CN108103450A - A kind of film deposition apparatus and deposition method - Google Patents
A kind of film deposition apparatus and deposition method Download PDFInfo
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- CN108103450A CN108103450A CN201711458954.7A CN201711458954A CN108103450A CN 108103450 A CN108103450 A CN 108103450A CN 201711458954 A CN201711458954 A CN 201711458954A CN 108103450 A CN108103450 A CN 108103450A
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- heating chamber
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- film deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of film deposition apparatus and deposition method, for deposition film on substrate, the precipitation equipment includes heating the first heating chamber and the second heating chamber of raw material, first heating chamber is equipped with to export first gas derived from the gas after the material gasification in first heating chamber, second heating chamber is equipped with to export the second gas of the gas after the material gasification in second heating chamber everywhere, the first gas outlet and second gas outlet are connected to gas diffusion slit, the outlet of the gas diffusion slit is provided with spray cover board, the spray cover board is towards substrate devices.The device can prepare the uniform film of thin and thick and can realize being uniformly distributed for impurity gas, and in film forming, doped chemical can be evenly distributed.
Description
Technical field
The present invention relates to the preparing technical fields of photoelectric material, and in particular to a kind of film deposition apparatus and deposition method.
Background technology
Transfer efficiency, reliability and the price factor reached from cadmium-Te solar battery considers that it is had become as people's public affairs
It is recognizing and with efficiently, one of film photovoltaic device cheap, development prospect is most wide.
In Cadimium telluride thin film plated film field, close spaced sublimation hair (abbreviation CSS) is a kind of more advanced thin film deposition system
System, the system is fast with film deposition rate, the high advantage of quality of forming film, is especially suitable for forcing down with saturated vapor, easily rise
The substance of China prepares film.Its method characteristic is mainly：Crucible is below glass substrate, by being heated to crucible, crucible
In cadmium telluride distil, steam runs into the relatively low glass substrate of temperature, grows into film.The characteristics of its equipment, is main
It is：Crucible is away from the closer to the distance of glass substrate, generally between 5mm-20mm；It is a kind of Vacuum Heat equipment.CSS deposits cadmium telluride
There are following shortcomings：1st, higher depositing temperature can not be used.Since crucible temperature is higher, and away from glass from substrate distance
It is close, it is affected to substrate temperature, easily forms glass surface upper cold and lower heat, glass deformation.And due to from lower and
On evaporation mode it is less by glass support point, be affected by gravity, glass can also deform seriously.2nd, fragment is difficult.This be by
It is method of evaporating from bottom to top in CSS, when preparing large scale film product there are glass substrate supporting point is less, works as appearance
Glass breaking, it is easy to card, lamination occur；3rd, temperature uniformity is difficult to control.CSS equipment all uses substantially
Rectangle crucible, this crucible easy to manufacture, is easy to feed, and is well suited for the use of large-size pipeline filming equipment.But due to rectangle
Crucible is present in four walls and bottom margin to meet to intermediate cold-zone, this is very unfavorable to evaporation coating.
In addition to CSS equipment, U.S. FirstSolar develops a kind of dress of new vapor transport depositing system (VTD)
Standby and technology of preparing, method characteristic are mainly：Raw material is transported to evaporator crucible by delivering other substances, crucible heating
Raw material is vaporized, and is then sprayed by slit in glass substrate.VTD deposition methods have the following disadvantages：1st, in cadmium telluride
During distillation, extraneous gas is introduced, it is therefore desirable to which very high source temperature just can guarantee that cadmium telluride is in gaseous state；2nd, due to drawing
Enter extraneous gas, therefore the distribution of extraneous gas can have an impact the distribution of cadmium telluride vapour concentration, and then influence film thickness；3rd, by
In the introducing of extraneous gas, source temperature uniformity is difficult to control, and influences the saturated vapour pressure of cadmium telluride.
In addition both deposition methods are single evaporator source depositions, are difficult to realize doping.
The content of the invention
In view of this, the application provides a kind of film deposition apparatus and deposition method, and it is equal which can prepare thin and thick
Even film and it can realize being uniformly distributed for impurity gas, doped chemical can be evenly distributed in film forming.
For solution more than technical problem, technical solution provided by the invention is a kind of film deposition apparatus, in substrate
Upper deposition film, which is characterized in that the precipitation equipment includes heating the first heating chamber and the second heating chamber of raw material, institute
It states the first heating chamber to be equipped with for first gas derived from the gas after the material gasification in first heating chamber to be exported, institute
It states the second heating chamber to be equipped with for second gas derived from the gas after the material gasification in second heating chamber to be exported, institute
It states first gas outlet and second gas outlet and is connected to gas diffusion slit, the outlet of the gas diffusion slit is provided with
Spray cover board, the spray cover board is towards substrate devices.
Preferably, first heating chamber and second heating chamber are externally provided with protective case.
Preferably, the material of the protective case is refractory material, and the bottom of the protective case is provided with to heat substrate
Heating element, the heating element being arranged on protective case can preheat substrate, can reach substrate temperature
550 DEG C, it is more conducive to the deposition of film.
Preferably, the refractory material is graphite or aluminium oxide.
Preferably, first heating chamber and second heating chamber are tubulose crucible, are provided in the tubulose crucible
Filler separates.
Preferably, first heating chamber and second heating chamber are each provided with heating unit.
Wherein the mode of heating of the first heating chamber and the second heating chamber can be itself electrified regulation, can also use resistance
Silk winding heating, inside have filler partition, for cadmium telluride powder to be limited in the isothermal region of heating tube, using tubulose earthenware
Crucible solves the problems, such as crucible heating uniformity, and the raw material powder in heating chamber is enable to be cooled uniformly.
Preferably, the gas diffusion slit is embedded with heating element.
Gas diffusion slit can utilize the waste heat of crucible heating or utilize embedded heating element for keeping
It is passed to the temperature of the feedstock vapor in slit.
Preferably, the spray cover board is made of graphite, and has the function of conductive heater, and surface is cellular, one
Word slit, " it " word slit insert any one referred in slit.
Present invention also provides a kind of method that thin film deposition is carried out using above-mentioned film deposition apparatus, including following step
Suddenly：
(1) film raw material is loaded into first heating chamber and second heating chamber；
(2) film raw material is thermally formed feedstock vapor in the first heating chamber and the second heating chamber, respectively from the first gas
Body exports and second gas outlet is expelled to gas diffusion slit, wherein the gas diffusion slit has been heated to 650 DEG C
More than；
(3) feedstock vapor forms film on substrate after gas diffusion slit by spray cover board, wherein spraying
It applies cover board and has been heated to 670 DEG C, substrate is heated to 550 DEG C.
Preferably, described is that film raw material is that grain size is 200~400 mesh powder particles.
The operation principle for the film deposition apparatus that the application provides is as follows：Raw material powder by outside add in the first heating chamber and
It in second heating chamber, is heated by heating chamber, raw material powder distillation forms hot steam, then by gas vent, enters gas
In body diffusion slit, influenced during this period by heating chamber heating, gas diffusion slit is kept to be in the condition of high temperature.High-temperature steam
It through spray cover board, forms uniform gas and sprays, glass substrate is at the uniform velocity walked below protective case, and feedstock vapor meets low temperature glass
Substrate cooling condensation forms film.
In conclusion the application has the following advantages that compared with prior art：The plated film direction of the application is from up to down
The problems such as progress plated film, glass substrate facilitates support, is not in glass breaking, production efficiency higher；Due at protective case bottom
Portion is provided with heating element and substrate can be heated, and therefore, substrate temperature will not be influenced by the temperature of heating chamber, lining
Bottom temperature can be cooled uniformly to 550 DEG C；The application sets two heating chambers, need not introduce extraneous gas, entire to fill
It puts that interior temperature is easily controllable, makes the thickness of film convenient for control；Can heat raw material powder using the design of tubulose crucible
Intracavitary is cooled uniformly, and is not in the phenomenon that uneven heating is even；In addition, the present invention is defeated using two heating chamber common gas
Wan access can realize being uniformly distributed for impurity gas, and in film forming, doped chemical is evenly distributed, it is easy to realize doping film
Preparation, and the doping film uniform doping prepared.
Description of the drawings
Fig. 1 is the structure diagram of the film deposition apparatus of the present invention；
In figure, 101- protective cases, the second heating chambers of 102-, the outlet of 103- second gas, 104- diffusion slits, 105- sprayings
Cover board, 106- substrates, 107- films, the first heating chambers of 108-, the first heating exits of 109-
Specific embodiment
In order to which those skilled in the art is made to more fully understand technical scheme, with reference to specific embodiment pair
The present invention is described in further detail.
Embodiment 1
A kind of film deposition apparatus, as shown in Figure 1, the device includes heating the first heating chamber 108 and the of raw material
Two heating chambers 102, the first heating chamber 108 are equipped with for by derived from the gas after the material gasification in first heating chamber the
One gas vent 109, the second heating chamber 102 are equipped with for will be derived from the gas after the material gasification in second heating chamber
Second gas outlet 103, first gas outlet and second gas outlet are connected to gas diffusion slit 104, and gas diffusion is narrow
The outlet of seam 104 is provided with spray cover board 105, and spray cover board is towards substrate devices 106.Wherein, the first heating chamber 108 and described
Second heating chamber 102 is externally provided with protective case 101 and is used for the work(for protecting heating chamber that can simultaneously realize heat preservation, the protective case 101
Material is graphite, is provided with to heat the heating element of substrate in the bottom of protective case 101, is arranged at adding for protective case bottom
Thermal element can preheat substrate 106, and the temperature of substrate 106 can be made to reach 550 DEG C, be more conducive to the heavy of film
Product.First heating chamber 108 and second heating chamber 102 are tubulose crucible, be provided in the tubulose crucible filler every
It is disconnected.And first heating chamber 108 and second heating chamber 102 are each provided with heating unit, are added using resistance wire winding
Heat, inside have filler partition, for cadmium telluride powder to be limited in the isothermal region of heating tube, solved using tubulose crucible
The problem of crucible heating uniformity, enables the raw material powder in heating chamber to be cooled uniformly.The gas diffusion slit 104
Heating element is embedded with, gas diffusion slit 104 can utilize the waste heat of crucible heating or utilize embedded heating unit
Part carries out heating for keeping the temperature for the feedstock vapor being passed in slit.The spray cover board 105 is made of graphite, and
There is conductive heater, surface is " it " word slit.
By taking glass substrate size is 60cm × 120cm as an example：The 101 protective case length is 100cm, and material is stone
Ink, liner heat preservation asbestos；108 first heating chambers and 102 second heating chambers embed resistance heating wire for tubular graphene, and length is
110cm, bore 300mm, outer diameter 340mm, heating power 30KW；109 first gas export and 103 second gas go out
Mouthful, Opening length 62cm, width 3cm；104 gas diffusion slits, upper slit width degree be 3cm, vertical lap seam 6cm, slit
Wall is graphite, embeds temperature control heater strip, heating power 10KW.105 spray cover boards, size be long 62cm, width 6cm, slit
In " it ", the wide 0.5cm of slit, cover board being capable of electrified regulation.Entire muff bottom is 10mm away from the distance between 107 substrates.
Embodiment 2
A kind of film deposition apparatus, as shown in Figure 1, the device includes heating the first heating chamber 108 and the of raw material
Two heating chambers 102, the first heating chamber 108 are equipped with for by derived from the gas after the material gasification in first heating chamber the
One gas vent 109, the second heating chamber 102 are equipped with for will be derived from the gas after the material gasification in second heating chamber
Second gas outlet 103, first gas outlet and second gas outlet are connected to gas diffusion slit 104, and gas diffusion is narrow
The outlet of seam 104 is provided with spray cover board 105, and spray cover board is towards substrate devices 106.Wherein, the first heating chamber 108 and described
Second heating chamber 102 is externally provided with protective case 101 and is used for the work(for protecting heating chamber that can simultaneously realize heat preservation, the protective case 101
Material is aluminium oxide, is provided with to heat the heating element of substrate in the bottom of protective case 101, is arranged at protective case bottom
Heating element can preheat substrate 106, and the temperature of substrate 106 can be made to reach 550 DEG C, be more conducive to film
Deposition.First heating chamber 108 and second heating chamber 102 are tubulose crucible, and filler is provided in the tubulose crucible
Partition.And first heating chamber 108 and second heating chamber 102 are each provided with heating unit, are wound using resistance wire
Heating, inside have filler partition, for cadmium telluride powder to be limited in the isothermal region of heating tube, using tubulose crucible solve
The problem of crucible heating uniformity, the raw material powder in heating chamber is set to be cooled uniformly.The gas diffusion slit
104 are embedded with heating element, and it is narrow for keeping being passed to that gas diffusion slit 104 had both carried out heating using embedded heating element
The temperature of feedstock vapor in seam.The spray cover board 105 is made of graphite, and has the function of conductive heater, and surface is
One word slit.
By taking glass substrate size is 60cm × 120cm as an example：The 101 protective case length is 100cm, and material is stone
Ink, liner heat preservation asbestos；108 first heating chambers and 102 second heating chambers embed resistance heating wire for tubular graphene, and length is
110cm, bore 320mm, outer diameter 360mm, heating power 32KW；109 first gas export and 103 second gas go out
Mouthful, Opening length 62cm, width 3cm；104 gas diffusion slits, upper slit width degree be 3cm, vertical lap seam 6cm, slit
Wall is graphite, embeds temperature control heater strip, heating power 10KW.105 spray cover boards, size be long 62cm, width 6cm, slit
For a word slit, the wide 0.5cm of slit, cover board being capable of electrified regulation.Entire muff bottom is away from the distance between 107 substrates
12mm。
Embodiment 3
A kind of Cadimium telluride thin film deposition method, comprises the following steps：
(1) cadmium antimonide powder of 200-400 mesh is loaded into first heating chamber and second heating chamber, by it
It is heated to 680 DEG C；
(2) cadmium antimonide powder is thermally formed cadmium telluride hot steam in the first heating chamber and the second heating chamber, respectively from
First gas exports and second gas outlet is expelled to gas diffusion slit, wherein the gas diffusion slit has been heated to
650 DEG C or more；
(3) cadmium telluride hot steam is 670 DEG C of spraying lid by temperature after 650 DEG C or more of gas diffusion slit
Plate is forming film on 550 degree of glass substrate is preheated to.
Embodiment 4
A kind of doping Cadimium telluride thin film deposition method, specifically includes following steps：
(1) cadmium antimonide powder of 200-400 mesh is loaded into first heating chamber, the first heating chamber is heated to
680 DEG C, the telluride selenium powder of 200-400 mesh is loaded into second heating chamber, is heated to 340 DEG C；
(2) cadmium antimonide powder is thermally formed cadmium telluride hot steam in the first heating chamber, and telluride selenium powder is in the second heating
Intracavitary is thermally formed telluride selenium hot steam, and it is narrow to be expelled to gas diffusion from first gas outlet and second gas outlet respectively
Seam, two kinds of steam are sufficiently mixed in the diffusion slit by being maintained at 650 degree or more；
(3) mixed steam is 670 DEG C of spraying lid by temperature after 650 DEG C or more of gas diffusion slit
Plate is forming doping Cadimium telluride thin film on 550 degree of glass substrate is preheated to.
It the above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
The limitation of the present invention, protection scope of the present invention should be subject to claim limited range.For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change
Protection scope of the present invention is also should be regarded as into retouching.
Claims (10)
1. a kind of film deposition apparatus, for deposition film on substrate, which is characterized in that the precipitation equipment includes adding
The first heating chamber and the second heating chamber of hot charge, first heating chamber are equipped with for by the raw material in first heating chamber
First gas derived from gas after gasification exports, and second heating chamber is equipped with for by the raw material in second heating chamber
Second gas derived from gas after gasification exports, and the first gas outlet and second gas outlet are connected to gas diffusion
Slit, the outlet of the gas diffusion slit are provided with spray cover board, and the spray cover board is towards substrate devices.
2. film deposition apparatus according to claim 1, which is characterized in that first heating chamber and second heating
Chamber is externally provided with protective case.
3. film deposition apparatus according to claim 2, which is characterized in that the material of the protective case is refractory material,
The bottom of the protective case is provided with to heat the heating element of substrate.
4. film deposition apparatus according to claim 3, which is characterized in that the refractory material is graphite or oxidation
Aluminium.
5. film deposition apparatus according to claim 1, which is characterized in that first heating chamber and second heating
Chamber is tubulose crucible, and filler partition is provided in the tubulose crucible.
6. film deposition apparatus according to claim 1, which is characterized in that first heating chamber and second heating
Chamber is each provided with heating unit.
7. film deposition apparatus according to claim 1, which is characterized in that the gas diffusion slit is embedded with heating unit
Part.
8. film deposition apparatus according to claim 1, which is characterized in that the spray cover board is made of graphite, and
There is conductive heater, surface is cellular, a word slit, " it " word slit or inserts any one referred in slit.
9. a kind of method that film deposition apparatus using described in claim 1~8 carries out thin film deposition, which is characterized in that bag
Include following steps：
(1) film raw material is loaded into first heating chamber and second heating chamber, the film raw material is powdered；
(2) film raw material is thermally formed feedstock vapor in the first heating chamber and the second heating chamber, is gone out respectively from first gas
Mouth and second gas outlet are expelled to gas diffusion slit, wherein the gas diffusion slit has been heated to 650 DEG C or more；
(3) feedstock vapor forms film on substrate after gas diffusion slit by spray cover board, wherein spraying lid
Plate has been heated to 670 DEG C, and substrate is heated to 550 DEG C.
10. the method for thin film deposition according to claim 9, which is characterized in that it is described be film raw material be grain size 200~
400 mesh powder particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711458954.7A CN108103450A (en) | 2017-12-28 | 2017-12-28 | A kind of film deposition apparatus and deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711458954.7A CN108103450A (en) | 2017-12-28 | 2017-12-28 | A kind of film deposition apparatus and deposition method |
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| Publication Number | Publication Date |
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| CN108103450A true CN108103450A (en) | 2018-06-01 |
Family
ID=62214188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711458954.7A Pending CN108103450A (en) | 2017-12-28 | 2017-12-28 | A kind of film deposition apparatus and deposition method |
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| CN (1) | CN108103450A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111020492A (en) * | 2019-12-30 | 2020-04-17 | 中国建材国际工程集团有限公司 | Crucible system for close-space sublimation deposition equipment |
| CN111424239A (en) * | 2020-04-14 | 2020-07-17 | 杭州纤纳光电科技有限公司 | Evaporation furnace and double-sided coating device |
| CN111996501A (en) * | 2020-07-27 | 2020-11-27 | 江苏菲沃泰纳米科技有限公司 | Raw material gasification device, coating equipment and gasification method thereof |
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| US20090246940A1 (en) * | 2008-01-15 | 2009-10-01 | First Solar, Inc. | System and method for depositing a material on a substrate |
| KR20110002235A (en) * | 2009-07-01 | 2011-01-07 | 한국과학기술원 | Downward type linear source and device for depositing thin film using the same |
| CN102839352A (en) * | 2011-06-21 | 2012-12-26 | 无锡尚德太阳能电力有限公司 | Film deposition device and method |
| CN103489957A (en) * | 2012-06-15 | 2014-01-01 | 无锡尚德太阳能电力有限公司 | Method and device for preparing cadmium telluride thin film |
| CN103668078A (en) * | 2012-09-17 | 2014-03-26 | 无锡尚德太阳能电力有限公司 | Cadmium telluride thin film deposition equipment and cadmium telluride thin film deposition method for same |
| CN104451552A (en) * | 2014-11-17 | 2015-03-25 | 中建材光电装备（太仓）有限公司 | Method and device for depositing semiconductor film on glass substrate |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090246940A1 (en) * | 2008-01-15 | 2009-10-01 | First Solar, Inc. | System and method for depositing a material on a substrate |
| KR20110002235A (en) * | 2009-07-01 | 2011-01-07 | 한국과학기술원 | Downward type linear source and device for depositing thin film using the same |
| CN102839352A (en) * | 2011-06-21 | 2012-12-26 | 无锡尚德太阳能电力有限公司 | Film deposition device and method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111020492A (en) * | 2019-12-30 | 2020-04-17 | 中国建材国际工程集团有限公司 | Crucible system for close-space sublimation deposition equipment |
| CN111424239A (en) * | 2020-04-14 | 2020-07-17 | 杭州纤纳光电科技有限公司 | Evaporation furnace and double-sided coating device |
| CN111996501A (en) * | 2020-07-27 | 2020-11-27 | 江苏菲沃泰纳米科技有限公司 | Raw material gasification device, coating equipment and gasification method thereof |
| CN111996501B (en) * | 2020-07-27 | 2022-03-04 | 江苏菲沃泰纳米科技股份有限公司 | Raw material gasification device, coating equipment and gasification method thereof |
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Application publication date: 20180601 |