CN117987806A - Gas distribution member, gas conveying device and film processing device - Google Patents
Gas distribution member, gas conveying device and film processing device Download PDFInfo
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- CN117987806A CN117987806A CN202211336298.4A CN202211336298A CN117987806A CN 117987806 A CN117987806 A CN 117987806A CN 202211336298 A CN202211336298 A CN 202211336298A CN 117987806 A CN117987806 A CN 117987806A
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- 238000009826 distribution Methods 0.000 title claims abstract description 184
- 238000012545 processing Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 180
- 230000008569 process Effects 0.000 claims abstract description 176
- 238000009792 diffusion process Methods 0.000 claims abstract description 137
- 230000002093 peripheral effect Effects 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 629
- 238000012546 transfer Methods 0.000 claims description 116
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 238000005507 spraying Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 9
- 230000000712 assembly Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 12
- 238000012423 maintenance Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 55
- 239000010408 film Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 238000004381 surface treatment Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000009827 uniform distribution Methods 0.000 description 4
- 230000000994 depressogenic effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
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- 238000005240 physical vapour deposition Methods 0.000 description 1
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Abstract
The invention discloses a gas distribution member, a gas conveying device and a film processing device, wherein a gas diffusion channel and an edge gas inlet channel positioned at the periphery of the gas diffusion channel are arranged in the gas distribution member, the gas diffusion channel comprises a concave part, the bottom surface of the concave part protrudes out of the bottom surface of the gas distribution member, the concave part divides the area below the bottom surface of the gas distribution member into an inner area and a peripheral area, the concave part comprises a first side wall and a second side wall which encircle the inner area, the first side wall and the second side wall are respectively provided with the gas inlet channel so as to be respectively communicated with the inner area and the peripheral area, and the edge gas inlet channel is communicated with the peripheral area. The advantages are that: the gas distribution member conveys the process gas to the inner area through the gas diffusion channel, and simultaneously conveys the process gas to the peripheral area through the gas diffusion channel and the edge gas inlet channel, so that the edge gas flow attenuation effect is effectively compensated, and the flow and distribution uniformity of the process gas and the maintenance of a high flow speed state are ensured.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a gas distribution member, a gas conveying device and a film processing device.
Background
In the process of manufacturing semiconductor devices, the micro-processing of semiconductor process elements or wafer substrates is often performed by adopting the process modes of plasma etching, physical vapor deposition, chemical vapor deposition and the like. The micromachining process is typically performed in a vacuum reaction chamber, and a process gas is introduced into the vacuum reaction chamber to activate the process gas by external input of energy, thereby performing a process treatment on the surface of a semiconductor process or wafer substrate.
With the vigorous development of semiconductor technology and the increasing integration of devices, the size of a chip is lower, and in order to ensure the quality of the chip, the process requirements of the semiconductor are more and more strict. Although the performance of the film processing device is greatly improved after multiple updating, the film processing device still has a plurality of defects in the aspect of uniformity of film processing, and particularly, along with the increasing of the size of wafers, the conventional gas phase processing method and equipment have difficulty in meeting the uniformity requirement of film processing.
In the wafer processing process, various process conditions affect the quality of the wafer surface treatment, such as the flow and distribution of the process gas in the reaction chamber, the temperature distribution of the process gas, the heating temperature field of the wafer, and the pressure distribution in the reaction chamber, which directly determine the quality of the wafer processing and production. If the process environment of the reaction area in the reaction chamber is not completely consistent, the phenomenon of uneven wafer surface treatment effect (such as uneven wafer surface film treatment thickness, uneven components and uneven physical characteristics) can be caused, so that the yield of wafer production is reduced. In practical application, the process environment in the reaction cavity is often complex, and the optimal condition coordination of various factors is difficult to realize. For example, in some processes, it is desirable to alternately deliver multiple process gases into the reaction chamber, to quickly change between at least two process gases in a short period of time, and to achieve uniform distribution in a short period of time. However, when the conventional thin film processing apparatus is used to perform the above-mentioned process, the flow rate and the flow rate of the process gas supplied from the center region and the edge region of the showerhead of the gas supply apparatus are generally different, so that the uniformity of the process gas distribution over the wafer is poor, and thus the effect of the surface treatment of the wafer is uneven, and the productivity thereof is reduced. Therefore, how to optimize the process conditions in the process to the co-conditions is a need to solve the problem in order to improve the quality of the wafer processing and the repeatability between different semiconductor processing devices.
Disclosure of Invention
The invention aims to provide a gas distribution member, a gas conveying device and a film processing device, wherein a gas diffusion channel and an edge gas inlet channel are arranged in the gas distribution member, the gas diffusion channel comprises a concave part, the concave part divides a region below the bottom surface of the gas distribution member into an inner region and a peripheral region, the concave part comprises each gas inlet channel which is respectively communicated with the inner region and the peripheral region, and the edge gas inlet channel is communicated with the peripheral region. The gas distribution member conveys the process gas to the inner area through the gas diffusion channel, and simultaneously conveys the process gas to the peripheral area through the gas diffusion channel and the edge air inlet channel, so that the edge air flow attenuation effect of the peripheral area is effectively compensated, the stable and rapid conveying of the process gas under higher flow is realized based on the flow convection and diffusion principles, the process gas distribution can reach good uniformity in a short time, the uniformity of the flow distribution of the process gas conveyed into the cavity is further ensured, the quality of wafer surface treatment is improved, and the yield of wafer production is improved.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
The utility model provides a gas distribution spare, be provided with gas diffusion passageway and be located the peripheral edge inlet channel of gas diffusion passageway in the gas distribution spare, gas diffusion passageway includes a bottom surface protrusion in the depressed part of gas distribution spare bottom surface, the depressed part will the region segmentation of gas distribution spare bottom surface below is interior region and peripheral area, the depressed part is including encircleing the first lateral wall of interior region and encircle the second lateral wall of first lateral wall, the inlet channel has been seted up on first lateral wall and the second lateral wall respectively in order to communicate with interior region and peripheral region respectively, edge inlet channel with peripheral region intercommunication.
Optionally, the gas diffusion channel and the edge gas inlet channel divide the gas distribution member into a central region inside the gas diffusion channel, an edge region outside the edge gas inlet channel, and an intermediate region between the central region and the edge region.
Optionally, the upper surface of the gas distribution member further comprises a heat transfer assembly comprising one or more heat transfer elements.
Optionally, the heat transfer element is in a fan ring structure or a discontinuous ring structure or a rectangular structure or a square structure.
Optionally, the width of the fan ring structure is 2 times or more of the length of the inner arc.
Optionally, each heat transfer element is circumferentially disposed.
Optionally, the gas distribution member comprises a layer or a plurality of layers of heat transfer components arranged in sequence from inside to outside, each layer of heat transfer components comprising a plurality of openings.
Optionally, when the number of layers of the heat transfer assemblies is greater than or equal to 2, the azimuth angles corresponding to the opening positions of at least two layers of the heat transfer assemblies are different.
Optionally, at least two layers of heat transfer components are arranged between the edge gas inlet channel and the gas diffusion channel, and the number of the openings of the heat transfer components close to the edge gas inlet channel is greater than or equal to that of the openings of the heat transfer components close to the gas diffusion channel.
Optionally, the heat transfer assembly is disposed above the central region and/or the intermediate region.
Optionally, the height of the top surface of the middle region is greater than or equal to the height of the top surface of the central region;
and/or the height of the top surface of the edge region is higher than the height of the top surface of the middle region.
Optionally, the edge air inlet channel is a continuous annular channel or a plurality of discontinuous arc-shaped section channels, and the annular channel or the arc-shaped section channels are communicated with the peripheral area through air inlet through holes;
or, the edge air inlet channel is a through hole structure, and the through hole structure is communicated with the peripheral area.
Optionally, the channel width of the gas diffusion channel is 0.1-10 times of the channel width of the edge gas inlet channel.
Optionally, the distance between the first side wall of the concave part and the central axis of the gas distributing piece is 10% -90% of the radius of the gas distributing piece.
Optionally, the distance between the edge gas inlet channel and the central axis of the gas distribution member is 15% -100% of the radius of the gas distribution member.
Optionally, a gas delivery device comprises:
A cover plate provided with an air supply channel;
The gas distribution member is positioned below the cover plate, and the gas supply channel of the cover plate is communicated with the gas diffusion channel;
The gas spraying disc is positioned below the gas distribution part and provided with a plurality of gas through holes;
The upper surface of the gas spraying disc and the inner area below the gas distribution part form a central gas diffusion area, the upper surface of the gas spraying disc and the outer area below the gas distribution part form an edge gas diffusion area, gas in the gas diffusion channel respectively enters the central gas diffusion area and the edge gas diffusion area through gas inlet channels on the first side wall and the second side wall, gas in the edge gas inlet channels enters the edge gas diffusion area, and the gas in the central gas diffusion area and the gas in the edge gas diffusion area respectively flow out through gas through holes on the gas spraying disc below.
Optionally, a heat transfer component is disposed between the cover plate and the gas distribution member, and the heat transfer component is used for transferring heat between the cover plate and the gas distribution member.
Optionally, the heat transfer component is disposed at the bottom of the cover plate;
And/or the heat transfer component is arranged on the upper surface of the gas distribution component;
and/or the heat transfer assembly is a separate component disposed between the cover plate and the gas distribution member;
the heat transfer assembly is in contact with the cover plate and the gas distribution member, respectively.
Optionally, a thin film processing apparatus includes:
A vacuum reaction chamber comprising a top cover and a chamber body;
And the gas conveying device is connected with the top cover and is used for conveying process gas into the vacuum reaction cavity.
Optionally, a heating component is arranged inside the top cover and/or the cover plate.
Optionally, the gas delivery device is used for alternately and circularly delivering the reaction gas and the purge gas to the interior of the vacuum reaction cavity.
Compared with the prior art, the invention has the following advantages:
In the gas distribution member, the gas conveying device and the film processing device thereof, the gas distribution member is provided with the gas diffusion channel and the edge gas inlet channel, the gas diffusion channel comprises the concave part, the concave part divides the area below the bottom surface of the gas distribution member into the inner area and the peripheral area, the concave part comprises the first gas inlet channel and the second gas inlet channel which output the process gas in different directions/areas, the process gas in the inner area is input through the first gas inlet channel, the process gas in the peripheral area is input through the second gas inlet channel and the edge gas inlet channel, the edge gas flow attenuation effect of the peripheral area is effectively compensated, the distribution uniformity of the process gas is effectively improved based on the principles of flow convection and diffusion, the process gas distribution conveyed to the surface of a wafer is more uniform, the quality of wafer surface processing is ensured, and the yield of wafer production is improved; on the other hand, the process gas conveyed by the gas distribution member can still keep higher flow speed in the conveying process, so that the throughput of the process gas in a short time can be increased while the uniformity of the distribution of the process gas is ensured, and the wafer production yield is improved.
Furthermore, the gas conveying device is further provided with the heat transfer component between the gas distribution member and the cover plate, the heat transfer component is used for heat exchange between the cover plate and the gas distribution member, the temperature distribution uniformity of each region of the gas distribution member is improved, the temperature response time (especially in the initial stage of temperature change) is shortened, the influence of the temperature difference of different regions of the gas distribution member on the temperature distribution uniformity of process gas is avoided, and the wafer production yield is guaranteed. The gas conveying device ensures the flow distribution uniformity of the process gas, ensures the temperature field uniformity of the process gas, balances the heat transfer and flow distribution requirements of the process gas, and further ensures the uniformity of wafer surface treatment.
Drawings
FIG. 1 is a schematic view of a film processing apparatus according to the present invention;
FIG. 2 is a schematic view of a gas delivery device according to the present invention;
FIG. 3 is a schematic cross-sectional view of a gas delivery device according to the present invention;
FIG. 4 is an enlarged partial schematic view of FIG. 3;
FIG. 5 is a schematic top perspective view of a gas distribution member of the present invention;
FIG. 6 is a schematic view of a semi-cutaway perspective of the gas distribution member of FIG. 5;
FIG. 7 is a top view of a gas distribution member of the present invention;
FIG. 8 is a schematic top view of a gas distribution member of the present invention;
FIG. 9 is a top view of another gas distribution member of the present invention;
Fig. 10 is a schematic view of a heat transfer member according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal device that includes the element.
It is noted that the drawings are in a very simplified form and utilize non-precise ratios, and are intended to facilitate a convenient, clear, description of the embodiments of the invention.
As shown in fig. 1, a thin film processing apparatus of the present invention is schematically illustrated, and comprises a vacuum reaction chamber 100, wherein the vacuum reaction chamber 100 is configured to process one or more wafers, including depositing material on the upper surface of the wafer or within recessed features of the wafer. The vacuum reaction chamber 100 is surrounded by a top cover 101 at the top end and a bottom wall 102 at the bottom end, and a chamber side wall 103 between the top cover 101 and the bottom wall 102, the bottom wall 102 and the chamber side wall 103 forming a chamber portion of the vacuum reaction chamber 100. A susceptor 110 is disposed in the vacuum reaction chamber 100, the susceptor 110 includes a wafer carrying table 111, a base table and a downward extending extension pipe 112, and a top of the wafer carrying table 111 is a carrying surface for placing a wafer. The susceptor 110 can be switched between at least upper and lower positions to meet the requirements of the process and wafer switching.
As shown in fig. 1, the vacuum reaction chamber 100 is further provided with a gas delivery device 120 and an exhaust port 131, the gas delivery device 120 is located at the top of the vacuum reaction chamber 100 and is connected to the top cover 101, and the gas delivery device 120 is connected to a gas supply device (not shown). The exhaust port is formed by a gas guiding component 130 arranged between the top cover 101 and the cavity side wall 103, the exhaust ports 131 formed on the gas guiding component 130 are distributed along the circumferential direction, and a gas extracting device discharges the gas in the vacuum reaction cavity 100, namely the reaction waste products, to the outside of the cavity through the exhaust ports 131. In the process (the arrow direction in fig. 1 is the air flow direction), the process gas in the gas supply device is delivered to the inside of the vacuum reaction chamber 100 through the gas delivery device 120, and the surface treatment process is performed in the wafer processing area above the wafer, so as to ensure the normal operation of wafer production, and the subsequent process gas is discharged from the chamber through the gas outlet 131.
Optionally, the process gas comprises one or more of a reactive gas (e.g., tiCl 4, reactive gas NH 3, etc.) and a purge gas (e.g., N 2, etc.), each of which may be alternately delivered into the vacuum reaction chamber 100. In this embodiment, the thin film processing apparatus is an Atomic Layer Deposition (ALD) apparatus, and the gas delivery apparatus 120 is configured to alternately and circularly deliver a reaction gas and a purge gas to the inside of the vacuum reaction chamber 100. Illustratively, for a typical TiN grown atomic layer deposition process, tiCl 4/N2/NH3/N2 gas is sequentially introduced into the vacuum reaction chamber 100 to complete the following growth cycle: 1) TiCl 4 is conveyed onto the wafer and adsorbed onto the surface position of the wafer; 2) N 2 blows gaseous TiCl 4;3)NH3 from the gas pipeline, the spray head and the process gap above the wafer, flows into the vacuum reaction cavity 100 and reacts with TiCl 4(s) adsorbed on the surface of the wafer to form a single-layer TiN film; 4) N 2 eliminates NH 3 and other gaseous species and circulates the above process until the TiN film grows to the desired thickness. In the process, the circulating transportation of various gases needs to change the gases rapidly and allow the high-flow stable transportation, and the high-quality TiN film can be grown by the atomic layer deposition process. It will be appreciated that the thin film processing apparatus of the present invention is not limited to the atomic layer deposition process apparatus described above, but may be any other type of thin film processing apparatus that performs other processes, and the present invention is not limited thereto. Likewise, the type of process gas is not limited to the above.
Further, the apparatus also includes a heating device (not shown) for providing thermal energy for the reaction, which may be disposed on the wafer carrier 111 or hung from the chamber sidewall 103. During processing, the chamber is brought to a desired process temperature by the heating means so that the source gas and the reactive gas supplied to the wafer surface react to form a thin film deposited on the wafer surface. Alternatively, the deposited thin film material may be one or more of titanium nitride, gallium arsenide, gallium nitride, or aluminum gallium nitride.
From the foregoing, it is important that the process gases within the chamber be delivered to the surface of the wafer at a rapid and high flow rate and remain uniformly distributed during wafer processing. In order to realize the maximum uniform distribution of the process gas, a gas conveying device with multi-layer distribution from top to bottom can be adopted, but the gas conveying device needs longer distribution time, the response time of the gas in the alternative conveying is too long, the requirement on the rapid high-flow stable conveying of the process gas cannot be met, and the requirement on the cyclic sweeping of the process gas in the atomic layer deposition process cannot be met. Most of the common gas delivery devices are provided with a plurality of gas inlets only on the gas spraying disk, and the gas diffusion steric hindrance effect easily causes that the density of the process gas in the central area below the gas spraying disk is greater than that in the edge area (edge gas flow attenuation), so that the edge effect (low flow rate) in the edge area is more obvious.
Based on the above-described problems, the present invention provides a gas delivery device 120, as shown in fig. 1 to 8 in combination, the gas delivery device 120 includes: a cover plate 121, a gas distribution member 122, and a gas shower plate 123. The gas distribution member 122 is provided with a gas diffusion channel 1221 and an edge gas inlet channel 1227 located at the periphery of the gas diffusion channel 1221, the gas diffusion channel 1221 includes a recess 1222 with a bottom surface protruding from the bottom surface of the gas distribution member 122, the recess 1222 divides a region below the bottom surface of the gas distribution member 122 into an inner region and a peripheral region, the recess 1222 includes a first side wall 1223 surrounding the inner region and a second side wall 1224 surrounding the first side wall 1223, the first side wall 1223 is provided with a first gas inlet channel 1225 communicating with the inner region, the second side wall 1224 is provided with a second gas inlet channel 1226 communicating with the peripheral region, the edge gas inlet channel 1227 communicates with the peripheral region, and the gas in the gas diffusion channel 1221 enters the inner region and the peripheral region through the first gas inlet channel 1225 on the first side wall 1223 and the second gas inlet channel 1226 on the second side wall 1224, respectively, and the gas in the edge gas inlet channel 1227 enters the peripheral region 1227.
As shown in fig. 1 to 4, the cover plate 121 is provided with a gas supply channel 1211, the gas distribution member 122 is located below the cover plate 121, and the gas supply channel 1211 of the cover plate 121 is communicated with the gas diffusion channel 1221; the gas spraying plate 123 is located below the gas distribution member 122, and a plurality of gas through holes 1231 are formed in the gas spraying plate 123. The upper surface of the gas spraying plate 123 and the inner area below the gas distribution member 122 form a central gas diffusion area 124, the upper surface of the gas spraying plate 123 and the outer area below the gas distribution member 122 form an edge gas diffusion area 125, the gas in the gas diffusion channel 1221 respectively enters the central gas diffusion area 124 and the edge gas diffusion area 125 through the first gas inlet channel 1225 on the first side wall 1223 and the second gas inlet channel 1226 on the second side wall 1224, the gas in the edge gas inlet channel 1227 enters the edge gas diffusion area 125, and the gas in the central gas diffusion area 124 and the edge gas diffusion area 125 respectively flows out through the gas through holes 1231 on the gas spraying plate 123 below.
During the process, the process gas of the gas supply device flows into the gas diffusion passage 1221 and the edge gas inlet passage 1227 of the gas distribution member 122 through the gas supply passage 1211 of the cover plate 121, then flows into the central gas diffusion region 124 through the first gas inlet passage 1225, and simultaneously flows into the edge gas diffusion region 125 through the second gas inlet passage 1226 and the edge gas inlet passage 1227, so that the process gas is transferred into the vacuum reaction chamber 100 through the gas through holes 1231 of the gas shower plate 123. The gas distribution member 122 uses the principles of flow convection and diffusion to rapidly deliver the process gas into the receiving space between the gas distribution member 122 and the gas shower plate 123. In the central gas diffusion region 124 of the receiving space, the process gas supplied through the first gas inlet passages 1225 in various directions forms a flow convection, rapidly diffuses from the outside to the inside and is uniformly distributed in a time-concentrated manner. In the edge gas diffusion area 125 of the accommodating space, the process gas is input from the second gas inlet passage 1226 and the edge gas inlet passage 1227, and the process gas conveyed by the two modes forms gas convection in the edge gas diffusion area 125, so that the process gas is rapidly and uniformly distributed in the area, the edge gas flow attenuation effect of gas diffusion (fast and large gas diffusion in the center and slow and small gas diffusion in the edge) is effectively compensated, the response time of the uniform distribution of the process gas in the area is reduced, the supply amount of the process gas in the area is ensured, and the coverage area and the flow uniformity of the process gas are increased. Even if the process gas delivered from the gas delivery channel 1211 is in a higher flow rate state, the process gas can be smoothly and rapidly delivered, so that the process gas can be rapidly and uniformly distributed in the accommodating space in a short time, especially, the edge gas inlet channel 1227 can further compensate for the phenomenon of edge flow attenuation (small flow rate/slow rate), so that the process gas is in a uniform distribution state before entering the cavity through the gas through holes 1231 of the gas spraying plate 123, the uniformity of the flow of the process gas delivered into the vacuum reaction cavity 100 through the gas spraying plate 123 is further ensured, the deposition quality of the wafer film is further ensured, and the yield of wafer production is improved. In addition, the process gas is conveyed into the vacuum reaction chamber 100 through the gas distribution member 122 and the gas spraying plate 123, so that a high flow speed can be maintained in the conveying process, the uniformity of the distribution of the process gas is ensured, the throughput of the process gas in a short time is increased, and the wafer production yield is improved.
According to the gas distribution member 122 provided by the invention, the process gas conveyed by the gas feeding channel 1211 is distributed between the central gas diffusion region 124 and the edge gas diffusion region 125 by utilizing the gas diffusion channel 1221 and the edge gas inlet channel 1227, so that uniformity of flow resistance in the radial direction is ensured, on one hand, the problem of uneven distribution of gas concentration in the central and edge regions in the prior art can be solved, on the other hand, the first gas inlet channel 1225 supplies gas to the central gas diffusion region 124 in a circumferential aggregation mode from outside to inside, the second gas inlet channel 1226 and the edge gas inlet channel 1227 supply gas to the edge gas diffusion region 125 in a convection mode, and further, the process gas is ensured to be rapidly filled in the edge and central regions, so that the distribution uniformity of the gas pressure in the central gas diffusion region 124 and the edge gas diffusion region 125 is kept in a rapid gas replacement process, the aim of rapid and uniform gas supply is achieved, the conversion response time between all process conditions is shortened, and the current gas is not influenced by the previous gas.
In this embodiment, the top cover 101 and the cover plate 121 are integrally formed, so that the processing difficulty and the assembly difficulty are reduced, and the overall assembly efficiency is improved conveniently. Of course, according to practical requirements, the top cover 101 and the cover plate 121 may be separately processed and assembled, and the assembly mode of the present invention is not limited. Further, in the present embodiment, the bottom of the gas supply channel 1211 is a frustum opening structure, and the perimeter of the inner side wall of the frustum opening structure increases from top to bottom, that is, the perimeter of the inner side wall at the top is smaller than the perimeter of the inner side wall at the bottom, and the closer the gas supply channel 1211 is to the gas diffusion channel 1221, the larger the diffusion surface of the process gas is, the more convenient the process gas is delivered to the gas diffusion channel 1221, and when the flow rate of the process gas is larger, the process gas can be ensured to be rapidly diffused into the gas diffusion channel 1221, thereby ensuring the throughput of the process gas. Of course, the shape and structure of the air supply passage 1211 is not limited to the above, but may be provided in other structure types, and the present invention is not limited thereto.
Further, in this embodiment, a space is provided between the gas distribution member 122 and the gas shower plate 123, that is, the process gases in the central gas diffusion region 124 and the edge gas diffusion region 125 can flow through each other, so as to avoid environmental pollution in the chamber and pollution on the wafer surface caused by particle formation. It will be appreciated that in another embodiment, there is no space between the gas distribution member 122 and the gas spraying plate 123, the process gases in the central gas diffusion region 124 and the edge gas diffusion region 125 cannot flow through each other, and the space therebetween is not limited, and may be set according to practical requirements.
As shown in fig. 5 to 7 in combination, in the present embodiment, the gas diffusion passage 1221 and the edge gas inlet passage 1227 divide the gas distribution member 122 into a central region inside the gas diffusion passage 1221, an edge region outside the edge gas inlet passage 1227, and an intermediate region between the central region and the edge region. Further, the gas diffusion passages 1221 are continuous annular gas passages, i.e., the recess 1222 of the gas distribution member 122 is a continuous annular recess structure. Preferably, the central axis of the gas supply passage 1211 coincides with the central axis of the central region, so that the process gas in the gas supply passage 1211 is rapidly and uniformly diffused along the circumferential annular gas diffusion passage 1221. It is understood that the structure of the gas diffusion passage 1221 is not limited to the above-described structure shape, and in other embodiments, it may be other structures, which the present invention is not limited to.
Further, in the present embodiment, the edge inlet passages 1227 are distributed along the circumferential direction of the gas distribution member 122, which is specifically a continuous annular passage, and the bottom of the annular passage is provided with a plurality of inlet holes 1228 for delivering the process gas to the edge gas diffusion area 125. Of course, the type of structure of the edge inlet passage 1227 is not limited to the above, and in other embodiments, it may be a plurality of discrete arc-shaped segment passages or other types of gas passages, which the present invention is not limited to. Illustratively, in another embodiment, the edge inlet passage 1227 is a plurality of through-hole structures through which process gas is directly delivered to the edge gas diffusion region 125.
As shown in fig. 2-4 in combination, in this embodiment, the top surface of the central region of the gas distribution member 122 has a lower height than the top surface of the central region thereof to facilitate rapid delivery of the process gas to the gas diffusion channels 1221 to maintain a desired flow rate of the process gas. Further, the height of the top surface of the edge region of the gas distribution member 122 is higher than the height of the top surface of the middle region. In practical applications, the heights of the different regions can be set to regulate the gas flow rate and the gas flow velocity entering the gas diffusion channel 1221 and the edge gas inlet channel 1227, so as to ensure the flow velocity and the flow distribution uniformity of the process gas in the central gas diffusion region 124 and the edge gas diffusion region 125. It will be appreciated that the relative height relationships of the various regions are not limited to the above, and in other embodiments, other height relationships are possible, as the invention is not limited in this regard. Illustratively, in another embodiment, the height of the top surface of the central region of the gas distribution member 122 is equal to the height of the top surface of the central region thereof, so as to facilitate the manufacturing of the gas distribution member 122, and also to enhance the process gas delivery rate to the edge gas inlet passage 1227, and to ensure the throughput of process gas from the edge gas diffusion region 125.
In this embodiment, the edge gas inlet passage 1227 is in communication with the gas diffusion passage 1221, and when the process gas delivered from the gas delivery passage 1211 reaches the gas diffusion passage 1221, a part of the process gas enters the recess 1222, then enters the central gas diffusion area 124 and the edge gas diffusion area 125 through the first gas inlet passage 1225 and the second gas inlet passage 1226, respectively, and another part of the process gas further diffuses from the gas diffusion passage 1221 to the edge gas inlet passage 1227, so that the process gas maintains a high flow rate and is uniformly distributed before being delivered into the chamber through the gas through holes 1231 of the gas shower plate 123, thereby further ensuring the flow rate and the distribution uniformity of the process gas delivered into the chamber. It should be noted that, the source of the process gas in the edge gas inlet passage 1227 is not limited to the process gas supplied from the gas supply passage 1211 to the gas diffusion passage 1221, and in other embodiments, the edge gas inlet passage 1227 may be directly connected to the gas supply passage 1211 (or a supply passage for connecting the two passages).
Alternatively, the channel width of the gas diffusion channel 1221 is 0.1 to 10 times the channel width of the edge inlet channel 1227. Preferably, the channel width of the gas diffusion channel 1221 is greater than that of the edge gas inlet channel 1227, and when the process gas conveyed by the gas feeding channel 1211 reaches the gas diffusion channel 1221, a part of the process gas enters the recess 1222, and further enters the central gas diffusion area 124 and the edge gas diffusion area 125 through the first gas inlet channel 1225 and the second gas inlet channel 1226, respectively, and another part of the process gas continues to be conveyed to the edge gas inlet channel 1227, and further enters the edge gas diffusion area 125 through the gas inlet hole 1228 at the bottom of the edge gas diffusion area 125, that is, two gas sources of the edge gas diffusion area 125 are provided, and when the channel width of the gas diffusion channel 1221 is greater than that of the edge gas inlet channel 1227, the process gas is helpful to ensure the density balance of the gas flows in the central gas diffusion area 124 and the edge gas diffusion area 125.
Further, the first side wall 1223 of the recess 1222 is spaced from the central axis of the gas distribution member 122 by 10% to 90% of the radius of the gas distribution member 122. Further alternatively, the edge inlet passage 1227 is spaced from the central axis of the gas distribution member 122 by 15% to 100% of the radius of the gas distribution member 122. The closer the recess 1222 or the edge inlet passage 1227 is to the central axis of the gas distribution member 122, the faster the process gas in the gas supply passage 1211 reaches the inside of the recess 1222 and the inside of the edge inlet passage 1227, in practical application, by reasonably designing the arrangement positions of the recess 1222 and the edge inlet passage 1227 and the passage widths of the two, the process gas in the central gas diffusion region 124 and the edge gas diffusion region 125 can be further ensured to be simultaneously filled and uniformly distributed, thereby not only realizing the rapid and uniformly distributed flow of the process gas into the vacuum reaction chamber 100, but also ensuring the larger throughput of the process gas, and being beneficial to improving the wafer processing quality and efficiency. When the process needs to supply different types of process gases alternately, the gas delivery device 120 can also avoid the interference of the previous gas to the current gas, thereby further ensuring the purity and uniformity of the process gas in the vacuum reaction chamber 100.
It is to be understood that the arrangement positions of the recess 1222 and the edge inlet passage 1227 are not limited to the above-mentioned numerical ranges, and the relation between the passage width of the gas diffusion passage 1221 and the passage width of the edge inlet passage 1227 is not limited to the above-mentioned ranges, and in practical application, the arrangement can be performed according to the actual requirements, so as to achieve the optimal process gas conveying effect, and further ensure the processing effect of the wafer.
In some processing processes, it is desirable to maintain the process temperature in the chamber at one or more temperature conditions (e.g., about 200 ℃) while maintaining uniformity of the temperature distribution of the process gas delivered into the chamber, and in this embodiment, a heating assembly (not shown) is provided on the cover plate 121 for heating the cover plate 121 and the gas delivery device 120 thereof, so as to reduce the temperature difference between the gas delivery device 120 and the process gas delivered thereby and the environment inside the chamber. It will be appreciated that the specific location of the heating element is not limited by the present invention, so long as the corresponding functional effects described above are achieved. Illustratively, in other embodiments, the heating assembly is disposed inside the top cover 101 and/or the cover plate 121. As shown in fig. 2 and 4 in combination, in order to ensure that the process gas rapidly diffuses from the gas supply channel 1211 into the gas diffusion channel 1221 and the edge gas inlet channel 1227, gaps exist between the top surfaces of the central and middle regions of the gas distribution member 122 and the cover plate 121, which reduce the heat transfer efficiency of the cover plate 121 to the gas distribution member 122, and easily cause uneven temperature distribution of each region of the gas distribution member 122 or excessively long temperature response time of certain regions, resulting in uneven temperature distribution of the process gas, and thus uneven temperature field distribution of the process gas supplied into the vacuum reaction chamber 100, for example, the temperature of the process gas in the middle of the chamber is slightly lower than that of the process gas in the edge region of the chamber, which may cause uneven wafer surface treatment and lower the yield of wafer production.
Based on the above structure, in order to further ensure the uniformity of the temperature field distribution of the gas delivery device 120 and the process gas delivered by the gas delivery device, a heat transfer component is disposed between the cover plate 121 and the gas distribution member 122, and the heat transfer component is used for heat exchange between the cover plate 121 and the gas distribution member 122, so as to help to promote the uniformity of the temperature of each region of the gas distribution member 121, and ensure the uniformity of the temperature of the process gas delivered into the chamber. That is, the gas delivery device 120 ensures both uniformity of flow distribution of the process gas and uniformity of temperature field of the process gas, balances heat transfer and flow distribution requirements of the process gas, and further ensures uniformity of wafer surface treatment. It should be noted that the heat transfer component may be disposed not only between the cover plate 121 and the gas distribution member 122, but also at other positions in the gas delivery device 120, which is not limited in this aspect of the invention, for example, the heat transfer component is disposed at a position between the lower surface of the gas distribution member 122 and the gas spraying plate 123 that does not affect the gas transmission, so as to improve the heat exchange efficiency between the gas distribution member 122 and the gas spraying plate 123, and further ensure the temperature uniformity of the process gas.
In this embodiment, the heat transfer component is disposed on the upper surface of the gas distribution member 122, so that the cover plate 121 transfers heat to the gas distribution member 122, which improves the temperature uniformity of each region of the gas distribution member 122, shortens the temperature response time of each region of the gas distribution member 122, and makes the temperature response time reach the required temperature state rapidly, thereby helping to ensure the temperature synchronism between the gas distribution member 122 and the cover plate 121, and providing preconditions for the temperature uniformity of the process gas. Of course, the heat transfer assembly is not limited to the above arrangement, but may be arranged in other ways, as long as the temperature response time of the gas distribution member 122 can be shortened to improve the temperature uniformity thereof, which is not limited by the present invention. Illustratively, in another embodiment, the heat transfer assembly is disposed at the bottom of the cover plate 121 between the cover plate 121 and the gas distribution member 122, and also allows for heat transfer from the cover plate 121 to the gas distribution member 122. In yet another embodiment, the heat transfer assembly is a separate component disposed between the cover plate 121 and the gas distribution member 122, and the heat transfer assembly is in contact with the cover plate 121 and/or the gas distribution member 122, which also accomplishes the above-described function.
Further, in the present embodiment, the heat transfer assembly is disposed on the top surfaces of the central region and the middle region of the gas distribution member 122, so that the cover plate 121 exchanges heat with the central region and the middle region of the gas distribution member 122, thereby improving the temperature uniformity of the gas distribution member 122. It will be appreciated that the location of the location area of the heat transfer assembly is not limited to the above, and in practical applications, the location area may be changed or set according to practical requirements, so long as the temperature uniformity of each component of the gas delivery device 120 can be quickly achieved, which is not limited in the present invention.
Optionally, the gas distribution member 122 comprises a layer or multiple layers of heat transfer components arranged sequentially from inside to outside. When the number of layers of the heat transfer assemblies is greater than or equal to 2, each layer of the heat transfer assemblies comprises a plurality of openings, and the azimuth angles and/or the opening sizes and/or the opening numbers corresponding to the opening positions of at least two layers of the heat transfer assemblies are different. The heat transfer assemblies of each layer are distributed in multiple layers in the longitudinal direction, so that uniformity of flow distribution of the conveyed process gas is guaranteed, and meanwhile, heat transfer efficiency of the cover plate 121 to the gas distribution member 122 is improved, and uniformity of a temperature field of the process gas is improved. Of course, the azimuth angle, the opening size and the number of the openings corresponding to the opening positions of the heat transfer components of each layer can be the same, and the invention is not limited to this. Optionally, when at least two layers of heat transfer components are disposed between the edge inlet channel 1227 and the gas diffusion channel 1221, the number of openings of the heat transfer components near the edge inlet channel 1227 is greater than or equal to the number of openings of the heat transfer components near the gas diffusion channel 1221, so as to improve the uniformity of flow distribution of the process gas and also compromise the uniformity of the temperature field of the process gas.
Further, as shown in fig. 5 to 7 in combination, in the present embodiment, the top surface of the central region of the gas distribution member 122 is provided with a first heat transfer assembly 126, and the first heat transfer assembly 126 includes a plurality of first heat transfer members 1261, each of the first heat transfer members 1261 is disposed circumferentially, and a first opening 1262 is formed between each of the first heat transfer members 1261. Further, the top surface of the middle region of the gas distribution member 122 is provided with the second heat transfer member 127 adjacent to the gas diffusion passage 1221 and the third heat transfer member 128 adjacent to the edge gas inlet passage 1227. The second heat transfer assembly 127 includes a plurality of second heat transfer members 1271, each second heat transfer member 1271 being circumferentially disposed with a second opening 1272 formed between each second heat transfer member 1271. The third heat transfer assembly 128 includes a plurality of third heat transfer members 1281, with a third opening 1282 formed between each third heat transfer member 1281. The process gas conveyed by the gas feeding channel 1211 conveys the process gas to the gas diffusion channel 1221 through the first openings 1262 between the first heat transfer elements 1261 (if the conical openings of the gas feeding channel 1211 are larger, part of the process gas is directly diffused to the gas diffusion channel 1211 without passing through the first heat transfer elements 1261), after reaching the gas diffusion channel 1221, part of the process gas enters the inside of the recess 1222 and then enters the central gas diffusion area 124 and the edge gas diffusion area 125 respectively through the first air inlet channel 1225 and the second air inlet channel 1226 thereof, and the other part of the process gas enters the space above the middle area through the second openings 1272 between the second heat transfer elements 1271 and then conveyed to the edge gas inlet channel 1227 through the third openings 1282 between the third heat transfer elements 1281, and then enters the edge gas diffusion area 125 through the air inlet holes 1228 at the bottom thereof, so that the process gas distribution in the central gas diffusion area 124 and the edge gas diffusion area 125 is more uniform; meanwhile, due to the existence of the first heat transfer component 126, the second heat transfer component 127 and the third heat transfer component 128, the temperature distribution of each region of the gas distribution component 122 is more uniform, and the temperature uniformity of the process gas in the central gas diffusion region 124 and the edge gas diffusion region 125 is further ensured.
It will be appreciated that the heat transfer assemblies are not limited to the above arrangement, and that each heat transfer assembly is not limited to being disposed immediately adjacent to the gas diffusion passage 1221 and/or the edge inlet passage 1227, and may be disposed as desired in actual use, as the invention is not limited in this regard. By way of example, as shown in fig. 9, in another embodiment, the third heat transfer assembly 128 is disposed at a central position between the gas diffusion passage 1221 and the edge gas inlet passage 1227, and as in this embodiment, the third heat transfer assembly 128 includes a third heat transfer member 1281 and a third opening 1282, and in this embodiment, the first heat transfer member 1261 and the second heat transfer member 1271 are disposed in the same manner as in this embodiment.
In the present embodiment, the first heat transfer element 1261, the second heat transfer element 1271 and the third heat transfer element 1281 are all fan ring structures (different from each other in fan ring width and inner arc length), and the respective fan ring structures of the first heat transfer assembly 126, the second heat transfer assembly 127 and the third heat transfer assembly 128 are uniformly distributed in the circumferential direction. Optionally, the width B of the fan ring structure is 2 times or more the inner arc length a (see fig. 10 for an example of the shape of the first heat transfer member 1261). It can be appreciated that the larger the width B of the fan ring structure, the smaller the inner arc length a, the smaller the section of the fan ring structure in the direction from inside to outside, the smaller the blocking effect on the process gas flow, which is beneficial to ensuring the rapid and uniform conveying of the process gas by the gas conveying device 120, and meanwhile, the larger width further ensures the heat exchange efficiency of the cover plate 121 and the gas distributing member 122. It is understood that the relationship between the width and the inner arc length of the fan ring structure is not limited to the above, and in other embodiments, it may be other proportional relationships, which is not limited by the present invention. Further, the structure types of the first heat transfer element 1261/the second heat transfer element 1271/the third heat transfer element 1281 are not limited to the above, and the heat transfer elements may be other structures capable of achieving the same function, which is not limited in the present invention, for example, in other embodiments, the heat transfer elements have rectangular structures or square structures. It is understood that the number of the heat transfer elements included in the heat transfer assembly is not limited to a plurality of heat transfer elements, and only one heat transfer element can be included, so that the heat transfer assembly can be set according to requirements in practical application. Illustratively, in another embodiment, the heat transfer assembly comprises only one heat transfer member that is in a circular ring configuration with a gap between the cover plate 121 or gas distribution member 122 on or around the ring configuration for process gas flow.
Optionally, the cover plate 121 is connected to the gas distribution member 122 by a mechanical fastening device, and the gas shower plate 123 is connected to the cover plate 121 by a mechanical fastening device. Illustratively, the mechanical fastening device is a bolt assembly 129. Of course, other connection methods between the cover plate 121 and the gas distribution member 122 or between the cover plate 121 and the gas shower plate 123 may be used, which is not limited in the present invention. Illustratively, in one embodiment, the outer edge of the gas distribution member 122 is threadably coupled to the cover plate 121, and in some process requirements, the spacing between the top surface of the gas distribution member 122 and the cover plate 121 can be adjusted to vary the throughput of the gas delivery device 120 to process gases; further, when there is a need for partitioning the process gas supplied into the vacuum reaction chamber 100 in the process, the distance between the bottom surface of the recess 1222 of the adjustable gas distribution member 122 and the upper surface of the gas shower plate 123 is 0. Of course, in practical application, a plurality of gas distribution members 122 with different specifications may be provided for the film processing apparatus to adapt to the gas supply requirements of different processes.
In summary, in the gas distribution member 122, the gas delivery device 120 and the thin film processing device thereof according to the present invention, the gas distribution member 122 is provided with the gas diffusion channel 1221 and the edge gas inlet channel 1227, the gas diffusion channel 1221 includes the recess 1222, the recess 1222 divides the area below the bottom surface of the gas distribution member 122 into the inner area and the outer area, the recess 1222 includes the first gas inlet channel 1225 and the second gas inlet channel 1226 outputting the process gas in different directions/areas, the process gas in the inner area is input through the first gas inlet channel 1225, the process gas in the outer area is input through the second gas inlet channel 1226 and the edge gas inlet channel 1227, so as to effectively compensate the edge gas flow attenuation effect in the outer area, effectively improve the distribution uniformity of the process gas based on the flow convection and diffusion principle, further make the distribution of the process gas delivered to the wafer surface more uniform, ensure the quality of the wafer surface treatment, and facilitate improving the yield of the wafer production; on the other hand, the process gas conveyed by the gas conveying device 120 can still maintain a higher flow speed in the conveying process, so that the throughput of the process gas in a short time can be increased while the uniformity of the distribution of the process gas is ensured, and the wafer production yield is improved.
Further, the gas conveying device 120 of the present invention is further provided with a heat transfer component between the gas distribution member 122 and the cover plate 121, wherein the heat transfer component is used for heat exchange between the cover plate 121 and the gas distribution member 122, so as to improve the uniformity of temperature distribution in each region of the gas distribution member 122, shorten the temperature response time (especially in the initial stage of temperature change), avoid influencing the uniformity of temperature distribution of the process gas due to the temperature difference in each region of the gas distribution member 122, and help to ensure the yield of wafer production. The gas delivery device 120 ensures both flow distribution uniformity and temperature field uniformity of the process gas, balances the heat transfer and flow distribution requirements of the process gas, and further ensures uniformity of wafer surface treatment.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (21)
1. A gas distribution member is characterized in that,
The gas distribution member is internally provided with a gas diffusion channel and an edge gas inlet channel positioned at the periphery of the gas diffusion channel, the gas diffusion channel comprises a concave part with the bottom surface protruding out of the bottom surface of the gas distribution member, the concave part divides the area below the bottom surface of the gas distribution member into an inner area and a peripheral area, the concave part comprises a first side wall encircling the inner area and a second side wall encircling the first side wall, the first side wall and the second side wall are respectively provided with the gas inlet channel so as to be respectively communicated with the inner area and the peripheral area, and the edge gas inlet channel is communicated with the peripheral area.
2. The gas distribution member according to claim 1, wherein,
The gas diffusion channel and the edge gas inlet channel divide the gas distribution member into a central region inside the gas diffusion channel, an edge region outside the edge gas inlet channel, and an intermediate region between the central region and the edge region.
3. The gas distribution member according to claim 2, wherein,
The upper surface of the gas distribution member further comprises a heat transfer assembly comprising one or more heat transfer elements.
4. The gas distribution member according to claim 3, wherein,
The heat transfer element is in a fan ring structure or a discontinuous ring structure or a rectangular structure or a square structure.
5. The gas distribution member according to claim 4, wherein,
The width of the fan ring structure is 2 times or more than the length of the inner arc.
6. The gas distribution member according to claim 3, wherein,
Each heat transfer member is disposed in the circumferential direction.
7. The gas distribution member according to claim 3, wherein,
The gas distribution member comprises a layer or a plurality of layers of heat transfer components which are sequentially arranged from inside to outside, and each layer of heat transfer component comprises a plurality of openings.
8. The gas distribution member according to claim 7,
When the number of layers of the heat transfer assemblies is greater than or equal to 2, the azimuth angles and/or the opening sizes and/or the opening numbers corresponding to the opening positions of at least two layers of the heat transfer assemblies are different.
9. The gas distribution member according to claim 7,
At least two layers of heat transfer components are arranged between the edge air inlet channel and the gas diffusion channel, and the number of the openings of the heat transfer components close to the edge air inlet channel is larger than or equal to that of the openings of the heat transfer components close to the gas diffusion channel.
10. The gas distribution member according to claim 3, wherein,
The heat transfer assembly is disposed above the central region and/or the intermediate region.
11. The gas distribution member according to claim 2, wherein,
The height of the top surface of the middle region is greater than or equal to the height of the top surface of the central region;
and/or the height of the top surface of the edge region is higher than the height of the top surface of the middle region.
12. The gas distribution member according to claim 1, wherein,
The edge air inlet channel is a continuous annular channel or a plurality of discontinuous arc-shaped section channels, and the annular channel or the arc-shaped section channels are communicated with the peripheral area through air inlet through holes;
or, the edge air inlet channel is a through hole structure, and the through hole structure is communicated with the peripheral area.
13. The gas distribution member according to claim 1, wherein,
The channel width of the gas diffusion channel is 0.1-10 times of the channel width of the edge gas inlet channel.
14. The gas distribution member according to claim 1, wherein,
The distance between the first side wall of the concave part and the central axis of the gas distribution member is 10% -90% of the radius of the gas distribution member.
15. The gas distribution member according to claim 1, wherein,
The distance between the edge air inlet channel and the central axis of the gas distribution member is 15% -100% of the radius of the gas distribution member.
16. A gas delivery device, comprising:
A cover plate provided with an air supply channel;
the gas distribution member according to any one of claims 1 to 15, being located below the cover plate, the gas supply passage of the cover plate being in communication with the gas diffusion passage;
The gas spraying disc is positioned below the gas distribution part and provided with a plurality of gas through holes;
The upper surface of the gas spraying disc and the inner area below the gas distribution part form a central gas diffusion area, the upper surface of the gas spraying disc and the outer area below the gas distribution part form an edge gas diffusion area, gas in the gas diffusion channel respectively enters the central gas diffusion area and the edge gas diffusion area through gas inlet channels on the first side wall and the second side wall, gas in the edge gas inlet channels enters the edge gas diffusion area, and the gas in the central gas diffusion area and the gas in the edge gas diffusion area respectively flow out through gas through holes on the gas spraying disc below.
17. The gas delivery device according to claim 16, wherein,
A heat transfer assembly is disposed between the cover plate and the gas distribution member, the heat transfer assembly being configured to transfer heat between the cover plate and the gas distribution member.
18. The gas delivery device according to claim 17, wherein,
The heat transfer component is arranged at the bottom of the cover plate;
And/or the heat transfer component is arranged on the upper surface of the gas distribution component;
and/or the heat transfer assembly is a separate component disposed between the cover plate and the gas distribution member;
the heat transfer assembly is in contact with the cover plate and the gas distribution member, respectively.
19. A thin film processing apparatus, comprising:
A vacuum reaction chamber comprising a top cover and a chamber body;
A gas delivery device as claimed in any one of claims 16 to 18, connected to the top cover for delivering process gas to the interior of the vacuum reaction chamber.
20. The thin film processing apparatus according to claim 19, wherein,
And a heating component is arranged in the top cover and/or the cover plate.
21. The thin film processing apparatus according to claim 19, wherein,
The gas conveying device is used for alternately and circularly conveying the reaction gas and the purge gas into the vacuum reaction cavity.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211336298.4A CN117987806A (en) | 2022-10-28 | 2022-10-28 | Gas distribution member, gas conveying device and film processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211336298.4A CN117987806A (en) | 2022-10-28 | 2022-10-28 | Gas distribution member, gas conveying device and film processing device |
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| CN117987806A true CN117987806A (en) | 2024-05-07 |
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| CN202211336298.4A Pending CN117987806A (en) | 2022-10-28 | 2022-10-28 | Gas distribution member, gas conveying device and film processing device |
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| CN (1) | CN117987806A (en) |
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- 2022-10-28 CN CN202211336298.4A patent/CN117987806A/en active Pending
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