JP2014165500A - Batch substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To disclose a batch substrate processing apparatus.SOLUTION: The batch substrate processing apparatus according to the present invention includes a substrate processing section (100) for housing and processing a plurality of substrates (40) laminated on a substrate stacking section(500), and a gas supply section (200) for supplying substrate processing gas to the substrate processing section (100) while housing at least one gas supply passage (250) through which the substrate processing gas flows. The following relationship is satisfied d1≤d2, where d1 is the distance between the substrate (40) and the inner peripheral surface of the substrate processing section (100), and d2 is the distance between the substrate (40) and the gas supply passage (250).

Description

  The present invention relates to a batch type substrate processing apparatus. More specifically, a gas supply unit that accommodates the gas supply channel is formed so as to protrude on one outer peripheral surface of the substrate processing unit, and the size of the internal space in which the substrate processing step is performed can be reduced. The present invention relates to a batch type substrate processing apparatus.

  In order to manufacture a semiconductor element, a process of depositing a necessary thin film on a substrate such as a silicon wafer is essential. For the thin film deposition process, sputtering, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like is mainly used.

  The sputtering method is a technique in which argon ions generated in a plasma state collide with the surface of the target, and the target material separated from the surface of the target is deposited as a thin film on the substrate. The sputtering method has an advantage that a high-purity thin film excellent in adhesiveness can be formed. However, there is a limit in forming a fine pattern having a high aspect ratio.

  Chemical vapor deposition is a technology that deposits a thin film on a substrate by injecting various gases into a reaction chamber and chemically reacting a gas induced by high energy such as heat, light, or plasma with the reaction gas. It is. Since chemical vapor deposition uses a chemical reaction that occurs quickly, it is very difficult to control the thermodynamic stability of the atoms, and the physical, chemical and electrical properties of the thin film are reduced. There's a problem.

  The atomic layer deposition method is a technique in which a source gas and a purge gas that are reaction gases are alternately supplied to deposit a thin film in units of atomic layers on a substrate. The atomic layer deposition method is suitable for forming a fine pattern having a high aspect ratio because it uses a surface reaction to overcome the limitations of step coverage, and it is suitable for the electrical and physical characteristics of a thin film. There is an advantage of being excellent.

  The atomic layer deposition apparatus includes a single wafer type in which substrates are loaded into the chamber one by one and the deposition process proceeds, and a batch type in which a plurality of substrates are loaded into the chamber and the deposition process proceeds in batch. Can be distinguished.

  FIG. 1 is a perspective view showing a conventional batch atomic layer deposition apparatus.

  A conventional batch atomic layer deposition apparatus includes a process tube 10 that forms a chamber 11 in a space where a substrate 40 is loaded and a deposition process is performed. The process tube 10 is provided with components such as a gas supply unit 20 and a gas discharge unit 30 necessary for the vapor deposition process. In addition, a boat 50 including a pedestal 51 that is hermetically coupled to the process tube 10, a protrusion 53 that is inserted into the process tube 10, and a support bar 55 that allows the plurality of substrates 40 to be stacked is included. .

  In the conventional batch atomic layer deposition apparatus as described above, the distance d1 ′ between the substrate 40 and the inner peripheral surface of the process tube 10 is larger than the distance d2 ′ between the substrate 40 and the gas supply unit 20. (D1 ′> d2 ′). That is, in the conventional batch-type atomic layer deposition apparatus, components such as the gas supply unit 20 and the gas discharge unit 30 are provided in the interior [or the chamber 11] of the process tube 10, so There was a problem that the volume became unnecessarily large.

  For this reason, since a large amount of process gas must be supplied so as to fill the chamber 11 in order to perform the vapor deposition process, consumption of time necessary for supplying the process gas and waste of the process gas increase, and after the vapor deposition process. There is a problem that consumption of time for exhausting a large amount of process gas existing in the chamber 11 is increased.

  On the other hand, a conventional atomic layer deposition apparatus generally uses a vertical process tube 10 as an ideal configuration for easily withstanding the pressure inside the chamber 11. However, the upper space 12 of the vertical chamber 11 has a problem that a lot of time is consumed for supplying and discharging the process gas, and the process gas is wasted.

  Prior art related to a batch type apparatus for depositing an atomic layer is disclosed in Korean Patent Publication No. 10-2008-0028963, Korean Patent Publication No. 10-2011-0087580, and the like.

Korean Patent Publication No. 10-2008-0028963 Korean Patent Publication No. 10-2011-0087580

  The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a batch type substrate processing apparatus in which the size of the internal space in which the substrate processing step is performed is reduced. .

  Another object of the present invention is to provide a batch type substrate processing apparatus in which the size of the internal space in which the substrate processing step is performed is reduced and the amount of substrate processing gas used in the substrate processing step is reduced. .

  Further, the present invention reduces the size of the internal space in which the substrate processing process is performed, and makes the substrate processing process time epoch-making by smoothly supplying and discharging the substrate processing gas used in the substrate processing process. An object of the present invention is to provide a reduced batch type substrate processing apparatus.

  Another object of the present invention is to provide a batch type substrate processing apparatus in which the shape of the substrate processing unit is modified so that the upper surface is flattened from the vertical type, and the size of the internal space is reduced.

  In order to achieve the above object, a batch-type substrate processing apparatus according to an embodiment of the present invention includes a substrate processing unit that accommodates and processes a plurality of substrates stacked on a substrate stacking unit, and the substrate processing unit includes: A gas supply unit that is formed on one outer peripheral surface and accommodates at least one gas supply channel through which a substrate processing gas flows and supplies the substrate processing gas to the substrate processing unit, and the substrate and the substrate processing unit When the distance between the inner peripheral surface is d1 and the distance between the substrate and the gas supply flow path is d2, d1 ≦ d2.

  According to the present invention configured as described above, there is an effect that the size of the internal space in which the substrate processing step is performed is reduced.

  In addition, the present invention reduces the size of the internal space where the substrate processing process is performed and reduces the amount of substrate processing gas used in the substrate processing process, thereby reducing the cost of the substrate processing process. is there.

  Further, the present invention reduces the size of the internal space in which the substrate processing process is performed, and makes the substrate processing process time epoch-making by smoothly supplying and discharging the substrate processing gas used in the substrate processing process. Therefore, the productivity of the substrate processing process is improved.

  In addition, the present invention has the effect of reducing the size of the internal space by modifying the shape of the substrate processing unit so that the upper surface is flattened from the vertical type.

It is a perspective view which shows the conventional batch type atomic layer deposition apparatus. It is a perspective view which shows the batch type substrate processing apparatus concerning one Embodiment of this invention. FIG. 3 is a partially exploded perspective view of FIG. 2. It is a plane sectional view of the batch type substrate processing apparatus concerning one embodiment of the present invention. It is an expansion perspective view of the gas supply part and gas discharge part concerning one Embodiment of this invention. It is a perspective view which shows the batch type substrate processing apparatus which connected the reinforcement rib to the upper surface concerning one Embodiment of this invention. It is a perspective view which shows the batch type substrate processing apparatus with which the heater concerning one Embodiment of this invention was provided in the outer surface. It is an enlarged front view of the heater concerning one Embodiment of this invention.

  The following detailed description of the invention refers to the accompanying drawings that illustrate, by way of illustration, specific embodiments in which the invention can be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different from each other but need not be mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are associated with one embodiment and can be implemented in other embodiments without departing from the spirit and scope of the invention. It should also be understood that the location or arrangement of individual components in each disclosed embodiment can be changed without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims along with the full scope of equivalents to which they are claimed when properly described. Only limited. In the drawings, like reference numerals indicate like or similar functions across various aspects, and lengths, areas, thicknesses, etc., and forms thereof may be exaggerated for convenience.

  In this specification, a substrate can be understood to include a semiconductor substrate, a substrate used for a display device such as an LED or an LCD, a solar cell substrate, and the like.

  In the present specification, the substrate processing step means a vapor deposition step, preferably a vapor deposition step using an atomic layer vapor deposition method, but is not limited to this, and vapor deposition using a chemical vapor deposition method. It can be understood in the meaning including processes, heat treatment processes and the like. However, below, it demonstrates supposing the vapor deposition process using an atomic layer vapor deposition method.

  Hereinafter, a batch type apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

  2 is a perspective view showing a batch type substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is a partially exploded perspective view of FIG. 2, and FIG. 4 is a batch type according to an embodiment of the present invention. FIG. 5 is an enlarged perspective view of a gas supply unit 200 and a gas discharge unit 300 according to an embodiment of the present invention.

  2 to 4, the batch type substrate processing apparatus according to the present embodiment includes a substrate processing unit 100 and a gas supply unit 200.

  The function of the substrate processing unit 100 can be said to be a process tube. The substrate processing unit 100 accommodates a substrate stacking unit 500 in which a plurality of substrates 40 are stacked, and provides a chamber space 110 in which a substrate processing process such as a deposition film forming process can be performed.

  The material of the substrate processing unit 100 is at least one of quartz (Quartz), stainless steel (SUS), aluminum (Aluminium), graphite (Graphite), silicon carbide (Silicon carbide), and aluminum oxide (Aluminium oxide). Can be one.

  The gas supply unit 200 provides a space 210 in which at least one gas supply channel 250 is accommodated, and is formed so as to protrude on one outer peripheral surface of the substrate processing unit 100, and the internal space 110 of the substrate processing unit 100. A substrate processing gas can be supplied to the substrate. Here, the gas supply flow path 250 is a passage capable of receiving the substrate processing gas from the outside and supplying it to the inside of the substrate processing unit 100, and may have a form such as a tube or a hollow. In order to finely control the supply amount, it is preferable to be constituted by a pipe. In the following description, it is assumed that the three gas supply pipes 251 constitute the gas supply channel 250.

  On the other hand, the gas discharge unit 300 provides a space 310 in which at least one gas discharge channel 350 is accommodated, and protrudes on the other outer peripheral surface of the substrate processing unit 100 [that is, opposite to the gas supply unit 200]. The substrate processing gas that has been formed as described above and has flowed into the internal space 110 of the substrate processing unit 100 can be discharged. Here, the gas discharge channel 350 is a passage through which the substrate processing gas inside the substrate processing unit 100 can be discharged to the outside, and may have a form such as a tube or a hollow. For discharge, it is preferable that the gas supply pipe 251 is composed of a pipe having a larger diameter. On the other hand, it is also possible to form the gas discharge channel 350 in a hollow form without providing the gas discharge pipe 351, connect the pump to the gas discharge channel 350, and pump out the substrate processing gas. In the following description, it is assumed that one gas discharge pipe 351 constitutes the gas discharge channel 350.

  The outer peripheral surface of the substrate processing unit 100 can be integrally connected to the outer peripheral surface of the gas supply unit 200. Further, the outer peripheral surface of the substrate processing unit 100 can be integrally connected to the outer peripheral surface of the gas discharge unit 300. In view of this, the material of the gas supply unit 200 and the gas discharge unit 300 is preferably the same as that of the substrate processing unit 100. The substrate processing unit 100, the gas supply unit 200, and the gas discharge unit 300 are connected to each other with respect to the outer peripheral surfaces after the substrate processing unit 100, the gas supply unit 200, and the gas discharge unit 300 are separately manufactured. It is possible by the method of using and combining. In addition, after the substrate processing unit 100 having a predetermined thickness is manufactured in advance, the remaining portions excluding the portions protruding on one side and the other side on the outer peripheral surface of the substrate processing unit 100 are cut and processed. The gas supply unit 200 and the gas discharge unit 300 may be formed integrally with the unit 100.

  The batch type substrate processing apparatus according to the present embodiment may further include a housing 400 and a substrate stacking unit 500. The housing 400 is formed in a cylindrical shape with one side protruding so that the lower surface is open and can surround the substrate processing unit 100 and the gas supply unit 200. The upper surface side of the housing 400 is a clean room or the like. It may be supported and installed on the upper surface of a process chamber (not shown). Referring to FIG. 4, the housing 400 surrounds the outer periphery of the substrate processing unit 100 and the gas supply unit 200 in order to serve as a heat insulator that creates a thermal environment of the substrate processing unit 100 and the gas supply unit 200. The outer body 420 may be formed of a unit 410 having a bulk shape in which one side and the other side protrude, or a circular ring shape in which one side and the other side protrude in the vertical direction, and the outermost surface 420 of the housing 400 is finished with SUS, aluminum, or the like. be able to. In addition, the inner surface of the housing 400 may be provided with a heater 430 formed by continuously connecting bent portions (for example, “∪” or “∩” shape).

  The substrate stacking unit 500 is provided so as to be movable up and down by a known elevator system (not shown), and includes a main pedestal unit 510, an auxiliary pedestal unit 520, and a substrate support unit 530.

  The main pedestal 510 is formed in a substantially cylindrical shape, can be placed on the bottom of the process chamber, and the upper surface is hermetically coupled to a manifold 450 that is coupled to the lower end of the housing 400.

  The auxiliary pedestal 520 is formed in a substantially cylindrical shape, is provided on the upper surface of the main pedestal 510, is formed with a diameter smaller than the inner diameter of the substrate processing unit 100, and is inserted into the internal space 110 of the substrate processing unit 100. In order to ensure uniformity in the semiconductor manufacturing process, the auxiliary pedestal 520 is preferably provided to be rotatable in conjunction with a motor (not shown) so that the substrate 40 can be rotated during the substrate processing process. In addition, an auxiliary heater (not shown) for applying heat from the lower side of the substrate 40 during the substrate processing step may be provided inside the auxiliary pedestal portion 520 in order to ensure process reliability. The substrate 40 loaded and held on the substrate stacking unit 500 can be preheated before the substrate processing step by the auxiliary heater.

  A plurality of substrate support portions 530 are provided at intervals along the edge of the auxiliary pedestal portion 520. A plurality of support grooves are formed on the inner surface of the substrate support portion 530 facing the center side of the auxiliary pedestal portion 520 so as to correspond to each other. The edge of the substrate 40 is inserted and supported in the support groove, whereby the plurality of substrates 40 are stacked and held on the substrate stacking unit 500 in a stacked manner.

  The substrate stacking unit 500 can be detachably coupled to the lower end surface of the manifold 450 whose upper end surface is coupled to the lower end surface of the substrate processing unit 100 and the lower end surface of the gas supply unit 200 while moving up and down. The gas supply connection pipe 253 extending from the gas supply pipe 251 constituting the gas supply flow path 250 of the gas supply section 200 is inserted into and communicated with the gas supply communication hole 451 of the manifold 450, and the gas discharge flow of the gas discharge section 300. A gas discharge connection pipe 353 extending from the gas discharge pipe 351 constituting the path 350 is inserted into and communicates with the gas discharge communication hole 455 of the manifold 450. When the substrate stacking unit 500 is raised and the upper surface of the main pedestal 510 of the substrate stacking unit 500 is coupled to the lower end surface of the manifold 450, the substrate 40 is loaded into the internal space 110 of the substrate processing unit 100, The substrate processing unit 100 can be sealed. A sealing member (not shown) may be interposed between the manifold 450 and the main pedestal 510 of the substrate stacking unit 500 for stable sealing.

  Referring to FIGS. 3 and 4, the substrate processing unit 100 is disposed in the housing 400 concentrically with the housing 400, and the housing 400 is integrally connected to the substrate processing unit 100, the gas supply unit 200, and the substrate processing unit 100. It may be provided in a form surrounding the gas discharge unit 300.

  A gas supply channel 250 can be accommodated in the internal space 210 of the gas supply unit 200. Referring to FIG. 4 and FIG. 5A, the gas supply flow path 250 includes a plurality of gas supply pipes 251 formed along the length direction of the gas supply unit 200 and a gas toward the substrate processing unit 100. A plurality of discharge holes 252 formed on one side of the supply pipe 251. A plurality of discharge holes 252 are formed in each gas supply pipe 251. The gas supply connection pipe 253 communicated from the gas supply pipe 251 is inserted into and communicated with the gas supply communication hole 451 formed in the manifold 450.

  A gas discharge channel 350 can be accommodated in the internal space 310 of the gas discharge unit 300. Referring to FIGS. 4 and 5B, the gas discharge channel 350 includes a gas discharge pipe 351 formed along the length direction of the gas discharge unit 300 and a gas discharge pipe toward the substrate processing unit 100. 351 and a plurality of discharge holes 352 formed on one side. A plurality of discharge holes 352 are formed in the gas discharge pipe 351. The gas discharge connection pipe 353 communicated with the gas discharge pipe 351 is inserted into and communicated with the gas discharge communication hole 455 formed in the manifold 450.

  The discharge holes 252 and the discharge holes 352 uniformly supply the substrate processing gas to the substrate 40 when the substrate stacking unit 500 is coupled to the manifold 450 and the plurality of substrates 40 are accommodated in the substrate processing unit 100. It is preferable that the substrate 40 is positioned at a distance between the substrates 40 and 40 that are adjacent to each other so that the gas can be easily sucked and discharged to the outside.

  Since the gas supply unit 200 and the gas discharge unit 300 are formed so as to protrude from the outer peripheral surface of the substrate processing unit 100, the gas supply unit 200 and the gas discharge unit 300 are compared to the distance d 1 between the substrate 40 and the inner peripheral surface of the substrate processing unit 100. The distance d2 between the gas supply channel 250 and the gas supply channel 250 may be equal or larger. That is, the gas supply unit 20 or the gas discharge unit 30 is disposed in the chamber 11 of the process tube 10 in which the substrate processing process is performed as illustrated in FIG. 1, and the distance between the substrate 40 and the inner peripheral surface of the process tube 10. Unlike the conventional technique in which d1 ′ has a value larger than the distance d2 ′ between the substrate 40 and the gas supply unit 20 (d1 ′> d2 ′), the present invention satisfies the condition of d1 ≦ d2. Since the gas supply unit 200 or the gas discharge unit 300 is arranged outside the substrate processing unit 100, the size of the internal space 110 of the substrate processing unit 100 is set to the minimum size that can be accommodated by the substrate stacking unit 500 [or the substrate 40. Can be reduced to the minimum size that can be accommodated. Accordingly, not only is there a benefit in reducing the amount of substrate processing gas used due to a reduction in the size of the internal space 110 of the substrate processing unit 100 in which the substrate processing process is performed, and the associated cost savings in the substrate processing process, There is an advantage that the supply time and the discharge time of the processing gas are reduced and the productivity of the substrate processing process associated therewith is improved.

  FIG. 6 is a perspective view showing a batch-type substrate processing apparatus according to an embodiment of the present invention, in which reinforcing ribs 120 and 130 are coupled to the upper surface.

  Unlike the process tube 10 of the conventional batch type substrate processing apparatus, which is a vertical type, the substrate processing unit 100 of the present invention may have a cylindrical shape and a flat upper surface. By configuring the upper surface of the substrate processing unit 100 to be flat and eliminating the upper space 12 (see FIG. 1) of the vertical chamber 11 in which the substrate 40 cannot be accommodated, the size of the internal space 110 of the substrate processing unit 100 is further increased. There is an advantage of reducing. However, in order to eliminate the durability problem that may occur because the internal pressure cannot be evenly distributed as compared with the conventional vertical chamber 11, the batch-type substrate processing apparatus of the present invention has an upper surface of the substrate processing unit 100. A plurality of reinforcing ribs 120 and 130 are coupled to each other.

  The material of the reinforcing ribs 120 and 130 may be the same as the material of the substrate processing unit 100, but is not limited thereto, and various materials can be used within a range of purposes capable of supporting the upper surface of the substrate processing unit 100. Can be adopted.

  As shown in FIG. 6A, the reinforcing ribs 120 and 130 may be arranged so as to intersect with the plurality of reinforcing ribs 121 and 122 and coupled to the upper surface of the substrate processing unit 100, as shown in FIG. As described above, the plurality of reinforcing ribs 131 and 132 may be arranged in parallel to be coupled to the upper surface of the substrate processing unit 100. The reinforcing ribs 120 and 130 can be coupled to the upper surface of the substrate processing unit 100 using a welding method or the like.

  FIG. 7 is a perspective view showing a batch type substrate processing apparatus in which heaters 150 and 160 are provided on the outer surface according to an embodiment of the present invention.

  Referring to FIG. 7, as shown in FIG. 3, the heater 430 is provided on the inner surface of the housing 400, or the heater 430 is not provided on the outer surface of the housing 400. In addition, heaters 150 and 160 for heating the substrate 40 may be provided on the outer peripheral surface. Although not shown, heaters can be provided on the upper and outer peripheral surfaces of the gas supply unit 200 and the gas discharge unit 300 as necessary.

  The heaters 150 and 160 are formed in a plate shape, can efficiently transfer heat to the internal space 110 of the substrate processing unit 100, and can be any one selected from graphite (Graphite) and carbon (Carbon) composites. It is good to form with one. Alternatively, the heaters 150 and 160 may be formed of any one selected from silicon carbide or molybdenum, or may be formed of Kanthal.

が順次に連続して繰り返される形状に形成されるとよい。この時、ヒータ１５０は、基板処理部１００の上面に形成された補強リブ１２０、１３０によって区画された基板処理部１００の上面にそれぞれ設けられる。 The heater 150 is provided on the upper surface of the substrate processing unit 100,

It is good to form in the shape which repeats sequentially sequentially. At this time, the heater 150 is provided on the upper surface of the substrate processing unit 100 defined by the reinforcing ribs 120 and 130 formed on the upper surface of the substrate processing unit 100.

  The heater 160 includes a first heater 161 and a second heater 165 that are provided on the outer peripheral surface of the substrate processing unit 100, are respectively disposed on the lower side and the upper side, and are opposed to each other. A plurality of pairs of first heaters 161 and second heaters 165 are provided at predetermined intervals along the circumferential direction of the substrate processing unit 100.

  FIG. 8 is an enlarged front view of the heater 160 according to the embodiment of the present invention.

  The first heater 161 includes a pair of first left vertical plates 161a, a pair of first right vertical plates 161b, a pair of first central vertical plates 161c, a pair of first upper connection plates 161d, and a pair of first A lower connecting plate 161e and a first central connecting plate 161f are provided.

  The first left vertical plate 161a is a pair facing each other at a predetermined distance from the left side of the first heater 161 and faces the substrate processing unit 100 in the vertical direction. The first right vertical plate 161b is a pair facing each other with a predetermined distance from the right side of the first heater 161, and has the same length as the first left vertical plate 161a in the vertical direction of the substrate processing unit 100. The first central vertical plate 161c is a pair opposed to each other with a predetermined distance from the center of the first heater 161, and is directed from the first left vertical plate 161a and the first right vertical plate 161b toward the vertical direction of the substrate processing unit 100. It is formed short and is disposed between the first left vertical plate 161a and the first right vertical plate 161b.

  The first upper connecting plate 161d connects the upper portion of the pair of first left vertical plates 161a and the upper portion of the pair of first right vertical plates 161b, respectively. The first lower connecting plate 161e connects a pair of first central vertical plates 161c and lower portions of the first left vertical plate 161a and the first right vertical plate 161b adjacent to each other. The first center connecting plate 161f connects the upper portions of the pair of first center vertical plates 161c.

  The second heater 165 includes a pair of second left vertical plates 165a, a pair of second right vertical plates 165b, a pair of second central vertical plates 165c, a pair of second central connecting plates 165d, and a pair of second It has an upper connecting plate 165e and a second lower connecting plate 165f.

  The second left vertical plate 165a is a pair facing each other with a predetermined distance from the left side of the second heater 165, and faces the vertical direction of the substrate processing unit 100. The second right vertical plate 165b is a pair facing each other with a predetermined distance from the right side of the second heater 165, and has the same length as the second left vertical plate 165a in the vertical direction of the substrate processing unit 100. The second central vertical plate 165c is a pair opposed to each other at a predetermined distance from the center of the second heater 165, and is directed from the second left vertical plate 165a and the second right vertical plate 165b in the vertical direction of the substrate processing unit 100. It is formed long and is disposed between the second left vertical plate 165a and the second right vertical plate 165b.

  The second central connecting plate 165d connects a lower portion of the pair of second left vertical plates 165a and a lower portion of the pair of second right vertical plates 165b. The second upper connecting plate 165e connects the pair of second central vertical plates 165c and the upper portions of the second left vertical plate 165a and the second right vertical plate 165b adjacent to each other. The second lower connecting plate 165f connects the lower portions of the pair of second central vertical plates 165c.

  At this time, the upper surface of the first upper connecting plate 161d and the lower surface of the second central connecting plate 165d are opposed to each other, and the lower surface of the second lower connecting plate 165f is opposed to the upper surface of the first central connecting plate 161f. 2 The lower connection plate 165f is located between the first left vertical plate 161a and the first right vertical plate 161b.

  In the heater 160, the heater terminals have lower ends of the first left vertical plate 161a, lower ends of the first right vertical plate 161b, upper ends of the second left vertical plate 165a, and upper ends of the second right vertical plate 165b. Since it is provided in the part [that is, the heater terminal is provided on the four corners of the heater 160], there is an advantage that it is easy to connect the external power source and the heater terminal.

  Further, when the inside of the substrate processing unit 100 is heated, the upper part of the internal space 110 of the substrate processing unit 100 becomes hotter than the lower part due to the convection phenomenon. However, since the heater 160 is prepared as a first heater 161 and a second heater 165 that are separated from each other and arranged vertically, if the first heater 161 and the second heater 165 are appropriately controlled, the inside of the substrate processing unit 100 The temperature on the upper and lower sides of the space 110 can be controlled to be uniform.

  Further, three regions along the height direction of the substrate processing unit 100 [regions from the upper end of the second heater 165 to the second central connecting plate 165d, from the first upper connecting plate 161d to the second lower connecting plate 165f. Since the area, the area from the first central connecting plate 161f to the lower end of the first heater 161, can be heated by the two heaters 161 and 165 partitioned from each other, the two areas are controlled by two heaters. Compared to the above, it is advantageous in terms of efficiency and uniformity of temperature control.

  Thus, according to the present invention, the gas supply unit 200 and the gas discharge unit 300 that accommodate the gas supply channel 250 and the gas discharge channel 350 are arranged separately from the substrate processing unit 100 in which the substrate processing step is performed. Accordingly, the size of the internal space 110 of the substrate processing unit 100 can be minimized, so that the processing cost can be saved by reducing the amount of the substrate processing gas used, and the substrate processing gas supply and exhaust time can be shortened. The productivity of the processing process can be improved.

  Further, by forming the upper portion of the substrate processing unit 100 flat, the size of the internal space 110 of the substrate processing unit 100 can be further reduced, so that the above effect can be maximized, and the reinforcing ribs 120 and 130 are formed on the substrate. The durability can be enhanced by bonding to the upper surface of the processing unit 100.

  Since the heaters 150 and 160 are formed in a plate shape and are provided on the outer surface of the substrate processing unit 100, heat can be efficiently transferred to the internal space 110 of the substrate processing unit 100, and the terminals of the heater 160 are connected to the corners. By being provided on the side, the connection with the external power source can be facilitated, and the temperature of the three regions can be uniformly controlled by the two heaters 161 and 162.

  Although the present invention has been illustrated and described with reference to the preferred embodiments as described above, the present invention is not limited to the above-described embodiments, and general knowledge in the technical field to which the invention belongs is within the scope not departing from the spirit of the present invention. Various modifications and changes are possible depending on the person who has them. Such variations and modifications are within the scope of the present invention and the appended claims.

40 Substrate 100 Substrate Processing Unit 110 Internal Space 120, 130 Reinforcing Rib 150, 160 Heater 200 Gas Supply Unit 250 Gas Supply Channel 251 Gas Supply Pipe 252 Discharge Hole 300 Gas Exhaust Unit 350 Gas Exhaust Channel 351 Gas Exhaust Pipe 352 Discharge hole 400 Housing 450 Manifold 500 Substrate loading portion d1 Distance between substrate and inner peripheral surface of substrate processing portion d2 Distance between substrate and gas supply flow path

Claims (19)

A substrate processing unit for accommodating and processing a plurality of substrates stacked on the substrate stacking unit;
A gas supply unit that is formed on one outer peripheral surface of the substrate processing unit and that houses at least one gas supply channel through which a substrate processing gas flows and supplies the substrate processing gas to the substrate processing unit;
A batch type substrate processing apparatus, wherein a distance between a substrate and an inner peripheral surface of the substrate processing unit is d1, and a distance between the substrate and the gas supply channel is d2, d1 ≦ d2.   A gas exhaust unit that is formed on the outer peripheral surface of the other side of the substrate processing unit and that accommodates at least one gas exhaust channel through which a substrate processing gas flows, and exhausts the substrate processing gas supplied to the substrate processing unit; The batch type substrate processing apparatus according to claim 1. The outer peripheral surface of the substrate processing unit is integrally connected to the outer peripheral surface of the gas supply unit,
The batch type substrate processing apparatus according to claim 2, wherein the outer peripheral surface of the substrate processing unit is integrally connected to the outer peripheral surface of the gas discharge unit.   The gas supply flow path includes a plurality of gas supply pipes formed along a length direction of the gas supply part, and a plurality of discharge holes formed on one side of the gas supply pipe toward the substrate processing part. The batch type substrate processing apparatus according to claim 2, wherein:   The gas discharge flow path includes a gas discharge pipe formed along the length direction of the gas discharge section, and a plurality of discharge holes formed on one side of the gas discharge pipe toward the substrate processing section. The batch type substrate processing apparatus according to claim 4, further comprising:   The batch type substrate processing apparatus according to claim 1, wherein the substrate processing unit has a cylindrical shape and has a flat upper surface.   The batch type substrate processing apparatus according to claim 6, wherein a plurality of reinforcing ribs are coupled on the upper surface of the substrate processing unit.   The batch type substrate processing apparatus according to claim 7, wherein the plurality of reinforcing ribs are arranged so as to intersect with each other and are bonded onto an upper surface of the substrate processing unit.   The batch type substrate processing apparatus according to claim 7, wherein the plurality of reinforcing ribs are arranged in parallel and coupled on an upper surface of the substrate processing unit.   The batch type substrate processing apparatus according to claim 1, wherein heaters are provided on an outer peripheral surface and an upper surface of the substrate processing unit.   The batch type substrate processing apparatus according to claim 10, wherein the heater is formed in a plate shape. The heater provided on the upper surface of the substrate processing unit,

The batch type substrate processing apparatus according to claim 11, wherein the shape is a shape that is sequentially and continuously repeated. The heaters provided on the outer peripheral surface of the substrate processing unit have a first heater and a second heater which are disposed on the lower side and the upper side, respectively, and are opposed to each other.
The batch type substrate processing apparatus according to claim 11, wherein a plurality of the first heater and the second heater forming a pair are provided along a circumferential direction of the substrate processing unit. The first heater includes a pair of first left vertical plates facing each other from the left side of the first heater and facing upward and downward, and a pair of first left vertical plates facing each other from the right side of the first heater and facing upward and downward. A pair of first right vertical plates having the same length as the vertical plates, and are formed shorter than the first left vertical plate and the first right vertical plate, facing each other from the center of the first heater in the vertical direction. A pair of first central vertical plates disposed between the first left vertical plate and the first right vertical plate; an upper portion of the pair of first left vertical plates; and an upper portion of the pair of first right vertical plates A pair of first upper connection plates, and a first lower side connecting the first left vertical plate and the lower portion of the first right vertical plate, which are adjacent to the pair of first central vertical plates, respectively. A connecting plate and the first pair of first And a first center connection plate for connecting the upper portion of the vertical plate,
The second heater includes a pair of second left vertical plates facing each other from the left side of the second heater and facing upward and downward, and a pair of second left vertical plates facing each other from the right side of the second heater and facing upward and downward. A pair of second right vertical plates having the same length as the vertical plates, and are formed longer than the second left vertical plate and the second right vertical plate, facing each other from the center of the second heater and facing in the vertical direction. , A pair of second central vertical plates disposed between the second left vertical plate and the second right vertical plate, a lower portion of the pair of second left vertical plates and a pair of the second right vertical plates A pair of second center connecting plates that respectively connect the side portions; a second upper side that connects the second left vertical plate and the upper portion of the second right vertical plate adjacent to the pair of second center vertical plates; A connecting plate and the second pair of second And a second lower connecting plate for connecting the lower portion of the vertical plate,
The upper surface of the first upper connecting plate and the lower surface of the second central connecting plate face each other, and the lower surface of the second lower connecting plate faces the upper surface of the first central connecting plate, while the second lower connecting plate The batch type substrate processing apparatus of claim 13, wherein the side connecting plate is located between the first left vertical plate and the first right vertical plate. The lower surface of the substrate processing unit is opened,
A housing having a lower surface opened in a form surrounding the substrate processing unit and the gas supply unit is provided,
The batch type substrate processing apparatus according to claim 1, further comprising a substrate stacking unit that is capable of loading the plurality of substrates into the substrate processing unit and capable of moving up and down. The substrate stacking unit is detachably coupled to the lower end surface of the manifold, the upper end surface of which is coupled to the lower end surface of the substrate processing unit and the lower end surface of the gas supply unit, while moving up and down.
The batch type substrate processing apparatus of claim 15, wherein when the substrate stacking unit is coupled to a lower end surface of the manifold, the substrate is loaded on the substrate processing unit.   The discharge hole and the discharge hole are formed between the substrate and the substrate adjacent to each other supported by the substrate stacking unit when the substrate stacking unit in which the plurality of substrates are stacked is accommodated in the substrate processing unit. The batch type substrate processing apparatus according to claim 5, wherein the batch type substrate processing apparatus is located at an interval between each other.   The substrate processing unit includes at least one of quartz, stainless steel (SUS), aluminum (Aluminium), graphite (Graphite), silicon carbide (Silicon carbide), and aluminum oxide (Aluminium oxide). The batch type substrate processing apparatus according to claim 1, further comprising:   The heater is formed of at least one of graphite, carbon composite, silicon carbide, molybdenum, and Kanthal. The batch type substrate processing apparatus according to 1.

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