JPH0353515A - Organic metal vapor growth device - Google Patents

Abstract

PURPOSE:To enhance airtightness and to completely made uniform the film thickness and composition of grown crystal by a method wherein a dissipation tube attached to one end of the introduction tube, located inside a reaction tube or a growth chamber, is allowed to rotate. CONSTITUTION:A dissipation tube 11 is rotated by applying AC voltage on an electromagnet 13. At this time, the frequency of the AC voltage applied to the electromagnet 13 is properly adjusted in order to prevent the gas stream 10, such as the material gas and the like dissipated from the dissipation tube 11, from becoming a turbulent stream. As a result, the number of molecules and the ratio of molecular number of the carrier gas, material gas, organic metal and the like reaching in the unit time of a substrate become the same on the whole surface of the substrate 4, and a crystal grown layer, having overall uniform film thickness and uniform compositional ratio, can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an organometallic vapor phase growth apparatus.

[Conventional technology]

Figure 4 shows the conventionally used metal organic chemical vapor deposition (MOC).
VD) is a configuration diagram schematically showing an example of an apparatus, and in this figure, 1 is a reaction tube made of quartz or the like, and 2 is an introduction tube for material gas containing carrier gas and organic metal vapor (hereinafter referred to as material gas, etc.). , 3 is the upper sealed part of the reactor 1, 4
1 is a substrate for crystal growth (hereinafter simply referred to as a substrate), 1 is a layer on which the substrate 4 is placed, 6 is a carbon susceptor for high-frequency heating, 7 is a sash, a support rod, and 8 is a lower part of the reaction tube 1 10 is a gas flow schematically shown; 14 is a movable special sealing device; and 15 is a rotation motor.

Next, the operation will be explained.

The carbon susceptor 6 is heated and the substrate 4 is heated by a method such as applying a high frequency magnetic field from the outside.

When a material gas or the like is introduced through the introduction IW 2 in this state, crystals grow on the substrate 4 due to a thermal decomposition reaction due to the radiant heat of the carbon susceptor 6, a reaction of molecules adsorbed to the substrate 4, or the like. In this case, the substrate 4 is rotated by the rotation motor 15 via the susceptor support rod 7.

[Problem to be solved by the invention]

In the conventional MOCVD apparatus as described above, the substrate 4 is rotated through a special movable sealing device 14 in order to prevent outside air from entering inside the reactor 1 . This movable special sealing device 14 is currently in use using a Wilson seal, etc., but the degree of sealing is not perfect, especially when growing crystals in a reduced pressure growth where the inside of the reaction tube 1 is lower than 1 atmosphere. is having a negative impact on. Furthermore, products formed by the excess gas accumulate at the bottom of the reaction tube 1,
This caused problems such as frequent failures of the movable special sealing device 14.

[Means to solve the problem]

The organometallic vapor phase growth apparatus according to the present invention is provided with a driving means for rotating a diffusion tube rotatably attached to one end of an introduction tube in a reaction tube or a growth chamber.

[Function] The organometallic vapor phase growth apparatus of the present invention rotates the diffusion tube rotatably connected to the introduction pipe for material gas, etc., so that the density distribution of material gas, etc. is uniform in the vicinity of the crystal growth substrate. The thickness and composition of the grown crystal become uniform over the entire surface.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a block diagram of an MOCVD apparatus showing an embodiment of the present invention. In FIG. 1, the same reference numerals as in FIG. 4 indicate the same components; 11 is a rotatably provided diffusion tube for dissipating organic metal vapor, material gas, etc., and 20 is a diffusion tube for rotating this diffusion tube 11. The driving means, for example, a permanent magnet 12 for non-contact rotation attached to the radiation tube 11 is composed of an electromagnet 13 for applying an external magnetic field and rotating the radiation w11.

Next, the operation will be explained.

When an alternating current voltage is applied to the electromagnet 13, the diffusion tube 11 rotates. At this time, the frequency of the alternating current voltage applied to the electromagnet 13 is adjusted as appropriate so that the gas flow 10 such as the material gas diffused from the diffusion tube 11 does not become turbulent. As a result, the number and ratio of molecules of each of the carrier gas, material gas, organic metal, etc. that reach the substrate 4 in a unit time is
The crystal growth layer is the same over the entire upper surface, and a crystal growth layer having a uniform thickness and a uniform composition ratio over the entire surface can be obtained.

In the above embodiment, an example was explained in which the application was applied to a vertical metal organic vapor phase growth apparatus, but the invention is not limited to this, and it can also be applied to a horizontal metal organic vapor phase growth apparatus shown in FIG. 2 or a barrel shown in FIG. 3. The present invention may also be applied to a metal-organic vapor phase elongation device of the type above, and the same effects as those of the above embodiments can be obtained.

Further, in the above embodiment, two permanent magnets 12 and two Mm stones 13 are provided each in order to rotate the diffusion tube 11 for material gas, etc., but the number may be any number, and as long as there are more than one, the above embodiment It has the same effect as.

〔Effect of the invention〕

As explained above, the present invention provides a driving means for rotating the diffusion tube to which a magnet is attached at one end of the reaction tube or the introduction tube in the growth chamber. This allows for high sealing performance.
It is also possible to achieve the effect of making the thickness and composition of the grown crystal uniform over the entire surface with a simple structure.

[Brief explanation of drawings]

FIG. 1 is a longitudinal cross-sectional view of the reaction tube and surroundings of a vertical metal-organic vapor phase growth apparatus showing one embodiment of the present invention, and FIG. 2 is a horizontal cross-sectional view of a vertical metal-organic vapor phase growth apparatus showing another embodiment of the present invention. FIG. 3 is a vertical cross-sectional view of the area around the reaction tube of a barrel-type organometallic vapor phase growth apparatus showing still another embodiment of the present invention, and FIG. 4 is a vertical cross-sectional view of the area around the reaction tube of the apparatus. Reaction 1 of the type organometallic vapor phase epitaxy apparatus! ! FIG. In the figure, 1 is a reaction tube, 2 is an introduction tube, 3 is an upper sealing part, 4 is a substrate, 5 is a 1-ray, 6 is a carbon susceptor, and 7
is the susceptor support rod, 8 is the lower sealing part, 9 is the exhaust pipe, 10
1 is a gas flow, 11 is a diffusion tube, 12 is a permanent magnet, 13 is an electromagnet, and 2o is a driving means. Note that the same reference numerals in each figure indicate the same or corresponding parts. Figure 1 b Michifun7'I! Futa 7 Susedeta Husband 13: r Shiseki 20 Moving Means 3rd Figure 4 Figure 2 May 22, 2007

Claims (1)

[Claims] A material gas containing a carrier gas and an organic metal vapor are introduced into the reaction tube or growth chamber through an introduction tube while the crystal growth substrate installed in the reaction tube or growth chamber is heated, and the crystal growth substrate is heated. A metal organic vapor phase growth apparatus for growing a crystal layer on a substrate, characterized in that a driving means is provided for rotating a diffusion tube rotatably attached to one end of the introduction tube in the reaction tube or the growth chamber. Metal-organic vapor phase epitaxy equipment.