JPH0322522A - Vapor growth device - Google Patents

Abstract

PURPOSE:To erect a structure in excellent film thickness distribution regardless of narrow wafer gaps for augmenting the throughput of the title device by a method wherein a double inner pipe pierced with multiple pores is provided inside an inner pipe while a reactive gas is blown in outside the double inner pipe so that the gas flow may be diffused inside the wafer gaps from the multiple pores pierced in the double inner pipe. CONSTITUTION:A quartz-made wafer carrier 2 holding multiple wafers W is vertically placed on a wafer carrier holding base 6 in a quartz-made reaction chamber 1. The wafer carrier 2 is covered with a quartz-made double inner pipe 8 with a top cover and cylindrical surface pierced with multiple pores or slits and then a gas (a) leading-in pipe 3 is led into the outside of an inner tube 8 inside an inner tube. Finally, a reaction gas is led into a deposition chamber from a gas leading-in pipe 3 and then exhausted from an exhaust pipe 4 so that the reaction chamber 1 may be kept at specific gas pressure by controlling the gas flow and the exhaust rate.

Description

[Detailed description of the invention] [Summary] Vapor phase growth (CVD) used for shrimp layer or various coatings
The purpose of the equipment is to provide a structure with good film thickness distribution even if the wafer spacing is narrow, and to improve the throughput of the equipment. A wafer carrier holding table (6) for vertically holding a wafer carrier (2) carrying a growth wafer, a gas introduction pipe (3) for introducing a reaction gas into the reaction chamber, and a wafer carrier holding table (3) for introducing the wafer carrier into the reaction chamber. an inner tube (5) that surrounds the reaction chamber; an exhaust pipe (4) that exhausts the reaction chamber from between the inner tube and the reaction chamber; and a plurality of holes that surround the wafer carrier and are opened inside the inner tube. an inner tube (8), the inner tube being closed at the top and bottom;
The gas introduction pipe is arranged outside of the gas inlet pipe.

(2) The inner tubes are open at the top and closed at the bottom, and the space between the inner tubes is such that the top and bottom are closed and the gas introduction tube is introduced.

[Industrial application field]

The present invention relates to a gas phase or length (
CVD) equipment.

The CVD apparatus of the present invention can be used to form thick layers, conductive layers, insulating layers, etc. on a substrate in a wafer process for manufacturing semiconductor devices.

In recent years, shrimp CVD equipment (CVO equipment in a broad sense including epitaxial growth equipment) is desired to have large throughput, large diameter wafer processing, and uniformity in film quality and film thickness distribution.

Therefore. There is a need for an apparatus that can increase the size of the apparatus itself, arrange wafers to be processed in a dense manner within the apparatus, and further improve the above-mentioned uniformity.

[Conventional technology]

In conventional shrimp CVD equipment, the wafer is rotated while placed on a quartz carrier in order to make the film thickness distribution uniform.
In addition, the reaction gas was supplied and exhausted as follows.

FIG. 5 is a schematic cross-sectional view of a conventional shrimp/CVD apparatus.

In the figure, a quartz wafer carrier 2 holding a large number of wafers in a quartz reaction chamber 1 is vertically placed on a wafer carrier holding table 6, and a reaction gas is introduced into the growth chamber from a gas introduction tube 3. , and is evacuated from the exhaust pipe 4, and by adjusting the gas flow rate and exhaust speed, the inside of the reaction chamber is maintained at a predetermined gas pressure.

The wafer carrier 2 has a structure that allows it to rotate while maintaining an airtight seal.

The wafer is heated by a heater 7 from outside the reaction chamber 1.

The wafer carrier 2 is surrounded by an inner tube 5 made of quartz in order to prevent the growth film from adhering to the tube wall of the reaction chamber 1 and to provide a channel shape that allows the gas flow to spread over all the wafers.

The gas introduction pipe 3 is introduced inside the inner pipe 5, and the exhaust pipe 4 is led out from between the inner pipe 5 and the reaction chamber l.

Therefore, the reaction gas flows as shown by the arrows.

However, in this apparatus, when the wafer spacing is narrowed, the film thickness distribution becomes thinner in the center, and it is necessary to maintain a certain spacing.

[Problem to be solved by the invention]

Therefore, it is not possible to increase the number of wafers per cycle over a certain length, reducing the throughput of the apparatus.

An object of the present invention is to provide a structure with good film thickness distribution even if the wafer spacing is narrow, and to improve the throughput of the apparatus.

[Means to solve the problem]

The solution to the above problem is the reaction chamber (1). A wafer carrier holding table (6) that vertically holds a wafer carrier (2) carrying a plurality of wafers to be grown in the reaction chamber, a gas introduction pipe (3) that introduces a reaction gas into the reaction chamber, and a an inner pipe (5) surrounding the wafer carrier in the chamber; an exhaust pipe (4) for evacuating the reaction chamber from between the inner pipe and the reaction chamber; and an exhaust pipe (4) surrounding the wafer carrier inside the inner pipe. A vapor phase growth apparatus having an inner tube (8) with a plurality of holes, the inner tube is closed at the top and the bottom, and the gas introduction tube is disposed outside the inner tube, or the inner tube has a plurality of holes. This is accomplished by a vapor phase growth apparatus in which the top is open and the bottom is closed, the top and bottom are closed between the inner tubes, and the gas introduction tube is introduced.

[Effect]

The present invention provides an inner tube with a large number of holes inside the inner tube, blows out the reaction gas to the outside of the inner tube, and diffuses the gas flow inside the wafer interval through the plurality of openings in the inner tube. , improve the circulation of gas between the wafers, or close the top and bottom of the inner tube and the inner tube to blow out the reaction gas between the inner tube and the inner tube to increase the pressure in this area. The gas is forced uniformly between the wafers through the holes.

(Example〕 Figure 3 is according to the first embodiment of the present invention. It is a schematic sectional view of a shrimp CVD apparatus.

In the figure, a quartz wafer carrier 2 holding a large number of wafers W in a quartz reaction chamber 1 is vertically placed on a wafer carrier holding table 6, and a reaction gas is introduced into the growth chamber from a gas introduction pipe 3. , and is evacuated from the exhaust pipe 4, and by adjusting the gas flow rate and exhaust speed, the inside of the reaction chamber is maintained at a predetermined gas pressure.

The wafer carrier 2 has a structure that allows it to rotate while maintaining an airtight seal.

The wafer is heated by a heater 7 from outside the reaction chamber 1.

The wafer carrier 2 is surrounded by an inner tube 5 made of quartz in order to prevent the growth film from adhering to the tube wall of the reaction chamber 1 and to form a flow path for distributing the gas flow to all the wafers.

The above is the same as the conventional example, but the differences are as follows.

An inner tube 8 with a closed top is placed over the wafer carrier 2,
A gas introduction pipe 3 is introduced to the outside of the inner pipe 8.

The inner tube 8 is made of quartz and has a number of holes or slits opened in its cylindrical surface.

FIG. 2 is according to a second embodiment of the invention. It is a schematic sectional view of a shrimp CVD apparatus.

In this example, the open-top inner tube 8 is connected to the wafer carrier 2.
is placed around the inner tube 8 and the top of the inner tube 5 is closed,
A gas introduction pipe 3 is introduced between the inner pipe 8 and the inner pipe 5.

Figures 3 (1) and (2) are structural diagrams of the inner tube.

FIG. 3(1) is a front view, and FIG. 3(2) is a sectional view.

There are 20 11 holes of 5 mmφ on the cylindrical surface of the inner tube 8.
It is opened at 1111 pitches.

FIGS. 4(1) and 4(2) are structural diagrams of other internal tubes.

Figure 4 (1) is a front view. FIG. 4(2) is a sectional view.

In the cylindrical surface of the inner tube 8, long holes (slits) 82 having a width of 5 l are opened in eight directions.

Next, an example of growth using this device will be explained.

Growth conditions Wafer: 6 inch φ Si wafer Number of wafers processed: 50 Film material: SiOz layer growth gas: SiH4+NzO Growth gas pressure 20.5↑orr Flow rate of certain long gas: SiH4100 SCCM, N2
0 1000 SCCM Substrate temperature 2800°C In addition to this growth example, in the case of SiN growth, S is added to the reaction gas.
iHCI3 and Nil. of. In the case of a polygon Si1f; c length, the reaction gas contains Sin. Use.

Numerical examples showing the effects of the embodiment will be shown below in comparison with the conventional example.

Film thickness distribution Example of wafer spacing ±5% 1/2 inch conventional example
±5% l inch From this result, it has become possible to process approximately twice as many wafers at one time.

〔Effect of the invention〕

As explained above, according to the present invention, vertical shrimp Cv
Even if the wafer spacing is narrow in the D device, a structure with good film thickness distribution can be obtained. We were able to improve the throughput of the device.

Furthermore, the inner tubes are sufficiently heated just like the wafer, and because the distance between the inner tubes and the wafer is narrow, the heat retention effect is better than when only the inner tubes are wide apart, and heat is prevented from being taken away by the gas. This improves the heat distribution on the wafer.

[Brief explanation of the drawing]

FIG. I is a schematic cross-sectional view of a shrimp CVD apparatus according to a first embodiment of the present invention. Figure 2 is a schematic sectional view of a shrimp/CVD apparatus according to the second embodiment of the present invention, Figures 3 (1) and (2) are structural diagrams of the inner tube, and Figure 4 (1)
), (2) are structural diagrams of another inner tube, and FIG. 5 is a schematic cross-sectional view of a conventional shrimp/CVO device. In the figure, l is a reaction chamber, 2 is a wafer carrier, 3 is a gas introduction pipe, 4 is an exhaust pipe, 5 is an inner pipe, 6 is a wafer carrier holding stand, 7 is a heater, 8 is an inner pipe

Claims (2)

[Claims] (1) A reaction chamber (1), a wafer carrier holding table (6) that vertically holds a wafer carrier (2) carrying a plurality of wafers to be grown in the reaction chamber, and a reaction gas introduced into the reaction chamber. A gas introduction pipe (3), an inner pipe (5) surrounding the wafer carrier in the reaction chamber, and an exhaust pipe (5) for evacuating the reaction chamber from between the inner pipe and the reaction chamber.
4), and an inner tube (8) surrounding the wafer carrier and having a plurality of holes, the inner tube is closed at the top and bottom, and the gas is introduced to the outside thereof. A vapor phase growth apparatus characterized in that a tube is provided. (2) A vapor phase growth apparatus characterized in that the inner tube has an open top and a closed bottom, and the space between the inner tubes has a closed top and bottom and the gas introduction tube is introduced thereinto.