CN108060409A - A kind of settling chamber and chemical gas-phase deposition system suitable for annular workpieces - Google Patents
A kind of settling chamber and chemical gas-phase deposition system suitable for annular workpieces Download PDFInfo
- Publication number
- CN108060409A CN108060409A CN201711309802.0A CN201711309802A CN108060409A CN 108060409 A CN108060409 A CN 108060409A CN 201711309802 A CN201711309802 A CN 201711309802A CN 108060409 A CN108060409 A CN 108060409A
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- Prior art keywords
- deposition
- annular workpieces
- settling chamber
- insulating layer
- moist closet
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A kind of settling chamber suitable for annular workpieces of disclosure, including：Moist closet main body；Arranged on the in vivo inner thermal insulating layer of moist closet master；Deposition space is formed between moist closet main body and inner thermal insulating layer；For feeding the deposition jet portion of process gas into deposition space；Heating structure between moist closet main body and inner thermal insulating layer；There is the deposition position for placing annular workpieces in deposition space.The settling chamber suitable for annular workpieces that the application provides compared with prior art, can improve the utilization rate of process gas, reduce depositing device energy consumption, the application also provides a kind of chemical gas-phase deposition system, equally with above-mentioned advantageous effect.
Description
Technical field
It is more specifically more particularly to a kind of suitable for annular workpieces this application involves chemical vapour deposition technique field
Settling chamber, the application further relates to a kind of chemical gas-phase deposition system.
Background technology
Chemical vapor deposition is to prepare the important method of functional material, structural material, and principle is will to participate in chemically reacting
Substance be heated to certain technological temperature, vacuum pump extract system generate graviational interaction under, will mixing source of the gas introduce deposition
Room is reacted, and the crystalline solid of generation is made to be deposited on the substrate of within the deposition chamber.
During the carbon-to-carbon workpiece of tubular is deposited using conventional chemical vapor depositing device, due to being inside it
Hollow structure, carbon-to-carbon annular workpieces inner space is bigger, and the energy consumption for causing depositing device is larger, not only wastes substantial amounts of
Process gas, and deposition effect is also difficult to achieve the desired results.
Therefore it provides a kind of settling chamber suitable for annular workpieces, the utilization rate of process gas can be improved, reduction is set
Standby energy consumption, has become the technical issues of those skilled in the art are urgently to be resolved hurrily.
The content of the invention
In order to solve the above technical problems, the application provides a kind of settling chamber suitable for annular workpieces, work can be improved
The utilization rate of skill gas reduces equipment energy consumption, and the application also provides a kind of chemical gas-phase deposition system, equally with above-mentioned beneficial
Effect.
The technical solution that the application provides is as follows：
A kind of settling chamber suitable for annular workpieces, including：Moist closet main body；Arranged on the in vivo inside holding of moist closet master
Layer；Deposition space is formed between moist closet main body and inner thermal insulating layer；
For feeding the deposition jet portion of process gas to deposition space；
Heating structure between moist closet main body and inner thermal insulating layer；
There is the deposition position for placing annular workpieces in deposition space.
Further, in a kind of preferred mode of the present invention, deposition position is arranged between inner thermal insulating layer and heating structure.
Further, in a kind of preferred mode of the present invention, deposition position be arranged at heating structure and moist closet main body it
Between.
Further, in a kind of preferred mode of the present invention, inner thermal insulating layer is tube structure, and inner thermal insulating layer bottom is with protecting
Greenhouse body fits closely, being formed with the space circulated for process gas between moist closet main body at the top of inner thermal insulating layer.
Further, in a kind of preferred mode of the present invention, deposition jet portion is arranged on moist closet bottom part body and is located at
With the corresponding position of deposition space.
Further, in a kind of preferred mode of the present invention, deposition jet portion includes：Deposition nozzle, with deposition nozzle
The jet pipeline of connection, the gas puff Z-pinch source with jet pipeline connection.
Further, in a kind of preferred mode of the present invention, deposition nozzle at least two, and it is arranged on inner thermal insulating layer
On.
Further, in a kind of preferred mode of the present invention, deposition nozzle, the jet pipeline being connected with deposition nozzle,
With the gas puff Z-pinch source of jet pipeline connection.
Further, in a kind of preferred mode of the present invention, deposition nozzle at least two, and it is arranged on moist closet master
On body.
A kind of chemical gas-phase deposition system, including：Power air-channel system, technique air-channel system, electric-control system, tail gas condensing
And tar trap, water-cooling system, vacuum system, furnace body is interior to be equipped with the settling chamber as described above for being suitable for annular workpieces.
A kind of settling chamber suitable for annular workpieces provided by the invention, it is compared with prior art, of the present invention suitable
Include for the settling chamber of annular workpieces：Moist closet main body, moist closet main body is interior to be equipped with inner thermal insulating layer, moist closet main body and interior guarantor
Deposition space is formed between warm layer, settling chamber is equipped with deposition jet portion, and deposition jet portion can be exclusively used in feeding to deposition space
Process gas, the interior deposition position for having to place annular workpieces of deposition space, in this way, the setting due to inner thermal insulating layer so that
The spatial volume of the present heating of annular workpieces has obtained apparent diminution, the energy consumption of equipment heating can be greatly lowered, together
When process deposits runner more close to the annular construction member that need to be deposited, the carbon atom adhesive rate that process gas provides is high, so as to
Process gas utilization rate height is considerably improved, largely reduces the consumption of the energy.
Description of the drawings
It in order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of application, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the schematic diagram for the settling chamber suitable for annular workpieces that the embodiment of the present invention one provides；
Fig. 2 is the schematic diagram of the settling chamber provided by Embodiment 2 of the present invention suitable for annular workpieces；
Fig. 3 is the schematic diagram for the settling chamber suitable for annular workpieces that the embodiment of the present invention three provides；
Fig. 4 is the schematic diagram for the settling chamber suitable for annular workpieces that the embodiment of the present invention four provides；
Fig. 5 is the schematic diagram of chemical gas-phase deposition system provided in an embodiment of the present invention；
Fig. 6 is another schematic diagram of chemical gas-phase deposition system provided in an embodiment of the present invention.
Specific embodiment
It is real below in conjunction with the application in order to which those skilled in the art is made to more fully understand the technical solution in the application
The technical solution in the embodiment of the present application is clearly and completely described in the attached drawing applied in example, it is clear that described embodiment
The only part of the embodiment of the application, instead of all the embodiments.Based on the embodiment in the application, this field is common
Technical staff's all other embodiments obtained without making creative work belong to the model of the application protection
It encloses.
At present, for existing chemical vapour deposition technique, in carbon-to-carbon annular construction member depositing operation, due to it
Inside is hollow, is deposited using conventional chemical vapor depositing device, due to having substantial amounts of space inside annular construction member,
Not only so that the energy consumption of depositing device is larger, and the carbon atom adhesive rate that process gas provides is low, and process gas utilization rate is low.
To overcome above-mentioned technical problem, a kind of settling chamber suitable for annular workpieces provided in an embodiment of the present invention, with showing
There is technology to compare, including：Moist closet main body 1, moist closet main body 1 is interior to be equipped with inner thermal insulating layer 2, moist closet main body 1 and inner thermal insulating layer 2
Between form deposition space 3, settling chamber is equipped with deposition jet portion 4, and deposits jet portion 4 and can be exclusively used in feeding to deposition space 3
Process gas has the deposition position 31 for placing annular workpieces 6 in deposition space 3, in this way, due to the setting of inner thermal insulating layer 2,
So that the spatial volume of the present heating of annular workpieces 6 has obtained apparent diminution, the energy consumption of equipment heating can be greatly reduced,
For the runner of process deposits more close to the annular construction member that need to be deposited, the carbon atom adhesive rate that process gas provides is high, shows simultaneously
It improves process gas utilization rate height with writing, largely reduces the consumption of the energy.
Embodiment one；
As shown in Figure 1, the settling chamber suitable for annular workpieces that the embodiment of the present invention one provides, is specially that " inner ring heats
Deposit structure type ", including：Moist closet main body 1；Inner thermal insulating layer 2 in moist closet main body 1；Moist closet main body 1 and interior guarantor
Deposition space 3 is formed between warm layer 2；For feeding the deposition jet portion 4 of process gas to deposition space 3；Arranged on moist closet master
Heating structure 5 between body 1 and inner thermal insulating layer 2；There is the deposition position 31 for placing annular workpieces 6 in deposition space 3.
Specifically, deposition position 31 is arranged between inner thermal insulating layer 2 and heating structure 5.
Specifically, inner thermal insulating layer 2 is tube structure, and 2 bottom of inner thermal insulating layer is fitted closely with moist closet main body 1, inside holding
The space for process gas circulation is formed between 2 top of layer and moist closet main body 1.
More specifically, jet portion 4 is deposited to be arranged on 1 bottom of moist closet main body and be located at and 3 corresponding position of deposition space
It puts.
Embodiment two
As shown in Fig. 2, the settling chamber provided by Embodiment 2 of the present invention suitable for annular workpieces, is specially that " outer shroud heats
Deposit structure type ", including：Moist closet main body 1；Inner thermal insulating layer 2 in moist closet main body 1；Moist closet main body 1 and interior guarantor
Deposition space 3 is formed between warm layer 2；For feeding the deposition jet portion 4 of process gas to deposition space 3；Arranged on moist closet master
Heating structure 5 between body 1 and inner thermal insulating layer 2；There is the deposition position 31 for placing annular workpieces 6 in deposition space 3.
Specifically, deposition position 31 is arranged between moist closet main body 1 and heating structure 5.
Specifically, inner thermal insulating layer 2 is tube structure, and 2 bottom of inner thermal insulating layer is fitted closely with moist closet main body 1, inside holding
The space for process gas circulation is formed between 2 top of layer and moist closet main body 1.
More specifically, jet portion 4 is deposited to be arranged on 1 bottom of moist closet main body and be located at and 3 corresponding position of deposition space
It puts.
Embodiment three：
As shown in figure 3, the embodiment of the present invention three provides a kind of settling chamber suitable for annular workpieces, it is specially that " inner ring adds
Heat deposition structure type ", including：Moist closet main body 1；Inner thermal insulating layer 2 in moist closet main body 1；Moist closet main body 1 with it is interior
Deposition space 3 is formed between insulating layer 2；For feeding the deposition jet portion 4 of process gas to deposition space 3；Arranged on moist closet
Heating structure 5 between main body 1 and inner thermal insulating layer 2；There is the deposition position 31 for placing annular workpieces 6 in deposition space 3.
Specifically, deposition position 31 is arranged between inner thermal insulating layer 2 and heating structure 5.
Specifically, inner thermal insulating layer 2 is tube structure, and 2 bottom of inner thermal insulating layer is fitted closely with moist closet main body 1, inside holding
The space for process gas circulation is formed between 2 top of layer and moist closet main body 1.
Specifically, depositing jet portion 4 includes：Deposition nozzle 41, the jet pipeline 42 connected with deposition nozzle, with air jet pipe
The gas puff Z-pinch source of road connection.
More specifically, deposition nozzle 41 at least two, and be arranged on inner thermal insulating layer 2.
It should be noted that in the present embodiment, deposition nozzle 41 can be arranged at inner thermal insulating layer 2 and take up an official post according to actual needs
It anticipates appropriate position, deposition nozzle 41 can be in different elevation of waters on inner thermal insulating layer 2, to maintain within the deposition chamber different
The freshness of level locations process gas is overcome in big height scale toroidal workpiece depositing operation, because of top process gas
Freshness difference and the problem of influence processing quality.
, it is necessary to which explanation, in traditional chemical vapor depsotition equipment, deposition nozzle is generally set in the present embodiment three
It puts in the bottom of depositing device, suitable for the not high charcoal-charcoal/charcoal component of height dimension, if depositing charcoal-charcoal/charcoal component of big height size,
The freshness of the region process gas on depositing device top is poor, and the concentration of fresh carbon atom is relatively low, deposition trapping carbon atom
Efficiency can be substantially reduced, in addition, also having substantial amounts of carbon black attachment, severely impact processing quality.
The settling chamber suitable for annular workpieces that the present embodiment three provides is particularly suitable for charcoal-charcoal structure of big height size
Part, in settling chamber provided in this embodiment, the internal deposition nozzle 41 for being provided with multilayer height can keep within the deposition chamber
The freshness of the process gas at different height position, while the attachment of carbon black can be reduced or even avoid, largely improve
The carbon atom adhesive rate that process gas provides, and significantly reduce the energy consumption of equipment.
Example IV：
As shown in figure 4, the settling chamber suitable for annular workpieces that the embodiment of the present invention four provides, is specially that " outer shroud heats
Deposition structure type " includes：Moist closet main body 1；Inner thermal insulating layer 2 in moist closet main body 1；Moist closet main body 1 and interior guarantor
Deposition space 3 is formed between warm layer 2；For feeding the deposition jet portion 4 of process gas to deposition space 3；Arranged on moist closet master
Heating structure 5 between body 1 and inner thermal insulating layer 2；There is the deposition position 31 for placing annular workpieces 6 in deposition space 3.
Specifically, deposition position 31 is arranged between moist closet main body 1 and heating structure 5.
Specifically, inner thermal insulating layer 2 is tube structure, and 2 bottom of inner thermal insulating layer is fitted closely with moist closet main body 1, inside holding
The space for process gas circulation is formed between 2 top of layer and moist closet main body 1.
Specifically, depositing jet portion 4 includes：Deposition nozzle 41, the jet pipeline connected with deposition nozzle 41, with air jet pipe
The gas puff Z-pinch source of road connection.
More specifically, deposition nozzle 41 at least two, and be arranged in moist closet main body 1.
It should be noted that in the present embodiment, deposition nozzle 41 can be arranged at inner thermal insulating layer 2 and take up an official post according to actual needs
It anticipates appropriate position, deposition nozzle 41 can be in different elevation of waters on inner thermal insulating layer 2, to maintain within the deposition chamber different
The freshness of level locations process gas is overcome in big height scale toroidal workpiece depositing operation, because of top process gas
Freshness difference and the problem of influence processing quality.
, it is necessary to which explanation, in traditional chemical vapor depsotition equipment, deposition nozzle is generally set in the present embodiment four
It puts in the bottom of depositing device, suitable for the not high charcoal-charcoal/charcoal component of height dimension, if depositing charcoal-charcoal/charcoal component of big height size,
The freshness of the region process gas on depositing device top is poor, and the concentration of fresh carbon atom is relatively low, deposition trapping carbon atom
Efficiency can be substantially reduced, in addition, also having substantial amounts of carbon black attachment, severely impact processing quality.
The settling chamber suitable for annular workpieces that the present embodiment four provides is particularly suitable for charcoal-charcoal structure of big height size
Part, in settling chamber provided in this embodiment, the internal deposition nozzle 41 for being provided with multilayer height can keep within the deposition chamber
The freshness of the process gas at different height position, while the attachment of carbon black can be reduced or even avoid, largely improve
The carbon atom adhesive rate that process gas provides, and significantly reduce the energy consumption of equipment.
The embodiment of the present application also provides a kind of chemical gas-phase deposition system, specifically as shown in Figure 5 to Figure 6, including：Power gas
Road system 12, technique air-channel system 7, electric-control system 8, tail gas condensing and tar trap 9, water-cooling system 10, vacuum system 11,
The settling chamber as described above for being suitable for annular workpieces is equipped in furnace body.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (10)
1. a kind of settling chamber suitable for annular workpieces, which is characterized in that including：
Moist closet main body；
Arranged on the in vivo inner thermal insulating layer of moist closet master；
Deposition space is formed between the moist closet main body and the inner thermal insulating layer；
For feeding the deposition jet portion of process gas to the deposition space；
Heating structure between the moist closet main body and the inner thermal insulating layer；
There is the deposition position for placing annular workpieces in the deposition space.
2. the settling chamber according to claim 1 suitable for annular workpieces, which is characterized in that the deposition position is arranged at institute
It states between inner thermal insulating layer and the heating structure.
3. the settling chamber according to claim 1 suitable for annular workpieces, which is characterized in that the deposition position is arranged at institute
It states between heating structure and the moist closet main body.
4. the settling chamber suitable for annular workpieces according to Claims 2 or 3, which is characterized in that the inner thermal insulating layer is
Tube structure, the inner thermal insulating layer bottom are fitted closely with the moist closet main body, the inner thermal insulating layer top and the heat preservation
The space for process gas circulation is formed between the main body of room.
5. the settling chamber suitable for annular workpieces according to Claims 2 or 3, which is characterized in that the deposition jet portion
Arranged on the moist closet bottom part body and it is located at and the corresponding position of the deposition space.
6. the settling chamber according to claim 2 suitable for annular workpieces, which is characterized in that deposition jet portion bag
It includes：Deposition nozzle, the jet pipeline connected with the deposition nozzle, the gas puff Z-pinch source with the jet pipeline connection.
7. the settling chamber according to claim 6 suitable for annular workpieces, which is characterized in that the deposition nozzle is at least
Two, and be arranged on the inner thermal insulating layer.
8. the settling chamber according to claim 3 suitable for annular workpieces, which is characterized in that deposition jet portion bag
It includes：Deposition nozzle, the jet pipeline connected with the deposition nozzle, the gas puff Z-pinch source with the jet pipeline connection.
9. the settling chamber according to claim 8 suitable for annular workpieces, which is characterized in that the deposition nozzle is at least
Two, and be arranged in the moist closet main body.
10. a kind of chemical gas-phase deposition system, including：Furnace body, power air-channel system, technique air-channel system, electric-control system, tail gas
Condensation and tar trap, water-cooling system, vacuum system, which is characterized in that such as claim 1 to 9 times is equipped in the furnace body
The settling chamber suitable for annular workpieces described in meaning one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711309802.0A CN108060409B (en) | 2017-12-11 | 2017-12-11 | Deposition chamber and chemical vapor deposition system suitable for annular workpiece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711309802.0A CN108060409B (en) | 2017-12-11 | 2017-12-11 | Deposition chamber and chemical vapor deposition system suitable for annular workpiece |
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| Publication Number | Publication Date |
|---|---|
| CN108060409A true CN108060409A (en) | 2018-05-22 |
| CN108060409B CN108060409B (en) | 2020-02-21 |
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| CN201711309802.0A Active CN108060409B (en) | 2017-12-11 | 2017-12-11 | Deposition chamber and chemical vapor deposition system suitable for annular workpiece |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59170260A (en) * | 1983-03-17 | 1984-09-26 | Minolta Camera Co Ltd | Capacity coupling type decomposing device |
| US20050053890A1 (en) * | 2003-03-28 | 2005-03-10 | Asahi Glass Company, Limited | Thermal treatment system for semiconductors |
| CN101198719A (en) * | 2005-06-16 | 2008-06-11 | 京瓷株式会社 | Method and device for depositing film, deposited film and photosensitive body employing same |
| CN101268538A (en) * | 2005-08-24 | 2008-09-17 | 肖特股份公司 | Method and device for the plasma treatment of the interior of hollow bodies |
| CN101831623A (en) * | 2010-05-28 | 2010-09-15 | 湖南金博复合材料科技有限公司 | Chemical vapor densification furnace hearth |
| CN203360573U (en) * | 2013-07-22 | 2013-12-25 | 湖南顶立科技有限公司 | Chemical vapor deposition (CVD) system |
| CN104878367A (en) * | 2015-06-07 | 2015-09-02 | 上海华虹宏力半导体制造有限公司 | Reaction cavity and chemical vapor deposition equipment |
-
2017
- 2017-12-11 CN CN201711309802.0A patent/CN108060409B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59170260A (en) * | 1983-03-17 | 1984-09-26 | Minolta Camera Co Ltd | Capacity coupling type decomposing device |
| US20050053890A1 (en) * | 2003-03-28 | 2005-03-10 | Asahi Glass Company, Limited | Thermal treatment system for semiconductors |
| CN101198719A (en) * | 2005-06-16 | 2008-06-11 | 京瓷株式会社 | Method and device for depositing film, deposited film and photosensitive body employing same |
| CN101268538A (en) * | 2005-08-24 | 2008-09-17 | 肖特股份公司 | Method and device for the plasma treatment of the interior of hollow bodies |
| CN101831623A (en) * | 2010-05-28 | 2010-09-15 | 湖南金博复合材料科技有限公司 | Chemical vapor densification furnace hearth |
| CN203360573U (en) * | 2013-07-22 | 2013-12-25 | 湖南顶立科技有限公司 | Chemical vapor deposition (CVD) system |
| CN104878367A (en) * | 2015-06-07 | 2015-09-02 | 上海华虹宏力半导体制造有限公司 | Reaction cavity and chemical vapor deposition equipment |
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| CN108060409B (en) | 2020-02-21 |
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Address after: 410199 No. 1271, liangtang East Road, Xingsha industrial base (Changlong Street), Changsha area, China (Hunan) pilot Free Trade Zone, Changsha, Hunan Province Patentee after: Hunan Dingli Technology Co.,Ltd. Address before: 410199 No. 1271, liangtang East Road, Xingsha industrial base (Changlong Street), Changsha area, China (Hunan) pilot Free Trade Zone, Changsha, Hunan Province Patentee before: ADVANCED CORPORATION FOR MATERIALS & EQUIPMENTS Co.,Ltd. |