JPH01168023A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To form a semiconductor film in a state that no compound is generated by mixture at a room temperature by independently providing supply tube systems for introducing material gases to a plasma reaction chamber, and respectively connecting the gases to a plurality of holes formed at an electrode not mounted with a substrate in the chamber. CONSTITUTION:Two electrodes 4, 5 provided in a plasma reaction chamber 1 are connected to a high frequency power source 6. The electrode 5 mounted with no substrate has a plurality of holes 7, 8, 9 for supplying material gases. A plurality of material gas A supplying holes 7 are provided in the electrode 5, and a tube branched from a material gas A supply tube 16 connected to a material gas A cylinder 10 is connected thereto. A tube branched from a supply tube 17 connected to a gas cylinder 11 of material gas B and a tube branched from a supply tube 18 connected to a gas cylinder 12 of material gas C are respectively connected, similarly to the hole 8 for supplying the gas B and the hole 9 for supplying the gas C. Thus, three types of gases A, B, C can be mixed initially in a plasma state in the chamber 1.

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an apparatus for manufacturing a semiconductor film by plasma discharge decomposition of a mixed gas.

<Prior art> In an apparatus for forming a semiconductor film on a substrate by decomposing a mixed gas of multiple types of raw material gases by plasma discharge between parallel plate electrodes, conventionally, the multiple raw material gases are source gases outside the plasma reaction chamber. This is a structure in which the raw material gases are mixed in advance in a supply pipe system and then supplied into the plasma reaction chamber from a location other than the electrode in the plasma reaction chamber or from a star or a plurality of raw material gas supply ports provided on the electrode.

<Problems to be Solved by the Invention> However, in the conventional method of supplying the mixed raw material gas to the plasma reaction chamber after mixing the raw material gases in advance outside the plasma reaction chamber, it is difficult to mix highly reactive raw material gases. There is a possibility that the reaction will produce compounds, which will be supplied to the plasma reaction chamber as a mixed raw material gas, and as a result, it is expected that the compounds will affect film formation. For example, in order to form a compensation film in a multilayer semiconductor film, diborane and phosphine are sometimes mixed in monosilane gas, but diborane and phosphine may react.

The present invention has been devised in view of the above points, and aims to eliminate the above conventional problems and provide a completely new semiconductor manufacturing apparatus.

Means for Solving the Problems In order to achieve the above object, the present invention decomposes a mixed gas of multiple types of raw material gases by plasma discharge between parallel plate electrodes, In semiconductor manufacturing equipment that completely forms a semiconductor film, separate gas supply pipes are used depending on the type of raw material gas. It is connected to multiple holes provided in the electrode, which is for gas supply and does not have a substrate that cannot supply other types of raw material gas, and the raw material gas is supplied from these multiple holes, and the plasma between the parallel plate electrodes is For the first time, different types of raw material gases are mixed and plasma decomposed to form a semiconductor film.

That is, in the case of supplying multiple types of raw material gases to the plasma reaction chamber, the present invention makes the supply pipe system for guiding the raw material gases to the plasma reaction chamber independent for each raw material gas, and prevents the flow of other types of raw material gases. In addition, each type of raw material gas is connected to a plurality of holes provided in an electrode not provided with a substrate in the plasma reaction chamber.

Effect> When multiple raw material gases are supplied to the plasma reaction chamber with the above configuration, only the type of raw material gas determined by the gas supply pipe connected to each hole flows through the holes, and the raw material gases are supplied to the plasma reaction chamber. Mix for the first time. Therefore, when the highly reactive raw material gas is present all around, it will not react to form compounds and be supplied to the plasma reaction chamber as a mixed raw material gas, and the raw material gas will not be mixed for the first time in the plasma state. Therefore, unlike films formed by conventional methods, it is possible to form a semiconductor film having characteristics that meet the initial purpose.

<Example> Hereinafter, as an example of the present invention, a case where a semiconductor film is formed using eight types of source gases will be described in detail with reference to the drawings.

FIG. 1 is a diagram showing a plasma reaction chamber and a raw material gas supply system in an apparatus according to an embodiment of the present invention.
is a plasma reaction chamber, and the two electrodes 4 and 5 provided in this plasma reaction chamber 1 are connected to a high frequency power source 6 in the case of this embodiment, but a DC power source may be used. The electrode 5 on which the substrate is not installed has a plurality of holes 7° 8.9"f: for supplying raw material gas. The hole 7 for supplying raw material gas A has a
There are multiple cylinders in iR, each with 1 cylinder of raw material gas A.
The pipes branched from the raw material gas A supply pipe 16 connected to 0 are connected to each other. Similarly, the raw material gas B supply hole 8 and the raw material gas C supply hole 9 are also connected to a pipe branched from a supply pipe 17 connected to the raw material gas B cylinder 11 and a supply pipe 18 connected to the raw material gas C cylinder 12, respectively. It is connected to a branched pipe, and in this way, three sets of raw material gas A are distributed.
, B, and C' can be mixed for the first time in the plasma state in the plasma reaction chamber 1. In addition, if more than 8 types of raw material gases are used, and if they are divided into groups with low reactivity when mixed at room temperature, and the groups are within 8 types, for example, raw material gas D If the raw material gas D and the raw material gas A do not react during the reaction at room temperature, use this device by connecting the raw material gas D and the pressure reduction/flow rate adjustment system for the raw material gas D to the raw material gas A supply pipe 16. Can be done.

Figure 2 shows the holes for supplying 5 raw material gases. , 8.9, the hole 7 indicated by a cross is a hole for supplying the raw material gas A, and the hole 8 indicated by an O is a hole for supplying the raw material gas B. Hole 9, which is a supply hole and is indicated by a symbol, is a supply hole for raw material gas C, and corresponds to the case where the three types of raw material gases shown in FIG. 1 are used. As schematically shown in Figure 2, it is desirable for the II electrode to have pores distributed uniformly.Paying attention to the uniformity of the plasma, the size of the pores, the thickness of the branching tubes, It is necessary to design the length etc.

In the above-described embodiment, the cylinder 11° hashiphorane is supplied when forming a P-type amorphous silicon film, and the phosphine is supplied when forming an N-type amorphous silicon film, and diborane and phosphine are supplied as a compensation film. Supply at the same time for all formations.

<Effects of the Invention> As described above, according to the present invention, when forming a semiconductor film from a plurality of raw material gases that are highly reactive and create compounds by mixing at room temperature, the raw material gases are first in a plasma state. As a result, a semiconductor film can be formed without the generation of compounds caused by mixing at room temperature.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a plasma reaction chamber and a raw material gas supply system in an apparatus according to an embodiment of the present invention, and FIG. 2 shows a hole 'fr for supplying raw material gas, an electrode (+, a hole for supplying raw material gas A;
, a hole for supplying raw material gas B: and a hole for supplying raw material gas C). DESCRIPTION OF SYMBOLS 1... Plasma reaction chamber, 2... Exhaust port, 3... Substrate, 4... Electrode, 5... Electrode having a hole for supplying raw material gas, 6... High frequency power source, 7... ... Source gas A supply hole, 8... Source gas B supply hole, 9... Source gas C supply hole, 10... Source gas A cylinder, 11...
Raw material gas B cylinder, 12... Raw material gas C cylinder, 13
...Reducing pressure/flow ftmM node system for raw material gas A, 14...
Depressurization/flow rate adjustment system for raw material gas B, 15... Raw material gas C
pressure reduction/flow rate adjustment system, 16...raw material gas A supply pipe, 1
7... Raw material gas B supply pipe, 18... Raw material gas C supply pipe. Agent: Patent attorney Takeshi Sugiyama (1 other person) / Higashitsuto bus distorted G-to tile (roughness 1 size I etc. 2 drawings)

Claims (1)

[Claims] 1. In a semiconductor manufacturing apparatus that decomposes a mixed gas of multiple types of raw material gases by plasma discharge between parallel plate electrodes and forms a semiconductor film on a substrate placed on one electrode, the raw material gas It has independent gas supply pipes depending on the type of raw material gas, and each type of raw material gas supply pipe constitutes a gas supply system that does not flow other types of raw material gas, and each type of raw material gas supply pipe has It is connected to a plurality of holes provided in an electrode that is for supplying the raw material gas of the type and does not have a substrate that cannot supply other types of raw material gas, and the raw material gas is supplied from the plurality of holes, and the parallel plate A semiconductor manufacturing device characterized in that different types of raw material gases are first mixed and plasma decomposed in plasma between electrodes to form a semiconductor film.