform film formation on the wafer 9 is performed. There is a problem that you cannot do it.

[0004]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and is a method and apparatus for uniformly processing a semiconductor substrate. That is, the method of the present invention is characterized in that a plurality of kinds of reaction gases are mixed and introduced into the reaction chamber 1 immediately before the gas introduction port 2A of the reaction chamber 1. Further, in the apparatus of the present invention, gas pipes 3A, 3B ... Which send a plurality of kinds of reaction gases to the gas introduction pipe 2 directly or through the gas mixing chamber 4 are connected to the gas introduction port 2A of the reaction chamber 1 immediately before. I will do it.

[0005]

[Operation] Since the present invention has the above-described configuration, a plurality of types of reaction gases flow into the gas introduction pipe 2 from the respective gas pipes 3A, 3B, ... Immediately before being introduced into the reaction chamber 1. Are mixed or introduced into the gas mixing chamber 4 through the respective gas pipes 3A, 3B ... And mixed sufficiently, and the reaction gas mixed through the gas introduction pipe 2 is introduced into the reaction chamber 1. It will be introduced through mouth 2A.

[0006]

1 is a simplified cross-sectional plan view showing the structure of a first embodiment of the device of the present invention. In this first embodiment, gas pipes 3A and 3B for sending two kinds of reaction gases are connected to the gas introduction pipe 2 right in front of the gas introduction port 2A of the reaction chamber 1 so as to face each other. In the first embodiment, two kinds of reaction gases are supplied to the gas pipes 3A and 3B immediately before being introduced into the reaction chamber 1.
The mixed reaction gas flows out from the chamber, collides with each other, flows into the gas introduction pipe 2, is sufficiently mixed, and is introduced into the reaction chamber 1 through the gas introduction port 2A.

FIG. 2 is a simplified cross-sectional plan view showing the structure of the second embodiment. In this second embodiment, a gas mixing chamber 4 is connected to the gas introducing pipe 2 immediately before the gas introducing port 2A of the reaction chamber 1, and gas pipes 3A and 3B for sending two kinds of reaction gases to the gas mixing chamber 4 respectively. Are connected to face each other. This second
In the embodiment, the two kinds of reaction gases flow out from the respective gas pipes 3A and 3B immediately before the gas introduction port 2A of the reaction chamber 1 and collide with each other in the gas mixing chamber 4 so that they are sufficiently mixed. The reaction gas that has flowed out and mixed into the gas introduction pipe 2 is introduced into the reaction chamber 1 through the gas introduction port 2A.

In the first and second embodiments, since a plurality of kinds of reaction gases can be mixed sufficiently just before being introduced into the reaction chamber 1 as described above, the reaction gas mixed uniformly can be used. 1 can be introduced into the wafer, and processing such as film formation can be uniformly performed on the wafer.

[0009]

As described above, according to the present invention, the reaction chamber 1
Is connected to the gas inlet pipe 2 directly before or through the gas mixing chamber 4 to directly connect the gas inlets 2A, 3A, 3B ... Since the mixture can be sufficiently mixed immediately before being introduced into the reaction chamber 1, the uniformly mixed reaction gas can be introduced into the reaction chamber 1, and processing such as film formation is uniformly performed on the semiconductor substrate. be able to.

[Brief description of drawings]

FIG. 1 is a simplified cross-sectional plan view showing the configuration of a first embodiment of the device of the present invention.

FIG. 2 is a simplified cross-sectional plan view showing the configuration of the second embodiment.

FIG. 3 is a schematic sectional view for explaining the configuration of an example of a semiconductor manufacturing apparatus according to the present invention.

FIG. 4 is a simplified cross-sectional plan view showing the configuration of an example of a conventional device.

[Explanation of symbols]

 1 Reaction chamber 2 Gas introduction pipe 2A Gas introduction port 3A Gas pipe 3B Gas pipe 4 Gas mixing chamber

Claims (4)

[Claims] 1. A method for manufacturing a semiconductor, comprising mixing a plurality of types of reaction gases immediately before the gas introduction port (2A) of the reaction chamber (1) and introducing the mixture into the reaction chamber (1). 2. Semiconductor manufacturing in which gas pipes (3A, 3B ...) Sending a plurality of types of reaction gases are connected to the gas introduction pipe (2) immediately before the gas introduction port 2A of the reaction chamber (1). apparatus. 3. A gas mixing chamber (4) is connected to the gas introducing pipe (2) immediately before the gas introducing port (2A) of the reaction chamber (1), and a plurality of kinds of reaction gases are added to the gas mixing chamber (4). A semiconductor manufacturing apparatus in which gas pipes (3A, 3B, ...) For sending the respective are connected. 4. The semiconductor manufacturing apparatus according to claim 2, wherein the gas pipes (3A, 3B ...) Are arranged so that the reaction gases flowing out from them collide with each other.