CN104878367A - Reaction cavity and chemical vapor deposition equipment - Google Patents
Reaction cavity and chemical vapor deposition equipment Download PDFInfo
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- CN104878367A CN104878367A CN201510309138.4A CN201510309138A CN104878367A CN 104878367 A CN104878367 A CN 104878367A CN 201510309138 A CN201510309138 A CN 201510309138A CN 104878367 A CN104878367 A CN 104878367A
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- wall
- reaction chamber
- heater strip
- chemical vapor
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Abstract
The invention provides a reaction cavity and chemical vapor deposition equipment. The reaction cavity comprises a base, a first wall, a heating wire and a second wall, wherein the first wall, the heating wire and the second wall are sequentially arranged on the base from inside to outside; a sealed accommodating space is formed between the first wall and the base; the middle of the second wall comprises a vacuum structure. According to the reaction cavity and the chemical vapor deposition equipment, the heat insulation is realized through the vacuum structure arranged in the second wall, so that the heat generated by the heating wire is respectively transmitted to the first wall, the temperature in the formed accommodating space is more uniform, and the thickness uniformity of a film formed in a reacted wafer is better.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, particularly relate to a kind of reaction chamber and chemical vapor depsotition equipment.
Background technology
Chemical vapour deposition (Chemical Vapor Deposition, being called for short CVD) equipment is for the preparation of various thin-film material, the primary process preparing thin-film material is as follows: reactant gases, after being transported to reaction chamber, chemical reaction occurs, generate the wafer surface that solid matter is deposited on heating, thus form various film.
Reaction chamber is most important integral part in CVD equipment, and concrete structure please refer to Fig. 1, and it is the cross-sectional view of the reaction chamber of prior art.As shown in Figure 1, reaction chamber generally comprises base 1, inwall 2, heater strip 3 and outer wall 4, and inwall 2, heater strip 3 and outer wall 4 are arranged on base 1 successively from inside to outside.Carrying out in chemical vapor deposition processes, be placed on by wafer on base 1, heater strip 3 pairs of reaction chambers heat, and pass into reactant gases, thus react on wafer by inlet pipe (not shown) in reaction chamber, form film.
Reaction chamber may be used for the chemical vapor depsotition equipment such as MOCVD (MOCVD), plasma enhanced chemical vapor deposition (PECVD).But find in chemical vapor deposition processes, non-uniform temperature in existing reaction chamber, thin film deposition poor effect, the thickness evenness (Thickness uniformity) of the film of deposition has much room for improvement.
Summary of the invention
The object of the invention is to, a kind of reaction chamber and chemical vapor depsotition equipment are provided, solve the problem of the non-uniform temperature in prior art in reaction chamber.
For solving the problems of the technologies described above, the invention provides a kind of reaction chamber, comprising base, first wall, heater strip and the second wall, described first wall, described heater strip and described second wall set gradually on described base from inside to outside; Accommodation space is formed, for placing wafer between described first wall and described base; Comprise vacuum structure in the middle of described second wall, make the homogeneous temperature in described accommodation space.
Optionally, the pressure of the vacuum structure in described second wall is 1KPa-100KPa.
Optionally, the material of described second wall is quartzy or ceramic.
Optionally, the heat resisting temperature of described first wall is 500 DEG C-1200 DEG C.
Optionally, the material of described first wall is quartzy or ceramic.
Optionally, described heater strip is tungsten filament, and the temperature that heating energy reaches is 1200 DEG C.
Optionally, described base comprises water-cooled tube and mounting block.
Optionally, described second wall comprises internal layer and skin, forms described vacuum structure between internal layer and skin.
Optionally, described first wall, described heater strip and described second wall are concentric cylindrical structure.
Accordingly, the present invention also provides a kind of chemical vapor depsotition equipment, and described chemical vapor depsotition equipment adopts above-mentioned reaction chamber.
Reaction chamber provided by the invention and chemical vapor depsotition equipment, reaction chamber comprises base, first wall, heater strip and the second wall, described first wall, heater strip and described second wall set gradually on described base from inside to outside, form accommodation space between described first wall and described base, in the middle of described second wall, comprise vacuum structure.In the present invention, undertaken heat insulation by the vacuum structure in the second wall, the heat that heater strip is produced all to first wall transmission, thus makes the temperature in the accommodation space of formation more even, thus the thickness evenness of the film formed on the wafer of reaction is better.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of reaction chamber of the prior art;
Fig. 2 is the cross-sectional view of reaction chamber in one embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, reaction chamber of the present invention and chemical vapor depsotition equipment are described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
Core concept of the present invention is, the reaction chamber provided comprises base, first wall, heater strip and the second wall, and described first wall, heater strip and described second wall set gradually on described base from inside to outside; Accommodation space is comprised, for placing wafer between described first wall and described base; Described second wall intermediate formation vacuum structure, makes the homogeneous temperature in described accommodation space.In the present invention, undertaken heat insulation by the vacuum structure in the second wall, the heat that heater strip is produced all to first wall transmission, thus makes the temperature in the accommodation space of formation more even, thus the thickness evenness of the film formed on the wafer of reaction is better.
Hereafter composition graphs 2 is specifically described reaction chamber of the present invention and chemical vapor depsotition equipment.
The cross-section structure of reaction chamber is with reference to shown in figure 2, and reaction chamber comprises base 10, first wall 20, heater strip 30 and the second wall 40, and described first wall 20, described heater strip 30 and described second wall 40 set gradually on described base 10 from inside to outside.In the present embodiment, described first wall 20, described heater strip 30 and described second wall 40 are concentric cylindrical structure.Accommodation space 50 is formed between described first wall 20 and described base 10, accommodation space 50 is for placing the wafer needing to carry out chemical reaction, heater strip 30 is between first wall 20 and the second wall 40, there is provided heat by first wall 20 to accommodation space 50 after heating, thus provide condition for wafer carries out chemical reaction.
In addition, described base 10 also includes mounting block 12, after wafer being put into accommodation space 50, with mounting block 12 firm banking 10.Then, heater strip 30 heats, and after being raised to the temperature preset, passing into and needs reactant gases, carry out chemical vapor deposition method, at wafer surface deposit film in accommodation space 50.It should be noted that, described heater strip 30 adopts tungsten filament, and the temperature that its heating energy reaches is 1200 DEG C, to coordinate the needs of various reaction.General, wafer is silicon substrate, and the fusing point of silicon is about 1400 DEG C, thus the heat resisting temperature of described first wall 20 can be made to be 500 DEG C-1200 DEG C, be preferably 1200 DEG C, at this temperature, accommodate wafer carry out the chemical reaction of various different condition, and do not affect silicon substrate.In the present embodiment, the material of described first wall 20 is the heat-stable material such as quartz or pottery.
Because heater strip 30 can dispel the heat towards periphery, the heat making the every part in heater strip 30 be supplied to chamber inner wall 20 there are differences, thus the non-uniform temperature in accommodation space 50, cause the non-uniform temperature in reaction process on wafer, make to carry out in chemical vapor deposition processes, on wafer, the speed of regional deposition there are differences, thus makes the in uneven thickness of the film that wafer is formed.But in the present invention, described second wall 40 comprises internal layer 42 and a skin 43, and internal layer 42 and outer 43 intermediate formation vacuum structures 41, vacuum structure 41 is for heat insulation, thus heater strip 30 does not externally transmit heat radiation, and the temperature in described accommodation space 50 can be made more even.In the present invention, the pressure arranging the vacuum structure 41 in described second wall 40 is 1KPa-100KPa, is preferably 10KPa, be understandable that, the pressure of vacuum structure 41 is less, and namely the vacuum tightness of vacuum structure 41 is higher, thus the effect of heat insulation of vacuum structure 41 is better.In addition, the internal layer 42 of described second wall 40 and the material of outer 43 are quartzy or ceramic, the thickness D of the described vacuum structure 41 formed is 10cm-30cm, and makes the pressure that internal layer 42 and outer 43 pressure differences that can bear vacuum structure 41 and outside produce.
It should be noted that, owing to passing through water-cooled tube 11 in base 10, thus make the temperature bottom reaction chamber lower, the thickness evenness of the film that wafer is formed is more bad.But, as can be seen from Figure 2, in the present embodiment, the outside of whole reaction chamber is all formed with vacuum structure 41, comprise the top of reaction chamber, vacuum structure 41 is all arranged at sidepiece and bottom, whole heater strip 30 is isolated with outside atmosphere, thus heater strip 30 externally can not be dispelled the heat by the second wall, the heat that heater strip 30 produces all transmits to the first wall 20 of chamber, the heat that the every part of heater strip 30 self produces is identical, thus the heat passing to the every part of first wall 20 is identical, make the homogeneous temperature in accommodation space 50, thus the temperature in each region is more even on wafer in reaction chamber, the speed that on wafer, regional carries out chemical vapour deposition also reaches unanimity, make the thickness of the film formed identical, therefore, the thickness evenness of the film formed on the wafer of reaction is better.
Continue with reference to shown in figure 2, described base 10 comprises water-cooled tube 11, valve is provided with in water-cooled tube 11, opening the valve of water-cooled tube 11 after completion of the reaction, pass into water coolant, for having reacted rear, accommodation space 50 being cooled, wafer is cooled, chip temperature drops to close to after room temperature, wafer can be taken out from reaction chamber, complete depositing operation.Relative to the structure of reaction chamber of the prior art, in the present invention, heater strip 30 does not directly contact with between base, makes the impact that can not be subject to water-cooled tube bottom heater strip 30, thus the temperature bottom accommodation space can other parts be consistent, and ensure that the homogeneity of temperature.
Accordingly, the present invention also provides a kind of chemical vapor depsotition equipment, and described chemical vapor depsotition equipment comprises the structures such as inlet pipe, reaction chamber and vapor pipe, and described vapor deposition apparatus adopts above-mentioned reaction chamber.Thus carry out in the process of chemical vapour deposition at wafer, by vacuum structure and external insulation in reaction chamber, the temperature in reaction chamber is more even, makes the homogeneity of the thickness of the film of deposition on wafer better.
In sum, reaction chamber provided by the invention and chemical vapor depsotition equipment, reaction chamber comprises base, first wall, heater strip and the second wall, and described first wall, described heater strip and described second wall set gradually on described base from inside to outside; Accommodation space is formed, for placing wafer between described first wall and described base; Comprise vacuum structure in the middle of described second wall, make the homogeneous temperature in described accommodation space.In the present invention, undertaken heat insulation by the vacuum structure in the second wall, the heat that heater strip is produced all to first wall transmission, thus makes the temperature in the accommodation space of formation more even, thus the thickness evenness of the film formed on the wafer of reaction is better.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a reaction chamber, it is characterized in that, comprise base, first wall, heater strip and the second wall, described first wall, described heater strip and described second wall set gradually on described base from inside to outside, form accommodation space between described first wall and described base, in the middle of described second wall, comprise vacuum structure.
2. reaction chamber as claimed in claim 1, it is characterized in that, the pressure of the vacuum structure in described second wall is 1KPa-100KPa.
3. reaction chamber as claimed in claim 2, is characterized in that, the material of described second wall is quartzy or ceramic.
4. reaction chamber as claimed in claim 1, it is characterized in that, the heat resisting temperature of described first wall is 500 DEG C-1200 DEG C.
5. reaction chamber as claimed in claim 4, is characterized in that, the material of described first wall is quartzy or ceramic.
6. reaction chamber as claimed in claim 1, it is characterized in that, described heater strip is tungsten filament, and the temperature that heating energy reaches is 1200 DEG C.
7. reaction chamber as claimed in claim 1, it is characterized in that, described base comprises water-cooled tube and mounting block.
8. reaction chamber as claimed in claim 1, it is characterized in that, described second wall comprises internal layer and skin, forms described vacuum structure between internal layer and skin.
9. as the reaction chamber in claim 1-8 as described in any one, it is characterized in that, described first wall, described heater strip and described second wall are concentric cylindrical structure.
10. a chemical vapor depsotition equipment, comprises inlet pipe, reaction chamber and vapor pipe, and wherein, described chemical vapor depsotition equipment adopts as the reaction chamber in claim 1-9 as described in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510309138.4A CN104878367A (en) | 2015-06-07 | 2015-06-07 | Reaction cavity and chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510309138.4A CN104878367A (en) | 2015-06-07 | 2015-06-07 | Reaction cavity and chemical vapor deposition equipment |
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| CN104878367A true CN104878367A (en) | 2015-09-02 |
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| CN201510309138.4A Pending CN104878367A (en) | 2015-06-07 | 2015-06-07 | Reaction cavity and chemical vapor deposition equipment |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108060409A (en) * | 2017-12-11 | 2018-05-22 | 湖南顶立科技有限公司 | A kind of settling chamber and chemical gas-phase deposition system suitable for annular workpieces |
| CN108517512A (en) * | 2018-03-09 | 2018-09-11 | 昆山国显光电有限公司 | A kind of chemical vapor depsotition equipment and its reaction chamber |
| CN109881187A (en) * | 2019-03-06 | 2019-06-14 | 北京捷造光电技术有限公司 | A kind of vapor deposition chamber |
| CN109881185A (en) * | 2019-03-06 | 2019-06-14 | 北京捷造光电技术有限公司 | A kind of vapor deposition reaction device |
| CN110079786A (en) * | 2019-06-03 | 2019-08-02 | 杭州睿清环保科技有限公司 | It is used to prepare the device of the hot wall HF CVD of large-area diamond film |
| CN115354300A (en) * | 2022-08-25 | 2022-11-18 | 拓荆科技(上海)有限公司 | Thin film deposition apparatus |
| CN116437507A (en) * | 2023-06-13 | 2023-07-14 | 江苏微导纳米科技股份有限公司 | Heating equipment, semiconductor coating equipment and heating method |
-
2015
- 2015-06-07 CN CN201510309138.4A patent/CN104878367A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108060409A (en) * | 2017-12-11 | 2018-05-22 | 湖南顶立科技有限公司 | A kind of settling chamber and chemical gas-phase deposition system suitable for annular workpieces |
| CN108517512A (en) * | 2018-03-09 | 2018-09-11 | 昆山国显光电有限公司 | A kind of chemical vapor depsotition equipment and its reaction chamber |
| CN109881187A (en) * | 2019-03-06 | 2019-06-14 | 北京捷造光电技术有限公司 | A kind of vapor deposition chamber |
| CN109881185A (en) * | 2019-03-06 | 2019-06-14 | 北京捷造光电技术有限公司 | A kind of vapor deposition reaction device |
| CN110079786A (en) * | 2019-06-03 | 2019-08-02 | 杭州睿清环保科技有限公司 | It is used to prepare the device of the hot wall HF CVD of large-area diamond film |
| CN115354300A (en) * | 2022-08-25 | 2022-11-18 | 拓荆科技(上海)有限公司 | Thin film deposition apparatus |
| CN115354300B (en) * | 2022-08-25 | 2023-11-21 | 拓荆科技(上海)有限公司 | Thin film deposition apparatus |
| CN116437507A (en) * | 2023-06-13 | 2023-07-14 | 江苏微导纳米科技股份有限公司 | Heating equipment, semiconductor coating equipment and heating method |
| CN116437507B (en) * | 2023-06-13 | 2023-09-22 | 江苏微导纳米科技股份有限公司 | Heating equipment for semiconductor, semiconductor coating equipment and heating method |
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Application publication date: 20150902 |
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