KR101826814B1 - Reactor of apparatus for processing substrate - Google Patents

Reactor of apparatus for processing substrate Download PDF

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Publication number
KR101826814B1
KR101826814B1 KR1020150134711A KR20150134711A KR101826814B1 KR 101826814 B1 KR101826814 B1 KR 101826814B1 KR 1020150134711 A KR1020150134711 A KR 1020150134711A KR 20150134711 A KR20150134711 A KR 20150134711A KR 101826814 B1 KR101826814 B1 KR 101826814B1
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South Korea
Prior art keywords
substrate processing
gas
gas discharge
substrate
reactor
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KR1020150134711A
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Korean (ko)
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KR20170035607A (en
Inventor
전재윤
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주식회사 테라세미콘
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Priority to KR1020150134711A priority Critical patent/KR101826814B1/en
Publication of KR20170035607A publication Critical patent/KR20170035607A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

A reactor of a substrate processing apparatus is disclosed. A reactor of a substrate processing apparatus according to the present invention is a reactor 100 of a substrate processing apparatus in which at least one substrate 40 is subjected to a substrate processing process in which the flat section of the reactor 100 is larger than the diameter of the substrate 40 Having an elliptical shape with a minor axis (s), the reactor (100) comprising: a substrate processing section (110) as a space in which the substrate (40) is processed; A gas supply unit 200 for supplying a substrate processing gas to the substrate processing unit 110; And a gas discharging portion 300 for discharging substrate processing gas supplied to the substrate processing portion 110. The gas discharging portion 300 includes a gas discharging portion 315 including a gas discharging port 315 through which substrate processing gas is discharged And an induction part (310).

Description

REACTOR OF APPARATUS FOR PROCESSING SUBSTRATE [0002]

The present invention relates to a reactor of a substrate processing apparatus. More particularly, the present invention relates to a method of manufacturing a substrate processing apparatus capable of increasing the uniformity of the substrate processing gas emission and the uniformity of the substrate processing process by providing a gas discharge induction portion in the gas discharge portion, .

In order to manufacture a semiconductor device, a process of depositing a necessary thin film on a substrate such as a silicon wafer is essential. Sputtering, chemical vapor deposition (CVD), and atomic layer deposition (ALD) are mainly used for the thin film deposition process.

The atomic layer deposition technique is a technique of alternately supplying a source gas and a purge gas, which are reactive gases, and depositing a thin film on an atomic layer basis on a substrate. Since atomic layer deposition utilizes surface reactions to overcome the limitations of step coverage, it is suitable for forming fine patterns having a high aspect ratio and has excellent electrical and physical properties of the thin film.

1 is a perspective view showing a conventional batch atomic layer deposition apparatus.

2 is a plan sectional view showing a flow of a substrate processing gas in a conventional batch type atomic layer deposition apparatus.

Referring to FIGS. 1 and 2, a conventional batch type atomic layer deposition apparatus includes a process tube 10 forming a chamber 11 in which a substrate 40 is loaded and a deposition process is performed. Inside the process tube 10, components such as a gas supply unit 20 and a gas discharge unit 30 necessary for a deposition process are installed. A support portion 51 for sealingly connecting with the process tube 10; a projection portion 53 for inserting into the process tube 10; and a support bar 55 for stacking a plurality of substrates 40 (Not shown).

In such a conventional batch type atomic layer deposition apparatus, as shown in FIG. 2, the shape of the flat cross section of the process tube 10 has a circular shape. The gas supply unit 20 and the gas discharge unit 30 are disposed opposite to each other. The substrate processing gas supplied into the chamber 11 from the gas supply unit 20 during the substrate processing process is discharged to the gas discharge unit 30 through the path 1 and discharged therefrom through the path 2, And may be discharged to the gas discharge portion 30. [ The substrate processing gas supplied at a small angle of incidence to the inner wall of the process tube 10 as in route 3 or supplied at a large angle of incidence to the inner wall of the process tube 10 as in route 4 flows straight through the gas discharge section 30 It can be discharged into the chamber 11 after being reflected and convected. This is because P ', P "and P'", which are the sum of the incident angle and the reflection angle of path 2, path 3, and path 4, are all different.

As the substrate processing gas reacts with the substrate 40 and further deposition is performed only in a specific portion of the substrate 40 when the substrate processing gas is reflected into the chamber 11 without being immediately discharged as in the path 3 or the path 4, ) Is lowered.

For uniform atomic layer deposition, it is preferable that the substrate processing gas is discharged to the gas discharging portion 30 after passing the upper portion of the substrate 40, such as the path 5. The substrate processing gas that has been supplied into the chamber 11 from the gas supply unit 20 and not injected into the substrate 40 is reflected by the inner wall of the process tube 10 and does not pass over the substrate 40, There is a problem that the gas is discharged to the gas discharging part 30 through the inner wall of the process tube 10 as indicated by the path 6. Accordingly, there has been a problem that the substrate processing gas is discharged without being used for the atomic layer deposition, resulting in waste, and the deposition uniformity of the substrate is also lowered.

In the conventional batch type atomic layer deposition apparatus, since the process tube 10 has a circular cross-sectional shape, the peripheral portion of the substrate 40 (or the projecting portion of the substrate mounting portion 50 53) and the space 31 between the inner wall of the process tube 10 can be disposed. Accordingly, in order to reduce the volume of the chamber 11 to reduce the amount of the process gas supplied into the chamber 11, the number of gas discharge pipes (not shown) included in the gas discharge unit 30 is reduced The gas discharge efficiency of the gas discharge portion 30 disposed in the narrow space 31 can be reduced because the size of the space occupied by the gas discharge portion 30 such as reducing the diameter of the gas discharge tube (not shown) There was this low problem.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art as described above, and it is an object of the present invention to provide an apparatus and a method for manufacturing a semiconductor device, And a reactor for the substrate processing apparatus.

It is another object of the present invention to provide a reactor of a substrate processing apparatus in which the efficiency of exhausting the substrate processing gas through the gas outlet of the gas discharge inducing portion is increased.

In order to achieve the above object, a reactor of a substrate processing apparatus according to an embodiment of the present invention is a reactor of a substrate processing apparatus in which at least one substrate is processed, The substrate having an elliptical shape having a minor axis larger than the diameter, the reactor being a space in which the substrate is processed; A gas supply unit for supplying a substrate processing gas to the substrate processing unit; And a gas discharge unit for discharging the substrate processing gas supplied to the substrate processing unit, wherein the gas discharge unit includes a gas discharge induction unit including a gas discharge port through which the substrate processing gas is discharged.

In order to achieve the above object, a reactor of a substrate processing apparatus according to an embodiment of the present invention is a reactor of a substrate processing apparatus in which at least one substrate is processed, Wherein the substrate has a shape in which at least two arcs having a radius of curvature larger than the diameter of the substrate are in contact with each other, the reactor being a space in which the substrate is processed; A gas supply unit for supplying a substrate processing gas to the substrate processing unit; And a gas discharge unit for discharging the substrate processing gas supplied to the substrate processing unit, wherein the gas discharge unit includes a gas discharge induction unit including a gas discharge port through which the substrate processing gas is discharged.

In order to achieve the above object, a reactor of a substrate processing apparatus according to an embodiment of the present invention is a reactor of a substrate processing apparatus in which at least one substrate is processed, The substrate having a shape including two curvature radii, the substrate being a space in which the substrate is processed; A gas supply unit for supplying a substrate processing gas to the substrate processing unit; And a gas discharge unit for discharging the substrate processing gas supplied to the substrate processing unit, wherein the gas discharge unit includes a gas discharge induction unit including a gas discharge port through which the substrate processing gas is discharged.

According to the present invention configured as described above, there is an effect of increasing the uniformity of the deposition of the substrate by guiding the substrate process gas to pass over the substrate by forming the gas discharge guide portion in the gas discharge portion.

Further, according to the present invention, there is an effect of increasing the efficiency with which the substrate processing gas is discharged through the gas discharge port of the gas discharge induction portion.

1 is a perspective view showing a conventional batch atomic layer deposition apparatus.
2 is a plan sectional view showing a flow of a substrate processing gas in a conventional batch type atomic layer deposition apparatus.
3 is a perspective view showing a substrate processing apparatus according to an embodiment of the present invention.
4 is a plan sectional view showing a flow of a substrate processing gas in a reactor according to an embodiment of the present invention.
5 is a perspective view illustrating a gas discharge guide according to an embodiment of the present invention.
Figures 6 to 9 are top and cross-sectional views of a reactor according to various embodiments of the present invention.
10 is a perspective view showing a reactor of a substrate processing apparatus in which a reinforcing rib is coupled to an upper surface of a reactor according to an embodiment of the present invention.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

In this specification, the substrate may be understood as including a substrate used for a semiconductor substrate, an LED, a display device such as an LCD, a solar cell substrate, and the like.

In the present specification, the substrate processing step means a deposition step, preferably a deposition step using an atomic layer deposition method, but the present invention is not limited thereto, and includes a deposition process using a chemical vapor deposition process, a heat treatment process, and the like . However, the following description assumes a deposition process using an atomic layer deposition method.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a batch type apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a perspective view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 3, the substrate processing apparatus according to the present embodiment may include a reactor 400 housing and a substrate stacking unit 500.

The reactor 100 functions as a process tube. The reactor 100 includes a substrate loading unit 500 in which a plurality of substrates 40 are stacked, and a chamber space 500 in which a substrate processing process such as a deposition film forming process can be performed. The substrate processing unit 110 is provided with a substrate processing unit.

The material of the reactor 100 may be at least one of quartz, stainless steel (SUS), aluminum, graphite, silicon carbide, or aluminum oxide.

The reactor 100 includes a substrate processing unit 110 which is a chamber space in which the substrate 40 is subjected to substrate processing, a gas supply unit 200 which supplies the substrate processing gas to the substrate processing unit 110, And a gas discharge unit 300 for discharging gas.

The gas supply unit 200 may include at least one gas supply pipe 210 formed along the longitudinal direction (i.e., the vertical direction) of the gas supply unit 200. Here, the gas supply pipe 210 does not need to have the shape of the pipe shown in FIG. 3, and it can function as a passage through which the substrate processing gas is supplied from the outside and can be supplied into the substrate processing unit 110 And may have other shapes such as a hollow. However, it is preferable that it is constituted by a tube for precise control of the supply amount of the substrate processing gas. In FIG. 3, one gas supply pipe 210 constitutes the gas supply unit 200, but the number of the gas supply pipes 210 can be changed appropriately.

A plurality of discharge holes 220 may be formed on one side of the gas supply pipe 210 toward the substrate 40 located in the substrate processing unit 110. The discharge holes 220 are formed in the substrate processing unit 110 such that when the plurality of substrates 40 are accommodated in the substrate processing unit 110, the substrate processing unit 500 is coupled to the manifold 450, And is preferably positioned at an interval between the adjacent substrate 40 and the substrate 40 supported on the substrate supporter 530 so that the substrate processing gas can be easily sucked and discharged to the outside Do.

The gas discharge portion 300 may be positioned to face the gas supply portion 200. The gas discharge unit 300 may be configured in the form of a tube including a hollow for smooth discharge of the substrate processing gas. The substrate processing gas may be discharged from the substrate processing unit 110 to the outside through a discharge hole 350 located below the gas discharge unit 300. The discharge hole 350 may be connected to a known pumping means (not shown) to create a pressure at which the substrate processing gas can be pumped.

The housing 400 may have the same shape as that of the reactor 100 so that the lower surface of the housing 400 may be opened and the reactor 100 may be wrapped around the upper surface of the housing 400. The upper surface of the housing 400 may be supported on the upper surface of a process chamber Can be installed. The outermost surface of the housing 400 can be finished with SUS, aluminum or the like, and a heater (not shown) formed by continuously connecting bent portions (for example, "∪" or "∩" .

The substrate loading unit 500 can be elevated by a known elevator system (not shown) and can include a main receiving unit 510, an auxiliary receiving unit 520, and a substrate supporting unit 530.

The main receiving portion 510 may be formed in a substantially cylindrical shape and may be seated on the bottom of the process chamber or the like and the upper surface may be hermetically coupled to the manifold 450 coupled to the lower end side of the housing 400.

The auxiliary support part 520 is formed in a substantially cylindrical shape and is installed on the upper surface of the main support part 510 and can be inserted into the substrate processing part 110 of the reactor 100. The auxiliary support unit 520 may be rotatably installed in association with a motor (not shown) so that the substrate 40 may be rotated during a substrate processing process to ensure uniformity of the semiconductor manufacturing process. An auxiliary heater (not shown) may be installed in the auxiliary support unit 520 to apply heat from the lower side of the substrate 40 during the substrate processing process to ensure process reliability. The substrate 40 stored in the boat 500 may be preheated by the auxiliary heater before the substrate processing process.

A plurality of the substrate supporting portions 530 may be provided along the edge of the auxiliary supporting portion 520 with a distance therebetween. A plurality of support grooves may be formed on the inner surface of the substrate supporter 530 facing the center of the auxiliary supporter 520 to correspond to each other. The edge of the substrate 40 is inserted into and supported by the support groove so that the plurality of substrates 40 can be stacked vertically on the boat 500.

The substrate stacking unit 500 is mounted on the lower end surface of the reactor 100 and the lower end surface of the manifold 450 having the upper end surface coupled to the lower end surface of the gas supply unit 200 and the gas exhaust unit 300, As shown in FIG. The gas supply pipe 210 of the gas supply unit 200 may be inserted into a gas supply communication hole (not shown) of the manifold 450 and may communicate with an external gas supply device, 310 may be inserted into the gas discharge communication hole (not shown) of the manifold 450 and communicate with an external gas discharge device.

When the upper surface of the main receiving part 510 of the substrate loading part 500 is coupled to the lower end surface side of the manifold 450 with the substrate loading part 500 rising, the substrate 40 is transferred to the substrate processing part 110, and the substrate processing section 110 may be sealed. A sealing member (not shown) may be interposed between the manifold 450 and the main receiving portion 510 of the substrate mounting portion 500 for stable sealing.

The present invention is characterized in that the gas discharge portion 300 includes a gas discharge induction portion 310 including a gas discharge port 315 through which the substrate processing gas is discharged. The gas discharge portion 300 includes the gas discharge inducing portion 310 because the gas discharge inducing portion 310 includes the gas discharge region 301 (see FIG. 4) functioning as a passage through which the substrate processing portion 110 and the gas are discharged, And acts as an interface between the substrate processing unit 100 and the gas discharging unit 300. As shown in FIG.

The gas discharge inducing part 310 may be integrally formed with the reactor 100 and may be formed to connect from one inner wall to the other inner wall of the reactor 100. And may be curved in the direction of the gas discharging part 300. In addition, The shape of the reactor 100 will be described later.

It is preferable that the gas discharge inducing part 310 has a curved shape and a semicircular shape in which the flat end face of the gas discharge inducing part 310 has a certain distance from the outer peripheral face of the substrate 40. [ In other words, it is preferable that the flat end surface of the gas discharge guide 310 has a curvature equal to the curvature of the substrate 40 and is parallel to the outer circumferential surface of the substrate 40.

A gas outlet 315 may be formed at a central portion of the gas discharge inducing part 310, which is a passage through which the substrate processing gas is discharged. The gas outlet 315 is preferably in the form of a slit extending in the vertical direction. As the gas outlet 315 has a slit shape extending in the vertical direction, a greater amount of the substrate processing gas can be discharged and the substrate processing gas in the substrate processing section 110 receives a strong pumping pressure and the gas outlet 315 ). ≪ / RTI >

4 is a plan sectional view showing a flow of a substrate processing gas in the reactor 100 according to an embodiment of the present invention.

Referring to FIG. 4, the substrate processing gas supplied from the gas supply unit 200 may ideally pass over the top of the substrate 40 along the path 7 to perform atomic layer deposition and discharge to the gas discharge unit 300 . The substrate processing gas supplied into the substrate processing unit 110 from the gas supply unit 200 and not properly sprayed toward the substrate 40 does not move along the inner wall of the reactor 100 and passes through the path 8 or the path 9 It is possible to move while being guided inward than the outer side of the substrate 40 as shown in Fig.

6 to 9) in which the shape of the flat cross section is longer than the longitudinal length of the reactor 40. The gas discharge inducing portion 310 (see FIG. 6 to FIG. 9) ) Strongly sucks the substrate processing gas. In other words, unlike the conventional process tube 10 shown in FIGS. 1 and 2, the gas discharge portion 300 has a wide gas discharge area 301 in the form of a tube containing hollow, The substrate processing unit 110 can more effectively suck the substrate processing gas from the substrate processing unit 110 and the gas discharge inducing unit 310 can discharge the substrate through the gas discharge port 315 at the interface between the substrate processing unit 110 and the gas discharging unit 300, And the flow channel is changed so as to move the process gas close to the central portion of the substrate 40. Thus, substrate processing gases do not migrate across the inner walls of the reactor 100, and more substrate processing gas can travel through the top of the substrate 40 to participate in atomic layer deposition, Efficiency can be increased.

5 is a perspective view illustrating a gas discharge guide unit 310 according to an embodiment of the present invention.

And may be curved in the direction of the gas discharging part 300. In addition, The gas outlets 315 (315a, 315b, 315c) formed through the gas outflow inducing portion 310 may be in the form of a slit extending in the vertical direction.

Referring to FIG. 5A, the gas outlet 315a may be formed to have a narrower width from the upper portion to the lower portion. Since the substrate processing gas is discharged to the outside through the discharge hole 350 connected to the pumping means (not shown), the vicinity of the manifold 450, i.e., the discharge hole 350 formed in the lower portion of the reactor 100, The pressure for sucking the process gas is the strongest, and the largest amount of the substrate process gas can be discharged. Accordingly, the width of the gas discharge port 315a is increased toward the upper portion of the gas discharge portion 300, so that a uniform amount of the substrate process gas can be discharged regardless of the height of the gas discharge portion 300. Thus, it is possible to provide a suction pressure at which substrate processing gas can pass at a uniform rate to all the substrates 40 of the batch type apparatus.

5 (b) and 5 (c), the gas outlets 315b and 315c are formed to have a narrower width from the top to the bottom, as in FIG. 5 (a) (315b, 315c) may be formed. Each of the gas outlets 315b and 315c may be formed so that the width of the gas outlets 315b and 315c located at the lower portion relative to the gas outlets 315b and 315c located at the upper portion is narrowed.

The number of the gas outlets 315 (315a, 315b, 315c), the number of the gas outlets 315a, 315b, 315c, Size, etc. can be changed.

Meanwhile, the shape of the flat section of the reactor 100 of the present invention may have at least two curvature radii. The fact that the shape of the flat section of the reactor 100 has at least two curvature radii means that a plurality of arcs having different curvatures are continuously connected to constitute the shape of the flat section of the reactor 100 .

Further, the present invention may be such that the shape of the flat section of the reactor 100 is such that at least two calls having a radius of curvature larger than the diameter of the substrate 40 are in contact with each other.

In addition, the present invention may be in the form of an ellipse having a short axis whose shape of the flat section of the reactor 100 is larger than the diameter of the substrate 40.

Figures 6 to 9 are top and cross-sectional views of a reactor 100 (100a, 100b, 100c, 100d) according to various embodiments of the present invention.

Referring to FIG. 6, the shape of the flat section of the reactor 100a may have a shape in which two arcs L1 and L2 having a radius of curvature larger than the diameter of the substrate 40 are tangent at points c1 and c2.

Unlike the conventional process tube 10 having a circular cross-sectional shape as shown in FIG. 2, the reactor 100a has a structure in which the gas supplied from the gas supply unit 200 has an incident angle to the inner wall of the reactor 100a, , It can be reflected at the inner wall of the reactor 100a and directed toward the gas discharge part 300 as shown by path a or path b. This is possible because the sum of the incident angle at which the gas supplied from the gas supply unit 200 is incident on the inner wall of the reactor 100a and the reflection angle reflected from the inner wall of the reactor 100a is constant. In other words, p1, which is the sum of the incident angle and the reflection angle of the path a, and p2, which is the sum of the incident angle and the reflection angle of the path b, may be substantially the same.

The reason why the sum of the incident angle and the reflection angle is constant is that the shape of the flat section of the reactor 100a is close to an ellipse and the gas supply part 200 and the gas discharge part 300 are arranged close to the focus position of the ellipse , The feature of the ellipse in which the two foci of the ellipse and the angle formed by the specific point of the ellipse is constant can be similarly applied.

Referring to FIG. 7, the shape of the flat section of the reactor 100b may have a shape of an ellipse having a minor axis larger than the diameter of the substrate 40. 7, the short axis s of the ellipse corresponds to the longitudinal length of the reactor 100b and the long axis 1 of the ellipse corresponds to the transverse length of the reactor 100b so that the long axis of the ellipse corresponds to the diameter of the substrate 40, It is natural that the shortening of the ellipse is greater than the shortening of the ellipse. The shape of an ellipse may be interpreted as an infinite number of arcs having different radii of curvature connected in series.

Unlike the conventional process tube 10 having a circular cross-sectional shape as shown in FIG. 2, the reactor 100b has a structure in which the gas supplied from the gas supply unit 200 has an incident angle to the inner wall of the reactor 100b, , It can be reflected at the inner wall of the reactor 100b and directed toward the gas discharge portion 300 as the path c or the path d. This is possible because the sum of the incident angle of the gas supplied from the gas supply unit 200 to the inner wall of the reactor 100b and the reflection angle of the gas reflected from the inner wall of the reactor 100b is constant. In other words, p3, which is the sum of the incident angle and the reflection angle of the path c, and p4, which is the sum of the incident angle and the reflection angle of the path d, may be the same.

The reason why the sum of the incident angle and the reflection angle is constant is because the shape of the flat section of the reactor 100b is elliptical and the gas supply part 200 and the gas discharge part 300 are arranged close to the focus position of the ellipse, And the angle between the two foci of the ellipse and the specific point of the ellipse is constant.

Referring to FIG. 8, the shape of the flat section of the reactor 100c is the same as that of FIG. 6 or 7 except that only the both ends are formed in a straight line L4. That is, the portion L3 excluding the straight line L4 at both ends may have the shape of two arcs or ellipses having a radius of curvature larger than the diameter of the substrate 40.

The reactor 100c may also have substantially the same principle as the reactors 100a and 100b described above and the p5 which is the sum of the incident angle and the reflection angle of the path e and the reflection angle p6 which is the sum of the incident angle and the reflection angle of the path f may be substantially the same, Even if the supplied gas is supplied at an incident angle to the inner wall of the reactor 100c, it can be reflected at the inner wall of the reactor 100c and directed to the gas outlet 300 as the path e or the path f.

Referring to FIG. 9, the shape of the flat section of the reactor 100d is the same as that of FIG. 6 or 7 in which both end portions are formed in the arc shape L6. That is, the arc L6 at both ends and the portion L5 excluding the arc L6 may have the shape of four arcs or ellipses having a radius of curvature larger than the diameter of the substrate 40. Of course, the curvatures of the four arcs L5 and L6 may all be the same or may have different curvatures.

The reactor 100d can also have substantially the same principle as the reactors 100a and 100b described above and the p7 which is the sum of the incident angle and the reflection angle of the path g and the reflection angle p8 which is the sum of the incident angle and the reflection angle of the path h can be substantially the same, Even if the supplied gas is supplied at an incident angle to the inner wall of the reactor 100d, it can be reflected at the inner wall of the reactor 100d and directed to the gas outlet 300 as shown by path g or path h.

As described above, in the present invention, the reactor 100 (100a-100d) has a flat cross-section so that the gas supplied from the gas supply unit 200 can continuously flow in the substrate processing unit 110, So that the emission efficiency of the substrate processing gas can be increased.

At the same time, the shape of the gas discharge guide portion 310 and the suction pressure of the gas discharge portion 300 allow the substrate processing gas to pass through the upper portion of the substrate 40 without moving along the inner wall of the reaction tube 100 There is an advantage that the deposition can be performed at a uniform thickness throughout the substrate 40 and deposition can be performed quickly without further deposition being performed only in a specific portion of the substrate 40. [

10 is a perspective view showing a reactor of a substrate processing apparatus in which a reinforcing rib is coupled to an upper surface of a reactor 100 according to an embodiment of the present invention.

Unlike the process tube 10 of the conventional batch substrate processing apparatus shown in FIG. 1 is vertical, the reactor 100 of the present invention may have a flat top surface. The top surface of the reactor 100 is flattened so that the upper space 12 (see FIG. 1) of the vertical chamber 11 in which the substrate 40 can not be accommodated is excluded, There is an advantage of reducing the volume. However, in order to solve the problem of durability that can occur due to the inability to evenly distribute the internal pressure as compared with the conventional vertical chamber 11, the batch type substrate processing apparatus of the present invention includes a plurality And a plurality of reinforcing ribs 120 and 130 are coupled.

The material of the reinforcing ribs 120 and 130 may be the same as the material of the reactor 100. However, the material of the reinforcing ribs 120 and 130 is not limited to the material of the reactor 100. Various materials may be employed within the scope of the purpose of supporting the upper surface of the reactor 100 There will be.

The reinforcing ribs 120 and 130 may be disposed on the upper surface of the reactor 100 so as to cross the plurality of reinforcing ribs 121 and 122 as shown in FIG. A plurality of reinforcing ribs 131, 132 and 133 may be arranged in parallel to be coupled to the upper surface of the reactor 100. The reinforcing ribs 120 and 130 may be coupled to the upper surface of the reactor 100 using a welding method or the like.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

40: substrate
100: reactor
110: substrate processing section
120, 130: reinforcing rib
200: gas supply part
210: gas supply pipe
220: Discharge ball
300: gas discharge portion
301: gas discharge area
310: gas discharge induction portion
315: gas outlet
350: Exhaust hole
400: housing
450: manifold
500: substrate loading section

Claims (14)

A reactor of a substrate processing apparatus in which at least one substrate is subjected to substrate processing, wherein a flat cross section of the reactor has an elliptical shape having a minor axis larger than the diameter of the substrate,
The reactor comprises:
A substrate processing unit that is a space in which the substrate is processed;
A gas supply unit for supplying a substrate processing gas to the substrate processing unit; And
And a gas discharge portion for discharging the substrate processing gas supplied to the substrate processing portion
≪ / RTI &
Wherein the gas discharge portion is disposed in a space between the peripheral portion of the substrate and the inner wall of the reactor, at one side of the substrate processing portion,
Wherein the gas supply unit is disposed on the other side of the substrate processing unit so as to face the gas discharge unit,
Wherein the gas discharge portion includes a gas discharge induction portion including a gas discharge port through which the substrate processing gas is discharged, and the gas discharge induction portion is disposed at a boundary between the substrate processing portion and the gas discharge portion, And is curved in the direction of the gas discharge portion. A reactor of a substrate processing apparatus in which at least one substrate is processed, wherein a flat cross-section of the reactor has at least two arc-shaped shapes having a radius of curvature larger than the diameter of the substrate,
The reactor comprises:
A substrate processing unit that is a space in which the substrate is processed;
A gas supply unit for supplying a substrate processing gas to the substrate processing unit; And
And a gas discharge portion for discharging the substrate processing gas supplied to the substrate processing portion
≪ / RTI &
Wherein the gas discharge portion is disposed in a space between the peripheral portion of the substrate and the inner wall of the reactor, at one side of the substrate processing portion,
Wherein the gas supply unit is disposed on the other side of the substrate processing unit so as to face the gas discharge unit,
Wherein the gas discharge portion includes a gas discharge induction portion including a gas discharge port through which the substrate processing gas is discharged, and the gas discharge induction portion is disposed at a boundary between the substrate processing portion and the gas discharge portion, And is curved in the direction of the gas discharge portion. A reactor of a substrate processing apparatus in which at least one substrate is processed, the flat section of the reactor having a shape including at least two curvature radii,
The reactor comprises:
A substrate processing unit that is a space in which the substrate is processed;
A gas supply unit for supplying a substrate processing gas to the substrate processing unit; And
And a gas discharge portion for discharging the substrate processing gas supplied to the substrate processing portion
≪ / RTI &
Wherein the gas discharge portion is disposed in a space between the peripheral portion of the substrate and the inner wall of the reactor, at one side of the substrate processing portion,
Wherein the gas supply unit is disposed on the other side of the substrate processing unit so as to face the gas discharge unit,
Wherein the gas discharge portion includes a gas discharge induction portion including a gas discharge port through which the substrate processing gas is discharged, and the gas discharge induction portion is disposed at a boundary between the substrate processing portion and the gas discharge portion, And is curved in the direction of the gas discharge portion. delete delete 4. The method according to any one of claims 1 to 3,
Wherein the gas discharge inducing portion has a flat cross-section having a semicircular shape having a predetermined distance from an outer circumferential surface of the substrate. 4. The method according to any one of claims 1 to 3,
Wherein the gas supply unit includes at least one gas supply pipe formed along a longitudinal direction of the gas supply unit, and a plurality of discharge holes formed at one side of the gas supply pipe toward the substrate. 4. The method according to any one of claims 1 to 3,
Wherein the gas outlet is in the form of a slit extending in a vertical direction. 9. The method of claim 8,
Wherein the gas outlet is narrower from the upper part to the lower part. 9. The method of claim 8,
Wherein the gas discharge induction portion includes a plurality of gas discharge ports formed in a vertical direction, and each gas discharge port narrows in width from an upper portion to a lower portion. 4. The method according to any one of claims 1 to 3,
Wherein the reactor has a flat top surface. 12. The method of claim 11,
And a plurality of reinforcing ribs are coupled to the upper surface of the reactor. 13. The method of claim 12,
Wherein the plurality of reinforcing ribs are disposed so as to intersect or parallel to each other and are coupled to the upper surface of the substrate processing unit. 4. The method according to any one of claims 1 to 3,
Characterized in that the reactor comprises at least one of quartz, stainless steel (SUS), aluminum, graphite, silicon carbide or aluminum oxide. Reactor of the device.
KR1020150134711A 2015-09-23 2015-09-23 Reactor of apparatus for processing substrate KR101826814B1 (en)

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KR102269364B1 (en) * 2017-05-30 2021-06-28 주식회사 원익아이피에스 Reactor of apparatus for processing substrate
KR102269365B1 (en) * 2017-05-30 2021-06-28 주식회사 원익아이피에스 Reactor of apparatus for processing substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111462A (en) * 2002-09-13 2004-04-08 Koyo Thermo System Kk Heat treatment apparatus for semiconductor wafer
KR101396601B1 (en) * 2013-02-26 2014-05-20 주식회사 테라세미콘 Batch type apparatus for processing substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111462A (en) * 2002-09-13 2004-04-08 Koyo Thermo System Kk Heat treatment apparatus for semiconductor wafer
KR101396601B1 (en) * 2013-02-26 2014-05-20 주식회사 테라세미콘 Batch type apparatus for processing substrate

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