KR20090029575A - Apparatus for vapor deposition of thin film - Google Patents

Apparatus for vapor deposition of thin film Download PDF

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KR20090029575A
KR20090029575A KR1020070094925A KR20070094925A KR20090029575A KR 20090029575 A KR20090029575 A KR 20090029575A KR 1020070094925 A KR1020070094925 A KR 1020070094925A KR 20070094925 A KR20070094925 A KR 20070094925A KR 20090029575 A KR20090029575 A KR 20090029575A
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deposition
thin film
heat
vessel
chamber
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KR1020070094925A
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KR100922005B1 (en
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장정원
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세메스 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An apparatus for vapor deposition of thin film is provided to prevent the generation of particles in a vacuum chamber by controlling the evaporation degree of the deposition material from a deposition chamber. An apparatus for depositing a thin film comprises a deposition chamber(20), a heating source(30), and an evaporation protection unit(40). The deposition chamber is positioned within a vacuum chamber(10). The deposition chamber has an opening in order to face a substrate. The deposition chamber accommodates the deposition material. A heating source is positioned at the neighboring of the deposition chamber and heats the deposition chamber.

Description

박막 증착 장치{Apparatus for vapor deposition of thin film}Thin film deposition apparatus {Apparatus for vapor deposition of thin film}

본 발명은 박막 증착 장치에 관한 것으로, 보다 상세하게는 열을 이용하여 증착물질을 기화시켜 기판에 박막을 증착시키는 박막 증착 장치에 관한 것이다.The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus for depositing a thin film on a substrate by vaporizing the deposition material using heat.

일반적으로, 반도체 소자는 진공 상태에서 증착을 이용하여 기판 상에 셰도우 마스크(shadow mask) 등을 통한 소정의 박막 패턴을 형성하는 진공 증착 공정을 수행하게 된다.In general, a semiconductor device performs a vacuum deposition process of forming a predetermined thin film pattern through a shadow mask or the like on a substrate using deposition in a vacuum state.

도 1은 종래의 박막 증착 장치의 구성을 도시한 개략도이다.1 is a schematic diagram showing the configuration of a conventional thin film deposition apparatus.

도 1에 도시된 바와 같이, 종래의 박막 증착 장치는 진공 챔버(10)와, 상면이 개방되고 내부에 증착물질(미도시)을 수용하는 증착용기(20)와, 증착용기(20)를 가열하도록 열을 공급하는 열원(30) 등을 구비한다. 미설명된 도면부호 '31'은 열원(30)의 열이 챔버(10) 공간으로 전달되지 않도록 열원(30)의 외부를 감싸는 형상의 단열부재이다.As shown in FIG. 1, a conventional thin film deposition apparatus includes a vacuum chamber 10, a deposition vessel 20 having an upper surface open therein, and depositing a deposition material (not shown) therein, and heating the deposition vessel 20. And a heat source 30 for supplying heat so as to provide heat. Unexplained reference numeral '31' is a heat insulating member surrounding the outside of the heat source 30 so that heat of the heat source 30 is not transferred to the chamber 10 space.

상기와 같은 구성을 갖는 종래의 박막 증착 장치는 증착 공정시 증착용기(20) 내의 증착물질이 열원(30)에 의해 가열되어 기화되고 증착용기(20)의 개방면(20a)을 통해 증발되어 기판(미도시)에 증착됨으로써 기판에 소정의 박막을 증착 하게 된다.In the conventional thin film deposition apparatus having the above configuration, the deposition material in the deposition container 20 is heated and vaporized by the heat source 30 during the deposition process, and the substrate is evaporated through the open surface 20a of the deposition container 20. By depositing (not shown), a predetermined thin film is deposited on the substrate.

그러나, 증착 이외의 시간, 예를 들어 기판을 증착 장치에 반입 또는 반출시키는 시간, 기판을 마스크와 정렬시키는 시간, 대기 시간 등에도 증착용기(20)의 개방면(20a)을 통해 증착물질이 계속 기화되므로 증착물질의 소모량이 증가하는 문제가 있다. 또한, 이렇게 소모되는 증착물질은 챔버(10) 내에서 파티클(particle) 발생의 요인이 되는 문제가 있다.However, the deposition material continues through the open surface 20a of the deposition vessel 20 even at a time other than deposition, for example, to bring the substrate into or out of the deposition apparatus, to align the substrate with the mask, and to wait. There is a problem that the consumption of the deposition material increases because it is vaporized. In addition, the deposited material consumed in this way has a problem of causing particles in the chamber 10.

본 발명은 상기와 같은 점을 해결하기 위하여 안출된 것으로서, 증착 이외의 시간에는 증착물질이 기화되는 것을 방지함으로써, 증착물질의 소모량을 줄이며, 챔버 내에서 파티클 발생을 감소시킬 수 있는 박막 증착 장치를 제공하는데 그 목적이 있다.The present invention has been made to solve the above-described problems, by preventing vaporization of the deposition material at a time other than deposition, to reduce the consumption of the deposition material, and to reduce the particle generation in the chamber to provide a thin film deposition apparatus The purpose is to provide.

본 발명의 목적들은 이상에서 언급한 목적들로 제한되지 않으며, 언급되지 않은 또 다른 목적들은 아래의 기재로부터 당업자에게 명확하게 이해되어질 수 있을 것이다.The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

상기 목적을 달성하기 위하여, 본 발명의 일 실시예에 따른 박막 증착 장치는, 열을 이용하여 증착물질을 기화시켜 기판에 박막을 증착시키는 박막 증착 장치에 있어서, 상면이 개방되고, 내부에 상기 증착물질을 수용하는 증착용기, 상기 증착용기를 가열하도록 열을 공급하는 열원, 및 증착 이외의 시간에는 상기 증착물질의 기화를 방지하는 기화방지유닛을 포함한다.In order to achieve the above object, the thin film deposition apparatus according to an embodiment of the present invention, in the thin film deposition apparatus for depositing a thin film on the substrate by vaporizing the deposition material using heat, the upper surface is open, the deposition inside And a vaporization prevention unit for preventing vaporization of the vapor deposition material at a time other than vapor deposition, and a vapor deposition container accommodating a material, a heat source for supplying heat to heat the vapor deposition container.

기타 실시예들의 구체적인 사항들은 상세한 설명 및 도면들에 포함되어 있다.Specific details of other embodiments are included in the detailed description and the drawings.

상기한 바와 같은 본 발명의 박막 증착 장치에 따르면 다음과 같은 효과가 하나 혹은 그 이상 있다.According to the thin film deposition apparatus of the present invention as described above has one or more of the following effects.

첫째, 증착 이외의 시간에는 증착물질이 기화되는 것을 방지함으로써, 증착물질의 소모량을 줄일 수 있다. First, it is possible to reduce the consumption of the deposition material by preventing vaporization of the deposition material at a time other than deposition.

둘째, 증착물질의 소모량을 줄임으로써, 챔버 내에서 파티클 발생을 감소시킬 수 있다.Second, by reducing the consumption of the deposition material it is possible to reduce the particle generation in the chamber.

본 발명의 효과들은 이상에서 언급한 효과들로 제한되지 않으며, 언급되지 않은 또 다른 효과들은 청구범위의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성요소를 지칭한다Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 따른 박막 증착 장치를 상세히 설명하기로 한다. 참고로 본 발명을 설명함에 있어서 관련된 공지 기능 혹은 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그 상세한 설명을 생략한다.Hereinafter, a thin film deposition apparatus according to a preferred embodiment of the present invention with reference to the accompanying drawings will be described in detail. For reference, in the following description of the present invention, if it is determined that a detailed description of related known functions or configurations may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

도 2는 본 발명의 일 실시예에 따른 박막 증착 장치의 구성을 도시한 개략도 이다.2 is a schematic diagram showing the configuration of a thin film deposition apparatus according to an embodiment of the present invention.

도 2에 도시된 바와 같이, 본 발명의 일 실시예에 따른 박막 증착 장치는 챔버(10), 증착용기(20), 열원(30) 및 기화방지유닛(40) 등을 구비한다.As shown in FIG. 2, the thin film deposition apparatus according to the exemplary embodiment includes a chamber 10, a deposition container 20, a heat source 30, and a vaporization prevention unit 40.

상기 챔버(10)는 열을 이용하여 증착물질(미도시)을 기화시켜 기판(미도시)에 박막을 증착시키는 박막 증착 공정을 수행하기 위한 진공 상태의 밀폐 공간을 제공한다.The chamber 10 provides a vacuum sealed space for performing a thin film deposition process of vaporizing a deposition material (not shown) using heat to deposit a thin film on a substrate (not shown).

상기 증착용기(20)는 챔버(10)의 내부에 구비되며, 상면이 개방된 도가니 형상을 갖는다. 증착용기(20)는 내부에 유기물질의 증착물질을 수용한다. 이 증착물질은 증착 공정시 열에 의해 기화되어 기판에 증착됨으로써 소정의 박막을 형성한다.The deposition container 20 is provided inside the chamber 10 and has a crucible shape with an open top surface. The deposition container 20 accommodates a deposition material of an organic material therein. The deposition material is vaporized by heat during the deposition process and deposited on the substrate to form a predetermined thin film.

상기 열원(30)은 증착용기(20)를 가열하도록 열을 공급하는 역할을 한다. 본 실시예에서 열원(30)은 증착용기(20)의 외주면에 적어도 하나 이상 구비된 히터를 예시하였으나, 이에 국한되지 않고 그 밖의 다양한 실시 형태가 가능하다. 여기서, 열원(30)의 열이 챔버(10) 공간으로 전달되지 않도록 열원(30)의 외부를 감싸는 형상의 단열부재(31)가 구비되는 것이 바람직하다.The heat source 30 serves to supply heat to heat the deposition vessel 20. In the present embodiment, the heat source 30 exemplifies at least one heater provided on the outer circumferential surface of the deposition container 20, but various other embodiments are possible. Here, it is preferable that the heat insulating member 31 is formed to surround the outside of the heat source 30 so that heat of the heat source 30 is not transferred to the chamber 10 space.

상기 기화방지유닛(40)은 증착 이외의 시간, 예를 들어 기판을 증착 장치에 반입 또는 반출시키는 시간, 기판을 마스크와 정렬시키는 시간, 대기 시간 등에는 상기 증착물질의 기화를 방지하는 역할을 한다. 기화방지유닛(40)은 차폐부재(41) 및 가압부(42) 등을 구비한다.The vaporization prevention unit 40 serves to prevent vaporization of the deposition material during a time other than deposition, for example, a time of bringing or carrying a substrate into a deposition apparatus, a time of aligning the substrate with a mask, and a waiting time. . The vaporization prevention unit 40 is provided with a shield member 41, the pressing portion 42 and the like.

상기 차폐부재(41)는 증착 이외의 시간에 증착용기(20)의 상부 개방면(20a) 을 차폐시키도록 소정의 수평 면적으로 이루어진 덮개 형상을 갖는다. 본 실시예에서 차폐부재(41)는 챔버(10) 내에서 이동장치(미도시)에 의해 상하방향으로 이동되어 증착용기(20)의 상부 개방면(20a)을 차폐하는 구성을 예시하였으나, 차폐부재(41)가 좌우방향으로 이동되는 구성도 가능하다. 차폐부재(41)와 증착용기(20) 및/또는 단열부재(31) 사이에는 실링부재(33), 예컨대 O-Ring이 구비되어 증착물질의 기화를 차단하도록 완전히 밀폐한다.The shielding member 41 has a cover shape made of a predetermined horizontal area to shield the upper opening surface 20a of the deposition container 20 at a time other than deposition. In the present embodiment, the shield member 41 is moved up and down by a moving device (not shown) in the chamber 10 to exemplify a configuration of shielding the upper opening surface 20a of the deposition container 20, but shielding A configuration in which the member 41 is moved in the left and right directions is also possible. Between the shielding member 41 and the deposition vessel 20 and / or the heat insulating member 31 is provided with a sealing member 33, for example O-ring is completely sealed to block the vaporization of the deposition material.

상기 가압부(42)는 차폐부재(41)에 의해 증착용기(20)가 밀폐된 상태에서 증착용기(20) 내의 상부에 압력을 가하는 역할을 한다. 가압부(42)는 차폐부재(41)의 상부에 연결되는 적어도 하나 이상의 배관(43)과, 배관(43)을 통해 증착용기(20)에 소정의 가압 가스를 공급하는 가스 공급원(44) 등을 구비한다. 여기서, 가압 가스는 불활성 계열의 가스를 사용하며, 바람직하게는 N2 가스를 사용한다. 배관(43) 상에는 가압 가스의 공급을 온/오프하는 밸브(45)가 구비된다.The pressing unit 42 serves to apply pressure to the upper portion of the deposition vessel 20 in a state where the deposition vessel 20 is sealed by the shielding member 41. The pressurizing portion 42 includes at least one or more pipes 43 connected to the upper portion of the shielding member 41, and a gas supply source 44 for supplying a predetermined pressurized gas to the deposition container 20 through the pipes 43. It is provided. Here, the pressurized gas is an inert gas, preferably N 2 Use gas. On the pipe 43, a valve 45 for turning on / off the supply of pressurized gas is provided.

상기와 같이 구성된 본 발명의 일 실시예에 따른 박막 증착 장치는, 열을 이용하여 증착용기(20) 내의 증착물질을 기화시켜 증착용기(20)의 상부에 위치하는 기판에 소정의 박막을 증착시킨다. The thin film deposition apparatus according to an embodiment of the present invention configured as described above, vaporizes a deposition material in the deposition vessel 20 using heat to deposit a predetermined thin film on a substrate positioned on the deposition vessel 20. .

보다 상세하게는, 증착 공정을 수행하는 시간에는 차폐부재(41)가 상부로 이동하여 증착용기(20)의 상부를 개방한다. 증착용기(20)의 상부가 개방된 상태에서는 증착용기(20) 내의 증착물질이 열원(30)에 의해 가열되어 기화되고 증착용기(20)의 개방면(20a)을 통해 증발되어 기판에 증착됨으로써 기판에 소정의 박막을 증착하게 된다.More specifically, at the time of performing the deposition process, the shielding member 41 moves upward to open the upper portion of the deposition container 20. In the state where the upper portion of the deposition vessel 20 is opened, the deposition material in the deposition vessel 20 is heated and vaporized by the heat source 30, and evaporated through the open surface 20a of the deposition vessel 20 to be deposited on the substrate. A predetermined thin film is deposited on the substrate.

그리고, 증착 이외의 시간, 예를 들어 기판을 증착 장치에 반입 또는 반출시키는 시간, 기판을 마스크와 정렬시키는 시간, 대기 시간 등에는 증착물질의 기화가 발생할 필요가 없으므로 차폐부재(41)를 하부로 이동시켜 증착용기(20)의 상부 개방면(20a)을 차폐한다. 또한, 차폐부재(41)에 의해 증착용기(20)가 밀폐된 상태에서 증착용기(20) 내의 상부에 배관(43)을 통해 N2 등 불활성 가스를 공급하여 승압시킨다. 따라서, 증착 이외의 시간에는 증착물질이 기화되는 것을 방지함으로써, 증착물질의 소모량을 줄일 수 있다. 또는 증착물질의 소모량을 줄임으로써 챔버(10) 내에서 파티클(particle) 발생을 감소시킬 수 있다.In addition, the evaporation of the deposition material does not need to occur during a time other than deposition, for example, a time of bringing or unloading a substrate into the deposition apparatus, a time of aligning the substrate with a mask, and a waiting time, so that the shielding member 41 is lowered. It moves to shield the upper open surface 20a of the deposition container 20. In addition, the deposition container 20 is sealed by the shielding member 41 and the N 2 through the pipe 43 in the upper portion in the deposition container 20. The inert gas is supplied to boost the pressure. Therefore, by preventing evaporation of the deposition material at a time other than deposition, the consumption amount of the deposition material can be reduced. Alternatively, particle generation in the chamber 10 may be reduced by reducing the consumption of deposition material.

이상 첨부된 도면을 참조하여 본 발명의 실시예를 설명하였지만, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자는 본 발명이 그 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

도 1은 종래의 박막 증착 장치의 구성을 도시한 개략도.1 is a schematic view showing the configuration of a conventional thin film deposition apparatus.

도 2는 본 발명의 일 실시예에 따른 박막 증착 장치의 구성을 도시한 개략도.Figure 2 is a schematic diagram showing the configuration of a thin film deposition apparatus according to an embodiment of the present invention.

< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>

10 : 챔버 20 : 증착용기 10 chamber 20 deposition chamber

30 : 열원 31 : 단열부재 30: heat source 31: heat insulating member

33 : 실링부재 40 : 기화방지유닛 33: sealing member 40: vaporization prevention unit

41 : 차폐부재 42 : 가압부 41: shield member 42: pressurizing portion

43 : 배관 44 : 가스 공급원 43: pipe 44: gas supply source

45 : 밸브45: valve

Claims (5)

열을 이용하여 증착물질을 기화시켜 기판에 박막을 증착시키는 박막 증착 장치에 있어서,A thin film deposition apparatus for depositing a thin film on a substrate by vaporizing a deposition material using heat, 상면이 개방되고, 내부에 상기 증착물질을 수용하는 증착용기;A deposition container having an upper surface open and accommodating the deposition material therein; 상기 증착용기를 가열하도록 열을 공급하는 열원; 및A heat source supplying heat to heat the deposition vessel; And 증착 이외의 시간에는 상기 증착물질의 기화를 방지하는 기화방지유닛을 포함하는 박막 증착 장치.Thin film deposition apparatus comprising a vaporization prevention unit for preventing the vaporization of the deposition material at a time other than deposition. 제 1 항에 있어서, 상기 기화방지유닛은,According to claim 1, wherein the vaporization prevention unit, 증착 이외의 시간에 상기 증착용기의 상부 개방면을 차폐시키는 차폐부재; 및A shielding member for shielding the upper open surface of the deposition vessel at a time other than deposition; And 상기 차폐부재에 의해 상기 증착용기가 밀폐된 상태에서 상기 증착용기 내의 상부에 압력을 가하는 가압부를 포함하는 박막 증착 장치.And a pressurizing part configured to apply pressure to an upper portion of the deposition container while the deposition container is sealed by the shielding member. 제 2 항에 있어서, 상기 가압부는,The method of claim 2, wherein the pressing unit, 상기 차폐부재에 연결되는 적어도 하나 이상의 배관; 및At least one pipe connected to the shielding member; And 상기 배관을 통해 상기 증착용기에 소정의 가압 가스를 공급하는 가스 공급원을 포함하는 박막 증착 장치.Thin film deposition apparatus comprising a gas supply source for supplying a predetermined pressurized gas to the deposition vessel through the pipe. 제 3 항에 있어서,The method of claim 3, wherein 상기 가압 가스는 불활성 계열의 가스를 포함하는 박막 증착 장치.The pressurized gas includes a thin film deposition apparatus including an inert gas. 제 2 항에 있어서,The method of claim 2, 상기 증착용기 및 차폐부재 사이에 구비되는 실링부재를 더 포함하는 박막 증착 장치.Thin film deposition apparatus further comprises a sealing member provided between the deposition vessel and the shield member.
KR1020070094925A 2007-09-18 2007-09-18 Apparatus for vapor deposition of thin film KR100922005B1 (en)

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JP2006002199A (en) * 2004-06-16 2006-01-05 Seiko Epson Corp Vapor deposition apparatus, vapor deposition method, organic el apparatus, and electronic equipment

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109881185A (en) * 2019-03-06 2019-06-14 北京捷造光电技术有限公司 A kind of vapor deposition reaction device

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