KR0156145B1 - Process gas mixing and diffusing apparatus of low pressure chemical vapor deposition system for semiconductor fabrication process - Google Patents

Process gas mixing and diffusing apparatus of low pressure chemical vapor deposition system for semiconductor fabrication process Download PDF

Info

Publication number
KR0156145B1
KR0156145B1 KR1019950029210A KR19950029210A KR0156145B1 KR 0156145 B1 KR0156145 B1 KR 0156145B1 KR 1019950029210 A KR1019950029210 A KR 1019950029210A KR 19950029210 A KR19950029210 A KR 19950029210A KR 0156145 B1 KR0156145 B1 KR 0156145B1
Authority
KR
South Korea
Prior art keywords
reaction chamber
vapor deposition
chemical vapor
process gas
low pressure
Prior art date
Application number
KR1019950029210A
Other languages
Korean (ko)
Other versions
KR970017976A (en
Inventor
우창훈
Original Assignee
문정환
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체주식회사 filed Critical 문정환
Priority to KR1019950029210A priority Critical patent/KR0156145B1/en
Publication of KR970017976A publication Critical patent/KR970017976A/en
Application granted granted Critical
Publication of KR0156145B1 publication Critical patent/KR0156145B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

반도체 제조를 위한 저압화학기상 증착 공정시 투입되는 공정가스가 유동경로 상에서 충분히 고루 혼합된 후 반응챔버 내로 확산되어 웨이퍼 표면에 균일하게 증착될 수 있도록 한 것이다.The process gas introduced during the low pressure chemical vapor deposition process for semiconductor manufacturing is sufficiently mixed on the flow path and then diffused into the reaction chamber so as to be uniformly deposited on the wafer surface.

이를 위해, 본 발명은 반응챔버의 벽(1)에 공정가스가 균일하게 혼합되도록 하는 격자형 유동경로(2)가 형성되고, 상기 반응챔버의 혼합가스 유출구(3)측에는 복수개의 혼합가스 확산공(4)이 형성된 캡형 디퓨저(5)가 설치되는 반도체 제조공정용 저압화학기상증착 장비의 공정가스 믹싱 및 확산장치이다.To this end, the present invention is a grid-like flow path (2) is formed to uniformly mix the process gas on the wall (1) of the reaction chamber, a plurality of mixed gas diffusion holes on the mixed gas outlet (3) side of the reaction chamber A process gas mixing and diffusion device for a low pressure chemical vapor deposition apparatus for a semiconductor manufacturing process, in which a cap-shaped diffuser 5 in which (4) is formed is provided.

Description

반도체 제조공정용 저압화학기상증착 장비의 공정가스 믹싱 및 확산장치Process gas mixing and diffusion device for low pressure chemical vapor deposition equipment for semiconductor manufacturing process

제1도는 종래의 저압화학 기상증착 장비의 공정가스 분산장치를 나타난 종단면도.1 is a longitudinal sectional view showing a process gas dispersion device of a conventional low pressure chemical vapor deposition equipment.

제2도는 제1도의 A부 확대상세도.2 is an enlarged detail of part A of FIG.

제3도는 제1도의 디퓨저를 나타낸 사시도.3 is a perspective view of the diffuser of FIG.

제4도는 본 발명을 나타낸 종단면도.4 is a longitudinal sectional view showing the present invention.

제5도는 본 발명에 따른 디퓨저를 나타낸 사시도.5 is a perspective view showing a diffuser according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 반응챔버 벽 2 : 유동경로1: reaction chamber wall 2: flow path

3 : 혼합가스 유출구 4 : 혼합가스 확산공3: mixed gas outlet 4: mixed gas diffusion hole

5 : 디퓨저5: diffuser

본 발명은 반도체 제조공정용 저압화학기상증착(LPCVD : Low Pressure Chemical Vapour Deposition)장비의 공정가스 믹싱 및 확산장치에 관한 것으로, 더욱 상세하게는 저압화학기상증착 공정에 투입되는 공정가스가 유동경로 상에서 충분히 혼합(mixing)될 수 있도록 하는 한편, 반응챔버 내로 유입된 혼합가스(Mixing Gas)에 의해 증착물질이 웨이퍼 표면에 균일하게 증착될 수 있도록 한 것이다.The present invention relates to a process gas mixing and diffusion apparatus of a low pressure chemical vapor deposition (LPCVD) equipment for a semiconductor manufacturing process, and more particularly, a process gas introduced into a low pressure chemical vapor deposition process is flowed on a flow path. While allowing sufficient mixing, the deposition material is uniformly deposited on the wafer surface by the mixing gas introduced into the reaction chamber.

일반적으로, 화학기상증착(CVD)장치는 특정의 반응가스들을 반응용기 속에 계속 주입하면서 적절한 조건을 유지시켜 주면 고체상의 물질이 생성되어 가공하고자 하는 물체위에 내려 쌓이게(증착)되는 현상을 이용하여 반도체 제조공정에 필요한 물질의 막을 웨이퍼 표면위에 증착시키는 장치이다.In general, chemical vapor deposition (CVD) devices use semiconductor phenomena to produce solid materials by depositing certain reaction gases into the reaction vessel and maintaining the proper conditions. It is a device for depositing a film of material necessary for the manufacturing process on the wafer surface.

또한, 상기 화학기상증착법은 온도범위, 증착압력, 반응챔버의 구조 및 반응챔버벽의 온도와 에너지원 그리고 증착막의 종류 및 반응기체의 종류 등에 따라 여러가지로 분류할 수 있다.In addition, the chemical vapor deposition method may be classified into various types according to the temperature range, the deposition pressure, the structure of the reaction chamber, the temperature and energy source of the reaction chamber wall, the type of the deposition film, and the type of the reactor.

한편, 저압화학기상증착 장치는 반응챔버 내를 일정한 저압상태로 유지시키는 한편, 웨이퍼를 적당한 온도로 유지시켜 주면 공정가스의 화학반응에 의해 생성된 반응물질이 일정한 속도로 웨이퍼 표면에 증착된다.On the other hand, the low pressure chemical vapor deposition apparatus maintains the inside of the reaction chamber at a constant low pressure state, while keeping the wafer at an appropriate temperature, the reactants generated by the chemical reaction of the process gas is deposited on the wafer surface at a constant rate.

이 저압화학기상 증착장치의 가장 큰 특징은 반응챔버 내의 압력(증착압력)이 200∼700 mTorr로 저압이라는 것과, 단순히 열에너지에 의해 반응이 진행된다는데 있으며, 증착막의 균일도 및 스텝 커버리지(Step Coverage)가 좋을 뿐만 아니라, 양질의 증착막을 한꺼번에 많은 양의 웨이퍼(50∼200장)위에 증착시킬 수 있으므로 생산원가가 낮은 공정을 가능하게 한다는 장점이 있다.The main characteristic of this low pressure chemical vapor deposition apparatus is that the pressure (deposition pressure) in the reaction chamber is 200 to 700 mTorr at low pressure, and the reaction proceeds simply by thermal energy, and the uniformity and step coverage of the deposited film Not only is it good, it is possible to deposit a high quality deposition film on a large amount of wafers (50 to 200 sheets) at once, there is an advantage that allows a low cost production process.

종래의 저압화학기상증착 장비는 제1도 내지 제3도에 나타낸 바와같이, 각각의 공급라인(6a)(6b)을 통해 공급되는 WF6(육플루오르화 텅스텐)와 DCS(다이클로로사이렌 ; SiHzClz)가 반응챔버의 벽(1a)내에서 혼합되어 저진공화된 반응챔버 내부로 유입되므로써 웨이퍼(8)표면에 반응물질을 증착시키게 되는데, 이를 간략히 살펴보면 다음과 같다.Conventional low pressure chemical vapor deposition apparatus, as shown in FIG. To FIG. 3 of claim 1, WF 6 (six fluorinated tungsten) and DCS (dichloro siren to be supplied through each supply line (6a) (6b); SiHzClz ) Is mixed in the wall 1a of the reaction chamber and introduced into the low-vacuum reaction chamber to deposit a reactant on the surface of the wafer 8, which is briefly described as follows.

먼저, 반응챔버의 벽(1a)내에서 혼합된 공정가스는 반응챔버의 벽(1a)을 빠져나가면서 1차적으로 디퓨저(7a)의 내측면에 부딪힌 후 유동경로를 바꾸게 된다.First, the process gas mixed in the wall 1a of the reaction chamber first hits the inner surface of the diffuser 7a while exiting the wall 1a of the reaction chamber, thereby changing the flow path.

이에따라, 반응챔버 내의 고정척(9)위에 로딩(loading)되어 미리 예열된 웨이퍼(8) 표면에서 혼합된 공정가스가 화학반응을 일으켜 WSi(텅스텐 실리사이드)박막을 형성하게 된다.Accordingly, the process gas mixed on the surface of the preheated wafer 8 by loading onto the fixed chuck 9 in the reaction chamber causes a chemical reaction to form a WSi (tungsten silicide) thin film.

그러나, 이와같은 종래의 저압화학기상증착 장치는 반응챔버 벽(1)내의 가스유동경로(2a)가 짧아 두 공정가스가 충분히 혼합되지 않은 상태에서 공정이 진행되므로인해 웨이퍼(8) 표면에 증착된 WSi 박막의 조성이 불량하게 되는 단점이 있었다.However, such a conventional low pressure chemical vapor deposition apparatus is deposited on the surface of the wafer 8 because the gas flow path 2a in the reaction chamber wall 1 is short and the process proceeds in a state where the two process gases are not sufficiently mixed. There was a disadvantage that the composition of the WSi thin film is poor.

또한, 반응챔버 내부에 설치된 디퓨져(7a)로 인해 혼합가스의 유동상태에 불균형이 발생되어 웨이퍼(8)표면에 증착된 WSi 박막의 균일성(Uniformity)을 나쁘게 할 뿐만 아니라, 완전히 혼합되지 않는 가스가 디퓨져(7a)내면에 반응하여 증착된 경우에는 공정진행 중 디퓨저(7a)내면에 증착된 막이 들떠 일어나 파티클(Particle)을 이루어 재 유동하여 웨이퍼(8)표면에 부착되므로써 역시 WSi 막의 균일성을 해치게 되므로 인해 웨이퍼의 수율을 저하시키게 되는 등 많은 문제점이 있었다.In addition, the diffuser 7a installed inside the reaction chamber causes an imbalance in the flow state of the mixed gas, which not only degrades the uniformity of the WSi thin film deposited on the surface of the wafer 8, but also does not completely mix the gas. Is deposited on the inner surface of the diffuser 7a, the film deposited on the inner surface of the diffuser 7a rises during the process, forms particles, reflows, and adheres to the surface of the wafer 8 so that uniformity of the WSi film can be obtained. Since there is a lot of problems, such as to lower the yield of the wafer due to harm.

본 발명은 상기한 제반 문제점을 해결하기 위한 것으로서, 저압화학기상증착 공정시 투입되는 공정가스가 유동경로 상에서 충분히 혼합된 후 반응챔버 내로 고르게 확산되어 웨이퍼 표면에 균일하게 증착될 수 있도록 하므로써 공정수율을 향상시킬 수 있는 반도체 제조공정용 저압화학기상증착 장비의 공정가스 믹싱 및 확산장치를 제공하는데 그 목적이 있다.The present invention is to solve the above-mentioned problems, the process gas introduced during the low-pressure chemical vapor deposition process is sufficiently mixed on the flow path and then evenly diffused into the reaction chamber to be uniformly deposited on the surface of the wafer process yield It is an object of the present invention to provide a process gas mixing and diffusion device for low pressure chemical vapor deposition equipment for semiconductor manufacturing processes that can be improved.

상기한 목적을 달성하기 위해 본 발명은 반응챔버의 벽에 공정가스가 균일하게 혼합되도록 하는 격자형 유동경로가 형성되고, 상기 반응챔버의 혼합가스 유출구 측에는 복수개의 혼합가스 확산공이 형성된 캡형 디퓨저가 설치되는 반도체 제조공정용 저압화학기상증착 장비의 공정가스 믹싱 및 확산장치이다.In order to achieve the above object, the present invention provides a grid-like flow path for uniformly mixing process gas on the wall of the reaction chamber, and a cap-type diffuser having a plurality of mixed gas diffusion holes formed on the mixed gas outlet side of the reaction chamber. Process gas mixing and diffusion device of low pressure chemical vapor deposition equipment for semiconductor manufacturing process.

이하, 본 발명의 일실시예를 첨부도면 제4도 및 제5도를 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 4 and 5.

제4도는 본 발명을 나타낸 종단면도이고, 제5도는 본 발명에 따른 디퓨저를 나타낸 사시도로서, 반도체 제조용 저압화학기상 증착장착 장비의 반응챔버 벽(1)내에 투입된 두 공정가스가 균일하게 혼합되도록 하는 격자형의 유동경로(2)가 반복 형성되고, 상기 반응챔버 벽(1)의 혼합가스 유출구(3)측 벽면에는 복수개의 혼합가스 확산공(4)이 형성된 캡(Cap)형 디퓨저(5)가 설치되어 구성된다.FIG. 4 is a longitudinal sectional view showing the present invention, and FIG. 5 is a perspective view showing the diffuser according to the present invention, in which two process gases introduced into the reaction chamber wall 1 of the low pressure chemical vapor deposition apparatus for manufacturing a semiconductor are uniformly mixed. A grid-shaped flow path 2 is formed repeatedly, and a cap-type diffuser 5 having a plurality of mixed gas diffusion holes 4 formed on the side wall of the mixed gas outlet 3 of the reaction chamber wall 1. Is installed and configured.

이와같이 구성된 본 발명은 제4도 및 제5도에 나타낸 바와같이, 각각의 공급라인(6a)(6b)을 통해 공급되는 WF6와 DCS가 반응챔버 벽(1)내의 격자형 유동경로(2)를 지나면서 서로 혼합되어 혼합가스 유출구(3)를 통해 빠져나가게 된다.In the present invention thus constructed, as shown in FIGS. 4 and 5, the WF 6 and the DCS supplied through the respective supply lines 6a and 6b have a lattice flow path 2 in the reaction chamber wall 1. The mixture is mixed with each other while passing through the mixed gas outlet 3.

이때, 격자형 유동경로(2)는 그 기하학적 구조상 공정가스들이 충분히 고루섞일 수 있는 길고 복잡한 경로이므로 종래와 같이 고루혼합되지 않은 상태로 반응챔버 내로 유입되는 현상을 방지할 수 있게된다.At this time, since the lattice flow path 2 is a long and complicated path through which the process gases are sufficiently evenly mixed due to its geometric structure, the lattice flow path 2 can be prevented from flowing into the reaction chamber without being evenly mixed as in the prior art.

또한, 상기 반응챔버 벽(1)의 격자형 유동경로(2)주위에는 냉각수 순환경로(7)를 부가적으로 설치하여 반응챔버 내부온도의 열적 영향으로 인해 공정가스가 반응하지 않도록 유동경로(2)상의 공정가스 온도를 낮추어 준다.In addition, a cooling water circulation path 7 is additionally installed around the grid-shaped flow path 2 of the reaction chamber wall 1 so that the process gas does not react due to the thermal effect of the internal temperature of the reaction chamber. Reduce the process gas temperature on

한편, 상기한 바와같이 격자형 유동경로(2)를 통과하면서 고루 혼합되어 혼합가스 유출구(3)를 통해 반응챔버 내부로 배출된 혼합가스는 디퓨저(5)에 형성된 각각의 확산공(4)을 통해 빠져나와 확산되어 미리 예열된 웨이퍼(8)표면에서 반응하여 균일한 WSi 막을 형성하게 된다.Meanwhile, as described above, the mixed gas that is mixed evenly while passing through the lattice flow path 2 and discharged into the reaction chamber through the mixed gas outlet 3 is formed in each of the diffusion holes 4 formed in the diffuser 5. It exits through and diffuses and reacts on the preheated wafer 8 surface to form a uniform WSi film.

따라서, 본 발명은 일차적으로 공정가스 유동경로(2)의 기하학적 형상을 격자형으로 하여 혼합경로를 충분히 확보하므로써 두 공정가스가 고루 섞일 수 있도록 한후, 디퓨저(5)의 확산공(4)으로 고른 확산이 이루어져 균일한 박막이 웨이퍼(8)표면에 형성될 수 있도록 하므로써 웨이퍼(8)의 공정수율을 향상시킬 수 있는 효과를 가져오게 된다.Therefore, in the present invention, the geometry of the process gas flow path 2 is first made into a lattice shape so that the two process gases are evenly mixed by sufficiently securing the mixing path, and then the diffusion holes 4 of the diffuser 5 are selected. The diffusion is made so that a uniform thin film can be formed on the surface of the wafer 8, thereby bringing an effect of improving the process yield of the wafer 8.

또한, 반응챔버 벽(1)내의 공정가스 유동경로(2) 주위에 냉각수 순환경로(7)가 형성되어 순환하는 냉각수가 공정가스의 온도를 낮추므로써 유동경로(2)상에서의 공정가스반응을 억제시켜 디퓨저(5)내면에 반응물질이 증착되는 현상을 방지할 수 있으므로 인해 디퓨저(5)내면의 박막들뜸(Peeling)현상을 미연에 방지할 수 있게된다.In addition, a coolant circulation path 7 is formed around the process gas flow path 2 in the reaction chamber wall 1 to suppress the process gas reaction on the flow path 2 by lowering the temperature of the process gas. By preventing the phenomenon in which the reactants are deposited on the inner surface of the diffuser 5, the phenomenon of thin film peeling on the inner surface of the diffuser 5 can be prevented.

뿐만 아니라, 설령 디퓨저(5)내면에 박막이 형성되어 박막들뜸 현상이 일어나더라도 디퓨저(5)내면에서 떨어져 나온 파티클이 디퓨저(5)밖으로 빠져나오지 못하므로 인해 웨이퍼(8)에 증착되는 WSi 막의 균일성을 확보할 수 있게된다.In addition, even if the thin film is formed on the inner surface of the diffuser (5), even if the thin film floating phenomenon occurs, the particles separated from the inner surface of the diffuser (5) can not escape out of the diffuser (5) due to the uniformity of the WSi film deposited on the wafer (8) The castle can be secured.

이상에서와 같이, 본 발명은 반도체 제조를 위한 저압화학기상 증착공정시 투입되는 공정가스가 유동경로(2)상에서 충분히 고루 혼합된 후 반응챔버 내로 고르게 확산되어 웨이퍼(8)표면에 균일하게 증착될 수 있도록 하므로써 웨이퍼(8)의 수율을 향상시킬 수 있도록 한 매우 유용한 발명이다.As described above, in the present invention, the process gas introduced during the low pressure chemical vapor deposition process for semiconductor manufacturing is sufficiently evenly mixed on the flow path 2 and then evenly diffused into the reaction chamber to be uniformly deposited on the surface of the wafer 8. It is a very useful invention which makes it possible to improve the yield of the wafer 8 by making it possible.

Claims (2)

반응챔버의 벽에 공정가스가 균일하게 혼합되도록 하는 격자형 유동경로가 형성되고, 상기 반응챔버의 혼합가스 유출구측에는 복수개의 혼합가스 확산공이 형성된 캡형 디퓨저가 설치되는 것을 특징으로 하는 반도체 제조공정용 저압화학 기상증착 장비의 공정가스 믹싱 및 확산장치.Low pressure for the semiconductor manufacturing process, characterized in that the lattice flow path for uniformly mixing the process gas is formed on the wall of the reaction chamber, the cap-shaped diffuser having a plurality of mixed gas diffusion hole is installed on the mixed gas outlet side of the reaction chamber Process gas mixing and diffusion equipment for chemical vapor deposition equipment. 제1항에 있어서, 상기 반응챔버 벽의 격자형 유동경로 주위에는 냉각수 순환경로가 설치되어 있는 반도체 제조공정용 저압화학기상증착 장비의 공정가스 믹싱 및 확산장치.The process gas mixing and diffusion device of claim 1, wherein a cooling water circulation path is provided around the grid flow path of the reaction chamber wall.
KR1019950029210A 1995-09-06 1995-09-06 Process gas mixing and diffusing apparatus of low pressure chemical vapor deposition system for semiconductor fabrication process KR0156145B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950029210A KR0156145B1 (en) 1995-09-06 1995-09-06 Process gas mixing and diffusing apparatus of low pressure chemical vapor deposition system for semiconductor fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950029210A KR0156145B1 (en) 1995-09-06 1995-09-06 Process gas mixing and diffusing apparatus of low pressure chemical vapor deposition system for semiconductor fabrication process

Publications (2)

Publication Number Publication Date
KR970017976A KR970017976A (en) 1997-04-30
KR0156145B1 true KR0156145B1 (en) 1998-12-01

Family

ID=19426277

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950029210A KR0156145B1 (en) 1995-09-06 1995-09-06 Process gas mixing and diffusing apparatus of low pressure chemical vapor deposition system for semiconductor fabrication process

Country Status (1)

Country Link
KR (1) KR0156145B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100712496B1 (en) * 2001-09-21 2007-05-02 삼성전자주식회사 Gas diffuser of apparatus for chemical vapor deposition for manufacturing semiconductor

Also Published As

Publication number Publication date
KR970017976A (en) 1997-04-30

Similar Documents

Publication Publication Date Title
KR100332314B1 (en) Reactor for depositing thin film on wafer
US6444262B1 (en) Thermal processing unit and thermal processing method
KR100436941B1 (en) apparatus and method for depositing thin film
KR100731164B1 (en) Apparatus of chemical vapor deposition with a shower head and method therof
EP1452626B9 (en) Mixer, and device and method for manufacturing thin film
US4694778A (en) Chemical vapor deposition wafer boat
US5773100A (en) PECVD of silicon nitride films
US5561087A (en) Method of forming a uniform thin film by cooling wafers during CVD
KR100661198B1 (en) Method and apparatus for processing semiconductive wafers
KR100273602B1 (en) Manufacturing Method of Semiconductor Device
WO2001004376A9 (en) A method of forming a silicon nitride layer on a semiconductor wafer
US6506255B2 (en) Apparatus for supplying gas used in semiconductor processing
US7304002B2 (en) Method of oxidizing member to be treated
KR0156145B1 (en) Process gas mixing and diffusing apparatus of low pressure chemical vapor deposition system for semiconductor fabrication process
US4548159A (en) Chemical vapor deposition wafer boat
KR100712496B1 (en) Gas diffuser of apparatus for chemical vapor deposition for manufacturing semiconductor
CN212175035U (en) Gas spray head assembly for chemical vapor deposition equipment
JP2751015B2 (en) Processing method of the object
KR940007175Y1 (en) Low pressure cvd apparatus of wafer
US4641604A (en) Chemical vapor deposition wafer boat
KR200157137Y1 (en) A cvd apparatus for semiconductor device fabrication
CN118109805A (en) Film forming device
KR20040017255A (en) apparatus and method for depositing thin film
JPH03151629A (en) Manufacturing equipment for semiconductor thin film and manufacture of semiconductor multilayer thin film
KR100203052B1 (en) A cvd apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100624

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee