JPH0322523A - Vapor growth device - Google Patents

Abstract

PURPOSE:To increase the processing times during the cleaning process of inner reaction chamber and inner jig while cutting down one deposition sequence time for augmenting the throughput of the title device by a method wherein a gas leading-in pipe and an exhaust pipe are encircled with respective bulkheads while the said leading-in pipe and the exhaust pipe are cooled down during the deposition process by the cooling down gas sprayed from cooling down gas nozzles provided inside the bulkheads. CONSTITUTION:Multiple susceptors 2 are vertically arranged to be held at intervals of respective struts 6 in a reaction chamber 1; an inner pipe 5 is formed so as to encircle a gas leading in pipe 3 and an exhaust pipe 4 with respective bulkheads; cooling down nozzles 8, 9 are provided in the respective bulkheads so as to oppose respectively to the gas-leading-in pipe 3 and the exhaust pipe to be sprayed with the cooling down gas; on the other hand, four each of cooling down gas nozzles 10-13 are provided between the reaction chamber 1 and the inner pipe 5 to spray the inner pipe 5 with the cooling down gas. In such a constitution, a reactive gas is led into the reaction chamber 1 from the gas leading-in pipe 3 to be exhausted from the exhaust pipe 4 so that the reaction chamber 1 may be kept at specific gas pressure by controlling the gas flow rate and the exhaust rate.

Description

[Detailed description of the invention] [Summary] Vapor phase growth (CVD) used for shrimp layers or certain films of various coatings
Regarding the equipment, we increased the number of treatments between cleaning the inside of the reaction chamber and internal jigs, and
The aim is to shorten the growth sequence time and improve the throughput of the apparatus. A plurality of susceptors (2) arranged in the reaction chamber and on which wafers to be grown are placed; and a gas introduction pipe (3) for introducing and blowing out a reaction gas into the reaction chamber. an exhaust pipe (4) provided opposite to the gas introduction pipe across the susceptor and evacuating the reaction chamber; an inner pipe (5) surrounding the susceptor, the gas introduction pipe, and the exhaust pipe; The cooling gas nozzle is configured to include a cooling gas nozzle that spouts gas toward each of the gas introduction pipe, the exhaust pipe, and the inner pipe.

[Industrial application field]

The present invention is based on vapor phase growth (
(CVD) equipment.

The CVD apparatus of the present invention forms a shrimp layer on a substrate in a wafer process for manufacturing semiconductor devices. Can be used for conductive layers, insulating layers, etc.

In recent years, high throughput, large-diameter wafer processing, and uniformity of film quality and film thickness distribution are desired for shrimp-CvD equipment (CVD equipment in a broad sense, including epitaxial or longitudinal equipment).

Therefore, there is a need for an apparatus that is large in size, allows for dense arrangement of wafers to be processed within the apparatus, and has good uniformity.

Furthermore. It is necessary to shorten the time required for one long sequence, and to increase the number of times the cleaning of the inside of the precinct chamber and internal jigs is performed from one cleaning to the next cleaning.

[Prior art] In the conventional shrimp/CVD equipment. For example, the wafer is rotated to make the film thickness distribution uniform, and the reaction gas is supplied and exhausted. It went like this:

Figure 3 is a schematic cross-sectional view of a conventional shrimp/CVD device. FIG. 4 is a plan view thereof.

In the figure, a large number of susceptors 2 are vertically arranged and held in a reaction chamber 1, each separated by a support 6.Reaction gas is introduced into the growth chamber through a gas introduction pipe 3, exhausted through an exhaust pipe 4, and the gas is A predetermined gas pressure inside the reaction chamber is maintained by adjusting the flow rate and exhaust speed.

The susceptor 2 has a structure that allows it to rotate while maintaining an airtight seal.

The susceptor 2 is heated by induction from the outside of the reaction chamber 1 by an RF coil 7.

In order to prevent a certain length of film from adhering to the tube wall of the reaction chamber 1, the susceptor 2, gas inlet tube 3, and exhaust tube 4 are surrounded by an inner tube 5.

However. In this device, the gas inlet pipe 3 is
, a large amount of long film adhered to the exhaust pipe 4, causing dust generation.

Furthermore, when the temperature dropped after the kaichō period, the temperature of the susceptor 2 did not come down easily due to the heat retention effect.

[Problem to be solved by the invention]

Therefore. There have been problems in that the number of processing times between cleaning and replacement of the inside of the reaction chamber and internal jigs until the next replacement cannot be increased, or that the time required for one growth sequence becomes long.

The present invention aims to increase the number of times of processing between cleanings of the interior of the reaction chamber and internal jigs, shorten the time required for one sequence, and improve the throughput of the apparatus.

[Means to solve the problem]

How to solve the above problem. Reaction chamber (1) and. A plurality of susceptors (2) arranged in the reaction chamber and on which wafers to be lengthened are placed, a gas introduction pipe (3) for introducing and blowing out a reaction gas into the reaction chamber, and a gas introduction pipe (3) with the susceptor in between. an exhaust pipe (4) provided at opposing positions and exhausting the reaction chamber; an inner pipe (5) surrounding the susceptor, the gas introduction pipe, and the exhaust pipe;
This is accomplished by a vapor phase growth apparatus having a cooling gas nozzle that injects gas toward each of the gas inlet pipe, the exhaust pipe, and the inner pipe.

[Effect]

The present invention is. The gas inlet pipe and exhaust pipe are each surrounded by a partition wall, and the gas is ejected from a cooling gas nozzle installed inside the partition wall. Gas introduction pipe during Kaicho. By cooling the exhaust pipe, we prevent film from adhering to it. By lengthening these cleaning intervals, and using the gas ejected from the cooling gas nozzle installed between the inner tube and the reaction chamber, the temperature drop time can be shortened by cooling the inner tube from the outside when the temperature is lowered after the temperature drop. This is how it was done.

〔Example〕

FIG. 1 is a schematic sectional view of a shrimp CVD apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view thereof.

In the figure, a large number of susceptors 2 are vertically arranged and held in a reaction chamber 1 with support columns 6 in between. A reaction gas is introduced into the reaction chamber through the gas introduction pipe 3. The gas is exhausted from the exhaust pipe 4, and a predetermined gas pressure is maintained within the reaction chamber by adjusting the gas flow rate and exhaust speed.

The susceptor 2 has a structure that allows it to rotate while maintaining an airtight seal.

The susceptor 2 is heated by induction from outside the reaction chamber 19 by the RF coil 7.

To prevent the growth film from adhering to the tube wall of reaction chamber 1. Susceptor 2, gas introduction pipe 3. The exhaust pipe 4 is surrounded by an inner pipe 5.

here. The reaction chamber 1 is made of quartz, and the susceptor 2 and inner tube 5 are made of carbon. The gas inlet pipe 3 and exhaust pipe 4 are made of quartz.

The above is the same as the conventional example. The differences from this are as follows.

The inner pipe 5 is shaped so that the gas introduction pipe 3 and the exhaust pipe 4 are each surrounded by a partition wall, and a cooling gas nozzle 8.9 is provided in each partition wall.
are provided so as to eject toward the gas introduction pipe and the exhaust pipe, respectively.

Additionally, four cooling gas nozzles 1 are installed between the reaction chamber 1 and the inner tube 5.
0 to 13 are provided so as to be ejected toward the inner tube 5.

next. An example of a precept using this device will be explained.

Certain length condition wafer: 8 inch φ Si wafer Number of wafers processed: 10 Film material: Si thin layer Or long gas: SiJ6+th Growth gas pressure: 10 Torr Growth gas flow rate: Si ztl6100 SCCM
82 10S42M Substrate temperature 2900″C
The gas inlet pipe 3 and the exhaust pipe 4 are cooled by flowing the gas at a flow rate of i/min.

Further, in order to prevent the reaction gas from going around to the growth chamber 1 and the inner tube 5 during the preheating period, H2 may be flowed into each of the cooling gas nozzles 10 to 13 at a flow rate of about Iff/min.

Next, when the temperature drops after Kaicho. 10l from gas introduction pipe 3
In addition to H2 per minute, H2 is flowed through each of the cooling gas nozzles 10 to 13 at a flow rate of 542 per minute to cool the inner tube 5 and accelerate the rate of temperature drop.

As a result of using the apparatus of the example, the number of processing times between cleaning the apparatus was 20 to 30 times in the past. This improved to 50 times.

Additionally, the temperature lowering time has been shortened from 15 minutes to 10 minutes.

(Effects of the Invention) As explained above, according to the present invention, the number of times of processing between cleanings of the inside of the reaction chamber and internal jigs in a shrimp/CVD apparatus is increased, the time for one growth sequence is shortened, and the throughput of the apparatus is increased. was able to improve.

FIG. 2 is a schematic sectional view of a conventional shrimp/CVD apparatus, and FIG. 4 is a plan view thereof.

In the figure, l is the reaction chamber. 2 is a susceptor, 3 is the gas introduction pipe 4 is the exhaust pipe, 5 is the inner tube, 6 is the pillar, 7 is an RF coil, 8 to 13 are cooling gas nozzles

[Brief explanation of the drawing]

Claims (1)

[Scope of Claims] A reaction chamber (1), a plurality of susceptors (2) arranged in the reaction chamber and on which wafers to be grown are placed, and a gas introduction pipe (2) for introducing and blowing out a reaction gas into the reaction chamber.
3), an exhaust pipe (4) provided opposite to the gas introduction pipe with the susceptor in between and exhausting the reaction chamber; and an inner pipe (4) surrounding the susceptor, the gas introduction pipe, and the exhaust pipe. 5) A vapor phase growth apparatus comprising: a cooling gas nozzle that spouts gas toward each of the gas introduction pipe, the exhaust pipe, and the inner pipe.