CN103628047A - Device for preparing SiNx dielectric film by chemical vapor deposition - Google Patents
Device for preparing SiNx dielectric film by chemical vapor deposition Download PDFInfo
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- CN103628047A CN103628047A CN201310549290.0A CN201310549290A CN103628047A CN 103628047 A CN103628047 A CN 103628047A CN 201310549290 A CN201310549290 A CN 201310549290A CN 103628047 A CN103628047 A CN 103628047A
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- reaction chamber
- chamber
- dielectric film
- inlet pipe
- vapour deposition
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Abstract
The invention discloses a device for preparing a SiNx dielectric film by chemical vapor deposition, which is characterized by comprising a reaction chamber, wherein a substrate mounting base is arranged in the reaction chamber; the substrate mounting base is perpendicular to the length direction of the reaction chamber; the reaction chamber is connected with a plasma excitation chamber; an opening of the plasma excitation chamber is over against the substrate mounting base; the plasma excitation chamber is connected with a plasmatron; the plasmatron is connected with a waveguide tube; the waveguide tube is provided with a magnet; the plasmatron is connected with a first reaction gas inlet tube; a substrate heater is arranged in the substrate mounting base; the reaction chamber is connected with a vacuum extractor; and a second reaction gas inlet tube is connected with the reaction chamber. In order to overcome the defects in the prior art, the invention provides a device for preparing a SiNx dielectric film by chemical vapor deposition, which has the advantages of simple structure and low production cost.
Description
Technical field
The present invention relates to a kind of device of chemical vapour deposition SiNx dielectric film.
Background technology
Traditional device that forms SiN film on substrate, is mainly magnetic-controlled sputtering coating equipment, and defect is that equipment investment cost is high.Therefore be necessary to provide a kind of simple in structure, input cost low in order to form the device of SiN film on substrate, to satisfy the demands.
Summary of the invention
The object of the invention is, in order to overcome weak point of the prior art, provides a kind of simple in structure, and production cost is low, the device of chemical vapour deposition SiNx dielectric film.
In order to achieve the above object, the present invention adopts following scheme:
A kind of device of chemical vapour deposition SiNx dielectric film, it is characterized in that: include reaction chamber, in described reaction chamber, be provided with substrate mount pad, described substrate mount pad arranges perpendicular to reaction chamber length direction, on described reaction chamber, be connected with plasma exciatiaon chamber, described plasma exciatiaon chamber opening is over against described substrate mount pad, on described plasma exciatiaon chamber, be connected with plasmatron, on described plasmatron, be connected with waveguide, on described waveguide, be provided with magnet, on described plasmatron, be connected with the first reactant gases inlet pipe, in described substrate mount pad, be provided with substrate heater, described reaction chamber is connected with vacuum extractor, on described reaction chamber, be connected with the second reactant gases inlet pipe.
The device of a kind of chemical vapour deposition SiNx dielectric film as above, is characterized in that described magnet is the solenoid being set on waveguide.
The device of a kind of chemical vapour deposition SiNx dielectric film as above, is characterized in that being provided with control valve in the first described reactant gases inlet pipe.
The device of a kind of chemical vapour deposition SiNx dielectric film as above, is characterized in that being connected with respectively nitrogen inlet pipe, oxygen intake pipe and argon inlet pipe in the first described reactant gases inlet pipe.
The device of a kind of chemical vapour deposition SiNx dielectric film as above, is characterized in that being provided with control valve in the second described reactant gases inlet pipe.
The device of a kind of chemical vapour deposition SiNx dielectric film as above, is characterized in that on described reaction chamber, being provided with vacuum pump pipe connecting, and described vacuum extractor is connected with reaction chamber by vacuum pump pipe connecting.
The device of a kind of chemical vapour deposition SiNx dielectric film as above, is characterized in that plasma exciatiaon chamber is silica tube.
In sum, the present invention with respect to its beneficial effect of prior art is:
Product structure of the present invention is simple, and production cost is relatively low.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing explanation and embodiment, the invention will be further described:
The device of a kind of chemical vapour deposition SiNx dielectric film as shown in Figure 1, include reaction chamber 1, in described reaction chamber 1, be provided with substrate mount pad 15, described substrate mount pad 15 is perpendicular to reaction chamber 1 length direction setting, on described reaction chamber 1, be connected with plasma exciatiaon chamber 2, described plasma exciatiaon chamber 2 openings are over against described substrate mount pad, on described plasma exciatiaon chamber 2, be connected with plasmatron 3, on described plasmatron 3, be connected with waveguide 4, on described waveguide 4, be provided with magnet 5, on described plasmatron 3, be connected with the first reactant gases inlet pipe 6, in described substrate mount pad 15, be provided with substrate heater 7, described reaction chamber 1 is connected with vacuum extractor, on described reaction chamber 1, be connected with the second reactant gases inlet pipe 8.
Magnet 5 described in the present invention is for being set in the solenoid on waveguide 4.
The present invention is provided with control valve 9 in the first described reactant gases inlet pipe 6.
In the present invention, in the first described reactant gases inlet pipe 6, be connected with respectively nitrogen inlet pipe 10, oxygen intake pipe 11 and argon inlet pipe 12.In the second described reactant gases inlet pipe 8, be provided with control valve 9.On described reaction chamber 1, be provided with vacuum pump pipe connecting 13, described vacuum extractor is connected with reaction chamber 1 by vacuum pump pipe connecting 13.
This device is excited plasma method with microwave and is deposited at low temperatures SiN
xdielectric film.In apparatus of the present invention, microwave excited plasma chamber and reaction chamber are separated, and the microwave that frequency is 2.45GHZ imports in the silica tube that diameter is 32mm by long rectangular wave conduit, and this silica tube is plasma exciatiaon chamber.Two coaxial magnetic coils are placed in plasma body chamber outer wall for electron cyclotron plasma exciatiaon.Substrate 14 is placed in reaction chamber, and apart from region of discharge 300mm, substrate can be heated by substrate heater.The vacuum tightness of vacuum chamber can reach 1.33*10
-3pa, the N being excited in plasma body
2be diffused into reaction chamber, with unexcited SiH
4reaction, thus deposited SiN
xfilm.This film all has desirable stoicheiometry in very wide scope of experiment, and has excellent dielectric properties.
Electron cyclotron resonace occurs under 875G magnetic field, thereby obtains the plasma body highly activating.In this depositing system, ion is extracted out and enters sediment chamber and flow to substrate and film forming from plasma chamber.At deposition SiN
xn during film
2be introduced in plasma chamber, SiH
4be introduced in sediment chamber.And at deposition SiO
2during film, O
2be introduced in plasma chamber.Utilize this microwave electron cyclotron resonance plasma chemical vapour deposition, can add hot radical and just can obtain high-quality thin film.
The mode of deposition of apparatus of the present invention use procedure:
Substrate: glass;
Substrate temperature: room temperature
Background gas pressure: 2.5*10
-4pa
SiH
4flow: 30SCCM
Air pressure: 1.33*10
-3～0.25Pa
Microwave frequency: 2.45GHZ
Microwave power 320W
Magnetic field: 875G.
More than show and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (6)
1. the device of a chemical vapour deposition SiNx dielectric film, it is characterized in that: include reaction chamber (1), in described reaction chamber (1), be provided with substrate mount pad (15), described substrate mount pad (15) is perpendicular to reaction chamber (1) length direction setting, on described reaction chamber (1), be connected with plasma exciatiaon chamber (2), described plasma exciatiaon chamber (2) opening is over against described substrate mount pad (15), on described plasma exciatiaon chamber (2), be connected with plasmatron (3), on described plasmatron (3), be connected with waveguide (4), on described waveguide (4), be provided with magnet (5), on described plasmatron (3), be connected with the first reactant gases inlet pipe (6), in described substrate mount pad (15), be provided with substrate heater (7), described reaction chamber (1) is connected with vacuum extractor, on described reaction chamber (1), be connected with the second reactant gases inlet pipe (8).
2. the device of a kind of chemical vapour deposition SiNx dielectric film according to claim 1, is characterized in that described magnet (5) is for being set in the solenoid on waveguide (4).
3. the device of a kind of chemical vapour deposition SiNx dielectric film according to claim 1, it is characterized in that being provided with control valve (9) in the first described reactant gases inlet pipe (6), in the first described reactant gases inlet pipe (6), be connected with respectively nitrogen inlet pipe (10), oxygen intake pipe (11) and argon inlet pipe (12).
4. the device of a kind of chemical vapour deposition SiNx dielectric film according to claim 1, is characterized in that being provided with control valve (9) in the second described reactant gases inlet pipe (8).
5. the device of a kind of chemical vapour deposition SiNx dielectric film according to claim 1, it is characterized in that being provided with vacuum pump pipe connecting (13) on described reaction chamber (1), described vacuum extractor is connected with reaction chamber (1) by vacuum pump pipe connecting (13).
6. the device of a kind of chemical vapour deposition SiNx dielectric film according to claim 1, is characterized in that plasma exciatiaon chamber (2) is for silica tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549290.0A CN103628047A (en) | 2013-11-07 | 2013-11-07 | Device for preparing SiNx dielectric film by chemical vapor deposition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549290.0A CN103628047A (en) | 2013-11-07 | 2013-11-07 | Device for preparing SiNx dielectric film by chemical vapor deposition |
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|---|---|
| CN103628047A true CN103628047A (en) | 2014-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310549290.0A Pending CN103628047A (en) | 2013-11-07 | 2013-11-07 | Device for preparing SiNx dielectric film by chemical vapor deposition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110396675A (en) * | 2019-07-10 | 2019-11-01 | 中国科学院电工研究所 | A kind of preparation method of plasma enhanced chemical vapor deposition metallic film |
Citations (4)
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|---|---|---|---|---|
| CN1630925A (en) * | 2001-12-04 | 2005-06-22 | 德拉卡纤维技术有限公司 | Device for applying electromagnetic microwave radiation in a plasma cavity |
| US20090026963A1 (en) * | 2005-04-26 | 2009-01-29 | Masayasu Susuki | Surface wave excitation plasma generator and surface wave excitation plasma processing apparatus |
| CN101410549A (en) * | 2007-01-29 | 2009-04-15 | 住友电气工业株式会社 | Microwave plasma CVD system |
| US20120068603A1 (en) * | 2010-09-16 | 2012-03-22 | National University Corporation Nagoya University | Plasma generating apparatus, plasma processing apparatus and plasma processing method |
-
2013
- 2013-11-07 CN CN201310549290.0A patent/CN103628047A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1630925A (en) * | 2001-12-04 | 2005-06-22 | 德拉卡纤维技术有限公司 | Device for applying electromagnetic microwave radiation in a plasma cavity |
| US20090026963A1 (en) * | 2005-04-26 | 2009-01-29 | Masayasu Susuki | Surface wave excitation plasma generator and surface wave excitation plasma processing apparatus |
| CN101410549A (en) * | 2007-01-29 | 2009-04-15 | 住友电气工业株式会社 | Microwave plasma CVD system |
| US20120068603A1 (en) * | 2010-09-16 | 2012-03-22 | National University Corporation Nagoya University | Plasma generating apparatus, plasma processing apparatus and plasma processing method |
Non-Patent Citations (1)
| Title |
|---|
| 李青年: "《薄膜制品设计生产加工新工艺与应用新技术实务全书第二卷》", 30 April 2004, article "化学气相沉积", pages: 762-764 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110396675A (en) * | 2019-07-10 | 2019-11-01 | 中国科学院电工研究所 | A kind of preparation method of plasma enhanced chemical vapor deposition metallic film |
| CN110396675B (en) * | 2019-07-10 | 2021-12-31 | 中国科学院电工研究所 | Preparation method of plasma enhanced chemical vapor deposition metal film |
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Application publication date: 20140312 |
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