JP2007201357A - Deposition device and deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a deposition device which supplies a treated gas to the entire surface of a substrate at a high speed and with high uniformity. <P>SOLUTION: The deposition device for heating the substrate mounted on a mounting base provided inside a treatment vessel, supplying a raw material gas to the substrate, and forming a thin film comprises a self-excitation vibration nozzle 32 for the raw material gas for supplying the raw material gas from the side part to the substrate, and an exhaust port 61 provided holding the substrate there between with the self-excitation vibration nozzle 32. The self-excitation vibration nozzle 32 comprises a gas supply path for supplying the gas, a gas discharge port formed at the distal end of the gas supply path, and a connecting flow path whose one end and other end are connected to the left and right of the entrance of the gas discharge port. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method for forming a film by supplying a source gas from a side to a substrate.

  Conventionally, when an integrated circuit is formed on a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) in a semiconductor manufacturing process, a metal or metal compound is formed by a CVD (Chemical Vapor Deposition) method in order to meet the demand for miniaturization of wiring. A film formation process may be performed. This CVD method will be briefly described by taking as an example the case of forming an Al (aluminum) film on a wafer surface made of, for example, SiC (silicon carbide). First, a wafer is placed on a mounting table in which a heating element is embedded in a processing container, and then heated from the shower head provided above the mounting table to the wafer, for example, dimethyl as a source gas while heating the wafer. Aluminum hydride (DMAH) or the like is supplied at a predetermined flow rate. The DMAH causes a chemical reaction due to the heat of the wafer, and Al is deposited on the wafer surface to form a film.

  By the way, in recent years, semiconductors containing gallium nitride compounds such as GaN (gallium nitride), AlGaN (aluminum gallium nitride), InGaN (indium gallium nitride), InAlGaN (indium aluminum gallium nitride) are used as elements such as light emitting diodes and laser diodes. As a result, the demand is rapidly increasing mainly in the optical communication field. In the step of manufacturing the gallium nitride compound semiconductor, by using the CVD method, for example, an organic metal gas such as trimethylgallium, trimethylindium, or trimethylaluminum and an ammonia gas are used as source gases and placed on a placing table in the processing vessel. In some cases, a thin film of the gallium nitride compound may be formed by supplying each of these source gases onto the formed wafer.

  However, in order to form a film by chemically reacting each of these source gases on the wafer, it is necessary to heat the wafer at a high temperature of, for example, 800 ° C. or more. In this case, thermal convection generated above the wafer becomes large. At this time, when each source gas is supplied to the wafer using the shower head, each source gas is prevented from diffusing around the wafer above the wafer W by the thermal convection and reaching the surface of the wafer. As a result, a sufficient amount of the gallium nitride compound is not uniformly deposited on the wafer, and a desired film thickness and film quality may not be obtained in each part of the wafer.

  Therefore, in order to suppress the influence of such heat convection, instead of supplying the source gas vertically from the shower head, a film forming apparatus that supplies the source gas in the lateral direction to the wafer as shown in Patent Document 1 is provided. Use is under consideration. Specifically, a wafer is placed on a mounting table provided in a horizontal reaction tube, a gas supply unit having, for example, a nozzle is provided at one opening of the reaction tube, and the other opening of the reaction tube is provided. It has been studied to supply the source gas in parallel to the wafer by providing the exhaust unit and supplying the source gas from the nozzle and exhausting by the exhaust unit.

  However, when the source gas is supplied from the nozzle, if the distance from the nozzle to the wafer is small, the jet flow from the nozzle only hits the wafer locally, so the source gas may not be supplied uniformly to the entire wafer. . If a sufficient distance between the nozzle and the wafer is provided to prevent such a problem, the film forming apparatus may be increased in size.

  In order to prevent such problems, the nozzle gas discharge port is enlarged, for example, formed as a slit having a length that covers the width of the wafer, and the source gas is supplied to the entire wafer through the slit. However, since the flow rate of the source gas supplied from the discharge port decreases as the discharge port becomes larger in this way, the time required for film formation may increase. In addition, the film quality may be deteriorated by an undesirable gas phase reaction.

The nozzle is called a self-excited vibration nozzle as described in Patent Document 2, Non-Patent Document 1, and Non-Patent Document 2, and is discharged from the discharge port by a pressure difference generated in the flow path provided near the discharge port of the nozzle. Although self-excited vibration nozzles that vibrate the direction of the discharged gas are known, these documents do not describe the single-wafer heat treatment apparatus or the problems described above.
JP 2002-371361 (paragraph 0014, FIG. 1) JP 2004-275985 (paragraph 0010, FIGS. 1 to 3) Research on Flip-Flop Jet Nozzle for Air Shower Equipment Proceedings of the Japan Mechanical Fluid Engineering Division 2004.11.25-26 Kitakyushu Self-excited oscillation of a flip-flop nozzle jet The 32nd Fluid Mechanics Lecture 2000/10

  The present invention has been made under such circumstances, and an object of the present invention is to provide a film forming apparatus capable of supplying a processing gas to the entire surface of the substrate at high speed and with high uniformity and an apparatus therefor. The film forming method used is to be provided.

  The film forming apparatus of the present invention is a film forming apparatus for forming a thin film by heating a substrate mounted on a mounting table provided in a processing container and supplying a raw material gas to the substrate. A self-excited oscillating nozzle for source gas for supplying a source gas from one side, and an exhaust port provided with a substrate sandwiched between the self-excited oscillating nozzle and the self-excited oscillating nozzle A gas supply path to be supplied; a gas discharge port formed at the tip of the gas supply path; and a connecting flow path having one end and the other end connected to the left and right of the inlet of the gas discharge port. Features. With such a configuration, when the gas flows from the gas supply path to the gas discharge port, the state where the pressure at one end of the connection channel is alternately higher and lower than the other end occurs, and the gas ejection flow is changed to the left and right. Vibrate.

  In this film forming apparatus, a self-excited vibration nozzle for downflow gas that supplies a downflow gas for pressing the source gas against the surface of the substrate may be provided above the self-excited vibration nozzle for supplying the source gas. The self-excited oscillating nozzle for supplying the raw material gas is preferably provided with a self-excited oscillating nozzle for supplying the first source gas, and above or below the self-excited oscillating nozzle. And a self-excited vibration nozzle for supplying a second source gas that reacts to generate a thin film component.

  The film forming method of the present invention is a film forming method for forming a thin film by heating a substrate mounted on a mounting table provided in a processing vessel and supplying a raw material gas to the substrate. A self-excited vibration nozzle having a supply path, a gas discharge port formed at the tip of the gas supply path, and a connecting flow path having one end and the other end connected to the left and right of the inlet of the gas discharge port The step of supplying the source gas from the side to the substrate, the step of exhausting the self-excited vibration nozzle from the exhaust port provided across the substrate, and the gas supply of the self-excited vibration nozzle And a step of vibrating the gas jet flow from side to side by alternately causing a state where the pressure at one end of the connection flow path is higher and lower than the other end by flowing gas from the passage to the gas discharge port. It is characterized by. In this film forming apparatus and film forming method, the processing temperature of the substrate is, for example, 800 ° C. or more.

  In the present invention, the source gas for film formation is supplied to the substrate from the side, and the jet flow of the gas is vibrated from side to side by the self-excited vibration nozzle, so that strong thermal convection is generated. Even in an easy high temperature process, the gas can be supplied uniformly over the entire surface of the substrate. In addition, when supplying gas from a slit having a width corresponding to the mounting area of the wafer W, the flow rate cannot be increased if the process pressure is high. However, it is not necessary to greatly widen the discharge port by swinging the gas discharge direction left and right. Gas can be supplied uniformly. Therefore, even if the process pressure is high, the gas flow rate can be increased, and high-speed processing can be handled.

  Embodiments of a film forming apparatus of the present invention will be described with reference to the drawings. 1 and 2 are a longitudinal side view and a transverse plan view of the film forming apparatus 1, respectively. This film forming apparatus 1 is arranged on a circular support plate 21 as shown in FIG. 2 in the circumferential direction, and at the same time, GaN (gallium nitride) is formed on six wafers W which are substrates supported by the support plate 21. The support plate 21 is transported to the film forming apparatus 1 by a transport mechanism (not shown) while holding each wafer W in this manner. As a material of the wafer W, SiC, sapphire, GaN or the like having good thermal conductivity is preferably used. The film forming apparatus 1 includes a processing vessel 10 having an upper cylindrical portion 11 on the upper side and a small cylindrical portion 12 connected on the lower side thereof. In FIG. 1, reference numeral 13 denotes a support member that supports the processing container 10. Further, as shown in FIG. 2, a transport port 14 for transporting the support plate 21 into the processing container 10 is provided on the side wall of the processing container 10, and this transport port 14 can be opened and closed by a gate valve 15. It is configured.

  A circular mounting table 22 for mounting the wafer W horizontally is provided through a support plate 21 at the center of the processing container 10. The upper surface of the mounting table 22 is, for example, an electrostatic chuck (not shown). Thus, the support plate 21 can be sucked and held. Further, the mounting table 22 has three holes 22a formed in the vertical direction along the circumferential direction, and three lifter pins 27 (described later) can be projected and retracted on the mounting table 22 through the holes 22a. Has been. Further, a heating means 23 constituted by a heater or the like for heating each wafer W to a predetermined temperature via the support plate 21 is embedded in the mounting table 22. For example, the heating means 23 is configured so that the temperature of the wafer W can be raised to, for example, 800 ° C. or more during the film forming process in order to form a gallium nitride-based compound from a source gas to be described later.

  A shaft portion 24 is connected to the center lower portion of the mounting table 22, and the shaft portion 24 extends from below the small-diameter cylindrical portion 12 to the outside of the processing container 10 and is connected to the drive portion 25. The drive unit 25 rotates the mounting table 22 around the vertical axis via the shaft unit 24, and the support plate 21 mounted on the mounting table 22 holds the wafer W as the mounting table 22 rotates. To rotate around the vertical axis. A bearing portion 26 having a sealing function is provided at the center of the lower portion of the small-diameter cylindrical portion 12 so as to surround the shaft portion 24, so that airtightness between the shaft portion 24 and the processing container 10 is ensured. .

  The lifter pin 27 is supported at its lower end by a lift arm 28 provided below the mounting table 22. A drive rod 28a is provided below the lift arm 28, and the lifter pin 27 is configured to be movable up and down by the action of the lift mechanism 29 via the lift arm 28 and the drive rod 28a. The lifter pin 27 protrudes on the mounting table 22 through the hole 22a and supports the lower surface of the support plate 21 conveyed by the conveying mechanism, so that the support plate 21 is transferred between the conveying mechanism and the mounting table 22. Has a role to do.

  A deposition shield 16 is provided inside the processing container 10 so as to cover the inner walls of the cylindrical portions 11 and 12 and to surround the mounting table 22. The deposition shield 16 has a role of preventing a compound generated from a raw material gas for film formation from adhering to the processing vessel 10 and is made of, for example, quartz. Further, O-rings 17 and 18 are provided concentrically on the upper portion of the large-diameter cylindrical portion 11. A top plate 19 made of, for example, quartz is provided so as to cover the processing vessel 10 via the O-rings 17 and 18, thereby the inside of the processing vessel 10 is configured to be airtight.

  On the side wall of the large-diameter cylindrical portion 11, for example, a rectangular gas introduction port 30 is formed horizontally at a position displaced laterally by 90 degrees from the transfer port 14 when viewed from the center of the processing container 10. Three-stage self-excited vibration nozzles 31, 32, and 33 that are gas supply nozzles are arranged from the top to the bottom in this order at the outer end portion of 30. In addition, partition plates 34 and 35 for guiding the gas supplied from the nozzles 31 to 33 forward (inside the processing vessel 10) are provided in this order from the top between the nozzles 31 to 33. Yes. In FIG. 1, reference numeral 36 denotes a sealing member provided on the outer wall of the processing container 10, which has a role of closing the gas inlet 30 and maintaining airtightness in the processing container 10.

  As shown in FIG. 1, the gas introduction port 30 is perforated so that the upper wall surface thereof is inclined downward toward the processing space S on the mounting table 22. This is because N 2 (nitrogen) gas, which is a downflow gas supplied from the self-excited vibration nozzle 31, is guided by the wall surface so as to go obliquely downward as will be described. The guided downflow gas presses the gas containing the source gas supplied from the self-excited vibration nozzles 32 and 33 onto the wafer W, so that these gases are caused by the thermal convection generated around the wafer W. It has a role to suppress diffusion around.

  Gas supply pipes 41 to 43 are connected to the self-excited vibration nozzles 31 to 33, respectively. The upstream sides of the gas supply pipes 41 and 42 are N2 gas and NH3 (ammonia) via the gas supply equipment groups 41a and 42a, respectively. Gas) is connected to stored gas supply sources 41b and 42b. The upstream side of the gas supply pipe 43 is branched and connected to a gas supply source 43b storing TMG (trimethylgallium) gas and a gas supply source 44b storing H2 (hydrogen) gas, respectively. Gas supply device groups 43a and 44a are interposed in the branch paths of the pipe 43, respectively.

  Each of the gas supply device groups 41a to 44a includes, for example, a mass flow controller and a valve, and is connected to the control unit 100 provided in the film forming apparatus 1 and receives a control signal from the control unit 100 to supply gas. The flow rate of the gas supplied from the sources 41b to 44b to the self-excited vibration nozzles 31 to 33 is controlled. When the film formation process is performed on the wafer W, N2 gas from the upper self-excited vibration nozzle 31, ammonia gas from the middle nozzle 32, and a mixed gas of H2 gas and TMG gas from the lower nozzle 33, respectively. The wafer is supplied in parallel to the wafer W toward the processing space S at a predetermined flow rate, that is, laterally with respect to the wafer W.

The TMG gas and NH3 gas in the mixed gas are first and second source gases for generating a GaN by chemically reacting with each other to form a film on the wafer W, and the H2 gas is the TMG gas. It is used as a carrier gas.
A mixed gas of TMG gas and H2 gas may be supplied from the middle nozzle 32, and NH3 gas may be supplied from the lower nozzle 33. Also, H2 gas may be used as carrier gas for NH3 gas.

  The self-excited vibration nozzles 31 to 33 are configured in the same manner, for example, and the nozzle 32 will be described in detail here as a representative. FIGS. 3 and 4 are a perspective view and a cross-sectional plan view of the nozzle 32, respectively. The chain line in FIG. 3 and the dotted arrow in FIG. 4 indicate the flow of NH3 gas flowing in the nozzle 32. The nozzle 32 includes a connection channel 55, a gas discharge port 52 provided on one surface of the connection channel 55, and a main channel 54 provided on the other surface of the connection channel 55. The gas discharge port 52 is configured in a square cylinder shape having a trapezoidal cross section that is expanded in the lateral direction toward the tip (toward the processing space S). The gas supply pipe 42 is connected to the proximal end side of the main flow path 54, and the gas supply pipe 42 communicates with a main flow path 54 that is a gas supply path provided to face the distal end side. The distal end portion of the main flow channel 54 and the base end portion of the gas discharge port 52 are opposed to each other with the connection flow channel 55 interposed therebetween, and thus the main flow channel 54 is located between the gas discharge port 52 via a part of the connection flow channel 55. You will be in communication. In other words, at the entrance of the gas discharge port 52, one end and the other end of the connection channel 55 are opposed to each other and are connected to the main channel 54 so as to sandwich the main channel 54 from the left and right. The connection channel 55 is physically an annular channel. However, when NH3 gas is supplied from the gas supply pipe 42 to the main channel 54, most of the NH3 gas flows from the tip of the main channel 54 to the tip. Since the gas flows toward the base end portion of the gas discharge port 52 facing the portion, the gas flowing through the connection flow channel 55 hardly flows across the gas flow. And the left and right sides of the space between the gas discharge port 52 and the base end of the gas discharge port 52 correspond to one end and the other end of the connection channel 55, respectively. 3 to 5, one end (right end) of the connection channel 55 is denoted by reference numeral 57, and the other end (left end) is denoted by reference numeral 58.

  When NH 3 gas is supplied from the gas supply pipe 52 to the main flow path 54, the NH 3 gas flows through the main flow path 54, and most of the NH 3 gas is in the processing container 10 formed by the pressure in the processing container 10 and the exhaust pipe 61 described later. The other NH3 gas discharged from the gas discharge port 52 to the processing space S as a jet flow inclined to one of the left and right under the influence of the exhaust flow, and flowing into the main flow path 54 is in the connection flow path 55. Flow into. In the connection channel 55, the NH3 gas is inclined at the end, that is, the right end that is one end of the connection channel 55 when the NH3 gas is discharged from the discharge port 52 as shown in FIG. At 57, the pressure drops. Due to the decrease in pressure, a flow of NH3 gas toward the right end 57 is formed in the connection channel 55 as shown in FIGS.

  Referring also to FIG. 5, the pressure at the right end 57 rises due to the flow of the NH 3 gas in the connection channel 55 and the pressure in the connection channel 55 is made uniform. NH3 gas flows toward the right end 57 due to inertia (FIG. 5A), and the pressure at the right end 57 of the connection channel 55 becomes higher than the pressure at the left end 58, which is the other end of the connection channel 55, Due to the pressure difference between the right end 57 and the left end 58, the NH3 gas jet flow discharged from the discharge port 52 oscillates gradually from the right side toward the center side (FIG. 5B), and when the pressure difference further increases, this time. Is supplied to the processing space S from the discharge port 52 so that the jet flow is inclined to the left side.

  When the NH3 gas jet flow is inclined to the left in this way, the pressure at the left end 58 of the connection channel 55 is reduced, and a flow of NH3 gas toward the left end 58 is formed in the connection channel 55 (FIG. 5C). )). Then, due to the flow of NH3 gas to the left end 58, the pressure at the left end 58 becomes larger than the pressure at the right end 57, and the jet flow of NH3 gas supplied from the discharge port 52 again tilts to the right. While the NH 3 gas is supplied from the gas supply source 42b to the nozzle 32, the above operation is automatically repeated at a constant cycle. For example, as shown by the arrows in FIG. The wafer W is discharged into the processing space S so as to be parallel to the wafer W while vibrating in the left and right directions so as to cover the widths of all the wafers W, and then exhausted from the processing space S by an exhaust pipe 61 described later. Removed. N2 gas and a mixed gas of TMG gas and H2 gas are also discharged into the processing space S in the same manner as this NH3 gas.

  1 and 2, an exhaust port 62 of the exhaust pipe 61 is opened on the side wall in the processing container 10 so as to face, for example, the gas inlet 30, and the other end of the exhaust pipe 61 is a pressure adjusting unit. It is connected to an exhaust means 64 such as a vacuum pump through 63. In the drawing, reference numeral 65 denotes a pressure measuring unit provided with a pressure sensor 66 for detecting the pressure in the processing container 10, and is connected to the control unit 100. The control unit 100 sends a control signal to the pressure adjusting unit 63 based on the pressure value measured by the pressure measuring unit 65 when performing the film forming process as will be described in the operation of the film forming apparatus 1 described later. The pressure adjusting unit 63 adjusts the exhaust flow rate based on the control signal, so that the processing space S is maintained at a predetermined pressure set in advance, for example.

  The control unit 100 is connected to the heating unit 23 and the driving unit 25, respectively, and controls the wafer W to be heated to a predetermined temperature when performing the film forming process, and the mounting table 22 has a predetermined speed. It is controlled so that it is rotated by.

  Next, a series of operations performed by the film forming apparatus 1 will be described. First, the gate valve 15 is opened, and the support 21 holding the six wafers W is loaded into the processing container 10 through the transfer port 14 by a transfer mechanism (not shown). When the support plate 21 is conveyed onto the mounting table 22, the lifter pin 27 is lifted by the lifting mechanism 29 via the drive rod 28 a and the lift arm 28 to support the back surface of the support plate 21. Thereafter, the lifter pins 27 descend while supporting the support plate 21, the support plate 21 is placed on the mounting table 22, and the wafer W is heated via the support plate 21 on which the heating means 23 is placed, for example. The temperature of the wafer W is raised to 1200 degrees. Further, the mounting table 22 rotates around the vertical axis at, for example, 5 to 100 rpm with the driving unit 25 holding the support plate 21.

  On the other hand, when the transfer mechanism is retracted from the processing container 10 and the gate valve 15 is closed, the processing space S is then exhausted by the exhaust means 64 and N2 gas is supplied from the self-excited vibration nozzle 31 and NH3 gas is supplied from the nozzle 32. The mixed gas of H2 gas and TMG gas is supplied from the nozzle 33 to the processing space S, for example, simultaneously or after the supply of N2 gas, and the processing space S is, for example, 93325 Pa ( 700 Torr). FIG. 7 shows the flow of gas supplied from the nozzles 31 to 33. The flow of N2 gas is indicated by a solid line, the flow of NH3 gas is indicated by a dotted line, and the flow of mixed gas of TMG gas and H2 gas is indicated by a chain line. Respectively. The mixed gas and NH3 gas discharged into the processing space S are pressed toward the support 21 by the N2 gas, flow in the vicinity of the surface of the wafer W, receive the heat of the wafer W, and the TMG gas in the mixed gas Chemical reaction with NH 3 gas generates GaN, and the generated GaN is deposited on the wafer W. Methane gas and unreacted gas, which are byproducts of the chemical reaction, flow into the exhaust pipe 61 and are removed from the processing space S. As described above, each gas is discharged from the nozzles 31 to 33 to the processing space S so that the jet flow oscillates left and right, so that the processing gas spreads over the entire surface of each wafer W and is high on the surface of the wafer W. GaN is deposited with uniformity and the thin film is formed.

  When the process is performed for a predetermined time, the supply of gas from the self-excited vibration nozzles 31 to 33, the rotation of the mounting table 22, the heating of the wafer W and the exhaust of the processing space S are stopped, and then the transfer operation by the lifter pins 27 and the transfer mechanism Is performed in the reverse order of the loading operation described above, and the support plate 21 is unloaded from the processing container 10 while holding the wafer W.

  In this embodiment, the processing gas is supplied from the side wall of the processing vessel 10 to form a side flow, and the gas discharge direction is swung left and right by the self-excited vibration nozzle, so that a high temperature process in which strong thermal convection is likely to occur. For example, even in a high-temperature process in which the temperature of the wafer W is 800 ° C. or more, the gas can be supplied uniformly over the entire surface of the wafer W. In addition, when supplying gas from a slit having a width corresponding to the mounting area of the wafer W, the flow rate cannot be increased if the process pressure is high. However, it is not necessary to greatly widen the discharge port by swinging the gas discharge direction left and right. Gas can be supplied uniformly. Therefore, even if the process pressure is high, the gas flow rate can be increased, and high-speed processing can be handled. Therefore, the film forming apparatus according to this embodiment is suitable for high temperature and high pressure processes. Furthermore, since the gas jet flow is self-excited from side to side using the gas flow, there is no need to provide external power or movable parts, and there is no need to provide a large distance between the wafer W and each self-excited oscillation nozzle. However, the source gas can be supplied to the entire wafer W. Therefore, it is possible to configure a simple apparatus that is inexpensive and suppresses an increase in size. Further, the self-excited vibration nozzle 31 for discharging the downflow gas is provided on the self-excited vibration nozzles 32 and 33 for discharging the film forming gas, and the film forming gas is pressed against the surface of the wafer W by the downflow gas. By doing so, heat convection hardly occurs, and higher in-plane uniformity can be obtained with respect to gas supply.

  In this embodiment, the source gas is discharged from the nozzles 32 and 33 in the horizontal direction, but the wafers of the respective gases due to thermal convection generated around the wafer W to the same extent as in the case of discharging in the horizontal direction in this way. The case where the source gas is discharged obliquely upward or obliquely downward within a range in which the diffusion of W to the periphery is suppressed is also included in the scope of the right of the present invention.

  Further, the film forming apparatus 1 is not limited to being used when forming a GaN film, and is also used, for example, when forming another gallium nitride compound. More specifically, for example, when depositing InGaN, which is a gallium nitride compound, for example, TMI (trimethylindium) gas, which is a source gas of InGaN, and H 2, which is a carrier gas, are formed on the lower layer side of the self-excited vibration nozzle 31. A self-excited vibration nozzle for discharging a gas mixture with gas is provided, and the self-excited vibration nozzle has a four-stage configuration. As described above, the wafer W is heated to discharge the gas from the nozzle to the processing space S, respectively. InGaN is deposited on W. AlGaN may be formed by supplying a mixed gas of TMAl (trimethylaluminum) and its carrier gas, H2 gas, instead of the mixed gas of TMI gas and H2 gas from the added nozzle. . In addition, an InAlGaN film is formed on the wafer W by discharging the downflow gas and the gas containing TMG, the gas containing TMAl, the gas containing TMI, and the NH3 gas into the processing space S with five stages of nozzles. It may be.

  As the downflow gas supplied from the upper self-excited vibration nozzle 31, for example, H2 gas may be used in addition to the N2 gas. Further, as a carrier gas for TMG gas, TMAl gas and TMI, N2 gas may be used instead of H2 gas.

It is a vertical side view which shows embodiment of the film-forming apparatus of this invention. It is a cross-sectional top view which shows the said embodiment. It is a perspective view of the self-excited vibration nozzle provided in the film forming apparatus. It is a cross-sectional plan view of the self-excited vibration nozzle. It is explanatory drawing which showed a mode that the gas discharged from the self-excited vibration nozzle vibrates. It is explanatory drawing which showed a mode that gas was discharged to the process space of the said film-forming apparatus from the said self-excited vibration nozzle. It is explanatory drawing which showed the airflow of the said process space at the time of a film-forming process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 10 Processing container 21 Support plate 22 Mounting stand 23 Heating means 31, 32, 33 Self-excited vibration nozzle

Claims (7)

In a film forming apparatus for forming a thin film by heating a substrate mounted on a mounting table provided in a processing container and supplying a raw material gas to the substrate,
A self-excited vibration nozzle for source gas for supplying source gas from the side to the substrate;
An exhaust port provided with the substrate sandwiched between the self-excited vibration nozzle, and
The self-excited vibration nozzle includes a gas supply path for supplying gas,
A gas outlet formed at the tip of the gas supply path;
A film forming apparatus comprising: a connecting channel having one end and the other end connected to the left and right of the inlet of the gas discharge port.   The self-excited vibration nozzle for downflow gas for supplying the downflow gas for pressing the source gas against the surface of the substrate is provided above the self-excited vibration nozzle for supplying the source gas. 2. The film forming apparatus according to 1.   The self-excited oscillating nozzle for supplying the source gas is disposed above or below the self-excited oscillating nozzle for supplying the first source gas and reacts with the first source gas. The film forming apparatus according to claim 1, further comprising a self-excited vibration nozzle for supplying a second source gas for generating a thin film component.   The film forming apparatus according to claim 1, wherein a substrate processing temperature is 800 ° C. or more. In a film forming method for forming a thin film by heating a substrate mounted on a mounting table provided in a processing container and supplying a raw material gas to the substrate,
A gas supply path for supplying a gas; a gas discharge port formed at the tip of the gas supply path; and a connecting flow path having one end and the other end connected to the left and right of the inlet of the gas discharge port. Supplying a source gas from the side to the substrate using a self-excited vibration nozzle;
Exhausting from the exhaust port provided across the substrate with respect to the self-excited vibration nozzle;
By flowing gas from the gas supply path of the self-excited vibration nozzle to the gas discharge port, the state where the pressure at one end of the connection flow path is alternately higher and lower than the other end, thereby changing the gas jet flow from side to side A step of vibrating;
A film forming method comprising:   Including a step of supplying a downflow gas for pressing the source gas against the surface of the substrate from a downflow gas self-excited oscillation nozzle provided above the self-excited oscillation nozzle for supplying the source gas. The film forming method according to claim 5. The film forming method according to claim 5 or 6, wherein the processing temperature of the substrate is 800 ° C or higher.

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