CN109881185A - A kind of vapor deposition reaction device - Google Patents
A kind of vapor deposition reaction device Download PDFInfo
- Publication number
- CN109881185A CN109881185A CN201910168300.3A CN201910168300A CN109881185A CN 109881185 A CN109881185 A CN 109881185A CN 201910168300 A CN201910168300 A CN 201910168300A CN 109881185 A CN109881185 A CN 109881185A
- Authority
- CN
- China
- Prior art keywords
- vacuum
- heating
- exocoel
- vapor deposition
- deposition reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The present invention discloses a kind of vapor deposition reaction device, comprising: vacuum exocoel, vacuum lumen room, heating device heat flow guiding structure, heating source；Wherein, the vacuum exocoel and the vacuum lumen room include the cavity wall for enclosing corresponding chambers, and the vacuum lumen room is set in the chamber of the vacuum exocoel；The heating device is set on the outside of the vacuum lumen chamber wall, and is extended to except vacuum exocoel cavity wall by the heating flow guiding structure, is connected with the heating source；The vacuum exocoel and the vacuum lumen room are provided with the channel connecting with vacuum evacuation device.The vacuum lumen room is set in the chamber of the vacuum exocoel, since heat transfer media being not present in vacuum environment, the introducing of heating device on the outside of vacuum lumen chamber wall can be to avoid the heat loss of vacuum lumen room, to guarantee the constant temperature heat insulating state of PECVD reaction chamber.
Description
Technical field
The present invention relates to vacuum chamber technical fields, and in particular to the vacuum chamber technology of a kind of pair of PECVD coating process
Field.
Background technique
PECVD (Plasma Enhanced Chemical Vapor Deposition) refers to plasma enhanced chemical
Vapour deposition process.Working principle is to make the gas ionization containing thin film composition atom by microwave or radio frequency etc., in partial shape
At plasma, and plasma chemistry activity is very strong, it is easy to react, go out desired film in deposition on substrate.
In the prior art, poor in process for the reaction structure equipment constant temperature sexual deviation of PECVD coating process
Temperature constancy and biggish energy consumption issues and heat-energy losses lead to the duplicate consistency of technique.
Summary of the invention
The present invention provides a kind of vapor deposition reaction device, to solve the above-mentioned problems in the prior art.
The present invention provides a kind of vapor deposition reaction device characterized by comprising vacuum exocoel, vacuum lumen room,
Heating device heats flow guiding structure, heating source；
Wherein, the vacuum exocoel and the vacuum lumen room include the cavity wall for enclosing corresponding chambers, described true
Empty inner cavity chamber is set in the chamber of the vacuum exocoel；
The heating device is set on the outside of the vacuum lumen chamber wall, and is extended to by the heating flow guiding structure
Except vacuum exocoel cavity wall, it is connected with the heating source；
The vacuum exocoel and the vacuum lumen room are provided with the channel connecting with vacuum evacuation device.
Optionally, the vacuum lumen chamber wall is arranged independently of the vacuum exocoel cavity wall, and the heating device is set
Set the outer chamber wall for being coated on the vacuum lumen room.
Optionally, the vacuum lumen room and the vacuum exocoel include common upper cavity wall, the vacuum lumen room
Other cavity walls independently of the vacuum exocoel cavity wall；The heating device setting is coated on the only of the vacuum lumen room
On the outside of vertical cavity wall.
Optionally, the heating device is specially heating tube.
Optionally, the heating tube is hollow pipeline, for passing through fluid heating medium.
Optionally, it is heater strip or heating sheet that the heating device, which is specially heating device,.
Optionally, it is tubulose heater strip that the heating device, which is specially heating device,.
Optionally, the heating flow guiding structure includes heating introducing device, sealing ring and locknut, the heating flow guiding structure
By the heating introducing device, the sealing ring and the locknut collective effect are simultaneously fixed on the vacuum exocoel cavity wall.
Optionally, the heating flow guiding structure acts on the heating device in the vacuum exocoel and the vacuum
Chamber.
It optionally, further include the upper/lower electrode being set in the vacuum lumen room.
Compared with prior art, the invention has the following advantages that
The present invention provides a kind of vapor deposition reaction device characterized by comprising vacuum exocoel, vacuum lumen room,
Heating device heats flow guiding structure, heating source；Wherein, the vacuum exocoel and the vacuum lumen room include enclosing
The cavity wall of corresponding chambers, the vacuum lumen room are set in the chamber of the vacuum exocoel；The heating device is set to
On the outside of the vacuum lumen chamber wall, and extended to except vacuum exocoel cavity wall by the heating flow guiding structure, and it is described
Heating source is connected；The vacuum exocoel and the vacuum lumen room are provided with the channel connecting with vacuum evacuation device.
It follows that the vacuum lumen room is set to the vacuum exocoel in the technical solution that the application proposes
Chamber in, since heat transfer media being not present in vacuum environment, the introducing of the heating device on the outside of vacuum lumen chamber wall
It can be to avoid the heat loss of vacuum lumen room, to guarantee the constant temperature heat insulating state of PECVD reaction chamber.
Detailed description of the invention
Fig. 1 is the schematic diagram of internal structure of vapor deposition reaction device provided by the embodiments of the present application, wherein the vacuum
Inner cavity chamber's cavity wall is arranged independently of the vacuum exocoel cavity wall, and the heating device setting is coated on the vacuum lumen room
Outer chamber wall.
Fig. 2 is the schematic diagram of internal structure of vapor deposition reaction device provided by the embodiments of the present application, wherein the vacuum
Inner cavity chamber and the vacuum exocoel include common upper cavity wall, and other cavity walls of the vacuum lumen room are independently of the vacuum
The cavity wall of exocoel；The heating device setting is coated on the outside of the independent cavity wall of the vacuum lumen room.
Specific embodiment
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention.But the present invention can be with
Much it is different from other way described herein to implement, those skilled in the art can be without prejudice to intension of the present invention the case where
Under do similar popularization, therefore the present invention is not limited to the specific embodiments disclosed below.
The present invention discloses a kind of vapor deposition reaction device, and the vacuum lumen room is set to the chamber of the vacuum exocoel
Interior, since heat transfer media being not present in vacuum environment, the introducing of the heating device on the outside of vacuum lumen chamber wall can be with
The heat loss of vacuum lumen room is avoided, to guarantee the constant temperature heat insulating state of PECVD reaction chamber.
Vapor deposition reaction device provided by the present application is described in detail and is said below by way of specific embodiment
It is bright.
Fig. 1 is the schematic diagram of internal structure of vapor deposition reaction device provided by the embodiments of the present application, wherein the vacuum
Inner cavity chamber's cavity wall is arranged independently of the vacuum exocoel cavity wall, and the heating device setting is coated on the vacuum lumen room
Outer chamber wall.Fig. 2 is the schematic diagram of internal structure of vapor deposition reaction device provided by the embodiments of the present application, wherein the vacuum
Inner cavity chamber and the vacuum exocoel include common upper cavity wall, and other cavity walls of the vacuum lumen room are independently of the vacuum
The cavity wall of exocoel；The heating device setting is coated on the outside of the independent cavity wall of the vacuum lumen room.
The present invention provides a kind of vapor deposition reaction device, which includes: vacuum exocoel 001,
Vacuum lumen room 002, heating device 003 heat flow guiding structure 004, heating source 005.
It describes in detail below to the vacuum chamber structure of the application.In the embodiment of the present application, vacuum exocoel 001 and
Vacuum lumen room 002 includes the cavity wall for enclosing corresponding chambers, and the vacuum lumen room 002 is set to the vacuum exocoel
In 001 chamber；Wherein, the vacuum lumen chamber wall is arranged independently of the vacuum exocoel cavity wall, as shown in Figure 1, institute
It states heating device 003 and the outer chamber wall for being coated on the vacuum lumen room 002 is set.In addition, the vacuum lumen room 002 and described
Vacuum exocoel 001 can also include common upper cavity wall, and other cavity walls of the vacuum lumen room 002 are independently of the vacuum
The cavity wall of exocoel 001, as shown in Fig. 2, the separate chamber for being coated on the vacuum lumen room 002 is arranged in the heating device 003
On the outside of wall.
It is the introduction and explanation to the vacuum chamber structure above, because the vacuum lumen room 002 is above-mentioned true
Constant temperature heat insulating environment is provided by the heating device in Altitude.The heating device 003 is introduced and is illustrated below.Institute
It states heating device 003 to be set on the outside of the vacuum lumen chamber wall, wherein the heating device 003 is specially heating tube, institute
Stating heating tube is hollow pipeline, for passing through fluid heating medium；In addition, the heating device 003 can also be heating device
For heater strip or heating sheet；Furthermore the heating device 003 can also be that heating device is tubulose heater strip.In the vacuum
It further include upper/lower electrode 006 in chamber.
Since the heating device 003 is set on the outside of the vacuum lumen chamber wall, and pass through heating drainage knot
Structure 004 extends to except vacuum exocoel cavity wall, is connected with the heating source 005.Below to the heating flow guiding structure 004
It is introduced and illustrates.The heating flow guiding structure 004 includes heating introducing device 004-1, sealing ring 004-2 and locknut 004-
3, the heating flow guiding structure 004 passes through the heating introducing device 004-1, the sealing ring 004-2 and the locknut 004-3
Collective effect is simultaneously fixed on the vacuum exocoel cavity wall.The heating source 005 is acted on institute by the heating flow guiding structure 004
State vacuum exocoel 001 and the vacuum lumen room 002.
Vapor deposition reaction device provided by the present application can be applied in PECVD coating process.Under normal circumstances, it is applicable in
Vacuum constant temperature adiabatic condition is needed in the reaction chamber of PECVD coating process.However, in the prior art, being used for PECVD plated film work
The reaction structure equipment constant temperature sexual deviation of skill, poor temperature constancy and biggish energy consumption issues and thermal energy damage in process
Mistake leads to the duplicate consistency of technique.By 002 structure of vacuum exocoel 001 and vacuum lumen room in the present embodiment, by vacuum
Inner cavity chamber 002 is set in vacuum exocoel 001, while vacuum exocoel 001 and vacuum lumen room 002 are provided with and vacuumize
The channel of device connection, it is ensured that PECVD reaction chamber keeps vacuum state.Heating device 003 is coated on vacuum lumen simultaneously
The outer chamber wall of room 002, the heating device since heat transfer media being not present in vacuum environment, on the outside of vacuum lumen chamber wall
003 introducing can be to avoid the heat loss of vacuum lumen room 002, to guarantee the constant temperature heat insulating state of PECVD reaction chamber.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this field skill
Art personnel without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore guarantor of the invention
Shield range should be subject to the range that the claims in the present invention are defined.
Claims (10)
1. a kind of vapor deposition reaction device characterized by comprising vacuum exocoel, vacuum lumen room, heating device add
Hot flow guiding structure, heating source；
Wherein, the vacuum exocoel and the vacuum lumen room include the cavity wall for enclosing corresponding chambers, in the vacuum
Chamber is set in the chamber of the vacuum exocoel；
The heating device is set on the outside of the vacuum lumen chamber wall, and extends to vacuum by the heating flow guiding structure
Except exocoel cavity wall, it is connected with the heating source；
The vacuum exocoel and the vacuum lumen room are provided with the channel connecting with vacuum evacuation device.
2. vapor deposition reaction device according to claim 1, which is characterized in that the vacuum lumen chamber wall independently of
The vacuum exocoel cavity wall setting, the heating device setting are coated on the outer chamber wall of the vacuum lumen room.
3. vapor deposition reaction device according to claim 1, which is characterized in that the vacuum lumen room and the vacuum
Exocoel includes common upper cavity wall, the cavity wall of other cavity walls of the vacuum lumen room independently of the vacuum exocoel；Institute
Heating device setting is stated to be coated on the outside of the independent cavity wall of the vacuum lumen room.
4. vapor deposition reaction device according to any one of claims 1 to 3, which is characterized in that the heating device is specific
For heating tube.
5. vapor deposition reaction device according to claim 4, which is characterized in that the heating tube is hollow pipeline, is used
In passing through fluid heating medium.
6. vapor deposition reaction device according to any one of claims 1 to 3, which is characterized in that the heating device is specific
It is heater strip or heating sheet for heating device.
7. vapor deposition reaction device according to any one of claims 1 to 3, which is characterized in that the heating device is specific
It is tubulose heater strip for heating device.
8. vapor deposition reaction device according to any one of claims 1 to 3, which is characterized in that the heating flow guiding structure
Pass through the heating introducing device, the sealing ring including heating introducing device, sealing ring and locknut, the heating flow guiding structure
With the locknut collective effect and be fixed on the vacuum exocoel cavity wall.
9. vapor deposition reaction device according to claim 1, which is characterized in that the heating flow guiding structure described will add
Source is in the vacuum exocoel and the vacuum lumen room.
10. vapor deposition reaction device according to claim 1, which is characterized in that further include being set in the vacuum
Upper/lower electrode in chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910168300.3A CN109881185A (en) | 2019-03-06 | 2019-03-06 | A kind of vapor deposition reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910168300.3A CN109881185A (en) | 2019-03-06 | 2019-03-06 | A kind of vapor deposition reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109881185A true CN109881185A (en) | 2019-06-14 |
Family
ID=66930959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910168300.3A Pending CN109881185A (en) | 2019-03-06 | 2019-03-06 | A kind of vapor deposition reaction device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109881185A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273586A (en) * | 1991-02-18 | 1993-12-28 | Samsung Electronics, Co., Ltd. | Low pressure chemical vapor deposition apparatus, with removal system for remaining ionized gas components |
| CN1263953A (en) * | 1999-12-29 | 2000-08-23 | 西安交通大学 | Industrial pulse or DC plasma and chemical gas-phase deposition equipment for strenthening surface of tool or mould |
| CN101390195A (en) * | 2006-02-20 | 2009-03-18 | 东京毅力科创株式会社 | Heat treatment equipment, heater and its manufacturing method |
| KR20090029575A (en) * | 2007-09-18 | 2009-03-23 | 세메스 주식회사 | Apparatus for vapor deposition of thin film |
| JP2010045195A (en) * | 2008-08-13 | 2010-02-25 | Covalent Materials Corp | Thermal treatment equipment |
| CN102653883A (en) * | 2011-02-28 | 2012-09-05 | 株式会社日立国际电气 | Substrate processing apparatus, and method of manufacturing substrate |
| CN203002359U (en) * | 2012-11-15 | 2013-06-19 | 上海交通大学 | Vacuum device for cleaning and modifying surface by using chemical vapor phase and ultraviolet light chemical dry method |
| CN104233460A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and MOCVD equipment provided with reaction chamber |
| CN104878367A (en) * | 2015-06-07 | 2015-09-02 | 上海华虹宏力半导体制造有限公司 | Reaction cavity and chemical vapor deposition equipment |
-
2019
- 2019-03-06 CN CN201910168300.3A patent/CN109881185A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273586A (en) * | 1991-02-18 | 1993-12-28 | Samsung Electronics, Co., Ltd. | Low pressure chemical vapor deposition apparatus, with removal system for remaining ionized gas components |
| CN1263953A (en) * | 1999-12-29 | 2000-08-23 | 西安交通大学 | Industrial pulse or DC plasma and chemical gas-phase deposition equipment for strenthening surface of tool or mould |
| CN101390195A (en) * | 2006-02-20 | 2009-03-18 | 东京毅力科创株式会社 | Heat treatment equipment, heater and its manufacturing method |
| KR20090029575A (en) * | 2007-09-18 | 2009-03-23 | 세메스 주식회사 | Apparatus for vapor deposition of thin film |
| JP2010045195A (en) * | 2008-08-13 | 2010-02-25 | Covalent Materials Corp | Thermal treatment equipment |
| CN102653883A (en) * | 2011-02-28 | 2012-09-05 | 株式会社日立国际电气 | Substrate processing apparatus, and method of manufacturing substrate |
| CN203002359U (en) * | 2012-11-15 | 2013-06-19 | 上海交通大学 | Vacuum device for cleaning and modifying surface by using chemical vapor phase and ultraviolet light chemical dry method |
| CN104233460A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and MOCVD equipment provided with reaction chamber |
| CN104878367A (en) * | 2015-06-07 | 2015-09-02 | 上海华虹宏力半导体制造有限公司 | Reaction cavity and chemical vapor deposition equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109338333A (en) | A kind of tubular type LPCVD vacuum reaction chamber | |
| GB1116073A (en) | Method of separating glass frit sealed glass parts | |
| CN206783318U (en) | A kind of equipment that can be continuously produced graphene heat conduction film | |
| CN105734524B (en) | Metallo-Organic Chemical Vapor precipitation equipment and the method for using the device | |
| CN109881185A (en) | A kind of vapor deposition reaction device | |
| CN205954105U (en) | Heater chemical vapor deposition device at work piece hole deposit diamond films | |
| JP2017087188A (en) | Vacuum treatment device | |
| CN106756884A (en) | A kind of PECVD coating apparatus | |
| CN108588684A (en) | Increase the PECVD reacting furnaces and its control method of heat source in a kind of stove newly | |
| CN209819883U (en) | High-purity nitrogen heater for wafer drying process | |
| CN107058977A (en) | A kind of PECVD film plating process and device | |
| CN101902872A (en) | Large-area flat-plate normal-pressure radio-frequency cold plasma system | |
| CN113186515A (en) | Process pipeline heating device | |
| CN105088194B (en) | A kind of chemical vapor depsotition equipment of microwave heating | |
| CN209456565U (en) | A kind of vacuum chamber bleeding point heating device | |
| CN107021480B (en) | A kind of reactor preparing diamond for deposition | |
| CN209261756U (en) | A kind of cold pump installation of high vacuum | |
| CN208517494U (en) | A kind of multi-stage evaporator for alkali metal purification | |
| MX2021006363A (en) | Apparatuses and methods for heating and cooling glass tubing. | |
| CN208776835U (en) | A kind of industrialization chemical vapor deposition unit | |
| CN205726461U (en) | A kind of buckle-type heater for the heating of semiconductor vacuum pipeline | |
| CN211502719U (en) | Ethylene glycol replacement energy-saving device | |
| CN103628047A (en) | Device for preparing SiNx dielectric film by chemical vapor deposition | |
| CN114460986B (en) | Device for controlling atomic vapor pressure | |
| CN203639552U (en) | Microwave excited plasma enhanced chemical vapor deposition device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190614 |