JP2004165445A - Semiconductor manufacturing arrangement - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing arrangement capable of growing an epitaxial layer of good quality on a substrate by controlling a spatial temperature distribution of the semiconductor manufacturing arrangement for a lower growth temperature on the substrate. <P>SOLUTION: A substrate 8 comprises a heating part 15. A first gas 2 and a second gas 3 are supplied to the substrate 8 to grow an epitaxial layer of a compound semiconductor on the substrate 8. A heating strip 1 of the first gas 2 is provided between a guide-in part 5 of the first gas and the substrate 8. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus for growing and synthesizing a compound semiconductor, and more particularly to a semiconductor manufacturing apparatus suitable for manufacturing a group III nitride semiconductor vapor phase epitaxial growth wafer.
[0002]
[Prior art]
Group III nitride semiconductors, especially gallium nitride, are materials that have applications as light emitting device materials from green to blue and ultraviolet, and are provided in the form of substrates (wafers), epitaxial growth wafers for substrates, and epitaxial wafers for light emitting devices. and so on.
[0003]
An epitaxial growth wafer for a substrate is mainly formed by epitaxially growing a group III nitride on a non-group III nitride substrate such as sapphire, silicon, and lithium carbonate, and using this as a substrate. If necessary, the thickness of the epitaxy layer is reduced. Thicken and remove the underlying substrate to obtain a desired group III nitride.
The epitaxial growth wafer for a substrate is desirably manufactured at low cost, and is preferably a halide / hydride vapor phase epitaxy (HVPE, hereinafter referred to as a halide vapor) method using a Group 3 halide (specifically, a Group 3 chloride) as a Group 3 raw material. Phase growth is often used. This method uses an ammonia gas as a nitrogen source and a halide as a Group 3 source. The advantage thereof is that the film formation rate can be increased, which is advantageous in terms of throughput and cost.
[0004]
An epitaxial wafer for a light-emitting device has a layer structure required for a light-emitting device formed by epitaxy, and requires fine and uniform film formation such as a Bragg reflection layer and a quantum well layer structure. A metal organic chemical vapor deposition method (MOCVD method) using an organic metal as a group 3 raw material is used.
As a vapor phase epitaxial growth technique of a group III nitride semiconductor, a halide vapor phase epitaxy method and an organometallic vapor phase epitaxy method have been around since 1970. In addition to these methods, there is also a molecular beam epitaxy method (MBE method).
[0005]
As a technique common to the conventional halide vapor deposition method and metal organic chemical vapor deposition method, a raw material gas is supplied to a substrate from a direction horizontal or inclined to the substrate, and a pressing gas containing no raw material is supplied from a direction perpendicular to the substrate. There is one that improves the operation of epitaxial growth on a substrate by supplying it to the substrate (see Patent Document 1).
As a technique related to the metal organic chemical vapor deposition method, as a method of supplying the ammonia gas and the group 3 source gas to the substrate, by avoiding the mixing of the ammonia gas and the group 3 source gas before reaching the substrate, the gas in the gas phase Some suppress the pre-reaction (see Patent Documents 2 and 3).
[0006]
[Patent Document 1]
Japanese Patent No. 2628404 [Patent Document 2]
Japanese Patent Application Laid-Open No. 08-091989 [Patent Document 3]
JP 2001-506803 A
[Problems to be solved by the invention]
In the vapor phase growth of Group III nitrides by the metal organic vapor phase epitaxy, there is a problem that surface elimination of nitrogen from the crystal surface occurs, and the quality of the crystal deteriorates.
It is thought that nitrogen desorption is caused by insufficient partial pressure of the nitrogen raw material, and it is necessary to supply an excessive amount of ammonia gas to make up for this. The feed ratio of ammonia to the Group 3 raw material (Group 5 / Group 3 ratio) can be as high as thousands. As a countermeasure against nitrogen desorption on the surface, lowering the growth temperature can be mentioned, but when the growth temperature is lowered, ammonia is not sufficiently decomposed.
[0008]
The halide vapor phase epitaxy also has a problem of surface desorption of nitrogen as in the case of the metal organic vapor phase epitaxy.
Further, the halide vapor phase epitaxy involves a problem of growth of cubic gallium nitride and a mixed crystal of cubic gallium nitride and another group III nitride. In the metalorganic vapor phase epitaxy, there have been many reports of the growth of cubic gallium nitride in recent years. In the halide vapor phase epitaxy, there are many reports of the growth of hexagonal crystals. In a device using a cleavage plane of a crystal such as a semiconductor laser, a cubic material is more advantageous than a hexagonal material. Therefore, it is desired to complete a vapor phase growth method capable of manufacturing a cubic gallium nitride substrate. In order to solve this problem in the halide vapor deposition method, it is necessary to develop a method for lowering the growth temperature further than the conventional technique.
[0009]
The apparatus configuration in the halide vapor phase epitaxy method is as follows. A reaction tube is placed in a heating furnace, a substrate is placed in the reaction tube, and a group III halide and an ammonia gas are supplied to the substrate as raw material gases to form a group III nitride on the substrate. The material is epitaxially grown. It is known that, even in the halide vapor phase epitaxy method, a pre-reaction occurs when a Group 3 material and a Group 5 material are mixed before reaching the substrate. It is a target. Group III halides are often chlorides or iodides. For example, gallium chloride, aluminum chloride, gallium iodide, and aluminum iodide are mentioned. In most cases, the material of the reaction tube is quartz, and there are examples of the reaction tube made of other ceramics.
[0010]
The temperature distribution of the reactor in the halide vapor deposition method is substantially determined by the spatial temperature controllability of the heating furnace. Specifically, it is determined by the number of divisions of the heating element, the size of the zone, the heat capacity, the presence or absence of forced cooling, and the like. Since the zone of the heating element is divided on a plane perpendicular to the direction of the flow of the source gas, increasing the number of substrates to be processed at one time requires increasing the cross-sectional area of the flow path of the reactor. Become. As the cross-sectional area of the reactor increases, the supply amounts of the raw material gas and the carrier gas increase, and the cross-sectional area of the heating furnace also increases. That is, the conventional halide vapor deposition method has a problem that the number of substrates to be processed cannot be increased to a certain degree or more.
[0011]
The present invention has been made to solve the above-mentioned problems in a semiconductor manufacturing apparatus, and can control a spatial temperature distribution, can lower a growth temperature on a substrate, and can use a halide vapor deposition method and an organometallic vapor phase method. It is an object of the present invention to provide a semiconductor manufacturing apparatus which can carry out any of the growth methods and can reduce the supply ratio of ammonia and a group 3 raw material (group 5 / group 3 ratio) in vapor phase epitaxial growth of a group 3 nitride semiconductor. Aim. It is another object of the present invention to provide a semiconductor manufacturing apparatus capable of increasing the area of an epitaxial growth substrate even in a halide vapor phase epitaxy method.
[0012]
[Means for Solving the Problems]
According to the present invention, in a semiconductor manufacturing apparatus having a substrate heating means and supplying a first gas and a second gas to a substrate to grow an epitaxial layer of a compound semiconductor on the substrate, the first gas introduction unit and the substrate The above problem is solved by providing a heating zone for the first gas.
[0013]
Since the semiconductor manufacturing apparatus includes the first gas heating zone between the first gas introduction unit and the substrate, the temperature of the substrate and the vicinity of the substrate can be positively controlled. In addition, it is possible to set a temperature gradient that could not be achieved only by heating from the substrate heating source, and it is possible to control the spatial temperature distribution.
The first gas is an ammonia gas or an ammonia gas diluted with nitrogen or a nitrogen compound gas, and the second gas is a Group 3 source gas using a Group 3 organometallic compound or a Group 3 halogen compound as a raw material. Thus, the vapor phase epitaxial growth of the group III nitride semiconductor can be performed. At this time, since ammonia is decomposed in the heating zone, the growth temperature on the substrate can be lowered, and in the vapor phase growth of Group III nitride, surface elimination of nitrogen from the crystal surface is prevented to improve the quality of the crystal. It is possible to reduce the supply ratio of the ammonia and the Group 3 raw material (Group 5 / Group 3 ratio).
[0014]
By lowering the growth temperature, the production of cubic gallium nitride substrates in the halide vapor phase epitaxy can be expected. Further, the number of processed substrates can be increased.
It is preferable that the introduction part of the second gas is arranged at a position closer to the substrate surface than the introduction part of the first gas.
The first gas inlet and the second gas inlet are spatially separated from each other, and a third gas inlet is provided between the first gas inlet and the second gas inlet. A third gas, which is neither a gas nor a nitrogen compound gas, is introduced as a curtain gas to separate the first gas (ammonia gas) from the second gas (group 3 source gas). And the second reaction of the second gas can be suppressed.
[0015]
By providing a catalyst in the heating zone, decomposition of ammonia is promoted. As a catalyst, nickel supported on a silicon nitride carrier is preferable.
The temperature of the heating zone may be maintained higher than the temperature of the substrate, and a temperature gradient may be provided in the space between the heating zone and the substrate. Specifically, the heating zone is preferably brought close to the substrate to such an extent that the flow of the Group 3 source gas and the flow of the curtain gas are not hindered. You just need to add
[0016]
If a cooling zone is provided between the introduction part of the first gas and the heating zone, it is possible to prevent the first gas from being heated by the heat radiation of the heating zone before reaching the heating zone.
When the substrate is placed on a circular removable susceptor, the heating zone is placed facing the susceptor, and the substrate rotates and revolves with the susceptor, the flow of the raw material gas and the flow of the curtain gas become smooth. Can be.
[0017]
The distance between the heating zone and the susceptor is preferably not more than の of the radius of the susceptor. In addition, it is desirable that it is 76 mm or less regardless of the size of the susceptor.
The susceptor may be approximately cylindrical, the substrate may be disposed on the inner wall of the susceptor, and the heating zone may be disposed inside the susceptor as a generally cylindrical shape having a smaller diameter than the susceptor, so that the susceptor and the heating zone can be freely rotated.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a configuration diagram of a main part of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
This semiconductor manufacturing apparatus includes a susceptor 9 for mounting a substrate 8, a heating unit 15 for heating the susceptor 9, a heating zone 1 arranged opposite to the susceptor 9, and a heating zone 1. The apparatus includes an introduction section 5 for introducing one gas, an introduction section 6 for introducing a second gas, and an introduction section 7 for introducing a third gas. A cooling zone 10 is provided between the first gas inlet 5 and the heating zone 1.
[0019]
In the case where a group III nitride semiconductor is manufactured by this semiconductor manufacturing apparatus, the first gas 2 is a gas for supplying a nitrogen raw material, and either an ammonia gas diluted with nitrogen or an undiluted ammonia gas can be used. The source gas supply device is set.
The second gas 3 is a gas for supplying a Group 3 raw material. The second gas 3 is a Group 3 halide in the halide vapor phase growth method and an organic metal in the metal organic vapor phase growth method.
[0020]
As the halide, chloride, specifically, gallium chloride, aluminum chloride, or indium chloride is used.
As the organic metal, trimethylgallium, trimethylaluminum, and trimethylindium are used. Since the dopant for forming the P-type semiconductor is also an organic metal, it is supplied together with the second gas 6. Specifically, biscyclopentadienyl magnesium is used. Hydrogen or a mixed gas of hydrogen and nitrogen is used as the carrier gas.
[0021]
Hydrogen is used for the third gas 4. A dopant for forming an N-type semiconductor is supplied together with the third gas 4. Specifically, disilane is used.
The reaction vessel is a chamber made of stainless steel (SUS316L), the inside of which can be evacuated and withstands an internal pressure of 0.5 MPa. This reaction vessel has a plurality of ports. Specifically, a port for connecting a rotation introduction terminal for introducing rotation to the susceptor 9, a port for connecting a current introduction terminal for supplying current to the susceptor 9 and the heating element of the heating zone 1, A connection port for the pair 12, a port for connecting a probe of a vacuum / pressure measuring instrument, a port for connecting a viewing window for observing the inside, a port for a process monitor, and the like are provided.
[0022]
A plurality of gas connection ports for introducing the first gas 2, the second gas 3, and the third gas 4 are provided as needed. Further, an exhaust port for exhausting the exhaust gas 18 after the reaction on the substrate 8 is provided, and a pressure control valve for controlling the pressure of the reaction vessel is provided in the exhaust pipe.
A vacuum exhaust port connected to a turbo-molecular pump is provided in addition to the exhaust port, so that the device can be easily maintained and managed.
[0023]
Since the temperature of the susceptor 9 and the heating zone 1 becomes as high as about 1000 ° C., the reaction vessel has a cooling jacket for protecting itself. Excessive cooling of the inner wall may cause the generation of powder and particles.Therefore, a structure that pays attention to the temperature of the inner wall of the reaction vessel, such as installing a stainless steel plate slightly apart from the inner wall as a liner, is provided. Have been. The liner also serves to protect the inner surface of the reaction vessel from the products of the reaction.
[0024]
The susceptor 9 is made of silicon carbide and has a pocket for loading the substrate 8. The susceptor 9 can be attached to and detached from a receiving table 16 rotatably supported by a rotating shaft 17. It can be rotated together with the cradle 16. The substrate 8 is heated by the heating unit 15 together with the susceptor 9 while being loaded on the susceptor 9.
The heating temperature varies depending on the material to be epitaxially grown, but is generally about 1100 degrees.
[0025]
The surface of the susceptor 9 is upward and horizontal, but may be downward or oblique.
The susceptor 9 is detachable from the receiving table 16 and functions as a substrate carrier for transport.
In order to uniformly and appropriately supply the first gas 2 such as ammonia to the entire surface of the substrate 8, the first gas 2 is sent to the first gas introduction unit 5 in a direction substantially perpendicular to the surface of the substrate 8. It has a structure. Specifically, it has a structure in which rectifying means such as a net, a plate having a hole, a plate using a porous material, a nozzle, and a partition plate are combined.
[0026]
The second gas inlet 6 is spatially separated from the first gas inlet 5 and is located closer to the substrate surface 8 than the first gas inlet 5. Specifically, the second gas 3 such as a group 3 source gas is supplied to the susceptor 9 from a horizontal or slightly obliquely upper position on the rotating shaft 17 of the susceptor 9 at substantially the same height as the surface of the susceptor 9. You.
[0027]
The second gas introduction unit 5 also has a structure for uniformly and appropriately supplying the second gas 3 to the entire surface of the substrate 8. Specifically, it has a structure in which rectifying means such as a net, a plate having a hole, a plate using a porous material, a nozzle, and a partition plate are combined.
In the case of the metalorganic vapor phase epitaxy operation, the second gas introduction unit 6 performs cooling, measures the temperature, and controls the temperature to be equal to or lower than the decomposition temperature of the Group 3 raw material and the dopant supplied together with the Group 3 raw material. Cooling is performed by circulating a coolant 11 such as water or fluorocarbon, and care is taken so that the raw material does not condense due to excessive cooling.
[0028]
In the case of the vapor phase growth operation of the halide, the second gas introduction section 6 needs to be at a temperature of about several hundred degrees at which the group III chloride does not condense. Perform measurement. The outer jacket of the gas flow section may be covered with a cooled jacket.
The structure which can be operated simultaneously or by switching between the halide vapor deposition and the organometallic vapor deposition can be employed.
[0029]
The third gas inlet 7 is disposed between the first gas inlet 5 and the second gas inlet 6. The third gas 4 supplied from the third gas inlet 7 is the first gas supplied from the first gas inlet 5 and the second gas inlet 5 which are spatially separated from each other. The curtain gas separates the second gas 3 from the second gas 3. The third gas 4 is preferably a hydrogen gas other than a nitrogen gas or a nitrogen compound gas.
[0030]
When the third gas 4 is a virgin gas containing no source gas, the third gas introduction unit 7 is suitable for arranging the probe light emission window 13 and the light receiving window 14 of the process monitor.
The heating zone 1 is arranged in a space between the first gas inlet 5 and the susceptor 9 so as to face the susceptor 9. The size of the heating zone 1 is substantially the same as that of the susceptor 9 and includes a heater using tungsten as a heating element. If heating by a lamp is possible, a lamp may be used.
[0031]
The distance between the heating zone 1 and the susceptor 9 is preferably not more than の of the radius of the susceptor. In addition, it is desirable that it is 76 mm or less regardless of the size of the susceptor.
The heating temperature of the heating zone 1 is about the same as or higher than that of the susceptor 9 and varies depending on the material to be epitaxially grown. However, the heating zone 1 can be heated up to about 1200 degrees.
[0032]
In order to promote the decomposition of ammonia, a catalyst supporting silicon nitride ceramics and supporting nickel is also provided.
The cooling zone 10 is disposed between the first gas inlet 5 and the heating zone 1. The cooling zone 10 arranges cooling pipes through which the cooling refrigerant flows in an orderly manner, shields the first gas introduction portion 5 so as not to heat the heating zone, and prevents the first gas 2 from reaching the heating zone 1 before the first gas 2 reaches the heating zone 1. Prevents heating by heat radiation.
[0033]
The arrangement of the cooling pipes in the cooling zone 10 and the heating elements in the heating zone 1 is set such that a gap through which the first gas 2 passes is formed. This gap may or may not be a structure providing pressure loss.
Since the semiconductor manufacturing apparatus includes the heating zone 1 for the first gas 2 between the introduction portion 5 for the first gas and the substrate 8, the temperature of the substrate 8 and the temperature in the vicinity of the substrate 8 can be positively controlled. In addition, it is possible to set a temperature gradient that cannot be achieved only by heating the substrate 8 from the heating unit 15.
[0034]
When performing vapor phase epitaxial growth of a group III nitride semiconductor, ammonia is decomposed in the heating zone 1, so that the growth temperature on the substrate 8 can be lowered and nitrogen from the crystal surface can be reduced in the vapor phase growth of the group III nitride semiconductor. Can be prevented from desorbing on the surface, the quality of the crystal can be improved, and the supply ratio of ammonia to the group 3 raw material (group 5 / group 3 ratio) can be reduced.
[0035]
By lowering the growth temperature, it becomes possible to manufacture the cubic gallium nitride substrate 8 in the halide vapor phase epitaxy. Further, the number of processed substrates can be increased.
The first gas introduction part 5 and the second gas introduction part 6 are spatially separated from each other, and a third gas introduction part is provided at an intermediate position between the first gas introduction part 5 and the second gas introduction part 6. 7, the third gas 4 is introduced as a curtain gas, and the first gas 2 (ammonia gas) is separated from the second gas 3 (a group 3 source gas) by the first gas 2 before reaching the substrate 8. The pre-reaction between 2 and the second gas 3 can be suppressed.
[0036]
By providing the heating zone 1 with a catalyst, the decomposition of ammonia is promoted.
If a cooling zone is provided between the introduction part of the first gas and the heating zone, it is possible to prevent the first gas from being heated by the heat radiation of the heating zone before reaching the heating zone.
By rotating the substrate 8 and revolving with the susceptor 9, the flow of the raw material gas and the flow of the curtain gas can be made smooth.
[0037]
This semiconductor manufacturing apparatus can of course be applied to various materials that have been difficult to manufacture up to now, in addition to the group III nitride semiconductor.
FIG. 2 is a configuration diagram of a main part of a semiconductor manufacturing apparatus according to another embodiment of the present invention.
In this semiconductor manufacturing apparatus, a substrate 8 is disposed on a planar susceptor 9, and a heating zone 1 is disposed at a position facing the substrate 8. The shape of the surface of the heating zone 1 facing the susceptor 9 may be adjusted to the shape of the surface of the susceptor 9. The second gas introduction part 6 and the third gas introduction part 7 are arranged at positions deviating from the heating area at a location corresponding to the gap between the susceptor 9 and the heating zone 1.
[0038]
The shape of the surface of the susceptor 9 may be flat or curved, may be long in the left-right direction in the drawing, or may be long in the direction perpendicular to the paper surface.
For example, the susceptor 9 has a substantially cylindrical shape, the substrate 8 is disposed on the inner wall of the susceptor 9, a heating unit 15 is provided so that the susceptor 9 can be heated from the outside or directly, and the diameter of the susceptor 9 is smaller than that of the susceptor 9. It is also possible to arrange the cylindrical heating zone 1 so that the susceptor 9 and the heating zone 1 are rotatable about the center axis of the concentric cylinder formed by them.
[0039]
In addition, the introduction part 5 of the first gas is arranged further inside the heating zone 1, and the introduction part 6 of the second gas and the introduction part 7 of the third gas are located at a location corresponding to a gap between the susceptor 9 and the heating zone 1. It is arranged at a position outside the heating area. Other configurations are the same as those in FIG.
As yet another example, the susceptor 9 has a substantially cylindrical shape, the substrate 8 is disposed on the outer wall of the susceptor 9, the heating zone 1 is disposed around the susceptor 9, and is rotatable about a cylindrical central axis. It can also be configured to do so.
[0040]
In this case, the shape of the susceptor 9 is the same as the shape generally called a barrel type. In addition, the introduction part 5 of the first gas is disposed further outside the heating zone 1, and the introduction part 6 of the second gas and the introduction part 7 of the third gas are located at a location corresponding to a gap between the susceptor 9 and the heating zone 1. It is arranged at a position outside the heating area.
FIG. 3 is a configuration diagram of a main part of a semiconductor manufacturing apparatus showing still another embodiment of the present invention.
[0041]
In this semiconductor manufacturing apparatus, a substrate 8 is disposed on a planar susceptor 9, and a heating zone 1 is disposed at a position facing the substrate 8. The shape of the surface of the heating zone 1 facing the susceptor 9 may be adjusted to the shape of the surface of the susceptor 9. The second gas inlet 6 is located on the same horizontal plane as the susceptor 9 and at a position outside the heating region. The third gas introduction part 7 is disposed at a position corresponding to a gap between the susceptor 9 and the heating zone 1 and away from the heating region.
[0042]
The shape of the surface of the susceptor 9 may be flat or curved, may be long in the left-right direction in the drawing, or may be long in the direction perpendicular to the paper surface. Other configurations are the same as those in FIG.
[0043]
【The invention's effect】
The semiconductor manufacturing apparatus of the present invention can control the spatial temperature distribution, can lower the growth temperature on the substrate, and can carry out any of the halide vapor phase growth method and the metal organic vapor phase growth method. In addition, in the vapor phase epitaxial growth of the group III nitride semiconductor, the supply ratio of the ammonia and the group 3 raw material (group 5 / group 3 ratio) can be reduced.
Further, the area of the epitaxial growth substrate can be increased also in the halide vapor phase epitaxy method.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a main part of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
FIG. 2 is a configuration diagram of a main part of a semiconductor manufacturing apparatus according to another embodiment of the present invention.
FIG. 3 is a configuration diagram of a main part of a semiconductor manufacturing apparatus showing still another embodiment of the present invention.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 heating zone 2 first gas 3 second gas 4 third gas 5 first gas introduction section 6 second gas introduction section 7 third gas introduction section 8 substrate 9 susceptor 10 cooling zone 11 refrigerant 12 thermocouple 13 process Emission window 14 for probe light of monitor 14 Reception window 15 for probe light of process monitor Heating unit 16 Cradle 17 Rotating shaft 18 Exhaust gas

Claims (12)

A semiconductor manufacturing apparatus comprising a substrate heating unit, supplying a first gas and a second gas to a substrate to grow an epitaxial layer of a compound semiconductor on the substrate, wherein a portion between the first gas inlet and the substrate is provided. And a heating zone for the first gas. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the first gas is an ammonia gas or an ammonia gas diluted with nitrogen or a nitrogen compound gas. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the second gas is a Group 3 source gas obtained from a Group 3 organometallic compound. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the second gas is a Group 3 source gas obtained from a Group 3 halogen compound. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the second gas inlet is located closer to the substrate surface than the first gas inlet. The introduction part of the first gas and the introduction part of the second gas are spatially separated, and a third gas introduction part is provided at an intermediate position between the introduction part of the first gas and the introduction part of the second gas. 6. The semiconductor manufacturing apparatus according to claim 1, wherein the introduced third gas is neither nitrogen gas nor nitrogen compound gas. The semiconductor manufacturing apparatus according to claim 1, 2, 3, 4, 5, or 6, wherein the heating zone includes a catalyst. 8. The semiconductor manufacturing apparatus according to claim 1, wherein the temperature of the heating zone is maintained higher than the temperature of the substrate. 9. The semiconductor manufacturing apparatus according to claim 1, further comprising a cooling zone between the first gas inlet and the heating zone. The substrate is disposed on a circular removable susceptor, the heating zone is disposed opposite the susceptor, and the substrate rotates and revolves with the susceptor. 10. The semiconductor manufacturing apparatus according to 5, 6, 7, 8 or 9. The semiconductor manufacturing apparatus according to claim 10, wherein a distance between the heating zone and the susceptor is equal to or less than a half of a radius of the susceptor. The susceptor is approximately cylindrical, the substrate is disposed on the inner wall of the susceptor, the heating zone is approximately cylindrical with a smaller diameter than the susceptor, and is disposed inside the susceptor, and the susceptor and the heating zone are rotatable. The semiconductor manufacturing apparatus according to claim 1, 2, 3, 4, 5, 6, 7, 8, or 9.

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