JPH0729833A - Reaction gas supply port - Google Patents

Abstract

PURPOSE:To enhance the uniformity of mixture when a plurality of kinds of reaction gas are fed into the reaction chamber of a semiconductor fabrication system. CONSTITUTION:A plurality of gas sump holes 11, 12 communicate a plurality of gas introduction pipes 6, 7 and conduction holes 14, 15 conduct the interior of a reaction vessel 1. A plurality of kinds of reaction gas introduced through the plurality of introduction pipes flow into the sump holes 11, 12 and then diffused through the conduction holes 14, 15 into the reaction vessel 1. Consequently, the reaction gases fed through the plurality of conduction holes 14, 15 are mixed uniformly immediately upon supply.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction gas supply port for supplying two or more kinds of reaction gas to a reaction chamber of a semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art In a CVD apparatus, an epitaxial apparatus or the like in semiconductor manufacturing, two or more kinds of reaction gases are supplied to a reaction chamber.

A conventional reaction gas supply port will be described with reference to FIG.

FIG. 4 shows a reaction chamber of a single-wafer type semiconductor manufacturing apparatus. In the figure, 1 is a reaction container, 2 is a substrate to be processed loaded in the reaction container 1, and the substrate 2 is not shown. It is mounted on the substrate pedestal. A gate valve 3 for loading and unloading the substrate 2 to be processed is provided on the upstream side of the reaction vessel 1, and a reaction gas supply port 4 is provided on the upper surface of the reaction vessel 1 on the upstream side. An exhaust port 5 is provided on the downstream side of the reaction container 1. The reaction gas supply port 4 is connected to a plurality of (two in the figure) gas introduction pipes 6 and 7, and the exhaust port 5 is connected to an exhaust pipe 8.

The substrate 2 to be processed is passed through the gate valve 3.
Are introduced into the reaction container 1, two kinds of reaction gases are introduced from the gas introduction pipes 6 and 7, mixed at the reaction gas supply port 4, and then flowed into the reaction container 1 to obtain the substrate to be processed. A thin film is formed on the surface 2, and the exhaust gas is exhausted through the exhaust port 5 and the exhaust pipe 8.

[0006]

The uniformity of the film quality formed on the wafer is greatly influenced by whether or not the plurality of gases are uniformly mixed. However, it cannot be said that the conventional reaction gas supply port 4 sufficiently mixes, and the nonuniformity of the film quality caused by the nonuniformity of the mixed gas has been a problem.

[0007] Further, if importance is attached to the uniformity of mixing and an attempt is made to mix a plurality of gases in the pipe, a product is generated in the pipe,
This causes particles, and the particles float in the introduced gas to contaminate the substrate 2 to be processed.

In view of the above situation, the present invention aims to improve the uniformity of mixing when a plurality of reaction gases are supplied.

[0009]

According to the present invention, a plurality of gas introducing holes are respectively connected to a plurality of gas introducing pipes, and a communicating hole communicating with each of the gas collecting holes is provided. It is what

[0010]

The plurality of reaction gases introduced from the plurality of introduction pipes first flow into the gas reservoir holes, respectively, are further dispersed from the communication holes of the gas reservoir holes, flow into the reaction container, and flow out from the plurality of communication holes. The reaction gas is mixed uniformly immediately after flowing out.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

In FIG. 1, the same parts as those shown in FIG. 4 are designated by the same reference numerals.

An exhaust port 5 is provided at the downstream end of the reaction vessel 1.
And a reaction gas supply port 17 is provided at the upstream end of the reaction vessel 1. The reaction gas supply port 17 has a manifold 9 to which the gas introduction pipes 6 and 7 are connected and a mixing port 10 which is airtightly provided in the manifold 9.

As shown in FIG. 2, the manifold 9 has gas reservoir holes 11 and 12 whose both ends are closed as many as the gas introduction pipes 6 and 7. The gas introduction pipe 6,
7 communicates with the gas reservoir holes 11 and 12, respectively, and further, a plurality of small-diameter communication holes 14 and 15 that communicate with a gas mixing chamber 13 described later are formed in the manifold 9 with respect to the gas reservoir holes 11 and 12. Has been done. The mixing port 10 has a carry-in / carry-out hole 16 communicating with the inside of the reaction container 1 and the carry-in / carry-out hole 1
6 has the gas mixing chamber 13 communicating with 6.

Next, the operation will be described.

The reaction gases from the gas introduction pipes 6 and 7 flow into the gas reservoir holes 11 and 12, respectively, and further, the gas reservoir holes 11 and 1
The second gas is dispersed from the communication holes 14 and 15 and flows into the gas mixing chamber 13. Multiple reaction gases are mixed in gas chamber 1
Mixing is performed in No. 3, but as described above, since the gas flows into the gas mixing chamber 13 in a dispersed manner, the mixing is performed on average, and the uniformity of mixing is achieved.

The mixed reaction gas flows in the reaction container 1, forms a thin film on the surface of the substrate 2 to be processed, and is then exhausted through the exhaust port 5 and the exhaust pipe 8.

In this embodiment, as shown in FIG. 3, the communication holes 14 and 15 are formed at equal intervals. However, since the concentration distribution of the mixed gas in the reaction vessel 1 is changed, the communication holes are formed. 14, 1
The intervals of 5 may be unequal intervals, or the diameters of the communication holes 14 and 15 may be varied depending on the location, and the gas to be introduced is 3
In the case of a kind, the communication holes may be provided in three rows, and the gas introduction pipe may be connected to each communication hole. Needless to say, the mixing port 10 and the manifold 9 may be integrally formed, and various changes may be made without departing from the scope of the present invention.

[0019]

As described above, according to the present invention, the mixed gas can be uniformly supplied into the reaction vessel, the processing quality is improved, and the concentration distribution of the mixed gas in the reaction vessel is adjusted to a required state. It exhibits various excellent effects such as the possibility of

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a view on arrow A in FIG.

FIG. 3 is a view on arrow B in FIG.

FIG. 4 is a cross-sectional view showing a conventional example.

[Explanation of symbols]

 1 Reaction Container 2 Processed Substrate 9 Manifold 10 Mixing Port 11 Gas Reservoir 12 Gas Reservoir 13 Gas Mixing Chamber 14 Communication Hole 15 Communication Hole 17 Reaction Gas Supply Port

Claims (3)

[Claims] 1. A reaction gas supply port, comprising: a plurality of gas reservoir holes, each of which communicates with a plurality of gas introduction pipes; and a communication hole that communicates each of the gas reservoir holes with the inside of the reaction vessel. 2. The communication holes are arranged at irregular intervals.
Reaction gas supply port. 3. The reaction gas supply port according to claim 1, wherein the diameter of the communication hole is varied depending on the location.