JP2013171972A - Vapor phase growth apparatus and vapor phase growth method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and a vapor phase growth method which can suppress generation and diffusion of particles.SOLUTION: The vapor phase growth apparatus includes a reactor 2, a rotatable substrate holding member provided in the reactor 2 and holding a processed substrate 3, and a substrate heating mechanism for heating the processed substrate 3 held by the substrate holding member. The vapor phase growth apparatus is provided with a material gas flow path 53, and a purge gas flow path 54. The vapor phase growth apparatus is further provided with a material gas exhaust pipe 15 which is interconnected with the material gas flow path internally and exhausts the material gas. A purge gas exhaust opening 16 interconnected with the purge gas flow path 54 and through which the purge gas passes is provided around the material gas exhaust pipe 15. A cross-sectional area adjustment member 17 for limiting the cross-sectional area of the purge gas exhaust opening 16 is provided at the purge gas exhaust opening 16.

Description

  The present invention relates to a vapor phase growth apparatus and a vapor phase growth method for forming a thin film on a substrate to be processed.

Conventionally, in the manufacture of light emitting diodes, semiconductor lasers, space solar power devices and high-speed devices using compound semiconductor materials, organometallic gases such as trimethylgallium (TMG) or trimethylaluminum (TMA), ammonia (NH ₃ ), MOCVD (Metal Organic Chemical Vapor Deposition) method is used in which a compound semiconductor crystal is grown by introducing a hydrogen compound gas such as phosphine (PH ₃ ) or arsine (AsH ₃ ) into a growth chamber as a source gas contributing to film formation. ing.

  The MOCVD method is a method in which a compound semiconductor crystal is grown on a substrate by introducing the above-described source gas into a growth chamber together with a carrier gas and heating it to cause a gas phase reaction on a predetermined substrate. In the production of a compound semiconductor crystal using the MOCVD method, it is always required to keep the yield and the production capacity high while suppressing the cost while improving the quality of the growing compound semiconductor crystal.

  When producing a thin film, the reaction gas adheres as a by-product to the inner wall and piping of the reaction chamber, as well as to members in the reaction chamber. Of the adhering by-products, the separated by-products or fine by-products become particles. When the particles adhere to the substrate surface, the characteristics of the compound semiconductor deteriorate, and measures are taken to prevent the generation and diffusion of particles.

  For example, Patent Document 1 (Japanese Patent Laid-Open No. 2008-205090) discloses such measures. FIG. 6 shows a cross-sectional structure of the vapor phase growth apparatus described in Patent Document 1.

  An exhaust pipe 123 having a double-pipe structure having an outer pipe 121 connected to the exhaust means on the downstream side and a short inner pipe 122 inserted from an upstream end of the outer pipe 121 to an upstream portion of the outer pipe is provided in the exhaust passage 118. Is provided. One of the passage in the short inner tube 122 of the exhaust pipe 123 and the passage between the short inner tube 122 and the outer tube 121 serves as a source gas exhaust passage 128 that exhausts the source gas flowing on the surface side of the susceptor 113. The other is a purge gas exhaust passage 129 for exhausting the purge gas flowing on the back side of the susceptor 113. Furthermore, the cross-sectional area of the passage with a small gas flow rate is formed smaller than the cross-sectional area of the passage with a high gas flow rate. A passage having a small gas flow rate is a purge gas exhaust passage 129, and a passage having a high gas flow rate is a raw material gas exhaust passage 128.

  By configuring as described above, the gas flowing through the passage with a small gas flow rate is sucked and exhausted by the ejector effect of the gas flowing through the passage with a high gas flow rate. According to Patent Document 1, it is said that even a vapor phase growth apparatus having a self-revolving mechanism with a complicated structure can efficiently discharge a gas flowing in a relatively slow state with a low gas flow rate. . The invention disclosed in Patent Document 1 aims to prevent local gas backflow and the like, thereby improving the film thickness distribution, composition distribution, reproducibility, and the like.

JP 2008-205090 A

  When film formation was performed using the method disclosed in Patent Document 1, the raw material gas leaked to a region other than the raw material gas flow path inside the reaction furnace, and the leaked raw material gas became particles and contaminated the inside of the reaction furnace. In addition, it has been found that it causes particles adhering to the substrate to be processed.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a vapor phase growth apparatus and a vapor phase growth method capable of suppressing the generation and diffusion of particles.

  According to the vapor phase growth apparatus based on the present invention, a reaction furnace, a rotatable substrate holding member provided in the reaction furnace for holding a substrate to be processed, and a substrate holding member provided in the reaction furnace. A substrate heating mechanism for heating the substrate to be processed held by the member. In the vapor phase growth apparatus, a purge gas is provided so as to include a source gas flow path for supplying source gas to the substrate to be processed held by the substrate holding member, and a space in which at least the substrate heating mechanism is accommodated. And a flow path. The vapor phase growth apparatus further includes a source gas exhaust pipe that is connected to the source gas channel and exhausts the source gas. A purge gas exhaust opening through which purge gas exhausted in communication with the purge gas flow path passes is provided around the source gas exhaust pipe. An area adjusting member is provided.

  In the vapor phase growth apparatus, the cross-sectional area adjusting member may be configured to be removable.

  In the vapor phase growth apparatus, the cross-sectional area adjusting member may be constrained by the source gas exhaust pipe.

  In the vapor phase growth apparatus, the cross-sectional area adjusting member may be slidably in contact with the periphery of the purge gas exhaust opening.

  According to the vapor phase growth method based on this invention, a reaction furnace, a rotatable substrate holding member provided in the reaction furnace for holding a substrate to be processed, and a substrate holding member provided in the reaction furnace. A vapor phase growth apparatus provided with a substrate heating mechanism that heats the held substrate to be processed is used. The vapor phase growth apparatus includes a source gas flow path for supplying a source gas to the substrate to be processed held by the substrate holding member, and a purge gas flow provided so as to include at least a space in which the substrate heating mechanism is accommodated. Roads are provided. The vapor phase growth apparatus further includes a source gas exhaust pipe that is connected to the source gas channel and exhausts the source gas. A purge gas exhaust opening through which purge gas exhausted in communication with the purge gas flow path passes is provided around the source gas exhaust pipe. The purge gas exhaust opening is provided with a cross-sectional area adjusting member that limits the opening area of the purge gas exhaust opening. In the vapor phase growth method, the source gas is supplied to the substrate to be processed held by the substrate holding member through the source gas channel and the purge gas is supplied to the purge gas channel while forming a film on the substrate to be processed. including.

  According to the vapor phase growth apparatus and the vapor phase growth method according to the present invention, generation and diffusion of particles can be suppressed.

1 is a longitudinal sectional view showing a structure of a vapor phase growth apparatus according to a first embodiment. It is a perspective view which shows the structure of the cross-sectional area adjustment member of Embodiment 1, (a) is a disassembled perspective view of a raw material gas exhaust pipe and a cross-sectional area adjustment member, (b) was installed in the inside of a reactor. It is a cross-sectional perspective view which shows the structure of the cross-sectional area adjustment member of a state. It is a figure which shows the relationship between the clearance gap of a purge gas exhaust passage, and the cross-sectional area ratio of a purge gas flow path and a raw material gas flow path. It is a perspective view which shows the structure of a different cross-sectional area adjustment member. FIG. 6 is a longitudinal sectional view showing the structure of a vapor phase growth apparatus according to a second embodiment. It is a longitudinal cross-sectional view which shows the structure of the conventional vapor phase growth apparatus.

  Hereinafter, a vapor phase growth apparatus and a vapor phase growth method in each embodiment based on the present invention will be described with reference to the drawings. In each embodiment, the same or corresponding parts are denoted by the same reference numerals, and redundant description will not be repeated.

(Embodiment 1)
Embodiment 1 of the present invention will be described below with reference to the drawings.

  FIG. 1 shows a longitudinal sectional view of a MOCVD (Metal Organic Chemical Vapor Deposition) apparatus as a vapor phase growth apparatus of the first embodiment.

  As shown in FIG. 1, the MOCVD apparatus 10 of the present embodiment has a reaction furnace 2 having a reaction chamber 1 as a growth chamber that isolates the inside from the atmosphere side and maintains an airtight state. And a susceptor 4 on which the substrate 3 to be processed is placed. The substrate 3 to be processed may be placed directly on the susceptor 4 or may be placed on the susceptor 4 with a quartz spacer or the like placed thereon. The susceptor alone or a combination of a susceptor and a quartz spacer constitutes a substrate holding member.

  The reaction furnace 2 is provided with a reaction furnace top plate 20. An O-ring 51 is provided between the main body of the reaction furnace 2 and the reaction furnace top plate 20. By the O-ring 51, the main body of the reaction furnace 2 and the reaction furnace top plate 20 are kept airtight. A raw material gas supply pipe 21 is disposed on the reaction furnace top plate 20.

  A substrate heater 6 is provided below the susceptor 4. Although not shown, a multi-zone heater capable of individually heating a plurality of areas can be used as the substrate heater 6. A reflector 52 that reflects the heat of the substrate heater 6 is provided so as to cover the lower and side surfaces of the substrate heater 6.

  The susceptor 4 is supported by a rotating shaft 5 and is rotatable. In order to prevent the reaction product from adhering to the side surface of the susceptor 4 or the heater chamber housing the substrate heater 6 and the formation of miscellaneous crystals, the reaction chamber 1 and the heater chamber are separated by the flow path component 55. It is partitioned.

  An exhaust passage 11 is provided on the downstream side of the reaction chamber 1 inside the reaction furnace 2. An exhaust buffer section 12 having a space sufficiently larger than the source gas flow path 53 on the susceptor 4 is formed downstream of the exhaust passage 11. A plurality of exhaust ports 13 are provided in the exhaust buffer unit 12.

  The reactor bottom plate 7 is provided with a reactor side exhaust port 14. A source gas exhaust pipe 15 connecting the exhaust buffer unit 12 and the reactor side exhaust port 14 is provided with the downstream end thereof inserted into the reactor side exhaust port 14. A purge gas exhaust opening 16 is provided in the gap between the outer peripheral side of the source gas exhaust pipe 15 and the inner peripheral surface of the reaction furnace side exhaust port 14.

  A purge gas flow path 54 is provided so as to include at least a space for accommodating the substrate heater 6 inside the reaction furnace 2. The purge gas channel 54 is provided between the lower surface of the susceptor 4 and the upper surface of the substrate heater 6, between the reflector 52 and the substrate heater 6, and between the substrate heater 6 and the purge gas supply pipes 18 and 19. Is formed.

  The purge gas prevents the raw material gas from leaking out between the susceptor 4 and the flow path component 55 and corroding the substrate heater 6 and the like. Accordingly, the purge gas is always supplied from the purge gas supply pipes 18 and 19 to the purge gas channel 54 while the source gas is being supplied.

  When a thin film is formed on the main surface of the substrate 3 to be processed by the MOCVD apparatus 10, a source gas is introduced from the source gas supply pipe 21 into the reaction chamber 1. At this time, the substrate to be processed 3 is heated by the substrate heater 6 through the susceptor 4. By heating the substrate 3 to be processed, a film forming chemical reaction on the substrate 3 to be processed is promoted, and a thin film is formed on the upper surface of the substrate 3 to be processed. The source gas flowing along the upper surface of the substrate 3 to be processed is finally discharged in a state of being mixed with the purge gas from the reactor side exhaust port 14.

  Next, the structure of the cross-sectional area adjusting member 17 will be described. The cross-sectional area adjusting member 17 is installed so as to limit the opening area of the purge gas exhaust opening 16 through which the purge gas to be exhausted passes.

  FIG. 2 is a perspective view of the cross-sectional area adjusting member. FIG. 2A is an exploded perspective view of the source gas exhaust pipe 15 and the cross-sectional area adjusting member 17, and FIG. 2B is a structure of the cross-sectional area adjusting member 17 in a state installed inside the reaction furnace 2. FIG.

  The cross-sectional area adjustment member 17 exists independently so that it can be removed. The cross-sectional area adjusting member 17 is configured such that the source gas exhaust pipe 15 can be inserted into the inner diameter portion thereof. The outer diameter D of the source gas exhaust pipe 15 and the inner diameter d of the cross-sectional area adjusting member 17 are substantially the same. Accordingly, the position of the cross-sectional area adjusting member 17 is restricted by the source gas exhaust pipe 15. In the case where the cross-sectional area adjusting member 17 is positioned by other means, it is possible to adopt a configuration in which the position is not restricted by the source gas exhaust pipe 15.

  The cross-sectional area adjusting member 17 is provided with a purge gas flow path opening 22. As shown in FIG. 2B, in the state where the cross-sectional area adjusting member 17 is installed inside the reaction furnace 2, a part of the purge gas exhaust opening 16 is closed to limit the opening area. The purge gas is exhausted through the purge gas flow path opening 22.

  Usually, in the MOCVD method for growing a compound semiconductor crystal, the flow rate of the source gas is higher than the flow rate of the purge gas. In the vapor phase growth phase apparatus disclosed in Patent Document 1, the cross-sectional area of the purge gas exhaust passage is configured to be smaller than the cross-sectional area of the source gas exhaust passage. Here, the problem of the conventional vapor phase growth apparatus will be described in more detail.

  According to the example of Patent Document 1, since the raw material gas flow rate is 200 slm and the purge gas flow rate is 20 slm, the flow rate ratio is 10: 1. In this case, when the cross-sectional area ratio between the source gas exhaust passage and the purge gas exhaust passage is 2: 1, the flow rate ratio is 5: 1.

  In Patent Document 1, an ejector effect is generated due to a difference in flow velocity between the raw material gas and the purge gas, and the purge gas is sucked in as the raw material gas is exhausted by the ejector effect. The suction of the purge gas by the ejector effect of the source gas in this way leads to a decrease in the pressure of the purge gas flow path.

  There is inevitably a gap between the source gas flow path and the purge gas flow path for communicating the two. For this reason, when the pressure in the purge gas channel decreases, there is a problem that the source gas leaks from the source gas channel to the purge gas channel through the gap.

  When the raw material gas leaks, a by-product accumulates at an unexpected location, for example, the inner wall surface of the reaction furnace. Of the adhering by-products, the separated by-products or fine by-products become particles and adhere to the substrate to be processed as contamination. Such contamination causes deterioration of the film quality of the substrate to be processed, a decrease in yield, a decrease in apparatus operation rate due to maintenance, and the like.

  Actually, when the film was formed using the method disclosed in Patent Document 1, the raw material gas leaked to a region other than the raw material gas flow path inside the reaction furnace to become particles, and the contamination inside the reaction furnace and treatment It has been found that this causes the particles to adhere to the substrate.

  In order to avoid such an adverse effect of the ejector effect, it is preferable that the purge gas is not sucked by the ejector effect. For this purpose, it is necessary to make the difference in flow rate between the source gas and the purge gas during exhaust as small as possible. In order to reduce the flow rate difference, it is preferable to set the cross-sectional area of the purge gas exhaust passage to be sufficiently smaller than the cross-sectional area of the raw material gas exhaust passage so as to correspond to the flow rate ratio of the raw material gas and the purge gas.

  Here, in the case of the vapor phase growth apparatus described in Patent Document 1, in order to change the cross-sectional area ratio, the outer diameter of the short inner tube 122 in FIG. 6 is configured larger, or the inner diameter of the outer tube 121 is decreased. Will be configured. In FIG. 3, the clearance of the purge gas exhaust passage 129 ((the inner diameter of the outer pipe 121−the outer diameter of the short inner pipe 122) / 2) when 50A piping (piping with an outer diameter of 60.5 mm) is used for the outer pipe 121. L) and the cross-sectional area ratio of the purge gas exhaust passage and the raw material gas exhaust passage are shown.

  For example, when the cross-sectional area ratio is increased, there is no problem because the gap is widened. However, in order to reduce the cross-sectional area ratio to 0.2 (source gas exhaust passage: purge gas exhaust passage = 5: 1), the gap is very small, about 2 mm. In the case of such a small gap, deformation due to contact during thermal expansion may occur. Therefore, it has been difficult to reduce the cross-sectional area ratio in the conventional structure.

  In the present embodiment, even when the area of the purge gas exhaust opening 16 is sufficiently large to secure a gap, the opening area of the purge gas exhaust opening 16 can be freely set because the cross-sectional area adjusting member 17 is provided. Can be limited. Thereby, a small cross-sectional area ratio as described above can be obtained.

  In the cross-sectional area adjusting member 17 shown in FIG. 2, the purge gas flow path opening 22 is formed along the surface of the source gas exhaust pipe 15 passing through the center. As shown in FIG. 4, a plurality of purge gas channel openings 22 may be formed by being arranged concentrically with the center of the source gas exhaust pipe 15 that penetrates. In FIG. 4, each purge gas channel opening 22 is a circular hole.

  The cross-sectional area adjusting member 17 is an individual part and is configured to be removable. Therefore, the cross-sectional area adjusting member 17 can be exchanged according to the purge gas flow rate or the degree of attachment of by-products inside the reactor. This makes it possible to limit the area of the purge gas exhaust opening 16 easily and inexpensively.

  In addition, the cross-sectional area adjusting member 17 is placed in the state where the raw material gas exhaust pipe 15 is inserted and restrained in the horizontal direction, but is placed on the reactor bottom plate 7 by its own weight. In other words, the cross-sectional area adjusting member 17 is slidably mounted on the reactor bottom plate 7 constituting the periphery of the purge gas exhaust opening 16 while being restrained in position by the source gas exhaust pipe 15.

  In general, in a MOCVD apparatus, the film forming temperature is as high as 700 to 1200 ° C., so the material gas temperature is inevitably high. The temperature of the portion where the source gas that has passed over the susceptor 4 flows rises and thermally expands. Therefore, the positions of the plurality of exhaust ports 13 provided in the exhaust buffer unit 12 are also shifted outward. On the other hand, the reactor 2 and the reactor bottom plate 7 are water-cooled and their dimensions hardly change.

  If the position of the exhaust port 13 is shifted, the position of the reactor side exhaust port 14 and the relative position of the source gas exhaust pipe 15 are shifted. Even in this case, the area of the purge gas exhaust opening 16 does not change, but the reactor side exhaust port 14 and the source gas exhaust pipe 15 are not positioned concentrically. As a result, in the conventional structure, a wide portion and a narrow portion are generated in the opening, and an imbalance in the purge gas exhaust flow rate occurs. As a result, the raw material gas leaks and becomes particles, which may cause contamination inside the reactor and cause the particles to adhere to the substrate to be processed.

  In the present embodiment, first, a sufficiently wide gap between the reactor side exhaust port 14 and the source gas exhaust pipe 15 can be secured. Further, even when the position of the reaction furnace side exhaust port 14 and the relative position of the source gas exhaust pipe 15 are deviated as described above, the cross-sectional area adjusting member 17 installed on the purge gas exhaust opening 16 is provided with a source material. The position of the gas exhaust pipe 15 is restricted, and the gas exhaust pipe 15 moves together.

  Therefore, the cross-sectional area of the purge gas flow path opening 22 formed in the cross-sectional area adjusting member 17 does not change, and moves with the source gas exhaust pipe 15, so that the source gas exhaust pipe 15 and the purge gas flow The relative position with respect to the road opening 22 does not change.

  Accordingly, it is possible to ensure a stable and constant exhaust path for the purge gas without being affected by the temperature change for film formation. As a result, it is possible to prevent the source gas from leaking and becoming particles, causing contamination inside the reaction furnace and causing the particles to adhere to the substrate to be processed.

  Here, generally, when a compound semiconductor crystal is grown using a vapor phase growth apparatus, the pressure and flow rate conditions in the reactor may be changed. In this case, when the pressure changes, the ratio of the purge gas flow rate to the raw material gas flow rate may change. As a result, in the conventional vapor phase growth apparatus, the initially assumed balance is lost, and the raw material gas sometimes leaks into a region other than the raw material gas flow path inside the reaction furnace to become particles.

  Further, when the pressure in the reaction furnace is changed from the reduced pressure state to a higher pressure, the pressure is adjusted by supplying the raw material gas and the purge gas. At this time, in the conventional vapor phase growth apparatus, the particulate by-product accumulated in the exhaust pipe may flow back to the purge gas flow path through the purge gas exhaust opening. In this case, particles may accumulate inside the reaction furnace and adhere to the substrate to be processed as contamination.

  According to the configuration of the present embodiment, even under the above conditions, the opening area is limited by the cross-sectional area adjusting member 17 provided in the purge gas exhaust opening 16, and therefore, it was deposited in the exhaust pipe. Particulate by-products are difficult to flow back into the purge gas flow path. Thereby, the above problems can be avoided.

  By using the vapor phase growth apparatus of this embodiment, a vapor phase growth method including the following steps can be performed.

  First, as a first step, a cross-sectional area adjusting member 17 having an appropriate size is arranged inside the reaction furnace 2. Thereby, the cross-sectional area ratio of the source gas flow path and the purge gas flow path is appropriately adjusted by limiting the opening area of the purge gas exhaust opening 16.

  Next, the substrate 3 to be processed is placed on the susceptor 4 and the source gas and the purge gas are supplied to the source gas supply pipe 21 and the purge gas supply pipes 18 and 19 to form a thin film on the substrate to be processed. At this time, the substrate to be processed 3 is heated to an appropriate temperature by the substrate heater 6.

  According to such a vapor phase growth method, the occurrence of the ejector effect can be prevented by maintaining an appropriate cross-sectional area ratio between the source gas exhaust passage and the purge gas exhaust passage. Thereby, generation | occurrence | production and spreading | diffusion of a particle by the pressure of a purge gas flow path falling can be suppressed.

(Embodiment 2)
FIG. 5 shows a longitudinal sectional view of an MOCVD apparatus as a vapor phase growth apparatus according to the second embodiment. In the present embodiment, the source gas exhaust pipe 15 is set to a length that is not inserted into the reactor side exhaust port 14. The source gas exhaust pipe 15 is inserted into the cross-sectional area adjusting member 17, but the downstream end of the source gas exhaust pipe 15 is located within the thickness of the cross-sectional area adjusting member 17.

  Even in such a configuration, the purge gas flow path opening 22 can be defined by the inner peripheral surface of the cross-sectional area adjusting member 17. Therefore, the lower end of the source gas exhaust pipe 15 is not necessarily inserted into the reaction furnace side exhaust port 14.

  As described above, according to these embodiments, the generation and diffusion of particles are suppressed, the film quality and uniformity of the substrate to be processed are reduced, the yield is improved, and the apparatus operating rate is not lowered due to maintenance. It is possible to provide a vapor phase growth apparatus and a vapor phase growth method that can be performed.

  In the present invention, it goes without saying that the structure of the reaction furnace and other members constituting the MOCVD apparatus is not limited to the structure shown in FIGS.

  Although the embodiments of the present invention have been described above, the embodiments disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  1 reaction chamber, 2 reaction furnace, 3 substrate to be processed, 4 susceptor, 5 rotating shaft, 6 substrate heater, 7 reaction furnace bottom plate, 10 MOCVD apparatus, 11 exhaust passage, 12 exhaust buffer section, 13 exhaust port, 14 reactor Side exhaust port, 15 source gas exhaust pipe, 16 purge gas exhaust opening, 17 cross-sectional area adjusting member, 18, 19 purge gas supply pipe, 20 reactor top plate, 21 source gas supply pipe, 22 purge gas flow path opening, 51 O Ring, 52 reflector, 53 source gas flow path, 54 purge gas flow path, 55 flow path component.

Claims (5)

A reaction furnace, a rotatable substrate holding member provided in the reaction furnace for holding a substrate to be processed, and a substrate heating mechanism for heating the substrate to be processed provided in the reaction furnace and held by the substrate holding member; With
A gas provided with a source gas channel for supplying source gas to the substrate to be processed held by the substrate holding member, and a purge gas channel provided so as to include at least a space in which the substrate heating mechanism is accommodated. A phase growth apparatus,
A source gas exhaust pipe for exhausting the source gas further communicating with the source gas flow path,
A purge gas exhaust opening is provided around the source gas exhaust pipe and communicates with the purge gas flow path and through which the purge gas to be exhausted passes. The purge gas exhaust opening restricts the opening area of the purge gas exhaust opening. A vapor phase growth apparatus provided with a cross-sectional area adjusting member.   The vapor phase growth apparatus according to claim 1, wherein the cross-sectional area adjusting member is configured to be removable.   The vapor phase growth apparatus according to claim 1 or 2, wherein the cross-sectional area adjusting member is constrained by the source gas exhaust pipe.   The vapor phase growth apparatus according to claim 3, wherein the cross-sectional area adjusting member is slidably in contact with the periphery of the purge gas exhaust opening. A reaction furnace, a rotatable substrate holding member provided in the reaction furnace for holding a substrate to be processed, and a substrate heating mechanism for heating the substrate to be processed provided in the reaction furnace and held by the substrate holding member; With
A gas provided with a source gas channel for supplying source gas to the substrate to be processed held by the substrate holding member, and a purge gas channel provided so as to include at least a space in which the substrate heating mechanism is accommodated. A vapor phase growth method using a phase growth apparatus,
The vapor phase growth apparatus further includes a source gas exhaust pipe that communicates with the source gas flow path and exhausts the source gas, and the periphery of the source gas exhaust pipe is connected to the purge gas flow path and is exhausted. A purge gas exhaust opening through which the purge gas to be passed is provided, and the purge gas exhaust opening is provided with a cross-sectional area adjusting member for limiting an opening area of the purge gas exhaust opening,
Vapor phase growth, including a step of supplying a source gas to the substrate to be processed held by the substrate holding member through the source gas channel to form a film on the substrate to be processed and simultaneously supplying a purge gas to the purge gas channel. Method.

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