KR20110002235A - Downward type linear source and device for depositing thin film using the same - Google Patents

Abstract

PURPOSE: A downward type linear deposition source and a device for forming a thin film using the same are provided to improve vapor deposition density and efficiency. CONSTITUTION: A downward type linear deposition source(10) comprises a container-shaped crucible(11), an injection pipe(14), a heating unit(18), and a cylindrical nozzle(15). A space is formed inside the crucible. The injection pipe passes through the side of the crucible. The injection pipe supplies the deposition material to the space of the crucible. The heating unit heats the deposition material of the crucible inside. The nozzle discharges the vaporized deposition material downward through the lower part of the crucible. The nozzle is installed inside the space of the crucible.

Description

DOWNWARD TYPE LINEAR SOURCE AND DEVICE FOR DEPOSITING THIN FILM USING THE SAME}

The present invention relates to a top-down linear evaporation source and a thin film forming apparatus using the same, and more particularly, it is possible to improve the deposition efficiency by depositing the vaporized deposition material by spraying the vaporized deposition material on the upper side of the substrate and the configuration of the apparatus. The present invention relates to a top-down linear evaporation source and a thin film forming apparatus using the same.

Conventional vacuum deposition apparatus does not use a nozzle to induce vaporized deposition material in the crucible, the deposition material is radially scattered. Therefore, it is not easy to deposit only at the position to be deposited, the deposition material is attached to the inner wall of the chamber as well as the substrate has a problem that a considerable amount of deposition material is wasted.

In addition, since the heating unit is heated to a temperature higher than the vaporization temperature to heat the deposition material charged in the crucible to the vaporization temperature, a large amount of radiant heat is emitted from the evaporation source, so that the distance between the substrate and the evaporation source is increased to deposit the vaporized material on the substrate. There was a problem that the ratio is even lower.

On the other hand, in order to increase productivity, substrates, especially glass substrates, are being enlarged. However, if a thin film is formed by mounting an evaporation source on the lower side and installing the substrate on the upper side in a conventional manner, the substrate may not only bend downward, In the case of additional coating and processing on the substrate, most of the reaction materials come from the top to the bottom, so the process of overturning the large substrate is required.

In order to overcome the above problems, a top-down evaporation apparatus has been developed, but since the gas phase movement path including the nozzle must be maintained at a high temperature, power consumption is high and the equipment has a problem of being complicated.

An object of the present invention for solving the above problems is to improve the deposition efficiency by spraying the vaporized deposition material down the upper side of the substrate by using a nozzle to improve the deposition efficiency, and to simplify the configuration of the apparatus for a top down linear evaporation source and It is to provide a thin film forming apparatus using the same.

Top-down linear evaporation source and a thin film forming apparatus using the same of the present invention for achieving the above object is a cylindrical crucible having a filling space therein to accommodate the deposition material; A charging pipe installed through the side of the crucible to supply the deposition material into the filling space of the crucible; Heating means for heating the deposited material filled in the crucible; And a nozzle for discharging the vapor deposition material vaporized inside the crucible by the heating means downwardly through the lower portion of the crucible, wherein the nozzle is installed in the filling space of the crucible, and the cross section gradually decreases. A cross-sectional reduction part is installed through the lower part of the crucible.

Here, the crucible is preferably made of carbon or silicon carbide.

In addition, the crucible further includes an outer wall covering the outer peripheral surface, the outer wall is preferably made of a refractory material.

In addition, the heating means comprises a power supply for supplying power to generate heat by the electrical resistance of the crucible itself.

In addition, the heating means is installed in the crucible, it is preferable to further comprise a mesh made of the same material as the crucible.

In addition, it is preferable that the cross section of the nozzle is formed in a “U” or “V” shape, and a discharge port having a slit or a plurality of holes is provided below the nozzle.

In addition, the height of the nozzle in the crucible is preferably at least 1/2 of the maximum height of the filling space of the crucible.

In addition, the charging pipe is preferably made of a ceramic material.

Thin film forming apparatus using a top-down linear evaporation source of the present invention for achieving the above object, the top-down source evaporation source; A deposition material reservoir connected by said charging pipe of said top down source evaporation source; And a gate valve provided in the charging pipe to control a supply amount of the deposition material supplied from the deposit material reservoir to the inner crucible filling space of the downward source evaporation source.

In addition, it is preferable to further comprise a cooling means for cooling the interior of the charging pipe.

The cooling means is preferably configured to include a cooling coil winding the outer peripheral surface of the charging pipe.

In addition, it is preferably configured to further include a gas supply pipe connected to the charging pipe through the gate valve, to supply an inert gas to the inner filling space of the crucible.

According to the above-described top-down linear evaporation source of the present invention and a thin film forming apparatus using the same, the top-down deposition of the vaporized deposition material is sprayed downward, thereby improving the process efficiency compared to the conventional bottom-up deposition. .

In addition, according to the top-down linear evaporation source of the present invention and the thin film forming apparatus using the same, the vapor deposition by having a nozzle for injecting the deposition material on the evaporation source and by forming the outer wall of the refractory material in the crucible, thereby reducing the distance between the substrate and the evaporation source, It has the effect of improving the density and deposition efficiency.

In addition, according to the top-down linear evaporation source of the present invention and the thin film forming apparatus using the same, since most of the nozzles are located inside the crucible, a separate heating means for heating the nozzles is not necessary, so that the size of the equipment is reduced and the power of the process proceeds. It has the effect of reducing the consumption.

In addition, according to the top-down linear evaporation source of the present invention and the thin film forming apparatus using the same, the crucible is formed of carbon and silicon carbide material to self-heat the heat required to vaporize the deposition material by the power supplied through the power supply. This has the effect of making the configuration simpler.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a top down linear evaporation source according to an embodiment of the present invention, Figure 2 is a side view of the top down linear evaporation source of FIG.

Referring to FIGS. 1 and 2, the top-down linear evaporation source 10 (hereinafter referred to as “evaporation source”) of the present embodiment is a crucible 11, a charging tube 14, a heating means 18, and a nozzle 15. It is configured to include).

First, the crucible 11 is formed in a cylindrical shape having a filling space (C) therein to accommodate the deposition material.

In the present embodiment, the crucible 11 exemplarily has a cylindrical shape extending in the horizontal direction. However, the present invention is not necessarily limited thereto, and it is natural that various types of polygonal cylinders may be formed as long as the filling space C may be formed therein.

On the other hand, the crucible 11 is preferably made of carbon or silicon carbide material. As such, since the crucible 11 is made of carbon or silicon carbide, when the power is supplied by a heating means described later without using a separate heating member, heat may be generated by heating the deposition material by its own electrical resistance. .

In addition, the crucible 11 of the present embodiment is configured to further include an outer wall 12 surrounding the outer peripheral surface. The outer wall 12 is formed by coating a refractory material having a low thermal conductivity or surrounding the refractory material on the outer circumferential surface of the crucible.

As such, by forming the outer wall 12 of the refractory material in the crucible 11, it is possible to prevent the heat heated to vaporize the deposition material to be cooled by the outside air.

In addition, when the deposition material is injected downward into the substrate through the nozzle 15, the thermal deformation of the substrate may be prevented, which may occur due to the transfer of radiant heat from the crucible 11 to the substrate, and the gap between the nozzle 15 and the substrate may be minimized. To prevent deposition on unnecessary portions.

On the side of the crucible 11, a plurality of charging holes 13 are formed through the cylindrical direction.

As such, by forming a plurality of charging holes 13 along the length direction of the crucible 11, the filling materials can be uniformly supplied into the filling space (C).

In addition, a charging pipe 14 serving as a passage for supplying a deposition material into the filling space C of the crucible 11 is inserted and fixed in each charging hole 13. Here, the charging pipe 14 is preferably made of a material having a low thermal conductivity, that is, a ceramic material.

The heating means 18 is configured to heat the deposited material filled inside the crucible. In the present embodiment, the heating means 18 exemplifies that the heating means 18 is composed of only a power supply for supplying power to the crucible 11 made of carbon and silicon carbide.

As such, since the crucible 11 is made of carbon or silicon carbide material having high electrical resistance, the crucible is generated by electric resistance heating by itself by power supplied through a power supply without using a separate heating member. 11) It is possible to vaporize the deposited material filled inside.

In addition, it is provided on the inner surface of the crucible 11, and may further include a mesh 19 made of the same carbon and silicon carbide material as the crucible 11.

The mesh 19 allows for more efficient heating of the deposited material charged inside the furnace 11 to the power supplied through the power supply.

In addition, the nozzle 15 is configured to spray the vapor deposition material vaporized inside the crucible 11 by the heating means 18 downward through the lower portion of the crucible 11 above the substrate.

In the present embodiment, the nozzle 15 is installed in the filling space C of the crucible 11, and the lower cross-sectional reduction part 16 whose cross section is gradually reduced is installed through the lower part of the crucible 11. To illustrate.

Here, the cross section of the nozzle 15 may have a “U” or “V” shape in which the cross-sectional area decreases toward the lower portion, and the discharge cross section 17 for injecting the vaporized deposition material into the lower cross-sectional reduction portion 16. ) Is formed.

The outlet 17 may be formed in the form of a slot or a plurality of holes are formed long along the longitudinal direction.

In addition, it is preferable that the height 15 of the nozzle 15 of the nozzle 15 in the crucible 11 is the maximum height H of the filling space of the crucible 11, that is, 1/2 or more of the vertical diameter.

Hereinafter, the thin film forming apparatus 100 using the top-down source evaporation source 10 will be described with reference to FIG. 3.

Figure 3 is a schematic diagram showing a thin film forming apparatus using a top-down linear evaporation source according to an embodiment of the present invention.

Referring to FIG. 3, the thin film forming apparatus 100 (hereinafter, referred to as “thin film forming apparatus”) using the top-down source evaporation source of the present embodiment includes the evaporation source 10, the deposition material reservoir 20, and the gate valve ( 30), the cooling means 40 and the gas supply pipe (50).

In order to increase energy efficiency, the evaporation source 10 needs to reduce the size of the crucible 11 and to minimize the amount of extra deposition material in the crucible as much as the deposition material is required for the immediate deposition.

The deposition material reservoir 20 is formed to continuously supply the deposition material to the filling space C inside the crucible 11 so as to be connected to each other through the charging pipe 14 of the evaporation source.

The gate valve 30 is installed on the charging pipe 14 connecting the deposition material reservoir 20 to control the amount of deposition material supplied from the deposition material reservoir 20 to the crucible 11.

Therefore, the gate valve 30 can supply the required amount of deposition material to the crucible 11 at any time without breaking the atmosphere inside the crucible 11 so that a continuous deposition process can be performed through an evaporation source.

In FIG. 3, the apparatus for creating an atmosphere inside the crucible 11 is illustrated, but at the moment when the deposition material is charged into the crucible 11, the atmosphere inside the deposition material storage 20 is the atmosphere inside the crucible 11. It is desirable to remain the same or similar to.

Cooling means 40 is installed to cool charge tube 14 to prevent heat from being transferred from crucible 11 to gate valve 30 and deposit storage 20 through charge tube 14. In addition, the charging passage inside the charging pipe 14 may be blocked or the gate valve 30 may fail due to melting and deformation of the deposition material.

On the other hand, the cooling means 40 in the present embodiment exemplifies that the cooling coil 41 wrapped around the charging pipe (14).

In addition, the gas supply pipe 50 is connected to the charging pipe 14 through the gate valve 30 to supply an inert gas into the charging pipe 14.

 When vaporized deposition material is introduced from the crucible 11 while the charging pipe 14 is cooled by the cooling means 40, it is deposited inside the charging pipe 14 to block the charging passage. Therefore, the inert gas or the like is blown through the gas supply pipe 50 to prevent the deposition material vaporized from the crucible 11 from flowing into the charging pipe 14 to prevent the charging pipe from being blocked inside.

In addition, by adjusting the pressure of the inert gas flowing through the gas supply pipe 50 to maintain the pressure inside the crucible 11 higher than the external pressure to adjust the amount of the deposition material injected through the nozzle 15. .

On the other hand, the above-described mesh 19 to quickly heat the inert gas flowing through the gas supply pipe 50 as well as the deposition material, it is possible to prevent the temperature inside the crucible is lowered.

As described above, the thin film forming apparatus 100 using the top-down linear evaporation source according to the present embodiment discharges the vaporized deposition material downward from the bottom substrate to be continuously deposited on the substrate surface. In addition, it is possible to configure the equipment of the thin film forming apparatus small and simple, and to reduce the energy consumed during the deposition process to reduce the process cost.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the spirit and scope of the invention. And it goes without saying that they belong to the scope of the present invention.

1 is a front sectional view of a top-down linear evaporation source according to an embodiment of the present invention.

FIG. 2 is a side perspective view of the top down linear evaporation source of FIG. 1. FIG.

3 is a schematic view showing a thin film forming apparatus using a top-down linear evaporation source according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

10: evaporation source 11: crucible

12: outer wall 13: charging

14: charging pipe 15: nozzle

16: lower section reduction 17: outlet

18: heating means (power supply) 20: depositing material reservoir

30: gate valve 40: cooling means

41: cooling coil 50: gas supply pipe

Claims (12)

A cylindrical crucible having a filling space therein to accommodate the deposition material; A charging pipe installed through the side of the crucible to supply the deposition material into the filling space of the crucible; Heating means for heating the deposited material filled in the crucible; And And a nozzle for discharging the vapor deposition material vaporized inside the crucible by the heating means downwardly through the lower portion of the crucible. The nozzle, A top-down source evaporation source installed in the filling space of the crucible and having a lower cross-sectional reduction portion whose cross section is gradually reduced through the lower portion of the crucible. In claim 1, The crucible is Top down source evaporation source made of carbon or silicon carbide. In claim 2, The crucible further includes an outer wall covering the outer circumferential surface, The outer wall is a top-down source evaporation source consisting of a refractory material. In claim 2, The heating means, Top down source evaporation source comprising a power supply for supplying power to generate heat by the electrical resistance of the crucible itself. In claim 2, The heating means, A top down source evaporation source installed inside the crucible and further comprising a mesh made of the same material as the crucible. In claim 1, The cross section of the nozzle is made of a "U" or "V" shape, Downward source evaporation source is provided with a discharge port in the form of a slit or a plurality of holes at the bottom of the lower end of the lower section. In claim 1, The top of the source evaporation source including the nozzle height is at least 1/2 of the maximum height of the filling space of the crucible. In claim 1, The charging pipe is a top-down source evaporation source made of a ceramic material. The top down source evaporation source of claim 1; A deposition material reservoir connected by said charging pipe of said top down source evaporation source; And And a gate valve provided in the charging pipe and configured to control a supply amount of the deposition material supplied from the deposit material reservoir to the inner crucible filling space of the downward source evaporation source. The method of claim 9, Thin film forming apparatus using a top-down source evaporator further comprises a cooling means for cooling the interior of the charging pipe. In claim 10, The cooling means, Thin film forming apparatus using a top-down source evaporation source comprising a cooling coil wound around the outer circumferential surface of the charging pipe. In claim 10, Connected to the charging tube through the gate valve, Thin film forming apparatus using a top-down source evaporation source further comprising a gas supply pipe for supplying an inert gas into the charging pipe.

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