KR200237071Y1 - Chemical vapor deposition system - Google Patents
Chemical vapor deposition system Download PDFInfo
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- KR200237071Y1 KR200237071Y1 KR2019960020169U KR19960020169U KR200237071Y1 KR 200237071 Y1 KR200237071 Y1 KR 200237071Y1 KR 2019960020169 U KR2019960020169 U KR 2019960020169U KR 19960020169 U KR19960020169 U KR 19960020169U KR 200237071 Y1 KR200237071 Y1 KR 200237071Y1
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- wafer
- vapor deposition
- chemical vapor
- seating portion
- reaction gas
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 24
- 239000012495 reaction gas Substances 0.000 claims abstract description 28
- 230000000903 blocking effect Effects 0.000 claims abstract description 20
- 238000009827 uniform distribution Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000005086 pumping Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 고안은 반도체 디바이스 제조공정에 사용되는 화학기상증착 장치에 관한 것으로써, 챔버 몸체와, 몸체 내에 형성되는 웨이퍼 안착부와, 안착부에 안착된 웨이퍼 상면에 반응가스를 분사하도록 챔버 몸체 형성되는 반응가스 공급구와, 몸체 내 공급구 앞에 형성되는 차단판과, 차단판과 웨이퍼 안착부 사이에 형성되고 다수개의 관통홀이 비교적 균일한 분포로 형성된 흐름조절판과, 안착부 둘레 근처에 형성되는 배출구를 포함하여 이루어진다.The present invention relates to a chemical vapor deposition apparatus used in a semiconductor device manufacturing process, wherein the chamber body is formed to inject a reaction gas into the chamber body, the wafer seating portion formed in the body, and the upper surface of the wafer seated on the seating reaction. A gas supply port, a blocking plate formed in front of the supply hole in the body, a flow control plate formed between the blocking plate and the wafer seating portion, and having a plurality of through holes formed in a relatively uniform distribution, and a discharge port formed near the seating portion circumference. It is done by
Description
제 1도는 종래의 화학기상증착 장치를 개략적으로 도시한 단면도.1 is a cross-sectional view schematically showing a conventional chemical vapor deposition apparatus.
제 2도는 종래의 장치에서 반응가스 분포를 나타내는 그래프.2 is a graph showing the reaction gas distribution in a conventional apparatus.
제 3도는 본 고안의 화학기상증착 장치를 개략적으로 도시한 단면도.3 is a cross-sectional view schematically showing a chemical vapor deposition apparatus of the present invention.
제 4도는 본 고안의 화학기상증착 장치의 차단판을 도시한 도면.Figure 4 is a view showing a blocking plate of the chemical vapor deposition apparatus of the present invention.
제 5도는 본 고안의 화학기상증착 장치에서 반응가스 분포를 나타내는 그래프.5 is a graph showing the reaction gas distribution in the chemical vapor deposition apparatus of the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
20, 웨이퍼 21, 챔버 몸체20, wafer 21, chamber body
22, 안착부 23, 공급구22, seating 23, feed port
24, 차단판 25, 흐름조절판24, blocking plate 25, flow control plate
26, 배출구 25-1, 27-1, 관통홀26, outlet 25-1, 27-1, through hole
본 고안은 반도체 제조장치의 화학기상증착 장치에 관한 것으로써, 특히 막 균일성의 향상에 적당하도록한 화학기상증착 장치에 관한 것이다.The present invention relates to a chemical vapor deposition apparatus of a semiconductor manufacturing apparatus, and more particularly to a chemical vapor deposition apparatus adapted to improve the film uniformity.
화학기상증착(CVD ; Chemical vapor Deposition)은 반도체 기판 위에 형성시키려고 하는 박막 재료를 구성하는 원소로 된 1종 또는 그 이상의 화합물, 단체의 가스를 기판 위에 공급하여 화학반응을 이용, 박막을 형성시키는 방법이다. 통상 2가지 이상의 가스를 공급하여 혼합, 화학반응을 일으키는 것으로써, 반도체 제조 공정에서 다양한 박막의 형성에 사용되고 있다.Chemical Vapor Deposition (CVD) is a method of forming a thin film by using a chemical reaction by supplying one or more compounds of an element constituting a thin film material to be formed on a semiconductor substrate or a gas of a single element on a substrate. to be. Usually, two or more gases are supplied to cause mixing and chemical reactions, which are used to form various thin films in a semiconductor manufacturing process.
제 1도는 종래의 화학기상증착 장치를 개략적으로 도시한 단면도이다.1 is a cross-sectional view schematically showing a conventional chemical vapor deposition apparatus.
종래의 화학기상증착 장치는, 제 1도에 도시한 바와 같이, 내부에 웨이퍼(10)가 안착되는 안착부(12)가 형성되어 있는 챔버 몸체(11)와, 안착부(12)에 안착된 웨이퍼(10) 상면으로 반응가스를 공급하도록 몸체에 형성되는 공급구(13)와, 몸체 내 공급구 앞에 형성된 차단판(Blocker plate)(14)과, 차단판(14)과 안착부(12) 사이에 형성되어 디퓨져 역할을 하는 샤워 헤드(Shower Head)(15)와, 안착부 둘레 부위에 형성되고 배기펌프(도시안함)가 연결되는 배출구(16)로 구성되어 있다.In the conventional chemical vapor deposition apparatus, as shown in FIG. 1, a chamber body 11 having a seating portion 12 on which a wafer 10 is seated is formed, and seated on a seating portion 12. Supply port 13 formed in the body to supply the reaction gas to the upper surface of the wafer 10, a blocker plate (14) formed in front of the supply port in the body, the blocker plate 14 and the seating portion 12 It is composed of a shower head (Shower Head) 15 formed between the shower head (Shower Head) 15 and the discharge port 16 is formed around the seating portion and connected to the exhaust pump (not shown).
차단판(14)의 역할은 2개 이상의 성분으로 공급되는 반응가스가 차단판 뒤에서 믹싱되도록 하는 것이며, 종래의 차단판에는 다수개의 관통홀(14-1)이 형성되어 있다.The role of the blocking plate 14 is to allow the reaction gas supplied from two or more components to be mixed behind the blocking plate, and a plurality of through holes 14-1 are formed in the conventional blocking plate.
샤워 헤드는 다수개의 관통홀(15-1)이 비교적 균일한 분포로 형성되어 있어서 반응가스가 웨이퍼(10)의 상면에 고르게 퍼지도록 하는 디퓨져(Diffuser) 역할을 한다.The shower head has a plurality of through holes 15-1 having a relatively uniform distribution, and serves as a diffuser to spread the reaction gas evenly on the upper surface of the wafer 10.
따라서 종래의 장치는, 공급구(13)로 반응가스를 공급하고, 배출구(16)로 펌핑하면서, 안착부(12)에 안착된 웨이퍼(10) 상면에 원하는 재질의 박막을 형성하게 된다.Therefore, the conventional apparatus forms a thin film of a desired material on the upper surface of the wafer 10 seated on the seating portion 12 while supplying the reaction gas to the supply port 13 and pumping the discharge port 16.
그러나 종래의 장치는, 제 2도에서 도시한 바와 같이, 웨이퍼에 형성되는 박막의 균일도가 좋지 못한 문제점이 있다.However, the conventional apparatus has a problem that the uniformity of the thin film formed on the wafer is not good, as shown in FIG.
제 2도는 종래의 장치에서 반응가스 분포를 나타내는 그래프로써, (a)는 샤워헤드 근처에서의 반응가스 분포를 나타내고, (b)는 웨이퍼 표면에서의 반응 가스 분포를 나타낸다.2 is a graph showing the reaction gas distribution in the conventional apparatus, (a) shows the reaction gas distribution near the showerhead, and (b) shows the reaction gas distribution on the wafer surface.
제 2도의 (a)에서 알 수 있는 바와 같이 종래의 장치의 차단판(14)에는 다수개의 관통홀(14-1)이 형성되어서 반응가스가 그 곳을 통과하여 샤워헤드(15) 근처에서는 중앙부위와 모서리부위가 비교적 균일한 분포를 갖고 있지만, 반응가스가 웨이퍼(10) 표면 근처에 도달해서는 모서리부위가 중앙부위 현저히 엷은 농도를 갖게 된다. 이는 배출구(16)가 웨이퍼 안착부(12) 둘레부위에 형성되어서, 제1도에서 알 수 있는 바와 같이, 웨이퍼 모서리부위로 향하는 반응가스들을 펌핑해내기 때문이다. 배출구는 웨이퍼 쪽에 형성되는것이 막 균일도에 가장 바람직하기 때문에 웨이퍼 둘레 부위에 형성되는 것이다.As can be seen in FIG. 2A, a plurality of through holes 14-1 are formed in the blocking plate 14 of the conventional apparatus, and the reaction gas passes through the center of the shower head 15. Although the portions and the edges have a relatively uniform distribution, the reaction gas reaches the wafer 10 near the surface so that the edges have a significantly thinner concentration at the center. This is because an outlet 16 is formed around the wafer seat 12 to pump the reactant gases towards the wafer edge, as can be seen in FIG. The outlet is formed around the wafer because it is most desirable for film uniformity to be formed on the wafer side.
본 고안은 상술한 종래 장치의 문제점을 개선하기 위한 것으로써, 차단판의 형태를 변경하여 실질적으로 웨이퍼 상에 형성되는 박막의 균일도를 향상시키는 화학기상 증착장치를 제공하고자 한다.The present invention aims to provide a chemical vapor deposition apparatus that improves the uniformity of a thin film formed on a wafer by changing the shape of a blocking plate to improve the problems of the conventional apparatus described above.
본 고안의 화학기상증착 장치는, 챔버 몸체와, 몸체 내에 형성되는 웨이퍼 안착부와, 안착부에 안착된 웨이퍼 상면에 반응가스를 분사하도록 챔버몸체 형성되는 반응가스 공급구와, 몸체 내 공급구 앞에 형성되는 차단판과, 차단판과 웨이퍼 안착부 사이에 형성되고 다수개의 관통홀이 비교적 균일한 분포로 형성된 흐름조절판과, 안착부 둘레 근처에 형성되는 배출구를 포함하여 이루어진다.The chemical vapor deposition apparatus of the present invention includes a chamber body, a wafer seating portion formed in the body, a reaction gas supply port formed in the chamber body so as to inject the reaction gas onto the upper surface of the wafer seated on the seating portion, and formed in front of the supply hole in the body. And a flow control plate formed between the blocking plate and the wafer seating portion and having a plurality of through holes formed in a relatively uniform distribution, and a discharge port formed near the seating portion circumference.
이하, 첨부한 도면을 참조하여 본 고안의 화학기상증착 장치를 상세히 설명하면 다음과 같다.Hereinafter, the chemical vapor deposition apparatus of the present invention with reference to the accompanying drawings in detail as follows.
제 3도는 본 고안의 화학기상증착 장치를 개략적으로 도시한 단면도이다.3 is a cross-sectional view schematically showing a chemical vapor deposition apparatus of the present invention.
제 4도는 본 고안의 화학기상증착 장치의 차단판을 도시한 도면이다.4 is a view showing a blocking plate of the chemical vapor deposition apparatus of the present invention.
제 3도에 도시한 바와 같이 본 고안의 화학기상증착 장치는, 챔버 몸체(21)와, 몸체 내에 형성되는 웨이퍼 안착부(22)와, 안착부에 안착된 웨이퍼(20) 상면에 반응가스를 분사하도록 몸체 형성되고 공급라인(도시안함)이 연결되는 반응가스 공급구(23)와, 안착부(22) 둘레 근처에 형성되고 배기펌프(도시안함)가 연결되는 배출구(26)를 구비하고 있다.As shown in FIG. 3, the chemical vapor deposition apparatus of the present invention includes a reaction gas on a chamber body 21, a wafer seating portion 22 formed in the body, and an upper surface of the wafer 20 seated on the seating portion. It has a reaction gas supply port 23 is formed to the body and connected to the supply line (not shown), and the discharge port 26 is formed around the seating portion 22 and connected to the exhaust pump (not shown) .
공급구(23) 앞에는 차단판(Blocker plate)이 설치되는데, 제 4도에서 알수 있는 것과 같이 차단판은 관통홀이 형성되어 있지 않은 평평한 판으로써, 공급구(23)로 유입된 반응가스가 이 차단판(24)에 부딪히며 차단판 뒤에서 충분히 혼합(Mixing)되어 지고 차단판을 돌아 웨이퍼(20) 쪽으로 흐르게 된다.A blocker plate is installed in front of the supply port 23. As shown in FIG. 4, the blocker plate is a flat plate having no through-hole formed therein, and the reaction gas introduced into the supply port 23 is provided with this. It hits the blocking plate 24 and is sufficiently mixed behind the blocking plate and flows back to the wafer 20 by turning the blocking plate.
차단판(24)과 안착부 사이에는 샤워헤드와 같이 디퓨져(Diffuser) 역할을 하 는 흐름 조절판(25)이 형성되는데, 관통홀(25-1)이 비교적 균일한 분포로 형성되어서 웨이퍼 표면에 고르게 반응가스가 도달하도록 한다.Between the blocking plate 24 and the seating portion, a flow control plate 25 acting as a diffuser, such as a shower head, is formed, and the through holes 25-1 are formed in a relatively uniform distribution so that the wafer surface is evenly distributed. Allow the reaction gas to reach.
도면부호(27)는 관통홀(27-1)이 형성된 판으로써, 흐름조절판(25)과 차단판(24) 사이에 형성되어 지나치게 모서리부위로 가스가 몰리는 것을 억제하는 완충역할을 하도록 한 것이다.Reference numeral 27 is a plate formed with the through-hole 27-1, and is formed between the flow control plate 25 and the blocking plate 24 to act as a buffer to suppress the gas from excessively cornering.
제 5도는 본 고안의 화학기상증착 장치에서 반응가스 분포를 나타내는 그래프로써, (a)는 샤워헤드 근처에서의 반응가스 분포를 나타내고, (b)는 웨이퍼 펴면에서의 반응가스 분포를 나타낸다.5 is a graph showing the reaction gas distribution in the chemical vapor deposition apparatus of the present invention, (a) shows the reaction gas distribution near the showerhead, and (b) shows the reaction gas distribution on the wafer spread surface.
본 고안의 화학기상증착 장치는, 2개 이상의 성분으로 구성된 반응가스가 공급구(23)를 통하여 공급되면 차단판(24)에 부딪혀 그 뒤에서 충분히 혼합되고, 차단판(24)을 돌아 도면부호(27) 판을 통과하여 흐름조절판(25)으로 내려간다. 이때 반응가스가 차단판(24)을 돌아서 흐름조절판(25)으로 나오기 때문에 제 5도의 (a)에서 나타낸 바와 같이, 흐름조절판(25)의 중앙부위보다 모서리부위가 농도가 높게 된다. 흐름조절판(25)을 통과한 반응가스 중 모서리 부위의 반응가스의 일부는 배출구(26) 펌핑에 의해 펌핑된다. 따라서 제 5도의 (b)에서 나타낸 바와 같이, 실질적으로 웨이퍼 표면에 도달하는 반응가스의 농도는 균일한 분포를 갖게 된다.In the chemical vapor deposition apparatus of the present invention, when a reaction gas composed of two or more components is supplied through the supply port 23, the chemical vapor deposition apparatus hits the blocking plate 24 and is sufficiently mixed thereafter. 27) Pass down the plate to the flow control plate (25). At this time, since the reaction gas is turned to the flow control plate 25 by turning the blocking plate 24, as shown in (a) of FIG. 5, the edge portion has a higher concentration than the center portion of the flow control plate 25. A part of the reaction gas at the corner portion of the reaction gas passing through the flow control plate 25 is pumped by the outlet 26 pumping. Therefore, as shown in FIG. 5B, the concentration of the reaction gas substantially reaching the wafer surface has a uniform distribution.
상술한 바와 같이, 본 고안의 화학기상증착 장치는 배출구의 펌핑 영향을 받아 웨이퍼에 증착되는 박막의 균일도가 좋지 않은 종래의 장치와는 달리, 실질적으로 웨이퍼 표면에 증착되는 박막 균일도가 향상된다.As described above, the chemical vapor deposition apparatus of the present invention is substantially improved in the uniformity of the thin film deposited on the wafer surface, unlike the conventional apparatus in which the uniformity of the thin film deposited on the wafer is not affected by the pumping effect of the outlet.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960020169U KR200237071Y1 (en) | 1996-07-08 | 1996-07-08 | Chemical vapor deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960020169U KR200237071Y1 (en) | 1996-07-08 | 1996-07-08 | Chemical vapor deposition system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980009675U KR980009675U (en) | 1998-04-30 |
| KR200237071Y1 true KR200237071Y1 (en) | 2001-11-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019960020169U KR200237071Y1 (en) | 1996-07-08 | 1996-07-08 | Chemical vapor deposition system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100634451B1 (en) | 2005-01-10 | 2006-10-16 | 삼성전자주식회사 | Apparatus for manufacturing semiconductor device |
-
1996
- 1996-07-08 KR KR2019960020169U patent/KR200237071Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100634451B1 (en) | 2005-01-10 | 2006-10-16 | 삼성전자주식회사 | Apparatus for manufacturing semiconductor device |
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| Publication number | Publication date |
|---|---|
| KR980009675U (en) | 1998-04-30 |
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