JPS60223133A - Treater - Google Patents

Abstract

PURPOSE:To mix different treating fluids mutually in the whole treating chamber, and to accelerate a reaction uniformly by each forming paths, through which the treating fluids are flowed, in the treating chamber while several paths are arranged so that the fluids are blown off alternately. CONSTITUTION:In a low-pressure CVD device through which a PSG film is formed on a wafer, the inside of a treating chamber 1 is evacuated through an air outlet 5 when a plurality of wafers 7 are aligned and held to a jig 6 and a door 3 is closed, and the treating chamber 1 is heated by a heater 4. Consequently, a mixed gas 15 of SiH4 and PH3 is introduced to a first introducing path 13 and O2 gas 16 to a second introducing path 14 respectively on the outside of the treating chamber 1. Each gas introduced to the first and second introducing paths 13, 14 flows through a first path 9 and a second path 10, and is blown off severally in the approximately perpendicular downward direction from first small hole 11 groups and second small hole 12 groups bored to the first path 9 and the second path 10. Since the first small hole groups 11 and the second small hole groups 12 are mutually disposed alternately at that time, both gases are mixed extending over the whole in which the wafer 7 group is arranged in the treating chamber 1.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a processing technology, particularly a technology for processing a workpiece by utilizing reactions of different types of processing fluids. This invention relates to techniques that are effective for use in applying production membrane treatments.

[Background technology]

In semiconductor devices, PSG (Phos
ph.

CVD to produce 5ilicate Glass) film
As a device, monosilane (SiH2
) and phosphine (PH8) and oxygen (0,
) or an oxidizing gas such as nitrogen dioxide (NO!) is introduced, and a PSG film is formed on the wafer through a CVD reaction of these gases.

However, in such a CVD apparatus, the mixed gas and the oxidizing gas are mixed immediately after being blown out from a single inlet into the processing chamber, so the weakly bonded 5i-0 structure that is generated before the reaction is completed becomes PSG. The inventor of the present invention has revealed that there is a problem in that it is incorporated into the membrane, weakening the membrane quality.

Electronic materials 1 is a document that describes CVD equipment.
981 special edition (published by Kogyo Kenkyukai, November 10, 1981)
(Published on P77-P84).

[Purpose of the invention]

An object of the present invention is to provide a processing technique that can obtain good processing results.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, by providing passages through which different processing fluids flow inside the processing chamber and arranging the passages so that the fluids are alternately blown out, the different fluids are mixed with each other throughout the processing chamber and the reaction is completed. This is how it was done.

〔Example〕

Fig. 1 is a longitudinal cross-sectional view showing a low-pressure CVD apparatus which is an embodiment of the present invention, Fig. 2 is a cross-sectional view taken along the line - H in Fig. 4,
The figure is a cross-sectional view taken along the line 'T' in Figure 2.

In this embodiment, the low-pressure CVD apparatus is equipped with a processing chamber 1 that can maintain airtightness, and the processing chamber 1 is formed into a substantially disk-shaped tube 2 which is formed into a substantially cylindrical shape with one end closed with quartz glass. It is constructed by covering a door 3 that can be opened and closed. A heater 4 is disposed around the outer periphery of the tube 2 to heat the processing chamber 1, and a plurality of exhaust ports 5 are provided at the bottom of the tube 2 to exhaust the inside of the processing chamber 1 using a bonder or the like (not shown). It is set up so that you can get it. The processing chamber 1 is configured to accommodate and hold a boat-shaped jig 6 inserted through the door 3, and the jig 6 supports a plurality of wafers 7 as objects to be processed in parallel. It is configured to be able to be aligned and held.

In the upper part of the processing chamber 1, a passage structure 8 formed in a hollow, almost arched roof shape is arranged so as to closely cover the upper part of the group of wafers 7 held on the jig 6'. Inside the passage structure 8, first passages 9 and second passages 1o are alternately arranged next to each other and are formed in a comb-like shape that mesh with each other. 1st. A large number of small holes 11.12 serving as outflow ports are opened in the vertical direction on the lower surface of the second passage 9,100. 2nd aisle 9゜10
A first introduction path 13. which protrudes to the outside of the processing chamber 1 is provided at one end of each. The second introduction paths 14 are connected to each other.

Next, the operation will be explained. A plurality of wafers 7 are aligned and held in a jig 6, and the jig 6 is accommodated in the processing chamber 1 with the door 3 opened and placed there.

When the door 3 is closed, the inside of the processing chamber 1 is exhausted through the exhaust port 5, and the processing chamber 1 is heated by the heater 4, a mixed gas 1 of siH and PH8 is generated outside the processing chamber 1.
．． , 5 are introduced into the first introduction path 13 and 10 tons of gas 16 is introduced into the second introduction path 14, respectively.

1st. Each gas introduced into the second introduction path 13.14 is
Flowing through the passage 9 and the second passage 10, the first passage '9. Second
Air is blown out almost vertically downward from the first small hole 11 group and the second small hole 12 group opened in the passage 10JC. Blowout SiH and PH.

The gas and the Ot glass will be mixed, but since the first small hole group 11 and the second small hole group 12 are arranged alternately next to each other, the mixing of both gases will occur on the wafer in the processing chamber 1. This will occur throughout the 7 groups lined up. and,
Since the small holes open close to the upper edges of the wafers 7, mixing occurs in the vicinity of the wafers 7.

In this way, SiH4, PHs and 0. When mixed over the entire group of 7 wafers and at nearby positions,
The CVD reaction is completely performed on the wafer, and a PSG film with strong intermolecular bonds and good film quality is produced on the wafer. In particular, in the low-pressure CVD method, the film quality tends to be weak at the step portions on the wafer, but the film quality at the step portions becomes uniform.

In addition, since both gases 15 and 16 are blown out vertically downward from both groups of small holes 11 and 12, they flow parallel to the surface of the wafers 7, which are aligned parallel to each other while standing on the jig 6, maintaining a laminar flow state. As a result, the film quality becomes uniform over the entire surface of each wafer 7.

〔effect〕

(1) By configuring different processing fluids that react with each other to be mixed in the entire group to be treated, mixing can be performed in the entire group to be treated and the treatment reaction can be completed, resulting in improved strength, purity, etc. Good and uniform processing conditions can be obtained.

(By configuring a plurality of reaction gases that react and produce the 21PSG film to be mixed throughout the wafer group,
Because processing occurs uniformly across the wafer group, the CV
The D reaction can be completed, the phosphorus concentration, film quality, and thickness are uniform, the film strength is high including the step part, and the film contains
A good PSG film without intermediate products such as i-0 structure can be obtained.

(3) Since a PSG film with good film quality can be formed, PSG
It is possible to prevent the occurrence of cracks that may occur when a heat load is applied to the film.

(4) By flowing the processing fluid parallel to the surface of the object to be processed, the processing state can be made uniform over the entire surface of the object to be processed.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. For example, it is not limited to arranging two sets of channels in a comb-like shape.
Three or more sets of passages may be arranged alternately.

The processing fluid is not limited to a mixed gas of SiH4 and PH, or NO gas, but also 5itHa, 5tH4゜P Ha = AsH, and BtHe and 0. , N
o, etc. are also acceptable.

The processing is not limited to the production of a PSG film, but may also be processing such as the production of an As5G film, a BSG film, a BPSG film, or even a Sin film.

[Application field]

In the above explanation, the invention made by the present inventor was mainly applied to a low-pressure CVD apparatus that generates a PSG film on a certain wafer, which is the background field of application, but the invention is not limited to this. , for example, it can be applied to oxide film forming equipment, epitaxial equipment, etc.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal cross-sectional view showing an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line 1--2 in FIG. 1, and FIG. 3 is a cross-sectional view taken along line G in FIG. 2. 1...Processing chamber, 2...Tube, 3...Door, 4
...Heater, 5...Exhaust port, 6...Jig, 7...
・Unino・(processed object), 8...Passway structure, 9・
...First aisle, 10...Second aisle, 11.12...
Small hole (outlet), 13...first introduction path, 14...second introduction path. Figure 1

Claims (1)

[Scope of Claims] 1. A processing apparatus that processes a workpiece by introducing processing fluids that react with each other into a processing chamber, wherein a plurality of passages through which the processing fluids flow in the processing chamber are arranged alternately. arranged in
A processing apparatus characterized in that openings are provided in these passages so that each processing fluid flows out toward the object to be processed. 2. The processing device according to claim 1, characterized in that two sets of passages are provided and arranged in a comb-like shape that mesh with each other. 3. The processing apparatus according to claim 1, wherein the passage is provided close to the object to be processed; 4. The opening directs the processing fluid in a direction parallel to the surface of the object to be processed. The processing device according to claim 1, characterized in that the processing device is opened so that the water flows out.